CN112540239B - Multi-structure coupling-based miniature electric field sensor and preparation method thereof - Google Patents
Multi-structure coupling-based miniature electric field sensor and preparation method thereof Download PDFInfo
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- CN112540239B CN112540239B CN201910896672.8A CN201910896672A CN112540239B CN 112540239 B CN112540239 B CN 112540239B CN 201910896672 A CN201910896672 A CN 201910896672A CN 112540239 B CN112540239 B CN 112540239B
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Abstract
A micro electric field sensor based on multi-structure coupling, comprising: the micro electric field sensor comprises a first resonator, a second resonator, a third resonator, an electrode unit and a fixing unit; wherein: the first resonator and the third resonator are respectively arranged at two sides of the second resonator, and the first resonator and the third resonator are connected with a reference zero potential or a certain reference potential; the electrode unit comprises an excitation electrode, a tuning electrode, a vibration detection electrode and an electric field induction electrode which are respectively arranged on the first resonator, the second resonator, the third resonator and the fixing unit, and is used for measuring the electric field intensity of the position where the micro electric field sensor is located through the field intensity change between the electrode plates. The electric field sensor has the advantages of high sensitivity, simple structure, adjustable dynamic range and sensitivity and the like.
Description
Technical Field
The invention relates to the field of sensors in the electronic industry, in particular to a multi-structure coupling-based micro electric field sensor and a preparation method thereof.
Background
The electric field sensor is widely applied to the fields of aerospace, meteorological detection, electric power systems, industrial production, environmental monitoring and the like, and plays an important role in safety guarantee and scientific research. For different application fields, the properties of the electric field to be measured (e.g. the frequency, intensity, direction, duration, etc. of the electric field to be measured) and the working environment of the sensor (e.g. the temperature and physical state of the environment in which the sensor is located) are different, and therefore the types of electric field sensors required for measurement are also different. Currently, a number of electric field measurement principles and sensor processing techniques have been used in the research of electric field sensors. In the last two decades, with the rapid development of Micro-Electro-Mechanical systems (MEMS), Micro electric field sensors have become the research focus of electric field sensors due to their advantages of small size, low cost, mass production, low power consumption, etc.
Some special application fields, such as target detection, low static electricity sensitive measurement, etc., require the electric field sensor to have extremely high sensitivity, and the resolution needs to reach 1V/m or even higher. However, the miniature electric field sensor has the problems of weak signal and low resolution due to small device size, and at present, the electrostatic field resolution of the miniature electric field sensor is generally lower than 10V/m, so that the requirements of the special fields are difficult to meet.
Disclosure of Invention
In view of the above, the present invention provides a micro electric field sensor based on multi-structure coupling and a method for manufacturing the same, so as to at least partially solve at least one of the above technical problems.
In order to achieve the above object, as one aspect of the present invention, there is provided a micro electric field sensor based on multi-structure coupling, the micro electric field sensor including a first resonator, a second resonator, a third resonator, an electrode unit, and a fixing unit; wherein:
the first resonator and the third resonator are respectively arranged at two sides of the second resonator, and the first resonator and the third resonator are connected with a reference zero potential or a certain reference potential;
the electrode unit comprises an excitation electrode, a tuning electrode, a vibration detection electrode and an electric field induction electrode which are respectively arranged on the first resonator, the second resonator, the third resonator and the fixing unit, and is used for measuring the electric field intensity of the position where the micro electric field sensor is located through the field intensity change between the electrode plates;
the fixing unit comprises a fixing anchor point and a substrate, and is used for fixing one end of the first resonator and one end of the third resonator and two ends of the second resonator on the substrate through the fixing anchor point respectively.
As another aspect of the present invention, there is provided a method for preparing a micro electric field sensor based on multi-structure coupling, comprising the following steps:
coating photoresist on the front side of the SOI wafer, and patterning the photoresist through a mask;
etching the top layer silicon, and defining the structural shapes of the first resonator, the second resonator, the third resonator, the electrode unit and the fixed anchor point;
removing the photoresist and cutting;
removing oxide layers below the first resonator, the second resonator, the third resonator and the electrode unit by using an HF solution or an HF gas, releasing the structure, and reserving the oxide layers below the fixed anchor points to enable the oxide layers to be fixed on the substrate silicon;
preferably, the oxide layer needs to be preserved during the step of dicing so as not to damage the fragile resonator structure during dicing.
Based on the technical scheme, compared with the prior art, the micro electric field sensor disclosed by the invention at least has one of the following beneficial effects:
1. the sensor is a symmetrical structure formed by connecting two or more resonators in a weak coupling manner, and the vibration mode of the structure has extremely high sensitivity to tiny structural disturbance;
2. the resonators in the sensor are connected by adopting capacitive coupling or mechanical coupling, and the coupling strength of the capacitive coupling can be automatically adjusted; for mechanical coupling, the structure has higher stability;
3. the tuning electrode in the sensor can effectively generate disturbance to the rigidity of the resonator;
4. the vibration detection electrode of the sensor is arranged on the inner side of the resonator, so that the plane utilization rate is improved, and the measurement of the resonant frequency and the amplitude of the resonator is realized;
5. the invention designs a multi-structure coupling micro electric field sensor to realize the detection of an electric field, and aims to improve the sensitivity and the resolution of the electric field sensor.
Drawings
FIG. 1 is a schematic structural diagram of a multi-structure coupling-based micro electric field sensor of the present invention, wherein FIGS. 1(a) and 1(b) are a schematic plan view and a corresponding schematic three-dimensional structure of the sensor structure respectively when an excitation electrode is on the outer side of a resonator, and FIGS. 1(c) and 1(d) are a schematic plan view and a corresponding schematic three-dimensional structure of the sensor structure respectively when the excitation electrode is on the inner side of the resonator;
FIG. 2 is a cross-sectional view of the sensor structure, wherein FIG. 2(a) is a schematic view of an electric field sensing electrode disposed on an axial direction of a support beam in one resonator, and FIG. 2(b) is a schematic view of the electric field sensing electrode disposed on an upper surface of a cap; FIG. 2(c) is a schematic view when placed on the lower surface of the cap;
fig. 3(a) is a schematic view when both ends of a resonator support beam are fixed on a substrate by fixing anchors, and fig. 3(b) is a schematic view when one end of the resonator support beam is fixed on the substrate by fixing anchors and the other end is connected to a support beam perpendicular to each other;
fig. 4(a) and 4(b) are schematic views of the flat excitation electrodes disposed outside and inside the resonator, respectively, and fig. 4(c) and 4(d) are schematic views of the comb-teeth excitation electrodes disposed outside and inside the resonator, respectively;
FIG. 5(a) is a schematic diagram of a flat plate detection electrode, and FIG. 5(b) is a schematic diagram of a comb detection electrode;
fig. 6 is a schematic diagram of coupling connections between resonators, in which fig. 6(a) is a schematic diagram of electrostatic plate capacitive coupling, fig. 6(b) is a schematic diagram of electrostatic comb capacitive coupling, and fig. 6(c) is a schematic diagram of mechanical beam coupling;
FIG. 7 is a schematic diagram of an alternative resonator structure, including a structure made up of a support beam and a mass supported by the support beam as shown in FIGS. 7(a) and 7(b), a tuning fork structure as shown in FIGS. 7(c) and 7(d), and a ring beam structure as shown in FIG. 7 (e);
fig. 8 is a schematic SOI process flow diagram of the present invention.
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
The working principle of the multi-structure coupling-based micro electric field sensor is as follows: the electric field induction electrode generates induction charges under the action of a measured electric field, and rigidity disturbance is generated on one resonator directly or through a tuning electrode, so that the overall vibration mode is changed, the amplitude change condition of the resonator is analyzed through the vibration detection electrode, and the purpose of detecting the electric field is achieved.
Specifically, the micro electric field sensor based on multi-structure coupling comprises a first resonator, a second resonator, a third resonator, an electrode unit and a fixing unit; wherein:
the first resonator and the third resonator are respectively arranged at two sides of the second resonator, and the first resonator and the third resonator are connected with a reference zero potential or a certain reference potential;
the electrode unit comprises an excitation electrode, a tuning electrode, a vibration detection electrode and an electric field induction electrode which are respectively arranged on the first resonator, the second resonator, the third resonator and the fixing unit, and is used for measuring the electric field intensity of the position where the micro electric field sensor is located through the field intensity change between the electrode plates;
the fixing unit comprises a fixing anchor point and a substrate, and is used for fixing one end of the first resonator and one end of the third resonator and two ends of the second resonator on the substrate through the fixing anchor point respectively.
The first resonator, the second resonator, the third resonator, the excitation electrode, the tuning electrode and the vibration detection electrode are all fixed on the substrate through fixed anchor points;
a sealing cap is arranged on the upper surface of the substrate;
preferably, the micro electric field sensor has a symmetrical structure in which two or more resonators are sequentially arranged.
The capacitive coupling between the adjacent resonators comprises electrostatic flat capacitive coupling and/or electrostatic comb capacitive coupling, the movable polar plates which are opposite to each other between the adjacent resonators or the movable comb teeth which are staggered form coupling capacitors, and the movable polar plates or the movable comb teeth are respectively connected to the two adjacent resonators;
preferably, adjacent resonators are coupled through a mechanical beam, that is, adjacent resonators are connected together and supported through the mechanical beam, and the mechanical beam is a flexible beam structure of a straight beam, a folded beam, a double folded beam or a snake-shaped beam.
The excitation electrodes comprise flat excitation electrodes and/or comb tooth excitation electrodes, are opposite to the movable flat electrodes fixed on the resonators or are mutually staggered with the movable comb tooth electrodes fixed on the resonators and are arranged on the outer sides or the inner sides of the first resonators and the third resonators;
preferably, a support beam is further arranged in the resonator;
preferably, the tuning electrodes are placed on both sides of the support beam in the resonator, or in the axial direction of the support beam in the resonator, or both, and are connected to the field-inducing electrodes or voltage sources by means of wires or conductor structures.
The vibration detection electrode comprises a flat plate detection electrode and/or a comb tooth detection electrode, is opposite to the movable flat plate electrode fixed on the resonator, or is mutually staggered with the movable comb tooth electrode fixed on the resonator, and is arranged on the inner sides of the first resonator and the third resonator;
preferably, the electric field induction electrode is arranged in the axial direction of the support beam in the first resonator or the third resonator, or on the upper surface of the sealing cap; or the lower bottom surface of the sealing cap is arranged right above the first resonator or the third resonator;
preferably, the shielding electrode is disposed on a side surface of the vibration detection electrode fixing portion, or on a lower bottom surface of the sealing cap; the shielding electrode is connected with a reference zero potential and used for shielding interference.
Wherein, two ends of the support beam in the resonator can be fixed on the substrate through fixed anchor points; or one end of the supporting beam is fixed on the substrate through the fixed anchor point, the other end of the supporting beam is connected with a supporting beam which is vertical to each other, the supporting beam is constrained to move only along the axial direction, and two ends of the supporting beam in the vertical direction are fixed on the substrate through the fixed anchor points;
preferably, the support beams are arranged in multiple groups and are elastic beam structures of straight beams, folded beams, double folded beams or snake-shaped beams.
The resonator is a support beam and an I-shaped mass block, a rectangular mass block or mass blocks in other shapes supported by the support beam;
preferably, the resonator is in the shape of a tuning fork or a ring beam.
Wherein, the materials of the first resonator, the second resonator, the third resonator, the exciting electrode, the tuning electrode, the fixed anchor point, the vibration detection electrode, the shielding electrode, the substrate and the sealing cap are selected from monocrystalline silicon, polycrystalline silicon, metal, polymer or composite materials; the material of the electric field induction electrode is selected from monocrystalline silicon, polycrystalline silicon, metal or composite materials.
The sensor can be realized by adopting a micro-nano processing technology, a Micro Electro Mechanical System (MEMS) technology, an SOI MEMS, a bulk silicon process, a surface process or a precision machining technology.
A method for preparing the miniature electric field sensor, which comprises the following steps:
coating photoresist on the front side of the SOI wafer, and patterning the photoresist through a mask;
etching the top layer silicon, and defining the structural shapes of the first resonator, the second resonator, the third resonator, the electrode unit and the fixed anchor point;
removing the photoresist and cutting;
removing oxide layers below the first resonator, the second resonator, the third resonator and the electrode unit by using an HF solution or an HF gas, releasing the structure, and reserving the oxide layers below the fixed anchor points to enable the oxide layers to be fixed on the substrate silicon;
preferably, the oxide layer needs to be preserved during the step of dicing so as not to damage the fragile resonator structure during dicing.
The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention and should not be construed as limiting the invention.
FIG. 1 is a schematic structural diagram of one embodiment of a multi-structure coupling based micro electric field sensor of the present invention, which includes three resonator structures and two sets of excitation electrodes. FIGS. 1(a) and 1(b) show a schematic plan view and a corresponding schematic three-dimensional structure of a sensor structure with excitation electrodes on the outside of the resonator; fig. 1(c) and 1(d) show schematic plan views and corresponding schematic three-dimensional structures of sensor structures with excitation electrodes inside the resonator.
In this embodiment, the adjacent resonators form an electrostatic plate capacitor by the facing movable electrode plates, and are coupled to form a symmetrical structure, as shown in fig. 6(a), the two resonators on the outer side are connected to a reference zero potential or a certain reference potential.
In this embodiment, the structure of the outer resonator adopts a support beam and an i-shaped mass block supported by the support beam, and the structure of the middle resonator adopts a support beam and a rectangular mass block supported by the support beam, which are simplified as shown in fig. 7(a) and 7 (b); two ends of the support beam of the middle resonator can be fixed on the substrate through fixed anchor points; one end of the supporting beam of the outer resonator is fixed on the substrate through a fixed anchor point, the other end of the supporting beam is connected with a supporting beam which is vertical to each other, and two ends of the supporting beam in the vertical direction are fixed on the substrate through fixed anchor points, and a simplified diagram is shown in fig. 3 (b); all the support beams are straight beams.
In this embodiment, the resonator is driven by comb-tooth excitation electrodes, which are fixed on the substrate via fixed anchors, are disposed outside or inside the resonator, and are interleaved with movable comb-tooth electrodes fixed on the resonator, as shown in fig. 4(c) and 4 (d).
In this embodiment, the tuning electrodes are fixed on the substrate by fixing anchors, disposed on both sides of the resonator support beam, and in the axial direction of the resonator support beam.
In this embodiment, the comb-tooth vibration detection electrode is used, and is interlaced with the movable comb-tooth electrode fixed on the resonators, fixed on the substrate by the fixed anchor point, and placed inside the two resonators on the outer side, and the simplified diagram is shown in fig. 5 (b); the shielding electrode is arranged on the side surface of the fixed part of the vibration detection electrode and fixed on the substrate through a fixed anchor point, and the shielding electrode is referenced to zero potential.
In this embodiment, the electric field induction electrode is made of a metal material, and has three placing modes: an electric field induction electrode is arranged in the axial direction of a supporting beam in a resonator on the outer side, is fixed on the substrate silicon through a fixed anchor point, is separated from the substrate by a silicon dioxide insulating layer, and a metal shielding electrode is arranged on the lower bottom surface of a sealing cap and is connected with a reference zero potential, as shown in figure 2 (a);
two electric field induction electrodes are arranged on the upper surface of the sealing cap, are separated from the sealing cap by a silicon dioxide insulating layer and are connected with a plurality of tuning electrodes through leads, and a metal shielding electrode is arranged on the lower bottom surface of the sealing cap and is connected with a reference zero potential, as shown in figure 2 (b);
three electric field induction electrodes are arranged on the lower bottom surface of the sealing cap, a resonator is arranged right above the outer side of the sealing cap, a metal shielding electrode is arranged on the lower bottom surface of the sealing cap, and silicon dioxide insulating layers are arranged right above the other resonators and separated from the sealing cap, and the metal shielding electrodes are connected with reference zero potential, as shown in fig. 2 (c).
In the embodiment, the resonator, the excitation electrode, the tuning electrode, the support beam and the vibration detection electrode are fixed on the substrate through the fixed anchor points; the cap is fixed to the upper surface of the substrate.
In this embodiment, the SOI process flow is shown in fig. 8, and the preparation method includes the following steps: (1) spin-coating a photoresist on the front side of the SOI wafer, patterning the photoresist through a mask, as shown in fig. 8 (a); (2) performing deep reactive ion etching to etch the device layer to define the structure of the device, as shown in fig. 8 (b); (3) removing the photoresist and then dicing, leaving the oxide layer in this step so that the fragile resonator structure is not damaged during dicing, as shown in fig. 8 (c); (4) the edges of the resonator structure, including the cantilever beam and the proof mass, are released using a HF solution wet etch, as shown in fig. 8 (d).
In addition to this embodiment, preferably, the sensor is not limited to be composed of three resonators coupled and connected, and may be composed of two or more resonators coupled and connected and arranged in sequence to form a symmetrical structure, the resonators are fixed on the substrate by fixing anchors, and the two outermost resonators are connected to a reference zero potential or a certain reference potential.
Preferably, the adjacent resonators can be connected by electrostatic plate capacitive coupling, and the movable electrode plates connected between the adjacent resonators are opposite to form a coupling capacitor, as shown in fig. 6 (a); electrostatic comb capacitance coupling connection can be adopted, and movable combs connected between adjacent resonators are staggered with each other to form coupling capacitance, as shown in fig. 6 (b); the mechanical beams can be coupled and connected, and the support beams of adjacent resonators are connected together by the mechanical beams, as shown in fig. 6(c), and the mechanical beams can be elastic beam structures of straight beams, folded beams, double folded beams or snake-shaped beams.
Preferably, the resonator structure may be a structure formed by a support beam and a mass supported by the support beam, as shown in fig. 7(a) and 7(b), a tuning fork structure, as shown in fig. 7(c) and 7(d), or a ring beam structure, as shown in fig. 7 (e).
It should be noted that, if there is no tuning electrode or electric field induction electrode in the axial direction of the support beam in the resonator, both ends of the support beam may be fixed on the substrate by fixing anchors, as shown in fig. 3 (a); if there is a tuning electrode or an electric field induction electrode in the axial direction of one end of the support beam, the end is connected to a support beam perpendicular to each other, and constrained to move only in the axial direction, both ends of the support beam in the perpendicular direction are fixed to the substrate by fixing anchors, and the other end of the support beam is fixed to the substrate by fixing anchors, as shown in fig. 3 (b).
Preferably, the resonators can be driven by the plate excitation electrode, opposite to the movable plate electrode fixed on the resonators, fixed on the substrate by the fixed anchor points, and placed outside or inside the two outermost resonators, as shown in fig. 4(a) and 4 (b); driven by comb-tooth excitation electrodes, interlaced with movable comb-tooth electrodes fixed to the resonators, fixed to the substrate via fixed anchors, and placed outside or inside the two outermost resonators, as shown in fig. 4(c) and 4 (d).
Preferably, the tuning electrodes are fixed on the substrate through fixing anchor points, can be arranged on two sides of the resonator support beams, can be arranged in the axial direction of the resonator support beams, can be simultaneously arranged at the positions, and can be connected with the electric field induction electrodes or the voltage source through conducting wires.
Preferably, the support beams are arranged into a plurality of groups and are elastic beam structures of straight beams, folded beams, double folded beams or snake-shaped beams.
Preferably, the vibration detection electrode may be a flat detection electrode, which is opposite to the movable flat electrode fixed on the resonator, fixed on the substrate by a fixed anchor point, and disposed on the inner side of the resonator, as shown in fig. 5 (a); the comb-tooth detection electrode may be used, which is interdigitated with the movable comb-tooth electrode fixed to the resonator, fixed to the substrate via a fixed anchor, and placed inside the resonator, as shown in fig. 5 (b).
Preferably, the electric field induction electrode can be arranged in the axial direction of the support beam in a resonator, is fixed on the substrate silicon through a fixed anchor point and is separated from the substrate by an insulating layer, and the shielding electrode is arranged on the lower bottom surface of the sealing cap; or the shielding electrode is arranged on the upper surface of the sealing cap, is separated from the sealing cap by an insulating layer and is connected with the plurality of tuning electrodes through leads, and the shielding electrode is arranged on the lower bottom surface of the sealing cap; or the shielding electrode is arranged on the lower bottom surface of the sealing cap and right above one resonator, the shielding electrode is arranged on the lower bottom surface of the sealing cap and right above the other resonators, and the shielding electrode and the sealing cap are separated by an insulating layer.
Preferably, the shielding electrode is disposed on a side surface of the vibration detection electrode fixing portion, fixed on the substrate by the fixing anchor, and disposed on a lower bottom surface of the cap, and connected to a reference zero potential.
Preferably, the substrate is insulated from the resonator, the excitation electrode, the tuning electrode, the vibration detection electrode, the electric field induction electrode, and the shielding electrode.
Preferably, the resonator, the excitation electrode, the tuning electrode, the fixed anchor point, the support beam, the vibration detection electrode, the shielding electrode, the substrate and the sealing cap are made of monocrystalline silicon, polycrystalline silicon, metal, polymer or composite material; the material of the electric field induction electrode is monocrystalline silicon, polycrystalline silicon, metal or composite material.
Preferably, the sensor can be realized by micro-nano processing technology, micro-electro-mechanical system (MEMS) technology, SOI MEMS, bulk silicon process, surface process or precision machining technology.
It should be noted that the claims, drawings and descriptions of the patent use the same reference numbers for similar or identical elements, and those elements not shown or described in the drawings and those of ordinary skill in the art should also be understood to be equivalent. The above-described embodiments are not intended to limit the present invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (16)
1. A micro electric field sensor based on multi-structure coupling is characterized by comprising a first resonator, a second resonator, a third resonator, an electrode unit and a fixing unit; wherein:
the first resonator and the third resonator are respectively arranged at two sides of the second resonator, and the first resonator and the third resonator are connected with a reference zero potential or a certain reference potential;
the electrode unit comprises an excitation electrode, a tuning electrode, a vibration detection electrode and an electric field induction electrode which are respectively arranged on the first resonator, the second resonator, the third resonator and the fixing unit, and is used for measuring the electric field intensity of the position where the micro electric field sensor is located through the field intensity change between the electrode plates;
the fixing unit comprises a fixing anchor point and a substrate, and is used for fixing one end of the first resonator and one end of the third resonator and two ends of the second resonator on the substrate through the fixing anchor point respectively;
the resonator is also internally provided with a supporting beam, the upper surface of the substrate is also provided with a sealing cap, and the electric field induction electrode is arranged in the axial direction of the supporting beam in the first resonator or the third resonator or on the upper surface of the sealing cap; or the lower bottom surface of the sealing cap is arranged right above the first resonator or the third resonator.
2. The micro electric field sensor according to claim 1, wherein the first resonator, the second resonator, the third resonator, the excitation electrode, the tuning electrode, and the vibration detection electrode are fixed on the substrate by fixing anchors.
3. The micro electric field sensor according to claim 2, wherein the micro electric field sensor has a symmetrical structure in which two or more resonators are sequentially arranged.
4. The micro electric field sensor according to claim 1, wherein the capacitive coupling between the adjacent resonators includes electrostatic plate capacitive coupling and/or electrostatic comb capacitive coupling, the movable plate facing each other or the movable comb teeth interlaced with each other between the adjacent resonators constitute a coupling capacitor, and the movable plate or the movable comb teeth are respectively connected to two adjacent resonators.
5. The micro electric field sensor according to claim 1, wherein the excitation electrodes comprise plate excitation electrodes and/or comb-tooth excitation electrodes facing the movable plate electrodes fixed to the resonators or alternately arranged outside or inside the first resonator and the third resonator.
6. A miniature electric field sensor according to claim 5, wherein the tuning electrodes are placed on either side of the support beam in the resonator or axially of the support beam in the resonator or both and are connected to the field sensing electrode or voltage source by means of wires or conductor structures.
7. The micro electric field sensor according to claim 2 or 5, wherein the vibration detection electrode comprises a plate detection electrode and/or a comb-tooth detection electrode, which is opposed to the movable plate electrode fixed to the resonator or is staggered with the movable comb-tooth electrode fixed to the resonator, and is disposed inside the first resonator and the third resonator.
8. The miniature electric field sensor according to claim 7, wherein the shielding electrode is disposed on a side surface of the vibration detecting electrode fixing portion or on a lower bottom surface of the sealing cap; the shielding electrode is connected with a reference zero potential and used for shielding interference.
9. The miniature electric field sensor of claim 5, wherein the support beam in the resonator is fixed at both ends to the substrate by means of fixing anchors; or one end of the supporting beam is fixed on the substrate through the fixed anchor point, the other end of the supporting beam is connected with one of the supporting beams which are vertical to each other, the constraint is that one end connected with one of the supporting beams which are vertical to each other can only move along the axial direction, and the two ends of the supporting beam in the vertical direction are fixed on the substrate through the fixed anchor points.
10. The miniature electric field sensor of claim 9, wherein said support beams are arranged in groups of resilient beam structures of straight beams, folded beams, double folded beams, or serpentine beams.
11. The miniature electric field sensor of claim 5, wherein the resonator is a support beam and an I-shaped, rectangular or other shaped mass supported by the support beam.
12. The miniature electric field sensor of claim 11, wherein said resonator is in the shape of a tuning fork or a ring beam.
13. The micro electric field sensor according to claim 2, wherein the first resonator, the second resonator, the third resonator, the excitation electrode, the tuning electrode, the anchor point, the vibration detection electrode, the shielding electrode, the substrate, and the cap are made of a material selected from the group consisting of single crystal silicon, polycrystalline silicon, metal, polymer, and composite material; the material of the electric field induction electrode is selected from monocrystalline silicon, polycrystalline silicon, metal or composite materials.
14. The miniature electric field sensor of claim 1, wherein said sensor is implemented using micro-nano machining technology, micro-electro-mechanical systems (MEMS) technology, SOI MEMS, bulk silicon technology, surface technology, or precision machining technology.
15. A method for manufacturing a miniature electric field sensor as claimed in any of claims 1 to 14, comprising the steps of:
coating photoresist on the front side of the SOI wafer, and patterning the photoresist through a mask;
etching the top layer silicon, and defining the structural shapes of the first resonator, the second resonator, the third resonator, the electrode unit and the fixed anchor point;
removing the photoresist and cutting;
and removing the oxide layers below the first resonator, the second resonator, the third resonator and the electrode unit by using HF solution or HF gas, releasing the structure, and retaining the oxide layers below the fixed anchor points to enable the oxide layers to be fixed on the substrate silicon.
16. The method of claim 15, wherein the oxide layer is retained during the dicing step so as not to damage the fragile resonator structure during the dicing process.
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| CN113125865B (en) * | 2021-04-09 | 2023-04-14 | 中国科学院空天信息创新研究院 | Vibration capacitance type micro electric field sensor, preparation method thereof and electric field sensor |
| CN113671276B (en) * | 2021-09-10 | 2023-07-07 | 中国科学院空天信息创新研究院 | Space electric field measuring device and system |
| CN113655300B (en) * | 2021-09-10 | 2024-05-17 | 中国科学院空天信息创新研究院 | Resonant electric field sensor and preparation method thereof |
| CN114113813B (en) * | 2021-11-24 | 2022-06-28 | 北京中科飞龙传感技术有限责任公司 | Self-adaptive MEMS electric field sensor and structure thereof |
| CN117517805B (en) * | 2023-11-21 | 2024-09-13 | 北京信息科技大学 | Resonant electrostatic field sensor and electric field detection device |
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