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CN112786511B - Transfer substrate and transfer method of micro-component - Google Patents

Transfer substrate and transfer method of micro-component Download PDF

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Publication number
CN112786511B
CN112786511B CN201911067135.9A CN201911067135A CN112786511B CN 112786511 B CN112786511 B CN 112786511B CN 201911067135 A CN201911067135 A CN 201911067135A CN 112786511 B CN112786511 B CN 112786511B
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micro
transfer
substrate
transfer substrate
plate body
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CN112786511A (en
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董小彪
姚志博
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Chengdu Vistar Optoelectronics Co Ltd
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Chengdu Vistar Optoelectronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Led Device Packages (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

The application discloses a transfer substrate of a microelement and a transfer method, wherein the transfer substrate comprises a plate body and a bonding layer arranged on the surface of one side of the plate body, and the bonding layer comprises a plurality of meltable conductive blocks arranged at intervals along the surface of one side of the plate body; wherein, be provided with the circuit in the plate body, the circuit connection can melt the conducting block, can melt the conducting block and be used for the fixed microelement of temporary. Through the mode, the detection of the micro-element can be realized in the transfer process of the micro-element.

Description

Transfer substrate and transfer method of micro-component
Technical Field
The present application relates to the field of semiconductor technology, and more particularly, to a transfer substrate and a transfer method for a micro device.
Background
The Micro-LED display technology has the advantages of high brightness, high response speed, low power consumption, long service life and the like, and becomes a research hotspot for pursuing a new generation of display technology. In the process of manufacturing the Micro-LED display, incoming material detection of the LED chip and a separation process of the LED chip and the substrate are required, namely the substrate of the LED epitaxial wafer is removed. The most common method for removing the LED substrate at present is laser lift-off, i.e. the material of the LED in contact with the substrate is decomposed by laser, so as to achieve the separation. However, due to the instantaneous impact and high energy generated by the laser during laser lift-off, the LED chip may be degraded, cracked or even not normally lighted. If the LED chip is detected and repaired after being mounted on a screen body, the method has high difficulty, so that the method has great significance for screening the LED chip after each process, particularly after laser stripping. In addition, because the Micro-LED display screen body is provided with tens of thousands of LED chips, great difficulty is caused to LED epitaxial wafers and batch detection in the process.
Disclosure of Invention
The present application mainly solves the technical problem of providing a transfer substrate and a transfer method for micro components, which can realize the detection of the micro components in the transfer process of the micro components.
In order to solve the technical problem, the application adopts a technical scheme that: providing a transfer substrate of a micro-component, wherein the transfer substrate comprises a plate body and an adhesive layer arranged on the surface of one side of the plate body, and the adhesive layer comprises a plurality of meltable conductive blocks arranged at intervals along the surface of one side of the plate body; wherein, be provided with the circuit in the plate body, the circuit connection can melt the conducting block, can melt the conducting block and be used for the fixed microelement of temporary.
Wherein, insulating spacers are filled among the fusible conductive blocks.
Wherein, the material of the fusible conductive block is low-melting-point solder.
Wherein, the low melting point solder is one or the combination of two of indium tin alloy and indium bismuth alloy.
The material of the insulating spacer is an organic material capable of absorbing light having a wavelength of 365nm or less.
Wherein, the organic material is one or more of photosensitive epoxy resin, polyimide, styrene and polyurethane.
The plate body is a silicon-based driving substrate or a low-temperature polycrystalline silicon driving substrate.
In order to solve the above technical problem, another technical solution adopted by the present application is: provided is a method for transferring a micro-component, the method comprising: aligning a supply substrate with a micro element with a transfer substrate, wherein the transfer substrate comprises a plate body and an adhesive layer arranged on the surface of one side of the plate body, the adhesive layer comprises a plurality of fusible conductive blocks arranged at intervals along the surface of one side of the plate body, a circuit is arranged in the plate body, and the circuit is connected with the fusible conductive blocks; fixing the micro-component by using a meltable conductive block; removing the supply substrate; the micro-components on the transfer substrate are transferred by means of a transfer head.
Wherein, still include after utilizing the conductive block of melting to fix microelement: the transfer substrate is energized to perform a first inspection of the microcomponents on the supply substrate.
Wherein, still include after removing the supply substrate: the transfer substrate is energized to perform a second inspection of the microcomponents remaining on the transfer substrate.
Wherein, the transfer substrate is defined with a display area and a non-display area, and the micro-component left on the transfer substrate after the second detection further comprises: removing the micro-elements which are detected to be unqualified in the display area by using a transfer head; and transferring the micro-components qualified for detection in the non-display area to the vacant part of the display area by using the transfer head, wherein the vacant part is formed after removing the micro-components unqualified for detection.
Wherein, before aligning the supply substrate with the micro-component and the transfer substrate, the method further comprises: insulating spacers are formed between fusible conductive bumps of the transfer substrate.
Wherein the transferring the micro-component on the transfer substrate by using the transfer head comprises: and selectively transferring the qualified micro-component on the transfer substrate by using the transfer head.
The beneficial effect of this application is: different from the situation of the prior art, the bonding and the debonding of the micro-element can be realized by selecting the meltable conductive blocks as the bonding agent of the transfer substrate and utilizing the melting and the solidification of the meltable conductive blocks, so that the transfer of the micro-element is realized. The electrical connection of the board body and the micro-component is realized by utilizing the conductivity of the fusible conductive block. By arranging the circuit in the plate body, the detection of the micro-element in the transfer process can be realized.
Drawings
FIG. 1 is a schematic view of a transfer substrate for a micro-device according to one embodiment of the present application;
FIG. 2 is a schematic view of a transfer substrate for a micro-device according to another embodiment of the present disclosure;
FIG. 3 is a schematic flow chart illustrating the fabrication process of a transfer substrate for micro-components according to one embodiment of the present application;
FIG. 4 is a schematic flow chart illustrating a method for transferring micro-components according to an embodiment of the present disclosure;
FIG. 5 is a schematic view of a transfer method for a micro-component to provide a micro-component in another embodiment of the present application;
fig. 6 is a schematic view of a transfer substrate and a supply substrate bonded together by a micro-component transfer method according to another embodiment of the present disclosure.
FIG. 7 is a schematic view of a transfer method for micro-components for peeling off a donor substrate in another embodiment of the present application;
FIG. 8 is a schematic view of a transfer method for micro-components for a second inspection of the micro-components in another embodiment of the present application;
FIG. 9 is a schematic view of another embodiment of the present application of a method for transferring micro-components to remove and repair defective micro-components;
fig. 10 is a schematic view of a transfer method of a micro-component according to another embodiment of the present application.
Detailed Description
In order to make the purpose, technical solution and effect of the present application clearer and clearer, the present application is further described in detail below with reference to the accompanying drawings and examples.
The application provides a Micro-element transfer method which can be used for transferring Micro light-emitting diode devices (Micro-LEDs), but is not limited to the Micro-LEDs, and can also be used for transferring other Micro-elements. For example, the Micro-component may be a diode Array of a Photo-diode Array detector (PDA), a MOS (Metal Oxide Semiconductor) device, a MEMS (Micro-Electro-Mechanical Systems) device of a Micro-Electro-Mechanical system (MEMS), and the like. In the present application, the type of micro-component is not limited, and is not limited to the examples listed herein. The transfer Micro-LED will be described herein as an example.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a transfer substrate of a micro device according to an embodiment of the present disclosure. In this embodiment, the transfer substrate 10 includes a plate body 110 and an adhesive layer 120 disposed on one side surface of the plate body 110.
The adhesive layer 120 includes a plurality of fusible conductive bumps 121 spaced along a surface of one side of the board body 110, and the fusible conductive bumps 121 may be used to temporarily fix the micro component. When transferring the micro-component, the micro-component is aligned with the fusible conductive block 121, the fusible conductive block 121 is melted to cover the micro-component, and then the fusible conductive block 121 is solidified, thereby fixing the micro-component.
A circuit (not shown) is disposed in the board body 110, the circuit is connected to the fusible conductive block 121, and the fusible conductive block 121 can be electrically connected to the micro component while fixing the micro component, so as to electrically connect the micro component to the circuit. Through set up the circuit in the plate body, after can melting conducting block 121 fixed the microelement, can switch on to the plate body to judge whether microelement can normally work, realize the detection of plate body to microelement.
In this embodiment, the bonding and debonding of the micro-component can be realized by selecting the fusible conductive block as the adhesive of the transfer substrate and utilizing the melting and solidification of the fusible conductive block, thereby realizing the transfer of the micro-component. The electrical connection of the board body and the micro-component is achieved by the conductivity of the fusible conductive bumps. By arranging the circuit in the plate body, the detection of the micro-element in the transfer process can be realized.
Referring to fig. 2, fig. 2 is a schematic structural diagram of a transfer substrate of a micro device according to another embodiment of the present disclosure. In this embodiment, the fusible conductive pieces 121 are filled with insulating spacers 130 therebetween. The flow of the fusible conductive piece 121 during melting can be restricted by providing the insulating spacer 130, on the one hand, and the board body 110 can be protected from laser damage, on the other hand.
In one embodiment, the donor substrate is generally peeled by laser peeling, and the transfer substrate is easily damaged by laser light when the donor substrate is peeled by laser irradiation, and the transfer substrate can be protected by providing the insulating spacer 130. Since the wavelength of the laser beam used for peeling off the donor substrate is generally smaller than 365nm, the insulating spacer 130 may be made of an organic material capable of absorbing light having a wavelength of 365nm or less, so as to absorb an excessive laser beam and protect the transfer substrate. Such as one or more of photosensitive epoxy, polyimide, styrene, and polyurethane, which have high absorbance at wavelengths below 365nm, so as to protect the board body 110, and particularly, the circuit in the board body 110, from being damaged. In other embodiments, depending on the wavelength of the laser light used, the insulating spacers of the corresponding material may also be selected to absorb light of the corresponding wavelength.
In one embodiment, the material of the fusible conductive piece 121 is a low melting point solder, and the low melting point solder is mostly some alloy material, such as one or more of indium tin alloy, indium bismuth alloy, and the like. These alloy materials have relatively low melting points, typically less than 200 ℃ and even less than 100 ℃. By selecting the low-melting-point solder, the melting and solidification of the solder can be realized at a lower temperature, and the micro-component and the board circuit are prevented from being damaged by overhigh heating temperature. In other embodiments, the material from which the conductive bumps 121 can be melted can also be a conductive adhesive with a reversible viscosity to allow bonding and debonding of the micro-components while allowing electrical connection to the micro-components.
In one embodiment, the board body 110 is used for providing a test current to the micro device, and the board body 110 may be a silicon-based driving substrate or a low temperature polysilicon driving substrate. The board body 110 may include a substrate layer and a circuit layer, wherein the substrate layer is a substrate made of a hard material to play a role of fixing and bearing. For example, a glass substrate, a polymer (resin) substrate, a sapphire substrate, a ceramic substrate, or the like can be used.
Referring to fig. 3, fig. 3 is a schematic flow chart illustrating a process for manufacturing a transfer substrate of a micro device according to an embodiment of the present disclosure. In this embodiment, the method for manufacturing a transfer substrate includes the steps of:
a board body 110 is provided, and the board body 110 is a silicon-based driving substrate.
A fusible conductive piece 121 is formed on the board body 110. The material of the fusible conductive piece 121 is low melting point solder, and the fusible conductive piece 121 may be formed by evaporating the low melting point solder on the plate body 110 by an evaporation method. In other embodiments, the fusible conductive block may be formed by other methods such as spin coating, but is not limited thereto.
A photoresist layer 131 is spin-coated on the side of the plate body 110 having the fusible conductive pieces 121, and the photoresist layer 131 is patterned to form the insulating spacers 130, thereby exposing the fusible conductive pieces 121, resulting in the transfer substrate 10.
The thickness of the photoresist layer 131 may be slightly greater than the height of the fusible conductive bumps 121, so that the height of the insulation spacers 130 is slightly greater than the height of the fusible conductive bumps 121, but the difference between the heights should be less than or equal to the height of the electrode of the micro-component. Through the arrangement, the height difference between the electrode surface and other surfaces of the micro-component can be compensated when the micro-component is fixed, so that the air below the micro-component can be discharged, the stability of the micro-component on the transfer substrate can be improved, and the risk of the micro-component cracking during laser stripping can be reduced. In other embodiments, the height of the insulating spacer 130 may also be less than or equal to the height of the fusible conductive bumps 121.
The application also provides a micro-component transfer method, which can realize the detection of the micro-component in the transfer process by using the transfer substrate provided by any one of the above embodiments. Referring to fig. 4, fig. 4 is a schematic flow chart illustrating a micro-component transferring method according to an embodiment of the present application, and it should be noted that the present embodiment is not limited to the flow chart shown in fig. 4 if substantially the same result is obtained. As shown in fig. 4, in this embodiment, the transfer method includes the steps of:
s410: the supply substrate with the micro-components is aligned with the transfer substrate.
Wherein, one side of the supply substrate with the micro-components faces the bearing surface of the transfer substrate, and the surface of the micro-components departing from the supply substrate is provided with electrodes.
The Micro element can be a Micro-LED, such as a gallium nitride (GaN) -based Micro-LED, and can be further divided into a purple light Micro-LED, a blue light Micro-LED, a green light Micro-LED and the like. At present, micro-LEDs are difficult to directly grow on a glass substrate, and the Micro-LEDs grown on a supply substrate need to be transferred onto the glass substrate by means of a transfer technology.
The donor substrate may be a sapphire substrate on which Micro-LEDs of a predetermined size and a predetermined type may be grown. In other embodiments, the supply substrate may be a silicon-based substrate or the like.
The transfer substrate is the substrate described in any of the above embodiments, and refer to the description of the above embodiments.
S420: the micro-components are secured using fusible conductive bumps.
The corresponding process operation can be selected according to the material of the meltable conductive block, the meltable conductive block is firstly melted to coat the micro-component, and then the meltable conductive block is solidified, so that the micro-component is fixed.
If the material of the meltable conductive block is low-melting-point welding material, the transfer substrate can be heated to melt the low-melting-point welding material, the micro-component and the transfer substrate are subjected to flip-chip welding process to connect the micro-component and the welding material, the room temperature is recovered, the welding material is solidified, and the micro-component is fixed.
S430: the supply substrate is removed.
The donor substrate may be peeled off by laser or by chemical etching. After removal of the donor substrate, the micro-components remain on the transfer substrate due to adhesion.
S440: the micro-components on the transfer substrate are transferred by means of a transfer head.
The transfer head may be one or more of Polydimethylsiloxane (PDMS) transfer head, electrostatic transfer head, and vacuum transfer head, and the nature of the transfer head is not limited herein. The transfer head can be selectively engaged with portions of the micro-component to effect partial transfer. At the same time, the adhesion force of the transfer head to the micro-component should be controlled to be greater than the adhesion force of the transfer substrate to the micro-component, so that the transfer head can smoothly pick up and transfer the micro-component from the transfer substrate.
In this embodiment, the micro-component may be tested twice during the transfer of the micro-component.
Firstly, incoming material detection is carried out. After the micro-component is fixed by the meltable conductive block, the transfer substrate can be electrified to detect whether the micro-component can normally work or not, and the micro-component can be used for evaluating the quality of supplied materials.
And secondly, detecting again after removing the supply substrate to screen out the dead spots in the micro-components. After the supply substrate is removed, the transfer substrate is energized to detect whether the micro-component can operate normally, and a defective pixel is screened out.
In one embodiment, after the micro-components removed from the supply substrate are detected, the detected defective pixels may be removed and repaired.
The detected dead pixel information can be transmitted to a control system for controlling the transfer head, the transfer substrate is heated to melt the meltable conductive blocks, the control system controls the transfer head to selectively remove the dead pixel, and meanwhile, good micro-elements are supplemented.
The transfer substrate can define a display area and a non-display area, can selectively remove defective pixels in the display area, and can supplement the vacancy of the display area by using micro elements qualified in the non-display area to ensure that the display area is completely lightened.
In the embodiment, the damaged micro-components can be found in time by detecting and removing the dead spots in the transferring process, so that the micro-components in the display area are all good products when being picked and transferred, and the abnormal micro-component detecting and repairing process is simplified.
The method of transferring the Micro device will be described in detail below by taking the Micro device as a Micro-LED and the material for melting the conductive bumps as a low melting point solder.
Referring to fig. 5, fig. 5 is a schematic diagram of a transfer method for providing a micro device according to another embodiment of the present application. In this embodiment, a plurality of Micro-LED devices 30 are sequentially arranged on the supply substrate 20, the Micro-LED devices 30 are illustrated as a flip-chip structure, and cathodes and anodes of the Micro-LED devices 30 are formed on a surface distant from the supply substrate 20. In other embodiments, the Micro-LED device 30 may also be a vertical structure, and the cathode and the anode of the Micro-LED device in the vertical structure are located at the upper and lower sides of the device.
Referring to fig. 2, in this embodiment, a transfer substrate 10 is used which is provided with a plurality of fusible conductive bumps 121 made of a low melting point solder and insulating spacers 130 filled between the plurality of fusible conductive bumps.
Referring to fig. 6, fig. 6 is a schematic diagram of a transfer substrate and a supply substrate attached to a transfer method of a micro device according to another embodiment of the present disclosure. And aligning the supply substrate 20 with the Micro-LED device 30 with the transfer substrate 10, heating the transfer substrate 10 to melt the solder, performing a flip-chip bonding process on the Micro-LED device 30 and the transfer substrate 10, and recovering the room temperature to fix the Micro-LED device 30 by the solder.
And electrifying the transfer substrate, and detecting incoming materials of the Micro-LED device 10.
Referring to fig. 7, fig. 7 is a schematic diagram of a supply substrate peeled off by a micro device transfer method according to another embodiment of the present application. The supply substrate 20 is laser-peeled, and the laser-peeled supply substrate 20 is removed to leave the Micro-LED device 30 on the transfer substrate 10. In other embodiments, the stripping may be performed by other stripping methods such as chemical etching.
Referring to fig. 8, fig. 8 is a schematic diagram illustrating a second inspection of a micro device by a micro device transfer method according to another embodiment of the present application. Electrifying the transfer substrate 10, screening dead pixels in the Micro-LED device 30, and transmitting dead pixel information to a control system for controlling the transfer head.
Referring to fig. 9, fig. 9 is a schematic diagram of a micro device transfer method for removing and repairing a defective micro device according to another embodiment of the present application. And heating the transfer substrate 10 to melt the solder, controlling the transfer head to selectively remove the dead spots of the Micro-LED devices 30 by the control system, and supplementing qualified Micro-LED devices. The Micro-LED device qualified in detection of the non-display area can be used for filling up the defective pixel vacancy of the display area so as to ensure that the display area is completely lightened.
Referring to fig. 10, fig. 10 is a schematic view illustrating a transfer method of a micro device according to another embodiment of the present application. In this embodiment, a transfer head 50 is provided, and the Micro-LED device 30 is attached to the transfer head 50 such that the Micro-LED device 30 is fixed by the transfer head 50. Heating the transfer substrate to melt the solder and release the Micro-LED device 30 from being fixed; the Micro-LED device 30 is picked up by means of a transfer head 50.
Providing a target substrate 60, arranging a driving circuit and a contact electrode 601 on the target substrate 60, aligning and bonding the transfer head 50 and the target substrate 60, and connecting the cathode and the anode of the Micro-LED device 30 with the contact electrode 601 in a combined manner. Therefore, the Micro-LED device is transferred.
In an embodiment, when the Micro-LED device is in a flip-chip structure, after the Micro-LED device is combined with a target substrate, the Micro-LED device may be packaged, and a packaging layer is formed on the Micro-LED device to protect the Micro-LED device and the contact electrode. The specific packaging material and packaging process may be selected from conventional materials and processes, and are not limited herein.
In another embodiment, when the Micro-LED device is a vertical structure, the cathode and anode are located at the upper and lower sides of the device, and after the transfer of the device is completed, an electrode on the other side needs to be fabricated. The specific manufacturing method can adopt a conventional process, and is not limited herein.
According to the scheme, the incoming material detection of the LED epitaxial wafer and the detection, elimination and repair of the defective points in the LED array on the transfer substrate after laser stripping can be realized through the electrical connection of the low-melting-point solder on the transfer substrate and the electrodes on the LED chip, the method is simple and easy to implement, the detection after the processes of incoming material, temporary bonding, laser stripping and the like of the LED can be realized by using one transfer substrate, and the electrodes on the LED chip can not be damaged basically. Through melting and solidification of the low-melting-point solder, the transfer substrate can be used as a temporary substrate in a batch transfer process and can also be used for detecting LEDs, and the low-melting-point solder can be used as a temporary bonding material, so that selective pickup of the LED chip on the transfer substrate can be realized by matching with a transfer head, the utilization rate of the LED chip is improved, and the size of pixels in a screen body is regulated. The photoresist on the transfer substrate can prevent the low-melting-point welding material from flowing when being melted, and can protect the transfer substrate from being damaged when being stripped by laser, so that the service life of the transfer substrate is prolonged.
The above description is only for the purpose of illustrating embodiments of the present application and is not intended to limit the scope of the present application, and all modifications of equivalent structures and equivalent processes, which are made by the contents of the specification and the drawings of the present application or are directly or indirectly applied to other related technical fields, are also included in the scope of the present application.

Claims (9)

1. A transfer substrate for microcomponents, comprising:
a plate body;
the bonding layer is arranged on the surface of one side of the plate body and comprises a plurality of meltable conductive blocks arranged at intervals along the surface of one side of the plate body, insulating spacers are filled among the meltable conductive blocks, and the insulating spacers are made of organic materials capable of absorbing light with the wavelength below 365 nanometers;
wherein, be provided with the circuit in the plate body, the circuit is connected the conductive block that melts, the conductive block that melts is used for temporarily fixing microelement.
2. The transfer substrate according to claim 1,
the material of the fusible conductive block is low-melting-point solder.
3. The transfer substrate according to claim 2,
the low-melting-point solder is one or the combination of indium tin alloy and indium bismuth alloy.
4. The transfer substrate according to claim 1,
the organic material is one or more of photosensitive epoxy resin, polyimide, styrene and polyurethane.
5. A method for transferring a micro-component, comprising:
aligning a supply substrate with a micro element with a transfer substrate, wherein the transfer substrate comprises a plate body and an adhesive layer arranged on one side surface of the plate body, the adhesive layer comprises a plurality of meltable conductive blocks arranged at intervals along one side surface of the plate body, a circuit is arranged in the plate body and connected with the meltable conductive blocks, an insulating spacer is filled between the meltable conductive blocks, and the insulating spacer is made of an organic material capable of absorbing light with a wavelength below 365 nanometers;
securing the micro-component with the meltable conductive mass;
removing the supply substrate;
and transferring the micro-component on the transfer substrate by using a transfer head.
6. The method for transferring a microcomponent of claim 5, wherein said fixing of the microcomponent with a meltable conductive mass comprises:
energizing the transfer substrate to perform a first inspection of the micro-components on the supply substrate.
7. The method for transferring microcomponents as claimed in claim 5, characterized in that said removal of the donor substrate comprises, after:
and electrifying the transfer substrate to perform second detection on the micro-components left on the transfer substrate.
8. A method for transferring microcomponents as claimed in claim 7, characterized in that said transfer substrate defines a display zone and a non-display zone, and in that said second inspection of said microcomponents remaining on the transfer substrate comprises:
removing the micro-components which are detected to be unqualified in the display area by using a transfer head;
and transferring the micro-elements qualified for detection in the non-display area to the vacant positions of the display area formed after the micro-elements unqualified for detection are removed by using a transfer head.
9. The method of claim 5, wherein the transferring the micro-component on the transfer substrate by the transfer head comprises:
and selectively transferring the qualified micro-components on the transfer substrate by using the transfer head.
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