CN112652707B - Magnetic tunnel junction structure and magnetic random access memory thereof - Google Patents
Magnetic tunnel junction structure and magnetic random access memory thereof Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
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Abstract
The application provides a magnetic random access memory's magnetic tunnel knot structure, anti-ferromagnetic layer in the magnetic tunnel knot structure sets up two ferromagnetic layers and perpendicular anisotropy enhancement layer and lattice conversion layer between the two, guides the lattice generation close-packed hexagonal structure of second ferromagnetic layer to the realization has the anti-ferromagnetic layer of face-centered cubic crystal structure to have body-centered cubic to pile up lattice conversion and strong ferromagnetic magnetic coupling between the reference layer, and then adjust the leakage magnetic field of reference layer makes the magnetic tunnel knot have the leakage magnetic field of relative preferred and write current's regulation and control ability, is favorable to the magnetic tunnel knot unit at the magnetism, the promotion of electricity and yield and the miniaturization of device.
Description
Technical Field
The present invention relates to the field of memory technologies, and in particular, to a magnetic tunnel junction structure and a magnetic random access memory thereof.
Background
Magnetic Random Access Memory (MRAM) in a Magnetic Tunnel Junction (MTJ) having Perpendicular Anisotropy (PMA), as a free layer for storing information, there are two magnetization directions in the Perpendicular direction, that is: upward and downward, respectively corresponding to "0" and "1" or "1" and "0" in binary, in practical application, the magnetization direction of the free layer will remain unchanged when reading information or leaving empty; during writing, if a signal different from the existing state is input, the magnetization direction of the free layer will be flipped by 180 degrees in the vertical direction. The ability of the magnetic random access Memory to maintain the magnetization direction of the free layer is called Data Retention or Thermal Stability (Data Retention), and the requirement is different in different application situations, and for a typical Non-volatile Memory (NVM), the Data Retention is required to be able to retain Data for 10 years at 125 ℃, and the Data Retention or Thermal Stability is reduced when external magnetic field flipping, thermal disturbance, current disturbance or multiple read-write operations are performed. In practical applications, the data storage capability of MRAM is strongly related to the stability of Reference Layer (RL), and an antiferromagnetic Anti-ferromagnetic Layer (SyAF) is usually used to pin the Reference Layer. Antiferromagnetic layer (SyAF) typically contains two superlattice ferromagnetic layers with strong perpendicular anisotropy, with a layer of ruthenium to achieve antiferromagnetic coupling of the two superlattice ferromagnetic layers. The design of the reference layer with the addition of the antiferromagnetic layer (SyAF) can reduce the influence of the leakage magnetic field on the free layer, however, in the current structure, it is still difficult to meet the requirement of the subminiature MRAM device on the leakage magnetic field.
Disclosure of Invention
In order to solve the above technical problems, an object of the present application is to provide a magnetic tunnel junction structure and a magnetic random access memory thereof, which implement reference layer pinning, lattice transformation, and reduction/avoidance of "desferrimagnetic coupling".
The purpose of the application and the technical problem to be solved are realized by adopting the following technical scheme.
According to one embodiment of the present invention, a magnetic tunnel junction structure includes, from top to bottom, a Capping Layer (CL), a Free Layer (FL), a Barrier Layer (TBL), a Reference Layer (RL), a lattice Breaking Layer (CBL), an antiferromagnetic Anti-ferromagnetic Layer (SyAF), and a Seed Layer (Seed Layer; SL), wherein the antiferromagnetic Layer includes: a first ferromagnetic superlattice layer formed of a transition metal having a face-centered crystal structure in combination with a ferromagnetic material; the antiferromagnetic coupling layer is arranged on the first ferromagnetic superlattice layer and is formed by a transition metal material capable of forming antiferromagnetic coupling; the vertical anisotropy enhancement layer is arranged on the antiferromagnetic coupling layer and is formed by a transition metal or metal oxide material with high electronegativity and a face-centered crystal structure; a lattice conversion layer disposed on the vertical anisotropy-enhanced layer, and formed of a material having a low electronegativity or a transition metal having a high electronegativity and having a body-centered crystal structure; and a second ferromagnetic layer disposed on the lattice conversion layer and formed of a ferromagnetic material; wherein the lattice conversion layer guides lattice generation of the second ferromagnetic layer, so that part or all of the materials of the second ferromagnetic layer form a close-packed hexagonal structure, and the antiferromagnetic coupling layer antiferromagnetically couples the first ferromagnetic superlattice layer and the second ferromagnetic layer.
The technical problem solved by the application can be further realized by adopting the following technical measures.
In an embodiment of the present application, the material of the first ferromagnetic superlattice layer is selected from [ cobalt/platinum [ ]] n Cobalt or [ cobalt/palladium ]] n A multilayer structure of cobalt, wherein n is more than or equal to 2.
In one embodiment of the present application, the thickness of the single layer structure of cobalt, platinum or palladium is between 0.1 nm and 1.0 nm;
preferably, the thickness of platinum or palladium is between 0.1 nm and 0.4 nm, and the thickness of cobalt is between 0.15 nm and 0.70 nm. While in some embodiments the thickness of the single layer structure of cobalt, platinum or palladium is the same or different.
In an embodiment of the present application, the material of the antiferromagnetic coupling layer is ruthenium, and the thickness of the antiferromagnetic coupling layer is between 0.3 nm and 1.5 nm.
In an embodiment of the present application, the material of the antiferromagnetic coupling layer is iridium, and the thickness of the antiferromagnetic coupling layer is between 0.3 nm and 0.6 nm.
In an embodiment of the present application, the material of the vertical anisotropy enhancing layer is selected from iridium, platinum, palladium, magnesium oxide, aluminum oxide, magnesium aluminum oxide, zinc oxide or magnesium zinc oxide, wherein the thickness of the vertical anisotropy enhancing layer is a,0<a ≦ 0.40 nm. Still further, the material of the vertical anisotropy enhancing layer is selected from iridium, platinum or palladium, which is not thick enough to form a continuous atomic layer.
In an embodiment of the present application, a material of the lattice conversion layer is selected from boron, carbon, magnesium, aluminum, silicon, gallium, scandium, titanium, vanadium, chromium, copper, zinc, germanium, strontium, yttrium, zirconium, niobium, molybdenum, technetium, ruthenium, indium, tin, antimony, hafnium, tantalum, or tungsten, wherein a thickness of the vertical anisotropy enhancing layer is b,0<b ≦ 0.10 nm.
In an embodiment of the present application, the material of the second ferromagnetic layer is Co, and the thickness of Co is c, which is between 0.2 nm and 1.2 nm.
In one embodiment of the present application, an annealing process is performed on the magnetic tunnel junction to cause the reference layer and the free layer to transform from an amorphous structure to a body-centered cubic stacked crystal structure under the templating action of a face-centered cubic crystal structure barrier layer.
Another object of the present invention is to provide a magnetic random access memory device, which includes the magnetic tunnel junction structure, a top electrode disposed above the magnetic tunnel junction structure, and a bottom electrode disposed below the magnetic tunnel junction structure.
According to the method, the lattice conversion layer of the magnetic tunnel junction is used for guiding the lattice of the second ferromagnetic layer to generate a Close-Packed Hexagonal (HCP) structure, so that the lattice mismatch ratio of the second ferromagnetic layer and the reference layer is relatively low, the thickness is greatly reduced, and the magnetic tunnel junction has relatively better leakage magnetic field (H) Stray ) And the regulation and control capability of the write current are beneficial to the improvement of the magnetism, the electricity and the yield of the magnetic random access memory and the further miniaturization of the device.
Drawings
FIG. 1 is a diagram illustrating an exemplary MRAM cell structure;
FIG. 2 is a diagram illustrating a magnetic memory cell structure of an embodiment of the magnetic random access memory of the present application;
FIG. 3 is a schematic diagram of an antiferromagnetic layer structure according to an embodiment of the present application.
Description of the symbols
10, a bottom electrode; 20, magnetic tunnel junction; 30, a top electrode; 21, a seed layer; 22 an antiferromagnetic layer; 23, a lattice partition layer; 24 reference layer; 25, a barrier layer; 26, a free layer; 27: a cover layer; 30, a top electrode; 221 a first ferromagnetic superlattice layer; 222, an antiferromagnetic coupling layer; 223 a perpendicular anisotropy enhancement layer; 224 lattice conversion layer; 225 a second ferromagnetic layer.
Detailed Description
Referring to the drawings, wherein like reference numbers refer to like elements throughout. The following description is based on illustrated embodiments of the application and should not be taken as limiting the application with respect to other embodiments that are not detailed herein.
The following description of the various embodiments refers to the accompanying drawings, which illustrate specific embodiments that can be used to practice the present application. In the present application, directional terms such as "up", "down", "front", "back", "left", "right", "inner", "outer", "side", and the like are merely referring to the directions of the attached drawings. Accordingly, the directional terminology is used for purposes of illustration and understanding, and is in no way limiting.
The terms "first," "second," "third," and the like in the description and claims of this application and in the above-described figures, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It should be understood that the objects so described are interchangeable under appropriate circumstances. Furthermore, the terms "comprising" and "having," as well as variations thereof, such as, for example, are intended to cover non-exclusive inclusions.
The terminology used in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the concepts of the present application. Unless the context clearly dictates otherwise, expressions used in the singular form encompass expressions in the plural form. In the present specification, it will be understood that terms such as "including," "having," and "containing" are intended to specify the presence of the features, integers, steps, acts, or combinations thereof disclosed in the specification, and are not intended to preclude the presence or addition of one or more other features, integers, steps, acts, or combinations thereof. Like reference symbols in the various drawings indicate like elements.
The drawings and description are to be regarded as illustrative in nature, and not as restrictive. In the drawings, elements having similar structures are denoted by the same reference numerals. In addition, the size and thickness of each component shown in the drawings are arbitrarily illustrated for understanding and ease of description, but the present application is not limited thereto.
In the drawings, the range of configurations of devices, systems, components, circuits is exaggerated for clarity, understanding, and ease of description. It will be understood that when an element is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present.
In addition, in the description, unless explicitly described to the contrary, the word "comprise" will be understood to mean that the recited components are included, but not to exclude any other components. Further, in the specification, "on". Immediately above "means above or below the target component, and does not mean that it must be on top based on the direction of gravity.
To further illustrate the technical means and effects of the present invention adopted to achieve the predetermined objects, the following detailed description is provided with reference to the accompanying drawings and specific embodiments for a magnetic tunnel junction structure and a magnetic random access memory thereof according to the present invention, and the specific structures, features and effects thereof are described in detail.
FIG. 1 is a diagram of an exemplary MRAM cell structure. The Magnetic memory cell structure at least includes a Bottom Electrode (BE) 10, a Magnetic Tunnel Junction (MTJ) 20, and a Top Electrode (Top Electrode) 30.
In some embodiments, the bottom electrode 10 is titanium Ti, titanium nitride TiN, tantalum Ta, tantalum nitride TaN, ruthenium Ru, tungsten W, tungsten nitride WN, or combinations thereof; the top electrode 30 is made of Ti, tiN, ta, taN, W, WN or their combination. The magnetic memory cell structure is typically implemented by Physical Vapor Deposition (PVD), and is typically planarized after deposition to achieve surface flatness for the magnetic tunnel junction 20.
In some embodiments, the magnetic tunnel junction 20 comprises a Capping Layer (CL) 27, a Free Layer (FL) 26, a Barrier Layer (TBL) 25, a Reference Layer (RL) 24, a lattice Breaking Layer (CBL) 23, an antiferromagnetic Anti-ferromagnetic Layer (SyAF) 22, and a Seed Layer (Seed Layer, SL) 21.
As shown in FIG. 1, the antiferromagnetic Layer 22 includes a first superlattice ferromagnetic Layer (the 1st Ferragnet super-ferromagnetic Layer,1st FM-SL) 221, an antiferromagnetic coupling Layer 222 and a second ferromagnetic Layer (the 2nd Ferragnet Layer,2nd FML) 224, which are disposed from bottom to top. A first ferromagnetic superlattice layer 221 formed of a transition metal having a face-centered crystal structure in combination with a ferromagnetic material; an antiferromagnetic coupling layer 222 disposed on the first ferromagnetic superlattice layer 221 and formed of a metal material capable of forming antiferromagnetic coupling; a second ferromagnetic layer 225 disposed on the antiferromagnetic coupling layer 222 and formed of a transition metal having a face-centered crystal structure in combination with a ferromagnetic material; wherein the antiferromagnetic coupling layer 222 combines the first ferromagnetic superlattice layer 221 and the second ferromagnetic layer 225 for antiferromagnetic coupling of the ferromagnetic layers, and the magnetic tunnel junction 20 comprises lattice switching and strong ferromagnetic coupling between the antiferromagnetic layer 22 and the reference layer 24.
In the magnetic tunnel junction 20 with perpendicular anisotropy, the free layer 26 functions to store information, possessing two magnetization directions in the perpendicular direction, namely: up and down, corresponding to "0" and "1" or "1" and "0" in the binary, respectively. The magnetization direction of the free layer 26 remains unchanged when information is read or left empty; during writing, if a signal of a different state from that of the prior art is input, the magnetization direction of the free layer 26 is inverted by 180 degrees in the vertical direction. The ability of the free layer 26 of a magnetic random access memory to maintain a constant magnetization direction is called Data Retention or Thermal Stability. The data retention capacity can be calculated using the following formula:
wherein tau is the time when the magnetization vector is unchanged under the condition of thermal disturbance, tau 0 For the trial time (typically 1 ns), E is the energy barrier of the free layer, k B Boltzmann constant, T is operating temperature.
The Thermal Stability factor (Thermal Stability factor) can then be expressed as the following equation:
wherein, K eff Is the effective isotropic energy density of the free layer, V is the volume of the free layer, K V Constant of bulk anisotropy M s Saturation susceptibility of the free layer, demagnetization constant in the direction perpendicular to Nz, t thickness of the free layer, K i Is the interfacial anisotropy constant, CD is the critical dimension of the MRAM (i.e., the diameter of the free layer), A s K is the critical dimension of the free layer 26 switching mode transition from domain switching (i.e., magnetization switching processed by "macro-spin" switching) to reverse domain nucleation/growth (i.e., magnetization switching processed by circulation of a reversed domain and processing of a domain wall) for stiffness-integrated exchange constants. Experiments show that when the thickness of the free layer is thicker, the free layer shows in-plane anisotropy, and when the thickness of the free layer is thinner, the free layer shows vertical anisotropy, K V It is generally negligible and the contribution of demagnetization energy to the perpendicular anisotropy is negative, so the perpendicular anisotropy comes entirely from the interfacial effect (K) i )。
In some embodiments, the thermal stability factor is also affected by the static magnetic Field, particularly the leakage magnetic Field (Stray Field) from the reference layer 24, in combination with the difference in the magnetization direction applied by the static magnetic Field on the free layer 26 to produce an enhancement or reduction effect.
In some embodiments, the first ferromagnetic superlattice layer 221 and the second ferromagnetic layer 225 both have strong perpendicular anisotropy, and the antiferromagnetic coupling layer 222 is mainly ruthenium Ru, which helps achieve antiferromagnetic coupling of the two ferromagnetic layers, which is known in the industry as RKKY (Ruderman-Kittel-Kasuya-Yosida) coupling. Wherein the energy density J per unit area of the antiferromagnetically coupling layer (SyAF) 222 RKKY Comprises the following steps:
J RKKY ＝M S tH RKKY (3)
wherein H RKKY For the RKKY antiferromagnetic coupling field, H RKKY The larger the size, the more stable the synthetic counter magnet (SyAF). In some embodiments, H RKKY There is a strong correlation with the thickness of the antiferromagnetic coupling layer 222, ruthenium Ru, in the range of 0.3 nm to 2.0 nm, with two H' s RKKY The peak was oscillated.
In some embodiments, the reference layer 24 is made to have a body-centered cubic structure after annealing by the lattice partition layer 23, and ferromagnetic coupling of the second ferromagnetic layer 225 having a face-centered cubic structure and the reference layer 24 having a body-centered cubic structure is achieved.
Due to the presence of the antiferromagnetic layer 22, the leakage fields from the reference layer 24 and the synthetic antiferromagnetic layer 22 can be partially cancelled out, quantitatively, by defining the total leakage field from the reference layer 24 and the synthetic antiferromagnetic layer 22 as H Stray ：
Wherein H k eff Is a perpendicular effective anisotropy field, H k eff ＝2(K eff /(μ 0 M s )). Further, defining the magnetization vector perpendicular to the free layer 26 and upward as positive, the leakage magnetic field perpendicular to the free layer 26 upward is positive. Then the thermal stability factor for the magnetization vectors of the free layer 26 and the reference layer 24, in either parallel or antiparallel states, can be expressed as the following equation:
as the volume of the magnetic free layer 26 is reduced, the smaller the spin-polarized current that needs to be injected for a write or switching operation. Critical current of write operation I c0 And thermal stability, and the relationship can express the following formula:
wherein alpha is a damping constant,
η is the spin polarizability, which is the approximate planck constant. Further, the critical current can be expressed as the following expressions when the magnetizations are parallel and antiparallel, respectively:
in this case, the critical current of the magnetic random access memory in the parallel state and the anti-parallel state can be further controlled by controlling a leakage magnetic Field (Stray Field).
In some embodiments, the magnetic tunnel junction 20, which is the core memory cell of the magnetic random access memory, must also be compatible with CMOS processes and must be able to withstand long term annealing at 400 ℃.
As can be seen from the above, although the design of the dual-layer ferromagnetic layer enables the magnetic tunnel junction to have a relatively stronger stray field control capability, it is difficult to control the influence of the stray field on the free layer 26, and the "degaussing magnetic coupling" situation still occurs.
FIG. 2 is a diagram illustrating a magnetic memory cell structure of a magnetic random access memory of the present application, and FIG. 3 is a diagram illustrating an antiferromagnetic layer according to an embodiment of the present application, please refer to FIG. 1 for understanding. The present application provides a magnetic tunnel junction structure, which includes, from top to bottom, a capping layer 27, a free layer 26, a barrier layer 25, a reference layer 24, a lattice partition layer 23, an antiferromagnetic layer 22, and a seed layer 21, wherein the antiferromagnetic layer 22 includes: a first ferromagnetic superlattice layer 221 formed of a transition metal having a face-centered crystal structure in combination with a ferromagnetic material; an antiferromagnetic coupling layer 222 disposed on the first ferromagnetic superlattice layer 221 and formed of a metal material capable of forming antiferromagnetic coupling; a perpendicular anisotropic enhancement Layer (PMA-EL) 223 disposed on the 222 antiferromagnetic coupling Layer and formed of a transition metal material or a metal oxide having a high electronegativity and a face-centered crystal structure; a lattice conversion Layer (CTL) 224 disposed on the vertical anisotropy enhancing Layer 223, formed of a material having a low electronegativity or a transition metal having a high electronegativity and having a body-centered Crystal structure; and a second ferromagnetic layer 225 disposed on the lattice conversion layer 224 and formed of a ferromagnetic material; wherein the lattice conversion layer 224 guides lattice growth of the second ferromagnetic layer 225 such that part or all of the material of the second ferromagnetic layer 225 forms a Hexagonal Close-Packed (HCP) structure, and the antiferromagnetic coupling layer 222 antiferromagnetically couples the first ferromagnetic superlattice layer 221 and the second ferromagnetic layer 225.
In an embodiment of the present application, the material of the first ferromagnetic superlattice layer 221 is selected from [ cobalt Co/platinum Pt ]] n Cobalt Co or [ cobalt Co/palladium Pd] n A multilayer structure of cobalt Co, wherein n is more than or equal to 2.
In one embodiment of the present application, the thickness of the single-layer structure of Co, pt or Pd is 0.1 nm to 1.0 nm; preferably, the thickness of the platinum Pt or the palladium Pd is between 0.1 and 0.4 nm, and the thickness of the cobalt Co is between 0.15 and 0.70 nm. In some embodiments, the thickness of the single layer structure of cobalt Co, platinum Pt or palladium Pd is the same or different.
In an embodiment of the present application, the material of the antiferromagnetic coupling layer 222 is ruthenium Ru, the thickness of the antiferromagnetic coupling layer 222 is between 0.3 nm and 1.5 nm, and the first RKKY peak or the second RKKY peak may be selected.
In an embodiment of the present application, the material of the antiferromagnetic coupling layer 222 is Ir, and the thickness of the antiferromagnetic coupling layer 222 is between 0.3 nm and 0.6 nm, which corresponds to the RKKY first oscillation peak.
In an embodiment of the present application, the material of the vertical anisotropy enhancing layer 223 is selected from iridium Ir, platinum Pt, palladium Pd, magnesium oxide MgO, aluminum oxide Al 2 O 3 Magnesium aluminum oxide MgAlO, zinc oxide ZnO or magnesium zinc beautifier MgZnO, wherein the thickness of the vertical anisotropy enhancement layer 223 is a,0<a is less than or equal to 0.40 nanometer. Further, the perpendicular anisotropyThe material of the enhancement layer is selected from iridium, platinum or palladium and is not thick enough to form a continuous atomic layer.
In an embodiment of the present application, the material of the lattice conversion layer 224 is selected from boron B, carbon C, magnesium Mg, aluminum Al, silicon Si, gallium Ga, scandium Sc, titanium Ti, vanadium V, chromium Cr, copper Cu, zinc Zn, germanium Ge, strontium Sr, yttrium Y, zirconium Zr, niobium Nb, molybdenum Mo, technetium Tc, ruthenium Ru, indium In, tin Sn, antimony Sb, hafnium, tantalum Ta, or tungsten W, wherein the thickness of the vertical anisotropy enhancing layer 223 is B,0<b ≦ 0.10 nm.
In an embodiment of the present application, the second ferromagnetic layer 225 is cobalt and has a thickness of 0.2 nm to 1.2 nm.
Among them, the first ferromagnetic superlattice layer 221, the antiferromagnetic coupling layer 222, and the perpendicular anisotropy enhancing layer 223 have a face-centered cubic FCC (111) structure. The cobalt Co of the second ferromagnetic layer 225 generally has an HCP FCC close-packed structure under the induction of the lattice conversion layer 224. In this case, the lattice mismatch ratio of the second ferromagnetic layer 225 and the reference layer 24 is lower.
In an embodiment of the present application, the magnetization vector of the reference layer 24 and the magnetization vector of the second ferromagnetic layer 225 are oriented in the same direction after initialization by a magnetic field.
In an embodiment of the present application, the saturation magnetic moment of the first ferromagnetic superlattice layer 221 in the vertical direction is M S1 S 1 t 1 The second ferromagnetic layer 225 has a saturation magnetic moment M in the vertical direction S2 S 2 t 2 The reference layer 24 has a saturation magnetic moment M in the vertical direction S3 S 3 t 3 By varying the saturation magnetic susceptibility (M) of each layer of material S ) And thickness (t) to regulate the total leakage magnetic field (H) applied over the free layer 26 Stray ) Therefore, the thermal stability factor and the critical current in the parallel and anti-parallel states of the magnetization vectors can be further regulated and controlled. To obtain better ability to read, write and store information.
In some embodiments, the saturation magnetic moment (α) of the first ferromagnetic superlattice layer 221, the second ferromagnetic layer 225, and the reference layer 24 satisfy the following relationship:
in some embodiments, α ≦ 100%, and more preferably α ≦ 80%, in which case thinning of the second ferromagnetic superlattice layer 225 and the reference layer 24 becomes exceptionally important. In the present application, however, the thickness of the Ir, pt or Pd is selected to be less than one atomic layer for the vertical anisotropy enhancement layer 223, in which case HRKKY is not significantly damaged, and if Ir is selected, HRKKY is also enhanced. As such, the RKKY antiferromagnetic coupling of the first magnetic superlattice layer 221 and the second magnetic layer 225 is not affected by the addition of iridium Ir, platinum Pt, or palladium Pd. In addition, the design of the perpendicular anisotropy enhancing layer 223 and the lattice transformation layer 224, besides providing an additional source of interfacial anisotropy, further guides the second ferromagnetic layer 225 to form a single HCP-structure Co with a significantly reduced thickness, which is also helpful for the leakage magnetic field (H) Stray ) And the regulation and the optimization of the write current are very favorable for the improvement of the magnetism, the electricity and the yield of the magnetic random access memory and the further miniaturization of the device.
In an embodiment of the present application, the material of the seed layer 21 of the magnetic tunnel junction 20 is one or a combination of Ti, tiN, ta, taN, W, WN, ru, pt, cr, crCo, ni, crNi, coB, feB, coFeB, etc. selected from Ti, tiN, ta, taN, W, WN, ru, pt, cr, crCo, ni, coFeB, and CoFeB. In some embodiments, the seed layer 21 may be selected from one of CoFeB/Ta/Pt, ta/Ru, ta/Pt/Ru, coFeB/Ta/Pt/Ru, and Ru. In some embodiments, the seed Layer 21 may incorporate a Buffer Layer (BL) structure of amorphous structure.
In some embodiments, the reference layer 24 of the magnetic tunnel junction 20 has a magnetic polarization invariance under ferromagnetic coupling from the antiferromagnetic layer 22. The material of the reference layer 24 is one or a combination of cobalt Co, iron Fe, nickel Ni, cobalt ferrite CoFe, cobalt boride CoB, iron boride FeB, cobalt iron carbon CoFeC, cobalt iron boron CoFeB and cobalt iron boron carbon CoFeBC, and the thickness of the reference layer 24 is between 0.5 nanometers and 1.5 nanometers.
In some embodiments, since the antiferromagnetic layer 22 has a Face Centered Cubic (FCC) crystal structure and the reference layer 24 has a Body Centered Cubic (BCC) crystal structure, and the lattices are not matched, in order to realize the transition and ferromagnetic coupling from the antiferromagnetic layer 22 to the reference layer 24, a lattice-partitioning layer 23 is typically added between two layers of materials, the material of the lattice-partitioning layer 23 is one selected from Ta, W, mo, hf, nb, or a combination thereof, and the thickness of the lattice-partitioning layer 23 is between 0.1 nm and 0.5 nm.
In some embodiments, the barrier layer 25 of the magnetic tunnel junction 20 is formed of a non-magnetic metal oxide having a thickness between 0.6 and 1.5 nanometers, including magnesium oxide MgO, magnesium zinc oxide MgZnO, zinc oxide ZnO, aluminum oxide Al 2 O 3 Magnesium nitride MgN, magnesium boron oxide Mg 3 B 2 O 6 Or magnesium aluminum oxide Mg 3 Al 2 O 6 . Preferably, magnesium oxide MgO may be used.
In an embodiment of the present application, the free layer 26 of the magnetic tunnel junction 20 has a variable magnetic polarization property, and the material of the free layer 26 is a single-layer structure selected from cobalt boride CoB, iron boride FeB, cobalt iron boron CoFeB, or a double-layer structure of cobalt boride CoFe/cobalt iron boron CoFeB, iron Fe/cobalt iron boron CoFeB, or a three-layer structure of iron boron FeB/(tungsten W, molybdenum Mo, vanadium V, niobium Nb, chromium Cr, hafnium Hf, titanium Ti, zirconium Zr, tantalum Ta, scandium Sc, yttrium Y, zinc Zn, ruthenium Ru, osmium Os, rhodium Rh, iridium, palladium Pd, and/or platinum Pt)/cobalt iron boron CoFeB, cobalt iron boron (CoFeB/(tungsten W, molybdenum Mo, vanadium V, niobium Nb, chromium Cr, hafnium Hf, titanium Ti, zirconium Zr, tantalum, scandium, yttrium Y, zinc Zn, ruthenium Ru, osmium Os, rhodium, iridium, palladium Pd, and/or platinum Pt)/iron boron, or a four-layer structure of iron/cobalt-iron-boron/(tungsten W, molybdenum Mo, vanadium V, niobium Nb, chromium Cr, hafnium Hf, titanium Ti, zirconium Zr, tantalum Ta, scandium Sc, yttrium Y, zinc Zn, ruthenium Ru, osmium Os, rhodium Rh, iridium Ir, palladium Pd and/or platinum Pt)/cobalt-iron-boron, cobalt/cobalt-iron-boron iron/(tungsten W, molybdenum Mo, vanadium V, niobium Nb, chromium Cr, hafnium Hf, titanium Ti, zirconium Zr, tantalum Ta, scandium Sc, yttrium Y, zinc Zn, ruthenium Ru, osmium, rhodium Rh, iridium Ir, palladium Pd and/or platinum Pt)/cobalt-iron-boron; the thickness of the free layer 26 is between 1.2 nanometers and 3.0 nanometers.
In an embodiment of the present application, the material of the capping layer 27 of the magnetic tunnel junction 20 is a double-layer structure selected from (one of Mg, mgO, mgZnO, mgBO, mgAlO)/(one of W, mo, mg, nb, ru, hf, V, cr, or Pt), or a triple-layer structure of MgO/(one of W, mo, or Hf)/Ru, or a four-layer structure of MgO/Pt/(one of W, mo, or Hf)/Ru. In some embodiments, the selection of magnesium oxide (MgO) can provide a source of additional interfacial anisotropy for the Free Layer (FL) 26, thereby increasing thermal stability.
In one embodiment of the present application, an annealing process is performed on the magnetic tunnel junction 20 at a temperature not less than 350 ℃ to transform the reference layer 24 and the free layer 26 from an amorphous structure to a body-centered cubic stacked BCC (001) crystal structure under the template action of the sodium chloride (NaCl) type FCC (001) structure barrier layer 25.
Referring to fig. 2 to 3, in an embodiment of the present application, a magnetic random access memory includes a plurality of memory cells, each of the memory cells including one of the magnetic tunnel junctions 20 structure, a top electrode 30 disposed above the magnetic tunnel junction 20 structure, and a bottom electrode 10 disposed below the magnetic tunnel junction 20 structure.
In one embodiment of the present application, the bottom electrode 10, the magnetic tunnel junction 20, and the top electrode 30 are all formed by a physical vapor deposition process.
According to the method, the lattice conversion layer of the magnetic tunnel junction is used for guiding the lattice of the second ferromagnetic layer to generate a Close-Packed Hexagonal (HCP) structure, so that the lattice mismatch ratio of the second ferromagnetic layer and the reference layer is relatively low, the thickness is greatly reduced, and the magnetic tunnel junction has relatively better leakage magnetic field (H) Stray ) And the regulation and control capability of the write current are beneficial to the improvement of the magnetism, the electricity and the yield of the magnetic random access memory and the further miniaturization of the device.
The terms "in one embodiment of the present application" and "in various embodiments" are used repeatedly. This phrase generally does not refer to the same embodiment; it may also refer to the same embodiment. The terms "comprising," "having," and "including" are synonymous, unless the context dictates otherwise.
Although the present application has been described with reference to specific embodiments, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the application as defined by the appended claims.
Claims (10)
1. A magnetic tunnel junction structure is arranged in a magnetic random access memory unit, the magnetic tunnel junction structure comprises a covering layer, a free layer, a barrier layer, a reference layer, a crystal lattice partition layer, an antiferromagnetic layer and a seed layer from top to bottom, and the antiferromagnetic layer is characterized in that the antiferromagnetic layer comprises a first layer and a second layer which are respectively arranged from bottom to top:
a first ferromagnetic superlattice layer formed of a transition metal having a face-centered crystal structure in combination with a ferromagnetic material;
the antiferromagnetic coupling layer is arranged on the first ferromagnetic superlattice layer and is formed by a transition metal material capable of forming antiferromagnetic coupling;
a perpendicular anisotropy enhancement layer disposed on the antiferromagnetic coupling layer and formed of a transition metal material or a metal oxide having a high electronegativity and a face-centered crystal structure;
a lattice conversion layer disposed on the vertical anisotropy-enhanced layer, and formed of a material having a low electronegativity or a transition metal having a high electronegativity and having a body-centered crystal structure; and
a second ferromagnetic layer disposed on the lattice conversion layer and formed of a ferromagnetic material;
wherein the lattice conversion layer guides lattice generation of the second ferromagnetic layer, so that part or all of the materials of the second ferromagnetic layer form a close-packed hexagonal structure, and the antiferromagnetic coupling layer combines the first ferromagnetic superlattice layer and the second ferromagnetic layer for antiferromagnetic coupling.
2. The magnetic tunnel junction structure of claim 1 wherein the first ferromagnetic superlattice layer is selected from [ cobalt ∑ or ∑ o
A multilayer structure of platinum ncobalt or [ cobalt/palladium ] ncobalt, wherein n is an integer equal to or greater than 2.
3. The magnetic tunnel junction structure of claim 2 wherein the single layer structure of cobalt, platinum or palladium has a thickness of between 0.1 nm and 1.0 nm.
4. The magnetic tunnel junction structure of claim 2 wherein the thickness of the single layer structure of cobalt, platinum or palladium is the same or different.
5. The magnetic tunnel junction structure of claim 1 wherein the antiferromagnetic coupling layer is ruthenium and the antiferromagnetic coupling layer has a thickness between 0.3 nm and 1.5 nm.
6. The magnetic tunnel junction structure of claim 1 wherein the antiferromagnetic coupling layer is iridium and has a thickness of between 0.3 nm and 0.6 nm.
7. The magnetic tunnel junction structure of claim 1, wherein the material of the vertical anisotropy enhancing layer is selected from iridium, platinum, palladium, magnesium oxide, aluminum oxide, magnesium aluminum oxide, zinc oxide, or magnesium zinc oxide, wherein the thickness of the vertical anisotropy enhancing layer is a,0<a ≤ 0.40 nm.
8. The magnetic tunnel junction structure of claim 1 wherein the material of the lattice conversion layer is selected from the group consisting of boron, carbon, magnesium, aluminum, silicon, gallium, scandium, titanium, vanadium, chromium, copper, zinc, germanium, strontium, yttrium, zirconium, niobium, molybdenum, technetium, ruthenium, indium, tin, antimony, hafnium, tantalum, and tungsten, wherein the thickness of the vertical anisotropy enhancement layer is b,0<b ≦ 0.10 nm.
9. The magnetic tunnel junction structure of claim 1 wherein the second ferromagnetic layer is cobalt and has a thickness of between 0.2 nm and 1.2 nm.
10. A magnetic random access memory comprising the magnetic tunnel junction structure of any of claims 1-9, a top electrode disposed above the magnetic tunnel junction structure, and a bottom electrode disposed below the magnetic tunnel junction structure.
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