CN113029208B

CN113029208B - Laser programming writing device and method for magnetoresistive device

Info

Publication number: CN113029208B
Application number: CN202110247124.XA
Authority: CN
Inventors: 詹姆斯·G·迪克; 周志敏
Original assignee: MultiDimension Technology Co Ltd
Current assignee: MultiDimension Technology Co Ltd
Priority date: 2021-03-05
Filing date: 2021-03-05
Publication date: 2022-10-21
Anticipated expiration: 2041-03-05
Also published as: CN113029208A; US20240118317A1; EP4303540A1; JP2024508914A; WO2022184090A1

Abstract

The embodiment of the invention discloses a laser programming writing device and a method for a magnetoresistive device, wherein the device comprises: the sensor comprises a substrate, a magnetoresistive sensor and a heat control layer which are sequentially stacked, wherein a non-magnetic insulating layer for electric isolation is arranged between the magnetoresistive sensor and the heat control layer, the magnetoresistive sensor is composed of a magnetoresistive sensing unit, and the magnetoresistive sensing unit is a multilayer thin film stacking structure with an antiferromagnetic layer; the laser programming writing device is used for changing film layer parameters of the thermal control layer and/or the magneto-resistive sensor in a laser programming writing stage so as to adjust the change rate of the temperature of the magneto-resistive sensor along with the laser power and increase or decrease the temperature of the magneto-resistive sensor written by the same laser power, wherein the film layer parameters comprise at least one of film layer materials and film layer thicknesses. The embodiment of the invention realizes the high-precision laser writing programming of the magnetoresistive sensor, improves the manufacturing defects of the magnetoresistive sensor, improves the performance of the magnetoresistive sensor and further improves the detection precision of the magnetoresistive sensor.

Description

Laser programming writing device and method for magnetoresistive device

Technical Field

The embodiment of the invention relates to the technical field of magnetic sensors, in particular to a laser programming writing device and method for a magnetoresistive device.

Background

The magneto-resistance device comprises various magneto-resistance devices such as a linear sensor, an angle sensor, a switch sensor, a gradient sensor, a downstream current sensor, a financial magnetic head, an image sensor, a magneto-electric encoder, a magneto-electric isolator and the like, the magneto-resistance device is internally integrated with the magneto-resistance sensor, and the magneto-resistance sensor is of a type comprising a tunnel magneto-resistance TMR sensor, a giant magneto-resistance GMR sensor and an anisotropic magneto-resistance AMR sensor.

At present, when a magnetoresistive sensor is manufactured, a whole wafer (wafer) needs to be annealed by a magnetic field first, and then is packaged by adopting a flip die packaging method. Specifically, two identical crystal grains (die) are selected during packaging, one of the crystal grains is rotated 180 degrees relative to the other crystal grain, and then wire bonding is carried out to obtain the magneto-resistive sensor.

However, the manufacturing method has a defect that the relative phases of the two wafers need to be realized by later operation, the precision of the method is difficult to guarantee, the performance of the magnetoresistive sensor is affected, the detection precision of the magnetoresistive sensor is further reduced, and the process complexity of the magnetoresistive sensor is also increased.

Disclosure of Invention

The embodiment of the invention provides a laser programming writing device and a laser programming writing method for a magnetoresistive device, which are used for manufacturing a high-precision magnetoresistive sensor.

The embodiment of the invention provides a laser programming writing device for a magnetoresistive device, which comprises: the sensor comprises a substrate, a magnetoresistive sensor and a thermal control layer which are sequentially stacked, wherein a non-magnetic insulating layer for electrical isolation is arranged between the magnetoresistive sensor and the thermal control layer, the magnetoresistive sensor is composed of a magnetoresistive sensing unit, and the magnetoresistive sensing unit is a multilayer thin film stacking structure with an antiferromagnetic layer;

the laser programming writing device is used for changing film parameters of the thermal control layer and/or the magnetoresistive sensor in a laser programming writing stage so as to adjust the change rate of the temperature of the magnetoresistive sensor along with the laser power and increase or decrease the temperature of the magnetoresistive sensor written by the same laser power, wherein the film parameters comprise at least one of film material and film thickness.

Based on the same inventive concept, the embodiment of the invention also provides a laser programming writing method for the magnetoresistive device, which is realized by a laser programming writing system, wherein the laser programming writing system comprises a magnetic field generating device and the laser programming writing device; the laser programming writing method of the laser programming writing system comprises the following steps:

changing film layer parameters of the thermal control layer and/or the magnetoresistive sensor during a laser programming write phase, wherein the film layer parameters comprise at least one of film layer material and film layer thickness;

and adjusting the rate of change of the temperature of the magneto-resistive sensor with the laser power, and increasing or decreasing the temperature of the magneto-resistive sensor written with the same laser power.

In an embodiment of the present invention, a laser programming writing device includes: the substrate, be located the magnetoresistive sensor on the substrate and be located the thermal control layer on the magnetoresistive sensor, be provided with non-magnetic electric insulation layer between thermal control layer and the magnetoresistive sensor, the magnetoresistive sensor includes the magnetoresistive sensing unit, this magnetoresistive sensing unit is for including the multilayer film stack structure of antiferromagnetic layer, the parameter of thermal control layer takes place the serial number, can increase or reduce the rate of change of the temperature of corresponding magnetoresistive sensing unit array along with writing in laser power, and increase or reduce the temperature of magnetoresistive sensing unit array when the same power laser write programming, thereby the high accuracy laser write programming of magnetoresistive sensor has been realized, improve the manufacturing defect of magnetoresistive sensor, the performance of magnetoresistive sensor has been improved, and then improve the detection accuracy of magnetoresistive sensor.

Drawings

To more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, a brief description will be given below of the drawings required for the embodiments or the technical solutions in the prior art, and it is obvious that the drawings in the following description, although being some specific embodiments of the present invention, can be extended and extended to other structures and drawings by those skilled in the art according to the basic concepts of the device structure, the driving method and the manufacturing method disclosed and suggested by the various embodiments of the present invention, without making sure that these should be within the scope of the claims of the present invention.

FIG. 1 is a schematic diagram of a laser programming writing apparatus for a magnetoresistive device according to an embodiment of the present invention;

FIG. 2 is a schematic diagram of a multi-layer thin film stack of a laser programming writing device according to an embodiment of the present invention;

FIG. 3 is a schematic view of another multilayer thin film stack structure;

FIG. 4 is a schematic view of yet another multilayer thin film stack structure;

FIG. 5 is a schematic diagram of a magnetoresistive sensor according to an embodiment of the invention;

FIG. 6 is a schematic diagram of a single-axis push-pull magnetoresistive sensor according to an embodiment of the invention;

FIG. 7A is a schematic illustration of laser write programming of a push-pull magnetoresistive sensor;

FIG. 7B is the temperature profile of FIG. 7A;

FIG. 8A is a schematic diagram of a thermal anneal write + d moment in a single-axis push-pull magnetoresistive sensor;

FIG. 8B is the temperature profile of FIG. 8A;

FIG. 9A is a schematic diagram of global laser programmed writing of the + d moment in a single-axis push-pull magnetoresistive sensor;

FIG. 9B is the temperature profile of FIG. 9A;

FIG. 10A is a schematic diagram of a local laser programmed write + d moment in a single-axis push-pull magnetoresistive sensor;

FIG. 10B is the temperature profile of FIG. 10A;

FIG. 11A is a schematic diagram of a global laser programmed write-d magnetic moment in a single axis push-pull magnetoresistive sensor;

FIG. 11B is the temperature profile of FIG. 11A;

FIG. 12A is a schematic illustration of a local laser programmed write-d magnetic moment in a single axis push-pull magnetoresistive sensor;

FIG. 12B is the temperature profile of FIG. 12A;

FIG. 13A is a schematic diagram of a thermal anneal write + d1 magnetic moment in a dual-axis push-pull magnetoresistive sensor;

FIG. 13B is the temperature profile of FIG. 13A;

FIG. 14A is a schematic diagram of global laser programmed writing of the + d1 magnetic moment in a two-axis push-pull magnetoresistive sensor;

FIG. 14B is the temperature profile of FIG. 14A;

FIG. 15A is a schematic diagram of a local laser programmed writing of the + d1 magnetic moment in a two-axis push-pull magnetoresistive sensor;

FIG. 15B is the temperature profile of FIG. 15A;

FIG. 16A is a schematic diagram of global laser programmed write-d 1 magnetic moment in a two-axis push-pull magnetoresistive sensor;

FIG. 16B is the temperature profile of FIG. 16A;

FIG. 17A is a schematic illustration of a local laser programmed write-d 1 magnetic moment in a biaxial push-pull magnetoresistive sensor;

FIG. 17B is the temperature profile of FIG. 17A;

FIG. 18A is a schematic diagram of global laser programmed writing of the + d2 magnetic moment in a two-axis push-pull magnetoresistive sensor;

FIG. 18B is the temperature profile of FIG. 18A;

FIG. 19A is a schematic illustration of a local laser programmed write of the + d2 magnetic moment in a biaxial push-pull magnetoresistive sensor;

FIG. 19B is the temperature profile of FIG. 19A;

FIG. 20A is a schematic illustration of a global laser programmed write-d 2 magnetic moment in a two-axis push-pull magnetoresistive sensor;

FIG. 20B is the temperature profile of FIG. 20A;

FIG. 21A is a schematic illustration of a local laser programmed write-d 2 magnetic moment in a two-axis push-pull magnetoresistive sensor;

FIG. 21B is the temperature profile of FIG. 21A;

FIG. 22A is a schematic illustration of thermal annealing writing of the + d1 magnetic moment in a three-axis push-pull magnetoresistive sensor;

FIG. 22B is the temperature profile of FIG. 22A;

FIG. 23A is a schematic diagram of global laser programmed writing of the + d1 magnetic moment in a three-axis push-pull magnetoresistive sensor;

FIG. 23B is the temperature profile of FIG. 23A;

FIG. 24A is a schematic illustration of a local laser programmed writing of the + d1 magnetic moment in a three-axis push-pull magnetoresistive sensor;

FIG. 24B is the temperature profile of FIG. 24A;

FIG. 25A is a schematic illustration of a global laser programmed write-d 1 magnetic moment in a three-axis push-pull magnetoresistive sensor;

FIG. 25B is the temperature profile of FIG. 25A;

FIG. 26A is a schematic illustration of a local laser programmed write-d 1 magnetic moment in a three-axis push-pull magnetoresistive sensor;

FIG. 26B is the temperature profile of FIG. 26A;

FIG. 27A is a schematic diagram of global laser programmed writing of the + d2 magnetic moment in a three-axis push-pull magnetoresistive sensor;

FIG. 27B is the temperature profile of FIG. 27A;

FIG. 28A is a schematic illustration of a local laser programmed writing of the + d2 magnetic moment in a three-axis push-pull magnetoresistive sensor;

FIG. 28B is the temperature profile of FIG. 28A;

FIG. 29A is a schematic of global laser programmed write-d 2 magnetic moment in a three-axis push-pull magnetoresistive sensor;

FIG. 29B is the temperature profile of FIG. 29A;

FIG. 30A is a schematic illustration of a local laser programmed write-d 2 magnetic moment in a three-axis push-pull magnetoresistive sensor;

FIG. 30B is the temperature profile of FIG. 30A;

FIG. 31A is a schematic illustration of global laser programmed writing of the + d3 magnetic moment in a three-axis push-pull magnetoresistive sensor;

FIG. 31B is the temperature profile of FIG. 31A;

FIG. 32A is a schematic illustration of a partial laser programming write of the + d3 magnetic moment in a three-axis push-pull magnetoresistive sensor;

FIG. 32B is the temperature profile of FIG. 32A;

FIG. 33A is a schematic illustration of a global laser programmed write-d 3 magnetic moment in a three-axis push-pull magnetoresistive sensor;

FIG. 33B is the temperature profile of FIG. 33A;

FIG. 34A is a schematic illustration of a local laser programmed write-d 3 magnetic moment in a three-axis push-pull magnetoresistive sensor;

fig. 34B is a temperature distribution diagram of fig. 34A.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions of the present invention will be clearly and completely described through embodiments with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the basic idea disclosed and suggested by the embodiments of the present invention, fall within the scope of protection of the present invention.

Referring to fig. 1, a schematic diagram of a laser programming writing device for a magnetoresistive device according to an embodiment of the present invention is shown. As shown in fig. 1, the laser programming writing apparatus includes: a substrate 100, a magnetoresistive sensor 200, and a thermal control layer 300, which are sequentially stacked, with a non-magnetic insulating layer 400 for electrical isolation provided between the magnetoresistive sensor 200 and the thermal control layer 300, the magnetoresistive sensor 200 being composed of a magnetoresistive sensing unit having a multilayer thin-film stacked structure with an antiferromagnetic layer; the laser programming writing device is used for changing film layer parameters of the thermal control layer 300 and/or the magnetoresistive sensor 200 during a laser programming writing phase so as to adjust a change rate of the temperature of the magnetoresistive sensor 200 with laser power and increase or decrease the temperature of the magnetoresistive sensor 200 written with the same laser power, wherein the film layer parameters comprise at least one of film layer material and film layer thickness.

In this embodiment, the optional substrate 100 is a wafer; the magnetoresistive sensor 200 is composed of a magnetoresistive sensing unit, which is a multilayer thin-film stacked structure having an antiferromagnetic layer; a non-magnetic insulating layer 400 is disposed between the magnetoresistive sensor 200 and the thermal control layer 300, and the non-magnetic insulating layer 400 serves to electrically insulate and isolate the magnetoresistive sensor 200 from the thermal control layer 300.

The laser programming writing process is a process of writing the magnetoresistive sensor 200 by laser, and the process of programming the magnetic moment of the antiferromagnetic layer in the magnetoresistive sensor 200 is also defined as a laser programming writing phase. In the laser programming writing stage, the change rate of the temperature T of the magnetoresistive sensor 200 in the heat transfer process changes with the change of the laser power P written into the magnetoresistive sensor 200, so that the temperature change rate of the magnetoresistive sensor 200 with the change of the laser power can be increased or decreased by adjusting the laser power written into the magnetoresistive sensor 200, and the temperature change rate is dT/dP, thereby realizing the control of the temperature written into the magnetoresistive sensor 200 with the same laser power.

When the laser is written into the magnetoresistive sensor 200, the thermal control layer 300 is required to pass through, and if the material or thickness of the thermal control layer 300 changes, the same laser power passes through the thermal control layer 300 with different film parameters, and the laser power actually written into the magnetoresistive sensor 200 also changes accordingly. Based on this, by increasing or decreasing the material or thickness of the thermal control layer 300, the magnitude of the laser power actually written into the magnetoresistive sensor 200 at the same laser power can be adjusted, and then the thermal conductivity of the magnetoresistive sensor 200 is controlled under the action of the laser, so that the thermal conductivity of the magnetoresistive sensor 200 changes correspondingly to the change of the laser power, the adjustment of the temperature change rate of the magnetoresistive sensor 200 along with the laser power is realized, and further the control of the temperature written into the magnetoresistive sensor 200 at the same laser power is realized. Or in the reverse direction, the direction of the,

and reversely deducing the required laser power according to the required temperature and/or change rate of the magnetoresistive sensor 200 and the film layer parameters of the thermal control layer 300 which are fixed and unchanged, driving a laser programming and writing device to emit laser according to the calculated laser power, and adjusting the magnetoresistive sensor 200 to the required temperature change rate and the required temperature by the laser power actually written into the magnetoresistive sensor 200 when the laser is written into the magnetoresistive sensor 200 through the thermal control layer 300.

In summary, under the same laser action, by increasing or decreasing the material or thickness of the thermal control layer 300, the rate of change of the temperature of the magnetoresistive sensor 200 with the change of the laser power can be increased or decreased, so that the temperature of the magnetoresistive sensor 200 under the same laser power can be adjusted, for example, the temperature of the magnetoresistive sensor 200 is increased or decreased, thereby programming the magnetic moment of the antiferromagnetic layer in the magnetoresistive sensor 200.

In a similar manner, the magnetoresistive sensing unit has a stacked multilayer film structure with an antiferromagnetic layer, and when laser is written into the magnetoresistive sensor 200, laser passes through each film layer on the antiferromagnetic layer in the magnetoresistive sensor 200 in the laser propagation path and then enters the antiferromagnetic layer. If the material or thickness of at least one film layer of the magnetoresistive sensor 200 that is located on the antiferromagnetic layer and through which the laser passes changes, such as increasing or decreasing, the laser power actually written into the magnetoresistive sensor 200 also changes accordingly, so that the thermal conductivity of the magnetoresistive sensor 200 changes correspondingly to the change in the laser power, and the adjustment of the rate of change of the temperature of the magnetoresistive sensor 200 with the laser power is realized, and further the control of the temperature at which the same laser power is written into the magnetoresistive sensor 200 is realized, thereby realizing the programming of the magnetic moment of the antiferromagnetic layer in the magnetoresistive sensor 200.

The wavelength range of the selectable laser is between 100nm and 3000 nm. The laser power is adjusted within this range, thereby achieving temperature control of the magnetoresistive sensor. In other embodiments, the thermal control layer may be located within the multilayer thin film stack.

In an embodiment of the present invention, a laser programming writing apparatus includes: the substrate, be located the magnetoresistive sensor on the substrate and be located the thermal control layer on the magnetoresistive sensor, be provided with non-magnetic electric insulation layer between thermal control layer and the magnetoresistive sensor, the magnetoresistive sensor includes the magnetoresistive sensing unit, this magnetoresistive sensing unit is for including the multilayer film stack structure of antiferromagnetic layer, the parameter of thermal control layer takes place the serial number, can increase or reduce the rate of change of the temperature of corresponding magnetoresistive sensing unit array along with writing in laser power, and increase or reduce the temperature of magnetoresistive sensing unit array when the same power laser write programming, thereby the high accuracy laser write programming of magnetoresistive sensor has been realized, improve the manufacturing defect of magnetoresistive sensor, the performance of magnetoresistive sensor has been improved, and then improve the detection accuracy of magnetoresistive sensor.

Illustratively, based on the basic scheme, the optional magnetoresistive sensor is a giant magnetoresistive GMR sensor, a tunneling magnetoresistive TMR sensor, or an anisotropic magnetoresistive AMR sensor. Optionally, in a direction from the substrate to the thermal control layer, the multilayer thin film stack structure includes a seed layer, an antiferromagnetic layer, a free layer, a top electrode layer, and a cap layer, which are sequentially stacked, and a first insulating layer is disposed between the substrate and the seed layer; the laser programming writing device is used for increasing or reducing the temperature of the same laser power writing magnetoresistive sensor by changing the material of at least one film layer of the thermal control layer, the first insulating layer, the seed layer, the top electrode layer and the cap layer; and/or the laser programming writing device is used for increasing or reducing the temperature of the same laser power writing magnetoresistive sensor by changing the thickness of at least one film layer in the thermal control layer, the first insulating layer, the seed layer, the top electrode layer and the cap layer.

Referring to fig. 2, a schematic diagram of a multilayer thin film stack of a laser programming writing device according to an embodiment of the invention is shown. As shown in fig. 2, the optional magnetoresistive sensor 200 is a GMR or TMR sensor, and the magnetoresistive sensor 200 includes a SAF reference layer 204. In this embodiment, the laser programming writing device includes a substrate 100, a magnetoresistive sensor 200 located on the substrate 100, and a Heat control layer 300 located on the magnetoresistive sensor 200, it is understood that a non-magnetic insulating layer (not shown) is further disposed between the magnetoresistive sensor 200 and the Heat control layer 300, and the substrate 100 may be a wafer, but is not limited thereto.

The magnetoresistive sensor 200 is composed of one or more magnetoresistive sensing units having a multi-layered thin film stack structure. The multilayer thin film stack structure includes, in order along a direction from the substrate 100 to the heat control layer 300, a first insulating layer 201, a Seed layer Seed202, an antiferromagnetic layer AFL203, an SAF reference layer 204, a barrier layer BL205, a free layer FL206, a top electrode layer TE207, and a CAP layer CAP208. Wherein the SAF reference layer 204 includes: a pinning layer PL204a, a metal layer ML204b, and a reference layer RL204c.

Referring to fig. 3, a schematic diagram of a multilayer thin film stack of another laser programming writing device according to an embodiment of the invention is shown. As shown in fig. 3, the optional magnetoresistive sensor 200 is a GMR or TMR sensor. The difference with fig. 2 is that in fig. 3, the SAF reference layer of the magnetoresistive sensor 200 includes a reference layer RL204.

For the magnetoresistive sensor 200 shown in fig. 2 and 3, if the barrier layer BL205 is a film layer made of a metal material, and the metal material can be selected to include any one or an alloy of Ta, ru and Cu, the magnetoresistive sensing unit is GMR; if the barrier layer BL205 is a film made of a non-metallic material, the non-metallic material may include Al ₂ O ₃ And MgO, the magneto-resistive sensing unit is TMR.

Referring to fig. 4, a schematic diagram of a multilayer thin film stack of another laser programming writing device according to an embodiment of the invention is shown. As shown in fig. 4, the alternative magnetoresistive sensor 200 is an AMR sensor. The difference from fig. 2 is that in fig. 4, the magnetoresistive sensor 200 does not include the SAF reference layer and the barrier layer BL.

Illustratively, on the basis of the above basic scheme, the selectable magnetoresistive sensor is a push-pull magnetoresistive sensor, the push-pull magnetoresistive sensor is composed of a push magnetoresistive unit array and a pull magnetoresistive unit array, and the push magnetoresistive unit array and the pull magnetoresistive unit array are both composed of magnetoresistive sensing units. The push-pull type magnetic resistance sensor adopts a full bridge structure, a half bridge structure or a quasi bridge structure.

Referring to fig. 5, a schematic diagram of a magnetoresistive sensor according to an embodiment of the invention is shown. As shown in fig. 5, the magnetoresistive sensor is located between the substrate 100 and the thermal control layer, and optionally the magnetoresistive sensor is a push-pull magnetoresistive sensor 200. In this embodiment, the push-pull magnetoresistive sensor 200 comprises a push magnetoresistive cell array and a pull magnetoresistive cell array, wherein the push magnetoresistive cell array is formed by the push magnetoresistive sensing cells 200a, and the pull magnetoresistive cell array is formed by the pull magnetoresistive sensing cells 200 b. The magnetoresistive sensor shown in fig. 5 is here illustrated by way of example for a GMR/TMR sensor with an SAF reference layer as shown in fig. 2, but its analytical procedure and results are equally applicable to other magnetoresistive sensors with a different SAF reference layer or without an SAF reference layer.

The push magnetoresistive sensing unit 200a and the pull magnetoresistive sensing unit 200b are located on the same substrate 100, the thermal control layer located on the push magnetoresistive sensing unit 200a is a push thermal control layer 300a, and the thermal control layer located on the pull magnetoresistive sensing unit 200b is a pull thermal control layer 300b. The antiferromagnetic layer 203a in the stacked multilayer thin film structure of the push magnetoresistive sensing unit 200a and the antiferromagnetic layer 203b in the stacked multilayer thin film structure of the pull magnetoresistive sensing unit 200b have opposite magnetic moment directions, where the magnetic moment direction of the antiferromagnetic layer 203a in the push magnetoresistive sensing unit 200a is + d, the magnetic moment direction of the antiferromagnetic layer 203b in the pull magnetoresistive sensing unit 200b is-d, and d may be an X direction, a Y direction, or a Z direction.

The materials and properties of the following identically named film layers in the push magneto-resistive sensing cell 200a and the pull magneto-resistive sensing cell 200b are the same. Specifically, the materials of the pinned layer PL in the push magnetoresistive sensing unit 200a and the pinned layer PL204a in the pull magnetoresistive sensing unit 200b are the same and have the same performance, the materials of the metal layer ML204b in the two are the same and have the same performance, the materials of the reference layer RL204c in the two are the same and have the same performance, the materials of the barrier layer BL205 in the two are the same and have the same performance, and the materials of the free layer FL206 in the two are the same and have the same performance.

In order to make the push magneto-resistive sensing unit 200a and the pull magneto-resistive sensing unit 200b of the magneto-resistive sensor have thermal conductivity difference under the same laser power, at least one of the following film layer designs can be implemented:

1) The CAP layer CAP of the push magneto-resistive sensing unit 200a and the CAP layer 208 of the pull magneto-resistive sensing unit 200b are made of different materials and/or different thicknesses;

2) The top electrode layer TE of the push magneto-resistive sensing unit 200a and the top electrode layer 207 of the pull magneto-resistive sensing unit 200b are made of different materials and/or different thicknesses;

3) The Seed layer Seed of the push magneto-resistive sensing cell 200a and the Seed layer 202 of the pull magneto-resistive sensing cell 200b are made of different materials and/or different thicknesses;

4) The first insulating layer of the push magneto-resistive sensing unit 200a and the first insulating layer 201 of the pull magneto-resistive sensing unit 200b are made of different materials and/or different thicknesses;

5) The push thermal control layer 300a of the push magnetoresistive sensing unit 200a and the push thermal control layer 300b of the push magnetoresistive sensing unit 200b are made of different materials and/or different thicknesses;

in the above design schemes of 1) to 5), any one or a combination of multiple layers may be adopted, and in the laser programming writing process, the difference in thermal conductivity between the push magnetoresistive sensing unit 200a and the pull magnetoresistive sensing unit 200b is realized, and finally, the temperature difference between the antiferromagnetic layer AFL of the push magnetoresistive sensing unit 200a and the antiferromagnetic layer AFL of the pull magnetoresistive sensing unit 200b when writing with the same laser power is realized, so that the laser programming writing process and parameters are changed, and the magnetic moments of the antiferromagnetic layer are respectively written.

Illustratively, the constituent material of the optional thermal control layer comprises a non-magnetic laser low absorption coefficient material or a laser high absorption coefficient material, wherein the laser low absorption coefficient material comprises at least one of tantalum, titanium, copper, molybdenum, gold, silver, aluminum, platinum, and tin, and the laser high absorption coefficient material comprises at least one of zirconium oxide, titanium oxide, a carbon film, a phosphate, and titanium aluminum nitride. The constituent materials of the optional thermal control layer include carbon black, a non-magnetic laser-absorbing resin, or a non-magnetic laser-absorbing coating.

The thermal control layer may be an air layer or, alternatively, the thermal control layer may be a non-magnetic material. The nonmagnetic material constituting the thermal control layer includes: a laser low absorption coefficient material, such as at least one of Ta, ti, cu, mo, au, ag, al, mo, pt and Sn; alternatively, the nonmagnetic material constituting the thermal control layer includes: and laser high absorption coefficient materials, such as at least one of ZrO, tiO, carbon film, phosphate and TiAlN. If the thermal control layer is made of a non-magnetic material, an electrical insulating material may be used between the thermal control layer and the magnetoresistive sensor to achieve electrical isolation, i.e., a non-magnetic insulating layer is disposed between the thermal control layer and the magnetoresistive sensor. Optionally, the heat control layer comprises carbon black, a laser absorbing resin or a laser absorbing coating, wherein the laser absorbing resin and the laser absorbing coating comprise a mixture of polymer, carbon black and oxide particles.

The selectable push-pull magnetoresistive sensor is a single-axis push-pull magnetoresistive sensor, a double-axis push-pull magnetoresistive sensor or a three-axis push-pull magnetoresistive sensor.

The optional push-pull magnetoresistive sensor is a single-axis push-pull magnetoresistive sensor. For example, the magnetoresistive sensor is an X uniaxial push-pull magnetoresistive sensor including a + X magnetoresistive sensing unit array and an-X magnetoresistive sensing unit array. Or the + X magnetic resistance sensing unit array and the-X magnetic resistance sensing unit array flux concentrator form a Y-axis push-pull type magnetic resistance sensor. Or the + X magnetic resistance sensing unit array and the-X magnetic resistance sensing unit array flux concentrators form a Z-axis push-pull type magnetic resistance sensor. Or the + Y and-Y magnetoresistive sensing unit array flux concentrators form a Z-axis push-pull magnetoresistive sensor.

The optional push-pull magnetoresistive sensor is a dual-axis push-pull magnetoresistive sensor. For example, the magnetoresistive sensor is an X-Y dual-axis push-pull magnetoresistive sensor including an array of + X, -X, + Y, and-Y magnetoresistive sensing units. Or the + X, -X, + Z and-Z magnetoresistive sensing unit arrays form an X-Z biaxial push-pull magnetoresistive sensor. Or the + Y, -Y, + Z and-Z magnetoresistive sensing unit arrays form a Y-Z biaxial push-pull magnetoresistive sensor. Or the + X, -X, + Y and-Y magnetoresistive sensing unit array flux concentrators form a Z-axis composite push-pull magnetoresistive sensor.

The optional push-pull magnetoresistive sensor is a three-axis push-pull magnetoresistive sensor. For example, the magnetoresistive sensor is an X-Y-Z three-axis push-pull magnetoresistive sensor including an array of + X, -X, + Y, -Y, + Z, and-Z magnetoresistive sensing units.

In other embodiments, optionally, the + Z and-Z magnetoresistive sensing cell arrays form a Z-axis push-pull magnetoresistive sensor, wherein the magnetization direction of the antiferromagnetic layer in the magnetoresistive sensing cells of the + Z magnetoresistive sensing cell array is in the + Z direction, and the magnetization direction of the antiferromagnetic layer in the magnetoresistive sensing cells of the-Z magnetoresistive sensing cell array is in the-Z direction.

Fig. 6 is a schematic diagram of a single-axis push-pull magnetoresistive sensor according to an embodiment of the present invention. In this embodiment, the uniaxial magnetoresistive sensor includes four electrodes Vcc, GND, V + and V-, and further includes four magnetoresistive sensing unit arrays 200a to 200d arranged in a 2 × 2 array, and the antiferromagnetic layers of the four magnetoresistive sensing unit arrays 200a to 200d are divided into two opposite magnetic moment directions d1 and d2. The two magnetoresistive

sensing unit arrays

200a and 200d arranged diagonally in the array are used as a magnetoresistive sensing unit array, and the magnetic moment directions of the antiferromagnetic layers of the magnetoresistive sensing unit arrays are the same and are both d2; two magnetoresistive sensing unit arrays 200b and 200c arranged diagonally in the array are used as the push magnetoresistive sensing unit array, and the magnetic moment directions of the antiferromagnetic layers of the two magnetoresistive sensing unit arrays are the same and are d1. The uniaxial magnetoresistive sensor further includes push heat control layers 302 and 303 respectively overlying the two push magnetoresistive sensing cell arrays 200b and 200c, pull heat control layers 301 and 304 respectively overlying the two pull magnetoresistive

sensing cell arrays

200a and 200d, the push heat control layers 302 and 303 and the pull heat control layers 301 and 304 each being a layer of air.

In other embodiments, the push magnetoresistive sensing unit arrays may be arranged in the same row or the same column, and correspondingly, the pull magnetoresistive sensing unit arrays may be arranged in the same row or the same column; alternatively, the push magnetoresistive sensing cell array and the pull magnetoresistive sensing cell array may form a 1 × 4 or 4 × 1 array, and the two push magnetoresistive sensing cell arrays may be arranged adjacently or in a cross arrangement.

FIG. 6 illustrates a grain diagram of a uniaxial magnetoresistive sensor. In other embodiments, the magnetoresistive sensor may be a dual-axis magnetoresistive sensor, the dual-axis magnetoresistive sensor comprising: the magnetic moment direction of the antiferromagnetic layer is a push magnetic resistance sensing unit array of d1, the magnetic moment direction of the antiferromagnetic layer is a pull magnetic resistance sensing unit array of-d 1, the magnetic moment direction of the antiferromagnetic layer is a push magnetic resistance sensing unit array of d2, and the magnetic moment direction of the antiferromagnetic layer is a pull magnetic resistance sensing unit array of-d 2.

In other embodiments, the optional magnetoresistive sensor is a three-axis magnetoresistive sensor, comprising: the sensor comprises a push magnetoresistive sensing unit array with an antiferromagnetic layer magnetic moment direction being d1, a pull magnetoresistive sensing unit array with an antiferromagnetic layer magnetic moment direction being-d 1, a push magnetoresistive sensing unit array with an antiferromagnetic layer magnetic moment direction being d2, a pull magnetoresistive sensing unit array with an antiferromagnetic layer magnetic moment direction being-d 2, a push magnetoresistive sensing unit array with an antiferromagnetic layer magnetic moment direction being d3 and a pull magnetoresistive sensing unit array with an antiferromagnetic layer magnetic moment direction being-d 3.

The magnetoresistive sensor of each dimension has a full-bridge structure and correspondingly comprises 2 push magnetoresistive sensing unit arrays and 2 pull magnetoresistive sensing unit arrays; or, each dimension of the magnetoresistive sensor has a half-bridge structure, and the magnetoresistive sensor correspondingly comprises 1 push magnetoresistive sensing unit array and 1 pull magnetoresistive sensing unit array; or, the magnetoresistive sensor of each dimension has a quasi-bridge structure, and the quasi-bridge structure correspondingly comprises 1 push magnetoresistive sensing unit array and 1 pull magnetoresistive sensing unit array. In practice, regardless of the arrangement of the magnetoresistive sensors in any combination, the same laser programming writing scheme can be used for writing the magnetic moment of the antiferromagnetic layer.

Based on the same inventive concept, embodiments of the present invention provide a laser programming writing method for a magnetoresistive device, which is implemented based on a laser programming writing system, where the laser programming writing system includes a magnetic field generating device and the laser programming writing device as described in any of the above embodiments; the laser programming writing method of the laser programming writing system comprises the following steps:

in the laser programming writing stage, changing film layer parameters of the thermal control layer and/or the magnetoresistive sensor, wherein the film layer parameters comprise at least one of film layer material and film layer thickness;

the rate of change of the temperature of the magnetoresistive sensor with the laser power is adjusted and the temperature at which the same laser power is written into the magnetoresistive sensor is increased or decreased.

The selectable magnetic resistance sensor is a push-pull magnetic resistance sensor, the push-pull magnetic resistance sensor comprises a group of push magnetic resistance sensing unit arrays and pull magnetic resistance sensing unit arrays, the magnetic moment direction of an antiferromagnetic layer of the push magnetic resistance sensing unit arrays is + di, the magnetic moment direction of the antiferromagnetic layer of the pull magnetic resistance sensing unit arrays is-di, i is a positive integer, and i is more than or equal to 1 and less than or equal to 3;

the laser programming writing method further comprises: writing a magnetic moment into an antiferromagnetic layer of the push-pull magnetoresistive sensor, wherein an antiferromagnetic layer magnetic moment direction + di is written into the push magnetoresistive sensing cell array and an antiferromagnetic layer magnetic moment direction-di is written into the pull magnetoresistive sensing cell array.

The optional writing of the antiferromagnetic layer magnetic moment direction + di into the array of push magnetoresistive sensing cells comprises:

setting the magnetic field annealing power to Poven and the temperature to Tw, and carrying out magnetic field thermal annealing on the wafer in the + di direction to ensure that the magnetic moment directions of the antiferromagnetic layers of each magnetoresistive sensing unit array are + di; alternatively, setting the laser power to P (+ di) and the temperature to Tdi, a + di-directional magnetic field is generated to write a + di-directional magnetic moment in the antiferromagnetic layer of the magnetoresistive sensing cell array.

The selectively writing an antiferromagnetic layer magnetic moment direction-di into the array of magnetoresistive sensing cells includes:

setting the magnetic field annealing power to Poven and the temperature to Tw, and carrying out magnetic field thermal annealing in the-di direction on the wafer to enable the magnetic moment direction of the antiferromagnetic layer of each magnetoresistive sensing unit array to be-di; alternatively, setting the laser power to P (-di) and the temperature to Tdi, a-di-directional magnetic field is generated to write a-di-directional magnetic moment into the antiferromagnetic layer of the magnetoresistive sensing cell array.

Optional Td1< Td2< Td3.

Optional Tb < Td1< Td2< Td3< Td, where Tb is a writing temperature of the magnetoresistive sensing unit array and Td is a damage temperature of the magnetoresistive sensing unit array. It is understood that d1, d2 and d3 represent any of the x, y and z axes and include axial directions relative to the front and back directions.

A three-axis magnetic field writing system, i.e., a laser programming writing system, is shown in fig. 7A, and includes an X-axis coil 5 (1) for generating an X magnetic field 6 and an-X magnetic field 6 (1), a Z-axis coil 5 (5) for generating a Z magnetic field 6 (4) and a-Z magnetic field 6 (5), a Y-axis coil for generating a Y magnetic field 6 (2) and a-Y magnetic field 6 (3), a d1 push/pull magnetoresistive sensing cell array 11 having a magnetic moment direction d1, an adjacent d2 push/pull magnetoresistive sensing cell array 12 having a magnetic moment direction d2, and corresponding 41 and 42 being a d1 push/pull thermal control layer and a d2 pull/push thermal control layer, respectively.

During laser writing programming, the laser spot 8 writes on the surfaces of the thermal control layers 41 and 42 along the direction 9, so that the d1 push/pull magnetoresistive sensing unit array 11 writes in a magnetic field 13 (0); the write process temperature is as in fig. 7B. When the d1 push/pull magnetoresistive sensing unit array is written by laser power P (+ d 1), the magnetoresistive sensing unit temperature Tw (d 1) | P (+ d 1) of the array is between the blocking temperature Tb of the antiferromagnetic AF layer and the destruction temperature Td of the magnetoresistive sensing unit. And starting the magnetic field generating device to generate a magnetic field in the d1 direction, and writing magnetic moment into the antiferromagnetic layer in the cooling process.

In addition, since the adjacent d2 magnetoresistive sensing units and the d1 magnetoresistive sensing unit array do not need to be thermally isolated by a large interval (> 50 um), the adjacent d2 magnetoresistive sensing units have the opportunity to be heated, and the temperature thereof is Tw (d 2) | P (+ d 1), which depends on the thermal conductivity of the d2 magnetoresistive sensing units and the d1 magnetoresistive sensing units, is optionally lower than Tb, and actually can be between Tb and Td. Based on this, the selectable laser wavelengths are: 100nm-3000nm, so that the design of the laser write programming scanning sequence and the thermal conductivity between the magnetoresistive sensing unit arrays can be met.

For example, the writing of the antiferromagnetic layer magnetic moment directions + d and-d of the uniaxial push-pull magnetoresistive sensor may include two steps: 1) + d-push the writing of the antiferromagnetic layer magnetic moment direction + d in the magnetoresistive sensing unit array; 2) Writing of the antiferromagnetic layer magnetic moment direction-d in the array of d magnetoresistive sensing cells.

The optional 1) + d write of the antiferromagnetic layer magnetic moment direction + d in the magnetoresistive sensing cell array includes the following 3 ways:

firstly, referring to fig. 8A, a single-axis push-pull type magnetoresistive sensor is placed in a magnetic field annealing furnace 7, the thermal power of the magnetic field annealing furnace 7 is Poven, the temperature is Tw, a magnetic field 6 in the + d direction is generated by a magnetic field generating device 5 (1), the wafer is subjected to magnetic field thermal annealing in the + d direction, so that both the + d push magnetoresistive sensing cell array 11 and the-d pull magnetoresistive sensing cell array 12 on the substrate 3 obtain a magnetic moment 13 (0) in the + d direction, and the push thermal control layer 41 and the pull thermal control layer 42 do not function; the temperature profile of the single-axis push-pull magnetoresistive sensor at this time is as shown in fig. 8B, where Tw (+ d) | P (open) = Tw (-d) | P (open), that is, the temperature rise Tw (+ d) | P (open) of the + d-push magnetoresistive sensing cell array 11 is equal to the temperature rise Tw (-d) | P (open) of the-d-push magnetoresistive sensing cell array 12, and the temperature of the magnetoresistive sensing cell array is between Tb and Td.

Secondly, referring to fig. 9A, the single-axis push-pull type magnetoresistive sensor is placed in the magnetic field generating device 5 (1), the magnetic field generating device 5 (1) generates the + d-direction magnetic field 6, the laser power of the magnetic field generating device 5 (1) is set to be P (+ d) and the temperature is Tw, the laser spot 8 generated by the magnetic field generating device 5 (1) scans the + d push magnetoresistive sensing unit array 11 and the-d pull magnetoresistive sensing unit array 12 along the direction 9, so that the + d-direction magnetic field 13 (0) is written into each magnetoresistive sensing unit array on the substrate 3, and the push heat control layer 41 and the pull heat control layer 42 do not function; at this time, the temperature curve of the single-axis push-pull type magnetoresistive sensor is as shown in fig. 9B, where Tb < Tw (+ d) | P (+ d) | Tw (-d) | P (+ d) < Td, i.e., under the same laser power P (+ d), the temperature rise Tw (+ d) | P (+ d) of the + d-push magnetoresistive sensing unit array 11 is slower than the temperature rise Tw (-d) | P (+ d) of the-d-push magnetoresistive sensing unit array 12, and the temperature of the magnetoresistive sensing unit array is between Tb and Td.

Third, referring to fig. 10A, the single-axis push-pull magnetoresistive sensor is placed in the magnetic field generating device 5 (1), the magnetic field generating device 5 (1) generates the + d direction magnetic field 6, the laser power of the magnetic field generating device 5 (1) is set to P (+ d) and the temperature is set to Tw, then the laser spot 8 generated by the magnetic field generating device 5 (1) scans the + d push magnetoresistive sensing unit array 11 along the direction 9, so that the + d push magnetoresistive sensing unit array 11 on the substrate 3 writes the + d direction magnetic field 13 (0), and the push heat control layer 41 and the pull heat control layer 42 do not function; the temperature curve of the single-axis push-pull magnetoresistive sensor at this time is shown in fig. 12, where the temperature rise Tw (+ d) | P (+ d) of the + d push magnetoresistive sensing cell array 11 and the temperature rise Tw (-d) | P (+ d) of the-d push magnetoresistive sensing cell array 12 are room temperature Tr.

The writing of the magnetic moment direction-d of the antiferromagnetic layer in the optional 2) -d magnetoresistive sensing unit array comprises the following 3 ways:

first, referring to fig. 11A, a laser spot 8 scans in a direction 9 + d to push a magnetoresistive sensing unit array 11 and a-d magnetoresistive sensing unit array 12, and a laser power of a magnetic field generating device 5 (1) is set to be P (-d) and a temperature is set to be Tw, then the magnetic field generating device 5 (1) generates a-d-direction magnetic field 6 (0), and then the-d magnetoresistive sensing unit array 12 is written into a-d-direction magnetic field 13 (1); at this time, as shown in fig. 11B, in the temperature profile of the single-axis push-pull type magnetoresistive sensor, tr < Tw (+ d) | P (-d) < Tb < Tw (-d) | P (-d) < Td, tr is the room temperature, where + d pushes the temperature rise Tw (+ d) | P (-d) of the magnetoresistive sensing cell array 11, -d pulls the temperature rise Tw (-d) | P (-d) of the magnetoresistive sensing cell array 12.

In a second mode, referring to fig. 12A, the laser spot 8 scans the-d-push magnetoresistive sensing cell array 12 along the direction 9, the laser power of the magnetic field generating device 5 (1) is set to be P (-d) and the temperature is set to be Tw, the magnetic field generating device 5 (1) generates a-d-direction magnetic field 6 (0), the-d-push magnetoresistive sensing cell array 12 is written into the-d-direction magnetic field 13 (1), and the magnetic moment of the adjacent + d-push magnetoresistive sensing cell array 11 is not affected; the temperature curve is shown in fig. 12B, tr < Tw (+ d) | P (-d) < Tb < Tw (-d) | P (-d) < Td, the temperature is maintained at Tw (+ d) | P (-d), -temperature rise Tw (-d) | P (-d) of the d resistive sensing cell array 12, and Tr is room temperature.

For example, the writing of the antiferromagnetic layer magnetic moment directions + d and-d of the dual-axis push-pull magnetoresistive sensor may include four steps: 1) + d1 push-write of the antiferromagnetic layer magnetic moment direction + d1 in the magnetoresistive sensing unit array; 2) -writing of a magnetic moment direction-d 1 of the antiferromagnetic layer in the array of magnetoresistive sensing cells d 1; 3) + d 2-push writing of the antiferromagnetic layer magnetic moment direction + d2 in the magnetoresistive sensing unit array; 4) -d2 writing of the antiferromagnetic layer magnetic moment direction-d 2 in the array of magnetoresistive sensing cells.

The writing of the magnetic moment direction + d1 of the antiferromagnetic layer in the 1) + d1 push magnetoresistive sensing unit array optionally includes the following 3 ways:

first, referring to fig. 13A, a magnetic field annealing furnace 7 is used, the thermal power of the magnetic field annealing furnace 7 is Poven, the temperature is Tw, and a magnetic field generating device 5 (1) thereof is used to generate a magnetic field 6 in the + d1 direction, so that the + d1 push magnetoresistive sensing cell array 11 and the-d 1 pull magnetoresistive sensing cell array 12, and the + d2 push magnetoresistive sensing cell array 13 and the-d 2 pull magnetoresistive sensing cell array 14 on the substrate 3 all obtain a magnetic moment 13 (0) in the + d1 direction, and the + d1 push thermal control layer 41, the-d 1 pull thermal control layer 42, the + d2 push thermal control layer 43, and the-d 2 thermal control layer 44 do not function; the temperature curve is shown in fig. 13B, the temperature rise of the + d1 push magnetoresistive sensing unit array 11 is Tw (+ d 1) | P (ven), -the temperature rise Tw (-d 1) | P (ven) of the d1 pull magnetoresistive sensing unit array 12, the temperature rise of the + d2 push magnetoresistive sensing unit array 13 is Tw (+ d 2) | P (ven), -the temperature rise Tw (-d 2) | P (oven) of the d2 pull magnetoresistive sensing unit array 14 satisfies the relationship: tb < Tw (+ d 1) | P (ven) = Tw (-d 1) | P (ven) = Tw (+ d 2) | P (ven) = Tw (-d 2) | P (ven) < Td, and the temperature of the magnetoresistive sensing unit array is between Tb and Td.

Mode two, referring to fig. 14A, the magnetic field generating device 5 (1) generates a + d1 direction magnetic field 6, the laser power of the magnetic field generating device 5 (1) is set to be P (+ d 1) and the temperature is Tw, then the laser spot 8 generated by the magnetic field generating device 5 (1) scans the + d1& + d2 push magnetoresistive sensing cell array 11&13, -d1& -d2 push magnetoresistive sensing cell array 12&14 along the direction 9, the magnetic field generating device 5 (1) generates a + d1 direction magnetic field 6, and then the + d1 direction magnetic field 13 (0) is written into each of the magnetoresistive sensing cell arrays 11 to 14; as shown in fig. 14B, tb < Tw (+ d 1) | P (+ d 1) | T (-d 1) | P (+ d 1) < Tw (+ d 2) | P (+ d 1) < Tw (-d 2) | P (+ d 1) < Td, that is, under the same laser power P (+ d 1), the temperature rise Tw (+ d 1) | P (+ d 1) | of the + d1 push magnetoresistive sensing cell array 11, the temperature rise Tw (-d 1) | P (+ d 1) | of the d1 pull magnetoresistive sensing cell array 12, the temperature rise Tw (-d 1) | P (+ d 1), + d2 push magnetoresistive sensing cell array 13, and the temperature rise Tw (+ d 2) | P (+ d 1) of the-d 2 pull magnetoresistive sensing cell array 14 are arranged in order from slow to fast.

Third, referring to fig. 15A, when the laser spot 8 scans the + d1 push magnetoresistive sensing cell array 11 along the direction 9, the magnetic field generating device 5 (1) generates the + d1 magnetic field 6, the + d1 push magnetoresistive sensing cell array 11 writes the + d1 magnetic field 13 (0) in the direction of + d1, the temperature curve of the + d1 push magnetoresistive sensing cell array 11 is Tw (+ d 1) | P (+ d 1), the temperature of the adjacent-d 1 pull magnetoresistive sensing cell array 12 is Tw (-d 1) | P (+ d 1), and Tw (+ d 1) | P (+ d 1) is slower than the value of the + Tw (-d 1) | P (+ d 1), which may result in magnetic moment writing of the magnetoresistive sensing cells.

Optional 2) -d1 writing of the antiferromagnetic layer magnetic moment direction-d 1 in the magnetoresistive sensing cell array includes the following 2 ways:

mode one, referring to fig. 16A, the laser spot 8 scans in the direction 9 + d1 to push the magnetoresistive sensing cell array 11 and-d 1 to push the magnetoresistive sensing cell array 12, + d2 to push the magnetoresistive sensing cell array 13 and-d 2 to push the magnetoresistive sensing cell array 14, and the magnetic field generating device 5 (1) generates-d 1 to magnetic field 6 (0), wherein-d 1 to push the magnetoresistive sensing cell array 12, + d2 to push the magnetoresistive sensing cell array 13 and-d 2 to pull the magnetoresistive sensing cell array 14 all write-d 1 to magnetic field 13 (1); the temperature profile of the magnetoresistive sensor is shown in fig. 16B, where Tr < Tw (+ d 1) | P (-d 1) < Tb < Tw (-d 1) | P (-d 1) < Tw (+ d 2) | P (-d 1) < Tw (-d 2) | P (-d 1) < Td.

Secondly, referring to fig. 17A, the laser spot 8 scans the magnetic field generating device 5 (1) along the direction 9-d 1 to pull the magnetoresistive sensing unit array 12, and the magnetic field generating device 5 (1) generates a-d 1 to magnetic field 6 (0), so that only the-d 1 to pull the magnetoresistive sensing unit array 12 writes the-d 1 to the magnetic field 13 (1), the magnetic moment of the adjacent + d1 to push the magnetoresistive sensing unit array 11 is not affected, and the magnetic moment of the adjacent + d2 to push the magnetoresistive sensing unit array 13 may be affected; the temperature profile is shown in FIG. 17B, where Tr < Tw (+ d 1) | P (-d 1) < Tb < Tw (-d 1) | P (-d 1) < Tw (+ d 2) | P (-d 1) < Td.

The optional 3) + d2 write of the antiferromagnetic layer magnetic moment direction + d2 in the magnetoresistive sensing cell array includes the following 2 ways:

first, referring to fig. 18A, the laser spot 8 scans the + d1 push mr sensing unit array 11 and the-d 1 pull mr sensing unit array 12, and the + d2 push mr sensing unit array 13 and the-d 2 pull mr sensing unit array 14 along the direction 9, the magnetic field generating device (not shown) generates the + d2 direction magnetic field 6 (2), and only the + d2 push mr sensing unit array 13 and the-d 2 pull mr sensing unit array 14 write the + d2 direction magnetic field 13 (2); the temperature profile of the magnetoresistive sensor is shown in fig. 18B, where Tr < Tw (+ d 1) | P (+ d 2) < Tw (-d 1) | P (+ d 2) < Tb < Tw (+ d 2) | P (+ d 2) < Tw (-d 2) | P (+ d 2) < Td.

In a second mode, referring to fig. 19A, the laser spot 8 scans the + d2 push magnetoresistive sensing unit array 13 along the direction 9, the magnetic field generating device generates a + d2 to the magnetic field 6 (2), only the + d2 push magnetoresistive sensing unit array 13 writes the + d2 to the magnetic field 13 (2), the magnetic moment of the adjacent-d 1 pull magnetoresistive sensing unit array 12 is not affected, and the magnetic moment of the adjacent-d 2 push magnetoresistive sensing unit array 14 is affected; the temperature profiles are as shown in FIG. 19B, tr tow Tw (-d 1) | P (+ d 2) < Tb < Tw (+ d 2) | P (+ d 2) < Tw (-d 2) | P (+ d 2) < Td.

Optional 4) -d2 writing of the antiferromagnetic layer magnetic moment direction-d 2 in the magnetoresistive sensing cell array includes the following 2 ways:

first, referring to fig. 20A, the laser spot 8 scans in the direction 9 + d1 to push the magnetoresistive sensing cell array 11 and-d 1 to push the magnetoresistive sensing cell array 12, + d2 to push the magnetoresistive sensing cell array 13 and-d 2 to push the magnetoresistive sensing cell array 14, the magnetic field generating device (not shown here) generates-d 2 to the magnetic field 6 (3), and only-d 2 to write-d 2 to the magnetic field 13 (3) by the-d 2 to push the magnetoresistive sensing cell array 14; the temperature profile is shown in FIG. 20B, in which Tr < Tw (+ d 1) | P (-d 2) < Tw (-d 1) | P (-d 2) < Tw (+ d 2) | P (-d 2) < Tb < Tw (-d 2) | P (-d 2) < Td.

Second, referring to fig. 21A, the laser spot 8 scans the d 2-less magnetoresistive sensing cell array 14 along the direction 9, the magnetic field generating device generates a d 2-directional magnetic field 6 (3), only the d 2-less magnetoresistive sensing cell array 14 writes a d 2-directional magnetic moment 13 (3), the magnetic moment of the adjacent + d 2-push magnetoresistive sensing cell array 13 is not affected, and the temperature profile thereof is as shown in fig. 21B, tr < Tw (+ d 2) | P (-d 2) < Tb < Tw (-d 2) | P (-d 2) < Td.

For example, the writing of the antiferromagnetic layer magnetic moment directions + d and-d of the tri-axial push-pull magnetoresistive sensor may comprise six steps: 1) + d1 push-write of the antiferromagnetic layer magnetic moment direction + d1 in the magnetoresistive sensing unit array; 2) -writing of a magnetic moment direction-d 1 of the antiferromagnetic layer in the array of magnetoresistive sensing cells d 1; 3) + d 2-push writing of the antiferromagnetic layer magnetic moment direction + d2 in the magnetoresistive sensing unit array; 4) -writing of a magnetic moment direction-d 2 of the antiferromagnetic layer in the array of magnetoresistive sensing cells; 5) + d 3-push writing in the antiferromagnetic layer magnetic moment direction + d3 in the magnetoresistive sensing unit array; 6) D3 writing of the antiferromagnetic layer magnetic moment direction-d 3 in the array of magnetoresistive sensing cells.

first, as shown in fig. 22A, a magnetic field annealing furnace 7 is used, and a + d1 direction magnetic field 6 is generated by its magnetic field generating device 5 (1), and a + d1 push magnetoresistive sensing cell array 11 and a-d 1 pull magnetoresistive sensing cell array 12, a + d2 push magnetoresistive sensing cell array 13 and a-d 2 pull magnetoresistive sensing cell array 14, which are located above a substrate 3, and a + d3 push magnetoresistive sensing cell array 15 and a-d 3 pull magnetoresistive sensing cell array 16 each obtain a + d1 direction magnetic moment 13 (0), a + d1 push thermal control layer 41 and a-d 1 pull thermal control layer 42, a + d2 push thermal control layer 43 and a-d 2 push thermal control layer 44, a + d3 push thermal control layer 45 and a-d 3 thermal control layer 46 do not function; as shown in fig. 22B, tb < Tw (+ d 1) | P (ven) = Tw (-d 1) | P (ven) = Tw (+ d 2) | P (oven) = Tw (-d 2) | P (oven) = Tw (+ d 3) | P (oven) = Tw (-d 3) | P (oven) < Td.

Mode two, as shown in fig. 23A, the laser spot 8 scans in the direction 9 + d1 to push the magnetoresistive sensing cell array 11 and-d 1 to push the magnetoresistive sensing cell array 12, + d2 to push the magnetoresistive sensing cell array 13 and-d 2 to push the magnetoresistive sensing cell array 14, + d3 to push the magnetoresistive sensing cell array 15 and-d 3 to push the magnetoresistive sensing cell array 16, the magnetic field generating device 5 (1) generates the + d1 to magnetic field 6, and all the magnetoresistive sensing cells write the + d1 to magnetic moment 13 (0); the temperature profile is shown in FIG. 23B, wherein Tb < Tw (+ d 1) | P (+ d 1) < Tw (-d 1) | P (+ d 1) < Tw (+ d 2) | P (+ d 1) < Tw (-d 2) | P (+ d 1) < Tw (+ d 3) | P (+ d 1) < Tw (-d 3) | P (+ d 1) < Td, i.e. under the same laser power P (+ d 1), the + d1 push magnetoresistive sensing unit temperature rises Tw (+ d 1) | P (+ d 1), -d1 push magnetoresistive sensing unit temperature rises Tw (-d 1) | P (+ d 1), -d2 push magnetoresistive sensing unit temperature rises Tw (+ d 2) | P (+ d 1), -d2 push magnetoresistive sensing unit temperature rises Tw (-d 2) | P (+ d 1), -d3 push magnetoresistive sensing unit temperature rises Tw (+ d 3) | P (+ d 1) and-d 3 push magnetoresistive sensing unit temperature rises Tw (-d 3) | P (+ d 1) are arranged in order from slow to fast.

Third, as shown in fig. 24A, the laser spot 8 scans the + d1 push magnetoresistive sensing cell array 11 along the direction 9, the magnetic field generating device 5 (1) generates + d1 to write a + d1 direction magnetic field 13 (0) to the magnetic field 6, + d1 push magnetoresistive sensing cell array 11, as shown in fig. 24B, the temperature of + d1 push magnetoresistive sensing cell array 11 is Tw (+ d 1) | P (+ d 1), and the temperature of the adjacent-d 1 push magnetoresistive sensing cell array 12 is Tw (-d 1) | P (+ d 1), which may cause magnetic moment writing of other magnetoresistive sensing cells.

The writing of the antiferromagnetic layer magnetic moment direction-d 1 in the optional 2) -d1 magnetoresistive sensing cell array includes the following 2 ways:

first, as shown in fig. 25A, the laser spot 8 scans in the direction 9 + d1 to push the magnetoresistive sensing cell array 11 and the-d 1 pull magnetoresistive sensing cell array 12, + d2 to push the magnetoresistive sensing cell array 13 and the-d 2 pull magnetoresistive sensing cell array 14, + d3 to push the magnetoresistive sensing cell array 15 and the-d 3 pull magnetoresistive sensing cell array 16, the magnetic field generating device 5 (1) generates-d 1 to the magnetic field 6 (1), and only the-d 1 pull magnetoresistive sensing cell array 12, + d2 to push the magnetoresistive sensing cell array 13, -d2 pull magnetoresistive sensing cell array 14, + d3 to push the magnetoresistive sensing cell array 15 and the-d 3 pull magnetoresistive sensing cell array 16 write-d 1 to the magnetic field 13 (1); the temperature profile is shown in FIG. 25B, in which Tr < Tw (+ d 1) | P (-d 1) < Tb < Tw (-d 1) | P (-d 1) < Tw (+ d 2) | P (-d 1) < Tw (-d 2) | P (-d 1) < Tw (+ d 3) | P (-d 1) < Tw (-d 3) | P (-d 1) < Td.

In a second mode, as shown in fig. 26A, the laser spot 8 scans the magnetic field generating device 5 (1) along the direction 9-d 1 to pull the magnetoresistive sensing cell array 12, the magnetic field generating device 5 (1) generates a-d 1 to the magnetic field 6 (1), only the-d 1 pulls the magnetoresistive sensing cell array 12 to write the-d 1 to the magnetic field 13 (1), the magnetic moment of the adjacent + d1 push magnetoresistive sensing cell array 11 is not affected, and the magnetic moment of the adjacent + d2 push magnetoresistive sensing cell array 13 is affected; the temperature profile is shown in FIG. 26B, where Tr < Tw (+ d 1) | P (-d 1) < Tb < Tw (-d 1) | P (-d 1) < Tw (+ d 2) | P (-d 1) < Td.

first, as shown in fig. 27A, the laser spot 8 scans in the direction 9 + d1 to push the magnetoresistive sensing cell array 11 and the-d 1-push magnetoresistive sensing cell array 12, + d2 to push the magnetoresistive sensing cell array 13 and the-d 2-push magnetoresistive sensing cell array 14, + d3 to push the magnetoresistive sensing cell array 15 and the-d 3-push magnetoresistive sensing cell array 16, the magnetic field generating device (not shown here) generates + d2 to the magnetic field 6 (2), only + d2 to push the magnetoresistive sensing cell array 13 and the-d 2-push magnetoresistive sensing cell array 14, + d3 to push the magnetoresistive sensing cell array 15 and the-d 3-push magnetoresistive sensing cell array 16 write + d2 to the magnetic field 13 (2); the temperature profile is shown in fig. 27B, and Tr < Tw (+ d 1) | P (+ d 2) < Tw (-d 1) | P (+ d 2) < Tb < Tw (+ d 2) | P (+ d 2) | < Tw (-d 2) | P (+ d 2) < Tw (+ d 3) | P (+ d 2) < Tw (-d 3) | P (+ d 2) | Td.

In a second mode, as shown in fig. 28A, the laser spot 8 scans the + d2 push magnetoresistive sensing unit array 13 along the direction 9, the magnetic field generating device generates the + d2 to the magnetic field 6 (2), only the + d2 push magnetoresistive sensing unit array 13 writes the + d2 to the magnetic field 13 (2), the magnetic moment of the adjacent-d 1 push magnetoresistive sensing unit array 12 is not affected, and the magnetic moment of the adjacent-d 2 push magnetoresistive sensing unit array 14 is affected; the temperature profile is shown in FIG. 28B, in which Tr < Tw (-d 1) | P (+ d 2) < Tb < Tw (+ d 2) | P (+ d 2) < Tw (-d 2) | P (+ d 2) < Td.

mode one, as shown in fig. 29A, the laser spot 8 scans in the direction 9 + d1 to push the magnetoresistive sensing cell array 11 and the-d 1-push magnetoresistive sensing cell array 12, + d2 to push the magnetoresistive sensing cell array 13 and the-d 2-push magnetoresistive sensing cell array 14, + d3 to push the magnetoresistive sensing cell array 15 and the-d 3-push magnetoresistive sensing cell array 16, and the magnetic field generating device (not shown here) generates-d 2 to the magnetic field 6 (3), only the-d 2-push magnetoresistive sensing cell array 14, + d3 to push the magnetoresistive sensing cell array 15 and the-d 3-push magnetoresistive sensing cell array 16 write-d 2 to the magnetic field 13 (3); the temperature profile is shown in FIG. 29B, in which Tr < Tw (+ d 1) | P (-d 2) < Tw (-d 1) | P (-d 2) < Tw (+ d 2) | P (-d 2) < Tb < Tw (-d 2) | P (-d 2) < Tw (+ d 3) | P (-d 2) < Tw (-d 3) | P (-d 2) < Td.

In a second mode, as shown in fig. 30A, the laser spot 8 scans the d 2-pull magnetoresistive sensing cell array 14 along the direction 9, the magnetic field generating device generates a d 2-directional magnetic field 6 (3), only the d 2-pull magnetoresistive sensing cell array 14 writes a d 2-directional magnetic moment 13 (3), the magnetic moment of the adjacent + d 2-push magnetoresistive sensing cell array 13 is not affected, and the magnetic moment of the adjacent + d 3-push magnetoresistive sensing cell array 15 is affected; the temperature profile is shown in FIG. 30B, where Tr < Tw (+ d 2) | P (-d 2) < Tb < Tw (-d 2) | P (-d 2) < Td < Tw (+ d 3) | P (-d 2) < Td.

The optional writing of 5) + d3 push magnetoresistive sensing unit array with antiferromagnetic layer magnetic moment direction + d3 includes the following 2 ways:

mode one, as shown in fig. 31A, the laser spot 8 scans in the direction 9 + d1 to push the magnetoresistive sensing cell array 11 and-d 1 to push the magnetoresistive sensing cell array 12, + d2 to push the magnetoresistive sensing cell array 13 and-d 2 to push the magnetoresistive sensing cell array 14, + d3 to push the magnetoresistive sensing cell array 15 and-d 3 to push the magnetoresistive sensing cell array 16, the magnetic field generating device 5 (5) generates a + d3 to magnetic field 6 (4), and only the + d3 push magnetoresistive sensing cell array 15 and the-d 3 to pull the magnetoresistive sensing cell array 16 are both written with the + d3 to magnetic moment 13 (4); the temperature profile is shown in fig. 31B, in which Tr < Tw (+ d 1) | P (+ d 3) < Tw (-d 1) | P (+ d 3) < Tw (+ d 2) | P (+ d 3) < Tw (-d 2) | P (+ d 3) < Tb < Tw (+ d 3) | P (+ d 3) < Tw (-d 3) | P (+ d 3) < Td.

In a second mode, as shown in fig. 32A, the laser spot 8 scans the + d3 push magnetoresistive sensing unit array 15 along the direction 9, the magnetic field generating device 5 (5) generates the + d3 to the magnetic field 6 (4), only the + d3 push magnetoresistive sensing unit array 15 writes the + d3 to the magnetic moment 13 (4), the magnetic moment of the adjacent-d 2 push magnetoresistive sensing unit array 14 is not affected, and the magnetic moment of the adjacent-d 3 pull magnetoresistive sensing unit 16 is affected; the temperature profile is shown in fig. 32B, where Tr < Tw (-d 2) | P (+ d 3) < Td < Tw (+ d 3) | P (+ d 3) < Tw (-d 3) | P (+ d 3) < Td.

Alternative 6) -d3 the writing of the antiferromagnetic layer magnetic moment direction-d 3 in the array of magnetoresistive sensing cells includes the following 2 ways:

first, as shown in fig. 33A, the laser spot 8 scans in the direction 9 + d1 to push the magnetoresistive sensing cell array 11 and the-d 1 pull magnetoresistive sensing cell array 12, + d2 to push the magnetoresistive sensing cell array 13 and the-d 2 pull magnetoresistive sensing cell array 14, + d3 to push the magnetoresistive sensing cell array 15 and the-d 3 pull magnetoresistive sensing cell array 16, the magnetic field generating device 5 (5) generates-d 3 to the magnetic field 6 (5), and only the-d 3 pull magnetoresistive sensing cell array 16 writes-d 3 to the magnetic moment 13 (5); the temperature profile is shown in FIG. 33B, in which Tr < Tw (+ d 1) | P (-d 3) < Tw (-d 1) | P (-d 3) < Tw (+ d 2) | P (-d 3) < Tw (-d 2) | P (-d 3) < Tw (+ d 3) | P (-d 3) < Tw (-d 3) | P (-d 3) < Td.

In a second mode, as shown in fig. 34A, the laser spot 8 scans the magnetoresistive sensing cell array 16 along the direction 9, d3 is generated by the magnetic field generating device 5 (5) to the magnetic field 6 (5), only d3 is written into the magnetoresistive sensing cell array 16 to the magnetic moment 13 (5), and the adjacent magnetic moment of the magnetoresistive sensing cell array 15 pushed by + d3 is not affected; the temperature profile is shown in FIG. 34B, in which Tr < Tw (+ d 3) | P (-d 3) < Td < Tw (-d 3) | P (-d 3) < Td.

It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious modifications, rearrangements, combinations and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A laser programmed writing apparatus for a magnetoresistive device, comprising: the sensor comprises a substrate, a magnetoresistive sensor and a thermal control layer which are sequentially stacked, wherein a non-magnetic insulating layer for electrical isolation is arranged between the magnetoresistive sensor and the thermal control layer, the magnetoresistive sensor is composed of a magnetoresistive sensing unit, and the magnetoresistive sensing unit is a multilayer thin film stacking structure with an antiferromagnetic layer;

the laser programming writing device is used for changing parameters of the film layer of the thermal control layer and/or the magneto-resistive sensor in a laser programming writing stage so as to adjust the change rate of the temperature of the magneto-resistive sensor along with the laser power and increase or decrease the temperature of the magneto-resistive sensor written by the same laser power, wherein the parameters of the film layer comprise at least one of the material and the thickness of the film layer.

2. The laser-programmed writing apparatus of claim 1, wherein the magneto-resistive sensor is a giant magneto-resistive GMR sensor, a tunnel magneto-resistive TMR sensor, or an anisotropic magneto-resistive AMR sensor.

3. The laser programming writing device of claim 1, wherein the multi-layered thin film stack structure includes a seed layer, the antiferromagnetic layer, a free layer, a top electrode layer, and a cap layer sequentially stacked in a direction from the substrate to the thermal control layer, and a first insulating layer is disposed between the substrate and the seed layer;

the laser programming writing device is used for increasing or reducing the temperature of the same laser power for writing the magnetoresistive sensor by changing the materials of at least one film layer of the thermal control layer, the first insulating layer, the seed layer, the top electrode layer and the cap layer; and/or the presence of a gas in the atmosphere,

the laser programming writing device is used for increasing or reducing the temperature of the same laser power for writing the magnetoresistive sensor by changing the thickness of at least one film layer of the thermal control layer, the first insulating layer, the seed layer, the top electrode layer and the cap layer.

4. The laser-programmed writing apparatus of claim 1, wherein the magnetoresistive sensor is a push-pull magnetoresistive sensor, the push-pull magnetoresistive sensor being composed of an array of push magnetoresistive sensing units and an array of pull magnetoresistive sensing units, both the array of push magnetoresistive sensing units and the array of pull magnetoresistive sensing units being composed of magnetoresistive sensing units.

5. The laser-programmed writing apparatus of claim 4, wherein the push-pull magnetoresistive sensor employs a full-bridge configuration, a half-bridge configuration, or a quasi-bridge configuration.

6. The laser-programmed writing apparatus of claim 4, wherein the push-pull magnetoresistive sensor is a single-axis push-pull magnetoresistive sensor, a dual-axis push-pull magnetoresistive sensor, or a three-axis push-pull magnetoresistive sensor.

7. The laser-programmed write apparatus of claim 1, wherein the thermal control layer comprises a non-magnetic laser low absorption coefficient material or a laser high absorption coefficient material, wherein the laser low absorption coefficient material comprises at least one of tantalum, titanium, copper, molybdenum, gold, silver, aluminum, platinum, and tin, and the laser high absorption coefficient material comprises at least one of zirconium oxide, titanium oxide, carbon film, phosphate, and titanium aluminum nitride.

8. The laser programming writer of claim 1 wherein the constituent material of the thermal control layer comprises carbon black, a non-magnetic laser absorbing resin or a non-magnetic laser absorbing paint.

9. The laser programming writing device of claim 1, wherein the laser has a wavelength in a range of 100nm to 3000 nm.

10. A laser programmed writing method for a magnetoresistive device, realized by a laser programmed writing system, characterized in that the laser programmed writing system comprises a magnetic field generating device and a laser programmed writing device according to any of claims 1-9;

the laser programming writing method of the laser programming writing system comprises the following steps:

and adjusting the change rate of the temperature of the magneto-resistive sensor along with the laser power, and increasing or decreasing the temperature written into the magneto-resistive sensor by the same laser power.

11. The laser programming writing method of claim 10, wherein the magnetoresistive sensor is a push-pull magnetoresistive sensor, the push-pull magnetoresistive sensor including a push magnetoresistive sensing cell array and a pull magnetoresistive sensing cell array, an antiferromagnetic layer magnetic moment direction of the push magnetoresistive sensing cell array being + di, an antiferromagnetic layer magnetic moment direction of the pull magnetoresistive sensing cell array being-di, i being a positive integer and 1 ≤ i ≤ 3;

the laser programming writing method further comprises: writing a magnetic moment to an antiferromagnetic layer of the push-pull magnetoresistive sensor, wherein the antiferromagnetic layer magnetic moment direction + di is written into the push magnetoresistive sensing cell array and the antiferromagnetic layer magnetic moment direction-di is written into the pull magnetoresistive sensing cell array.

12. The laser programming writing method of claim 11, wherein writing the antiferromagnetic layer magnetic moment direction + di in the array of magnetoresistive sensing cells comprises:

setting the magnetic field annealing power to Poven and the temperature to Tw, and carrying out magnetic field thermal annealing on the wafer in the + di direction to ensure that the magnetic moment directions of the antiferromagnetic layers of each magnetoresistive sensing unit array are + di; or,

setting a laser power to P (+ di) and a temperature to Tdi, a + di-directional magnetic field is generated to write a + di-directional magnetic moment in an antiferromagnetic layer of the array of magnetoresistive sensing cells.

13. The laser programming writing method of claim 12, wherein writing the antiferromagnetic layer magnetic moment direction-di into the array of magnetoresistive sensing cells comprises:

setting the magnetic field annealing power to Poven and the temperature to Tw, and carrying out magnetic field thermal annealing in the-di direction on the wafer to enable the magnetic moment direction of the antiferromagnetic layer of each magnetoresistive sensing unit array to be-di; or,

setting the laser power to P (-di) and the temperature to Tdi, a-di direction magnetic field is generated to write a-di direction magnetic moment into the antiferromagnetic layer of the magnetoresistive sensing cell array.

14. The laser programming method of claim 13, wherein Td1< Td2< Td3.

15. The laser programming method of claim 14, wherein Tb < Td1< Td2< Td3< Td, where Tb is a writing temperature of the magnetoresistive sensing unit array and Td is a damage temperature of the magnetoresistive sensing unit array.