CN113098398B - Terahertz D-band planar frequency doubler - Google Patents
Terahertz D-band planar frequency doubler Download PDFInfo
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- H—ELECTRICITY
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- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source
- H03B19/06—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes
- H03B19/14—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source by means of discharge device or semiconductor device with more than two electrodes by means of a semiconductor device
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Abstract
A terahertz D band plane frequency doubler belongs to the technical field of terahertz frequency conversion devices and solves the problem of improving frequency doubling efficiency by designing a terahertz D band plane frequency doubler which is simple in structure, pure in plane and convenient to integrate The parallel Schottky diode pair integrates two Schottky diodes, and the power capacity of the frequency multiplier can be effectively improved.
Description
Technical Field
The invention belongs to the technical field of terahertz frequency conversion devices, and relates to a terahertz D-band planar frequency doubler.
Background
Due to limited spectrum resources in the microwave band, the frequency band adopted by modern communication/radar technology is higher and higher. For example, 5G mobile communication has been used to the millimeter wave band, and 6G mobile communication has been planned to the terahertz band. Although the terahertz frequency band has a certain application at the present stage, the terahertz device is still not rich enough compared with the microwave/millimeter wave frequency band, and many devices still adopt waveguide-type discrete devices, which also leads to the fact that the front-stage terahertz structure is relatively bloated.
The frequency multiplier is one of core devices of the terahertz system and can frequency-multiply a signal source of a microwave frequency band to a terahertz wave band. The Schottky varactor is a core device designed by the existing frequency multiplier, has very high frequency multiplication efficiency compared with the Schottky varactor, and is suitable for high-efficiency high-power frequency multiplication application. Under the current situation that the existing terahertz waveband amplifier is far from mature, frequency multiplication is the mainstream mode for realizing the terahertz signal source at present, and even almost all transmitters of a prototype adopting the terahertz waveband communication/radar principle at present adopt a direct frequency multiplication transmission mode.
In the prior art, a document "Terahertz Sources Based on Frequency Multiplication and theory Applications" published in 2008 (Alain Maestini, Frequency Journal of RF-Engineering and Telecommunications) introduces a Terahertz band Frequency multiplier, and in recent years, the implementation principle and mode of the Frequency multiplier are almost not changed, and researchers only put the research emphasis on the implementation process, so that the Frequency Multiplication efficiency and the output power of the Frequency multiplier can be further increased, and devices are waveguide interfaces and have large volume and weight. Most of reported D-band frequency multipliers adopt waveguide and cavity structures, and transmission lines generally adopt suspended microstrip lines which are installed in a cavity in a suspended mode. This is not conducive to planar integration of multiple devices. The planar frequency multiplier designed by the inventor can be directly integrated with devices such as a planar mixer, an amplifier and the like.
Disclosure of Invention
The invention aims to design a terahertz D waveband planar frequency doubler which is simple in structure, pure in plane and convenient to integrate, so that the frequency doubling efficiency is improved.
The invention solves the technical problems through the following technical scheme:
a terahertz D-band planar frequency doubler, comprising: the circuit comprises an input low-pass filter (1), an input matching circuit (2), a parallel Schottky diode pair (3), an output matching circuit (4), an output quarter-wavelength open circuit (5), a direct current bias circuit (6) and a substrate (7); the input low-pass filter (1), the input matching circuit (2), the parallel Schottky diode pair (3), the output matching circuit (4), the output quarter-wavelength open circuit (5) and the direct current bias circuit (6) are all arranged on the substrate (7); the input matching circuit (2) comprises: a first main transmission line (21), a second main transmission line (22); the parallel Schottky diode pair (3) comprises: a first Schottky diode (31) and a second Schottky diode (32); the output matching circuit (4) comprises: a third main transmission line (41), a fourth main transmission line (42); the direct current bias circuit (6) is used for providing direct current bias for the parallel Schottky diode pair (3); the DC bias circuit (6) comprises: a fifth main transmission line (61), a quarter-wave high impedance line (62), a quarter-wave open line (63); the terahertz D-band planar frequency doubler comprises a first main transmission line (21), a second main transmission line (22), a third main transmission line (41), a fourth main transmission line (42) and a fifth main transmission line (61), which are sequentially connected in series end to end, wherein the output end of an input low-pass filter (1) is connected with the non-series end of the first main transmission line (21), and the input end of the input low-pass filter (1) is used as the radio-frequency input end of the terahertz D-band planar frequency doubler; the first Schottky diode (31) and the second Schottky diode (32) are connected in parallel, the anode of the first Schottky diode (31) is grounded, the cathode of the first Schottky diode is connected to the third main transmission line (41), and the anode of the second Schottky diode (32) is grounded, and the cathode of the second Schottky diode is connected to the third main transmission line (41); the middle point of the output quarter-wave open line (5) is connected to the common point of the third main transmission line (41) and the fourth main transmission line (42) in series, and the output quarter-wave open line (5) is arranged on two sides of the fourth main transmission line (42) in axial symmetry relative to the fourth main transmission line (42); the quarter-wave open line (63) is connected with the fifth main transmission line (61) through a quarter-wave high-impedance line (62).
As a further improvement of the technical scheme of the invention, an input fundamental wave signal reaches a parallel Schottky diode pair (3) after passing through an input low-pass filter (1) and an input matching circuit (2), a high-order harmonic signal including a second harmonic is generated through nonlinearity of a diode, the fundamental wave signal and a third harmonic signal are filtered after passing through an output matching circuit (4) and an output quarter-wavelength open circuit (5), the output signal only has a second harmonic signal, and the second harmonic signal is output after passing through a direct current bias circuit (6), so that second frequency multiplication is realized.
As a further improvement of the technical scheme of the invention, the input low-pass filter (1) adopts a first-order compact microstrip resonance unit.
As a further improvement of the technical scheme of the invention, the output quarter-wave open line (5) is a quarter-wave at the center frequency of the input frequency band.
The invention has the advantages that:
1. the terahertz D-band planar frequency doubler provided by the invention adopts the direct current bias circuit (6) to provide direct current bias for the parallel Schottky diode pair (3), so that the frequency doubling efficiency of the terahertz D-band planar frequency doubler is improved, the terahertz D-band planar frequency doubler can work to a terahertz frequency band, the terahertz frequency doubler at the present stage adopts a waveguide/suspended microstrip three-dimensional structure, and is inconvenient to integrate.
2. The input low-pass filter 1 adopts a first-order compact microstrip resonance unit, and the first-order compact microstrip resonance unit has the advantages of compact structure, wide impedance band and good out-of-band rejection.
3. The parallel Schottky diode pair (3) integrates two Schottky diodes, so that the power capacity of the frequency multiplier can be effectively improved.
Drawings
Fig. 1 is a circuit structure diagram of a terahertz D-band planar frequency doubler according to an embodiment of the present invention;
fig. 2 is a simulation result diagram of a terahertz D-band planar frequency doubler according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The technical scheme of the invention is further described by combining the drawings and the specific embodiments in the specification:
example one
As shown in fig. 1, a terahertz D-band planar frequency doubler includes: the device comprises an input low-pass filter 1, an input matching circuit 2, a parallel Schottky diode pair 3, an output matching circuit 4, an output quarter-wavelength open circuit 5, a direct current bias circuit 6 and a substrate 7; the input low-pass filter 1, the input matching circuit 2, the parallel Schottky diode pair 3, the output matching circuit 4, the output quarter-wavelength open circuit 5 and the direct current bias circuit 6 are all arranged on the substrate 7; the input matching circuit 2 comprises: a first main transmission line 21, a second main transmission line 22; the parallel schottky diode pair 3 includes: a first schottky diode 31, a second schottky diode 32; the output matching circuit 4 comprises: third and fourth main transmission lines 41 and 42; the dc bias circuit 6 includes: a fifth main transmission line 61, a quarter-wave high impedance line 62, a quarter-wave open line 63.
The terahertz D-band planar frequency doubler comprises a first main transmission line 21, a second main transmission line 22, a third main transmission line 41, a fourth main transmission line 42 and a fifth main transmission line 61 which are sequentially connected in series end to end, wherein the output end of an input low-pass filter 1 is connected with the non-series end of the first main transmission line 21, the input end of the input low-pass filter 1 serves as the radio-frequency input end of the terahertz D-band planar frequency doubler, a first Schottky diode 31 is connected with a second Schottky diode 32 in parallel, the anode of the first Schottky diode 31 is grounded, the cathode of the first Schottky diode 31 is connected to the third main transmission line 41, and the anode of the second Schottky diode 32 is grounded and the cathode of the second Schottky diode 32 is connected to the third main transmission line 41.
Two parallel Schottky diodes are connected between the main transmission line and the grounding bonding pad, and an anode grounding mode is adopted, and the Schottky diodes need to form reverse bias, so that the applied bias voltage is positive voltage.
The middle point of the output quarter-wavelength open line 5 is connected to the common point of the third main transmission line 41 and the fourth main transmission line 42 in series, and the output quarter-wavelength open line 5 is arranged on two sides of the fourth main transmission line 42 in axial symmetry with respect to the fourth main transmission line 42; the quarter-wave open line 63 is connected to the fifth main transmission line 61 via a quarter-wave high impedance line 62.
The working principle is as follows: the input fundamental wave signal reaches the parallel Schottky diode pair 3 after passing through the input low-pass filter 1 and the input matching circuit 2, a high-order harmonic signal including a second harmonic is generated through nonlinearity of the diode, the signal passes through the output matching circuit 4 and the output quarter-wavelength open circuit 5, the fundamental wave signal and the third harmonic signal are filtered, the output signal is only a second harmonic signal, the second harmonic signal is output after passing through the direct current bias circuit 6, second frequency multiplication is achieved, and the direct current bias circuit 6 is used for providing direct current bias for the parallel Schottky diode pair 3 so as to improve frequency multiplication efficiency.
In this embodiment, the design of each unit circuit is specifically described by taking a frequency doubler in a D-band (110 to 170GHz, design center frequency of 125GHz) as an example, and is also effective for the design of other bands.
The design criteria include, input frequency: 60-65 GHz, output frequency: 120-130 GHz, output power: not less than 10mW, frequency doubling efficiency: more than or equal to 10 percent, and the thickness of the quartz substrate is 127um by adopting a film quartz substrate process.
The input low-pass filter 1 adopts a first-order compact microstrip resonance unit, the first-order compact microstrip resonance unit has the advantages of compact structure, wide impedance band and good out-of-band rejection, and a radio-frequency signal f is input0Effectively restrain the secondary frequency multiplication signal 2f0(ii) a By optimizing the size structure of the compact microstrip resonance unit, the cut-off frequency of the low-pass filter is about 80GHz, and the rejection degree of 30dB or more can be achieved on the output signal frequency (120-130 GHz) through the input signal frequency (60-65 GHz).
The output quarter-wave open line 5 is a quarter-wave at the input band center frequency (62.5GHz) to form a pair input at a parallel pointThe equivalent short circuit of the signal is grounded, and the input signal is prevented from leaking to the output end; the output quarter-wave open line 5 is bent and compressed in parallel at two sides of the fourth main transmission line 42, and the length of the output quarter-wave open line is the center frequency f of the input signal0The length and the width of the output quarter-wavelength open line 5 are effectively reduced, a short circuit point is formed at the parallel point for the input signal, the output signal is open, on one hand, the circuit size is reduced, and on the other hand, the influence of a high-order mode caused by too large circuit width on the circuit characteristic is avoided.
The direct current bias circuit 6 comprises a quarter-wavelength high-resistance line 62 and a quarter-wavelength open line 63, the quarter-wavelength high-resistance line 62 is bent and closely connected with the fifth main transmission line 61, the width of the circuit is effectively reduced, and through the two sections of transmission lines and the wavelength relation, an open point on 125GHz is formed at an access point of the direct current bias circuit 6, so that the direct current bias circuit 6 cannot form impedance loading on output signals, and cannot generate impedance traction on the output signals.
Fig. 2 shows simulation results of a circuit corresponding to the D-band frequency doubler. The abscissa of the graph is the input frequency and the ordinate is the output power. The input power adopted by simulation is 18dBm, and as can be seen from the figure, the output frequency can cover 120-130 GHz, the output power is greater than 10.5dBm, and the corresponding frequency doubling efficiency is greater than 18%.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (4)
1. A terahertz D-band planar frequency doubler is characterized by comprising: the circuit comprises an input low-pass filter (1), an input matching circuit (2), a parallel Schottky diode pair (3), an output matching circuit (4), an output quarter-wavelength open circuit (5), a direct current bias circuit (6) and a substrate (7); the input low-pass filter (1), the input matching circuit (2), the parallel Schottky diode pair (3), the output matching circuit (4), the output quarter-wavelength open circuit (5) and the direct current bias circuit (6) are all arranged on the substrate (7); the input matching circuit (2) comprises: a first main transmission line (21), a second main transmission line (22); the parallel Schottky diode pair (3) comprises: a first Schottky diode (31) and a second Schottky diode (32); the output matching circuit (4) comprises: a third main transmission line (41), a fourth main transmission line (42); the direct current bias circuit (6) is used for providing direct current bias for the parallel Schottky diode pair (3); the DC bias circuit (6) comprises: a fifth main transmission line (61), a quarter-wave high impedance line (62), a quarter-wave open line (63); the terahertz D-band planar frequency doubler comprises a first main transmission line (21), a second main transmission line (22), a third main transmission line (41), a fourth main transmission line (42) and a fifth main transmission line (61), which are sequentially connected in series end to end, wherein the output end of an input low-pass filter (1) is connected with the non-series end of the first main transmission line (21), and the input end of the input low-pass filter (1) is used as the radio-frequency input end of the terahertz D-band planar frequency doubler; the first Schottky diode (31) and the second Schottky diode (32) are connected in parallel, the anode of the first Schottky diode (31) is grounded, the cathode of the first Schottky diode is connected to the third main transmission line (41), and the anode of the second Schottky diode (32) is grounded, and the cathode of the second Schottky diode is connected to the third main transmission line (41); the middle point of the output quarter-wave open line (5) is connected to the common point of the third main transmission line (41) and the fourth main transmission line (42) in series, and the output quarter-wave open line (5) is arranged on two sides of the fourth main transmission line (42) in axial symmetry relative to the fourth main transmission line (42); the quarter-wave open line (63) is connected with the fifth main transmission line (61) through a quarter-wave high-impedance line (62).
2. The terahertz D-band planar frequency doubler according to claim 1, wherein an input fundamental wave signal reaches a parallel schottky diode pair (3) after passing through an input low pass filter (1) and an input matching circuit (2), a higher harmonic signal including a second harmonic is generated by nonlinearity of a diode, the fundamental wave signal and a third harmonic signal are filtered after passing through an output matching circuit (4) and an output quarter-wavelength open circuit (5), the output signal is only a second harmonic signal, and the second harmonic signal is output after passing through a dc bias circuit (6), thereby realizing second-order frequency doubling.
3. The terahertz D-band planar frequency doubler according to claim 1, wherein the input low-pass filter (1) adopts a first-order compact microstrip resonance unit.
4. The thz D-band planar frequency doubler according to claim 1, wherein the output quarter-wave open line (5) is a quarter-wave at the input band center frequency.
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