CN112768333A - Etching machine structure for controlling magnetic field of reaction chamber by shielding magnetic lines - Google Patents
Etching machine structure for controlling magnetic field of reaction chamber by shielding magnetic lines Download PDFInfo
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- CN112768333A CN112768333A CN201911073017.9A CN201911073017A CN112768333A CN 112768333 A CN112768333 A CN 112768333A CN 201911073017 A CN201911073017 A CN 201911073017A CN 112768333 A CN112768333 A CN 112768333A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 90
- 238000005530 etching Methods 0.000 title claims abstract description 24
- 230000000903 blocking effect Effects 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000004907 flux Effects 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 4
- 230000000873 masking effect Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000005108 dry cleaning Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
Abstract
The invention provides an etching machine structure for controlling a magnetic field of a reaction chamber by shielding magnetic lines, which comprises: the first plasma reaction cavity is provided with a first reaction chamber; the first coil module is arranged around the periphery of the first reaction chamber; and the first magnetic line shielding module is arranged around the periphery of the first coil module. By the implementation of the invention, the magnetic lines of force and/or electromagnetic waves of the first coil module can be blocked and/or reflected to diffuse outwards and the shape of the magnetic lines of force can be controlled, so that more manufacturing process parameters can be effectively created, and various products can be produced more precisely.
Description
Technical Field
The present invention relates to an etcher structure with magnetic shielding for controlling the magnetic field of a reaction chamber, and more particularly to an etcher structure with magnetic shielding for controlling the magnetic field of a reaction chamber, which is used for controlling the plasma reaction such as Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), etching, ion implantation, photoresist stripping, or dry cleaning … of a reaction chamber in a manufacturing process.
Background
In the manufacture of semiconductor integrated circuits, for example, the growth of thin films of different materials, Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), etching, ion implantation, photoresist stripping, or dry cleaning … of process chambers, is commonly achieved by plasma techniques.
In the field of vacuum coating, proper application of high-density plasma can not only achieve dense coating quality, but also complete coating at low temperature, and avoid adverse effects of high temperature on coating quality, so how to obtain high-density plasma is a key manufacturing process technology developed by various equipment manufacturers.
In the etching process, the distribution and control of the plasma density are more critical to the etching rate and the etching uniformity, so that how to effectively control the magnetic field in the vacuum coating or etching process becomes an important parameter in the process.
Disclosure of Invention
The invention relates to an etching machine structure for controlling a magnetic field of a reaction chamber by shielding magnetic lines, which mainly solves the problem of how to create more parameters capable of controlling electric plasma so as to more precisely produce various products.
The invention provides an etching machine structure for controlling a magnetic field of a reaction chamber by shielding magnetic lines, which comprises: a first plasma reaction chamber having a first reaction chamber; the first coil module is arranged around the periphery of the first reaction chamber; and the first magnetic line shielding module is arranged around the periphery of the first coil module and used for blocking and/or reflecting the magnetic lines and/or electromagnetic waves of the first coil module from diffusing outwards and controlling the shape of the magnetic lines.
Preferably, the first magnetic line shielding module has a plurality of shielding shutters, and the length of each shielding shutter is greater than or equal to the vertical height of the first coil module.
Preferably, it further has: the second plasma reaction cavity is provided with a second reaction chamber communicated with the first reaction chamber; the second coil module is arranged around the periphery of the second reaction chamber; and the second magnetic line shielding module is arranged around the periphery of the second coil module and used for blocking and/or reflecting the magnetic lines and/or electromagnetic waves of the second coil module from diffusing outwards and controlling the shape of the magnetic lines.
The invention also provides an etching machine structure for controlling the magnetic field of the reaction chamber by shielding the magnetic force lines, which comprises: a first plasma reaction chamber having a first reaction chamber; the first coil module is arranged around the periphery of the first reaction chamber; the second plasma reaction cavity is provided with a second reaction chamber communicated with the first reaction chamber; the second coil module is arranged around the periphery of the second reaction chamber; and the second magnetic line shielding module is arranged around the periphery of the second coil module and used for blocking and/or reflecting the magnetic lines and/or electromagnetic waves of the second coil module from diffusing outwards and controlling the shape of the magnetic lines.
Preferably, the second magnetic line shielding module has a plurality of shielding louvers, and the length of each shielding louver is greater than or equal to the vertical height of the second coil module.
Preferably, the opening or closing of the shutter is controlled by a control unit.
Preferably, the control unit performs full-area control on the shutter.
Preferably, the control unit performs 2-equal-area control on the shutter.
Preferably, the control unit performs 4-equal-area control on the shutter.
Preferably, the bottom of any of the shielding shutters controlled by the area has a shutter gear slidably coupled to a gear row of a gear disc, the gear disc is slidably coupled to the slide rail, the gear row of the gear disc is driven by a motor gear of a motor, and the control unit controls the motor to rotate forward and backward to open or close the shielding shutter.
By implementing the invention, at least the following progressive effects can be achieved:
first, the plasma density can be effectively controlled.
And secondly, various changes or combined magnetic fields can be generated. And
and thirdly, the manufacturing process can be more diversified.
So that those skilled in the art can readily understand the disclosure, the claims and the drawings, and can easily understand the objects and advantages of the present invention, the detailed features and advantages of the present invention will be described in detail in the embodiments.
Drawings
FIG. 1 is a first cross-sectional view of an etching machine with a magnetic field line shielding control reaction chamber.
FIG. 2 is a second cross-sectional view of an etching machine with a magnetic field line shielding control reaction chamber.
FIG. 3A is a diagram of a third cross-sectional view of an etching machine with a magnetic field line shielding control reaction chamber.
FIG. 3B is a diagram of a third embodiment of the structure of an etching machine with a magnetic field line shielding control reaction chamber.
Figure 4 is a diagram of an embodiment of a shutter and its driving machine unit.
FIG. 5 is a diagram of an embodiment of the total coverage variation of the first or the second masking module.
FIG. 6 is a diagram of an embodiment of 2-fold equal-area coverage variation of the first or second masking module.
FIG. 7 is a diagram of an embodiment of a 4-degree-of-division-area-ratio variation of the first or second masking module.
Fig. 8 is a comparison of plasma energy absorption characteristics before and after the use of the masking module.
FIG. 9 is a graph of plasma density variation for different diameter shadow modules simulated in a half chamber.
FIG. 10 is a table of plasma density without and with a shadow module at different powers.
FIG. 11 is a graph showing the comparison of the electric field intensity and the magnetic flux density.
FIG. 12 is a graph showing the comparative example of electric field intensity and magnetic flux density.
[ description of main element symbols ]
100: first embodiment of etching machine structure with magnetic line shielding control reaction chamber magnetic field
200: second embodiment of etching machine structure with magnetic line shielding control reaction chamber magnetic field
300: etching machine structure with magnetic line shielding control reaction chamber magnetic field
110: first plasma reaction chamber 111: a first reaction chamber
120: the first coil module 130: first magnetic line shielding module
131: blind louvers 131a,131 b: 2 group units
131a,131b,131c,131d …: 4 group units 132: shutter gear
140: the fluted disc 141: tooth row
142: slide rail 151: motor with a stator having a stator core
152: the motor gear 210: second plasma reaction chamber
220: the second coil module 230: second magnetic line shielding module
211: second reaction chamber 30: control unit
310: full zone control 320: 2 equal division zone control
330: 4 equal division area control d 1: length of the shutter
d 2: vertical height d3 of first coil module: vertical height of second coil module
L1: characteristic curve L2: characteristic curve
A: and a region B: region(s)
Detailed Description
As shown in fig. 1, a first embodiment 100 of an etcher structure for controlling a magnetic field of a reaction chamber by shielding magnetic lines of force comprises: a first plasma reaction chamber 110; a first coil module 120; and a first flux shield module 130.
As shown in fig. 2, a second embodiment 200 of the structure of the etching machine for controlling the magnetic field of the reaction chamber by shielding magnetic lines is disclosed, which is to further provide the first embodiment 100 with: a second plasma reaction chamber 210; a second coil module 220; and a second flux shield module 230.
As shown in fig. 3, a third embodiment 300 of a magnetic field line shielding control etching machine structure for controlling the magnetic field of a reaction chamber is provided, which includes: a first plasma reaction chamber 110; a first coil module 120; a second plasma reaction chamber 210; a second coil module 220; and a second flux shield module 230.
The elements of the above embodiments are described in detail as follows:
as shown in fig. 1 to 3B, a first plasma reaction chamber 110 having a first reaction chamber 111; and a second plasma reaction chamber 210 disposed above the first plasma reaction chamber 110, wherein the second plasma reaction chamber 210 has a second reaction chamber 211 communicated with the first reaction chamber 111.
The first reaction chamber 111 and the second reaction chamber 211 are plasma reaction chambers configured to perform plasma reactions such as Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), etching, ion implantation, photoresist stripping, or dry cleaning … of a process chamber.
The first coil module 120 is disposed around the first reaction chamber 111 to provide high frequency electromagnetic wave energy for plasma reaction in the first reaction chamber 111. Similarly, the second coil module 220 is disposed around the second reaction chamber 211 to provide high frequency electromagnetic wave energy for plasma reaction in the second reaction chamber 211.
The first magnetic line shielding module 130 may have a plurality of shielding louvers 131, and a length d1 of each shielding louver is greater than or equal to a vertical height d2 of the first coil module, so as to effectively shield or reflect magnetic lines of force and/or electromagnetic wave energy of the first coil module 120.
Similarly, the second magnetic line shielding module 230 has a plurality of shielding louvers 131, and the length d1 of each shielding louver is greater than or equal to the vertical height d3 of the second coil module, so as to effectively shield or reflect the magnetic lines of force and/or electromagnetic wave energy of the second coil module 220.
As shown in fig. 4, the bottom of the shielding louver 131 of the first magnetic line shielding module 130 or the second magnetic line shielding module 230 has a louver gear 132, each louver gear 132 is slidably coupled to the gear row 141 of the gear disc 140, the gear disc 140 is slidably coupled to the slide rail 142, the gear row 141 is driven by the motor gear 152, such as the motor 151, and finally, the control unit 30 controls the motor 151 to rotate forward and backward, so as to open or close the shielding louver 131.
The first magnetic line shielding module 130 and the second magnetic line shielding module 230 are respectively disposed around the peripheries of the first coil module 120 and the second coil module 220, so as to respectively block and/or reflect the magnetic lines and/or electromagnetic waves of the first coil module 120 and the second coil module 220 from diffusing outwards, and control the shapes of the magnetic lines, thereby respectively changing the plasma energy of the first reaction chamber 111 and the second reaction chamber 211 and increasing the operation range.
As shown in fig. 5 to 7, the opening or closing of the shielding shutter 131 of the first magnetic line shielding module 130 or the second magnetic line shielding module 230 of the above embodiments can be controlled by the control unit 30. Further, according to the control mode, the control mode can be divided into the full area control 310, the 2-equal area control 320, the 4-equal area control 330 …, and the like.
As shown in fig. 5, the full-range control 310 synchronously adjusts all the blinds 131 to the same specific angle at the same time in a synchronous manner.
As shown in fig. 6, the 2-partition control 320 is to divide all the shielding louvers 131 into 2 groups 131a,131b, so that all the shielding louvers 131 in each group are synchronously adjusted to the same specific angle.
As shown in fig. 7, the 4-equal division control 330 divides all the shielding shutters 131 into 4 groups 131a,131b,131c, and 131d, so that all the shielding shutters 131 in each group are synchronously adjusted to the same specific angle.
In order to effectively prove the improved efficacy of the above embodiments, the second plasma reaction chamber 210 is taken as an example with the second magnetic line shielding module 230, and the following description is provided for the related simulations:
as shown in fig. 8, when the second flux shielding module 230 is not used, it is known from the characteristic curve L1 that, in the region a: when the second coil module 220 inputs lower power energy, a low power absorption effect will be generated, so that the plasma cannot be effectively maintained; also in the region B: when the second coil module 220 inputs higher power energy, it will easily cause partial damage.
When the second flux shield module 230 is used, it is known from the characteristic curve L2 that, in the region a: when the second coil module 220 inputs lower power energy, the plasma can be effectively maintained; also in the region B: when the second coil module 220 inputs higher power energy, it is less likely to cause partial damage.
As shown in fig. 9, the simulation with high neon in the second plasma reaction chamber 210 shows that the use of the second magnetic line shielding module 230 is important and the design must be added to optimize the magnetic field, when the second magnetic line shielding module 230 is not used (fig. 9a), the magnetic lines of force are outwardly divergent and the plasma density is low; however, if the second magnetic shielding module 230 is used (fig. 9b), the magnetic line converges toward the second reaction chamber 211 and the plasma density becomes high, i.e., the red intensity region increases.
As shown in fig. 10, it is known from the related simulation results that when the sizes of the second reaction chamber 211 are all 70mm, the plasma density of the second reaction chamber 211 is lower than that of the second magnetic shielding module 230 when the output power of the second coil module 220 is 300W or 400W, but the plasma density is not lower than that of the second reaction chamber 211 when the second magnetic shielding module 230 is not used, but the plasma density is not lower than that when the second magnetic shielding module 230 is used.
As shown in fig. 11, fig. 11(a) is a bottom view of the electric field intensity of the second reaction chamber 211, and fig. 11(b) is a graph of the magnetic flux density of the second reaction chamber 211, and it can be known from fig. 11(a) that when the left half of the second magnetic line shielding module 230 is in the open state and the right half of the second magnetic line shielding module 230 is in the closed state, the right half of the magnetic field is pushed inward, so that the magnetic flux density on the right side is higher than the magnetic flux density on the left side in fig. 11 (b).
As shown in fig. 12, fig. 12(a) is a bottom view of the electric field intensity of the second reaction chamber 211, and fig. 12(b) is a graph of the magnetic flux density of the second reaction chamber 211, and it can be known from fig. 12(a) that when the left half and the right half of the second magnetic line shielding modules 230 are both in an open state, the magnetic flux densities of the left side and the right side in fig. 12(b) are the same.
While the foregoing embodiments have been described in a specific context of preferred embodiments, it will be appreciated by those skilled in the art that the above-described embodiments are merely illustrative of the nature of the invention, which is not intended to limit the scope of the invention.
Claims (10)
1. An etching machine structure for controlling the magnetic field of a reaction chamber by shielding magnetic lines is characterized by comprising:
a first plasma reaction chamber having a first reaction chamber;
the first coil module is arranged around the periphery of the first reaction chamber; and
the first magnetic line shielding module is arranged around the periphery of the first coil module and used for blocking and/or reflecting the magnetic lines and/or electromagnetic waves of the first coil module from diffusing outwards and controlling the shape of the magnetic lines.
2. The etcher structure of claim 1 wherein: the first magnetic line shielding module is provided with a plurality of shielding shutters, and the length of each shielding shutter is larger than or equal to the vertical height of the first coil module.
3. The etcher structure of claim 1 or 2, further comprising:
the second plasma reaction cavity is provided with a second reaction chamber communicated with the first reaction chamber;
the second coil module is arranged around the periphery of the second reaction chamber; and
and the second magnetic line shielding module is arranged around the periphery of the second coil module and used for blocking and/or reflecting the magnetic lines and/or electromagnetic waves of the second coil module from diffusing outwards and controlling the shape of the magnetic lines.
4. An etching machine structure for controlling the magnetic field of a reaction chamber by shielding magnetic lines is characterized by comprising:
a first plasma reaction chamber having a first reaction chamber;
the first coil module is arranged around the periphery of the first reaction chamber;
the second plasma reaction cavity is provided with a second reaction chamber communicated with the first reaction chamber;
the second coil module is arranged around the periphery of the second reaction chamber; and
and the second magnetic line shielding module is arranged around the periphery of the second coil module and used for blocking and/or reflecting the magnetic lines and/or electromagnetic waves of the second coil module from diffusing outwards and controlling the shape of the magnetic lines.
5. The etcher structure of claim 3 or 4, wherein: the second magnetic line shielding module is provided with a plurality of shielding shutters, and the length of each shielding shutter is greater than or equal to the vertical height of the second coil module.
6. The etcher structure of claim 2 or 5, wherein: wherein the opening or closing of the shutter is controlled by a control unit.
7. The etcher structure of claim 6 wherein: wherein the control unit performs full-area control on the shielding shutter.
8. The etcher structure of claim 6 wherein: wherein the control unit performs 2-equal division control on the shielding shutter.
9. The etcher structure of claim 6 wherein: wherein the control unit performs 4 equal division control on the shielding shutter.
10. The etcher structure of any one of claims 7 to 9, wherein: the bottom of the shielding shutter controlled by any one of the areas is provided with a shutter gear which is in sliding combination with the tooth row of the fluted disc, the fluted disc is in sliding combination with the slide rail, the tooth row of the fluted disc is driven by a motor gear of a motor, and the opening or closing of the shielding shutter is achieved under the condition that the control unit controls the motor to rotate forwards and backwards.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911073017.9A CN112768333A (en) | 2019-11-05 | 2019-11-05 | Etching machine structure for controlling magnetic field of reaction chamber by shielding magnetic lines |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911073017.9A CN112768333A (en) | 2019-11-05 | 2019-11-05 | Etching machine structure for controlling magnetic field of reaction chamber by shielding magnetic lines |
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|---|---|
| CN112768333A true CN112768333A (en) | 2021-05-07 |
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|---|---|---|---|
| CN201911073017.9A Pending CN112768333A (en) | 2019-11-05 | 2019-11-05 | Etching machine structure for controlling magnetic field of reaction chamber by shielding magnetic lines |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6071372A (en) * | 1997-06-05 | 2000-06-06 | Applied Materials, Inc. | RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls |
| CN1630936A (en) * | 2002-02-08 | 2005-06-22 | 权光虎 | Device for producing inductively coupled plasma and method thereof |
| CN103002649A (en) * | 2011-09-13 | 2013-03-27 | 中微半导体设备(上海)有限公司 | Inductive coupling plasma processor and plasma substrate processing method |
| US20130160950A1 (en) * | 2011-12-22 | 2013-06-27 | Samsung Electronics Co., Ltd. | Plasma processing apparatus |
| CN103305800A (en) * | 2012-03-13 | 2013-09-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering equipment |
| CN106298422A (en) * | 2015-06-29 | 2017-01-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and semiconductor processing equipment |
| CN107369604A (en) * | 2016-05-12 | 2017-11-21 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
| CN211350567U (en) * | 2019-11-05 | 2020-08-25 | 聚昌科技股份有限公司 | Etching machine structure for controlling magnetic field of reaction chamber by shielding magnetic lines |
-
2019
- 2019-11-05 CN CN201911073017.9A patent/CN112768333A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6071372A (en) * | 1997-06-05 | 2000-06-06 | Applied Materials, Inc. | RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls |
| CN1630936A (en) * | 2002-02-08 | 2005-06-22 | 权光虎 | Device for producing inductively coupled plasma and method thereof |
| CN103002649A (en) * | 2011-09-13 | 2013-03-27 | 中微半导体设备(上海)有限公司 | Inductive coupling plasma processor and plasma substrate processing method |
| US20130160950A1 (en) * | 2011-12-22 | 2013-06-27 | Samsung Electronics Co., Ltd. | Plasma processing apparatus |
| CN103305800A (en) * | 2012-03-13 | 2013-09-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering equipment |
| CN106298422A (en) * | 2015-06-29 | 2017-01-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and semiconductor processing equipment |
| CN107369604A (en) * | 2016-05-12 | 2017-11-21 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
| CN211350567U (en) * | 2019-11-05 | 2020-08-25 | 聚昌科技股份有限公司 | Etching machine structure for controlling magnetic field of reaction chamber by shielding magnetic lines |
Non-Patent Citations (1)
| Title |
|---|
| 程嘉;朱煜;汪劲松;: "感应耦合等离子体刻蚀机二维放电模拟", 半导体学报, no. 06, 15 June 2007 (2007-06-15) * |
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Effective date of registration: 20220517 Address after: Dunhua South Road, Taiwan Taipei 2 China Daan District No. 38 14 floor Applicant after: HERMES-EPITEK Corp. Address before: 16 Guangfu South Road, Shengli village, Hukou Township, Hsinchu County Applicant before: ADVANCED SYSTEM TECHNOLOGY Co.,Ltd. |