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CN113067158A - Broadband electromagnetic phase-adjustable super-surface structure - Google Patents

Broadband electromagnetic phase-adjustable super-surface structure Download PDF

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CN113067158A
CN113067158A CN202110230789.XA CN202110230789A CN113067158A CN 113067158 A CN113067158 A CN 113067158A CN 202110230789 A CN202110230789 A CN 202110230789A CN 113067158 A CN113067158 A CN 113067158A
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wire frame
cross
layer
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CN113067158B (en
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郭少军
沈同圣
邹春荣
周晓松
赵德鑫
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National Defense Technology Innovation Institute PLA Academy of Military Science
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0013Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0013Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
    • H01Q15/002Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices being reconfigurable or tunable, e.g. using switches or diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/0013Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective
    • H01Q15/0026Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices said selective devices working as frequency-selective reflecting surfaces, e.g. FSS, dichroic plates, surfaces being partly transmissive and reflective said selective devices having a stacked geometry or having multiple layers

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Abstract

The application discloses a broadband electromagnetic phase-adjustable super-surface structure, wherein a metal structure layer of the structure forms a plurality of array units which are periodically arranged on the surface of a dielectric layer, each array unit comprises a closed square boundary wire frame and an electric harmonic oscillator arranged in the center of the boundary wire frame, and the electric harmonic oscillator comprises a cross frame arranged in the center of the square boundary wire frame, side lines positioned on the outer sides of free ends of the cross frame and variable capacitance diodes connected between the free ends of the cross frame and the corresponding side lines; wherein the side length of the boundary wire frame is 31-39 mm; the sideline length of electric harmonic oscillator is 9 ~ 11mm, and the linewidth is 0.5 ~ 1mm, and the linewidth of cross is 1 ~ 1.5mm, and length is 10 ~ 12mm, and varactor's inductance is less than or equal to 0.4nH, and the initial capacitance value is less than or equal to 0.5 pF. The polarization-independent electromagnetic wave phase wavefront can be adjusted by adopting a symmetrical structure, the maximum range of the polarization-independent electromagnetic wave phase wavefront can be 4.8-6.2GHz, and the adjustable phase can exceed 320 degrees.

Description

Broadband electromagnetic phase-adjustable super-surface structure
Technical Field
The application relates to the technical field of electromagnetic super-structure surfaces (super surfaces), in particular to a broadband electromagnetic phase-adjustable super-surface structure.
Background
As the complexity of electromagnetic environments increases, the targeted application of electromagnetic meta-surfaces is more demanding. Under the influence of the material processing technology and the material characteristics, generally, the electromagnetic super-surface has a fixed structure once being processed, and the electromagnetic characteristic performance is relatively fixed.
In order to cope with the diversity of electromagnetic environments in reality, an adaptive electromagnetic super surface appears, however, due to the material characteristics and the like, the electromagnetic super surface of the broadband phase-adjustable material is difficult to realize.
Disclosure of Invention
The application discloses a broadband electromagnetic phase-adjustable super-surface structure which is used for achieving polarization-independent broadband wave band phase-adjustable performance.
According to the embodiment of the application, the broadband electromagnetic phase adjustable super-surface structure comprises at least three layers of structures, wherein the top layer is a metal structure layer, the middle layer is a dielectric layer, and the back layer is a metal reflecting layer; the metal structure layer forms a plurality of array units which are periodically arranged on the surface of the dielectric layer, each array unit comprises a closed square boundary wire frame and an electric harmonic oscillator arranged in the center of the boundary wire frame, and each electric harmonic oscillator comprises a cross arranged in the center of the square boundary wire frame, side lines positioned on the outer sides of the free ends of the cross and a variable capacitance diode connected between each free end of the cross and the corresponding side line; wherein the side length of the boundary wire frame is 31-39 mm; the sideline length of electric harmonic oscillator is 9 ~ 11mm, and the linewidth is 0.5 ~ 1mm, and the linewidth of cross is 1 ~ 1.5mm, and length is 10 ~ 12mm, and varactor's inductance is less than or equal to 0.4nH, and the initial capacitance value is less than or equal to 0.5 pF.
In other examples, the border wire frame has a side length of 37 mm; the sideline length of electric harmonic oscillator is 11mm, and the linewidth is 0.5mm, and the linewidth of cross is 1.5mm, and length is 12mm, varactor's inductance less than or equal to 0.1nH, and the initial capacitance value is less than or equal to 0.3 pF.
In other examples, the border wire frame has a line width of 1-5 mm.
In other examples, the dielectric layer has a thickness of 0.254mm, a dielectric constant of 2.2, and a loss tangent of 0.009.
In some other examples, the varactor is SMV2019 or SMV 2020.
In other examples, the distance between the edge line and the cross free end port is 0.6 mm.
In other examples, the thickness of the metal structure layer is 0.017 mm.
In other examples, the array units are continuously arranged on the medium layer, and the array units are arranged on the medium layer with a period of 31-39 mm, preferably 37 mm.
In other examples, each array element is symmetrical along an x-axis and a y-axis that passes through the center of the array element.
In other examples, the electromagnetic wave band with the adjustable phase range exceeding 320 degrees of the super-surface structure is 4.8-6.2 GHz.
Compared with the prior art, the application can produce the following beneficial effects:
the polarization-independent electromagnetic wave phase wavefront can be adjusted by adopting a symmetrical structure, the maximum range of the polarization-independent electromagnetic wave phase wavefront can be 4.8-6.2GHz, and the adjustable phase can exceed 320 degrees.
The application adopts the 0-20V bias voltage to uniformly regulate and control through the variable capacitance diode, simplifies the circuit and enhances the engineering realizability of the super-surface structure.
According to the method, the high reflection characteristic of the incident electromagnetic wave can be realized by covering the metal layer on the back surface of the structure, the wave front adjustment of the incident electromagnetic wave in an adjustable frequency band can be realized by combining the adjustment of 0-20V external bias voltage, and a feasible super-surface structure can be provided for virtual shaping and active stealth.
Further features of the present application and advantages thereof will become apparent from the following detailed description of exemplary embodiments thereof, which is to be read in connection with the accompanying drawings.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application.
In the drawings:
FIG. 1 is a schematic cross-sectional view of a broadband electromagnetic phase tunable super-surface structure according to an embodiment of the present application;
FIG. 2 is a schematic structural diagram of a broadband electromagnetic phase tunable super-surface structure metal structure layer according to an embodiment of the present disclosure;
FIG. 3 is a schematic diagram of a broadband electromagnetic phase tunable super-surface structure equivalent circuit according to an embodiment of the present application;
fig. 4 shows the capacitance C of different varactors as a function of the voltage V.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the application, its application, or uses.
As shown in fig. 1, according to an embodiment of the present application, a broadband electromagnetic phase tunable super-surface structure is disclosed, which includes at least three layers, wherein a top layer is a metal structure layer 10, a middle layer is a dielectric layer 20, and a back layer is a metal reflection layer 30.
The metal structure layer 10 forms a plurality of array units arranged periodically on the surface of the dielectric layer 20. Fig. 2 shows the structure of one array unit 100, and as shown in fig. 2, each array unit 100 has a symmetrical structure along the x-axis and the y-axis passing through the center of the unit, and includes a square boundary wire frame 101 and an electric resonator arranged at the center of the boundary wire frame 101. The electric resonator includes a cross 102 disposed at the center of a square boundary wire frame 101, stubs 103 (borderlines) located outside the respective free ends of the cross 102, and varactor diodes 104 connected between the respective free ends of the cross 102 and the stubs corresponding thereto. As can be seen from fig. 2, each of the electrical resonators includes four short lines 103 and four corresponding varactors 104.
It is understood that the border wire frame 101, the cross 102, and the short wire 103 are all made of metal material, such as metal wire, metal tape, etc., and are formed on the dielectric layer 20 by using a Printed Circuit Board (PCB) manufacturing process.
According to the preferred embodiment of the present application, the thickness h of the metal structure layer 10 is 0.017 mm. The dielectric layer 20 can be, for example, Rogers RT5880(lossy) PCB dielectric material with a thickness of 0.254mm, a dielectric constant of 2.2 and a loss tangent of 0.009.
In the present application, the array units 100 are continuously disposed on the dielectric layer 20, and the period p of the array units 100 disposed on the dielectric layer 20 is 31-39 mm, preferably 37 mm. The plasma frequency forbidden band edge line is adjusted and optimized, the line width of the square boundary line frame 101 is set to be 1-5mm, the optimal width is 1mm, the side length covers the whole periodic boundary, namely the side length L of the square boundary line frame 101 is 31-39 mm, and the optimal width is 37 mm.
Analysis shows that the width change of the boundary wire frame 101 of the super-surface structure hardly affects the frequency range of the adjustable phase, for example, the line width is in the range of 1-5mm, and the frequency band range of the electromagnetic wave with the phase adjustable range exceeding 320 degrees is 4.8-6.2 GHz.
In the process that the side length L of the boundary wire frame 101 is reduced from 39mm to 9mm, it can be found from the electromagnetic phase regulation curve graph that when the value L is 39-31mm, the phase regulation capability is basically unchanged, and the adjustable bandwidth is 4.84-6.2 GHz.
When the side length L of the boundary wire frame 101 is 25mm, the electromagnetic phase regulation and control capability of the super-surface unit is greatly disturbed, the adjustable phase range is narrowed in the low frequency band of the original adjustable frequency band range, the minimum adjustable phase range is-50 degrees, the self-adaptive regulation and control requirements cannot be met, and the phase adjustable range frequency band is reduced to 5.32-6.22 GHz. The reason is that when L is reduced to a certain extent, port capacitance is generated due to a distance space existing between the metal linear array ports, and when a capacitance value is within a certain range, a phase of the super surface is greatly influenced. Because different wavelengths of incident electromagnetic waves can generate different induction capacitances, the influence of the capacitance is uncertain, and in order to avoid the influence of the uncertain capacitance, a closed boundary wire frame is adopted in the method.
When the side length L of the boundary wire frame 101 is continuously reduced, for example, the value is about 19mm, the high-frequency electromagnetic regulation and control capability of the super-surface unit is inhibited, and the 320-degree phase-adjustable capability range is reduced to 4.85-5.68 GHz.
When the side length L of the boundary wire frame 101 is continuously reduced to about 9mm, the capacitance between the linear array ports becomes negligible due to the increase of the distance, and at this time, the electromagnetic phase regulation and control capability of the super-surface unit mainly depends on the influence of the central electric harmonic oscillator.
In the present application, the center cross 102 of the electric harmonic oscillator is combined with the short linear array 103 and the varactor diode 104 to form the electric harmonic oscillator.
It was found by analysis that the center of the tunable frequency shifts towards higher frequencies as the length of the stub 103 is gradually shortened. When the length of the stub 103 is shortened to 7mm or less, the phase adjustable range of the low frequency band is compressed, and when the length of the stub 103 is shortened to 4mm, the adjustable frequency is shifted to the high frequency band and the band width is compressed. The details are shown in the following table:
Figure BDA0002957826700000051
the reason why the frequency center shifts to a high frequency and the frequency band is compressed is related to an equivalent circuit of the electric resonator, such as an equivalent circuit diagram of the array unit 100 (super surface unit) shown in fig. 3, and the resonance frequency ω satisfies the following formula:
Figure BDA0002957826700000061
according to the above formula, since the equivalent inductance and the equivalent capacitance value become small at the same time when the length of the stub 103 is shortened, the resonance frequency ω shifts to a high frequency.
Meanwhile, although there is a certain effect of adjusting the tunable center frequency by adjusting the length of the short line 103 of the electric resonator, the total tunable band width is sacrificed to some extent in the high frequency region, and the relationship between the tunable frequency width and the center frequency needs to be balanced when performing the band tuning.
According to the above formula, as the width of the short line 103 increases, the equivalent inductance and the equivalent capacitance increase accordingly, and the frequency center should be shifted to a low frequency. For example, the length of the short line 103 is fixed to be 11mm, the width of the short line changes from 0.5mm to 2.0mm, the adjustable center frequency of the super-surface structure moves to a low frequency along with the increase of the width, and the low-frequency adjustable phase is influenced at the same time, and the result shows that the adjustable phase is greatly influenced by the side line width of the electric harmonic oscillator, and can be expressed as:
Figure BDA0002957826700000062
where Δ Φ is the adjustable phase range, and L is the equivalent inductance of the electric resonator side line (short line 103).
Therefore, according to the preferred embodiment of the present application, the short wire 103 has a line width w1 of 0.5 to 1mm, preferably 0.5mm, and a length of 11 to 9mm, preferably 11 mm.
The size of the cross 102 of the electrical harmonic oscillator affects the location of the center of the resonant frequency. Analysis has found that scaling the length of cross 102 (i.e., the length of the horizontal or vertical wires) while maintaining the uniformity of the edge (stub 103) width and cross size, with the distance between edge 103 and the free end port of cross 102 fixed at 0.6mm (i.e., the size length of varactor 104), yields the corresponding results as shown in the following table:
Figure BDA0002957826700000071
the result shows that when the length of the electric harmonic oscillator is reduced and the relative length and the relative distance of the side line are adjusted, the center of the adjustable frequency can move towards high frequency, because the structural size is reduced and the adjustable frequency and the high-frequency band electromagnetic wave form resonance, the frequency can be moved, but because the wavelength is shortened, the same capacitance change cannot keep an adjustable electromagnetic wave interval with enough width, and the phase regulation and control capability is correspondingly influenced. When the length L of the cross 102 is as low as 7mm, dispersion curves fluctuate irregularly in the adjustable interval, which may cause trouble in adaptive adjustment.
In addition, the relative change of the length of the cross 102 and the length of the short line 103 will shift the center of the adjustable frequency, and the line width is reduced while the length of the cross is maintained, which will also affect the adjustable frequency and the adjustable phase amplitude. The results show that the reduction in the linewidth of the cross 102 shifts the tunable frequency center to lower frequencies, but the tunable phase capability becomes weaker.
Therefore, according to the preferred embodiment of the present application, the cross 102 has a line width w of 1 to 1.5mm, preferably 1.5mm, and a length of 10 to 12mm, preferably 12 mm.
In the application, a space of 0.6mm is reserved between each short wire 103 and the end face of the free end of the cross 102 and is used for arranging the varactor diode 104. The varactor 104 may be selected, for example, as SMV2019 LB. The four varactors 104 are controlled by the same bias voltage. The bias circuit is adjustable, for example between 0-20V.
Analysis shows that for the super-surface unit (array unit 100) with determined structural parameters, the capacitance C of the varactor 104 changes to realize the phase control of the electromagnetic frequency, and the inductance L and the resistance R may also cause the frequency center to move.
For the super-surface unit with determined structural parameters, the inductance L of the variable capacitance diode 104 is 1.2 nH-0.1 nH, and the result shows that: the larger the inductance, the lower the frequency of the adjustable center frequency. For example, according to the tunable frequency interval phase dispersion map when L is 1.2nH, the phase tunable range is less than 280 degrees in the low frequency region, and it is difficult to satisfy the adaptive phase control requirement. And the dispersion diagram of the adjustable frequency interval when L is 0.1nH shows that the phase adjustable range is more than 320 degrees in the whole adjustable frequency interval, and the self-adaptive phase regulation and control requirement can be met. From the phase dispersion map when L takes different values, it is found that the larger L, the poorer the low-frequency phase adjustability is. Therefore, in the present application, the inductance of the varactor 104 is less than or equal to 0.4nH, and preferably less than or equal to 0.1nH, so as to reduce the attenuation of the phase adjustment capability caused by the equivalent inductance.
The resistance R of the varactor will have an effect on the phase-tunable frequency of the super-surface. The inductance L of the fixed varactor 104 is 0.1nH, and the resistance R varies from 0.1 to 8.0 omega. The results show that the change in resistance R has negligible effect on the tunable frequency phase dispersion.
Structural parameters of the super-surface unit largely determine an adjustable frequency interval, and a required adjustable frequency center can be realized by selecting a proper size structure, but the size of a frequency band is difficult to control. Due to the diversity of varactors, the selection of a suitable varactor device is a key element in achieving the super-surface target characteristics.
Based on ADS fitting and device parameter files, the value of C in the equivalent LRC of the varactor SMV series will vary with the voltage, the value of L, R remains stable and constant, and the capacitance C follows the variation curve in fig. 4 as a function of the voltage V. It is not difficult to find that the capacitance change ranges of the variable capacitance diodes are mutually overlapped, the larger the serial number is, the larger the initial capacitance value is, and the larger the change interval is.
And analyzing different diodes as phase adjusting devices to obtain the phase adjustable condition. The result shows that the phase-adjustable performance of the SMV2019 and the SMV2020 is strongest, the phase-adjustable capability of the varactor with larger number is obviously reduced along with the increase of the initial capacitance value, the structural phase-adjustable frequency band interval adopting the SMV2023 varactor is obviously compressed, and the phase-adjustable range is also severely limited.
The influence of the variation range of the capacitor C on the phase adjustability can be found that the variation of the capacitor C at a lower value has better effect on the phase adjustment, and the increase of the C value after reaching a certain value has very little influence on the phase adjustment. Therefore, the smaller the value of the capacitance C is, the better the fine tuning effect is, and the better the phase adjustability is. In the present application, the varactor diode 104 has a starting capacitance value of less than 0.5pF, preferably less than or equal to 0.3 pF.
The super-surface structure disclosed by the application follows the Huygens equivalent principle, the resonance of incident electromagnetic waves is realized through a high-frequency plasma frequency forbidden band and an electric harmonic oscillator, and by adopting the structure, the self-adaptive adjustment that the phase of the maximum 4.8-6.2GHz wave band exceeds 320 degrees can be realized, and an effective super-surface structure material can be provided for intelligent phase wavefront adjustment.
Meanwhile, capacitance adjustment in an equivalent circuit is realized by introducing a varactor diode, so that the resonance frequency is changed, and phase wavefront adjustment of different incident electromagnetic waves is realized.
In addition, in order to avoid the sensitivity of the super-surface structure unit to the polarization characteristic of the electromagnetic wave, the phase-adjustable characteristic irrelevant to polarization is realized by adopting an axisymmetric structure aiming at the polarization characteristic.
In addition, the center of the adjustable frequency band can be adjusted through adjusting the structural parameters.
The above embodiments are only for illustrating the technical solutions of the present application and not for limiting the same, and although the present application is described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that: modifications to the specific embodiments of the application or equivalent replacements of some of the technical features may still be made; all of which are intended to be encompassed within the scope of the claims appended hereto without departing from the spirit and scope of the present disclosure.

Claims (10)

1. A broadband electromagnetic phase adjustable super-surface structure comprises at least three layers of structures, wherein the top layer is a metal structure layer, the middle layer is a dielectric layer, and the back layer is a metal reflecting layer; the metal structure layer is characterized in that a plurality of array units which are periodically arranged are formed on the surface of the dielectric layer by the metal structure layer, each array unit comprises a closed square boundary wire frame and an electric harmonic oscillator arranged in the center of the boundary wire frame, and each electric harmonic oscillator comprises a cross arranged in the center of the square boundary wire frame, side lines positioned on the outer sides of free ends of the cross and variable capacitance diodes connected between the free ends of the cross and the corresponding side lines; wherein the side length of the boundary wire frame is 31-39 mm; the sideline length of electric harmonic oscillator is 9 ~ 11mm, and the linewidth is 0.5 ~ 1mm, and the linewidth of cross is 1 ~ 1.5mm, and length is 10 ~ 12mm, and varactor's inductance is less than or equal to 0.4nH, and the initial capacitance value is less than or equal to 0.5 pF.
2. The broadband electromagnetic phase tunable super-surface structure of claim 1, wherein the border wire frame has a side length of 37 mm; the sideline length of electric harmonic oscillator is 11mm, and the linewidth is 0.5mm, and the linewidth of cross is 1.5mm, and length is 12mm, varactor's inductance less than or equal to 0.1nH, and the initial capacitance value is less than or equal to 0.3 pF.
3. The broadband electromagnetic phase tunable subsurface structure of claim 1, wherein the line width of the boundary wire frame is 1-5 mm.
4. The broadband electromagnetic phase tunable super surface structure of claim 1, wherein the dielectric layer has a thickness of 0.254mm, a dielectric constant of 2.2 and a loss tangent of 0.009.
5. The broadband electromagnetic phase tunable super surface structure of claim 1, wherein the varactor is SMV2019 or SMV 2020.
6. The broadband electromagnetic phase tunable metasurface structure of claim 1 or 5, wherein a distance between the edge line and a cross free end port is 0.6 mm.
7. The broadband electromagnetic phase tunable super-surface structure of claim 1, wherein the thickness of the metal structure layer is 0.017 mm.
8. The broadband electromagnetic phase tunable super-surface structure according to claim 1, wherein the array units are continuously disposed on the dielectric layer, and the array units are arranged on the dielectric layer with a period of 31-39 mm, preferably 37 mm.
9. The broadband electromagnetic phase tunable meta-surface structure of claim 1, wherein each array element is symmetric along x-axis and y-axis passing through the center of the array element.
10. The broadband electromagnetic phase tunable super surface structure of any one of claims 1 to 9, wherein the frequency band of the electromagnetic wave with the phase tunable range exceeding 320 degrees is 4.8 to 6.2 GHz.
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CN113659349A (en) * 2021-08-06 2021-11-16 同济大学 A Phase Tunable Broadband Transmissive Metasurface and Metasurface Unit
CN113851853A (en) * 2021-12-01 2021-12-28 北京理工大学 A transmissive programmable metasurface for millimeter-wave beam scanning
CN113851853B (en) * 2021-12-01 2022-05-13 北京理工大学 Transmission type programmable super surface for millimeter wave beam scanning
CN115096823A (en) * 2022-06-20 2022-09-23 中国工程物理研究院激光聚变研究中心 Thin film structure detection method and device, electronic equipment and storage medium
CN115764323A (en) * 2023-01-05 2023-03-07 湖南第一师范学院 Design method, device and medium of polarization-independent metasurface with specific functions

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