CN112928174B - Photoelectric detector of nano material modified light-transmitting film and preparation method thereof - Google Patents
Photoelectric detector of nano material modified light-transmitting film and preparation method thereof Download PDFInfo
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- 239000002086 nanomaterial Substances 0.000 title claims abstract description 67
- 238000002360 preparation method Methods 0.000 title abstract description 11
- 230000008021 deposition Effects 0.000 claims abstract description 14
- 239000000725 suspension Substances 0.000 claims abstract description 12
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 32
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 claims description 30
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 18
- 239000002131 composite material Substances 0.000 claims description 10
- 229910021389 graphene Inorganic materials 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 239000002135 nanosheet Substances 0.000 claims description 9
- 239000002238 carbon nanotube film Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 238000005259 measurement Methods 0.000 claims description 6
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 239000004332 silver Substances 0.000 claims description 6
- 239000000084 colloidal system Substances 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 4
- 239000006185 dispersion Substances 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 238000002207 thermal evaporation Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 77
- 230000004044 response Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000005286 illumination Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052961 molybdenite Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- 229920005372 Plexiglas® Polymers 0.000 description 1
- -1 Polytetrafluoroethylene Polymers 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000013475 authorization Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000009210 therapy by ultrasound Methods 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
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Abstract
The photoelectric detector with the light-transmitting film modified by the nano material can remarkably improve the performance of the photoelectric detector, is simple to prepare and low in cost, and has wide prospects in practical application. Comprising the following steps: the device comprises a hollow groove structure, a light-transmitting film, a first nano material layer, a second nano material layer and a deposition electrode; the upper surface and the lower surface of the light-transmitting film are respectively provided with a first nano material layer and a second nano material layer, an electrode is deposited on the lower surface of the second nano material layer, and then the light-transmitting film is fixed on the hollow groove structure, so that the light-transmitting film is in a suspension state; the incident light passes through the first nano material layer, the light-transmitting film, the second nano material layer and the deposition electrode in sequence. A preparation method is also provided.
Description
Technical Field
The invention belongs to the technical field of photoelectrons and nano materials, and particularly relates to a photoelectric detector of a nano material modified light-transmitting film and a preparation method of the photoelectric detector of the nano material modified light-transmitting film.
Background
Carbon-based films, such as graphene films and carbon nanotube films, all have ultra-wide spectrum light absorption characteristics ranging from ultraviolet to terahertz, and therefore, carbon-based films can be used as photosensitive materials for wide-spectrum photodetectors. However, the carbon-based thin film itself has low light absorptivity, and the carrier lifetime is short, which results in low photodetector performance.
In recent years, nano photoelectric materials are rapidly grown, and the nano photoelectric materials have the properties of high light absorptivity, high internal quantum efficiency and the like, so that the nano photoelectric materials are modified on the surface of the carbon-based film, and the performance of the photoelectric detector of the carbon-based film can be improved. At present, the photoelectric detectors of the carbon-based thin film modified by the nano photoelectric material, which are reported at home and abroad, are all made of the nano photoelectric material to modify one surface of the carbon-based thin film, and only absorb light once by the nano photoelectric material, so that the performance of the photoelectric detectors is limited.
Disclosure of Invention
In order to overcome the defects of the prior art, the technical problem to be solved by the invention is to provide the photoelectric detector with the nano material modified light-transmitting film, which can obviously improve the performance of the photoelectric detector, is simple to prepare and low in cost, and has wide prospects in practical application.
The technical scheme of the invention is as follows: the photodetector with the light-transmitting film modified by the nano material comprises: the device comprises a hollow groove structure, a light-transmitting film, a first nano material layer, a second nano material layer and a deposition electrode;
the upper surface and the lower surface of the light-transmitting film are respectively provided with a first nano material layer and a second nano material layer, an electrode is deposited on the lower surface of the second nano material layer, and then the light-transmitting film is fixed on the hollow groove structure, so that the light-transmitting film is in a suspension state;
the incident light passes through the first nano material layer, the light-transmitting film, the second nano material layer and the deposition electrode in sequence.
The upper surface and the lower surface of the light-transmitting film are respectively provided with the first nano material layer and the second nano material layer, the deposition electrode is arranged on the lower surface of the second nano material layer, and then the light-transmitting film is fixed on the hollow groove structure, so that the light-transmitting film is in a suspension state, and incident light sequentially passes through the first nano material layer, the light-transmitting film, the second nano material layer and the deposition electrode, therefore, the light-transmitting film can absorb incident light by utilizing the nano material (the first nano material layer) on the incident surface and also can absorb transmitted light by utilizing the nano material (the second nano material layer) on the transmission surface, the light absorption for two times is realized, the performance of the photoelectric detector is obviously improved, and the light-transmitting film has simple preparation and low cost, and has wide prospect in practical application.
The preparation method of the photoelectric detector of the nanomaterial-modified light-transmitting film is also provided, and comprises the following steps:
(1) The molybdenum disulfide MoS with the concentration of 0.2mg/mL is respectively dripped on the upper surface and the lower surface of the RGO film 2 75 mu L of nano-sheet dispersion liquid to prepare MoS 2 Nanosheet double-sided RGO with MoS 2 -RGO-MoS 2 A structured composite film;
(2) Vacuum thermal evaporation method is adopted, and MoS is adopted through a mask 2 -RGO-MoS 2 Depositing Au interdigital electrodes on the surface of the composite film;
(3) Fixing the film after depositing the electrode on the insulated hollow groove to make the film in a suspension state;
(4) And combining the two ends of the interdigital electrode with copper wires by using silver colloid to perform electric measurement, wherein incident light is incident from the surface of the interdigital electrode when the detection performance is measured.
Drawings
Fig. 1 is a schematic structural view of a photodetector of a nanomaterial-modified light-transmitting film according to the present invention.
FIG. 2 shows RGO photodetector and MoS under 405nm wavelength illumination 2 -RGO-MoS 2 And (5) comparing the response rate of the photoelectric detector.
FIG. 3 shows an RGO photodetector and MoS under ultraviolet (wavelength 375 nm) light 2 -RGO-MoS 2 Photo-current contrast of the photodetector.
FIG. 4 shows an RGO photodetector and MoS under visible (532 nm wavelength) light 2 -RGO-MoS 2 Photo-current contrast of the photodetector.
FIG. 5 shows RGO photodetector and MoS under visible (wavelength 633 nm) light 2 -RGO-MoS 2 Photo-current contrast of the photodetector.
FIG. 6 shows an RGO photodetector and MoS under infrared (808 nm wavelength) illumination 2 -RGO-MoS 2 Photo-current contrast of the photodetector.
FIG. 7 shows an RGO photodetector and MoS under infrared (wavelength 1064 nm) illumination 2 -RGO-MoS 2 Photo-current contrast of the photodetector.
FIG. 8 shows an RGO photodetector and MoS under infrared (1550 nm wavelength) illumination 2 -RGO-MoS 2 Photo-current contrast of the photodetector.
Fig. 9 is a flowchart of a method of fabricating a photodetector of a nanomaterial-modified light-transmitting film in accordance with the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
In order that the present disclosure may be more fully described and fully understood, the following description is provided by way of illustration of embodiments and specific examples of the present invention; this is not the only form of practicing or implementing the invention as embodied. The description covers the features of the embodiments and the method steps and sequences for constructing and operating the embodiments. However, other embodiments may be utilized to achieve the same or equivalent functions and sequences of steps.
As shown in fig. 1, the photodetector of the nanomaterial-modified light-transmitting film comprises: the light-transmitting film comprises a hollow groove structure 1, a light-transmitting film 2, a first nano material layer 3, a second nano material layer 4 and a deposition electrode 5;
the upper surface and the lower surface of the light-transmitting film are respectively provided with a first nano material layer and a second nano material layer, an electrode is deposited on the lower surface of the second nano material layer, and then the light-transmitting film is fixed on the hollow groove structure, so that the light-transmitting film is in a suspension state;
the incident light passes through the first nano material layer, the light-transmitting film, the second nano material layer and the deposition electrode in sequence.
The upper surface and the lower surface of the light-transmitting film are respectively provided with the first nano material layer and the second nano material layer, the deposition electrode is arranged on the lower surface of the second nano material layer, and then the light-transmitting film is fixed on the hollow groove structure, so that the light-transmitting film is in a suspension state, and incident light sequentially passes through the first nano material layer, the light-transmitting film, the second nano material layer and the deposition electrode, therefore, the light-transmitting film can absorb incident light by utilizing the nano material (the first nano material layer) on the incident surface and also can absorb transmitted light by utilizing the nano material (the second nano material layer) on the transmission surface, the light absorption for two times is realized, the performance of the photoelectric detector is obviously improved, and the light-transmitting film has simple preparation and low cost, and has wide prospect in practical application. To ensure that the light-transmitting film has high optical transmittance, the film thickness is very thin, usually in the nanometer order, and the thin film generally needs to be attached to a substrate to be manufactured into a device for use. However, on the basis of the existing nano material modified light-transmitting film, a layer of nano material modified light-transmitting film is added, so that the light-transmitting film is separated from the substrate to form a self-supporting film without the substrate, and the upper surface and the lower surface of the film are exposed, so that the nano material modification on the upper surface and the lower surface can be realized. The thin film is separated from the substrate to become a complete self-supporting film, so that the process is quite difficult, and a unique preparation method is required, for example, the inventor has obtained patent authorization of a preparation method of a self-supporting reduced graphene oxide film, and patent number ZL 201610073189.6.
Preferably, the light-transmitting film is a Reduced Graphene Oxide (RGO) (Reduced Graphene Oxide, RGO) film. Of course, other films having a certain optical transmittance may be used. For other films except the reduced graphene oxide film, in order to separate the reduced graphene oxide film from the substrate, a specific process must be designed and implemented according to the structural characteristics of the film itself. For example, the carbon nanotube film is formed by providing an adhesive on both protruding surfaces of the groove by a minute hollow groove structure, and adhering the carbon nanotube film attached to the growth substrate by the adhesive, thereby transferring the carbon nanotube film to the hollow groove apart from the growth substrate to become a suspended carbon nanotube film. And then the double-sided modified carbon nano tube film is carried out by the method.
Preferably, the first nanomaterial layer and the second nanomaterial layer may be the same nanomaterial or different nanomaterial.
Further, the first and second nanomaterial layers are both molybdenum disulfide MoS 2 。
Preferably, the deposition electrode is an Au (gold) interdigital electrode.
Further, the inter-digital electrodes have a pitch of 200 μm and a finger width of 200 μm.
Still further, both ends of the interdigital electrode are combined with copper wires through silver paste to perform electrical measurement.
Preferably, the insulating hollow groove structure is a plexiglass with hollow grooves.
The invention also provides a preparation method of the photoelectric detector of the nanomaterial-modified light-transmitting film, which comprises the following steps:
(1) The molybdenum disulfide MoS with the concentration of 0.2mg/mL is respectively dripped on the upper surface and the lower surface of the RGO film 2 75 mu L of nano-sheet dispersion liquid to prepare MoS 2 Nanosheet double-sided RGO with MoS 2 -RGO-MoS 2 A structured composite film;
(2) Vacuum thermal evaporation method is adopted, and MoS is adopted through a mask 2 -RGO-MoS 2 Depositing Au interdigital electrodes on the surface of the composite film;
(3) Fixing the film after depositing the electrode on the insulated hollow groove to make the film in a suspension state;
(4) And combining the two ends of the interdigital electrode with copper wires by using silver colloid to perform electric measurement, wherein incident light is incident from the surface of the interdigital electrode when the detection performance is measured.
Preferably, the incident light is light in a near infrared band. In the wave band, the response rate of the photoelectric detector is higher.
Two specific examples of the present invention are given below.
Example 1
Graphene Oxide (GO) powder is dispersed in ethanol, and GO suspension with the concentration of 2mg/mL is obtained through ultrasonic treatment. Then, the GO suspension is divided into a plurality of times and is dripped on a Polytetrafluoroethylene (PTFE) substrate, and the GO suspension is required to be dripped before each timeDrying in an oven at 60 ℃ for 1-2 minutes, then carrying out next dripping, wherein the total quantity of the dripping is 400 mu L, and drying in air for 24 hours after the dripping is finished, so that the GO film can be peeled off from the PTFE substrate, and the self-supporting GO film is obtained. And carrying out thermal reduction on the GO film, wherein the flow rate of the mixed gas is 50mL/min under the mixed atmosphere of 95% argon and 5% hydrogen, the temperature is 200 ℃, and the thermal treatment is carried out for 3 hours, so that the self-supporting reduced graphene oxide (Reduced Graphene Oxide, RGO) film is obtained after the thermal reduction, and the preparation method of the RGO film is patented by the invention, and the patent number ZL 201610073189.6. The upper surface and the lower surface of the RGO film are respectively dripped with molybdenum disulfide (MoS) with the concentration of 0.2mg/mL 2 ) 75 mu L of nano-sheet dispersion liquid to prepare MoS 2 Nanosheet double-sided RGO with MoS 2 -RGO-MoS 2 Composite films of the structure.
Vacuum thermal evaporation method is adopted, and MoS is adopted through a mask 2 -RGO-MoS 2 And finally, combining two ends of the interdigital electrode with copper wires by using silver colloid to perform electric measurement, and when the detection performance is measured, incident light is incident from the electrodeless surface, the device structure and the illumination condition thereof are shown in figure 1.
Under the same test conditions, the pure RGO film photodetector and MoS are compared 2 MoS of nano-sheet double-sided modified RGO film 2 -RGO-MoS 2 "Performance of composite thin film photodetector, wavelength of incident light was 405nm, test was performed in room temperature air, and the comparison result is shown in FIG. 2.
The responsivity, which represents the magnitude of the detector converting a unit optical power into an electrical signal, represents the ability of the detector to convert an incident optical signal into an electrical signal, is an important indicator of the detector's performance. FIG. 2 shows MoS at various optical powers 2 -RGO-MoS 2 The response rate of the detector is significantly higher than that of the RGO detector, e.g., moS under illumination with a power of 0.15mW 2 -RGO-MoS 2 Response of photodetector and RGO photodetectorThe response rates are 1006mA/W and 484mA/W, moS respectively 2 -RGO-MoS 2 The response rate of the photoelectric detector is about 2.1 times of that of the RGO photoelectric detector, the response rate reaches the A/W level, and the practical level is achieved.
Example 2
The performances of the pure RGO film photoelectric detector and the MoS2-RGO-MoS2 composite film photoelectric detector are further compared in the ultraviolet, visible and infrared wave bands. The ultraviolet band 375nm, the visible light band 532nm, 633nm, the infrared band 808nm, 1064nm, 1550nm and 6 different wavelengths of laser are selected as incident light, and under the same test condition, the performance pairs of the pure RGO film photoelectric detector and the MoS2-RGO-MoS2 composite film photoelectric detector are shown in the figures 3-8. As can be seen from FIGS. 3 to 8, moS is irradiated with light of various wavelengths in the ultraviolet, visible and infrared bands 2 -RGO-MoS 2 The photocurrent of the detector is obviously higher than that of the RGO photodetector, and the response rate is calculated according to the formula: responsivity = photocurrent/incident light power, it can be seen that MoS is in each band of ultraviolet, visible, infrared 2 -RGO-MoS 2 The response rate of the detector is higher than that of the RGO photodetector, and the results are shown in table 1, wherein the response rate of the detector to infrared wavelength 1064nm is improved most significantly and is 2.2 times that of the RGO photodetector.
TABLE 1
The present invention is not limited to the preferred embodiments, but can be modified in any way according to the technical principles of the present invention, and all such modifications, equivalent variations and modifications are included in the scope of the present invention.
Claims (7)
1. The photoelectric detector of the light-transmitting film is modified by nano materials, and is characterized in that: comprising the following steps: the device comprises a hollow groove structure (1), a light-transmitting film (2), a first nano material layer (3), a second nano material layer (4) and a deposition electrode (5);
the upper surface and the lower surface of the light-transmitting film are respectively provided with a first nano material layer and a second nano material layer, an electrode is deposited on the lower surface of the second nano material layer, and then the light-transmitting film is fixed on the hollow groove structure, so that the light-transmitting film is in a suspension state;
the incident light sequentially passes through the first nano material layer, the light-transmitting film, the second nano material layer and the deposition electrode;
the light-transmitting film is a Reduced Graphene Oxide (RGO) film or a carbon nano tube film;
the first nano material layer and the second nano material layer are both made of molybdenum disulfide MoS 2 。
2. The nanomaterial-modified light-transmitting film photodetector according to claim 1, characterized in that: the deposition electrode is an Au interdigital electrode.
3. The nanomaterial-modified light-transmitting film photodetector according to claim 2, characterized in that: the pitch of the interdigital electrodes is 200 mu m, and the finger width is 200 mu m.
4. A photodetector of a nanomaterial-modified light-transmitting film as claimed in claim 3, wherein: and two ends of the interdigital electrode are combined with copper wires through silver colloid so as to perform electric measurement.
5. The nanomaterial-modified light-transmitting film photodetector of claim 4, wherein: the hollow groove structure is an insulating hollow groove.
6. The method for manufacturing a photodetector with a light-transmitting film modified with a nanomaterial according to claim 5, wherein: which comprises the following steps:
(1) The molybdenum disulfide MoS with the concentration of 0.2mg/mL is respectively dripped on the upper surface and the lower surface of the RGO film 2 75 mu L of nano-sheet dispersion liquid to prepare MoS 2 Nanosheet double-sided RGO with MoS 2 -RGO-MoS 2 A structured composite film;
(2) Vacuum thermal evaporation method is adopted, and MoS is adopted through a mask 2 -RGO-MoS 2 Depositing Au interdigital electrodes on the surface of the composite film;
(3) Fixing the film after depositing the electrode on the insulated hollow groove to make the film in a suspension state;
(4) And combining the two ends of the interdigital electrode with copper wires by using silver colloid to perform electric measurement, wherein incident light is incident from the surface of the interdigital electrode when the detection performance is measured.
7. The method for manufacturing a photodetector with a light-transmitting film modified with a nanomaterial according to claim 6, characterized in that: the incident light is light in the ultraviolet to infrared band.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110190212.0A CN112928174B (en) | 2021-02-18 | 2021-02-18 | Photoelectric detector of nano material modified light-transmitting film and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110190212.0A CN112928174B (en) | 2021-02-18 | 2021-02-18 | Photoelectric detector of nano material modified light-transmitting film and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112928174A CN112928174A (en) | 2021-06-08 |
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