CN113178480B - Enhanced HEMT radio frequency device with gate-drain composite stepped field plate structure and preparation method thereof - Google Patents
Enhanced HEMT radio frequency device with gate-drain composite stepped field plate structure and preparation method thereof Download PDFInfo
- Publication number
- CN113178480B CN113178480B CN202110517159.0A CN202110517159A CN113178480B CN 113178480 B CN113178480 B CN 113178480B CN 202110517159 A CN202110517159 A CN 202110517159A CN 113178480 B CN113178480 B CN 113178480B
- Authority
- CN
- China
- Prior art keywords
- field plate
- sub
- grid
- drain electrode
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000002131 composite material Substances 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 230000004888 barrier function Effects 0.000 claims abstract description 46
- 238000002161 passivation Methods 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 230000005684 electric field Effects 0.000 abstract description 13
- 238000009826 distribution Methods 0.000 abstract description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 22
- 238000000034 method Methods 0.000 description 16
- 229910002704 AlGaN Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 10
- 230000005533 two-dimensional electron gas Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/404—Multiple field plate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The invention relates to an enhanced HEMT radio frequency device with a grid-drain composite stepped field plate structure and a preparation method thereof, wherein a p-type GaN region is arranged on the surface of a barrier layer, a grid is arranged on the p-type GaN region, a grid stepped field plate is further arranged on the side wall of the p-type GaN region facing to a drain electrode, a drain stepped field plate is arranged on the side wall of the drain electrode facing to the p-type GaN region, the stepped field plate comprises at least two sub-field plates, the widths of the sub-field plates are gradually reduced from top to bottom, and through the arrangement of the grid-drain composite stepped field plate, the electric field distribution of one side of the grid close to the drain electrode and one side of the drain electrode close to the grid electrode are changed, the average electric field intensity between grid drains is improved, and the voltage resistance and reliability of the device are improved; a p-GaN region is arranged below the grid electrode and combined with a grid-drain composite stepped field plate structure, so that the enhanced HEMT radio frequency device has smaller grid-drain capacitance and shows higher cut-off frequency.
Description
Technical Field
The invention relates to the field of enhanced HEMT radio frequency devices, in particular to an enhanced HEMT radio frequency device with a gate-drain composite stepped field plate structure and a preparation method thereof.
Background
GaN belongs to a wide bandgap semiconductor material, and can form a heterojunction with AlGaN due to high drift velocity of saturated electrons and high breakdown electric field intensity, and form two-dimensional electron gas with high saturation rate at the structural interface. Therefore, the GaN material device can adapt to the application in the extremely high frequency scene.
However, the enhanced HEMT devices are mostly manufactured by using a groove gate method at present, the concentration of two-dimensional electron gas in a gate region is reduced by thinning or completely removing an AlGaN layer in the gate region, and the two-dimensional electron gas in an access region is reserved. The gate AlGaN layer is completely removed, so that the threshold voltage of the device can be increased, but the device also has low electron mobility and high on-resistance. Although this problem can be alleviated by thinning, the threshold voltage is lower due to the presence of a thin layer of AlGaN and the presence of a certain concentration of two-dimensional electron gas in the gate region. On the other hand, the breakdown voltage and other properties of the current radio frequency device cannot meet the requirements of the current ultrahigh frequency field, the electric field distribution near the electrode can be changed through the arrangement of the field plate, the overall electrical properties of the device are further improved, and how to further improve the performance of the device through the arrangement of the field plate is one of the problems to be solved urgently.
Disclosure of Invention
The invention mainly aims to provide an enhanced HEMT radio frequency device with a grid-drain composite stepped field plate structure and a preparation method thereof, wherein a p-type GaN region is arranged on the surface of an AlGaN barrier layer, a grid is arranged on the p-type GaN region, a grid stepped field plate is further arranged on the side wall of the p-type GaN region facing to one side of a drain electrode, a drain stepped field plate is arranged on the side wall of the drain electrode facing to one side of the p-type GaN region, the stepped field plate comprises at least two sub-field plates, the widths of the sub-field plates are gradually reduced from top to bottom, the overall electrical property of the radio frequency device is improved by changing the electric field distribution near an electrode, the electric field distribution of the grid on one side close to the drain electrode and the electric field distribution of the drain electrode on one side close to the grid are changed, the average electric field intensity between grids is improved, and therefore the voltage resistance of the radio frequency device is stronger, and the reliability of the device is improved; on the other hand, a p-GaN region is arranged below the grid electrode, the potential well of the 2DEG at the heterojunction interface is improved by means of the built-in electric field of p-GaN/n-AlGaN, the potential well is enabled to be above the Fermi level, the 2DEG can be exhausted under zero grid voltage, and the normally-off characteristic is achieved. The enhanced HEMT radio frequency device has smaller grid-drain capacitance and higher cut-off frequency by combining the grid-drain composite stepped field plate structure, and the radio frequency device can be more suitable for various applications in the ultrahigh frequency field by the arrangement. The invention at least adopts the following technical scheme:
enhancement mode HEMT radio frequency device with grid-drain compound step field plate structure, it includes: the p-type GaN area and the grid electrode are sequentially stacked on the surface of the barrier layer between the source electrode and the drain electrode; also comprises a step of adding a new type of additive,
a gate step field plate comprising at least two gate sub field plates, located on the barrier layer surface, and arranged adjacent to the sidewall of the p-type GaN region facing the drain electrode;
a drain stepped field plate comprising at least two drain sub-field plates at a surface of the barrier layer disposed adjacent the drain towards a sidewall of the p-type GaN region;
wherein, in the direction from the source electrode to the drain electrode, the width of the sub-field plate far away from the surface side of the barrier layer is larger than that of the sub-field plate close to the surface of the barrier layer.
The grid stepped field plate comprises a first grid sub-field plate, a second grid sub-field plate and a third grid sub-field plate which are sequentially stacked, the first grid sub-field plate is positioned on the surface of the barrier layer, the third grid sub-field plate is far away from the barrier layer, and the second grid sub-field plate is positioned between the first grid sub-field plate and the third grid sub-field plate.
The total thickness of the first, second and third gate sub-field plates is equal to the thickness of the p-type GaN region.
The drain electrode stepped field plate comprises a first drain electrode sub-field plate, a second drain electrode sub-field plate and a third drain electrode sub-field plate which are sequentially stacked, the first drain electrode sub-field plate is far away from the barrier layer, the third drain electrode sub-field plate is positioned on the surface of the barrier layer, and the second drain electrode sub-field plate is positioned between the first drain electrode sub-field plate and the third drain electrode sub-field plate.
The total thickness of the first, second and third drain sub-field plates is equal to the thickness of the drain.
And passivation layers are arranged between the source electrode and the p-type GaN region and the grid electrode and between the grid electrode stepped field plate and the drain electrode stepped field plate.
The thickness of the step field plate is preferably 10nm.
Preferably, the barrier layer is Al 0.25 Ga 0.75 And the thickness of the N layer is preferably 15nm.
Preferably, the buffer layer is Al 0.11 Ga 0.89 And the thickness of the N layer is preferably 20nm.
The invention also provides a preparation method of the enhanced HEMT radio frequency device with the grid-drain composite stepped field plate structure, which comprises the following steps:
epitaxially growing a buffer layer, a channel layer and a barrier layer on a substrate in sequence;
depositing a passivation layer on the barrier layer, and etching the passivation layer to form a gate window;
epitaxially growing a p-type GaN region on the gate window;
forming a gate electrode over the p-type GaN region;
forming a source electrode and a drain electrode;
etching the passivation layer between the grid electrode and the drain electrode, and respectively forming a grid stepped field plate window adjacent to the p-type GaN region and a drain electrode stepped field plate window adjacent to the drain electrode along one side of the side wall of the p-type GaN region facing the drain electrode and one side of the side wall of the drain electrode facing the p-type GaN region;
forming a grid stepped field plate on the grid stepped field plate window, and forming a drain stepped field plate on the drain stepped field plate window;
and depositing a thickened passivation layer.
Drawings
Fig. 1 is a schematic cross-sectional structure diagram of an enhancement mode HEMT radio frequency device having a gate-drain composite stepped field plate structure according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings, and the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, other embodiments obtained by persons of ordinary skill in the art without any creative effort belong to the protection scope of the present invention. The experimental methods described in the following examples are all conventional methods unless otherwise specified; the reagents and materials, unless otherwise indicated, are commercially available from a public disclosure. The present invention will be described in further detail below.
Spatially relative terms, such as "below," "lower," "above," "over," "upper," and the like, may be used in this specification to explain the positioning of one element relative to a second element. These terms are intended to encompass different orientations of the device in addition to different orientations than those depicted in the figures. In particular, in the present specification, the thickness refers to a dimension in a direction perpendicular to the substrate unless otherwise specified; the width refers to the dimension of the source pointing to the drain or the drain pointing to the source.
In addition, terms such as "first", "second", and the like, are used to describe various elements, layers, regions, sections, and the like and are not intended to be limiting. The use of "having," "containing," "including," "comprising," and the like, are open-ended terms that specify the presence of stated elements or features, but do not exclude additional elements or features. Unless the context clearly dictates otherwise.
An embodiment of the present invention provides an enhancement HEMT radio frequency device with a gate-drain composite stepped field plate structure, as shown in fig. 1, the device includes a substrate 101, preferably a Si (111) substrate, or other suitable substrates; and a buffer layer 102, a channel layer 103, and a barrier layer 104 sequentially stacked on the substrate 101, the buffer layer 102 preferably being Al 0.11 Ga 0.89 An N layer, preferably 20nm thick; the channel layer 103 is preferably a GaN layer, preferably 15nm thick; the barrier layer 104 is preferably Al 0.25 Ga 0.75 N, preferably 15nm thick; a GaN channel layer andAl 0.25 Ga 0.85 a two-dimensional electron gas 2DEG layer is formed at the interface of the N-barrier layer, through which electrons flow to form a conductive channel.
The device further comprises a source electrode 110 and a drain electrode 111 on the barrier layer 104, a p-type GaN region 105 between the source electrode 110 and the drain electrode 111, and a gate electrode 106 on the p-type GaN region 105, a gate step field plate and a drain step field plate being arranged between the p-type GaN region 105 and the drain electrode 111, the gate step field plate and the drain step field plate being arranged on the surface of the barrier layer 111. Preferably, the width of the p-type GaN region 105 is equal to the width of the gate electrode 106.
The gate step field plate comprises at least two gate sub-field plates arranged along the sidewall of the adjoining p-type GaN region 105 towards the drain 111. Further, in the direction in which the source electrode 110 is directed to the drain electrode 111, the width of the gate sub-field plate away from the surface side of the barrier layer 104 is larger than the width of the gate sub-field plate close to the surface of the barrier layer 104. Preferably, the gate step field plate comprises a first gate sub field plate 107, a second gate sub field plate 108 and a third gate sub field plate 109 which are stacked in sequence, the first gate sub field plate 107 is located on the surface of the barrier layer 104, the third gate sub field plate 109 is far away from the barrier layer 104, and the second gate sub field plate 108 is located between the first gate sub field plate 107 and the third gate sub field plate 109. In this preferred embodiment, the total thickness of the first, second and third gate sub-field plates is equal to the thickness of the p-type GaN region.
The drain stepped field plate comprises at least two drain sub-field plates arranged along the sidewall adjacent the drain 111 towards the p-type GaN region 105. Further, the width of the drain sub-field plate away from the surface side of the barrier layer 104 is larger than the width of the drain sub-field plate close to the surface of the barrier layer 104 in the direction from the source 110 towards the drain 111. Preferably, the drain stepped field plate includes a first drain sub-field plate 112, a second drain sub-field plate 113 and a third drain sub-field plate 114 which are stacked in sequence, the first drain sub-field plate 112 is located on the surface of the barrier layer 104, the third drain sub-field plate 114 is far away from the barrier layer 104, and the second drain sub-field plate 113 is located between the first drain sub-field plate 112 and the third drain sub-field plate 114. In the preferred embodiment, the total thickness of the first, second and third drain sub-field plates is equal to the thickness of the drain electrode 111. Preferably, a total thickness of the first, second and third drain sub-field plates is equal to a total thickness of the first, second and third gate sub-field plates.
In the device, in the region between the grid electrode and the drain electrode, the drain electrode stepped field plate structure is arranged along the side wall of the drain electrode, so that the peak electric field at the edge of the drain electrode can be reduced, the electric field distribution between the grid electrode and the drain electrode is more uniform, and the breakdown voltage of the device is greatly improved. Furthermore, a grid stepped field plate structure is arranged along a side wall of a p-type GaN region below the grid, so that the grid stepped field plate structure and the drain stepped field plate structure are arranged in opposite directions, the electric field distribution between grid drains is further adjusted, the device is more suitable for working in the environment with high voltage, high frequency and high temperature, and the voltage resistance of the device is stronger. Compared with a device with a single-grid field plate structure, the device with the stepped field plate structure has higher voltage resistance; compared with the traditional HEMT without a field plate, a single-grid field plate HEMT and a stepped HEMT with a double-field plate structure, the HEMT with the grid-drain composite stepped field plate structure has smaller grid-drain capacitance and higher cut-off frequency; on the other hand, a layer of p-GaN region structure is arranged below the grid electrode, the potential well of the 2DEG at the heterojunction interface is improved by means of the built-in electric field of p-GaN/n-AlGaN, the potential well is positioned above the Fermi level, the 2DEG can be exhausted under zero grid voltage, the normally-off characteristic is realized, and the damage of a groove grid structure device to the device in the process of manufacturing is avoided.
A passivation layer 115 is also included, the passivation layer 115 being disposed between the source electrode 110 and the p-type GaN region 105 and the gate electrode 106, the gate step field plate, the drain step field plate, and the gate and drain electrodes. The passivation layer 115 is preferably a silicon nitride layer, preferably 100nm thick.
Based on the enhanced HEMT radio frequency device structure with the grid-drain composite stepped field plate structure, a preparation method of the device is further described. The method comprises the following steps:
a Si (111) substrate with a diameter of 2 inches was selected. Epitaxially growing an AlGaN buffer layer with the thickness of 20nm on a Si (111) substrate by using a Metal Organic Chemical Vapor Deposition (MOCVD) process, wherein the Al component is 0.11, and then epitaxially growing a GaN channel layer with the thickness of 15nm on the AlGaN buffer layer to form Al 0.11 Ga 0.89 And an N/GaN heterojunction epitaxial wafer.
Next, an AlGaN barrier layer, preferably of 0.25 Al composition and preferably 15nm in thickness, is selectively grown on the GaN channel layer.
Then depositing a passivation layer on the surface of the AlGaN barrier layer, wherein the passivation layer is preferably Si 3 N 4 Layer, the thickness of which is preferably 100nm.
And forming a mask layer on the surface of the passivation layer, wherein the mask layer is preferably photoresist. And forming a mask pattern in the photoresist layer through a photoetching process, and etching the passivation layer by taking the photoresist as a mask to form a gate window. And removing the photoresist layer.
And placing the epitaxial wafer in a reaction chamber, and growing a GaN layer on the gate window by using an MOCVD epitaxial process, wherein the thickness of the GaN layer is preferably 10nm. Then doping Mg or B ions by ion implantation to form p-type GaN region with doping concentration of 3 × 10 17 /cm 3 。
Next, a metal Ni/Au layer is deposited on the p-type GaN region to form a gate. Preferably an electron beam evaporation process deposits the metal layer.
And continuously forming a mask layer on the surface of the passivation layer, wherein the mask layer is preferably photoresist. And forming a mask pattern in the photoresist layer by a photoetching process, and etching the passivation layer by taking the photoresist as a mask to form source and drain windows. And depositing a Ti/Al/Ni/Au composite metal layer by using an electron beam evaporation process to form a source/drain contact electrode.
And spin-coating a photoresist mask layer to form a photoresist pattern, etching a passivation layer between the grid electrode and the drain electrode by taking the photoresist as a mask, etching downwards for a certain width along the side wall of the grid electrode and the p-type GaN region towards the drain electrode to form a first grid sub-field plate window, depositing a Ti/Ni/Au metal layer, removing the photoresist layer to form a first grid sub-field plate, and communicating the first grid sub-field plate with the p-type GaN region.
And continuously spin-coating a photoresist mask layer to form a photoresist pattern, etching a passivation layer between the grid electrode and the drain electrode by taking the photoresist as a mask, etching downwards along the side wall of the grid electrode and the p-type GaN region towards the drain electrode by a certain width to form a second grid sub-field plate window, depositing a Ti/Ni/Au metal layer, removing the photoresist layer to form a second grid sub-field plate, and communicating the second grid sub-field plate with the p-type GaN region.
Similarly, a third gate sub-field plate window is formed by etching by the same process, the width of the third gate sub-field plate window is larger than that of the second gate sub-field plate window, a Ti/Ni/Au metal layer is deposited, the photoresist layer is removed, and a third gate sub-field plate is formed and is communicated with the p-type GaN region.
And spin-coating a photoresist mask layer to form a photoresist pattern, etching a passivation layer between the grid electrode and the drain electrode by taking the photoresist as a mask, etching downwards for a certain width along the side wall of the drain electrode facing the grid electrode to form a first drain sub-field plate window, depositing a Ti/Ni/Au metal layer, removing the photoresist layer, and forming a first drain sub-field plate.
Similarly, the same process is selected for etching to form a second drain sub-field plate window, the width of the second drain sub-field plate window is larger than that of the first drain sub-field plate window, a Ti/Ni/Au metal layer is deposited, and the photoresist layer is removed to form a second gate sub-field plate.
And continuously adopting the same process to form a third drain sub-field plate window, wherein the width of the third drain sub-field plate window is larger than that of the second drain sub-field plate window, depositing a Ti/Ni/Au metal layer, and removing the photoresist layer to form the third drain sub-field plate.
It is understood that, in other embodiments, the gate step field plate and the drain step field plate may be prepared in the same process, or the drain step field plate may be prepared first and then the gate step field plate may be prepared, and the order of preparing the gate step field plate and the drain step field plate is not particularly limited in the present invention.
Finally, a layer of Si with the thickness of 100nm is deposited on the whole device by adopting the PECVD process 3 N 4 And (5) passivating a layer, and cleaning to finish the manufacture of the device.
The preparation method disclosed by the invention is simple in process and strong in flexibility, and can be adjusted adaptively according to the requirements of the actual process.
The above embodiments are preferred embodiments of the present invention, but the present invention is not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be construed as equivalents thereof, and all such changes, modifications, substitutions, combinations, and simplifications are intended to be included in the scope of the present invention.
Claims (9)
1. Enhancement mode HEMT radio frequency device with gate-drain compound step field plate structure, it includes: the p-type GaN area and the grid electrode are sequentially stacked on the surface of the barrier layer between the source electrode and the drain electrode; it is characterized by also comprising the following steps of,
the grid stepped field plate is positioned on the surface of the barrier layer and is arranged adjacent to the side wall, facing the drain electrode, of the p-type GaN region, the grid stepped field plate comprises a first grid sub-field plate, a second grid sub-field plate and a third grid sub-field plate which are sequentially stacked, the first grid sub-field plate is positioned on the surface of the barrier layer, the third grid sub-field plate is far away from the barrier layer, and the second grid sub-field plate is positioned between the first grid sub-field plate and the third grid sub-field plate;
the drain electrode stepped field plate is positioned on the surface of the barrier layer and is arranged adjacent to the side wall of the drain electrode facing the p-type GaN region, the drain electrode stepped field plate comprises a first drain electrode sub-field plate, a second drain electrode sub-field plate and a third drain electrode sub-field plate which are sequentially stacked, the first drain electrode sub-field plate is far away from the barrier layer, the third drain electrode sub-field plate is positioned on the surface of the barrier layer, and the second drain electrode sub-field plate is positioned between the first drain electrode sub-field plate and the third drain electrode sub-field plate;
wherein, in a direction from a source electrode to a drain electrode, a width of the sub-field plate far from the barrier layer surface side is larger than a width of the sub-field plate near the barrier layer surface.
2. An enhancement mode HEMT radio frequency device according to claim 1, wherein the total thickness of said first, second and third gate sub-field plates is equal to the thickness of said p-type GaN region.
3. An enhancement mode HEMT radio frequency device according to claim 1, wherein the total thickness of said first, second and third drain sub-field plates is equal to the thickness of said drain electrode.
4. An enhancement mode HEMT radio frequency device according to any one of claims 1 to 3, wherein a passivation layer is disposed between said source electrode and said p-type GaN region and gate, and between said gate step field plate and said drain step field plate.
5. The enhancement-mode HEMT radio frequency device of claim 4, wherein said passivation layer is a silicon nitride layer with a thickness of 100nm.
6. The enhancement mode HEMT radio frequency device of claim 4, wherein said gate step field plate has a thickness of 10nm.
7. The enhancement mode HEMT radio frequency device of claim 4, wherein the barrier layer is Al 0.25 Ga 0.75 And the thickness of the N layer is 15nm.
8. The enhancement mode HEMT radio frequency device of claim 4, wherein the buffer layer is Al 0.11 Ga 0.89 And the thickness of the N layer is 20nm.
9. The preparation method of the enhanced HEMT radio frequency device with the grid-drain composite stepped field plate structure is characterized by comprising the following steps of:
epitaxially growing a buffer layer, a channel layer and a barrier layer on a substrate in sequence;
depositing a passivation layer on the barrier layer, and etching the passivation layer to form a gate window;
epitaxially growing a p-type GaN region on the gate window;
forming a gate electrode over the p-type GaN region;
forming a source electrode and a drain electrode;
etching the passivation layer between the grid electrode and the drain electrode, and respectively forming a grid stepped field plate window adjacent to the p-type GaN region and a drain electrode stepped field plate window adjacent to the drain electrode along one side of the side wall of the p-type GaN region facing the drain electrode and one side of the side wall of the drain electrode facing the p-type GaN region;
forming a grid stepped field plate on the grid stepped field plate window, forming a drain stepped field plate on the drain stepped field plate window, wherein the grid stepped field plate comprises a first grid sub-field plate, a second grid sub-field plate and a third grid sub-field plate which are sequentially stacked, the first grid sub-field plate is positioned on the surface of the barrier layer, the third grid sub-field plate is far away from the barrier layer, and the second grid sub-field plate is positioned between the first grid sub-field plate and the third grid sub-field plate; the drain electrode stepped field plate comprises a first drain electrode sub-field plate, a second drain electrode sub-field plate and a third drain electrode sub-field plate which are sequentially stacked, the first drain electrode sub-field plate is far away from the barrier layer, the third drain electrode sub-field plate is positioned on the surface of the barrier layer, and the second drain electrode sub-field plate is positioned between the first drain electrode sub-field plate and the third drain electrode sub-field plate; in the direction from the source electrode to the drain electrode, the width of the sub field plate far away from the surface side of the barrier layer is larger than that of the sub field plate close to the surface of the barrier layer;
and depositing a thickened passivation layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110517159.0A CN113178480B (en) | 2021-05-12 | 2021-05-12 | Enhanced HEMT radio frequency device with gate-drain composite stepped field plate structure and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110517159.0A CN113178480B (en) | 2021-05-12 | 2021-05-12 | Enhanced HEMT radio frequency device with gate-drain composite stepped field plate structure and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113178480A CN113178480A (en) | 2021-07-27 |
| CN113178480B true CN113178480B (en) | 2022-10-18 |
Family
ID=76929238
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110517159.0A Active CN113178480B (en) | 2021-05-12 | 2021-05-12 | Enhanced HEMT radio frequency device with gate-drain composite stepped field plate structure and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113178480B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113594235A (en) * | 2021-07-28 | 2021-11-02 | 西安电子科技大学 | Enhanced gallium nitride high electron mobility transistor capable of resisting single particle burnout |
| CN113644129B (en) * | 2021-08-12 | 2023-04-25 | 电子科技大学 | Reverse resistance type HEMT with step type P type GaN drain electrode structure |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070164326A1 (en) * | 2004-02-20 | 2007-07-19 | Yasuhiro Okamoto | Field effect transistor |
| JP2013074070A (en) * | 2011-09-27 | 2013-04-22 | Fujitsu Ltd | Semiconductor device and manufacturing method of semiconductor device |
| US10062756B2 (en) * | 2014-10-30 | 2018-08-28 | Semiconductor Components Industries, Llc | Semiconductor structure including a doped buffer layer and a channel layer and a process of forming the same |
| CN107431021B (en) * | 2015-03-31 | 2020-09-22 | 夏普株式会社 | Nitride semiconductor field effect transistor |
| CN105448964A (en) * | 2015-11-23 | 2016-03-30 | 西安电子科技大学 | Composite stepped field plate trench gate AlGaN/GaN HEMT high-voltage device structure and manufacturing method therefor |
| CN105448975A (en) * | 2015-12-03 | 2016-03-30 | 西安电子科技大学 | Composite step field plate grooved-gate high electron mobility transistor (HEMT) high-voltage device and fabrication method thereof |
| CN106783960A (en) * | 2017-01-11 | 2017-05-31 | 西安电子科技大学 | A kind of ladder p GaN enhanced AlGaNs/GaN HFETs |
| CN106783962A (en) * | 2017-01-11 | 2017-05-31 | 西安电子科技大学 | A kind of p GaN enhanced AlGaNs/GaN HEMTs |
| US11127847B2 (en) * | 2019-05-16 | 2021-09-21 | Vanguard International Semiconductor Corporation | Semiconductor devices having a gate field plate including an extension portion and methods for fabricating the semiconductor device |
| CN112670341B (en) * | 2020-12-23 | 2023-08-15 | 广东省科学院半导体研究所 | Enhanced power semiconductor device structure and preparation method thereof |
-
2021
- 2021-05-12 CN CN202110517159.0A patent/CN113178480B/en active Active
Non-Patent Citations (1)
| Title |
|---|
| Enhanced performance of GaN-based light-emitting diodes with InGaN/GaN superlattice barriers;蔡金鑫;《Chinese Physics B》;20140515;第23卷(第5期);第1-4页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113178480A (en) | 2021-07-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6999197B2 (en) | Group III nitride enhancement type HEMT based on the composite barrier layer structure and its manufacturing method | |
| CN103178107B (en) | There is the high electron mobility transistor structure of the breakdown voltage property of improvement | |
| CN102130158B (en) | Step-like groove-grid high electron mobility transistor | |
| CN113169228A (en) | Lateral III-nitride devices including vertical gate modules | |
| CN109004017B (en) | HEMT device with polarization junction longitudinal leakage current barrier layer structure and preparation method thereof | |
| CN102097483B (en) | GaN-base heterostructure enhancement type insulated gate field effect transistor and preparation method thereof | |
| CN102629624A (en) | Metal-insulator-semiconductor (MIS) grid enhanced high electron mobility transistor (HEMT) device based on gallium nitride (GaN) and manufacture method of MIS grid enhanced HEMT device | |
| CN111524972B (en) | Transistor and preparation method thereof | |
| CN112635545B (en) | Enhanced GaN-based MIS-HEMT with asymmetric gate dielectric layer and preparation method thereof | |
| CN113178480B (en) | Enhanced HEMT radio frequency device with gate-drain composite stepped field plate structure and preparation method thereof | |
| US20200273974A1 (en) | Iii-n transistor structures with stepped cap layers | |
| CN113113469A (en) | High-voltage-resistance double-gate transverse HEMT device and preparation method thereof | |
| CN106298887A (en) | A kind of preparation method of high threshold voltage high mobility notched gates MOSFET | |
| CN105810728A (en) | Enhanced fin-type insulated gate high-electronic mobility transistor | |
| CN116169169A (en) | Enhanced GaN HEMTs with low gate leakage current and preparation method thereof | |
| CN111509042A (en) | MIS structure GaN high electron mobility transistor and preparation method thereof | |
| CN117253917A (en) | GaN MIS HEMT shielded by surface trap and preparation method thereof | |
| CN102646705A (en) | Metal insulated semi-conductor (MIS) grid GaN base enhancing high electro mobility transistor (HEMT) device and manufacture method | |
| CN111477678B (en) | Transverse Schottky diode based on interdigital structure and preparation method thereof | |
| CN116741635A (en) | HEMT device manufacturing method based on maskless regrowth low-resistance extension layer | |
| CN110890423A (en) | High-voltage gallium nitride power device structure and preparation method thereof | |
| CN113410297B (en) | MIS split gate GaN-based high electron mobility transistor and preparation method thereof | |
| CN113257896B (en) | Multi-field-plate radio frequency HEMT device and preparation method thereof | |
| CN102315261B (en) | Semiconductor device and making method thereof | |
| CN114883407A (en) | HEMT based on Fin-FET gate structure and manufacturing method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |