CN113130287A - Etching machine structure of coil current distribution type - Google Patents
Etching machine structure of coil current distribution type Download PDFInfo
- Publication number
- CN113130287A CN113130287A CN202010028214.5A CN202010028214A CN113130287A CN 113130287 A CN113130287 A CN 113130287A CN 202010028214 A CN202010028214 A CN 202010028214A CN 113130287 A CN113130287 A CN 113130287A
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- Prior art keywords
- reaction chamber
- coils
- plasma
- capacitor
- coil
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- 238000005530 etching Methods 0.000 title abstract description 14
- 238000006243 chemical reaction Methods 0.000 claims abstract description 72
- 239000003990 capacitor Substances 0.000 claims abstract description 29
- 238000004891 communication Methods 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 abstract description 17
- 239000013049 sediment Substances 0.000 abstract 1
- 238000004088 simulation Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000036470 plasma concentration Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
The invention discloses a coil current distribution type etching machine structure, which comprises: a first plasma reaction chamber having a first reaction chamber; a plurality of first C-shaped coils arranged at the periphery of the first reaction chamber in an upper and lower direction, each first C-shaped coil having a first input end and a first ground end; and the first power supply module is electrically connected with the first input end in a one-to-one mode through a plurality of first variable capacitors. By means of the implementation of the invention, different cleaning energies can be dynamically provided so as to adapt to the cleaning of the sediments with different thicknesses at different parts in the reaction chamber.
Description
Technical Field
The invention relates to an etching machine structure, in particular to a coil current distribution type etching machine structure.
Background
The position and length of the coil is important for Inductively Coupled Plasma (ICP). Once the length and position of the coil are fixed, they will not change, so the uniformity of plasma concentration, electron temperature distribution, and the position and degree of local damage in the reaction chamber will be fixed.
As shown in fig. 1, after the etcher is used for a period of time, polymer deposition (shown as dark region P101) occurs on the walls of the chamber after the plasma reaction, and the polymer deposition causes distortion of the process parameters in the chamber, and the level of impurity particles in the chamber increases as the thickness of the polymer deposition increases, thereby causing a problem of serious yield loss.
In the conventional inductively coupled plasma etcher, especially when dry clean (dry clean) is used, since the thickness of the polymer deposition is different at each portion, how to design a mechanism for providing different cleaning energies for different portions so as to effectively remove the polymer (the light color region P102 in the figure) has become an important issue in the development of the device.
Disclosure of Invention
The invention relates to a coil current distribution type etching machine structure, which mainly aims to solve the problem that how to enable a coil to provide different magnetic fields according to conditions so as to dynamically generate different plasma densities at different parts to provide different cleaning energies.
The invention provides a coil current distribution type etching machine structure, which comprises: a first plasma reaction chamber having a first reaction chamber; a plurality of first C-shaped coils arranged at the periphery of the first reaction chamber in an upper and lower direction, each first C-shaped coil having a first input end and a first ground end; and the first power supply module is electrically connected with the first input end in a one-to-one mode through a plurality of first variable capacitors.
In an embodiment of the invention, the plurality of first C-shaped coils are arranged parallel to each other.
In an embodiment of the invention, the plurality of first C-shaped coils are arranged at equal intervals.
In an embodiment of the invention, an anti-glitch capacitor is disposed between the first power module and the ground terminal.
In an embodiment of the invention, a plurality of the grounding end portions are electrically connected to a grounding end after being connected in series with a capacitor.
In an embodiment of the present invention, the coil current distribution type etching machine further includes:
a second plasma reaction chamber having a second reaction chamber in communication with the first reaction chamber;
a plurality of second C-shaped coils arranged at the periphery of the second reaction chamber in an upper and lower direction, each second C-shaped coil having a second input end and a second ground end; and
the second power supply module is electrically connected with the second input end in a one-to-one mode through a plurality of second variable capacitors.
In an embodiment of the invention, the plurality of second C-shaped coils are arranged parallel to each other.
In an embodiment of the present invention, the plurality of second C-shaped coils are arranged at equal intervals.
In an embodiment of the invention, an anti-glitch capacitor is disposed between the second power module and the ground terminal.
In an embodiment of the invention, a plurality of the grounding end portions are electrically connected to a grounding end after being connected in series with a capacitor.
By implementing the invention, at least the following progressive effects can be achieved:
one, different plasma densities can be selectively generated at different parts by the coil, so that different cleaning energies can be generated in the reaction chamber.
Secondly, the level of impurity particles in the reaction chamber can be reduced.
So that those skilled in the art can readily understand the disclosure, the claims and the drawings, and can easily understand the objects and advantages of the present invention, the detailed features and advantages of the present invention will be described in detail in the embodiments.
Drawings
FIG. 1 is a live view of the interior of a reaction chamber of a prior art etcher after use for a period of time;
FIG. 2 is a schematic diagram of a coil current distribution type etching machine for a single plasma reaction chamber according to an embodiment of the present invention;
fig. 3 is a schematic diagram of an anti-surge capacitor disposed between the first power module and the ground terminal shown in fig. 2;
FIG. 4 is a schematic diagram of the first C-shaped coil shown in FIG. 2, wherein the grounding end is connected in series with a capacitor and then grounded;
FIG. 5 is a schematic diagram of a coil current distribution type etching machine of a dual plasma reaction chamber according to an embodiment of the present invention;
fig. 6 is a schematic diagram of the second power module shown in fig. 5 and a ground terminal having a spike-proof capacitor disposed therebetween;
FIG. 7 is a schematic diagram of the first C-shaped coil shown in FIG. 5 with a capacitor connected in series with the grounding end and then grounded;
FIG. 8 is a simulation of the first and second C-coil plasma reaction and cleaning in accordance with the first embodiment of the present invention;
FIG. 9 is a simulation of the first and second C-coil plasma reactions and cleaning in accordance with a second embodiment of the present invention;
FIG. 10 is a simulation of the plasma reaction and cleaning of the first and second C-type coils according to the third embodiment of the present invention; and
FIG. 11 is a simulation of the first and second C-coil plasma reaction and cleaning according to a fourth embodiment of the present invention.
[ notation ] to show
P101: dark regions
P102: light-colored areas
100: etching machine structure of coil current distribution type
110: a first plasma reaction chamber
111: a first reaction chamber
120a, 120b, 120 c: first C-shaped coil
121a, 121b, 121 c: first input terminal
122a, 122b, 122 c: first ground terminal
130: first power supply module
131a, 131b, 131 c: a first variable capacitor
210: the second plasma reaction chamber
211: a second reaction chamber
220a, 220b, 220 c: second C-shaped coil
221a, 221b, 221 c: second input terminal
222a, 222b, 222 c: second ground terminal
230: second power supply module
231a, 231b, 231 c: second variable capacitor
C1: anti-surge capacitor
C2: isolation capacitor
GL: grounding terminal
I11, I12, I13: first current
I21, I22, I23: the second current
Detailed Description
As shown in fig. 2, the present embodiment provides a coil current distribution type etching machine structure 100, which includes: a first plasma reaction chamber 110; a plurality of first C- type coils 120a, 120b, 120C; and a first power module 130.
The first plasma reaction chamber 110 is, for example, a plasma reaction chamber capable of completing an etching process, and the first plasma reaction chamber 110 has a first reaction chamber 111.
First C- type coils 120a, 120b, and 120C formed at the periphery of the first reaction chamber 111 in an up-down arrangement, the first C- type coils 120a, 120b, and 120C mainly providing energy for the first reaction chamber 111 to generate plasma; each of the first C-shaped coils 120a, 120b, 120C has a first input end 121a, 121b, 121C and a first ground end 122a, 122b, 122C.
The first C- type coils 120a, 120b, and 120C may be arranged in parallel with each other and/or at equal intervals.
The first power module 130 mainly provides power for the first C-shaped coils 120A, 120b, 120C, and the first power module 130 is electrically connected to the first input ends 121A, 121b, 121C through a plurality of first variable capacitors 131A, 131b, 131C, so that by changing the capacitance of each of the first variable capacitors 131A, 131b, 131C, the magnitudes of the first currents I11, I12, I13 passing through each of the first C-shaped coils 120A, 120b, 120C can be respectively controlled, for example, between 1A (ampere) and 20A, and the ratio thereof is, for example, 10A:10A, 1A:10A:20A, 20A:10A:1A, and the like, which can be arbitrarily combined.
The distribution of the first currents I11, I12, I13 is determined according to the location and degree of the fouling in the first reaction chamber 111, and the arrangement of the first currents I11, I12, I13 can make a specific first C- type coil 120a, 120b, 120C generate a specific magnetic field energy, generate different plasma energies at the corresponding location in the first reaction chamber 111, generate plasma with high energy by using a larger current at a location with deep fouling, and generate plasma with low energy by using a smaller current at a location with low fouling, so that the inner wall of the corresponding first reaction chamber 111 can generate cleaning energy with different degrees.
As shown in fig. 3 and 4, in order to avoid the surge when the first power module 130 is input, a surge-preventing capacitor C1 may be disposed between the first power module 130 and the ground GL. In order to ensure the loop of the first C- type coils 120a, 120b, and 120C, dc or noise can be effectively blocked, the first grounding ends 122a, 122b, and 122C can be electrically connected to the grounding terminal GL after being connected in series to the isolation capacitor C2.
As shown in FIG. 5, in some processes, the etcher structure 100 may be used with a second plasma reaction chamber 210, and thus the etcher structure 100 may further comprise: a second plasma reaction chamber 210; a plurality of second C-shaped coils 220a, 220b, 220C; and a second power module 230.
The second plasma reaction chamber 210 is, for example, a plasma reaction chamber capable of completing an etching process, and the second plasma reaction chamber 210 has a second reaction chamber 211 communicated with the first reaction chamber 111.
Second C-shaped coils 220a, 220b, 220C formed at the periphery of the second reaction chamber 211 in an up-down arrangement, the second C-shaped coils 220a, 220b, 220C mainly providing energy for the second reaction chamber 211 to generate plasma; each of the second C-shaped coils 220a, 220b, 220C has a second input end 221a, 221b, 221C and a second ground end 222a, 222b, 222C.
The second C- type coils 220a, 220b and 220C may be arranged in parallel with each other and/or at equal intervals.
The second power module 230 mainly provides power for the second C-shaped coils 220A, 220b, 220C, and the second power module 230 is electrically connected to the second input terminals 221A, 221b, 221C through a plurality of second variable capacitors 231A, 231b, 231C, so that by changing the capacitance of each of the second variable capacitors 231A, 231b, 231C, the magnitudes of the second currents I21, I22, I23 passing through each of the second C-shaped coils 220A, 220b, 220C can be respectively controlled, for example, between 1A and 20A, and for example, the ratio thereof is 10A:10A, 1A:10A:20A, 20A:10A:1A, and the like, which can be arbitrarily combined.
The distribution of the second currents I21, I22, I23 is determined according to the location and degree of the fouling in the second reaction chamber 211, and the arrangement of the second currents I22, I23, I3 can make a specific second C-shaped coil 220a, 220b, 220C generate a specific magnetic field energy, generate different plasma energies at the corresponding location in the second reaction chamber 211, generate plasma with high energy by using a larger current at a location with deep fouling, generate plasma with low energy by using a smaller current at a location with low fouling, and generate different degrees of cleaning energy at the inner wall of the corresponding second reaction chamber 211.
As shown in fig. 6 and 7, in order to avoid the surge when the second power module 230 is inputted, a surge-preventing capacitor C1 may be disposed between the second power module 230 and the ground GL. In order to ensure the loop of the second C- type coils 220a, 220b, and 220C, dc or noise can be effectively blocked, the second ground terminals 222a, 222b, and 222C can be electrically connected to the ground terminal GL after being connected in series to the isolation capacitor C2.
As shown in fig. 8, which is a half-edge simulation using the first reaction chamber 111, 1: 1: 1, for example 20A: 20A: the first currents I11, I12, I13 of 20A are used to generate plasma reaction in the first reaction chamber 111 at the corresponding positions of the first C-type coils 120A, 120b and perform the cleaning operation of the inner wall scale of the first reaction chamber 111.
As shown in fig. 9, which is a half-edge simulation using the first reaction chamber 111, 1: 0: 0, for example 20A: 0A: the first currents I11, I12, I13 of 0A are used to generate plasma reaction in the first reaction chamber 111 at the corresponding positions of the first C-type coils 120A, 120b and perform the cleaning operation of the inner wall scale of the first reaction chamber 111.
As shown in fig. 10, which is a half-edge simulation using the first reaction chamber 111, 0: 1: 0, for example, is 0A: 20A: the first currents I11, I12, I13 of 0A are used to generate plasma reaction in the first reaction chamber 111 at the corresponding positions of the first C-type coils 120A, 120b and perform the cleaning operation of the inner wall scale of the first reaction chamber 111.
As shown in fig. 11, which is a half-edge simulation using the first reaction chamber 111, 0: 0: 1, for example 0A: 0A: the first currents I11, I12, I13 of 20A are used to generate plasma reaction in the first reaction chamber 111 at the corresponding positions of the first C-type coils 120A, 120b and perform the cleaning operation of the inner wall scale of the first reaction chamber 111.
When the inner wall scale cleaning operation of the second reaction chamber 211 is to be performed, the same cleaning effect can be achieved as compared with the operation of fig. 8 to 11.
While the foregoing embodiments have been described in a specific embodiment, it will be appreciated that those skilled in the art, upon attaining an understanding of the disclosure of the present invention, may readily conceive of alterations to, variations of, and equivalents to these embodiments which may be practiced without departing from the spirit and scope of the present invention, which should be assessed accordingly to that of the appended claims.
Claims (10)
1. A coil current distribution etcher structure comprising:
a first plasma reaction chamber having a first reaction chamber;
a plurality of first C-shaped coils arranged at the periphery of the first reaction chamber in an upper and lower direction, each first C-shaped coil having a first input end and a first ground end; and
the first power supply module is electrically connected with the first input end in a one-to-one mode through a plurality of first variable capacitors.
2. The etcher structure of claim 1 wherein the plurality of first C-coils are arranged parallel to one another.
3. The etcher structure of claim 1 wherein the plurality of first C-coils are arranged at equal intervals from one another.
4. The structure of claim 1, wherein an anti-glitch capacitor is disposed between the first power module and the ground.
5. The structure of claim 1, wherein a plurality of the grounding terminals are electrically connected to a ground terminal after being connected in series with a capacitor.
6. The etcher structure of claim 1 further comprising:
a second plasma reaction chamber having a second reaction chamber in communication with the first reaction chamber;
a plurality of second C-shaped coils arranged at the periphery of the second reaction chamber in an upper and lower direction, each second C-shaped coil having a second input end and a second ground end; and
the second power supply module is electrically connected with the second input end in a one-to-one mode through a plurality of second variable capacitors.
7. The etcher structure of claim 6 wherein the plurality of second C-coils are arranged parallel to one another.
8. The etcher structure of claim 6, wherein the plurality of second C-coils are arranged at equal intervals with respect to each other.
9. The structure of claim 6, wherein an anti-glitch capacitor is disposed between the second power module and the ground.
10. The structure of claim 6, wherein a plurality of the grounding terminals are electrically connected to a ground terminal after being connected in series with a capacitor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010028214.5A CN113130287A (en) | 2020-01-10 | 2020-01-10 | Etching machine structure of coil current distribution type |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010028214.5A CN113130287A (en) | 2020-01-10 | 2020-01-10 | Etching machine structure of coil current distribution type |
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| Publication Number | Publication Date |
|---|---|
| CN113130287A true CN113130287A (en) | 2021-07-16 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010028214.5A Pending CN113130287A (en) | 2020-01-10 | 2020-01-10 | Etching machine structure of coil current distribution type |
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Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW406523B (en) * | 1998-02-11 | 2000-09-21 | Tsai Chuen Hung | Inductively-coupled high density plasma producing apparatus and plasma processing equipment provided with the same |
| US20040182319A1 (en) * | 2003-03-18 | 2004-09-23 | Harqkyun Kim | Inductively coupled plasma generation system with a parallel antenna array having evenly distributed power input and ground nodes |
| CN2785104Y (en) * | 2005-01-27 | 2006-05-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and its inductance coupling plasma equipment |
| US20060124059A1 (en) * | 2003-03-18 | 2006-06-15 | Harqkyun Kim | Inductively coupled plasma generation system with a parallel antenna array having evenly distributed power input and ground nodes and improved field distribution |
| CN101136279A (en) * | 2006-08-28 | 2008-03-05 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Jigger coupling coil and jigger coupling plasma device |
| CN201869430U (en) * | 2010-11-25 | 2011-06-15 | 中微半导体设备(上海)有限公司 | Radio frequency antenna used in plasma generator |
| KR20160095303A (en) * | 2015-02-02 | 2016-08-11 | 에이피티씨 주식회사 | Adaptively plasma source having improved CD uniformity, and plasma chamber using the same |
| CN106298422A (en) * | 2015-06-29 | 2017-01-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and semiconductor processing equipment |
| CN109462929A (en) * | 2018-12-24 | 2019-03-12 | 江苏鲁汶仪器有限公司 | A kind of method and device improving plasma starter and stability |
| US20190088453A1 (en) * | 2017-09-20 | 2019-03-21 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
| CN211125569U (en) * | 2020-01-10 | 2020-07-28 | 聚昌科技股份有限公司 | Etching machine structure of coil current distribution type |
-
2020
- 2020-01-10 CN CN202010028214.5A patent/CN113130287A/en active Pending
Patent Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW406523B (en) * | 1998-02-11 | 2000-09-21 | Tsai Chuen Hung | Inductively-coupled high density plasma producing apparatus and plasma processing equipment provided with the same |
| US20040182319A1 (en) * | 2003-03-18 | 2004-09-23 | Harqkyun Kim | Inductively coupled plasma generation system with a parallel antenna array having evenly distributed power input and ground nodes |
| US20060124059A1 (en) * | 2003-03-18 | 2006-06-15 | Harqkyun Kim | Inductively coupled plasma generation system with a parallel antenna array having evenly distributed power input and ground nodes and improved field distribution |
| CN2785104Y (en) * | 2005-01-27 | 2006-05-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Inductance coupling coil and its inductance coupling plasma equipment |
| CN101136279A (en) * | 2006-08-28 | 2008-03-05 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Jigger coupling coil and jigger coupling plasma device |
| CN201869430U (en) * | 2010-11-25 | 2011-06-15 | 中微半导体设备(上海)有限公司 | Radio frequency antenna used in plasma generator |
| KR20160095303A (en) * | 2015-02-02 | 2016-08-11 | 에이피티씨 주식회사 | Adaptively plasma source having improved CD uniformity, and plasma chamber using the same |
| CN106298422A (en) * | 2015-06-29 | 2017-01-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and semiconductor processing equipment |
| US20190088453A1 (en) * | 2017-09-20 | 2019-03-21 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
| CN109462929A (en) * | 2018-12-24 | 2019-03-12 | 江苏鲁汶仪器有限公司 | A kind of method and device improving plasma starter and stability |
| CN211125569U (en) * | 2020-01-10 | 2020-07-28 | 聚昌科技股份有限公司 | Etching machine structure of coil current distribution type |
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Effective date of registration: 20220517 Address after: Dunhua South Road, Taiwan Taipei 2 China Daan District No. 38 14 floor Applicant after: HERMES-EPITEK Corp. Address before: 16 Guangfu South Road, Shengli village, Hukou Township, Hsinchu County Applicant before: ADVANCED SYSTEM TECHNOLOGY Co.,Ltd. |