CN112653420A - High-sound-speed high-frequency low-frequency temperature coefficient narrow-band filter and manufacturing method thereof - Google Patents
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Abstract
The invention relates to a narrow-band filter with a low frequency temperature coefficient and a manufacturing method thereof. The narrow band filter includes at least one Bragg reflection layer, a c-axis oriented single crystal AlN high acoustic velocity material piezoelectric layer, and IDT electrodes. Each Bragg reflection layer is formed by superposing a high-sound-velocity material substrate layer and an LGS low-sound-velocity material layer with Euler angles of (0 degrees, 140 degrees and 22.5 degrees) or (0 degrees, 140 degrees and 25 degrees), and the LGS low-sound-velocity material layer has weak piezoelectric property. By utilizing the weak piezoelectric property and two special tangents of the LGS, the narrow-band filter with high sound velocity, high frequency, high Q value, low electromechanical coupling coefficient and no stray can be obtained, and the narrow-band filter has the advantages of still having low frequency temperature coefficient under high frequency, unobvious frequency drift and the like.
Description
Technical Field
The invention relates to an acoustic wave resonator/filter in mobile communication equipment, in particular to a narrow-band filter with high acoustic speed, high frequency and low frequency temperature coefficient in the radio frequency front end of a mobile phone.
Background
The radio frequency front end of the mobile equipment is a functional area between a radio frequency transceiver and an antenna, and consists of devices such as a power amplifier, an antenna switch, a filter, a duplexer, a low noise amplifier and the like.
Among them, there are currently three major types of filter areas, Surface Acoustic Wave (SAW), Bulk Acoustic Wave (BAW), and thin film bulk acoustic wave (FBAR) filters.
And among them, the SAW filter is the mainstream of the low frequency and middle frequency band; its technology has evolved from Normal-SAW, TC-SAW, and further to IHP-SAW, as well as future XBAR technologies.
Existing IHP-SAW technology uses a hybrid technology similar to the multilayer reflective gate structure of SAW device + SMR-BAW device. The mixed structure technology not only endows the SAW device with the characteristic of simple single-side processing technology, but also endows the SMR-BAW device with the characteristic of low energy leakage.
The IHP-SAW filter is a development direction of the SAW filter at present due to the excellent temperature compensation performance and the lower insertion loss of the IHP-SAW filter, which can compare with or even exceed part of BAW and FBAR filters.
The IHP-SAW filter has the following three advantages:
1. the IHP-SAW filter with high Q value adopts a multi-layer reflection gate structure of SMR-BAW to focus more surface acoustic wave energy on the surface of the substrate, thereby reducing the loss of acoustic waves in the transmission process and improving the Q value of the device. The high Q characteristic (Qmax-3000, traditional SAW Qmax-1000) makes it have high out-of-band rejection, steep passband edge roll-off, and high isolation.
2. The TCF of IHP-SAW can reach less than or equal to-20 ppm/DEG C, and the further optimization design can reach 0 ppm/DEG C.
3. The high heat dissipation performance of the device can ensure the stable operation of the device under high power.
The SMR-BAW multilayer reflection gate structure of the IHP-SAW filter is realized by alternately stacking high acoustic impedance and low acoustic impedance. The low acoustic impedance material mostly adopts TCF material with positive temperature coefficient, such as silicon dioxide; the high acoustic impedance layer is usually made of a material with a low temperature coefficient, such as SiN, W, etc.
However, the conventional IHP-SAW technology has the following problems:
firstly, the working frequency of the IHP-SAW filter is about 3.5GHz, and the high-frequency requirement of 5G communication can not be met (generally more than 5G is needed);
the power of the IHP-SAW filter is 35dBm, and the high-power requirement of 5G communication cannot be met;
and the Q value of the IHP-SAW filter is reduced along with the increase of the working frequency, and when the working frequency is 3.5GHz, the Q value is about 2200, so that the requirements of high Q value and low insertion loss of 5G communication are not met.
Therefore, a high operating frequency, high power, high Q value, and low insertion loss filter is needed in the 5G communication field.
Disclosure of Invention
This summary is provided to introduce a selection of concepts in a simplified form that are further described below in the detailed description. This summary is not intended to identify key features or essential features of the claimed subject matter; nor is it intended to be used as an aid in determining or limiting the scope of the claimed subject matter.
The surface acoustic wave device adopts the silicon carbide single crystal substrate as the substrate layer, has high sound velocity, and has the advantages of high crystal quality, good consistency and the like compared with a diamond self-supporting substrate, diamond and a diamond-like carbon film.
The surface acoustic wave device adopts the single crystal AlN as a piezoelectric material, the sound velocity of the single crystal AlN is as high as 11000m/s, the single crystal AlN has good piezoelectric and dielectric properties, and the C-axis oriented AlN thin film has excellent material properties such as low dielectric and acoustic loss, high sound velocity, thermal stability and the like. The low acoustic impedance layer is made of LGS (lanthanum gallium silicate) material, and the electromechanical coupling coefficient of LGS crystal is 17% and is about quartz (SiO)2) 2-3 times of the quartz crystal, but has the same temperature stability as quartz.
The narrow band filter of low frequency temperature coefficient of the invention comprises: at least one Bragg reflection layer, wherein each Bragg reflection layer is formed by superposing a high-sound-velocity material substrate layer and an LGS low-sound-velocity material layer; a c-axis oriented single crystal AlN high acoustic velocity material piezoelectric layer formed on the LGS low acoustic velocity material layer of the Bragg reflection layer at the uppermost layer, wherein the temperature coefficient of the frequency of the piezoelectric layer is negative; and an electrode disposed on the piezoelectric layer. Wherein the Euler angle of the LGS low sound velocity material layer is (0 DEG, 140 DEG, 22.5 DEG) or (0 DEG, 140 DEG, 25 DEG), and the LGS low sound velocity material layer has a weak piezoelectric property.
The thickness of the substrate layer of the high-sound-velocity material is 5 lambda, the thickness of the LGS low-sound-velocity material layer is 0.1 lambda, the thickness of the piezoelectric layer of the single-crystal AlN high-sound-velocity material is 0.5 lambda, the width of the electrodes and the distance between the electrodes are both 0.25 lambda, and lambda is the wavelength of sound waves excited by the electrodes.
Each Bragg reflection layer is realized by plating an LGS layer on the substrate layer of the high sound velocity material in a PECVD, CVD, MOCVD and MBE mode, the number of the Bragg reflection layers is 1, 2, 3, 4, 5, 6, 7, 8 or 9, and the Bragg reflection layers are mutually superposed.
The high sound velocity material of the high sound velocity material substrate layer is selected from Si, SiN and Al2O33C-SiC, W, 4H-SiC or 6H-SiC.
The electrode is an IDT electrode and is composed of one of Ti, Al, Cu, Au, Pt, Ag, Pd and Ni, an alloy thereof, or a laminate thereof. The electrode is completely embedded into the piezoelectric layer of the single-crystal AlN high-sound-velocity material or is positioned on the piezoelectric layer of the single-crystal AlN high-sound-velocity material. The electrodes may be upper and lower double layer electrodes. The duty cycle of the electrodes is one of 0.4, 0.5 and 0.6.
The method for manufacturing the narrow-band filter with the low frequency temperature coefficient comprises the following steps: providing a substrate layer of a high acoustic velocity material; plating an LGS low-sound-velocity material layer on the high-sound-velocity material substrate layer, wherein the Euler angle of the LGS low-sound-velocity material layer is (0 degrees, 140 degrees, 22.5 degrees) or (0 degrees, 140 degrees, 25 degrees); forming a single crystal AlN high-sound-velocity material piezoelectric layer on the LGS low-sound-velocity material layer; and forming an IDT electrode on the piezoelectric layer of the single crystal AlN high-sound-velocity material.
These and other features and advantages will become apparent upon reading the following detailed description and upon reference to the accompanying drawings. It is to be understood that both the foregoing general description and the following detailed description are explanatory only and are not restrictive of aspects as claimed.
Drawings
The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which specific embodiments of the invention are shown. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the application. Also, like reference numerals are used to refer to like parts throughout the drawings. The drawings are only schematic and are not to be construed as limiting the actual dimensional proportions.
Fig. 1 is a structural model schematic diagram of an IHP resonator in which electrodes of a narrow band filter are buried in a piezoelectric layer according to the present invention;
fig. 2 is a schematic structural view of an IHP resonator of fig. 1 with electrodes embedded in the piezoelectric layer;
fig. 3 is a schematic structural view of an IHP resonator in which electrodes of a narrow band filter are not embedded in a piezoelectric layer according to another embodiment of the present invention;
fig. 4 is a schematic structural diagram of an IHP resonator with a 2-layer bragg reflector according to the present invention;
FIG. 5 is a schematic structural diagram of an IHP resonator with an n-layer Bragg reflection layer according to the present invention;
FIG. 6 is an admittance diagram of an IHP resonator with an LGS Euler angle of (0, 140, 22.5) according to the present invention;
FIG. 7 is an admittance diagram of an IHP resonator with an LGS Euler angle of (0, 140, 25) in accordance with the present invention;
FIG. 8 is a graph of frequency versus temperature for the IHP resonator of FIG. 6 at an LGS Euler angle of (0, 140, 22.5);
FIG. 9 is a graph of TCF values versus temperature for the IHP resonator of FIG. 6 at an LGS Euler angle of (0, 140, 22.5);
FIG. 10 is a graph of the frequency versus temperature for the IHP resonator of FIG. 7 at an LGS Euler angle of (0, 140, 25);
FIG. 11 is a graph of TCF values versus temperature for the IHP resonator of FIG. 7 at an LGS Euler angle of (0, 140, 25);
fig. 12 is a flowchart of a manufacturing process of an IHP resonator of the narrow band filter of the present invention.
Detailed Description
The present invention will now be described more fully hereinafter with reference to the accompanying drawings, in which specific embodiments of the invention are shown. Various advantages and benefits of the present invention will become apparent to those of ordinary skill in the art upon reading the following detailed description of the specific embodiments. It should be understood, however, that the present invention may be embodied in various forms and should not be limited to the embodiments set forth herein. The following embodiments are provided so that the invention may be more fully understood. Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by those of skill in the art to which this application belongs.
Fig. 1 and 2 are a structural model diagram of an IHP resonator and a schematic diagram of an IHP resonator of a narrow band filter in which electrodes are embedded in a piezoelectric layer according to an embodiment of the present invention.
As can be seen from the figure, the resonator comprises a substrate layer 101, a low acoustic velocity layer 102, a piezoelectric layer 103 and an electrode 104.
The substrate layer 101 of the IHP resonator is made of high-sound-velocity material, has high sound impedance, and can be made of Si, SiN or Al2O33C-SiC, W, 4H-SiC or 6H-SiC, with a thickness of 5 λ (λ is the wavelength of the acoustic wave excited by the electrode fingers, λ being 1 μm).
The piezoelectric layer 103 is made of single crystal AlN with c-axis orientation and is made of a high-sound-velocity material, so that the central frequency f of the device can be greatly improved01/2(fp + fs), meets the requirement of 5G communication, and has a piezoelectric layer thickness of 0.5 λ.
Interdigital transducer (IDT) electrodes 104 are arranged on the piezoelectric layer, in the embodiment of FIGS. 1 and 2, the electrodes are all embedded in the piezoelectric layer, the width of the electrodes is the same as the distance between the electrodes, and the width of the electrodes and the distance between the electrodes are both 0.25 lambda; the IDT electrode is composed of a metal or alloy such as Ti, Al, Cu, Au, Pt, Ag, Pd, Ni, or a laminate of these metals or alloys, and has an electromechanical coupling coefficient k2＝(π2/8)(fp2-fs2)/fs2Wherein fs is the resonance frequency and fp is the antiresonance frequency. The duty cycle of the electrodes may be selected from one of 0.4, 0.5, 0.6.
A layer of the LGS low acoustic velocity layer 102 is interposed between the piezoelectric layer 103 and the high acoustic velocity substrate layer 101, preferably at euler angles of (0 °,140 °,22.5 °) and (0 °,140 °,25 °). The LGS is a low acoustic impedance material with piezoelectric properties. The LGS has different frequency temperature coefficients TCF according to different tangential directions, different frequency temperature coefficients are obtained through the two tangential directions, and the TCF value of the device can be reduced by overlapping the frequency temperature coefficients with the frequency temperature coefficients of the single crystal AlN.
The thickness of the LGS layer is 0.1 lambda, and the LGS layer can be plated on the substrate layer of the high-sound-velocity material in a PECVD (plasma enhanced chemical vapor deposition), CVD (chemical vapor deposition), MOCVD (metal organic chemical vapor deposition), MBE (moving beam) mode and other modes.
Coefficient of thermal expansion CTE of LGS 5.15 × 10-6K-1Coefficient of thermal expansion CTE of single crystal AlN 5.2X 10-6K-1The two coefficients of thermal expansion are matched.
The LGS layer has low sound velocity, and forms a Bragg reflection layer together with the substrate layer made of high sound velocity material, so that sound waves are prevented from leaking from the direction of the substrate layer, and the Q value of the device can be greatly improved.
Although fig. 1 and 2 show only an example of one bragg reflective layer, the bragg reflective layer may be multi-layered, that is, a stack of sets of the high sound velocity substrate layer 101 and the LGS low sound velocity layer 102, according to the present invention. This is further illustrated in fig. 4, 5 below.
Fig. 3 is a schematic diagram of an IHP resonator with electrodes of a narrow band filter not embedded in the piezoelectric layer according to another embodiment of the present invention. From a comparison of fig. 2 and 3, it can be seen that the electrodes of fig. 3 are not embedded in the piezoelectric layer, but the same effect can be achieved. The present invention preferably has electrodes embedded in the piezoelectric layer.
According to a further embodiment of the invention, the arrangement of the electrodes may also take the form of upper and lower double layer electrodes. (not shown in the drawings)
Fig. 4 is a schematic structural view of an IHP resonator having a 2-layer bragg reflector according to the present invention. The Bragg reflection layer number n is 2, and the substrate layer comprising two layers of high-sound-velocity materials and the two layers of low-sound-velocity materials (LGS layers) are alternately superposed, so that the electromechanical coupling coefficient k of the device can be reduced2The Q value is increased.
Fig. 5 is a schematic structural diagram of an IHP resonator with multiple (n-layer) bragg reflective layers, where n may be preferably 2-9 layers, and the substrate layer of high sound velocity material and the low sound velocity layer (LGS layer) are alternately stacked, and those skilled in the art can select the corresponding number of layers according to design requirements.
Fig. 6, 8, 9 relate to IHP resonators with an LGS euler angle of (0 °,140 °,22.5 °) according to the present invention, their admittance, frequency versus temperature, and TCF value versus temperature plots, respectively.
As can be seen from fig. 6: its sound speed V is 7691m/s, fs is 7.69GHz, fp is 7.692GHz, f07.691GHz and relative bandwidth 2Xk2，k20.06%, relative bandwidth is 0.12%, relative bandwidth of narrow band is less than 5%, relative bandwidth of wide band is 5% to 25%, relative bandwidth of ultra wide band is more than 25%. 11978, has a very high Q value, has very low device insertion loss, and is free of spurs.
It can be seen from fig. 8 that the resonant frequency and the anti-resonant frequency shift to the left.
The working temperature is-40 deg.C-80 deg.C as shown in FIG. 9, and TCF is 1/(T-T)0)×(fT-f0)/f0，T0Room temperature 25 ℃, T is the actual working temperature, f0Is the operating frequency at room temperature, fTAs can be seen from the calculation of the graph, the TCF is-13.9 ppm/c and less than-20 ppm/c when the actual operating temperature is 100 c.
Fig. 7, 10, 11 relate to IHP resonators with (0 °,140 °,25 °) euler angles of LGS according to the present invention, their admittance, frequency versus temperature, and TCF value versus temperature plots, respectively.
As can be seen from fig. 7: its sound speed V is 7693.5m/s, fs is 7.693GHz, fp is 7.694GHz, f07.6935GHz and relative bandwidth 2Xk2，k20.03%, relative bandwidth of 0.06%, relative bandwidth of narrow band less than 5%, relative bandwidth of wide band between 5% and 25%, relative bandwidth of ultra wide band more than 25%. 12042, with very high Q, very low device insertion loss, and no spurs.
It can be seen from fig. 10 that the resonant frequency and the anti-resonant frequency thereof are shifted to the left.
From fig. 11, the operating temperature was-40 to 80 ℃, and from the calculation, when the actual operating temperature was 100 ℃, the TCF was-15.6 ppm/c and was less than-20 ppm/c.
Fig. 12 is a method of the present invention for manufacturing a narrow band filter with a low frequency temperature coefficient, comprising:
at step 1201, a substrate layer of high acoustic velocity material is provided.The high acoustic velocity material with high acoustic impedance can be Si, SiN, Al2O33C-SiC, W, 4H-SiC or 6H-SiC, the thickness of the substrate layer is 5 lambda. λ is the wavelength of the acoustic wave excited by the electrode fingers, and λ is 1 μm.
At step 1202, plating an LGS low acoustic velocity material layer on a high acoustic velocity material substrate layer, the LGS low acoustic velocity material layer having an euler angle of (0 °,140 °,22.5 °) or (0 °,140 °,25 °); the thickness of the LGS layer is 0.1 lambda, and the LGS layer can be formed by PECVD, CVD, MOCVD, MBE and the like.
The substrate layer of the high sound velocity material and the LGS layer of the low sound velocity material formed in the previous step together form a Bragg reflection layer. The number of layers of the corresponding bragg reflector layer may be selected by those skilled in the art according to design requirements. When the number of layers is two or more, the process returns to step 1201 after the end step 1202 to form another bragg reflector layer.
At step 1203, a piezoelectric layer of single crystal AlN high acoustic velocity material is formed over the uppermost LGS low acoustic velocity material layer, the material of which is single crystal AlN with a c-axis orientation, the piezoelectric layer having a thickness of 0.5 λ.
In step 1204, IDT electrodes are formed on the piezoelectric layer of single crystal AlN high acoustic velocity material. The electrodes may or may not be embedded in the piezoelectric layer, and the width of the electrodes and the distance between the electrodes are the same, and are both 0.25 lambda. The IDT electrode is made of a metal or alloy such as Ti, Al, Cu, Au, Pt, Ag, Pd, and Ni, or a laminate of these metals or alloys. The duty cycle of the electrodes may be selected from one of 0.4, 0.5, 0.6.
The piezoelectric layer of the invention adopts c-axis single crystal AlN, the low sound velocity layer adopts LGS, and the narrow-band filter with high sound velocity, high frequency, high Q value, low electromechanical coupling coefficient and no stray can be obtained by utilizing the weak piezoelectric property and two special tangential directions of the LGS.
The two LGSs with different tangential directions, namely Euler angles of (0 degrees, 140 degrees, 22.5 degrees) and (0 degrees, 140 degrees and 25 degrees) respectively ensure that the filter designed by the invention still has the advantages of low frequency temperature coefficient, unobvious frequency drift and the like under high frequency.
The above embodiments are only used for illustrating the technical solutions of the present application, and not for limiting the same; although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present disclosure, and the present disclosure should be construed as being covered by the claims and the specification.
Claims (10)
1. A low frequency temperature coefficient narrow band filter comprising:
at least one Bragg reflection layer, wherein each Bragg reflection layer is formed by superposing a high-sound-velocity material substrate layer and an LGS low-sound-velocity material layer;
a single crystal AlN high acoustic velocity material piezoelectric layer formed on the LGS low acoustic velocity material layer of the Bragg reflection layer of the uppermost layer, the piezoelectric layer having a negative temperature coefficient of frequency; and
an electrode arranged on the piezoelectric layer of the monocrystal AlN high-sound-velocity material,
wherein the Euler angle of the LGS low sound velocity material layer is (0 °,140 °,22.5 °) or (0 °,140 °,25 °), the LGS low sound velocity material layer having a weak piezoelectric property.
2. The narrow band filter of claim 1, wherein the substrate layer of high acoustic velocity material has a thickness of 5 λ, the LGS low acoustic velocity material layer has a thickness of 0.1 λ, the piezoelectric layer of single crystal AlN high acoustic velocity material has a thickness of 0.5 λ, and the width of the electrodes and the spacing between the electrodes are both 0.25 λ, where λ is the wavelength of the acoustic wave excited by the electrodes.
3. The narrow band filter of claim 1, wherein each bragg reflector is formed by coating an LGS layer on the substrate layer of the high acoustic velocity material by PECVD, CVD, MOCVD or MBE, the number of the bragg reflectors is 1, 2, 3, 4, 5, 6, 7, 8 or 9, and the bragg reflectors are stacked on top of each other.
4. The narrow band filter of claim 1, wherein the single crystal AlN high acoustic velocity material of the piezoelectric layer is c-axis oriented.
5. The narrow band filter of claim 1, wherein the high acoustic velocity material of the high acoustic velocity material backing layer is selected from the group consisting of Si, SiN, Al2O33C-SiC, W, 4H-SiC or 6H-SiC.
6. The narrow band filter according to claim 1, wherein the electrode is an IDT electrode composed of one of Ti, Al, Cu, Au, Pt, Ag, Pd, and Ni, or an alloy thereof, or a laminate thereof.
7. The narrowband filter of claim 6, wherein the electrodes are fully embedded in or on the single crystal AlN high acoustic velocity material piezoelectric layer.
8. The narrow band filter according to claim 6, wherein said electrodes are upper and lower double layer electrodes.
9. The narrowband filter of claim 6, wherein the duty cycle of the electrodes takes one of 0.4, 0.5, 0.6.
10. A method for fabricating a narrow band filter of low frequency temperature coefficient, comprising:
providing a substrate layer of a high acoustic velocity material;
plating an LGS low sound velocity material layer on the high sound velocity material substrate layer, wherein the Euler angle of the LGS low sound velocity material layer is (0 degrees, 140 degrees, 22.5 degrees) or (0 degrees, 140 degrees, 25 degrees);
forming a single crystal AlN high-sound-velocity material piezoelectric layer on the LGS low-sound-velocity material layer; and
and forming an IDT electrode on the piezoelectric layer of the single-crystal AlN high-sound-speed material.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2024001872A1 (en) * | 2022-06-30 | 2024-01-04 | 华为技术有限公司 | Surface acoustic wave filter, apparatus, and electronic device |
| WO2024217181A1 (en) * | 2023-04-21 | 2024-10-24 | 华为技术有限公司 | Surface acoustic wave device and electronic device |
Citations (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6005325A (en) * | 1996-06-21 | 1999-12-21 | Tdk Corporation | Surface acoustic wave device |
| JP2000165195A (en) * | 1998-09-21 | 2000-06-16 | Murata Mfg Co Ltd | Surface acoustic wave device, surface acoustic wave filter, duplexer and communication equipment |
| JP2000261277A (en) * | 1999-03-05 | 2000-09-22 | Tdk Corp | Surface acoustic wave device |
| JP2000261276A (en) * | 1999-03-05 | 2000-09-22 | Tdk Corp | Surface acoustic wave filter |
| JP2001077654A (en) * | 1999-08-31 | 2001-03-23 | Mitsubishi Materials Corp | Surface acoustic wave element |
| JP2001196895A (en) * | 2000-01-11 | 2001-07-19 | Seiko Epson Corp | Surface acoustic wave device |
| JP2001267879A (en) * | 2000-03-15 | 2001-09-28 | Matsushita Electric Ind Co Ltd | Surface acoustic wave filter |
| JP2006282426A (en) * | 2005-03-31 | 2006-10-19 | Mitsubishi Materials Corp | Langasite single crystal and its production method |
| CN101644611A (en) * | 2009-04-23 | 2010-02-10 | 中国科学院声学研究所 | Surface acoustic wave sensor with low loss and high temperature stability |
| CN101820266A (en) * | 2009-12-15 | 2010-09-01 | 义乌市华凯电子科技有限公司 | High-temperature stability acoustic surface wave filter suitable for high frequency |
| US20110266925A1 (en) * | 2010-04-29 | 2011-11-03 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Resonator device including electrode with buried temperature compensating layer |
| CN102904546A (en) * | 2012-08-30 | 2013-01-30 | 中兴通讯股份有限公司 | Piezoelectric acoustic wave resonator with adjustable temperature compensation capability |
| JP2013174553A (en) * | 2012-02-27 | 2013-09-05 | Citizen Finetech Miyota Co Ltd | Pressure detection device, and internal combustion engine equipped with pressure detection device |
| CN103891139A (en) * | 2011-10-24 | 2014-06-25 | 株式会社村田制作所 | Surface acoustic wave device |
| CN107317560A (en) * | 2017-05-11 | 2017-11-03 | 华南理工大学 | A kind of temperature-compensating surface acoustic wave device and preparation method thereof |
| CN109217842A (en) * | 2018-07-26 | 2019-01-15 | 清华大学 | The SAW filter and preparation method thereof of nearly zero-temperature coefficient |
| US20190253035A1 (en) * | 2017-02-16 | 2019-08-15 | Acoustic Wave Device Labo. Co., Ltd. | Acoustic wave element and method for manufacturing same |
| CN110324022A (en) * | 2019-06-28 | 2019-10-11 | 瑞声科技(新加坡)有限公司 | Resonator and preparation method thereof |
| CN110427822A (en) * | 2019-06-28 | 2019-11-08 | 江西沃格光电股份有限公司 | Ultrasonic fingerprint identification device and its processing method, electronic equipment |
| CN110632172A (en) * | 2019-09-27 | 2019-12-31 | 金华伏安光电科技有限公司 | Acoustic detector based on cavitation phenomenon |
| CN111295770A (en) * | 2017-07-07 | 2020-06-16 | 艾维亚纳分子技术有限公司 | Multiplexed surface acoustic wave sensor with delay line coding |
| CN111587536A (en) * | 2018-01-12 | 2020-08-25 | 株式会社村田制作所 | Elastic wave device, multiplexer, high-frequency front-end circuit, and communication device |
| CN111587534A (en) * | 2018-01-12 | 2020-08-25 | 株式会社村田制作所 | Elastic wave device, multiplexer, high-frequency front-end circuit, and communication device |
-
2020
- 2020-12-18 CN CN202011501413.XA patent/CN112653420A/en active Pending
Patent Citations (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6005325A (en) * | 1996-06-21 | 1999-12-21 | Tdk Corporation | Surface acoustic wave device |
| JP2000165195A (en) * | 1998-09-21 | 2000-06-16 | Murata Mfg Co Ltd | Surface acoustic wave device, surface acoustic wave filter, duplexer and communication equipment |
| JP2000261277A (en) * | 1999-03-05 | 2000-09-22 | Tdk Corp | Surface acoustic wave device |
| JP2000261276A (en) * | 1999-03-05 | 2000-09-22 | Tdk Corp | Surface acoustic wave filter |
| JP2001077654A (en) * | 1999-08-31 | 2001-03-23 | Mitsubishi Materials Corp | Surface acoustic wave element |
| JP2001196895A (en) * | 2000-01-11 | 2001-07-19 | Seiko Epson Corp | Surface acoustic wave device |
| JP2001267879A (en) * | 2000-03-15 | 2001-09-28 | Matsushita Electric Ind Co Ltd | Surface acoustic wave filter |
| JP2006282426A (en) * | 2005-03-31 | 2006-10-19 | Mitsubishi Materials Corp | Langasite single crystal and its production method |
| CN101644611A (en) * | 2009-04-23 | 2010-02-10 | 中国科学院声学研究所 | Surface acoustic wave sensor with low loss and high temperature stability |
| CN101820266A (en) * | 2009-12-15 | 2010-09-01 | 义乌市华凯电子科技有限公司 | High-temperature stability acoustic surface wave filter suitable for high frequency |
| US20110266925A1 (en) * | 2010-04-29 | 2011-11-03 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Resonator device including electrode with buried temperature compensating layer |
| CN103891139A (en) * | 2011-10-24 | 2014-06-25 | 株式会社村田制作所 | Surface acoustic wave device |
| JP2013174553A (en) * | 2012-02-27 | 2013-09-05 | Citizen Finetech Miyota Co Ltd | Pressure detection device, and internal combustion engine equipped with pressure detection device |
| CN102904546A (en) * | 2012-08-30 | 2013-01-30 | 中兴通讯股份有限公司 | Piezoelectric acoustic wave resonator with adjustable temperature compensation capability |
| US20190253035A1 (en) * | 2017-02-16 | 2019-08-15 | Acoustic Wave Device Labo. Co., Ltd. | Acoustic wave element and method for manufacturing same |
| CN107317560A (en) * | 2017-05-11 | 2017-11-03 | 华南理工大学 | A kind of temperature-compensating surface acoustic wave device and preparation method thereof |
| CN111295770A (en) * | 2017-07-07 | 2020-06-16 | 艾维亚纳分子技术有限公司 | Multiplexed surface acoustic wave sensor with delay line coding |
| CN111587536A (en) * | 2018-01-12 | 2020-08-25 | 株式会社村田制作所 | Elastic wave device, multiplexer, high-frequency front-end circuit, and communication device |
| CN111587534A (en) * | 2018-01-12 | 2020-08-25 | 株式会社村田制作所 | Elastic wave device, multiplexer, high-frequency front-end circuit, and communication device |
| CN109217842A (en) * | 2018-07-26 | 2019-01-15 | 清华大学 | The SAW filter and preparation method thereof of nearly zero-temperature coefficient |
| CN110324022A (en) * | 2019-06-28 | 2019-10-11 | 瑞声科技(新加坡)有限公司 | Resonator and preparation method thereof |
| CN110427822A (en) * | 2019-06-28 | 2019-11-08 | 江西沃格光电股份有限公司 | Ultrasonic fingerprint identification device and its processing method, electronic equipment |
| CN110632172A (en) * | 2019-09-27 | 2019-12-31 | 金华伏安光电科技有限公司 | Acoustic detector based on cavitation phenomenon |
Non-Patent Citations (3)
| Title |
|---|
| 喻恒: "LGS声表面波双模温度传感器研究", 《中国优秀硕士学位论文全文数据库信息科技辑》, 15 September 2018 (2018-09-15), pages 140 - 65 * |
| 寇云峰: "AlN/CNx复合薄膜的PLD制备及其机械性能的研究", 《中国优秀硕士学位论文全文数据库工程科技Ⅰ辑》, 15 May 2016 (2016-05-15), pages 020 - 199 * |
| 张亚非: "《薄膜体声波谐振器的原理、设计与应用》", 31 January 2011, 海交通大学出版社, pages: 7 - 9 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024001872A1 (en) * | 2022-06-30 | 2024-01-04 | 华为技术有限公司 | Surface acoustic wave filter, apparatus, and electronic device |
| WO2024217181A1 (en) * | 2023-04-21 | 2024-10-24 | 华为技术有限公司 | Surface acoustic wave device and electronic device |
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