CN113174588A - Atomic layer deposition system and deposition method - Google Patents
Atomic layer deposition system and deposition method Download PDFInfo
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- CN113174588A CN113174588A CN202110455179.XA CN202110455179A CN113174588A CN 113174588 A CN113174588 A CN 113174588A CN 202110455179 A CN202110455179 A CN 202110455179A CN 113174588 A CN113174588 A CN 113174588A
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- 238000000231 atomic layer deposition Methods 0.000 title claims abstract description 45
- 238000000151 deposition Methods 0.000 title abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 55
- 238000000034 method Methods 0.000 claims abstract description 46
- 238000006243 chemical reaction Methods 0.000 claims abstract description 42
- 230000008569 process Effects 0.000 claims abstract description 35
- 230000007246 mechanism Effects 0.000 claims abstract description 21
- 230000005540 biological transmission Effects 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 23
- 239000002243 precursor Substances 0.000 claims description 8
- 239000000376 reactant Substances 0.000 claims description 8
- 239000011261 inert gas Substances 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 6
- 238000005137 deposition process Methods 0.000 claims description 5
- 239000006185 dispersion Substances 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 5
- 125000002524 organometallic group Chemical group 0.000 claims description 5
- 230000009471 action Effects 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000036316 preload Effects 0.000 claims description 3
- 230000008021 deposition Effects 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000010923 batch production Methods 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000012713 reactive precursor Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45546—Atomic layer deposition [ALD] characterized by the apparatus specially adapted for a substrate stack in the ALD reactor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
- C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to an atomic layer deposition system and a deposition method, wherein the atomic layer deposition system comprises: buffer chamber, pre-loading chamber, reaction chamber. The buffer chamber is connected with a vacuum balance cavity of the previous process equipment, and a loading arm is arranged in the buffer chamber to realize the transfer of the substrate to be deposited to the subsequent process equipment; the pre-loading cavity is connected with the buffer cavity in a linear mode, a rotary clamp is arranged in the pre-loading cavity to receive and fix the substrate to be deposited, which is delivered by the loading arm, and a power mechanism is arranged in the rotary clamp to realize the transmission of the rotary clamp carrying the substrate to be deposited to subsequent process equipment; the reaction chamber is positioned below the pre-loading chamber, and a vacuum reactor is arranged in the reaction chamber. The beneficial effects are that: by the mass atomic layer deposition process, the production efficiency of the atomic layer deposition system is greatly improved, and the method is suitable for the mass process and is used for film deposition protection of the substrate.
Description
Technical Field
The invention relates to the technical field of deposition processes, in particular to an atomic layer deposition system and a deposition method.
Background
Atomic layer deposition (Atomic layer deposition) is a process by which a substance can be deposited on a substrate surface layer by layer as a monoatomic film. Atomic layer deposition is similar to ordinary chemical deposition. However, in an atomic layer deposition process, the chemical reaction of a new atomic film is directly related to the previous one in such a way that only one layer of atoms is deposited per reaction. In an ALD process, different reactive precursors are alternately fed into the chamber in the form of gas pulses, and thus not a continuous process. ALD has significant advantages over conventional deposition processes in terms of film uniformity, step coverage, and thickness control. But the process involves complicated surface chemistry and low deposition rates and also has disadvantages for use in production.
Therefore, the invention provides a novel atomic layer deposition system and a deposition method.
Disclosure of Invention
The invention provides an atomic layer deposition system and a deposition method, which aim to solve the problems of complex process and low deposition efficiency in the prior art.
The technical problem solved by the invention is realized by adopting the following technical scheme:
an atomic layer deposition system, comprising:
the buffer chamber is connected with the vacuum balance cavity of the previous process equipment, and a loading arm is arranged in the buffer chamber to realize the transfer of the substrate to be deposited to the subsequent process equipment;
the pre-loading cavity is connected with the buffer cavity in a linear mode, a rotary clamp is arranged in the pre-loading cavity to receive and fix the substrate to be deposited, which is delivered by the loading arm, and a power mechanism is arranged in the rotary clamp to realize the transmission of the rotary clamp carrying the substrate to be deposited to subsequent process equipment;
and the reaction chamber is positioned below the pre-loading cavity, and a vacuum reactor is arranged in the reaction chamber to seal the substrate and maintain a vacuum state until the atomic layer deposition process is completed.
In some embodiments, a gate valve is disposed between the buffer chamber and the pre-load chamber.
In some embodiments, the rotary jig comprises:
a housing having at least one opening
The limiting device is arranged in the shell to fix the substrate;
a rotation mechanism disposed outside the housing to rotate an opening direction of the housing;
and the driving mechanism is used for driving the rotating mechanism to rotate, and the shell moves towards the reaction chamber.
In some embodiments, a cover plate is further arranged on the rotary fixture, and the cover plate and the vacuum reactor form a sealed reaction space under the action of the driving mechanism.
In some embodiments, a pipeline for reaction materials to enter is arranged in the vacuum reactor, and a flow divider is arranged on the cover plate and communicated with the pipeline to realize dispersion distribution of the reaction materials.
In some embodiments, the conduit is multiple to achieve alternating access of different reactive materials.
In some embodiments, the reactive material includes a precursor (organometallic source), a non-reactive inert gas (N2), a reactant (H2O), and the like.
In some embodiments, the outside of the vacuum reactor is provided with a heating module.
In some embodiments, the limiting device is a plurality of limiting devices, and the limiting devices are distributed in the shell at equal intervals.
The invention also provides an atomic layer deposition method, which comprises the following steps:
s1, placing the substrate to be deposited in a buffer chamber, and applying vacuum atmosphere;
s2, transferring the substrate into a pre-loading cavity and fixing the substrate on a rotary clamp;
s3, adjusting the posture of the rotary clamp and transmitting the posture to a vacuum reactor;
s4 maintaining the vacuum atmosphere in the vacuum reactor, intermittently charging the reaction material until the deposition process is completed.
In some embodiments, the vacuum level of the buffer chamber of step S1 is 10-6And the vacuum atmosphere of the buffer chamber is more than or equal to 1 μm, and the number of particles is less than 3/time.
In some embodiments, the adjusting the posture of the rotating jig in step S3 includes rotating the rotating jig by 90 ° from a horizontal position to a vertical position so that the substrate is adjusted from a horizontal posture to a vertical posture.
In some embodiments, the reactive material of step S4 is dispersed and distributed within the vacuum reactor after passing through a separator.
The invention has the beneficial effects that: according to the invention, the atomic layer deposition process is carried out in batch, so that the production efficiency of the atomic layer deposition system is greatly improved, and the method is suitable for the batch process and is used for carrying out film deposition protection on the substrate.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without inventive exercise.
FIG. 1 is a drawing of the present invention: one of the schematic structural diagrams of an atomic layer deposition system;
FIG. 2 is a drawing of the present invention: a second schematic structural diagram of an atomic layer deposition system;
FIG. 3 is a drawing of the present invention: a schematic structural diagram of a rotary fixture of an atomic layer deposition system;
FIG. 4 is a drawing of the present invention: a flow diagram of a method of atomic layer deposition.
Wherein:
10-front-end process equipment, 99-substrate to be deposited, 100-buffer chamber, 200-pre-loading chamber, 300-reaction chamber, 400-vacuum pump, 110-loading arm, 120-gate valve, 210-rotary clamp, 211-shell, 212-limiting device, 213-rotary mechanism, 214-cover plate, 220-power mechanism, 310-vacuum reactor, 311-pipeline and 312-splitter.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further explained below by combining the specific drawings.
Example 1
Referring to fig. 1-3, an atomic layer deposition system includes: buffer chamber 100, pre-load chamber 200, reaction chamber 300. The buffer chamber 100 is connected to a vacuum balance chamber of the previous process equipment 10, and a loading arm 110 is disposed in the buffer chamber 100 to transfer the substrate 99 to be deposited to the subsequent process equipment; the pre-loading chamber 200 is connected with the buffer chamber 100 in a straight line shape, a rotary clamp 210 is arranged in the pre-loading chamber 200 to receive and fix the substrate 99 to be deposited delivered by the loading arm 110, and a power mechanism 220 is arranged in the rotary clamp 210 to realize the transmission of the rotary clamp 210 carrying the substrate 99 to be deposited to subsequent process equipment; the reaction chamber 300 is located below the pre-loading chamber 200, and a vacuum reactor 310 is disposed in the reaction chamber 300 to seal the substrate 99 to be deposited and maintain a vacuum state until the atomic layer deposition process is completed.
The gate valve 120 is arranged between the buffer chamber 100 and the pre-loading chamber 200 in the present invention, so as to maintain the vacuum atmosphere of the pre-loading chamber 200, and simultaneously maintain the atmosphere balance between the buffer chamber 100 and the pre-loading chamber 200, generally, due to the difference of the process, the atmosphere is different, and the buffer chamber 100 is evacuated to 10 degrees by a multi-stage vacuum pump (not shown)-6torr, the number of particles greater than or equal to 1 μm is less than 3/time in the buffer chamber 100, and then the substrate 99 to be deposited is protectively transferred.
The rotary jig 210 in the present invention includes: the substrate fixing device comprises a shell 211, a limiting device 212 and a rotating mechanism 213, wherein the shell 211 is provided with at least one opening, and the limiting device 212 is arranged in the shell 211 to fix a substrate; the rotation mechanism 213 is disposed outside the housing 211 to rotate the opening direction of the housing 211; the power mechanism 220 drives the rotation mechanism 213 to rotate, and the housing 211 moves into the reaction chamber 300. Wherein, the number of the position-limiting devices 212 is plural, and the position-limiting devices 212 are distributed in the housing 211 at equal intervals, for example, the number of the position-limiting devices 212 is 1-25, the larger the number of the position-limiting devices 212 is, the more substrates can be deposited at the same time.
In the present invention, the rotating fixture 210 is further provided with a cover plate 214, and the cover plate 214 and the vacuum reactor 310 form a sealed reaction space under the action of the power mechanism 220. Further, a pipeline 311 for reaction materials to enter is arranged in the vacuum reactor 310, a flow divider 312 is arranged on the cover plate 214, and the flow divider 312 is communicated with the pipeline 311, so that the dispersion distribution of the reaction materials is realized. The number of the pipelines 311 is plural, so as to realize the alternate entry of different reaction materials. The reactive materials in the present invention include precursors (organometallic sources), non-reactive inert gases (N2), reactants (H2O), and the like. In order to improve the reaction efficiency, a heating module (not shown) is provided outside the vacuum reactor 310 to maintain the temperature in the vacuum reactor 310 at an appropriate range of 100 to 150 ℃.
Specifically, when a coating is required, the substrate 99 to be deposited may be glass, a silicon wafer or any other substrate having a sheet structure. In the present embodiment, the substrate 99 to be deposited is a silicon substrate on which a patterning structure has been completed by a previous stage process. The substrate 99 to be deposited is transferred into the buffer chamber 100 by the loading arm 110, the buffer chamber 100 is subjected to a vacuum atmosphere, which is generally different depending on the process, and the buffer chamber 100 is evacuated to 10 deg.f by a multi-stage vacuum pump (not shown)-6torr, the number of particles greater than or equal to 1 μm is less than 3/time in the buffer chamber 100, and then the substrate 99 to be deposited is protectively transferred. After the vacuum degree of the buffer chamber 100 is balanced with the pressure of the previous process equipment 10, the gate valve 120 between the loading arm 110 and the lower pre-loading chamber 200 is opened, at this time, the loading arm 110 and the substrate 99 to be deposited thereon enter the pre-loading chamber 200 together, the substrate 99 to be deposited is placed on the rotating fixture 210 in the horizontal position, the loading arm 110 exits the pre-loading chamber 200, and the gate valve 120 is closed. The above process is repeated a plurality of times, and a plurality of substrates to be deposited 99 are placed on the rotating jig 210.
Since the rotating jig 210 has a plurality of spaced stoppers 212, the substrate 99 to be deposited does not undergo positional shift while being rotationally moved. The rotary jig 210 may be programmed to control the rotational speed and angle of the rotary mechanism 213. In this example, the rotation angle of the rotating jig 210 is fixed, being rotated by 90 ° from the horizontal position to the vertical position.
At this time, the power mechanism 220 controls the inner rotating fixture 210 to descend at a constant speed into the vacuum reactor 310 of the reaction chamber 300, the cover plate 214 and the vacuum reactor 310 form a sealed reaction space, and the housing 211 containing the substrate 99 to be deposited is placed in the reaction space. A pipeline 311 for reaction materials to enter is arranged in the vacuum reactor 310, a flow divider 312 is arranged on the cover plate 214, and the flow divider 312 is communicated with the pipeline 311 to realize the dispersion distribution of the reaction materials. The plurality of pipelines 311 are used for realizing the alternate entry of different reaction materials, and the self-limiting adsorption reaction and the deposition reaction on the substrate are fully performed through the dispersion distribution of the splitter 312, so that the uniformity and the consistency of the atomic layer deposition reaction film forming are improved. The reactive materials in the present invention include precursors (organometallic sources), non-reactive inert gases (N2), reactants (H2O), and the like.
The reaction chamber of the present invention maintains a vacuum atmosphere under the action of the vacuum pump 400, and simultaneously performs an atomic layer deposition process in the vacuum reactor 310, and a heating module is disposed outside the vacuum reactor 310 to maintain the temperature of the vacuum reactor 310 at 100-150 ℃. During the reaction, the reactant materials such as precursors (organometallic sources), non-reactive inert gases (N2), and reactants (H2O) are alternately pulsed in through line 311. The precursor (organic metal source) is chemically and automatically adsorbed on the substrate, the non-reactive inert gas (N2) blows away excessive unadsorbed precursor (organic metal source) and reactant (H2O), and the reactant (H2O) reacts with the precursor (organic metal source) adsorbed on the silicon substrate to produce a dense and uniform protective film layer without pinholes, so that a patterned structure on the silicon substrate is protected from being corroded by water vapor and oxygen.
The structure of the high-efficiency conveying system and the atomic layer deposition system avoids the process of multiple vacuum pressure difference balance in the transfer process of the single-chip secondary cavity. The multi-chip substrate is transferred after the front-stage process equipment and the system equipment are in vacuum balance, then the atomic layer deposition process is carried out in batches, the production efficiency of the atomic layer deposition system is greatly improved, the method is suitable for the batch process, and film deposition protection is carried out on the substrate.
Example 2
Referring to fig. 4, the present invention further provides an atomic layer deposition method, including:
s1, placing the substrate to be deposited in a buffer chamber, and applying vacuum atmosphere;
s2, transferring the substrate into a pre-loading cavity and fixing the substrate on a rotary clamp;
s3, adjusting the posture of the rotary clamp and transmitting the posture to a vacuum reactor;
s4 maintaining the vacuum atmosphere in the vacuum reactor, intermittently charging the reaction material until the deposition process is completed.
The vacuum degree of the buffer chamber of step S1 in the present invention is 10-6And the vacuum atmosphere of the buffer chamber is more than or equal to 1 μm, and the number of particles is less than 3/time.
Adjusting the posture of the rotating jig in step S3 in the present invention includes rotating the rotating jig by 90 ° from the horizontal position to the vertical position so that the substrate is adjusted from the horizontal posture to the vertical posture.
In the present invention, the reaction material described in step S4 is dispersed and distributed in the vacuum reactor after passing through the separator.
According to the invention, the atomic layer deposition process is carried out in batch, so that the production efficiency of the atomic layer deposition system is greatly improved, and the method is suitable for the batch process and is used for carrying out film deposition protection on the substrate.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (13)
1. An atomic layer deposition system, comprising:
the buffer chamber is connected with the vacuum balance cavity of the previous process equipment, and a loading arm is arranged in the buffer chamber to realize the transfer of the substrate to be deposited to the subsequent process equipment;
the pre-loading cavity is connected with the buffer cavity in a linear mode, a rotary clamp is arranged in the pre-loading cavity to receive and fix the substrate to be deposited, which is delivered by the loading arm, and a power mechanism is arranged in the rotary clamp to realize the transmission of the rotary clamp carrying the substrate to be deposited to subsequent process equipment;
and the reaction chamber is positioned below the pre-loading cavity, and a vacuum reactor is arranged in the reaction chamber to seal the substrate and maintain a vacuum state until the atomic layer deposition process is completed.
2. The atomic layer deposition system of claim 1, wherein a gate valve is disposed between the buffer chamber and the pre-load chamber.
3. The atomic layer deposition system of claim 1, wherein the rotating chuck comprises:
a housing having at least one opening
The limiting device is arranged in the shell to fix the substrate;
a rotation mechanism disposed outside the housing to rotate an opening direction of the housing;
and the driving mechanism is used for driving the rotating mechanism to rotate, and the shell moves towards the reaction chamber.
4. The atomic layer deposition system according to claim 3, wherein a cover plate is further disposed on the rotary fixture, and the cover plate and the vacuum reactor form a sealed reaction space under the action of the driving mechanism.
5. The atomic layer deposition system according to claim 4, wherein a pipeline for the reaction material to enter is disposed in the vacuum reactor, and a splitter is disposed on the cover plate and is communicated with the pipeline to achieve dispersion distribution of the reaction material.
6. An atomic layer deposition system according to claim 5, wherein the plurality of conduits is configured to provide alternating access of different reactive materials.
7. An atomic layer deposition system according to claim 5, wherein the reactive material comprises a precursor (organometallic source), a non-reactive inert gas (N2), a reactant (H2O).
8. The atomic layer deposition system according to claim 1, wherein the vacuum reactor is provided with a heating module on the outside.
9. The atomic layer deposition system according to claim 1, wherein the plurality of position-limiting devices are equally spaced within the housing.
10. A method of atomic layer deposition comprising:
s1, placing the substrate to be deposited in a buffer chamber, and applying vacuum atmosphere;
s2, transferring the substrate into a pre-loading cavity and fixing the substrate on a rotary clamp;
s3, adjusting the posture of the rotary clamp and transmitting the posture to a vacuum reactor;
s4 maintaining the vacuum atmosphere in the vacuum reactor, intermittently charging the reaction material until the deposition process is completed.
11. The method of claim 10, wherein the buffer chamber has a vacuum degree of 10 in step S1-6torr, vacuum atmosphere of the buffer chamberThe number of particles is not less than 1 μm and less than 3 particles per time.
12. The method according to claim 10, wherein the adjusting the position of the rotating jig in step S3 comprises rotating the rotating jig 90 ° from a horizontal position to a vertical position, so that the substrate is adjusted from a horizontal position to a vertical position.
13. The method of claim 10, wherein the reactive material of step S4 is dispersed and distributed in the vacuum reactor after passing through a separator.
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| CN202110455179.XA CN113174588A (en) | 2021-04-26 | 2021-04-26 | Atomic layer deposition system and deposition method |
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| CN202110455179.XA CN113174588A (en) | 2021-04-26 | 2021-04-26 | Atomic layer deposition system and deposition method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117604505A (en) * | 2024-01-24 | 2024-02-27 | 江苏迈纳德微纳技术有限公司 | Atomic layer deposition equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104812938A (en) * | 2012-11-23 | 2015-07-29 | 皮考逊公司 | Substrate loading in Atomic Layer Deposition (ALD) reactor |
| CN105900215A (en) * | 2013-11-15 | 2016-08-24 | 科恩艾斯恩株式会社 | Atomic layer deposition apparatus and method |
| CN109689930A (en) * | 2016-09-16 | 2019-04-26 | 皮考逊公司 | Device and method for atomic layer deposition |
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- 2021-04-26 CN CN202110455179.XA patent/CN113174588A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104812938A (en) * | 2012-11-23 | 2015-07-29 | 皮考逊公司 | Substrate loading in Atomic Layer Deposition (ALD) reactor |
| CN105900215A (en) * | 2013-11-15 | 2016-08-24 | 科恩艾斯恩株式会社 | Atomic layer deposition apparatus and method |
| CN109689930A (en) * | 2016-09-16 | 2019-04-26 | 皮考逊公司 | Device and method for atomic layer deposition |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117604505A (en) * | 2024-01-24 | 2024-02-27 | 江苏迈纳德微纳技术有限公司 | Atomic layer deposition equipment |
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