CN112897451A - Sensor packaging structure, manufacturing method thereof and electronic equipment - Google Patents
Sensor packaging structure, manufacturing method thereof and electronic equipment Download PDFInfo
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- CN112897451A CN112897451A CN202110073187.8A CN202110073187A CN112897451A CN 112897451 A CN112897451 A CN 112897451A CN 202110073187 A CN202110073187 A CN 202110073187A CN 112897451 A CN112897451 A CN 112897451A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0058—Packages or encapsulation for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0064—Packages or encapsulation for protecting against electromagnetic or electrostatic interferences
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R2201/00—Details of transducers, loudspeakers or microphones covered by H04R1/00 but not provided for in any of its subgroups
- H04R2201/003—Mems transducers or their use
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Toxicology (AREA)
- General Health & Medical Sciences (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Pressure Sensors (AREA)
Abstract
The invention discloses a sensor packaging structure, a manufacturing method thereof and electronic equipment, wherein the sensor packaging structure comprises a cover cap, a substrate, a sensor chip, an ASIC chip and a plastic packaging layer, wherein the substrate and the cover cap enclose to form an accommodating cavity; the sensor chip is arranged in the accommodating cavity; the ASIC chip is arranged in the accommodating cavity and is electrically connected with the substrate and the sensor chip; the plastic packaging layer covers the surface of the part of the ASIC chip, which faces away from the substrate. The sensor packaging structure of the technical scheme of the invention can improve the pollution of the protective layer in a dispensing mode to other chips and metal wires and improve the yield of products.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a sensor packaging structure, a manufacturing method thereof and electronic equipment.
Background
As the size of semiconductor devices is smaller, the packaging space inside the product is compressed, and the chip pitch inside the packaging structure is smaller. Meanwhile, as the shielding requirements for external corrosion and the like are higher and higher, a protective layer is required to be coated on the surface of the integrated circuit chip. At present, the chip is usually coated by adopting a dispensing method, but the dispensing method has the problems of easy pollution to chips beside and damage to metal connecting wires due to small chip spacing.
Disclosure of Invention
The invention mainly aims to provide a sensor packaging structure, and aims to solve the problem that the sensor packaging structure is easy to pollute when protected in a dispensing mode.
In order to achieve the above object, the sensor package structure provided by the present invention comprises:
a cover;
the substrate and the cover cap enclose to form an accommodating cavity;
the sensor chip is arranged in the accommodating cavity;
the ASIC chip is arranged in the accommodating cavity and is electrically connected with the substrate and the sensor chip; and
and the plastic packaging layer covers the surface of the part of the ASIC chip, which faces away from the substrate.
In an optional embodiment, the molding compound covers a part of the surface of the ASIC chip facing away from the substrate and a part of the peripheral side of the ASIC chip, and the molding compound is located on a side of the ASIC chip facing away from the sensor chip.
In an optional embodiment, a mounting groove is formed in a surface of the substrate facing the cover, the ASIC chip is disposed in the mounting groove, and a portion of the molding layer covering the ASIC chip faces away from the surface of the substrate and fills a gap between a portion of a peripheral side surface of the ASIC chip and a side wall of the mounting groove corresponding to the ASIC chip.
In an optional embodiment, the plastic package layer further covers part of the opening outer edge of the mounting groove.
In an optional embodiment, a projection area of the molding compound layer on a surface of the ASIC chip facing away from the substrate is S1, an area of the surface of the ASIC chip facing away from the substrate is S2, wherein a ratio range of S1/S2 is 2/3 or more and 3/4 or less; and/or the presence of a gas in the gas,
the thickness range of the plastic package layer on the surface of the ASIC chip, which is far away from the substrate, is 75-100 microns.
In an optional embodiment, the sensor chip is an MEMS chip, the substrate is provided with a sound hole communicated with the accommodating cavity, the sensor chip covers the sound hole, a first pin is disposed at a position of the ASIC chip not covered by the plastic package layer, and the MEMS chip is electrically connected to the first pin through a first metal wire.
In an optional embodiment, a pad is disposed on the surface of the substrate, the ASIC chip is electrically connected to the pad through a second metal wire, and the second metal wire is covered by the molding compound layer.
The invention also provides a manufacturing method of the sensor packaging structure, which comprises the following steps:
providing a substrate, a cover cap, a sensor chip and an ASIC chip;
mounting the sensor chip and the ASIC chip on the surface of the substrate at intervals;
electrically connecting the ASIC chip with the substrate, and covering one side of the ASIC chip close to the sensor chip by using a baffle plate;
the ASIC chip is subjected to plastic packaging by using a plastic packaging process to form a plastic packaging layer which partially covers the surface of the ASIC chip, which is far away from the substrate;
removing the baffle plate and electrically connecting the sensor chip to the uncovered part of the ASIC chip;
and encapsulating a cover on the surface of the substrate to form an accommodating cavity in a surrounding manner, wherein the sensor chip, the ASIC chip and the plastic packaging layer are all positioned in the accommodating cavity.
In an optional embodiment, a bonding pad is disposed on a surface of the substrate, a bonding pad is disposed on a surface of the sensor chip, and a first pin and a second pin are disposed on a surface of the ASIC chip;
the step of attaching the sensor chip and the ASIC chip to the surface of the substrate at intervals includes:
attaching the surface of the sensor chip without the welding point to the surface of the substrate with the welding pad;
mounting the surface of the ASIC chip without the first pin and the second pin on the surface of the substrate with the bonding pad;
the step of electrically connecting the ASIC chip to the substrate and covering a side of the ASIC chip close to the sensor chip with a barrier includes:
connecting a second pin of the ASIC chip with the bonding pad through a second metal wire;
covering the second pin and the peripheral position of the ASIC chip by using a baffle plate;
the step of removing the shutter and electrically connecting the sensor chip to the uncovered portion of the ASIC chip comprises:
and connecting the first pin of the ASIC chip with the welding point through a first metal wire.
The invention further provides an electronic device, which comprises a shell and a sensor packaging structure arranged in the shell, wherein the sensor packaging structure is the sensor packaging structure.
The sensor packaging structure comprises the substrate, the cover cap, the sensor chip and the ASIC chip, wherein the accommodating cavity formed by enclosing the substrate and the cover cap can provide a shielding space for the ASIC chip and the MEMS chip, so that external elements and signals are effectively prevented from influencing electric signals of the ASIC chip and the MEMS chip. Meanwhile, the plastic package layer covers the partial surface of the ASIC chip, which is far away from the substrate, so that the protection effect of corrosion prevention is achieved, the existing glue dispensing mode for coating the ASIC chip is replaced, the problem that the chip beside is easily polluted due to the fact that the chip distance is small in the glue dispensing process can be effectively solved, and the reliability and the yield of the packaging structure are improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.
FIG. 1 is a longitudinal cross-sectional view of one embodiment of a sensor package structure of the present invention;
FIG. 2 is a cross-sectional view of the sensor package structure of FIG. 1;
FIG. 3 is a flow chart of a method of fabricating a sensor package structure according to the present invention;
fig. 4 to 7 are cross-sectional views of the sensor package structure of fig. 3 in the manufacturing process.
The reference numbers illustrate:
reference numerals | Name (R) | Reference numerals | Name (R) | |
100 | |
71 | |
|
| Containing cavity | 711 | Through |
|
10 | |
73 | Vibrating |
|
11 | |
731 | |
|
13 | |
81 | First metal wire | |
15 | |
83 | |
|
30 | |
90 | |
|
50 | |
91 | |
|
70 | |
93 | Second pin |
The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.
In the present invention, unless otherwise expressly stated or limited, the terms "connected," "secured," and the like are to be construed broadly, and for example, "secured" may be a fixed connection, a removable connection, or an integral part; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In addition, the descriptions related to "first", "second", etc. in the present invention are only for descriptive purposes and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
The invention provides a sensor package structure 100.
Referring to fig. 1 and fig. 2, in an embodiment of the present invention, a sensor package structure 100 includes a cover 30, a substrate 10, a sensor chip 70, an ASIC chip 90, and a molding layer 50, wherein the substrate 10 and the cover 30 enclose to form an accommodating cavity 100 a;
the sensor chip 70 is arranged in the accommodating cavity 100 a; the ASIC chip 90 is disposed in the accommodating cavity 100a and electrically connected to both the substrate 10 and the sensor chip 70;
the molding layer 50 covers the surface of the ASIC chip 90 facing away from the substrate 10.
In this embodiment, the sensor package structure 100 includes a cover 30 and a substrate 10, wherein the substrate 10 is a printed circuit board, i.e., a PCB, the substrate may be a silicon substrate or an epoxy substrate, a circuit for electrical connection is formed on one surface of the substrate, a signal lead-out pad 13 connected to the circuit is provided, and a solder mask, i.e., a green surface layer displayed on the printed circuit board, is further provided on the surface of the circuit, and can prevent solder from overflowing and short-circuiting the circuit; and the performance of the circuit board can be effectively protected by moisture. And an exposure opening is formed on the solder mask layer corresponding to the pad 13 to expose the pad 13 for external connection of an electronic element.
The longitudinal section of the cover 30 is U-shaped, the cover 30 may be a metal shell formed integrally or a non-metal shell coated with a metal material, and one end of the cover 30 in the opening direction and the substrate 10 enclose a closed accommodating cavity 100 a. It is understood that the cover 30 and the substrate 10 can be connected by conductive adhesive or solder paste, and the electrical connection between the two can be realized, so as to form a conductive shielding cavity, and the bonding pad 13, the ASIC chip 90 and the sensor chip 70 are all located in the receiving cavity 100a, so as to facilitate the electrical connection. The two electrical connections may be made by wire bonding or by providing metal traces on the substrate 10. Meanwhile, the closed accommodating cavity 100a can prevent external electromagnetic wave interference, enhance the protection effect on the two chips, and ensure the conversion performance of the sensor chip 70. Of course, the cover 30 can communicate with the substrate 10 through other conductive materials.
The cross-sectional shape of the structure enclosed by the cover 30 and the substrate 10 may be a square, a circle, a polygon, or the like, and is not limited herein. Meanwhile, in order to fix the substrate 10 and the applied product or system and transmit the electrical signal, the surface of the substrate 10 away from the accommodating cavity 100a may be provided with solder tails, which may be soldered to a motherboard circuit of a specific product through processes such as SMT, and the like, and the number of the specific solder tails may be 3 or 4, so as to improve the stability of structural connection and data transmission.
Here, the sensor chip 70 disposed in the accommodating cavity 100a may be an environmental sensor chip 70, such as an air pressure sensor chip 70, a humidity sensor chip 70, a temperature sensor chip 70, and the like, or an acoustic sensor chip 70, such as a microphone sensor chip 70, without limitation, and is within the protection scope of the present invention. The plastic sealing layer 50 covers a portion of the surface of the ASIC chip 90 opposite to the substrate 10, so that the ASIC chip 90 can be effectively shielded and protected without dispensing. The plastic package layer 50 is specifically formed by a plastic package step in an existing plastic package process, and the material of the plastic package layer may be epoxy resin, and the part of the surface of the ASIC chip 90, which faces away from the substrate 10, may be covered by a cover plate, and the part of the surface is reserved for facilitating electrical connection with the sensor chip 70.
The sensor packaging structure 100 of the technical scheme of the invention comprises a substrate 10, a cover 30, a sensor chip 70 and an ASIC chip 90, wherein a containing cavity 100a formed by enclosing the substrate 10 and the cover 30 can provide a shielding space for the ASIC chip 90 and the MEMS chip, so that external elements and signals are effectively prevented from influencing electric signals of the ASIC chip and the MEMS chip. Meanwhile, the plastic package layer 50 is used for covering the partial surface of the ASIC chip 90, which is far away from the substrate 10, so that the protection effect of corrosion prevention is achieved, the existing glue dispensing mode for coating the ASIC chip 90 is replaced, the problem that the chip beside the chip is easily polluted due to the small chip distance in the glue dispensing process can be effectively solved, and the reliability and the yield of the packaging structure are improved.
In an alternative embodiment, the molding compound layer 50 covers a portion of the surface of the ASIC chip 90 facing away from the substrate 10 and a portion of the peripheral side of the ASIC chip 90, and the molding compound layer 50 is located on a side of the ASIC chip 90 away from the sensor chip 70.
Here, the plastic package layer 50 covers the partial surface of the integrated ASIC chip 90 away from the substrate 10 and also covers the peripheral side surface of the partial ASIC chip 90, so that the shielding effect is better, the peripheral edge of the plastic package layer 50 is connected to the surface of the substrate 10, and the plastic package layer can also play a role in fixing the ASIC chip 90, so that the structure is more stable. Certainly, the molding compound layer 50 is located on a side of the ASIC chip 90 away from the sensor chip 70, for example, the ASIC chip 90 has a square structure, and the molding compound layer 50 covers three peripheral sides and does not cover a peripheral side facing the sensor chip 70, so that the electrical connection between the sensor chip 70 and the ASIC chip 90 is not affected, and the molding process is also facilitated.
Referring to fig. 1, in an alternative embodiment, a mounting groove 15 is formed on a surface of the substrate 10 facing the cover 30, the ASIC chip 90 is disposed in the mounting groove 15, and a portion of the plastic package layer 50 covering the ASIC chip 90, which portion faces away from the surface of the substrate 10, fills a gap between a partial peripheral side surface of the ASIC chip 90 and a corresponding side wall of the mounting groove 15.
In this embodiment, in order to facilitate the plastic molding process, a mounting groove 15 is formed on the surface of the substrate 10 facing the cover 30, where the opening of the mounting groove 15 is larger than the ASIC chip 90, so as to facilitate the mounting of the ASIC chip on the bottom wall of the mounting groove 15. At this moment, cover the opening border of one side of mounting groove 15 near sensor chip 70 to cover the surface that partly ASIC chip 90 deviates from base plate 10 simultaneously, then the material of will moulding plastics is moulded plastics to the within range that closes that encloses, makes the plastic envelope layer 50 be full of the space between the lateral wall of the partial week side of ASIC chip 90 and mounting groove 15, thereby can increase the installation stability to ASIC chip 90, and can save the baffle of sheltering from plastic envelope material overflow, makes the plastic envelope convenient and fast more.
In an alternative embodiment, the plastic sealing layer 50 also covers a part of the opening outer edge of the mounting groove 15.
In this embodiment, in order to further improve the structural stability, the plastic package layer 50 further covers a part of the opening outer edge of the mounting groove 15, where the edge is far away from the sensor chip 70 and corresponds to the peripheral side surface of the ASIC chip 90, so as to increase the connection area between the plastic package layer 50 and the substrate 10, thereby making the overall structure stable and better.
In an alternative embodiment, the projection area of the molding compound layer 50 on the surface of the ASIC chip 90 away from the substrate 10 is S1, the surface area of the ASIC chip 90 away from the substrate 10 is S2, wherein the ratio of S1/S2 is in a range of 2/3 to 3/4; and/or the presence of a gas in the gas,
the thickness of the molding compound layer 50 on the surface of the ASIC chip 90 away from the substrate 10 ranges from 75 μm to 100 μm.
In this embodiment, in order to protect the ASIC chip 90 as much as possible, the area of the surface of the plastic package layer 50 covered by the plastic package layer is not small, and the plastic package process is conveniently performed without affecting the electrical connection with the sensor chip 70, and the area of the surface of the ASIC chip 90 away from the substrate 10 covered by the plastic package layer 50 is not large, where the projection area of the plastic package layer 50 on the ASIC chip 90 away from the substrate 10 is S1, the surface area of the ASIC chip 90 away from the substrate 10 is S2, and the ratio range of S1/S2 is 2/3 or more and 3/4 or less, so that the protection of the ASIC chip 90 can be improved to the maximum extent while the processing efficiency is ensured.
In an embodiment, the thickness of the molding compound layer 50 on the surface of the ASIC chip 90 away from the substrate 10 is not too small, otherwise voids are easily formed, and of course, the thickness of the molding compound layer 50 on the surface of the ASIC chip 90 away from the substrate 10 is not too large, which results in unnecessary waste. Here, the plastic sealing layer 50 is provided to have a thickness ranging from 75 μm to 100 μm, for example, 80 μm, 85 μm, 90 μm, or the like, so that the ASIC chip 90 can be protected and the cost can be saved.
Referring to fig. 1 and fig. 2, in an alternative embodiment, the sensor chip 70 is an MEMS chip, the substrate 10 is provided with a sound hole 11 communicating with the accommodating cavity 100a, the sensor chip 70 is disposed to cover the sound hole 11, a first pin 91 is disposed at a position where the ASIC chip 90 is not covered by the molding compound layer 50, and the MEMS chip is electrically connected to the first pin 91 through a first metal wire 81.
In this embodiment, the sensor chip 70 is an MEMS chip, that is, a microphone chip, and in order to realize the acoustic-electric conversion, a sound hole 11 is formed in the substrate 10 corresponding to the MEMS chip, so as to facilitate the inflow of the sound signal, and the MEMS chip is configured to sense and detect the sound signal flowing from the sound hole 11, convert the sound signal into an electrical signal, transmit the electrical signal, and transmit the electrical signal to the ASIC chip 90. The ASIC chip 90 is used to provide voltage to the MEMS chip, and process and amplify the signal output by the MEMS chip, so that the sensor package structure 100 provides a sound receiving function for the electronic device. Of course, in other embodiments, the cover 30 may be provided with the corresponding sound hole 11.
Specifically, the MEMS chip includes a substrate 71 and a diaphragm assembly 73, the substrate 71 is generally made of a material such as single crystal silicon, polysilicon, or silicon nitride, and the substrate 71 is substantially square in external shape and can be connected to the substrate 10 through a glue. The substrate 71 is disposed around the periphery of the acoustic hole 11, and is provided with a through hole 711, the through hole 711 is communicated with the acoustic hole 11, and the through hole 711 is matched with the acoustic hole to form an acoustic cavity of the sensor package structure 100, so that smoothness of sound transmission can be ensured. The cross section of the through hole 711 is circular, square or polygonal, and the opening of the sound hole 11 may also be circular, so that the peripheral wall of the sound cavity is a smooth arc surface. The diaphragm assembly 73 may be of a piezoelectric type or a capacitive type, and is not limited herein. For example, when the diaphragm assembly 73 is of a piezoelectric structure, it includes a diaphragm and piezoelectric materials disposed on two sides of the diaphragm, and the diaphragm is excited by a sound signal to vibrate the diaphragm, so that the pressure of the piezoelectric materials changes, and a corresponding electrical signal is output.
Here, the MEMS chip is electrically connected to the ASIC chip 90 through the diaphragm component 73, and the diaphragm component 73 is electrically connected to the first pin 91 of the ASIC chip 90 through the first metal wire 81, where the first metal wire 81 may be a gold wire or a copper wire, so as to effectively improve the electrical connection performance. The first pins 91 are arranged on one side, close to the MEMS chip, of the ASIC chip 90, and are not covered by the molding layer 50, the number of the first pins is two, correspondingly, two welding points 731 are arranged on the MEMS chip, and the two welding points 731 are electrically connected with the two first pins 91 through two first metal wires 81, respectively, so that even if one of the two first pins fails, the electrical connection can be ensured, thereby ensuring the use performance of the sensor.
Referring to fig. 2, in an alternative embodiment, a pad 13 is disposed on a surface of the substrate 10, the ASIC chip 90 is electrically connected to the pad 13 through a second metal wire 83, and the plastic package layer 50 covers the second metal wire 83.
Here, the ASIC chip 90 and the substrate 10 are electrically connected through the second metal line 83, and the second metal line 83 is made of the same material as the first metal line 81, and may be made of copper or gold, which has a good conduction effect. And, the pad 13 of the substrate 10 is provided with a plurality of, correspondingly, the ASIC chip 90 is provided with a plurality of second pins 93, the plurality of pads 13 and the plurality of second pins 93 are arranged in a one-to-one correspondence, and are electrically connected through a plurality of second metal wires 83, thereby realizing the stability of connection between the ASIC chip 90 and the substrate 10. Of course, in other embodiments, the ASIC chip 90 is fixed to the substrate 10 by solder ball implantation.
Referring to fig. 3 to fig. 7, the present invention further provides a method for manufacturing a sensor package structure 100, where the method for manufacturing the sensor package structure 100 includes the following steps:
step S10: providing a substrate 10, a cover 30, a sensor chip 70 and an ASIC chip 90;
step S20: mounting the sensor chip 70 and the ASIC chip 90 on the surface of the substrate 10 at intervals;
step S30: electrically connecting the ASIC chip 90 to the substrate 10, and covering a side of the ASIC chip 90 close to the sensor chip 70 with a barrier;
step S40: plastically packaging the ASIC chip 90 by using a plastic packaging process to form a plastic packaging layer 50 which partially covers the surface of the ASIC chip 90, which is far away from the substrate 10;
step S50: removing the shutter and electrically connecting the sensor chip 70 to the uncovered portion of the ASIC chip 90;
step S60: and encapsulating a cover cap 30 on the surface of the substrate 10 to enclose a containing cavity 100a, wherein the sensor chip 70, the ASIC chip 90 and the plastic package layer 50 are all located in the containing cavity 100 a.
Specifically, the ASIC chip 90 is first attached to the surface of the substrate 10 by gluing, thereby forming a stable fixing structure. Then, the ASIC chip 90 and the substrate 10 are electrically connected to each other. And then, covering the surface of the ASIC chip 90 close to one side of the sensor by using a shielding plate, and carrying out plastic package on the ASIC chip 90 to form a plastic package layer 50 which partially covers the surface of the ASIC chip 90 away from the substrate 10. Next, the shielding plate is removed, the sensor chip 70 is attached to the surface of the substrate 10, and the sensor chip 70 and the ASIC chip 90 are electrically connected, where the sensor chip 70 and the ASIC chip 90 can be electrically connected through the uncovered portion. Finally, the cover 30 is packaged on the surface of the substrate 10 by gluing, so as to form a package structure with a receiving cavity 100a, and the sensor chip 70, the ASIC chip 90 and the molding compound layer 50 are all located in the receiving cavity 100 a.
It can be understood that, the plastic package layer 50 is used to partially cover the ASIC chip 90 for protection, instead of using the dispensing operation to coat the ASIC chip 90, which effectively avoids the problem of chip contamination caused by the small chip pitch during the dispensing process, thereby improving the reliability and yield of the sensor package structure 100.
It should be noted that, a groove may also be formed in the substrate 10, and the ASIC chip 90 is disposed in the groove, the plastic package layer 50 not only covers the surface of the ASIC chip 90 away from the substrate 10, but also covers a part of the peripheral side surface of the ASIC chip 90, that is, the plastic package layer 50 is filled between the inner wall of the groove and the part of the peripheral side surface of the ASIC chip 90, so as to achieve a better shielding effect. Of course, the cover of the molding layer 50 on the surface of the ASIC chip 90 facing away from the substrate 10 may extend to the edge of the opening of the slot for a distance, so that the molding structure is more stable.
In an alternative embodiment, the surface of the substrate 10 is provided with a bonding pad 13, the surface of the sensor chip 70 is provided with a bonding pad 731, and a surface of the ASIC chip 90 is provided with a first pin 91 and a second pin 93 at an interval;
the step S20 of attaching the sensor chip 70 and the ASIC chip 90 to the surface of the substrate 10 with a space therebetween includes:
s21: attaching the surface of the sensor chip 70 not provided with the bonding pad 731 to the surface of the substrate 10 provided with the bonding pad 13;
s22: attaching the surface of the ASIC chip 90 without the first and second leads 91 and 93 to the surface of the substrate 10 with the bonding pad 13;
the step S30 of electrically connecting the ASIC chip 90 to the substrate 10 and covering the side of the ASIC chip 90 close to the sensor chip 70 with a barrier includes:
s31: connecting a first lead 91 of the ASIC chip 90 to the pad 13 through a second metal wire 83;
s32: covering the second pins 93 and the peripheral positions of the ASIC chip 90 with a baffle plate;
the step S50 of removing the shutter and electrically connecting the sensor chip 70 to the uncovered portion of the ASIC chip 90 includes:
s51: the second lead 93 of the ASIC chip 90 is connected to the bonding pad 731 through a first metal line 81.
Specifically, the solder resist layer on the substrate 10 is provided with an exposure hole, so that the bonding pad 13 for connection is exposed, meanwhile, the surface of the sensor chip 70 not provided with the soldering point 731 is attached to the surface of the substrate 10 provided with the bonding pad 13, and the surface of the ASIC chip 90 not provided with the first pin 91 is attached to the surface of the substrate 10 provided with the bonding pad 13, so that the ASIC chip 90 is electrically connected conveniently. Then, after the first lead 91 of the ASIC chip 90 is connected to the pad 13 through the second metal wire 83, the second lead 93 is covered with a barrier, and the peripheral position of the second lead 93 is covered, so as to prevent the plastic package layer 50 from covering. In the plastic molding process, the plastic molding layer 50 may extend a certain distance toward the edge of the notch of the mounting groove 15, so as to coat the second metal wire 83 and the pad 13 together, and further ensure the connection stability of the ASIC chip 90. After the shutter is removed, the second leads 93 are exposed, so that the ASIC chip 90 and the sensor chip 70 can be electrically connected through the first metal wires 81 and the bonding pads 731. Here, the sensor chip 70 is mounted and electrically connected after the plastic package, so that the plastic package layer 50 does not damage the first metal wire 81, and the sensor chip 70 is not affected, thereby improving the yield of the sensor package structure 100.
It should be noted that, here, the number of the second leads 93, the pads 13 and the second metal lines 83 may be multiple, and the second leads 93 and the pads 13 correspond to each other one by one and are electrically connected through one second metal line 83. Similarly, the number of the second pins 93, the number of the soldering points 731, and the number of the first metal lines 81 can also be multiple, and the first pins 91 and the soldering points 731 correspond to each other one by one, and are electrically connected through one first metal line 81, so that the electrical connection is ensured.
The present invention further provides an electronic device (not shown in the drawings), which includes a housing and a sensor package structure 100 disposed in the housing, and the specific structure of the sensor package structure 100 refers to the above embodiments, and since the sensor package structure 100 of the electronic device adopts all technical solutions of all the above embodiments, at least all the beneficial effects brought by the technical solutions of the above embodiments are achieved, and details are not repeated herein.
The electronic device may be a wearable electronic device, such as a smart watch or a bracelet, or may be a mobile terminal, such as a mobile phone or a notebook computer, or other devices that need to have an audio-electrical conversion function, which is not limited herein.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and all modifications and equivalents of the present invention, which are made by the contents of the present specification and the accompanying drawings, or directly/indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
1. A sensor package structure, comprising:
a cover;
the substrate and the cover cap enclose to form an accommodating cavity;
the sensor chip is arranged in the accommodating cavity;
the ASIC chip is arranged in the accommodating cavity and is electrically connected with the substrate and the sensor chip; and
and the plastic packaging layer covers the surface of the part of the ASIC chip, which faces away from the substrate.
2. The sensor package structure of claim 1, wherein the molding layer covers a portion of a surface of the ASIC chip facing away from the substrate and a portion of a peripheral side of the ASIC chip, and the molding layer is located on a side of the ASIC chip facing away from the sensor chip.
3. The sensor package structure of claim 2, wherein a mounting groove is formed in a surface of the substrate facing the cover, the ASIC chip is disposed in the mounting groove, and the molding layer covers a portion of the ASIC chip facing away from the surface of the substrate and fills a gap between a portion of a peripheral side surface of the ASIC chip and a corresponding sidewall of the mounting groove.
4. The sensor package structure of claim 3, wherein the molding compound further encapsulates a portion of the open outer edge of the mounting slot.
5. The sensor package structure of claim 3, wherein a projected area of the molding layer on a surface of the ASIC chip facing away from the substrate is S1, a surface area of the ASIC chip facing away from the substrate is S2, wherein a ratio of S1/S2 ranges from 2/3 to 3/4; and/or the presence of a gas in the gas,
the thickness range of the plastic package layer on the surface of the ASIC chip, which is far away from the substrate, is 75-100 microns.
6. The sensor package structure of any one of claims 1 to 5, wherein the sensor chip is a MEMS chip, the substrate is provided with a sound hole communicating with the accommodating cavity, the sensor chip is disposed to cover the sound hole, a first pin is disposed at a position of the ASIC chip not covered by the molding layer, and the MEMS chip is electrically connected to the first pin through a first metal wire.
7. The sensor package structure of claim 6, wherein a surface of the substrate is provided with a pad, the ASIC chip is electrically connected to the pad through a second metal line, and the molding compound covers the second metal line.
8. A manufacturing method of a sensor packaging structure is characterized by comprising the following steps:
providing a substrate, a cover cap, a sensor chip and an ASIC chip;
mounting the sensor chip and the ASIC chip on the surface of the substrate at intervals;
electrically connecting the ASIC chip with the substrate, and covering one side of the ASIC chip close to the sensor chip by using a baffle plate;
the ASIC chip is subjected to plastic packaging by using a plastic packaging process to form a plastic packaging layer which partially covers the surface of the ASIC chip, which is far away from the substrate;
removing the baffle plate and electrically connecting the sensor chip to the uncovered part of the ASIC chip;
and encapsulating a cover on the surface of the substrate to form an accommodating cavity in a surrounding manner, wherein the sensor chip, the ASIC chip and the plastic packaging layer are all positioned in the accommodating cavity.
9. The method for manufacturing the sensor package structure according to claim 8, wherein a surface of the substrate is provided with a bonding pad, a surface of the sensor chip is provided with a bonding pad, and a surface of the ASIC chip is provided with a first pin and a second pin;
the step of attaching the sensor chip and the ASIC chip to the surface of the substrate at intervals includes:
attaching the surface of the sensor chip without the welding point to the surface of the substrate with the welding pad;
mounting the surface of the ASIC chip without the first pin and the second pin on the surface of the substrate with the bonding pad;
the step of electrically connecting the ASIC chip to the substrate and covering a side of the ASIC chip close to the sensor chip with a barrier includes:
connecting a second pin of the ASIC chip with the bonding pad through a second metal wire;
covering the second pin and the peripheral position of the ASIC chip by using a baffle plate;
the step of removing the shutter and electrically connecting the sensor chip to the uncovered portion of the ASIC chip comprises:
and connecting the first pin of the ASIC chip with the welding point through a first metal wire.
10. An electronic device, comprising a housing and a sensor package structure disposed in the housing, wherein the sensor package structure is the sensor package structure according to any one of claims 1 to 7.
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