CN113030803A - Magnetic sensor, method for manufacturing magnetic sensor, and electronic device - Google Patents
Magnetic sensor, method for manufacturing magnetic sensor, and electronic device Download PDFInfo
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Abstract
The invention discloses a magnetic sensor, a manufacturing method of the magnetic sensor and electronic equipment. According to the invention, through the design that one side of the magnetic resistance module, which is far away from the substrate, is covered with the metal thin film, the interference of an external magnetic field can be reduced, and the noise of the magnetic sensor is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a magnetic sensor, a preparation method of the magnetic sensor and an electronic device.
Background
Sensors are widely used in modern systems to measure or detect physical parameters such as position, motion, force, acceleration, temperature, pressure, etc. While various different types of sensors are used to measure these and other parameters, they are subject to various limitations. For example, inexpensive low-field sensors, such as those used in electronic compasses and other similar magnetic sensing applications, typically include magnetoresistive (AMR) devices based on anisotropy. The sensing cell size of such sensors is typically on the order of square millimeters in order to achieve the required sensitivity and appropriate resistance for integration with CMOS. For mobile device applications, the configuration of such AMR sensors is expensive in terms of cost, circuit board area, and power consumption. Other types of sensors, such as Magnetic Tunnel Junction (MTJ) sensors and Giant Magnetoresistive (GMR) sensors, have been used to provide sensors with smaller configurations, but such sensors have respective deficiencies, such as being less sensitive and subject to temperature changes. To solve these problems, MTJ sensors and GMR sensors have been applied to Wheatstone (Wheatstone) bridge structures to improve sensitivity and eliminate temperature-dependent resistance variations.
Currently, X, Y bi-axial magnetic field sensors in plane have been developed for electronic compass to detect the direction of the earth magnetism by using the wheatstone bridge structure. However, since such a biaxial magnetic field sensor needs to detect X, Y two different directions, it is generally necessary that two magnetic sensors have different pinning directions, the pinning directions of the two magnetic sensors are 90 degrees, and the two magnetic sensors having the pinning directions of 90 degrees are combined to realize in-plane X, Y biaxial detection. The two magnetic sensor manufacturing processes need to be carried out on two different wafers, after the manufacturing is finished, the two wafers containing the magnetic sensor devices need to be respectively annealed along the X, Y axis, and finally, the single X, Y axis magnetic sensor chips are separated out and combined together to realize X, Y axis double-axis detection. Although the magnetic sensor is simple in design, the manufacturing process is complex, and the manufacturing cost is high. For independent single-axis magnetic sensor chips, such as X-axis or Y-axis, a Wheatstone (Wheatstone) bridge structure is usually adopted to improve sensitivity and eliminate temperature-dependent resistance variation.
At present, the Wheatstone full-bridge magnetic sensor has poor performance of resisting external magnetic field interference, and a free layer is easily damaged or fluctuated after the magnetic sensor is interfered by the external magnetic field, so that larger noise interference can be generated, the matching with an ASIC circuit and the signal output are influenced, and the final output result deviation of the sensor is larger.
Disclosure of Invention
The invention mainly aims to provide a magnetic sensor, a preparation method of the magnetic sensor and electronic equipment, and aims to solve the problem that the Wheatstone full-bridge magnetic sensor is poor in performance of resisting external magnetic field interference.
To achieve the above object, the present invention provides a magnetic sensor comprising:
a substrate; and
the magnetic resistance modules are arranged on the substrate and form a Wheatstone bridge, and at least one metal thin film sheet is arranged on one side of each magnetic resistance module, which is far away from the substrate.
In an embodiment of the invention, the magnetic sensor further includes a first insulating layer, and the first insulating layer is disposed on a side of the magnetoresistive module, which is away from the substrate, and covers the metal thin film sheet.
In an embodiment of the present invention, the magnetic resistance module includes two first magnetic resistance module groups and two second magnetic resistance module groups, where the two first magnetic resistance module groups and the two second magnetic resistance module groups form a first wheatstone bridge, the two first magnetic resistance module groups are respectively located at first opposite bridge arms of the first wheatstone bridge, and the two second magnetic resistance module groups are respectively located at second opposite bridge arms of the first wheatstone bridge;
the magnetization direction of the reference layer of the first magnetic resistance module group is the same as the positive direction of the first sensing axis of the magnetic sensor;
the second magnetic resistance module group comprises two second magnetic resistance modules which are connected in series; the magnetization directions of the reference layers of the two second magnetoresistive modules form a first included angle, and an angular bisector of the first included angle is parallel to the first sensing axis; the first included angle is greater than 0 degree and less than 180 degrees;
wherein the respective magnetization directions of the reference layers of the first and second magnetoresistive module groups are perpendicular to the respective easy magnetization axes.
In an embodiment of the invention, each of the first magnetic resistance module groups is formed by connecting M first magnetic resistance units in series; each second magnetic resistance module is formed by connecting N second magnetic resistance units in series; m ═ 2N; the first magnetic resistance unit and the second magnetic resistance unit are the same in shape and are both long-strip-shaped magnetic resistance film stacks; the easy magnetization axes of the M first magnetic resistance units are parallel to each other; the easy magnetization axes of the N second magnetic resistance units are parallel to each other;
and a plurality of metal thin film sheets which are arranged at intervals along the length direction are arranged on one side of each first magnetic resistance unit and/or each second magnetic resistance unit, which is far away from the substrate.
In an embodiment of the invention, the magnetic resistance module further includes two third magnetic resistance module groups and two fourth magnetic resistance module groups, the two third magnetic resistance module groups and the two fourth magnetic resistance module groups form a second wheatstone bridge, the two third magnetic resistance module groups are respectively located at a first opposite bridge arm of the second wheatstone bridge, and the two fourth magnetic resistance module groups are respectively located at a second opposite bridge arm of the second wheatstone bridge.
The magnetization directions of the reference layers of the adjacent third magnetic resistance module group and the fourth magnetic resistance module group form a second included angle, and an angular bisector of the second included angle is parallel to the first sensing axis of the magnetic sensor; the second included angle is larger than 0 degree and smaller than 180 degrees;
and the magnetization directions of the reference layers of the third magnetic resistance module group and the fourth magnetic resistance module group are perpendicular to the respective easy magnetization axes.
In an embodiment of the invention, each of the third magnetoresistive module groups is formed by connecting P third magnetoresistive units in series; each fourth magnetic resistance module group is formed by connecting P fourth magnetic resistance units in series; the third magnetoresistive unit and the fourth magnetoresistive unit are the same in shape and are both long-strip magnetoresistive film stacks; the easy magnetization axes of the P third magnetic resistance units are parallel to each other; the easy magnetization axes of the P fourth magnetic resistance units are parallel to each other;
and a plurality of metal thin film sheets which are arranged at intervals along the length direction are arranged on one side of each third magnetic resistance unit and/or each fourth magnetic resistance unit, which is far away from the substrate.
The invention also provides an electronic device, which comprises the magnetic sensor in the embodiment.
The invention also provides a preparation method of the magnetic sensor, which comprises the following steps:
providing a substrate;
sequentially depositing a plurality of layers of thin films on the substrate to obtain a magnetoresistive film stack;
carrying out imaging etching on the magnetoresistive film stack to form a plurality of magnetoresistive modules;
preparing a lead on the substrate, and connecting the reluctance modules through the lead to form a Wheatstone bridge;
preparing a metal thin film sheet on one side of the magnetic resistance module, which is far away from the substrate, so as to form a semi-finished product of the magnetic sensor;
and placing the semi-finished product of the magnetic sensor in an external magnetic field, and annealing in the external magnetic field.
In an embodiment of the present invention, the step of preparing a metal thin film sheet on a side of the magnetoresistive module facing away from the substrate to form a semi-finished product of the magnetic sensor further includes:
and preparing a first insulating layer on one side of the magnetic resistance module, which is far away from the substrate, and coating the metal thin film sheet by the first insulating layer.
In an embodiment of the invention, the magnetic field direction of the external magnetic field is the same as the positive direction of the first sensing axis of the magnetic sensor.
According to the technical scheme, a preparation foundation is provided through the substrate, the plurality of magnetic resistance modules are arranged on the substrate, and a Wheatstone bridge is formed, so that the sensitivity of the magnetic sensor can be improved, and temperature-related resistance change is eliminated. The design that one side of each magnetic resistance module, which is far away from the substrate, is covered with a metal thin film sheet can reduce the interference of an external magnetic field and reduce the noise of the magnetic sensor.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a magnetic sensor according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of another embodiment of a magnetic sensor according to the present invention;
FIG. 3 is a schematic structural diagram of a magnetic sensor according to another embodiment of the present invention;
fig. 4 is a schematic cross-sectional view of a magnetic sensor according to the present invention.
The reference numbers illustrate:
the implementation, functional features and advantages of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that, if directional indications (such as up, down, left, right, front, and back … …) are involved in the embodiment of the present invention, the directional indications are only used to explain the relative positional relationship between the components, the movement situation, and the like in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indications are changed accordingly.
In addition, if there is a description of "first", "second", etc. in an embodiment of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, the meaning of "and/or" appearing throughout is to include three juxtapositions, exemplified by "A and/or B," including either the A or B arrangement, or both A and B satisfied arrangement. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
The invention provides a magnetic sensor.
In the embodiment of the present invention, as shown in fig. 1, fig. 2, and fig. 3, the magnetic sensor includes a substrate 20 and a plurality of magnetoresistive modules, the plurality of magnetoresistive modules are disposed on the substrate 20 and form a wheatstone bridge, and a side of each of the magnetoresistive modules facing away from the substrate 20 is provided with at least one metal thin film 400.
In the embodiment, a preparation basis is provided by the substrate 20, and the plurality of magnetoresistive modules are arranged on the substrate 20 and form a wheatstone bridge, so that the sensitivity of the magnetic sensor can be improved, and the temperature-dependent resistance change can be eliminated. The design that one side of each of the magnetoresistive modules, which faces away from the substrate 20, is covered with the metal thin film 400 can reduce the interference of an external magnetic field and reduce the noise of the magnetic sensor.
The substrate 20 may be an insulating substrate 20 or a semiconductor substrate 20, and in the case of the semiconductor substrate 20, a second insulating layer 30 needs to be formed on the surface of the semiconductor substrate 20. For example: the substrate 20 is a silicon substrate 20, a second insulating layer 30 is formed by performing thermal oxidation treatment on the surface of the silicon substrate 20, and the second insulating layer 30 is a silicon oxide insulating layer. Thereafter, the thin films of the magnetoresistive module are deposited on the second insulating layer 30.
The magnetoresistive modules have shape anisotropy, and each has a long axis (i.e., easy magnetization axis) and a short axis (i.e., hard magnetization axis). In particular, the MR module can be etched to have a rectangular, hexagonal or elliptical shape, which makes it easy for the free layer to form a stable single domain shape, so that the shape anisotropy is strong enough to make the magnetization direction of the free layer along the long axis direction (i.e. along the easy magnetization axis direction) in the absence of an external magnetic field. That is, in the absence of an external magnetic field, the angle between the magnetization direction of the free layer of each magnetoresistive module and the magnetization direction of the reference layer of each magnetoresistive module is 90 °.
In an embodiment of the present invention, the magnetic sensor further includes a first insulating layer 40, where the first insulating layer 40 is disposed on a side of the magnetoresistive module facing away from the substrate 20 and covers the metal thin film 400.
It will be appreciated that by providing the first insulating layer 40, the magnetic sensor can be electrostatically protected from electrostatic breakdown during testing and use. Meanwhile, the first insulating layer 40 also has the functions of preventing oxidation of the magnetoresistive module and oxidation of the metal thin film sheet 400, so that performance degradation of the magnetic sensor is prevented, and stable performance of the magnetic sensor is ensured. The first insulating layer 40 also has waterproof and dustproof functions, and can prolong the service life of the magnetic sensor.
In an embodiment of the present invention, the magnetic sensor is a uniaxial magnetic field sensor, and the first sensing axis is an X-axis, so the uniaxial magnetic field sensor is an X-axis magnetic field sensor 100.
As shown in fig. 1, the magnetic resistance module includes two first magnetic resistance module groups 110 and two second magnetic resistance module groups 120, the two first magnetic resistance module groups 110 and the two second magnetic resistance module groups 120 form a first wheatstone bridge, the two first magnetic resistance module groups 110 are respectively located at a first opposite leg of the first wheatstone bridge, and the two second magnetic resistance module groups 120 are respectively located at a second opposite leg of the first wheatstone bridge;
the magnetization direction of the reference layer of the first magnetic resistance module group 110 is the same as the positive direction of the first sensing axis of the magnetic sensor (the direction indicated by the arrow in fig. 1, hereinafter the first sensing axis is referred to as the X axis);
the second magnetoresistive module group 120 includes two second magnetoresistive modules 121 connected in series; the magnetization directions of the reference layers of the two second magnetoresistive modules 121 form a first included angle, and an angle bisector of the first included angle is parallel to the first sensing axis; the first included angle is greater than 0 degree and less than 180 degrees;
wherein the magnetization directions of the reference layers of the first and second magnetoresistive module groups 110 and 121 are perpendicular to the easy magnetization axes thereof.
In this embodiment, the single-axis magnetic field sensor has a first sensing axis, indicating: the single-axis magnetic field sensor is responsive to an external magnetic field that is not perpendicular to the first sensing axis, i.e., the voltage output by the single-axis magnetic field sensor under the external magnetic field that is not perpendicular to the first sensing axis is not equal to the voltage output without the external magnetic field. When designing the resistance of each bridge arm in the single-axis magnetic field sensor provided in this embodiment, a person skilled in the art may set the resistance according to actual conditions, as long as it is ensured that the voltage output by the single-axis magnetic field sensor under the external magnetic field that is not perpendicular to the first sensing axis is not equal to the voltage output when there is no external magnetic field.
The first included angles formed by the magnetization directions of the reference layers of the two second magnetoresistance modules 121 in each second magnetoresistance module group 120 are all equal.
The operation of the X-axis magnetic field sensor 100 will be described with reference to fig. 1:
when the direction of the external magnetic field is the positive direction of the X axis, the magnetization directions of the free layers of the first magnetoresistive module group 110 and the second magnetoresistive module group 121 are both deflected to be consistent with the direction of the external magnetic field, that is, the included angle between the magnetization direction of the free layer of the first magnetoresistive module group 110 and the magnetization direction of the reference layer is reduced from 90 degrees to 0 degree; the angle between the magnetization direction of the free layer of the second magneto-resistive module 121 and the magnetization direction of the reference layer is reduced from 90 ° to a/2 (where a is the angle value of the first angle). The resistance of each bridge arm of the first relative bridge arm is reduced, the resistance of the second relative bridge arm is also reduced, but the change amplitude of the resistance of the first relative bridge arm is different from that of the resistance of the second relative bridge arm. At this time, the first wheatstone bridge output voltage Vout is different from the first wheatstone bridge output voltage Vout in the absence of the external magnetic field. Therefore, the X-axis magnetic field sensor 100 can induce an external magnetic field in a positive direction of the X-axis.
When the direction of the external magnetic field is the negative direction of the X-axis, the magnetization directions of the free layers of the first magnetoresistive module group 110 and the second magnetoresistive module group 121 are both deflected to be consistent with the direction of the external magnetic field, that is, the included angle between the magnetization direction of the free layer of the first magnetoresistive module group 110 and the magnetization direction of the reference layer is from 90 degrees to 180 degrees; the included angle between the magnetization direction of the free layer of the second magnetoresistive module 121 and the magnetization direction of the reference layer is increased from 90 degrees to (180 degrees-A/2), the resistance of each bridge arm of the first opposite bridge arm is increased, the resistance of the second opposite bridge arm is also increased, but the resistance change amplitudes of the first opposite bridge arm and the second opposite bridge arm are different. At this time, the first wheatstone bridge output voltage Vout is different from the first wheatstone bridge output voltage Vout in the absence of the external magnetic field. Therefore, the X-axis magnetic field sensor 100 can induce an external magnetic field in a negative direction of the X-axis.
When the direction of the external magnetic field is the Y-axis direction perpendicular to the X-axis, the magnetization direction of the free layer of the first magnetoresistive module group 110 does not deflect, i.e. the resistance of each bridge arm in the first opposite bridge arm does not change; the magnetization directions of the free layers of the two second magnetoresistive modules 121 located on the same one of the second opposite legs are deflected to be consistent with the direction of the external magnetic field, that is: an included angle between the magnetization direction of the free layer of one second magneto-resistive module 121 and the magnetization direction of the reference layer in the two second magneto-resistive modules 121 on the same bridge arm is reduced from 90 degrees to (90 degrees to a/2), and an included angle between the magnetization direction of the free layer of the other second magneto-resistive module 121 and the magnetization direction of the reference layer is increased from 90 degrees to (90 degrees to + a/2), so that the resistance changes of the two second magneto-resistive modules 121 on the same bridge arm are opposite, and the resistance of each bridge arm in the second opposite bridge arm is not changed. The output voltage of the first Wheatstone bridge is the same as that of the first Wheatstone bridge without external magnetic field. Therefore, the X-axis magnetic field sensor 100 does not induce an external magnetic field in the Y-axis direction.
In the technical scheme provided by this embodiment, under the action of an external magnetic field perpendicular to the first sensing axis, the resistances of two second magnetoresistive modules 121 on the same bridge arm in the second opposite bridge arm generate opposite responses, so that the resistance of the bridge arm is kept unchanged. Therefore, the single-axis magnetic field sensor provided by the embodiment can keep the resistance of each bridge arm unchanged under the external magnetic field perpendicular to the first sensing shaft, does not need to prepare a fixed resistor, and can reduce the complexity of the preparation process of the single-axis magnetic field sensor.
In an embodiment, the magnetization direction of the reference layer of the second magnetoresistive module 121 forms an obtuse angle with the positive direction of the first sensing axis.
In another embodiment, the magnetization direction of the reference layer of the second magnetoresistive module 121 forms an acute angle with the positive direction of the first sensing axis.
In an embodiment of the invention, as shown in fig. 1, each of the first magnetoresistive module groups 110 is formed by connecting M first magnetoresistive units 111 in series; each second magnetoresistive module 121 is formed by connecting N second magnetoresistive units 122 in series; m ═ 2N; the first magnetoresistive unit 111 and the second magnetoresistive unit 122 have the same shape, and are both long magnetoresistive film stacks 10; the easy magnetization axes of the M first magnetoresistive units 111 are parallel to each other; the easy magnetization axes of the N second magnetoresistive units 122 are parallel to each other;
a plurality of metal thin film sheets 400 arranged at intervals along the length direction are arranged on one side of each first magnetoresistive unit 111 and/or each second magnetoresistive unit 122, which faces away from the substrate 20.
In this embodiment, a plurality of metal thin film sheets 400 arranged at intervals along the length direction are disposed on the side of each of the first magnetoresistance units 111 and the second magnetoresistance units 122 facing away from the substrate 20.
In this embodiment, the first magnetoresistive elements 111 are connected in series through the lead 500, the second magnetoresistive elements 122 are connected in series through the lead 500, and the lead 500 is a metal lead.
It can be understood that the wheatstone full bridge of the X-axis magnetic field sensor 100 has a structure in which two bridge arms adopt the strip-shaped giant magnetoresistance film stack 10 with a certain included angle, which can not only realize resistance matching with other bridge arms, ensure that the output of the wheatstone full bridge is 0 when the external magnetic field of the magnetic sensor is 0, but also can offset the influence of temperature change on the wheatstone full bridge, so that the output of the wheatstone full bridge cannot drift along with the temperature.
Meanwhile, the design of M ═ 2N can ensure that the low resistance state resistance value of the first magnetic resistance module group 110 is equal to the low resistance state resistance value of the second magnetic resistance module group 120; the high-resistance state resistance value of the first magnetic resistance module group 110 is equal to the high-resistance state resistance value of the second magnetic resistance module group 120, so that the resistance matching of each bridge arm can be realized, and the measurement precision is improved. Thus, in the absence of an external magnetic field, the first Wheatstone bridge is balanced and the output voltage is 0. Therefore, the calculation difficulty of subsequently calculating the direction of the external magnetic field can be reduced, and the measurement precision of the magnetic sensor can be improved. Furthermore, the larger the number of magneto-resistive elements in each leg, the less noise the bridge will have, because the uncorrelated random behavior of each magneto-resistive element is averaged out.
In an embodiment of the invention, the first included angle a ranges from greater than 0 ° to less than 100 °. In this embodiment, the first included angle a is 90 °.
In an embodiment of the present invention, the magnetic sensor is a uniaxial magnetic field sensor, the sensing axis of the uniaxial magnetic field sensor is a second sensing axis, the second sensing axis is perpendicular to the first sensing axis, that is, the second sensing axis is a Y axis, and therefore, the uniaxial magnetic field sensor is a Y axis magnetic field sensor 200.
As shown in fig. 2, the magnetic resistance modules of the Y-axis magnetic field sensor 200 include two third magnetic resistance module groups 210 and two fourth magnetic resistance module groups 220, the two third magnetic resistance module groups 210 and the two fourth magnetic resistance module groups 220 form a second wheatstone bridge, the two third magnetic resistance module groups 210 are respectively located at a first opposite leg of the second wheatstone bridge, and the two fourth magnetic resistance module groups 220 are respectively located at a second opposite leg of the second wheatstone bridge.
The magnetization directions of the reference layers of the adjacent third magnetic resistance module group 210 and the fourth magnetic resistance module group 220 form a second included angle, and an angle bisector of the second included angle is parallel to the first sensing axis of the magnetic sensor, i.e., perpendicular to the second sensing axis; the second included angle is larger than 0 degree and smaller than 180 degrees;
wherein the respective reference layer magnetization directions of the third and fourth magnetic resistance module groups 210 and 220 are perpendicular to the respective easy magnetization axes.
In this embodiment, the single-axis magnetic field sensor has a second sensing axis, indicating: the uniaxial magnetic field sensor is responsive to an external magnetic field which is not perpendicular to the second sensing axis, that is, the voltage output under the external magnetic field which is not perpendicular to the second sensing axis is not equal to the voltage output without the external magnetic field. When designing the resistance of each bridge arm in the single-axis magnetic field sensor provided in this embodiment, a person skilled in the art may set the resistance according to actual conditions, as long as it is ensured that the voltage output by the single-axis magnetic field sensor under the external magnetic field that is not perpendicular to the second sensing axis is not equal to the voltage output when there is no external magnetic field.
The operation of the Y-axis magnetic field sensor 200 will be described with reference to fig. 2:
when the direction of the external magnetic field is the X-axis, the magnetization directions of the free layers of the first magnetoresistive module group 110 and the second magnetoresistive module group 120 are both deflected to be consistent with the direction of the external magnetic field, the resistances of the arms of the first opposite arm become smaller or larger, and the resistances of the arms of the second opposite arm also become larger or smaller. It can be seen that the resistance changes of the magnetoresistive modules on the two arms are opposite, and the output voltage Vout of the second wheatstone bridge is different from the output voltage Vout of the second wheatstone bridge in the absence of an external magnetic field. Therefore, the Y-axis magnetic field sensor 200 can induce an external magnetic field in the Y-axis direction.
When the direction of the external magnetic field is the X-axis direction perpendicular to the Y-axis, the magnetization directions of the free layers of the first magnetoresistive module group 110 and the second magnetoresistive module group 120 are both deflected to be consistent with the direction of the external magnetic field, the resistances of the arms of the first opposite arm are reduced or increased, and the resistances of the arms of the second opposite arm are also reduced or increased, so that the resistances of the magnetoresistive modules of the two arms are changed in the same manner. The second wheatstone bridge output voltage is the same as the second wheatstone bridge output voltage in the absence of the external magnetic field. Therefore, the Y-axis magnetic field sensor 200 does not induce an external magnetic field in the X-axis direction.
In an embodiment of the invention, as shown in fig. 2, each of the third magnetoresistive module groups 210 is formed by connecting P third magnetoresistive units 211 in series; each fourth magnetoresistive module group 220 is formed by connecting P fourth magnetoresistive units 221 in series; the third magnetoresistive unit 211 and the fourth magnetoresistive unit 221 have the same shape and are both long magnetoresistive film stacks 10; the easy magnetization axes of the P third magnetoresistive units 211 are parallel to each other; the easy magnetization axes of the P fourth magnetoresistive units 221 are parallel to each other;
a plurality of metal thin film sheets 400 arranged at intervals along the length direction are arranged on one side of each third magnetoresistive unit 211 and/or each fourth magnetoresistive unit 221, which faces away from the substrate 20.
It can be understood that the above design can ensure that the low resistance state resistance value of the third resistance module group 210 is equal to the low resistance state resistance value of the fourth resistance module group 220; the high-resistance state resistance value of the third magnetic resistance module group 210 is equal to the high-resistance state resistance value of the fourth magnetic resistance module group 220, so that the resistance matching of each bridge arm can be realized, and the measurement precision is improved. Thus, in the absence of an external magnetic field, the second Wheatstone bridge is balanced and the output voltage is 0. Therefore, the calculation difficulty of subsequently calculating the direction of the external magnetic field can be reduced, and the measurement precision of the magnetic sensor can be improved. Furthermore, the larger the number of magneto-resistive elements in each leg, the less noise the bridge will have, because the uncorrelated random behavior of each magneto-resistive element is averaged out.
The design that the long-strip-shaped magnetic film stack covers the metal thin film sheet 400 at a certain interval can improve the shape anisotropy of the magnetic film stack, reduce the interference of an external magnetic field and reduce the noise of the sensor.
In an embodiment of the present invention, as shown in fig. 3, the magnetic sensor is a two-axis magnetic field sensor 300, and the sensing axes of the two-axis magnetic field sensor 300 include a first sensing axis and a second sensing axis, the first sensing axis is an X axis, the second sensing axis is a Y axis, and the first sensing axis and the second sensing axis are perpendicular to each other, so that the two-axis magnetic field sensor 300 is an XY axis magnetic field sensor 200. The two-axis magnetic field sensor 300 includes the X-axis magnetic field sensor 100 and the Y-axis magnetic field sensor 200 described above.
The operation of the two-axis magnetic field sensor 300 will be described with reference to fig. 3:
the second Wheatstone bridge is not responsive to an external magnetic field oriented parallel to the first sensing axis when the external magnetic field is oriented parallel to the first sensing axis. The first Wheatstone bridge is capable of responding to an external magnetic field in a direction positive to the first sensing axis.
The second Wheatstone bridge is capable of responding to an external magnetic field having a direction parallel to the second sensing axis when the direction of the external magnetic field is parallel to the second sensing axis. The first wheatstone bridge is not responsive to an external magnetic field oriented parallel to the second sensing axis.
Therefore, in the dual-axis magnetic field sensor 300, under the action of an external magnetic field parallel to the second sensing axis, the second wheatstone bridge responds, the resistances of the arms of the first opposite arm of the first wheatstone bridge are kept unchanged, and the resistances of the two second magnetoresistive modules 121 on the same arm of the second opposite arm of the first wheatstone bridge generate opposite responses, so that the resistances of the arms of the second opposite arm are also kept unchanged, that is, the first wheatstone bridge does not respond; under the action of an external magnetic field parallel to the first sensing shaft, the second Wheatstone bridge has no response, and the first Wheatstone bridge has a response. Therefore, the dual-axis magnetic field sensor 300 can sense external magnetic fields in various directions in a plane, and a fixed resistor does not need to be manufactured, so that the complexity of the manufacturing process of the dual-axis magnetic field sensor 300 can be reduced.
The invention also provides an electronic device which comprises the magnetic sensor in the embodiment. The specific structure of the magnetic sensor refers to the above embodiments, and since the electronic device adopts all technical solutions of all the above embodiments, at least all beneficial effects brought by the technical solutions of the above embodiments are achieved, and no further description is given here. Including but not limited to cell phones, smart watches, MP4, head mounted display devices, game pads, and the like.
As shown in fig. 4, the present invention also provides a method for manufacturing a magnetic sensor, the method comprising the steps of:
s100: providing a substrate 20;
s200: depositing a plurality of layers of thin films on the substrate 20 in sequence to obtain a magnetoresistive film stack 10;
in an embodiment of the present invention, the step S200: depositing a plurality of thin films on the substrate 20 in sequence to obtain a magnetoresistive film stack 10, comprising:
s210: preparing a second insulating layer 30 on the surface of the substrate 20 by a rapid thermal oxidation process;
s220: depositing a plurality of thin films on the second insulating layer 30 in sequence to obtain a magnetoresistive film stack 10;
in one embodiment, the thin film is a giant magnetoresistance thin film, the giant magnetoresistance thin films are sequentially deposited on the upper surface of the silicon oxide insulating layer by a magnetron sputtering process to form a giant magnetoresistance film stack 10, the giant magnetoresistance film stack 10 may be a GMR film stack or a TMR film stack, and the thickness of the giant magnetoresistance film stack 10 is 30nm to 40 nm.
In general, the magnetoresistive film stack 10 may include a seed layer, an antiferromagnetic pinning layer, a reference layer, a nonmagnetic interlayer, an induced (i.e., free) layer, and a capping layer, which are sequentially stacked from bottom to top. The specific structure and specific material of each layer may be designed according to actual needs, and the present invention is not particularly limited thereto. For example: the antiferromagnetic pinning layer is mainly made of IrMn, PtMn and FeMn; a reference layer, the main material of which is CoFe; a nonmagnetic spacer layer of material predominantly Cu; and the main material of the free layer is CoFe.
S300: carrying out imaging etching on the magnetoresistive film stack 10 to form a plurality of magnetoresistive modules;
in an embodiment of the present invention, the step S300: carrying out imaging etching on the magnetoresistive film stack 10 to form a plurality of magnetoresistive modules, including:
s310: coating photoresist on the side of the magnetoresistive film stack 10, which is far away from the substrate 20, and transferring a pattern to the photoresist to form a magnetoresistive film stack 10 pattern;
in this embodiment, a photoresist is spin-coated on a substrate on which the giant magnetoresistance film stack 10 is deposited, and the photoresist is subjected to pre-baking, exposure, post-baking, and development, and the electrode pattern on the mask is transferred to the photoresist, thereby forming the pattern of the giant magnetoresistance film stack 10.
S320: and carrying out imaging etching according to the patterns of the magnetoresistive film stack 10 to form a plurality of magnetoresistive modules.
In this embodiment, the giant magnetoresistance film stack 10 is etched by ion beam etching to a thickness of 30-40 nm and over-etched to the first insulating layer 40.
S400: preparing a lead on the substrate 20, and connecting the magnetoresistive modules through the lead to form a Wheatstone bridge;
the lead can be prepared by thermal evaporation, magnetron sputtering and other processes. In specific implementation, a mask plate containing a wire pattern can be prepared in advance, and a metal material is deposited by thermal evaporation or magnetron sputtering through the mask plate to prepare the wire.
S500: preparing a metal thin film sheet 400 on one side of the magnetic resistance module, which is far away from the substrate 20, so as to form a semi-finished product of the magnetic sensor; (ii) a
In an embodiment of the present invention, the step S500: preparing a metal thin film sheet 400 on a side of the magnetoresistive module, which is away from the substrate 20, to form a semi-finished product of the magnetic sensor, specifically including:
s510: and manufacturing electrodes, wherein the electrodes are connected with the Wheatstone bridge to output the Wheatstone bridge voltage.
S520: and preparing a metal thin film sheet 400 on the side of the magnetic resistance module, which is far away from the substrate 20, so as to form a semi-finished product of the magnetic sensor.
In this embodiment, after S320, a positive photoresist is coated, the photoresist is subjected to pre-baking, exposure, post-baking, and development, a metal thin film is evaporated on the surface of the substrate by using a coating process, the coating process may adopt a magnetron sputtering process, an electron beam evaporation process, and the like, the thickness of the film is 200 to 300nm, and the metal thin film may be Al, Cr, Ti, or Au; and then soaking in acetone and isopropanol solvents in sequence, cleaning by combining ultrasonic waves, stripping metal, removing photoresist, and manufacturing an electrode and a metal thin film sheet 400.
S600: and placing the semi-finished product of the magnetic sensor in an external magnetic field, and annealing in the external magnetic field.
In an embodiment of the present invention, step S600 specifically includes: and annealing the manufactured semi-finished product in an annealing furnace, wherein an external magnetic field is applied in the annealing process, and the external magnetic field intensity can be 0.1T-1T.
In an embodiment of the invention, the magnetic field direction of the external magnetic field is the same as the positive direction of the first sensing axis of the magnetic sensor.
In an embodiment of the present invention, the step of preparing a metal thin film sheet on a side of the magnetoresistive module facing away from the substrate 20 to form a semi-finished product of the magnetic sensor further includes:
s700: the first insulating layer 40 is prepared on a side of the magnetoresistive module, which is away from the substrate 20, and the first insulating layer 40 covers the metal thin film 400.
In this embodiment, an inductively coupled plasma-chemical vapor deposition process is used to deposit the first insulating layer 40, the first insulating layer 40 may be silicon nitride or silicon oxide, and the thickness of the first insulating layer 40 is 200 to 300 nm.
In an embodiment of the present invention, after the step S700 and before the step S600, the method further includes: coating a positive photoresist, carrying out pre-baking, exposure, post-baking and development on the photoresist, etching the exposed first insulating layer 40 by adopting a Reactive Ion Etching (RIE) process, wherein the reaction temperature is 20-35 ℃, etching is stopped until the layer where the electrode is located, and then soaking in acetone and isopropanol solvent to remove the photoresist and expose an electrode testing area.
The manufacturing method is simple in manufacturing process, the double-shaft magnetic sensor can be manufactured on the same wafer, the manufacturing cost is low through one-time film stack deposition and simple manufacturing process and one-time annealing process, the manufacturing of sensor chips with two different sensing directions can be achieved, and X, Y-shaft double-shaft detection is achieved.
The above description is only an alternative embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. A magnetic sensor, characterized in that the magnetic sensor comprises:
a substrate; and
the magnetic resistance modules are arranged on the substrate and form a Wheatstone bridge, and at least one metal thin film sheet is arranged on one side of each magnetic resistance module, which is far away from the substrate.
2. The magnetic sensor of claim 1, further comprising a first insulating layer disposed on a side of the magnetoresistive module facing away from the substrate and covering the thin metal film.
3. The magnetic sensor of claim 1, wherein the magnetoresistive modules comprise two first magnetoresistive module groups and two second magnetoresistive module groups, the two first magnetoresistive module groups and the two second magnetoresistive module groups forming a first wheatstone bridge, the two first magnetoresistive module groups being located on respective first opposite legs of the first wheatstone bridge, the two second magnetoresistive module groups being located on respective second opposite legs of the first wheatstone bridge;
the magnetization direction of the reference layer of the first magnetic resistance module group is the same as the positive direction of the first sensing axis of the magnetic sensor;
the second magnetic resistance module group comprises two second magnetic resistance modules which are connected in series; the magnetization directions of the reference layers of the two second magnetoresistive modules form a first included angle, and an angular bisector of the first included angle is parallel to the first sensing axis; the first included angle is greater than 0 degree and less than 180 degrees;
wherein the respective magnetization directions of the reference layers of the first and second magnetoresistive module groups are perpendicular to the respective easy magnetization axes.
4. The magnetic sensor according to claim 3, wherein each of the first magnetoresistive module groups is formed by connecting M first magnetoresistive units in series; each second magnetic resistance module is formed by connecting N second magnetic resistance units in series; m ═ 2N; the first magnetic resistance unit and the second magnetic resistance unit are the same in shape and are both long-strip-shaped magnetic resistance film stacks; the easy magnetization axes of the M first magnetic resistance units are parallel to each other; the easy magnetization axes of the N second magnetic resistance units are parallel to each other;
one side of each first magnetic resistance unit, which is far away from the substrate, is provided with a plurality of metal thin film sheets which are arranged at intervals along the length direction;
and/or one side of each second magnetic resistance unit, which is far away from the substrate, is provided with a plurality of metal thin film sheets which are arranged at intervals along the length direction.
5. The magnetic sensor of claim 1, wherein the magnetoresistive modules further comprise two third magnetoresistive module groups and two fourth magnetoresistive module groups, the two third magnetoresistive module groups and the two fourth magnetoresistive module groups forming a second wheatstone bridge, the two third magnetoresistive module groups being located on respective first opposite legs of the second wheatstone bridge, the two fourth magnetoresistive module groups being located on respective second opposite legs of the second wheatstone bridge;
the magnetization directions of the reference layers of the adjacent third magnetic resistance module group and the fourth magnetic resistance module group form a second included angle, and an angular bisector of the second included angle is parallel to the first sensing axis of the magnetic sensor; the second included angle is larger than 0 degree and smaller than 180 degrees;
and the magnetization directions of the reference layers of the third magnetic resistance module group and the fourth magnetic resistance module group are perpendicular to the respective easy magnetization axes.
6. The magnetic sensor according to claim 5, wherein each of the third magnetoresistive module groups is formed by connecting P third magnetoresistive units in series; each fourth magnetic resistance module group is formed by connecting P fourth magnetic resistance units in series; the third magnetoresistive unit and the fourth magnetoresistive unit are the same in shape and are both long-strip magnetoresistive film stacks; the easy magnetization axes of the P third magnetic resistance units are parallel to each other; the easy magnetization axes of the P fourth magnetic resistance units are parallel to each other;
one side of each third magnetic resistance unit, which is far away from the substrate, is provided with a plurality of metal thin film sheets which are arranged at intervals along the length direction;
and/or a plurality of metal thin film sheets are arranged at intervals along the length direction on one side of each fourth magnetic resistance unit, which is far away from the substrate.
7. An electronic device characterized in that it comprises a magnetic sensor according to any one of claims 1 to 6.
8. A method of manufacturing a magnetic sensor, the method comprising the steps of:
providing a substrate;
sequentially depositing a plurality of layers of thin films on the substrate to obtain a magnetoresistive film stack;
carrying out imaging etching on the magnetoresistive film stack to form a plurality of magnetoresistive modules;
preparing a lead on the substrate, and connecting the reluctance modules through the lead to form a Wheatstone bridge;
preparing a metal thin film sheet on one side of the magnetic resistance module, which is far away from the substrate, so as to form a semi-finished product of the magnetic sensor;
and placing the semi-finished product of the magnetic sensor in an external magnetic field, and annealing in the external magnetic field.
9. The method of manufacturing a magnetic sensor according to claim 8, wherein the step of manufacturing a metal thin film sheet on a side of the magnetoresistive module facing away from the substrate to form a semi-finished magnetic sensor further comprises:
and preparing a first insulating layer on one side of the magnetic resistance module, which is far away from the substrate, and coating the metal thin film sheet by the first insulating layer.
10. The method of manufacturing a magnetic sensor according to claim 8, wherein a magnetic field direction of the external magnetic field is the same as a positive direction of a first sensing axis of the magnetic sensor.
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| CN115754848B (en) * | 2022-11-17 | 2024-04-02 | 江苏多维科技有限公司 | Magnetic sensor |
| CN117289186B (en) * | 2023-11-24 | 2024-01-26 | 江苏多维科技有限公司 | Magnetic grid sensor |
| CN117858608A (en) * | 2023-12-22 | 2024-04-09 | 珠海多创科技有限公司 | Magneto-resistance element, preparation method thereof and magneto-resistance sensor |
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