CN112893326A

CN112893326A - Method for cleaning lining of semiconductor etching machine

Info

Publication number: CN112893326A
Application number: CN202110082591.1A
Authority: CN
Inventors: 吴小杰; 刘贤
Original assignee: Wuhu Xintong Semiconductor Materials Co ltd
Current assignee: Wuhu Xintong Semiconductor Materials Co ltd
Priority date: 2021-01-21
Filing date: 2021-01-21
Publication date: 2021-06-04

Abstract

The invention discloses a method for cleaning a lining of a semiconductor etching machine, which adopts micro powder as a sand blasting material, and carries out sand blasting through certain gas pressure to clean the lining of the semiconductor etching machine and remove etching reaction products on the surface of the lining. By adopting the technical scheme, the micro powder with extremely small particles is selected as a sand blasting material, and the reasonable carrier gas airflow pressure is adjusted in the test, so that the micro powder particles can be effectively sprayed out at a constant speed, the etching products adsorbed on the surface of the lining can be uniformly and thoroughly removed, the obvious damage to the surface of the lining due to overlarge pressure can be avoided, the surface treatment of products with complex internal structures is realized, and the surface treatment efficiency and the surface quality are improved.

Description

Method for cleaning lining of semiconductor etching machine

Technical Field

The invention belongs to the technical field of surface treatment of semiconductor product process tools, and particularly relates to a method for cleaning a lining of a semiconductor etching machine.

Background

Etching is one of the key steps in the manufacturing process of semiconductor integrated circuits. At present, lining parts are used in reaction cavities of most etching machines, and a certain anodic film (generally a 50-70 μm hard anode) is generated on the surface of an aluminum alloy base material under the action of the lining parts so as to resist the corrosion of the etching process environment to the parts. As shown in fig. 1, in some machines with higher requirements, a special ceramic coating layer (generally 100-150 μm thick) is further sprayed on the surface of the anode layer to further improve the corrosion resistance.

Along with the operation of the etching process, certain etching reaction products can be adsorbed on the surface of the cavity lining component, the reaction products are deposited to reach certain thickness, the lining component must be cleaned and regenerated, and the influence that the reaction products are adsorbed badly and fall off due to continuous operation is avoided. The conventional chemical cleaning method uses acidic and alkaline agents to form the anodic oxidation layer and the ceramic coating layer (the main component is Y) of the lining component₂O₃) It is difficult to etch away in these agents. In order to avoid corrosion, the removal of the adsorbed product can only be carried out by physical stripping, and mechanical or manual grinding is currently used.

As shown in fig. 2 and 3, the liner 1 is provided with a wafer inlet 2, an exhaust port grid 3, a first mounting hole 4, a second mounting hole 5 and a bottom side wall 6. Because the gas vent design of inside lining part bottom is complicated, and the space size is little, and mostly is the grid, and the gap is narrow between the grid, causes to grind very wasting time and energy.

Disclosure of Invention

The invention provides a method for cleaning a lining of a semiconductor etching machine table, and aims to solve the problem of cleaning the inner surface with a complex structure.

In order to achieve the purpose, the invention adopts the technical scheme that:

the cleaning method of the lining of the semiconductor etching machine adopts micro powder as a sand blasting material, sand blasting is carried out through certain gas pressure, the lining of the semiconductor etching machine is cleaned, and the surface etching reaction product is removed.

The micro powder is made of Al₂O₃。

The specific technical parameters are as follows:

1. the mesh number of the micro powder is 220#, and the pressure of the sand blasting gas is 0.15-0.20 MPa.

2. The mesh number of the micro powder is 300#, and the pressure of the sand blasting gas is 0.20-0.25 MPa.

The incident angle formed by the spraying direction of the sand blasting and the surface of the workpiece is 45-90 degrees.

The distance between a nozzle of the sand blasting equipment adopted by the cleaning method and the surface of the workpiece is 15 cm.

By adopting the technical scheme, the micro powder with extremely small particles is selected as a sand blasting material, and the reasonable carrier gas airflow pressure is adjusted through tests, so that the micro powder particles can be effectively sprayed at a constant speed, etching products adsorbed on the surface of the lining can be uniformly and thoroughly removed, the obvious loss of the surface of the lining due to overlarge pressure can be avoided, the surface treatment of products with complex internal structures is realized, and the surface treatment efficiency and the surface quality are improved.

Drawings

The contents of the drawings and the reference numbers in the drawings are briefly described as follows:

FIG. 1 is a schematic view of a liner substrate and a surface multi-layer structure according to the present invention;

FIG. 2 is a schematic diagram of a lining structure of a semiconductor etching machine according to the present invention;

fig. 3 is a schematic top view of the exhaust port grill structure of fig. 2.

Labeled as:

1. liner, 2, wafer inlet, 3, exhaust grid, 4, mounting hole one, 5, mounting hole two, 6, bottom sidewall.

Detailed Description

The following detailed description of the embodiments of the present invention will be given in order to provide those skilled in the art with a more complete, accurate and thorough understanding of the inventive concept and technical solutions of the present invention.

The invention relates to a method for cleaning a lining of a semiconductor etching machine by using micro powder for sand blasting. Blast stripping is used to thoroughly remove small amounts of residue or a naturally adsorbed layer from the surface of a component during surface treatment and component cleaning. The sand blasting stripping is that under certain air pressure, the compressed air flow drives the gravel to impact the surface of the treated object, the impact force of the gravel sputters and strips the adhesion substances on the surface of the treated object, and certain physical damage can be formed on the surface of the treated object.

In order to solve the problems in the prior art and realize the invention aim of solving the problem of cleaning the inner surface with a complex structure, the invention adopts the following technical scheme:

The micro powder is made of Al₂O₃。Al₂O₃The material has good material stability, hardness and wear resistance, and is most suitable to be used as a surface cleaning material. Al (Al)₂O₃The sand material is filtered by a special sieve after being crushed by a manufacturer, and the fine state of the powder is ensured.

The invention selects the micro powder with extremely small particles as a sand blasting material, and tests and adjusts the pressure of carrier gas airflow, so that the micro powder particles can be effectively sprayed at a constant speed, etching products adsorbed on the surface of the lining can be uniformly and thoroughly removed, and obvious loss of the surface of the lining due to overlarge pressure can be avoided.

Through the trial of micro powder of various models under various sand blasting pressures, the following two micro powder sand blasting conditions are found to satisfy the lining cleaning of the semiconductor etching machine, and the specific technical parameters are as follows:

1. the mesh number of the micro powder is 220#, and the pressure of the sand blasting gas is 0.15-0.20 MPa; the type number of the micro powder is 220#, the pressure of the sand blasting gas is 0.15-0.20 MPa, the adhesion products on the surface of the lining can be effectively removed, and the damage to the hard anode is within 0.8 mu m;

2. the mesh number of the micro powder is 300#, and the pressure of the sand blasting gas is 0.20-0.25 MPa. The type number of the selected micro powder is 300#, the pressure of the sand blasting gas is 0.20-0.25 MPa, the adhesion products on the surface of the lining can be effectively removed, and the damage to the hard anode is within 0.5 mu m.

The nozzle has a bore diameter as small as possible to ensure a certain velocity of the gas jet.

The incident angle formed by the spraying direction of the sand blasting and the surface of the workpiece is 45-90 degrees. When the thickness of the reaction product of surface etching is larger and the adhesion is firmer, cleaning in a way close to direct injection; at the beginning, the spraying is carried out in a relatively inclined mode, when the surface is difficult to clean, the incident angle is increased, and finally, a spraying state close to direct spraying is formed.

The distance between a nozzle of the sand blasting equipment adopted by the cleaning method and the surface of the workpiece is 15 cm. Keeping a certain distance between the nozzle and the surface of the workpiece, so that the sprayed high-pressure gas and micro powder are expanded to a certain area, and if the area is too small, the surface of the workpiece is damaged; if the area is too large, the cleaning effect is difficult to play.

The sand blasting time is controlled by an operator, generally, the sand blasting is carried out uniformly, the film removing effect is checked, and the sand blasting is repeatedly carried out on the part which is not completely removed until the requirement of the surface quality is met.

The invention has been described above with reference to the accompanying drawings, it is obvious that the invention is not limited to the specific implementation in the above-described manner, and it is within the scope of the invention to apply the inventive concept and solution to other applications without substantial modification.

Claims

1. A method for cleaning a lining of a semiconductor etching machine is characterized by comprising the following steps: the cleaning method adopts micro powder as a sand blasting material, sand blasting is carried out through certain gas pressure, the lining of the semiconductor etching machine is cleaned, and the surface etching reaction product is removed.

2. The method for cleaning the inner liner of the semiconductor etching machine according to claim 1, wherein: the micro powder is made of Al₂O₃。

3. The method of claim 2, wherein the step of cleaning the liner comprises the steps of: the mesh number of the micro powder is 220#, and the pressure of the sand blasting gas is 0.15-0.20 MPa.

4. The method of claim 2, wherein the step of cleaning the liner comprises the steps of: the mesh number of the micro powder is 300#, and the pressure of the sand blasting gas is 0.20-0.25 MPa.

5. The method for cleaning the inner liner of the semiconductor etching machine according to any one of claims 1 to 4, wherein: the incident angle formed by the spraying direction of the sand blasting and the surface of the workpiece is 45-90 degrees.

6. The method for cleaning the inner liner of the semiconductor etching machine according to any one of claims 1 to 4, wherein: the distance between a nozzle of the sand blasting equipment adopted by the cleaning method and the surface of the workpiece is 15 cm.