CN113109860B - Method for predicting heavy ion single event effect section curve of device - Google Patents
Method for predicting heavy ion single event effect section curve of device Download PDFInfo
- Publication number
- CN113109860B CN113109860B CN202110381221.8A CN202110381221A CN113109860B CN 113109860 B CN113109860 B CN 113109860B CN 202110381221 A CN202110381221 A CN 202110381221A CN 113109860 B CN113109860 B CN 113109860B
- Authority
- CN
- China
- Prior art keywords
- single event
- event effect
- proton
- heavy ion
- neutron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000000694 effects Effects 0.000 title claims abstract description 105
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000004364 calculation method Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 17
- 239000011163 secondary particle Substances 0.000 claims abstract description 17
- 238000002474 experimental method Methods 0.000 claims abstract description 13
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 238000001228 spectrum Methods 0.000 claims abstract description 7
- 239000002245 particle Substances 0.000 claims description 22
- 230000014509 gene expression Effects 0.000 claims description 6
- 238000012360 testing method Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 5
- 238000004458 analytical method Methods 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 2
- 239000004519 grease Substances 0.000 claims description 2
- 230000017525 heat dissipation Effects 0.000 claims description 2
- 229920001296 polysiloxane Polymers 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 description 57
- 238000005516 engineering process Methods 0.000 description 4
- 238000004088 simulation Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 230000003471 anti-radiation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000012854 evaluation process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000191 radiation effect Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/36—Measuring spectral distribution of X-rays or of nuclear radiation spectrometry
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
The invention discloses a method for predicting a heavy ion single event effect section curve of a device, which comprises the following steps: carrying out a proton or neutron single event effect experiment on the device, obtaining proton or neutron single event effect section data and carrying out Weibull fitting to obtain a proton or neutron single event effect section curve; constructing a chip structure model, and Meng Ka calculating secondary particle LET spectrums generated in a sensitive layer by nuclear reaction of protons or neutrons with different energies and device materials; estimating two heavy ion single event effect section data points and preliminarily fitting a heavy ion single event effect section curve; integrating the heavy ion single event effect section curve with a secondary particle LET spectrum to obtain a proton or neutron single event effect section of the device; and comparing the integral calculation data with the experimental data, adjusting fitting parameters of the heavy ion single event effect section curve, and repeating the integral until the deviation between the calculation data and the experimental data is within a certain range, thus obtaining the required heavy ion single event effect section curve.
Description
Technical Field
The invention belongs to the field of space radiation effect simulation test technology and anti-radiation reinforcement technology research, and relates to a method for predicting a heavy ion single event effect section curve of a device based on proton or neutron single event effect section.
Background
In the space radiation environment, the single event effect is an important factor affecting the reliability of the spacecraft electronic system, and heavy ions and protons are the main sources for the single event effect of the electronic device. The proton mainly causes the single particle effect by the ionization deposition energy of secondary particles generated by nuclear reaction with the device material in the sensitive area, while the heavy ion causes the single particle effect by the direct ionization deposition energy in the sensitive area. The ground simulation heavy ion single event effect is usually that a heavy ion irradiation device generated by an accelerator is utilized, more than 5 heavy ion LET value points are selected in an experiment, and a relation curve of a device single event effect section and LET value is obtained, so that the evaluation of the single event resistance of the device is carried out.
With the improvement of device performance, the increase of integration level and the development of packaging technology, the flip-chip technology has become a main packaging mode, and the technology has the following characteristics: the device is back-buckled on the base plate, the device and the base plate are connected in a solder bump mode, and a substrate with the thickness of hundreds of micrometers is positioned above the sensitive area of the device. Due to the limited ion energy and range of the heavy ion accelerator, the heavy ions are difficult to penetrate the substrate to reach the device sensitive region. Therefore, when the flip-chip device is subjected to heavy ion accelerator experiments, the device is usually required to be uncapped and thinned, the device is easy to damage in the operation process, on the other hand, for heavy ions with high LET value and high atomic number, the single-core energy is further reduced, the requirements on ion range in the experiments are difficult to meet even for the thinned device, and the evaluation of the single-particle effect of the heavy ions of the flip-chip device is extremely difficult. And the medium-high energy protons have low LET value, so that the energy loss is small when the medium-high energy protons penetrate through the material, the range is long, the medium-high energy protons can effectively pass through the device package and the substrate to reach the sensitive area of the device to cause a single event effect, and the complete proton single event effect section curve of the device is obtained.
Aiming at the problems and the current situation, the correlation of the generation mechanism of the proton and the heavy ion single event effect is considered, a method for predicting the heavy ion single event effect section curve of the device based on the experimental data of the proton or the neutron single event effect is provided, the heavy ion single event effect section curve of the device can be obtained through the experimental data of the proton and corresponding simulation calculation, and the practical problem that the heavy ion single event resistance of the flip device is difficult to evaluate is effectively solved.
Patent application number 200710177960.5, publication number CN100538378C, entitled "method for obtaining the relationship between the single-ion effect section and heavy ion linear energy transfer", provides an experimental method for heavy ion single-ion effect section based on heavy ion accelerator tester; patent application number 202010982765.5, publication number CN112230081A, named "a pulse laser single event effect test equivalent LET value calculation method", provides a method for utilizing pulse laser single event experimental data to equivalent different LET value single event effect cross sections. Patent application number 201711173677.5, publication number CN108008289B, entitled "method for acquiring proton single event effect section", provides a method for acquiring proton single event effect section data based on a heavy ion single event effect section curve. None of these three methods relate to a method of predicting a heavy ion single event effect cross section curve based on a device proton single event effect cross section.
Disclosure of Invention
The invention provides a method for predicting a heavy ion single-particle effect section curve of a device, which can obtain a complete heavy ion single-particle effect section curve of a flip device without developing a heavy ion single-particle effect experiment, provides an effective technical means for evaluating the heavy ion single-particle resistance of the flip device, and overcomes the defect that the heavy ion single-particle effect evaluation process of the flip device is difficult in the prior art.
The technical scheme of the invention is as follows:
the method for predicting the heavy ion single particle effect section curve of the device is characterized by comprising the following steps of:
step one: carrying out a proton or neutron single event effect experiment on the device to be tested to obtain a proton or neutron single event effect section curve of the device;
step two: performing longitudinal cutting analysis on the device, constructing a device structure model, and simulating and calculating secondary particle LET spectrums generated by nuclear reactions of protons or neutrons with different energies and device materials;
step three: estimating 2 heavy ion single event effect section data points through proton data, and preliminarily fitting a heavy ion single event effect section curve;
step four: respectively carrying out integral calculation on the heavy ion single event effect section curve obtained in the step three and the secondary particle LET spectrum under different proton or neutron energies obtained in the step two to obtain proton or neutron single event effect sections under different energies;
step five: and (3) comparing the integral calculation data in the step four with the proton or neutron single event effect experimental data in the step one, continuously adjusting fitting parameters of the heavy ion single event effect section curve of the device when the deviation exceeds a set range, and repeating the step four until the deviation between the integral calculation data and the proton or neutron experimental data is within the set range, wherein the heavy ion single event effect section curve is the obtained result.
Further, the first step specifically comprises:
carrying out device proton or neutron single event effect experiment, carrying out Weibull fitting on the acquired proton or neutron experimental data to obtain a fitted proton or neutron single event effect section curve sigma p (E p )：
In sigma sat-p Is a saturation section of proton or neutron single event effect, and is in unit cm 2 ；E p0 An energy threshold value for single event of proton or neutron, unit MeV; w is a scale parameter; s is a shape parameter; e (E) p Is proton or neutron energy, in MeV.
Further, the second step specifically comprises:
2.1 Longitudinally splitting the device to obtain the thickness and material composition of the encapsulation, heat dissipation silicone grease, the substrate and the sensitive layer of the device, and constructing a sensitive volume model of the device;
2.2 Using Meng Ka particle transport simulation software to calculate energy as E p The protons or neutrons of (a) react with the device material to generate secondary particle probability with LET value L in the sensitive layer, and a probability function p (E p L) versus LET value.
Further, the third step specifically comprises:
3.1 According to the proton single event effect saturation section combination formula (1-2), preliminarily estimating the heavy ion single event effect saturation section data point sigma sat-ion ：
σ sat-ion ＝10 6 ×σ sat-p (1-2)
3.2 Through Monte Care calculation step one, the energy near the inflection point of the section curve of the proton or neutron single event effect is E p Secondary particle equivalent LET values generated in the sensitive layer and counting the probability p (L) that the equivalent LET value is greater than the LET threshold>L 0 ) Estimating another heavy ion single event effect cross section data point sigma from the formula (1-3) ion (L)：
Wherein L is an equivalent LET value, L 0 Is a LET threshold;
3.3 Combining the two heavy ion single event effect cross sections estimated in 3.1) and 3.2), preliminarily fitting a heavy ion single event effect cross section curve according to the formula (1-4)
Further, the fourth step specifically comprises:
the integral expression used in the fourth step is:
in sigma p (E p ) For energy E p Proton or neutron single event cross section; p (E) p L) is energy E p The probability that the proton or neutron of (a) reacts with the device material core to generate secondary particle LET value L; sigma (sigma) ion And (L) is a heavy ion single particle effect cross section with the LET value of L.
Further, the device to be tested is a flip-chip device.
The beneficial effects of the invention are as follows:
1. according to the invention, under the condition that a heavy ion single-particle effect experiment is not required to be carried out, the complete heavy ion single-particle effect section curve of the flip device can be obtained, the technical bottleneck that the heavy ion single-particle resistance of the flip device is difficult to evaluate is solved, and the experiment cost is greatly reduced.
2. The proton or neutron single event effect test can be carried out in the air, and the test of the proton or neutron single event effect cross section can be carried out without unsealing or thinning the device, so that the damage to the device is reduced, and the test difficulty is lowered.
3. The invention starts from the basic mechanism that the secondary particles are generated by nuclear reaction of protons or neutrons and device materials to trigger a single particle effect, the physical concept is clear, and the calculation time and the data precision meet the actual application requirements.
Drawings
FIG. 1 is a flow chart of one embodiment of the present invention;
FIG. 2 is a model of a sensitive volume structure containing information about the material of the device multilayers;
FIG. 3 is a graph of probability function of secondary particles generated in the sensitive layer by nuclear reaction of protons of different energies with device material versus LET value;
FIG. 4 is a preliminary fit heavy ion single event effect cross-section;
FIG. 5 is a graph comparing the deviation between the proton experimental data and the simulated calculated data to the requirement;
fig. 6 is a graph comparing the final calibrated heavy ion single event effect cross section curve with the experimental data of heavy ions.
Detailed Description
Specific embodiments of the present invention will be described in further detail below with reference to the accompanying drawings by taking a flip-chip FPGA device as an example, and the following embodiments are only for illustrating the present invention, but are not intended to limit the scope of the present invention.
Fig. 1 is a flow chart of a method for predicting a device heavy ion single event effect cross section based on a proton single event effect cross section according to the present invention, and the steps of the method are described in detail with reference to fig. 1.
S1, carrying out proton single event effect experiments on flip FPGA devices, and carrying out Weibull fitting on experimental data to obtain a fitted proton single event effect cross-section function, wherein the expression is as follows:
s2, performing longitudinal cutting analysis on the flip FPGA, and constructing a sensitive volume structure model of the device according to longitudinal material process information of the device, wherein the sensitive volume structure model is shown in FIG. 2. Calculating energy E using Monte Carlo particle transport simulation software Geant4 p The probability of secondary particles with LET value L generated in the sensitive layer by nuclear reaction of protons and device materials is obtained, and a probability function p (E p L) versus LET value, see fig. 3.
S3, preliminarily estimating the heavy ion single event upset saturation cross section sigma by the formula (1-2) sat-ion ＝10 6 ×σ sat-p ＝10 6 ×2.1×10 -15 cm 2 /bit＝2.1×10 -9 cm 2 /bit. The equivalent LET value of 40MeV protons in the sensitive layer is 1.71MeV cm by adopting Geant4 for calculation 2 /mg, probability p (L)>L 0 )＝3.17×10 -5 The method comprises the steps of carrying out a first treatment on the surface of the The LET value of 1.71 MeV.cm is estimated by combining the equation (1-3) with the proton single event effect section at 40MeV 2 The single-particle turnover section of the heavy ion per mg is. Through the two pointsThe weibull fit resulted in a preliminary heavy ion single event effect cross section curve, see fig. 4, expressed as:
s4 the secondary particle LET spectrum p (E) generated in the sensitive layer by the reaction of protons with different energies in the expressions (1-7) and S2) in the S3 and the device material core p And L) carrying out integral calculation according to the formula (1-5) to obtain the proton single event upset section under different energies.
S5, comparing the integral calculation data in S4 with the proton single event effect experimental data in S1, wherein the deviation is larger, then continuously adjusting fitting parameters of a heavy ion single event effect section curve of the device, repeating S4 until the deviation between the integral calculation data and the proton experimental data is reduced to a certain range, as shown in fig. 5, and then the heavy ion single event effect section curve at the moment is the required curve, as shown in fig. 6. Wherein, the heavy ion single event effect cross section Weibull curve expression (1-8) is obtained after multiple times of adjustment:
the weibull fitting was performed on the heavy ion single event effect experimental data in fig. 6, and the expression is shown in (1-9):
therefore, the calibration calculation result and the heavy ion single particle experimental result have good consistency.
In another embodiment, the method can also obtain a heavy ion single event effect section curve based on a neutron single event effect section predictor.
Claims (4)
1. A method for predicting a heavy ion single event effect cross section curve of a device, comprising the steps of:
step one: carrying out a proton or neutron single event effect experiment on the device to be tested to obtain a proton or neutron single event effect section curve of the device;
carrying out device proton or neutron single event effect experiment, carrying out Weibull fitting on the acquired proton or neutron experimental data to obtain a fitted proton or neutron single event effect section curve sigma p (E p )：
In sigma sat-p Is a saturation section of proton or neutron single event effect, and is in unit cm 2 ；E p0 An energy threshold value for single event of proton or neutron, unit MeV; w is a scale parameter; s is a shape parameter; e (E) p Proton or neutron energy, in MeV;
step two: performing longitudinal cutting analysis on the device, constructing a device structure model, and simulating and calculating secondary particle LET spectrums generated by nuclear reactions of protons or neutrons with different energies and device materials;
2.2 Using Meng Ka particle transport simulation software to calculate energy as E p The protons or neutrons of (a) react with the device material to generate secondary particle probability with LET value L in the sensitive layer, and a probability function p (E p L) a relationship to LET values;
step three: estimating 2 heavy ion single event effect section data points through proton data, and preliminarily fitting a heavy ion single event effect section curve;
3.1 According to the proton single event effect saturation section combination formula (1-2), preliminarily estimating the heavy ion single event effect saturation section data point sigma sat-ion ：
σ sat-ion ＝10 6 ×σ sat-p (1–2)
σ sat-p Is a saturation cross section of proton or neutron single event effect;
3.2 Through Monte Care calculation in step oneSecondary particle equivalent LET value L generated in sensitive layer by proton with energy Ep near inflection point of proton or neutron single particle effect section curve avg And the probability p (L) that the LET value is greater than the LET threshold is counted>L 0 ) Estimating another heavy ion single event effect cross section data point sigma from the formula (1-3) ion (L avg )：
Wherein L is avg Is equivalent LET value, L is secondary particle LET value, L 0 For LET threshold, σ p (Ep) is a proton or neutron single event effect cross section;
3.3 Combining the two heavy ion single event effect cross sections estimated in 3.1) and 3.2), preliminarily fitting a heavy ion single event effect cross section curve according to the formula (1-4)
Step four: respectively carrying out integral calculation on the heavy ion single event effect section curve obtained in the step three and the secondary particle LET spectrum under different proton or neutron energies obtained in the step two to obtain proton or neutron single event effect sections under different energies;
step five: and (3) comparing the integral calculation data in the step four with the proton or neutron single event effect experimental data in the step one, continuously adjusting fitting parameters of the heavy ion single event effect section curve of the device when the deviation exceeds a set range, and repeating the step four until the deviation between the integral calculation data and the proton or neutron experimental data is within the set range, wherein the heavy ion single event effect section curve is the obtained result.
2. The method for predicting a heavy ion single event effect cross section curve of a device according to claim 1, wherein the step two is specifically:
2.1 Longitudinal split analysis is carried out on the device to obtain the thickness and material composition of the encapsulation, the heat dissipation silicone grease, the substrate and the sensitive layer of the device, and a sensitive volume model of the device is constructed.
3. The method for predicting a heavy ion single event effect cross section curve of a device according to claim 1, wherein the step four is specifically:
the integral expression used in the fourth step is:
in sigma p (E p ) For energy E p Proton or neutron single event cross section; p (E) p L) is energy E p The probability that the proton or neutron of (a) reacts with the device material core to generate secondary particle LET value L; sigma (sigma) ion And (L) is a heavy ion single particle effect cross section with the LET value of L.
4. A method of predicting a device heavy ion single event effect cross section profile as in any one of claims 1 to 3 wherein the device under test is a flip-chip device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110381221.8A CN113109860B (en) | 2021-04-08 | 2021-04-08 | Method for predicting heavy ion single event effect section curve of device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110381221.8A CN113109860B (en) | 2021-04-08 | 2021-04-08 | Method for predicting heavy ion single event effect section curve of device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113109860A CN113109860A (en) | 2021-07-13 |
| CN113109860B true CN113109860B (en) | 2023-12-15 |
Family
ID=76715184
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110381221.8A Active CN113109860B (en) | 2021-04-08 | 2021-04-08 | Method for predicting heavy ion single event effect section curve of device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113109860B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5870697A (en) * | 1996-03-05 | 1999-02-09 | The Regents Of The University Of California | Calculation of radiation therapy dose using all particle Monte Carlo transport |
| KR101689631B1 (en) * | 2016-08-11 | 2016-12-27 | 한국 천문 연구원 | Analysis system for aviation radiation dose |
| CN106650039A (en) * | 2016-12-01 | 2017-05-10 | 中国电子产品可靠性与环境试验研究所 | Method and device for predicting atmospheric neutron single particle effect of electronic device |
| CN108008289A (en) * | 2017-11-22 | 2018-05-08 | 西北核技术研究所 | A kind of acquisition methods in device proton single particle effect section |
| CN109298308A (en) * | 2018-10-24 | 2019-02-01 | 西安空间无线电技术研究所 | Heavy ion indirect ionization leads to semiconductor devices SEU cross section appraisal procedure |
| CN109918723A (en) * | 2019-01-30 | 2019-06-21 | 西安电子科技大学 | A kind of single-particle fault filling method based on particle incidence randomness |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080077376A1 (en) * | 2006-09-25 | 2008-03-27 | Iroc Technologies | Apparatus and method for the determination of SEU and SET disruptions in a circuit caused by ionizing particle strikes |
-
2021
- 2021-04-08 CN CN202110381221.8A patent/CN113109860B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5870697A (en) * | 1996-03-05 | 1999-02-09 | The Regents Of The University Of California | Calculation of radiation therapy dose using all particle Monte Carlo transport |
| KR101689631B1 (en) * | 2016-08-11 | 2016-12-27 | 한국 천문 연구원 | Analysis system for aviation radiation dose |
| CN106650039A (en) * | 2016-12-01 | 2017-05-10 | 中国电子产品可靠性与环境试验研究所 | Method and device for predicting atmospheric neutron single particle effect of electronic device |
| CN108008289A (en) * | 2017-11-22 | 2018-05-08 | 西北核技术研究所 | A kind of acquisition methods in device proton single particle effect section |
| CN109298308A (en) * | 2018-10-24 | 2019-02-01 | 西安空间无线电技术研究所 | Heavy ion indirect ionization leads to semiconductor devices SEU cross section appraisal procedure |
| CN109918723A (en) * | 2019-01-30 | 2019-06-21 | 西安电子科技大学 | A kind of single-particle fault filling method based on particle incidence randomness |
Non-Patent Citations (5)
| Title |
|---|
| 28nm Xilinx Zynq-7000系统芯片单粒子效应研究进展;杜雪成 等;现代应用物理;第8卷(第2期);第1-6页 * |
| A calculation method to estimate single event upset cross section;F.Wrobel et al.;Microelectronics Reliability;第644-649页 * |
| Geant4模拟δ电子对单粒子翻转的影响;刘建德;孙友梅;刘杰;侯明东;张战刚;段敬来;姚会军;翟鹏飞;;原子核物理评论(第04期);第419-424页 * |
| Pattern dependence in synergistic effects of total dose on single-event upset hardness;郭红霞 等;Chin.Phys.B;第25卷(第9期);第1-5页 * |
| 基于蒙特卡洛和器件仿真的单粒子翻转计算方法;王晓晗 等;物理学报;第63卷(第19期);第1-7页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113109860A (en) | 2021-07-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Adams et al. | CRÈME: The 2011 revision of the cosmic ray effects on micro-electronics code | |
| Höeffgen et al. | Investigating the effects of cosmic rays on space electronics | |
| Dodd et al. | Impact of ion energy on single-event upset | |
| Tang et al. | SEMM-2: A modeling system for single event upset analysis | |
| CN108008289B (en) | Method for obtaining device proton single event effect cross section | |
| KR100704333B1 (en) | Semiconductor device evaluation support method and apparatus, and computer-readable recording medium | |
| CN107145638A (en) | SEU cross section acquisition methods caused by a kind of low energy proton direct ionization | |
| Srinivasan et al. | Parameter-free, predictive modeling of single event upsets due to protons, neutrons, and pions in terrestrial cosmic rays | |
| Anashin et al. | Typical facilities and procedure for single event effects testing in roscosmos | |
| CN105866573A (en) | Method for verifying single particle soft error protection design based on heavy ion accelerator | |
| CN104732031B (en) | A kind of device proton upset cross section inversion method based on heavy ion test data | |
| CN113109860B (en) | Method for predicting heavy ion single event effect section curve of device | |
| CN113109859B (en) | Method for obtaining low LET value heavy ion single event upset section | |
| Martinie et al. | Analytical modeling of alpha-particle emission rate at wafer-level | |
| Chumakov et al. | Single-event-effect prediction for ICs in a space environment | |
| Kolbinger et al. | JACoW: The HL-LHC Beam Gas Vertex Monitor-Performance and Design Optimisation Using Simulations | |
| Tang et al. | Importance of BEOL modeling in single event effect analysis | |
| Chumakov et al. | Estimating IC susceptibility to single-event latchup | |
| Lauenstein et al. | Interpreting space-mission LET requirements for SEGR in power MOSFETs | |
| Nikiforov et al. | " RADON-5E" portable pulsed laser simulator: description, qualification technique and results, dosimetry procedure | |
| Lüdeke et al. | Proton direct ionization in sub-micron technologies: Test methodologies and modeling | |
| Nikiforov et al. | Simulation of space radiation effects in microelectronic parts | |
| Nikiforov et al. | CMOS IC transient radiation effects investigations, model verification and parameter extraction with the test structures laser simulation tests | |
| Tang et al. | New simulation methodology for effects of radiation in semiconductor chip structures | |
| Gao et al. | Differences in MBUs induced by high-energy and medium-energy heavy ions in 28 nm FPGAs |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |