CN113122148A - Crystalline silicon alkali polishing additive and use method thereof - Google Patents
Crystalline silicon alkali polishing additive and use method thereof Download PDFInfo
- Publication number
- CN113122148A CN113122148A CN202110374139.2A CN202110374139A CN113122148A CN 113122148 A CN113122148 A CN 113122148A CN 202110374139 A CN202110374139 A CN 202110374139A CN 113122148 A CN113122148 A CN 113122148A
- Authority
- CN
- China
- Prior art keywords
- polishing
- additive
- solution
- silicon wafer
- crystalline silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 72
- 239000000654 additive Substances 0.000 title claims abstract description 45
- 230000000996 additive effect Effects 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000003513 alkali Substances 0.000 title claims abstract description 37
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 66
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 66
- 239000010703 silicon Substances 0.000 claims abstract description 66
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 41
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 40
- 239000008367 deionised water Substances 0.000 claims abstract description 37
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 37
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 33
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims abstract description 33
- 238000006243 chemical reaction Methods 0.000 claims abstract description 28
- SXUVEIHRRJKSGE-UHFFFAOYSA-N CCCCCCCCCCCCN(C(CC)=O)N Chemical compound CCCCCCCCCCCCN(C(CC)=O)N SXUVEIHRRJKSGE-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000006087 Silane Coupling Agent Substances 0.000 claims abstract description 11
- 150000003983 crown ethers Chemical class 0.000 claims abstract description 11
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 claims abstract description 11
- 235000010234 sodium benzoate Nutrition 0.000 claims abstract description 11
- 239000004299 sodium benzoate Substances 0.000 claims abstract description 11
- 239000003109 Disodium ethylene diamine tetraacetate Substances 0.000 claims abstract description 7
- 235000019301 disodium ethylene diamine tetraacetate Nutrition 0.000 claims abstract description 7
- 229920000289 Polyquaternium Polymers 0.000 claims abstract description 6
- ZGTMUACCHSMWAC-UHFFFAOYSA-L EDTA disodium salt (anhydrous) Chemical compound [Na+].[Na+].OC(=O)CN(CC([O-])=O)CCN(CC(O)=O)CC([O-])=O ZGTMUACCHSMWAC-UHFFFAOYSA-L 0.000 claims abstract 3
- 239000000243 solution Substances 0.000 claims description 32
- 238000004140 cleaning Methods 0.000 claims description 31
- 239000002253 acid Substances 0.000 claims description 19
- 239000012670 alkaline solution Substances 0.000 claims description 16
- 238000005406 washing Methods 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 8
- 230000035484 reaction time Effects 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000007667 floating Methods 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 claims description 2
- 239000002585 base Substances 0.000 claims 1
- 238000007517 polishing process Methods 0.000 abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 7
- 238000002310 reflectometry Methods 0.000 abstract description 6
- 238000004070 electrodeposition Methods 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 56
- 238000010586 diagram Methods 0.000 description 10
- 239000010410 layer Substances 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 8
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 6
- 238000003756 stirring Methods 0.000 description 6
- 238000005303 weighing Methods 0.000 description 6
- 150000003863 ammonium salts Chemical group 0.000 description 5
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- BDOYKFSQFYNPKF-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]acetic acid;sodium Chemical compound [Na].[Na].OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O BDOYKFSQFYNPKF-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910002026 crystalline silica Inorganic materials 0.000 description 2
- 229960001484 edetic acid Drugs 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000013585 weight reducing agent Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/04—Aqueous dispersions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dispersion Chemistry (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention relates to the technical field of crystalline silicon, and discloses a crystalline silicon alkali polishing additive, which comprises the following components: a crown ether; citric acid; a polyquaternium; disodium ethylene diamine tetraacetate; a silane coupling agent; dodecyl amino propionamide; sodium benzoate; deionized water. The invention is based on the alkali polishing process, and the additive of the invention is added into inorganic alkali solution such as potassium hydroxide or sodium hydroxide to prepare polishing solution, and the additive enables the reaction of the inorganic alkali with silicon and silicon oxide to present extremely strong selectivity during polishing, namely the additive promotes the reaction of the inorganic alkali with silicon and inhibits the reaction of the inorganic alkali with silicon oxide. When the method is used in the polishing process for producing the crystalline silicon solar cell, the reflectivity of the back surface of the silicon wafer is high, the PN junction of the front surface is kept intact, and the PN junction at the electrode position including laser SE treatment is also kept intact.
Description
Technical Field
The invention relates to the technical field of crystalline silicon, in particular to a crystalline silicon alkali polishing additive and a using method thereof.
Background
In a manufacturing process of a crystalline silicon solar cell, in order to improve photoelectric conversion efficiency of the solar cell, polishing treatment is often performed on the back surface of a diffused silicon wafer, and a PN junction on the front surface of the silicon wafer is required to be not damaged. At present, the mainstream back polishing process mainly comprises an alkali polishing process and an acid polishing process, wherein the acid polishing process uses hydrofluoric acid, nitric acid, sulfuric acid and a water system to corrode a silicon wafer, the silicon wafer horizontally floats on the surface of polishing solution when polished by the method, only the back of the silicon wafer contacts and reacts with the polishing solution, and the front PN junction cannot be damaged, but the surface reflectivity of the silicon wafer polished by the method is low, and the production cost and the waste liquid treatment cost are very high due to the fact that a large amount of acidic substances are used in the acid polishing process. The alkali polishing process mainly utilizes organic alkali such as tetramethyl ammonium hydroxide and the like to polish silicon wafers, and the method can obtain high surface reflectivity, but the cost of the tetramethyl ammonium hydroxide used in the process is high, and the wastewater treatment difficulty is high; if inorganic alkali such as potassium hydroxide or sodium hydroxide with low cost is used, the reaction rate difference between the inorganic alkali and silicon oxide is small, so that the silicon oxide protective layer on the front surface of the silicon wafer is corroded very easily during polishing, the PN junction on the front surface is damaged, and finally the battery fails.
Particularly, as the requirement on the photoelectric conversion efficiency is higher and higher along with the development of the industry at present, the industry starts to apply the laser SE technology on a large scale, the technology utilizes laser to form heavy doping at the position of a front electrode, the contact performance of the electrode and a silicon wafer can be obviously improved, and the photoelectric conversion efficiency of a battery is improved, but the technology can damage silicon oxide on the front side, so that the silicon wafer treated by the laser SE is oxidized again at present. However, the electrode position is extremely damaged due to the surface topography ablated by the laser, and the oxidized layer of the electrode position is thin and uneven after oxidation. The PN junction on the front side is easily damaged using conventional alkaline polishing processes, eventually leading to cell failure.
Disclosure of Invention
The invention aims to provide a crystalline silicon alkali polishing additive and a using method thereof.
In order to achieve the purpose, the invention provides the following technical scheme: a crystalline silicon alkali polishing additive comprising the following components:
a crown ether;
citric acid;
a polyquaternium;
disodium ethylene diamine tetraacetate;
a silane coupling agent;
dodecyl amino propionamide;
sodium benzoate;
deionized water.
Preferably, the components of the paint comprise the following components in percentage by mass:
crown ethers: 5.0 to 6.0 percent;
citric acid: 2.0-4.0%;
polyquaternium: 2.0 to 2.5 percent;
disodium ethylene diamine tetraacetate: 1.5 to 2.0 percent;
silane coupling agent: 0.5-1.5%;
dodecyl amino propionamide: 0.1 to 0.5 percent;
sodium benzoate: 0.3 to 0.5 percent;
deionized water: 83 to 88.6 percent.
A method for using crystalline silica-based polishing additive comprises the steps of adding a proper amount of crystalline silica-based polishing additive into alkaline solution, mixing uniformly to prepare polishing solution, and putting into a silicon wafer to complete polishing reaction.
Preferably, the additive accounts for 0.5-1.5% of the total volume of the polishing solution, and the alkaline solution is sodium hydroxide or potassium hydroxide solution, wherein the content of potassium hydroxide or sodium hydroxide in the polishing solution is 10-200 g/L.
Preferably, the temperature of the polishing reaction is 50-80 ℃, and the reaction time is 120-360 s.
Preferably, the silicon wafer is placed in a manner of being immersed in the polishing solution in a horizontal or vertical manner or floating on the surface of the polishing solution in a horizontal manner.
Preferably, the silicon wafer is one of a silicon wafer with an oxide layer on one side or a silicon wafer without an oxide layer on both sides.
Preferably, after the polishing reaction of the silicon wafer is finished, washing the silicon wafer by deionized water, post-treating, washing, acid washing and drying after washing, wherein the post-treating process is a mixed solution of 0.1-2% of KOH or NaOH and 1-8% of H2O2, the temperature is 40-70 ℃, and the washing time is 60-300 s;
the acid cleaning process comprises the following steps of HF: HCl: H2O-1: 2:4 mixed acid solution, the acid washing temperature is 10-40 ℃, and the acid washing time is 60-300 s.
The invention provides a crystalline silicon alkali polishing additive and a using method thereof. The method has the following beneficial effects:
the invention provides a crystalline silicon alkali polishing additive and a using method thereof. The invention is based on the alkali polishing process, and the additive of the invention is added into inorganic alkali solution such as potassium hydroxide or sodium hydroxide to prepare polishing solution, and the additive enables the reaction of the inorganic alkali with silicon and silicon oxide to present extremely strong selectivity during polishing, namely the additive promotes the reaction of the inorganic alkali with silicon and inhibits the reaction of the inorganic alkali with silicon oxide. When the method is used in the polishing process for producing the crystalline silicon solar cell, the reflectivity of the back surface of the silicon wafer is high, the PN junction of the front surface is kept intact, and the PN junction at the electrode position including laser SE treatment is also kept intact.
Drawings
FIG. 1 is a diagram showing a state in which a silicon wafer of the present invention is vertically immersed in a polishing solution;
FIG. 2 is a view showing the contact state between the flat bottom of the silicon wafer and the liquid surface of the polishing solution according to the present invention;
FIG. 3 is a diagram showing a state in which a silicon wafer of the present invention is immersed in a polishing solution while being laid flat;
FIG. 4 is a process flow diagram of the present invention for forming an oxide layer on a single side of a silicon wafer;
FIG. 5 is a schematic diagram of a silicon wafer fabricated by the process of FIG. 4.
Detailed Description
The first embodiment is as follows:
s1, preparing 100mL of additive, wherein the additive comprises the following components: 5.0% of crown ether, 2.0% of citric acid, 2.0% of polyquaternium, 1.5% of ethylene diamine tetraacetic acid, 0.5% of silane coupling agent, 0.1% of dodecyl amino propionamide, 0.3% of sodium benzoate and the balance of deionized water;
s2, weighing 10g of potassium hydroxide, adding the potassium hydroxide into 1L of deionized water, and preparing an alkaline solution with the alkali concentration of 10 g/L;
s3, adding the additive of 10mLS1 into the alkaline solution of S2, and stirring and mixing uniformly to form polishing solution;
s4, manufacturing a silicon wafer with an oxide layer on one side by adopting the process flow shown in FIG. 4, wherein FIG. 5 is a schematic structural diagram of the silicon wafer manufactured by the method;
s5, putting the silicon wafer manufactured in the step S4 into the polishing solution prepared in the step S3 in a mode shown in figure 1 to finish the polishing reaction, wherein the temperature of the polishing reaction is controlled to be 50 ℃, and the reaction time is 360 seconds;
s6, taking out the silicon wafer in the step S5, and drying the silicon wafer after deionized water cleaning, post-treatment, deionized water cleaning, acid cleaning and deionized water cleaning in sequence.
Example two:
s1, preparing 100mL of additive, wherein the additive comprises the following components: 6.0 percent of crown ether, 4.0 percent of citric acid, 2.5 percent of polyquaternary ammonium salt, 2.0 percent of ethylene diamine tetraacetic acid, 1.5 percent of silane coupling agent, 0.5 percent of dodecyl amino propionamide, 0.5 percent of sodium benzoate and the balance of deionized water
S2, weighing 200g of potassium hydroxide, adding into 1L of deionized water, and preparing into an alkaline solution with the alkali concentration of 200 g/L.
S3, adding the additive of 10mLS1 into the alkaline solution of S2, and stirring and mixing uniformly to form the polishing solution.
S4, manufacturing a silicon wafer with an oxide layer on one side by adopting the process flow shown in FIG. 4, and FIG. 5 is a schematic structural diagram of the silicon wafer manufactured by the method.
S5, putting the silicon wafer manufactured in the S4 into the polishing solution prepared in the S3 in the mode shown in figure 1 to complete the polishing reaction, wherein the temperature of the polishing reaction is controlled to be 80 ℃, and the reaction time is 120S.
And S6, taking out the silicon wafer of S5, and drying the silicon wafer after deionized water cleaning, post-treatment, deionized water cleaning, acid cleaning and deionized water cleaning in sequence.
Example three:
s1, preparing 100mL of additive, wherein the additive comprises the following components: 6.0% of crown ether, 3.0% of citric acid, 2.5% of polyquaternary ammonium salt, 1.5% of disodium ethylene diamine tetraacetate, 0.5% of silane coupling agent, 0.1% of dodecyl amino propionamide, 0.3% of sodium benzoate and the balance of deionized water.
S2, weighing 30g of potassium hydroxide, adding into 1L of deionized water, and preparing into an alkaline solution with the alkali concentration of 30 g/L.
S3, adding 10mL of the additive obtained in the step S1 into the alkaline solution obtained in the step S2, and stirring and mixing uniformly to form the polishing solution.
S4, manufacturing a silicon wafer with an oxide layer on one side by adopting the process flow shown in FIG. 4, and FIG. 5 is a schematic structural diagram of the silicon wafer manufactured by the method.
S5, putting the silicon wafer manufactured in the S4 into the polishing solution prepared in the S3 in the mode shown in figure 1 to complete the polishing reaction, wherein the temperature of the polishing reaction is controlled to be 65 ℃, and the reaction time is 240S.
And S6, taking out the silicon wafer of S5, and drying the silicon wafer after deionized water cleaning, post-treatment, deionized water cleaning, acid cleaning and deionized water cleaning in sequence.
Example four:
s1, preparing 100mL of additive, wherein the additive comprises the following components: 6.0% of crown ether, 3.0% of citric acid, 2.0% of polyquaternary ammonium salt, 1.5% of disodium ethylene diamine tetraacetate, 1.0% of silane coupling agent, 0.3% of dodecyl amino propionamide, 0.3% of sodium benzoate and the balance of deionized water.
S2, weighing 20g of sodium hydroxide, and adding the sodium hydroxide into 1L of deionized water to prepare an alkaline solution with the alkali concentration of 20 g/L.
S3, adding the additive of 10mLS1 into the alkaline solution of S2, and stirring and mixing uniformly to form the polishing solution.
S4, manufacturing a silicon wafer with an oxide layer on one side by adopting the process flow shown in FIG. 4, and FIG. 5 is a schematic structural diagram of the silicon wafer manufactured by the method.
S5, putting the silicon wafer manufactured in the S4 into the polishing solution prepared in the S3 in the mode shown in figure 1 to complete the polishing reaction, wherein the temperature of the polishing reaction is controlled to be 65 ℃, and the reaction time is 240S.
And S6, taking out the silicon wafer of S5, and drying the silicon wafer after deionized water cleaning, post-treatment, deionized water cleaning, acid cleaning and deionized water cleaning in sequence.
Example five:
s1, preparing 100mL of additive, wherein the additive comprises the following components: 5.0% of crown ether, 3.0% of citric acid, 2.0% of polyquaternary ammonium salt, 1.5% of ethylene diamine tetraacetic acid disodium, 1.0% of silane coupling agent, 0.3% of dodecyl amino propionamide, 0.3% of sodium benzoate and the balance of deionized water.
S2, weighing 200g of potassium hydroxide, adding into 1L of deionized water, and preparing into an alkaline solution with the alkali concentration of 200 g/L.
S3, adding the additive of 10mLS1 into the alkaline solution of S2, and stirring and mixing uniformly to form the polishing solution.
S4, manufacturing a silicon wafer with an oxide layer on one side by adopting the process flow shown in FIG. 4, and FIG. 5 is a schematic structural diagram of the silicon wafer manufactured by the method.
S5, putting the silicon wafer manufactured in the step S4 into the polishing solution prepared in the step S3 in the mode shown in FIG. 2 to complete the polishing reaction, wherein the temperature of the polishing reaction is controlled to be 80 ℃, and the reaction time is 120S.
S6, taking out the silicon wafer in the step S5, and drying the silicon wafer after deionized water cleaning, post-treatment, deionized water cleaning, acid cleaning and deionized water cleaning in sequence.
Example six:
s1, preparing 100mL of additive, wherein the additive comprises the following components: 5.0% of crown ether, 3.0% of citric acid, 2.0% of polyquaternary ammonium salt, 1.5% of ethylene diamine tetraacetic acid disodium, 1.0% of silane coupling agent, 0.3% of dodecyl amino propionamide, 0.3% of sodium benzoate and the balance of deionized water.
S2, weighing 60g of potassium hydroxide, adding into 1L of deionized water, and preparing into an alkaline solution with the alkali concentration of 60 g/L.
S3, adding the additive of 10mLS1 into the alkaline solution of S2, and stirring and mixing uniformly to form the polishing solution.
S4, manufacturing a silicon wafer with an oxide layer on one side by adopting the process flow shown in FIG. 4, and FIG. 5 is a schematic structural diagram of the silicon wafer manufactured by the method.
S5, putting the silicon wafer manufactured in the S4 into the polishing solution prepared in the S3 in the mode shown in the figure 3 to complete the polishing reaction, wherein the temperature of the polishing reaction is controlled to be 65 ℃, and the reaction time is 120S.
And S6, taking out the silicon wafer of S4, and drying the silicon wafer after deionized water cleaning, post-treatment, deionized water cleaning, acid cleaning and deionized water cleaning in sequence.
The silicon wafers prepared in the above examples 1 to 6 were subjected to the reflectance, thinning amount and sheet resistance change value tests, in which the reflectance was measured using a D8 reflectance tester; the thinning amount is firstly weighed by balance to obtain the weight reduction of the silicon wafer before and after polishing, then the weight reduction is divided by the original weight and multiplied by the original thickness to obtain the thinning amount; the variance of the sheet resistance was measured using a four-probe sheet resistance tester.
The test results are shown in the table I:
table one: the silicon wafer weight loss, reflectivity and sheet resistance change values obtained in examples 1 to 6 were as follows:
| sample (I) | Amount of thinning | Reflectivity of light | Variance of sheet resistance |
| Example 1 | 2.19μm | 48.0％ | +10Ω/□ |
| Example 2 | 5.48μm | 49.5％ | +12Ω/□ |
| Example 3 | 3.29μm | 49.5％ | +8Ω/□ |
| Example 4 | 3.44μm | 49.3％ | +11Ω/□ |
| Example 5 | 2.82μm | 48.5％ | +5Ω/□ |
| Example 6 | 3.29μm | 49.0％ | +10Ω/□ |
Claims (8)
1. A crystalline silicon alkali polishing additive, comprising the following components:
a crown ether;
citric acid;
a polyquaternium;
disodium ethylene diamine tetraacetate;
a silane coupling agent;
dodecyl amino propionamide;
sodium benzoate;
deionized water.
2. A crystalline silicon alkali polishing additive as claimed in claim 1, wherein: the weight percentage of the components is as follows:
crown ethers: 5.0 to 6.0 percent;
citric acid: 2.0-4.0%;
polyquaternium: 2.0 to 2.5 percent;
disodium ethylene diamine tetraacetate: 1.5 to 2.0 percent;
silane coupling agent: 0.5-1.5%;
dodecyl amino propionamide: 0.1 to 0.5 percent;
sodium benzoate: 0.3 to 0.5 percent;
deionized water: 83 to 88.6 percent.
3. A method of using a crystalline silicon alkali polishing additive as claimed in claim 2, wherein: and adding a proper amount of crystalline silica-base polishing additive into the alkaline solution, uniformly mixing to prepare polishing solution, and putting the polishing solution into a silicon wafer to complete the polishing reaction.
4. A method of using a crystalline silicon alkali polishing additive as claimed in claim 3, wherein: the additive accounts for 0.5-1.5% of the total volume of the polishing solution, and the alkaline solution is sodium hydroxide or potassium hydroxide solution, wherein the content of potassium hydroxide or sodium hydroxide in the polishing solution is 10-200 g/L.
5. A method of using a crystalline silicon alkali polishing additive as claimed in claim 3, wherein: the temperature of the polishing reaction is 50-80 ℃, and the reaction time is 120-360 s.
6. A method of using a crystalline silicon alkali polishing additive as claimed in claim 3, wherein: the silicon wafer is placed in a manner of being immersed in the polishing solution in a horizontal or vertical manner or floating on the surface of the polishing solution in a horizontal manner.
7. A method of using a crystalline silicon alkali polishing additive as claimed in claim 3, wherein: the silicon wafer is one of a silicon wafer with an oxidation layer on one side or a silicon wafer without oxidation layers on both sides.
8. A method of using a crystalline silicon alkali polishing additive as claimed in claim 3, wherein: after finishing the polishing reaction, sequentially carrying out deionized water cleaning, post-treatment, water cleaning, acid cleaning and water cleaning, and then drying, wherein the post-treatment process is a mixed solution of 0.1-2% of KOH or NaOH and 1-8% of H2O2, the temperature is 40-70 ℃, and the cleaning time is 60-300 s;
the acid cleaning process comprises the following steps of HF: HCl: H2O-1: 2:4 mixed acid solution, the acid washing temperature is 10-40 ℃, and the acid washing time is 60-300 s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110374139.2A CN113122148A (en) | 2021-04-07 | 2021-04-07 | Crystalline silicon alkali polishing additive and use method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110374139.2A CN113122148A (en) | 2021-04-07 | 2021-04-07 | Crystalline silicon alkali polishing additive and use method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113122148A true CN113122148A (en) | 2021-07-16 |
Family
ID=76775331
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110374139.2A Pending CN113122148A (en) | 2021-04-07 | 2021-04-07 | Crystalline silicon alkali polishing additive and use method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113122148A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114141906A (en) * | 2021-11-22 | 2022-03-04 | 西安蓝桥新能源科技有限公司 | Additive for removing plating around topcon battery and application thereof |
| CN114133876A (en) * | 2021-11-04 | 2022-03-04 | 西安蓝桥新能源科技有限公司 | Alkali polishing auxiliary agent for small tower-shaped silicon chip and application thereof |
| CN114351258A (en) * | 2022-01-11 | 2022-04-15 | 江苏捷捷半导体新材料有限公司 | High-reflectivity monocrystalline silicon wafer alkali polishing additive, preparation method and application thereof |
| CN115662877A (en) * | 2022-09-08 | 2023-01-31 | 东海县太阳光新能源有限公司 | Monocrystalline silicon surface cleaning method |
| CN115820132A (en) * | 2022-11-23 | 2023-03-21 | 嘉兴市小辰光伏科技有限公司 | Chain type alkali polishing process additive and application thereof |
| CN115948123A (en) * | 2022-12-12 | 2023-04-11 | 嘉兴市小辰光伏科技有限公司 | Monocrystalline silicon alkali polishing additive and alkali polishing method |
| CN115975512A (en) * | 2022-12-12 | 2023-04-18 | 嘉兴市小辰光伏科技有限公司 | High-reflectivity crystalline silica-base polishing additive and use method thereof |
| WO2023071585A1 (en) * | 2021-10-28 | 2023-05-04 | 常州时创能源股份有限公司 | Additive for alkaline polishing of silicon wafers, and use thereof |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03219000A (en) * | 1989-11-09 | 1991-09-26 | Nippon Steel Corp | Etching method and washing method for silicon wafer |
| JPH09208933A (en) * | 1996-01-29 | 1997-08-12 | Fujimi Inkooporeetetsudo:Kk | Composition for polishing |
| CN1676566A (en) * | 2004-03-29 | 2005-10-05 | Cmp罗姆和哈斯电子材料控股公司 | Abrasives and compositions for chemical mechanical planarization of tungsten and titanium |
| CN1676563A (en) * | 2004-03-29 | 2005-10-05 | Cmp罗姆和哈斯电子材料控股公司 | Compositions and methods for chemical mechanical planarization of tungsten and titanium |
| CN103320018A (en) * | 2013-06-18 | 2013-09-25 | 常州时创能源科技有限公司 | Additive for crystalline silicon polishing solution and application method thereof |
| TW201542773A (en) * | 2014-04-30 | 2015-11-16 | Fujifilm Corp | Etching solution, method for etching in which same is used, method for manufacturing semiconductor substrate product, metal corrosion inhibitor, and metal corrosion-inhibiting composition |
| CN107955974A (en) * | 2018-01-09 | 2018-04-24 | 常州时创能源科技有限公司 | The flocking additive of inverted pyramid textured mono-crystalline silicon piece and its application |
| CN109537058A (en) * | 2018-09-30 | 2019-03-29 | 江苏顺风新能源科技有限公司 | The black silicon preparation process of wet process |
| CN110922970A (en) * | 2019-11-29 | 2020-03-27 | 南京纳鑫新材料有限公司 | PERC battery back polishing additive and technology |
| CN112309849A (en) * | 2020-09-30 | 2021-02-02 | 英利能源（中国）有限公司 | Method for etching and polishing single surface of silicon wafer |
-
2021
- 2021-04-07 CN CN202110374139.2A patent/CN113122148A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03219000A (en) * | 1989-11-09 | 1991-09-26 | Nippon Steel Corp | Etching method and washing method for silicon wafer |
| JPH09208933A (en) * | 1996-01-29 | 1997-08-12 | Fujimi Inkooporeetetsudo:Kk | Composition for polishing |
| CN1676566A (en) * | 2004-03-29 | 2005-10-05 | Cmp罗姆和哈斯电子材料控股公司 | Abrasives and compositions for chemical mechanical planarization of tungsten and titanium |
| CN1676563A (en) * | 2004-03-29 | 2005-10-05 | Cmp罗姆和哈斯电子材料控股公司 | Compositions and methods for chemical mechanical planarization of tungsten and titanium |
| CN103320018A (en) * | 2013-06-18 | 2013-09-25 | 常州时创能源科技有限公司 | Additive for crystalline silicon polishing solution and application method thereof |
| TW201542773A (en) * | 2014-04-30 | 2015-11-16 | Fujifilm Corp | Etching solution, method for etching in which same is used, method for manufacturing semiconductor substrate product, metal corrosion inhibitor, and metal corrosion-inhibiting composition |
| CN107955974A (en) * | 2018-01-09 | 2018-04-24 | 常州时创能源科技有限公司 | The flocking additive of inverted pyramid textured mono-crystalline silicon piece and its application |
| CN109537058A (en) * | 2018-09-30 | 2019-03-29 | 江苏顺风新能源科技有限公司 | The black silicon preparation process of wet process |
| CN110922970A (en) * | 2019-11-29 | 2020-03-27 | 南京纳鑫新材料有限公司 | PERC battery back polishing additive and technology |
| CN112309849A (en) * | 2020-09-30 | 2021-02-02 | 英利能源（中国）有限公司 | Method for etching and polishing single surface of silicon wafer |
Non-Patent Citations (2)
| Title |
|---|
| 宋玉宝: "半导体表面沾污的放化研究――痕量杂质在硅和二氧化硅上的沉积", 《微纳电子技术》 * |
| 邹文苑等: "表面活性剂在电子与信息技术领域中的应用", 《日用化学品科学》 * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023071585A1 (en) * | 2021-10-28 | 2023-05-04 | 常州时创能源股份有限公司 | Additive for alkaline polishing of silicon wafers, and use thereof |
| CN114133876A (en) * | 2021-11-04 | 2022-03-04 | 西安蓝桥新能源科技有限公司 | Alkali polishing auxiliary agent for small tower-shaped silicon chip and application thereof |
| CN114133876B (en) * | 2021-11-04 | 2022-12-20 | 西安蓝桥新能源科技有限公司 | Alkali polishing auxiliary agent for small tower-shaped silicon chip and application thereof |
| CN114141906A (en) * | 2021-11-22 | 2022-03-04 | 西安蓝桥新能源科技有限公司 | Additive for removing plating around topcon battery and application thereof |
| CN114351258A (en) * | 2022-01-11 | 2022-04-15 | 江苏捷捷半导体新材料有限公司 | High-reflectivity monocrystalline silicon wafer alkali polishing additive, preparation method and application thereof |
| CN115662877A (en) * | 2022-09-08 | 2023-01-31 | 东海县太阳光新能源有限公司 | Monocrystalline silicon surface cleaning method |
| CN115662877B (en) * | 2022-09-08 | 2023-08-04 | 东海县太阳光新能源有限公司 | Monocrystalline silicon surface cleaning method |
| CN115820132A (en) * | 2022-11-23 | 2023-03-21 | 嘉兴市小辰光伏科技有限公司 | Chain type alkali polishing process additive and application thereof |
| CN115948123A (en) * | 2022-12-12 | 2023-04-11 | 嘉兴市小辰光伏科技有限公司 | Monocrystalline silicon alkali polishing additive and alkali polishing method |
| CN115975512A (en) * | 2022-12-12 | 2023-04-18 | 嘉兴市小辰光伏科技有限公司 | High-reflectivity crystalline silica-base polishing additive and use method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113122148A (en) | Crystalline silicon alkali polishing additive and use method thereof | |
| CN105576080B (en) | The Buddha's warrior attendant wire cutting polysilicon chip and its etching method of a kind of one texture-etching side | |
| CN102181935B (en) | Method and corrosive liquid for making texture surface of monocrystalline silicon | |
| CN102220645B (en) | Method for texturing silicon wafer cut by diamond wire | |
| CN104347756A (en) | One-sided polishing method for monocrystalline silicon wafer for solar battery | |
| CN107904663A (en) | A kind of crystalline silicon polishing additive and its application method for crystal silicon polishing | |
| CN106024988A (en) | One-step wet black silicon preparation and surface treatment method | |
| CN110524398A (en) | A kind of additive for the polishing of crystalline silicon acidity and acid polishing method | |
| CN110205035B (en) | Additive and application and use method thereof | |
| CN110344122A (en) | The method for making single crystal silicon into wool of low flocking additive consumption | |
| CN101851757B (en) | Additive of wool making solution for monocrystalline silicon pieces and using method | |
| CN115820132A (en) | Chain type alkali polishing process additive and application thereof | |
| CN101851756A (en) | Additive of alkali wool making solution for monocrystalline silicon pieces and using method | |
| CN210325830U (en) | Large-size laminated tile battery texturing equipment | |
| CN107623053A (en) | Diamond wire silicon chip based on chain-type texture-etching equipment receives micro- matte preparation method | |
| CN114292708A (en) | Silicon wafer cleaning agent for cleaning solar cell before texturing and use method | |
| CN104060325A (en) | Polycrystalline silicon texturing solution and texturing method thereof | |
| CN111593412B (en) | Additive for chain type texture surface making of monocrystalline silicon piece and application thereof | |
| CN109119338A (en) | A kind of highback polishing and efficient single crystal process | |
| CN104659156B (en) | Etching method of single crystalline silicon solar cell | |
| CN114316804A (en) | Additive for improving monocrystalline silicon alkali polishing appearance problem and polishing process thereof | |
| CN105385359B (en) | The additive of crystalline silicon acid polishing slurry and its application | |
| CN116454174B (en) | Back polishing method of back contact battery | |
| CN112251817B (en) | Inverted pyramid auxiliary texturing additive and application thereof | |
| CN111690987A (en) | Crystal silicon surface fine polishing method based on alkaline polishing gel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |