CN112736037A - Automotive high-power integrated packaging module - Google Patents
Automotive high-power integrated packaging module Download PDFInfo
- Publication number
- CN112736037A CN112736037A CN202110160288.9A CN202110160288A CN112736037A CN 112736037 A CN112736037 A CN 112736037A CN 202110160288 A CN202110160288 A CN 202110160288A CN 112736037 A CN112736037 A CN 112736037A
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- insulating substrate
- power
- welding
- terminal
- chip part
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- 238000004806 packaging method and process Methods 0.000 title abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 238000003466 welding Methods 0.000 claims abstract description 40
- 239000004033 plastic Substances 0.000 claims abstract description 16
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052802 copper Inorganic materials 0.000 claims abstract description 14
- 239000010949 copper Substances 0.000 claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 230000017525 heat dissipation Effects 0.000 claims abstract description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000005476 soldering Methods 0.000 claims abstract description 4
- 238000001746 injection moulding Methods 0.000 claims description 13
- 239000011135 tin Substances 0.000 claims description 13
- 239000010410 layer Substances 0.000 claims description 11
- 229910007637 SnAg Inorganic materials 0.000 claims description 9
- 229910007116 SnPb Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 239000000741 silica gel Substances 0.000 claims description 6
- 229910002027 silica gel Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 229910000838 Al alloy Inorganic materials 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000003973 paint Substances 0.000 claims description 3
- 239000002344 surface layer Substances 0.000 claims description 3
- 239000000565 sealant Substances 0.000 claims description 2
- 238000005538 encapsulation Methods 0.000 claims 1
- 230000010354 integration Effects 0.000 description 5
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- -1 polybutylene terephthalate Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
- H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention discloses a vehicle-mounted high-power integrated packaging module, which comprises a power module body and a plastic shell used for packaging the power module body, wherein the power module body mainly comprises a chip part, an insulating substrate, a power terminal, a signal terminal, a thermistor and a heat dissipation substrate; the chip part comprises an insulated gate bipolar transistor and a diode chip, the signal terminal, the insulated gate bipolar transistor and the diode chip are all welded on a conductive copper layer of the insulating substrate through tin soldering, and the power terminal is welded on the conductive copper layer of the insulating substrate through ultrasonic welding; the chip parts and the conducting layers of the corresponding insulating substrates are electrically connected through aluminum wire bonding.
Description
Technical Field
The invention relates to the technical field of electronic devices, in particular to a vehicle-mounted high-power integrated packaging module.
Background
A power module is a power driver that combines power electronics and integrated circuit technology. The intelligent power module gains a bigger and bigger market due to the advantages of high integration level, high reliability and the like, is particularly suitable for frequency converters of driving motors and various inverter power supplies, and is a common power electronic device for variable-frequency speed regulation, metallurgical machinery, electric traction, servo drive and variable-frequency household appliances. With the continuous development of the new energy automobile industry, the expected maturity of a power chip is increased, and at present, an Insulated Gate Bipolar Transistor (IGBT) module is more and more widely applied to the fields of frequency converters, inverter welding machines, induction heating, rail transit, wind energy, solar power generation, new energy automobiles and the like, and particularly, the power module has higher requirements on the structure, the circuit reliability and the integration level of the power module.
Disclosure of Invention
The technical problem to be solved by the present invention is to provide a high power integrated package module for vehicle, which can effectively improve the reliability and integration of the structure and the circuit.
The invention aims to provide a vehicle-mounted high-power integrated packaging module, which comprises a power module body and a plastic shell for packaging the power module body, wherein the power module body mainly comprises a chip part, an insulating substrate, a power terminal, a signal terminal, a thermistor and a heat dissipation substrate; the chip part comprises an insulated gate bipolar transistor and a diode chip, the signal terminal, the insulated gate bipolar transistor and the diode chip are all welded on a conductive copper layer of the insulating substrate through tin soldering, and the power terminal is welded on the conductive copper layer of the insulating substrate through ultrasonic welding; the chip part and the conducting layer of the corresponding insulating substrate are electrically connected through aluminum wire bonding, and insulating silica gel for improving the pressure resistance of all elements is filled between the power module body and the plastic shell.
Furthermore, the power terminals are distributed on two sides of the length direction of the insulating substrate, and the signal terminals are arranged in an upper area of the insulating substrate perpendicular to the insulating substrate; the chip part, the insulating substrate, the thermistor, the power terminal, the ultrasonic bonding area, the signal terminal base welding area and the aluminum wire are all covered with silica gel which is formed by insulating paint and used for improving the insulation and pressure resistance of all devices.
Furthermore, the power terminal and the signal terminal are both made of pure copper or copper alloy materials, and the surface layer is made of bare copper or one of gold, nickel and tin-plated weldable metal materials; the plastic shell is made of high-temperature-resistant plastic with good insulating property; the power terminal is wrapped by the injection molding shell in an injection molding mode through an injection molding insert process; the aluminum wire is made of pure aluminum or aluminum alloy materials and is bonded and connected to the chip part and the insulating substrate in an ultrasonic mode.
Further, the chip part and the insulating substrate are connected by welding through one of Sn welding materials contained in SnPb, SnAg, SnAgCu and PbSnAg, and the welding temperature is between 150 and 350 ℃; the power terminal and the insulating substrate are connected through ultrasonic welding or welding by one of Sn welding materials contained in SnPb, SnAg, SnAgCu and PbSnAg, and the welding temperature is between 150 and 350 ℃; the signal terminal and the insulating substrate and the thermistor and the insulating substrate are connected through one of Sn-containing welding materials of SnPb, SnAg, SnAgCu and PbSnAg in a welding mode, and the welding temperature is 150-350 degrees.
The invention has the beneficial technical effects that: according to the invention, the power terminal is wrapped by the injection molding shell in a local injection molding manner, so that the thermal stress resistance and the external installation attraction of the power terminal are improved, and the integral firmness of the power terminal is improved. The power terminal, the signal terminal and the insulating substrate (DBC) are directly ultrasonically welded, so that the fatigue defect of the welding of the terminal in the traditional process is eliminated, the reliability of the connection of the power terminal, the signal terminal and the insulating substrate (DBC) is improved, and the high-reliability insulated gate bipolar transistor module is manufactured. Meanwhile, the signal terminal is directly welded on the conducting layer corresponding to the insulated substrate (DBC), so that the size of the module is further reduced on the premise of ensuring the current level, and the integration level of the module is improved.
Drawings
FIG. 1 is a schematic view of the overall structure of the present invention;
FIG. 2 is a side view of the structure of FIG. 1;
FIG. 3 is an enlarged schematic view of the structure at A in FIG. 2;
FIG. 4 is a schematic view of the structure of FIG. 2 in the direction B;
FIG. 5 is a schematic diagram of a connection circuit according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood by those skilled in the art, the present invention is further described with reference to the accompanying drawings and examples.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "left", "right", "inside", "outside", "lateral", "vertical", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description of the present invention, and do not indicate or imply that the device or element referred to must have a specific orientation, and thus, should not be construed as limiting the present invention.
As shown in fig. 1-5, the vehicle-mounted high-power integrated package module of the present invention includes a power module body and a plastic casing 1 for packaging the power module body, wherein the power module body mainly includes a chip portion 2, an insulating substrate 3, a power terminal 4, a signal terminal 5, a thermistor 6 and a heat dissipation substrate 7, the insulating substrate 3 and the plastic casing 1 are bonded by a sealant and fixedly connected by screws, and the heat dissipation substrate 7 is disposed on one side of the bottom of the insulating substrate 3 to improve the heat dissipation performance of the power module body; the chip part 2 comprises an insulated gate bipolar transistor and a diode chip, the signal terminal 5, the insulated gate bipolar transistor and the diode chip are welded on a conductive copper layer of the insulating substrate 3 through tin soldering, and the power terminal 4 is welded on the conductive copper layer of the insulating substrate 3 through ultrasonic welding; the chip part and the conducting layer of the corresponding insulating substrate 3 are electrically connected through aluminum wire bonding, and insulating silica gel for improving the pressure resistance of all elements is filled between the power module body and the plastic shell 1.
Referring to fig. 1, the power terminals 4 are distributed on two sides of the insulating substrate 3 in the length direction, and the signal terminals 5 are arranged in the upper area of the insulating substrate perpendicular to the insulating substrate 3; the chip part 2, the insulating substrate 3, the thermistor 6, the power terminal 4, the ultrasonic bonding area, the signal terminal base welding area and the aluminum wire are all covered with silica gel which is formed by insulating paint and used for improving the insulation and pressure resistance of all devices.
Referring to fig. 1-5, the power terminal 4 and the signal terminal 5 are both made of pure copper or copper alloy material, and the surface layer is made of bare copper or one of gold, nickel and tin-plated weldable metal materials; the plastic shell 1 is made of high-temperature-resistant and good-insulation plastic, such as PBT (polybutylene terephthalate), PPS (polyphenylene sulfide), nylon and the like; the power terminal 4 is wrapped by the injection molding shell in an injection molding manner through an injection molding insert process; the aluminum wire is made of pure aluminum or aluminum alloy materials and is bonded and connected to the chip part and the insulating substrate in an ultrasonic mode. The chip part 2 and the insulating substrate 3 are connected by welding through one of Sn welding materials contained in SnPb, SnAg, SnAgCu and PbSnAg, and the welding temperature is between 150 and 350 ℃; the power terminal 4 and the insulating substrate 3 are connected through one of Sn welding materials in SnPb, SnAg, SnAgCu and PbSnAg in an ultrasonic welding or welding way, and the welding temperature is between 150 and 350 ℃; the signal terminal 5 and the insulating substrate 3 and the thermistor 6 and the insulating substrate 3 are connected by welding through one of Sn welding materials contained in SnPb, SnAg, SnAgCu and PbSnAg, and the welding temperature is 150-350 ℃. According to the invention, the power terminal is wrapped by the injection molding shell in a local injection molding manner, so that the thermal stress resistance and the external installation attraction of the power terminal are improved, and the integral firmness of the power terminal is improved. The power terminal, the signal terminal and the insulating substrate (DBC) are directly ultrasonically welded, so that the fatigue defect of the welding of the terminal in the traditional process is eliminated, the reliability of the connection of the power terminal, the signal terminal and the insulating substrate (DBC) is improved, and the high-reliability insulated gate bipolar transistor module is manufactured. Meanwhile, the signal terminal is directly welded on the conducting layer corresponding to the insulated substrate (DBC), so that the size of the module is further reduced on the premise of ensuring the current level, and the integration level of the module is improved.
The specific embodiments described herein are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (4)
1. The utility model provides an automobile-used high-power integrated encapsulation module, includes power module body and is used for encapsulating the plastic casing of power module body, its characterized in that: the power module body mainly comprises a chip part, an insulating substrate, a power terminal, a signal terminal, a thermistor and a heat dissipation substrate, wherein the insulating substrate is bonded with the plastic shell through sealant and is fixedly connected with the plastic shell through a screw, and the heat dissipation substrate is arranged on one side of the bottom of the insulating substrate to improve the heat dissipation performance of the power module body; the chip part comprises an insulated gate bipolar transistor and a diode chip, the signal terminal, the insulated gate bipolar transistor and the diode chip are all welded on a conductive copper layer of the insulating substrate through tin soldering, and the power terminal is welded on the conductive copper layer of the insulating substrate through ultrasonic welding; the chip part and the conducting layer of the corresponding insulating substrate are electrically connected through aluminum wire bonding, and insulating silica gel for improving the pressure resistance of all elements is filled between the power module body and the plastic shell.
2. The vehicular high-power integrated package module according to claim 1, wherein: the power terminals are distributed on two sides of the length direction of the insulating substrate, and the signal terminals are arranged in the upper area of the insulating substrate in a manner of being perpendicular to the insulating substrate; the chip part, the insulating substrate, the thermistor, the power terminal, the ultrasonic bonding area, the signal terminal base welding area and the aluminum wire are all covered with silica gel which is formed by insulating paint and used for improving the insulation and pressure resistance of all devices.
3. The vehicular high-power integrated package module according to claim 2, wherein: the power terminal and the signal terminal are both made of pure copper or copper alloy materials, and the surface layer is one of bare copper or electroplated gold, nickel and tin weldable metal materials; the plastic shell is made of high-temperature-resistant plastic with good insulating property; the power terminal is wrapped by the injection molding shell in an injection molding mode through an injection molding insert process; the aluminum wire is made of pure aluminum or aluminum alloy materials and is bonded and connected to the chip part and the insulating substrate in an ultrasonic mode.
4. The vehicular high-power integrated package module according to claim 2 or 3, wherein: the chip part and the insulating substrate are connected by welding through one of Sn welding materials contained in SnPb, SnAg, SnAgCu and PbSnAg, and the welding temperature is between 150 and 350 ℃; the power terminal and the insulating substrate are connected through ultrasonic welding or welding by one of Sn welding materials contained in SnPb, SnAg, SnAgCu and PbSnAg, and the welding temperature is between 150 and 350 ℃; the signal terminal and the insulating substrate and the thermistor and the insulating substrate are connected through one of Sn-containing welding materials of SnPb, SnAg, SnAgCu and PbSnAg in a welding mode, and the welding temperature is 150-350 degrees.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110160288.9A CN112736037A (en) | 2021-02-05 | 2021-02-05 | Automotive high-power integrated packaging module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110160288.9A CN112736037A (en) | 2021-02-05 | 2021-02-05 | Automotive high-power integrated packaging module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112736037A true CN112736037A (en) | 2021-04-30 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110160288.9A Pending CN112736037A (en) | 2021-02-05 | 2021-02-05 | Automotive high-power integrated packaging module |
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| Country | Link |
|---|---|
| CN (1) | CN112736037A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114023735A (en) * | 2021-09-30 | 2022-02-08 | 上海道之科技有限公司 | Power module for hybrid vehicle |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101542702A (en) * | 2008-06-05 | 2009-09-23 | 香港应用科技研究院有限公司 | Bonding method of three dimensional wafer lamination based on silicon through holes |
| US20090294974A1 (en) * | 2008-06-02 | 2009-12-03 | Chi Keun Vincent Leung | Bonding method for through-silicon-via based 3d wafer stacking |
| CN109449134A (en) * | 2018-12-04 | 2019-03-08 | 嘉兴斯达半导体股份有限公司 | A kind of automobile-used grade high-reliability power module |
| CN210467832U (en) * | 2019-07-16 | 2020-05-05 | 上海道之科技有限公司 | High-integration-level power module for vehicle |
| CN215008188U (en) * | 2021-02-05 | 2021-12-03 | 上海道之科技有限公司 | Vehicle-mounted high-power integrated packaging module |
-
2021
- 2021-02-05 CN CN202110160288.9A patent/CN112736037A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090294974A1 (en) * | 2008-06-02 | 2009-12-03 | Chi Keun Vincent Leung | Bonding method for through-silicon-via based 3d wafer stacking |
| CN101542702A (en) * | 2008-06-05 | 2009-09-23 | 香港应用科技研究院有限公司 | Bonding method of three dimensional wafer lamination based on silicon through holes |
| CN109449134A (en) * | 2018-12-04 | 2019-03-08 | 嘉兴斯达半导体股份有限公司 | A kind of automobile-used grade high-reliability power module |
| CN210467832U (en) * | 2019-07-16 | 2020-05-05 | 上海道之科技有限公司 | High-integration-level power module for vehicle |
| CN215008188U (en) * | 2021-02-05 | 2021-12-03 | 上海道之科技有限公司 | Vehicle-mounted high-power integrated packaging module |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114023735A (en) * | 2021-09-30 | 2022-02-08 | 上海道之科技有限公司 | Power module for hybrid vehicle |
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