CN113078044B - Preparation method of dielectric material and semiconductor structure - Google Patents
Preparation method of dielectric material and semiconductor structure Download PDFInfo
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- CN113078044B CN113078044B CN202110320623.7A CN202110320623A CN113078044B CN 113078044 B CN113078044 B CN 113078044B CN 202110320623 A CN202110320623 A CN 202110320623A CN 113078044 B CN113078044 B CN 113078044B
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- 239000003989 dielectric material Substances 0.000 title claims abstract description 137
- 239000004065 semiconductor Substances 0.000 title claims abstract description 15
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 87
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 70
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 69
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 240
- 238000000034 method Methods 0.000 claims description 71
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 12
- 238000000231 atomic layer deposition Methods 0.000 claims description 11
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 8
- 238000005240 physical vapour deposition Methods 0.000 claims description 7
- 239000002356 single layer Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 5
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 4
- 238000005566 electron beam evaporation Methods 0.000 claims description 4
- 239000002390 adhesive tape Substances 0.000 claims description 3
- 238000011978 dissolution method Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- 230000008569 process Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 239000010703 silicon Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000005411 Van der Waals force Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- -1 transition metal chalcogenide Chemical class 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
The invention provides a preparation method of a dielectric material and a semiconductor structure, wherein the preparation method comprises the following steps: providing a substrate, and sequentially forming a graphene layer, at least one dielectric material layer and a supporting layer; mechanically stripping a laminated structure consisting of a dielectric material layer and a supporting layer from the surface of the graphene layer; transferring the laminated structure to a target substrate, wherein the dielectric material is in contact with the surface of the target substrate; the support layer is removed and the layer of dielectric material is left on the surface of the target substrate. According to the invention, the dielectric material layer is manufactured on the graphene, and the characteristics of easy stripping of the weaker van der Waals contact between the graphene and the dielectric material layer are utilized to realize the stripping of any dielectric material layer, and the stripping is transferred to any target substrate to form the van der Waals contact, so that the applicable range of the dielectric material layer is expanded, the damage of the dielectric material layer to the target substrate material in the manufacturing process is reduced, the device performance is improved, and the manufacturing cost of the dielectric material layer is reduced.
Description
Technical Field
The invention belongs to the technical field of semiconductor integrated circuits, and relates to a preparation method of a dielectric material and a semiconductor structure.
Background
Dielectric material fabrication is an indispensable processing technique in the semiconductor field. However, the method of forming a dielectric material on a substrate by electron beam evaporation or Plasma Enhanced Atomic Layer Deposition (PEALD) generally has a strict requirement on the substrate property, and may damage the structure of the substrate material to some extent, so that the performance of the substrate material is affected, especially the two-dimensional material with atomic-scale thickness is affected the most.
Therefore, how to provide a preparation method of a dielectric material and a semiconductor structure to reduce the damage to a substrate and improve the electrical performance of a device is an important technical problem to be solved by those skilled in the art.
Disclosure of Invention
In view of the above drawbacks of the prior art, an object of the present invention is to provide a method for preparing a dielectric material and a semiconductor structure, which are used for solving the problem that the substrate is easily damaged during the preparation process of the dielectric material in the prior art, resulting in the reduction of the electrical performance of a device.
To achieve the above and other related objects, the present invention provides a method for preparing a dielectric material, comprising the steps of:
Providing a substrate;
forming a graphene layer on the upper surface of the substrate;
forming at least one dielectric material layer on the upper surface of the graphene layer;
Forming a supporting layer on the upper surface of the graphene layer, wherein the supporting layer covers the dielectric material layer;
mechanically stripping the laminated structure consisting of the dielectric material layer and the supporting layer from the surface of the graphene layer;
Transferring the laminated structure to a target substrate, wherein the dielectric material layer is in contact with the surface of the target substrate;
And removing the supporting layer and leaving the dielectric material layer on the surface of the target substrate.
Alternatively, the substrate is a rigid substrate.
Optionally, the substrate includes at least one of a germanium layer, a silicon carbide layer, a silicon germanium layer, a silicon layer, a copper layer, a nickel layer, a ceramic layer, and a glass layer.
Optionally, the graphene layer includes one or more of single-layer graphene and multi-layer graphene.
Optionally, the method for forming the dielectric material layer includes at least one of a chemical vapor deposition method, a physical vapor deposition method, and an atomic layer deposition method.
Alternatively, the chemical vapor deposition method includes a metal organic chemical vapor deposition method, the physical vapor deposition method includes an electron beam evaporation method, and the atomic layer deposition method includes a plasma enhanced atomic layer deposition method.
Optionally, the dielectric material layer includes at least one of silicon dioxide and a high-K dielectric, and the dielectric constant K of the high-K dielectric is greater than 3.9.
Optionally, forming the support layer includes the steps of:
Applying an organic solution to the upper surface of the dielectric material layer and the graphene layer;
drying the organic solution to obtain the support layer.
Optionally, the organic solution comprises a photoresist solution.
Optionally, forming the support layer includes the steps of:
Providing a flexible film layer to cover the dielectric material layer;
And softening the flexible film layer by heating and pressurizing and tightly attaching the dielectric material layer and the upper surface of the graphene layer to form the supporting layer.
Optionally, the back of the support layer is adhered by using an adhesive tape to mechanically peel the laminated structure from the surface of the graphene layer, or the support layer is directly lifted to mechanically peel the laminated structure from the surface of the graphene layer.
Optionally, the support layer is removed by a dissolution method.
Optionally, the support layer is removed by heating the support layer to reduce adhesion between the support layer and the layer of dielectric material, and by mechanical stripping.
Optionally, the contact of the layer of dielectric material with the target substrate surface comprises van der waals contact.
Optionally, the target substrate includes at least one of a two-dimensional material layer and a three-dimensional material layer.
The invention also provides a semiconductor structure comprising:
A target substrate;
At least one dielectric material layer on the target substrate, wherein the dielectric material layer is transferred onto the target substrate by the method of preparing a dielectric material as described in any one of the above.
As described above, the preparation method of the dielectric material and the semiconductor structure realize the stripping of any dielectric material by manufacturing the dielectric material on the graphene and utilizing the characteristic that the weak van der Waals contact between the graphene and the dielectric material is easy to strip; the stripped dielectric material is transferred to any target substrate to form Van der Waals contact, so that the applicable range of the dielectric material is expanded, meanwhile, the damage of the dielectric material manufacturing process to the target substrate material is reduced by the transfer process, the contact of the dielectric material with better performance is realized, and the process conditions required by the manufacturing process are reduced, so that the manufacturing cost of the dielectric material is reduced.
Drawings
Fig. 1 shows a process flow diagram of a method for preparing a dielectric material according to the present invention.
FIG. 2 is a schematic diagram of a substrate provided for the method of preparing a dielectric material according to the present invention.
Fig. 3 is a schematic diagram illustrating a method for preparing a dielectric material according to the present invention to form a graphene layer on an upper surface of a substrate.
Fig. 4 is a schematic diagram illustrating a method for preparing a dielectric material according to the present invention to form a dielectric material layer on an upper surface of the graphene layer.
Fig. 5 shows a plan layout of the dielectric material layer on the graphene layer.
Fig. 6 is a schematic diagram illustrating a method for preparing a dielectric material according to the present invention to form a supporting layer on an upper surface of the graphene layer.
Fig. 7 is a schematic diagram showing a method for preparing a dielectric material according to the present invention, in which a stacked structure composed of the dielectric material layer and the supporting layer is mechanically peeled from the surface of the graphene layer.
Fig. 8 is a schematic diagram showing a method for preparing a dielectric material according to the present invention for transferring the laminated structure to a target substrate.
Fig. 9 is a schematic diagram showing a method for preparing a dielectric material according to the present invention, in which the supporting layer is removed and the dielectric material layer is left on the surface of the target substrate.
Description of element reference numerals
S1 to S7 steps
1. Substrate
2. Graphene layer
3. Dielectric material layer
4. Support layer
5. Target substrate
Detailed Description
Other advantages and effects of the present invention will become apparent to those skilled in the art from the following disclosure, which describes the embodiments of the present invention with reference to specific examples. The invention may be practiced or carried out in other embodiments that depart from the specific details, and the details of the present description may be modified or varied from the spirit and scope of the present invention.
Please refer to fig. 1 to 9. It should be noted that, the illustrations provided in the present embodiment merely illustrate the basic concept of the present invention by way of illustration, and only the components related to the present invention are shown in the drawings and are not drawn according to the number, shape and size of the components in actual implementation, and the form, number and proportion of the components in actual implementation may be arbitrarily changed, and the layout of the components may be more complex.
Example 1
In this embodiment, referring to fig. 1, a process flow chart of the method is shown, which includes the following steps:
S1: providing a substrate;
S2: forming a graphene layer on the upper surface of the substrate;
s3: forming at least one dielectric material layer on the upper surface of the graphene layer;
S4: forming a supporting layer on the upper surface of the graphene layer, wherein the supporting layer covers the dielectric material layer;
S5: mechanically stripping the laminated structure consisting of the dielectric material layer and the supporting layer from the surface of the graphene layer;
S6: transferring the laminated structure to a target substrate, wherein the dielectric material layer is in contact with the surface of the target substrate;
S7: and removing the supporting layer and leaving the dielectric material layer on the surface of the target substrate.
Referring to fig. 2, step S1 is performed: a substrate 1 is provided.
As an example, the substrate 1 is a rigid substrate to provide good support for the layers of material to be subsequently manufactured. The substrate 1 includes, but is not limited to, at least one of a germanium layer, a silicon carbide layer, a germanium-silicon layer, a copper layer, a nickel layer, a ceramic layer, and a glass layer, and for example, the substrate 1 may be a single germanium layer or silicon carbide layer, or may be a silicon layer/copper layer stack, a silicon layer/nickel layer stack, a ceramic layer/copper layer stack, a ceramic layer/nickel layer stack, a glass layer/copper layer stack, a glass layer/nickel layer stack, a silicon layer/germanium-silicon layer/germanium layer stack, a silicon layer/germanium layer stack, or the like.
Referring to fig. 3, step S2 is then performed: and forming a graphene layer 2 on the upper surface of the substrate 1.
As an example, the graphene layer 2 may be formed on the upper surface of the substrate 1 using a chemical vapor deposition method, an arc method, or other suitable method, and the graphene layer 2 includes, but is not limited to, one or more of single-layer graphene and multi-layer graphene.
In this embodiment, a germanium substrate is preferably used, and a chemical vapor deposition method is used to grow a single-layer graphene on the surface of the germanium substrate.
It should be noted that the multi-layer graphene may have different numbers of layers of graphene in different areas, the surface is rough, the dielectric material layer prepared later also has a relatively rough lower surface, and the single-layer graphene has a very smooth surface, so that the dielectric material layer prepared on the surface of the single-layer graphene also has a smoother lower surface, and the graphene is not easy to remain on the surface of the dielectric material layer in the subsequent stripping process due to the uniform number of layers of the single-layer graphene.
In another embodiment, the graphene layer 2 may also be directly grown by using a silicon carbide substrate, where carbon on the surface of the silicon carbide substrate is precipitated and recombined to obtain the graphene layer 2 in the heating process.
Referring to fig. 4 again, step S3 is performed: at least one dielectric material layer 3 is formed on the upper surface of the graphene layer 2 by at least one of Chemical Vapor Deposition (CVD), physical Vapor Deposition (PVD), atomic Layer Deposition (ALD) or other suitable method. The chemical vapor deposition method includes, but is not limited to, metal Organic Chemical Vapor Deposition (MOCVD), the physical vapor deposition method includes electron beam evaporation, and the atomic layer deposition method includes Plasma Enhanced Atomic Layer Deposition (PEALD).
As an example, the dielectric material layer 3 includes at least one of silicon dioxide and a high K dielectric having a dielectric constant K greater than 3.9, and may be, for example, silicon nitride, aluminum oxide, titanium oxide, hafnium oxide, zirconium oxide, or the like. The dielectric material layer 3 may be used as a gate dielectric layer or other functional layer.
As an example, an array of dielectric material layers may be obtained by depositing a dielectric material on the surface of the graphene layer 2 and patterning the dielectric material.
In another embodiment, a photoresist layer may be formed on the surface of the graphene layer 2, and the photoresist layer may be patterned to obtain a plurality of openings exposing the graphene layer 2, then a dielectric material may be deposited in the openings and on the surface of the photoresist layer, and the photoresist layer may be stripped to obtain a dielectric material layer array.
As an example, please refer to fig. 5, which shows a plan layout of the dielectric material layer 3 on the graphene layer 2.
It should be noted that the specific arrangement rule of the dielectric material layer array may be adjusted according to needs, and is not limited to the example presented in fig. 5.
Referring to fig. 6 again, step S4 is performed: and forming a supporting layer 4 on the upper surface of the graphene layer 2, wherein the supporting layer 4 covers the dielectric material layer 3.
As an example, the support layer 5 may be obtained by applying an organic solution to the upper surfaces of the dielectric material layer 3 and the graphene layer 2 and drying the organic solution. The organic solution includes, but is not limited to, a photoresist solution, such as a PMMA (polymethyl methacrylate) photoresist solution. Methods of applying the organic solution include, but are not limited to, spin coating.
In another embodiment, the support layer 4 may also be formed by providing a molded flexible film layer to cover the dielectric material layer 3, and heating and pressurizing the flexible film layer to soften and adhere to the dielectric material layer 3 and the upper surface of the graphene layer 2.
Referring to fig. 7 again, step S5 is performed: and mechanically stripping the laminated structure consisting of the dielectric material layer 3 and the supporting layer 4 from the surface of the graphene layer 2.
Specifically, since the graphene layer 2 has no or only a very small number of dangling bonds, the dielectric material layer 3 is mainly in contact with the graphene layer 2 by weak van der waals force, and thus the laminated structure is easily peeled off from the surface of the graphene layer 2 on the surface of the substrate 1.
As an example, an adhesive tape may be used to adhere the back surface of the support layer 4 to mechanically peel the laminated structure from the surface of the graphene layer 2, or the support layer 4 may be lifted directly to mechanically peel the laminated structure from the surface of the graphene layer 2.
Referring to fig. 8 again, step S6 is performed: transferring the laminated structure to a target substrate 5 and attaching the laminated structure to the target substrate 5, wherein the dielectric material layer 3 is in contact with the surface of the target substrate 5.
As an example, the target substrate 5 includes at least one of a two-dimensional material layer including but not limited to graphene, transition metal chalcogenide, black phosphorus, etc. of an atomic-scale thickness, and a three-dimensional material layer including but not limited to a three-dimensional semiconductor substrate of silicon, germanium-silicon, silicon-on-insulator, germanium-silicon-on-insulator, III-V compound, perovskite material, etc., in which a channel structure or other desired structure may be prepared in advance in the target substrate 5.
Referring to fig. 9 again, step S7 is performed: the support layer 4 is removed and the layer of dielectric material 3 is left on the surface of the target substrate 5.
As an example, when the support layer 4 is thin, or is easily torn, or when the bonding force of the support layer 4 to the target substrate 5 is still greater than the bonding force of the support layer 4 to the dielectric material layer 3 after a certain treatment, the support layer 4 may be removed by a dissolution method. When the supporting layer 4 is thicker, for example, greater than several hundred micrometers, or when the supporting layer 4 is not easily torn, or when the bonding force between the supporting layer 4 and the target substrate 5 is smaller than the bonding force between the supporting layer 4 and the dielectric material layer 3, the supporting layer 4 may be removed by a mechanical peeling method, and before the supporting layer 4 is mechanically peeled, the supporting layer may be heated to reduce the adhesion force between the supporting layer and the dielectric material layer, so that the supporting layer 4 is more easily peeled.
The dielectric material layer 3 prepared on the graphene layer 2 is transferred to the surface of the target substrate 5, and the contact between the dielectric material layer 3 and the surface of the target substrate 5 is van der waals contact or mainly van der waals contact, so that the problem that raw materials react with the target substrate when the dielectric material layer 3 is directly prepared on the target substrate 5 is avoided, and the damage to the target substrate 5 caused by high temperature conditions required when the dielectric material layer 3 is directly prepared on the target substrate 5 is avoided, thereby maintaining the intrinsic property of the material of the target substrate 5, being beneficial to improving the electrical property of a manufactured device, and being capable of expanding the applicable range of the dielectric material layer 3. Meanwhile, the process window for manufacturing the dielectric material layer 3 can be enlarged by manufacturing the dielectric material layer 3 on the graphene layer 2, and the processing period is obviously lower than the time required by the conventional process, so that the manufacturing cost of the dielectric material layer 3 is reduced.
Example two
In this embodiment, a semiconductor structure is provided, please refer to fig. 9, which is a schematic cross-sectional structure of the semiconductor structure, and includes a target substrate 5 and at least one dielectric material layer 3 disposed on the target substrate 5, wherein the dielectric material layer 3 is transferred onto the target substrate 5 by the method for preparing a dielectric material as described in the first embodiment. The specific form of the dielectric material layer 3 can be adjusted as required.
In summary, according to the preparation method of the dielectric material and the semiconductor structure of the invention, the dielectric material is deposited on the graphene in advance, and the dielectric material is easily peeled off from the graphene by weak van der Waals force between the graphene and the dielectric material. And transferring the stripped dielectric material to a target substrate through a transfer process, and removing the supporting layer to realize the manufacture of the dielectric material without damaging the target substrate, wherein the contact between the target substrate and the dielectric material is van der Waals contact. The method can conveniently manufacture the dielectric material on any target substrate, greatly expands the applicable range of the dielectric material, ensures that the processing period is obviously lower than the time required by the conventional process, and greatly reduces the process cost. By realizing van der Waals contact between the target substrate and the dielectric material, the intrinsic properties of the material can be maintained, and the electrical performance of the manufactured device can be improved. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The above embodiments are merely illustrative of the principles of the present invention and its effectiveness, and are not intended to limit the invention. Modifications and variations may be made to the above-described embodiments by those skilled in the art without departing from the spirit and scope of the invention. Accordingly, it is intended that all equivalent modifications and variations of the invention be covered by the claims, which are within the ordinary skill of the art, be within the spirit and scope of the present disclosure.
Claims (15)
1. A method of preparing a dielectric material, comprising the steps of:
Providing a substrate;
forming a single-layer graphene layer on the upper surface of the substrate;
forming at least one dielectric material layer on the upper surface of the graphene layer;
Forming a supporting layer on the upper surface of the graphene layer, wherein the supporting layer covers the dielectric material layer;
mechanically stripping the laminated structure consisting of the dielectric material layer and the supporting layer from the surface of the graphene layer;
Transferring the laminated structure to a target substrate, wherein the dielectric material layer is in contact with the surface of the target substrate;
And removing the supporting layer and leaving the dielectric material layer on the surface of the target substrate.
2. The method of preparing a dielectric material according to claim 1, wherein: the substrate is a rigid substrate.
3. The method of preparing a dielectric material according to claim 1, wherein: the substrate comprises at least one of a germanium layer, a silicon carbide layer, a germanium-silicon layer, a copper layer, a nickel layer, a ceramic layer and a glass layer.
4. The method of preparing a dielectric material according to claim 1, wherein: the method for forming the dielectric material layer comprises at least one of a chemical vapor deposition method, a physical vapor deposition method and an atomic layer deposition method.
5. The method of producing a dielectric material according to claim 4, wherein: the chemical vapor deposition method comprises a metal organic chemical vapor deposition method, the physical vapor deposition method comprises an electron beam evaporation method, and the atomic layer deposition method comprises a plasma enhanced atomic layer deposition method.
6. The method of preparing a dielectric material according to claim 1, wherein: the dielectric material layer comprises at least one of silicon dioxide and a high-K dielectric, and the dielectric constant K of the high-K dielectric is larger than 3.9.
7. The method of preparing a dielectric material of claim 1, wherein forming the support layer comprises the steps of:
Applying an organic solution to the upper surface of the dielectric material layer and the graphene layer;
drying the organic solution to obtain the support layer.
8. The method of producing a dielectric material according to claim 7, wherein: the organic solution includes a photoresist solution.
9. The method of preparing a dielectric material of claim 1, wherein forming the support layer comprises the steps of:
Providing a flexible film layer to cover the dielectric material layer;
And softening the flexible film layer by heating and pressurizing and tightly attaching the dielectric material layer and the upper surface of the graphene layer to form the supporting layer.
10. The method of preparing a dielectric material according to claim 1, wherein: and adhering the back surface of the support layer by using an adhesive tape to mechanically peel the laminated structure from the surface of the graphene layer, or directly lifting the support layer to mechanically peel the laminated structure from the surface of the graphene layer.
11. The method of preparing a dielectric material according to claim 1, wherein: the support layer is removed by a dissolution method.
12. The method of preparing a dielectric material according to claim 1, wherein: the support layer is removed by heating the support layer to reduce adhesion between the support layer and the layer of dielectric material, and by mechanical stripping.
13. The method of preparing a dielectric material according to claim 1, wherein: the contact of the layer of dielectric material with the target substrate surface comprises van der waals contact.
14. The method of preparing a dielectric material according to claim 1, wherein: the target substrate includes at least one of a two-dimensional material layer and a three-dimensional material layer.
15. A semiconductor structure, comprising:
A target substrate;
At least one layer of dielectric material on the target substrate, wherein the layer of dielectric material is transferred onto the target substrate by a method of producing a dielectric material according to any one of claims 1-14.
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| CN109841497B (en) * | 2017-11-28 | 2021-02-26 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for homoepitaxial growth of gallium nitride, gallium nitride material and application |
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| CN106298466A (en) * | 2016-09-18 | 2017-01-04 | 西安电子科技大学 | The two-dimentional transient metal chalcogenide compound transfer method of adhesive tape is released based on heat |
| CN110265356A (en) * | 2019-06-21 | 2019-09-20 | 西安电子科技大学 | Epitaxial layer of gallium nitride stripping means based on graphene |
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