CN112507828B - Optical fingerprint identification structure, manufacturing method thereof and display device - Google Patents
Optical fingerprint identification structure, manufacturing method thereof and display device Download PDFInfo
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- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
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- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
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- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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Abstract
The embodiment of the application discloses an optical fingerprint identification structure, a manufacturing method thereof and a display device. The optical fingerprint identification structure of the embodiment comprises a display area and a sensing area, wherein the sensing area comprises a second TFT, a PIN photodiode and a capacitor, and the second TFT comprises a source electrode, a drain electrode, an active area, a first metal part and a second metal part; the PIN photodiode comprises an N-type doped region, a P-type doped region, an intrinsic region, a third metal part and a fourth metal part, wherein the P-type doped region is electrically connected with the source electrode; the capacitor comprises a fifth metal part as a first polar plate of the capacitor, and the orthographic projection of the fifth metal part on the substrate covers orthographic projections of the second metal part and the third metal part on the substrate, and the second metal part and the third metal part are used as a second polar plate of the capacitor. The optical fingerprint identification structure realizes the fingerprint identification function and simultaneously transversely arranges the PIN photodiode, thereby effectively improving the integration level of the structure.
Description
Technical Field
The application relates to the technical field of fingerprint identification. More particularly, to an optical fingerprint identification structure, a manufacturing method thereof and a display device.
Background
Fingerprint is unique to everyone, and along with the development of the market, fingerprint identification technology is one of important functions of electronic products, and this function is focused by many electronic manufacturers and applied to electronic products, such as mobile phones, tablet computers, smart wearable devices and the like. Therefore, before the user operates the electronic device with the fingerprint identification function, the user can carry out authority verification only by touching the fingerprint identification module of the electronic device with a finger, and the authority verification process is simplified.
At present, the integration of the optical fingerprint identification technology into the display panel is a future display direction, so that the fingerprint identification area can be located in the display area of the display panel, however, the integration level of the technology of integrating the optical fingerprint identification into the display panel and the identification precision of the optical fingerprint identification in the prior art are lower, the situation that the optical fingerprint identification cannot be normally identified often occurs, and the user experience is affected.
Disclosure of Invention
The application aims to provide an optical fingerprint identification structure, a manufacturing method thereof and a display device, which are used for solving at least one of the problems in the prior art.
In order to achieve the above purpose, the application adopts the following technical scheme:
the first aspect of the present application provides an optical fingerprint identification structure, comprising a display area and a sensing area,
The display area includes:
A first TFT formed on the substrate;
A light emitting device driven to emit light by the first TFT;
The sensing region includes:
a second TFT, a PIN photodiode, and a capacitor formed on the substrate,
Wherein,
The second TFT comprises a source electrode, a drain electrode, an active region, a first metal part electrically connected with the drain electrode through a first via hole on the side of the drain electrode far away from the substrate, and a second metal part electrically connected with the source electrode through a second via hole on the side of the source electrode far away from the substrate;
The PIN photodiode comprises an N-type doped region, a P-type doped region, an intrinsic region between the N-type doped region and the P-type doped region, a third metal part electrically connected with the P-type doped region through a third via hole at the side, far away from the substrate, of the P-type doped region, and a fourth metal part electrically connected with the N-type doped region through a fourth via hole at the side, far away from the substrate, of the N-type doped region, wherein the P-type doped region is electrically connected with the source electrode;
The capacitor comprises a fifth metal part electrically connected with the fourth metal part through a fifth via hole at the side of the fourth metal part far away from the substrate as a first polar plate of the capacitor, wherein the fifth metal part extends towards the second TFT side, so that the orthographic projection of the fifth metal part on the substrate covers the orthographic projections of the second metal part and the third metal part on the substrate, and the second metal part and the third metal part serve as the second polar plate of the capacitor.
According to the optical fingerprint identification structure provided by the first aspect of the application, the PIN photodiode is transversely arranged, the fifth metal part, the second metal part and the third metal part respectively form the first polar plate and the second polar plate of the capacitor, so that light reflected by the finger fingerprint is incident into the intrinsic region through the fifth metal part, the fingerprint identification function is realized, and meanwhile, the whole thickness of the optical fingerprint identification structure is not increased, so that the thinning of the optical fingerprint identification structure is facilitated, and the integration level of the optical fingerprint identification structure is effectively improved; and the PIN photodiodes are transversely arranged, compared with the conventional photodiodes which are arranged in a stacked mode, the PIN photodiodes can be formed on the same layer, the forming process of the structure and the complexity of the optical identification structure are simplified, and the PIN photodiodes are higher in compatibility with the conventional OLED structure manufacturing process.
In one possible implementation, the P-type doped region is electrically connected to the source through the second metal portion and the third metal portion.
In one possible implementation manner, the P-type doped region and the source electrode are the same region, the second via and the third via are the same via, and the second metal portion and the third metal portion are the same metal portion.
The second metal part and the third metal part of the implementation mode are the same metal part, namely the PIN photodiode and the second TFT share one electrode, so that the preparation process of the structure is further simplified, and the preparation efficiency of the optical fingerprint identification structure is improved; meanwhile, the realization mode can also effectively realize the contact resistance between the PIN photodiode and the second TFT, so that the fingerprint identification precision and the identification sensitivity of the optical fingerprint identification structure are improved.
In one possible implementation, a first opening is formed in the fifth metal portion, an orthographic projection of the first opening on the substrate covering an orthographic projection of the intrinsic region on the substrate.
According to the implementation mode, the first opening is formed in the fifth metal part, namely the first opening is formed in the first polar plate of the capacitor, so that the first polar plate is formed into the annular capacitor, the capacitance area of the capacitor is increased, the storage capacity of the capacitor is further increased, and the fingerprint identification precision of the optical fingerprint identification structure is further improved.
In one possible implementation, the fourth metal part includes
A connection part;
A first extending portion and a second extending portion extending toward the second TFT side in a direction parallel to the substrate, wherein a connecting portion connects the first extending portion and the second extending portion, the third metal portion is formed between the first extending portion and the second extending portion, extends toward the PIN photodiode side,
Wherein, the orthographic projection of the first opening on the substrate covers the orthographic projection of the interval between the third metal part and the connecting part on the substrate.
According to the implementation mode, the first extending part, the second extending part and the connecting part are arranged, so that the second polar plate of the capacitor is divided into two sub-polar plates, the second polar plate is formed into the annular capacitor, the capacitance area of the capacitor is further increased, the storage capacity of the capacitor is improved, and the fingerprint identification precision of the optical fingerprint identification structure is further improved; in addition, the first opening and the interval between the third metal part and the connecting part form a collimation structure, and the fifth metal part and the third metal part shield stray light incident from the side surface at a large angle, so that the stray light is filtered, the interference of the stray light is reduced, the signal quantity of light incident into the PIN photodiode is improved, and the recognition precision of fingerprint recognition is enhanced.
In one possible implementation, the method further comprises
A pixel defining layer formed on the fifth metal portion;
and a second opening formed in the pixel defining layer corresponding to the first opening.
According to the implementation mode, the second opening corresponding to the first opening is formed, so that the collimation structure is formed, the fifth metal part and the pixel definition layer shield stray light incident from the side face at a large angle, the stray light is filtered, the interference of the stray light is reduced, the signal quantity of light incident into the PIN photodiode is improved, and the recognition precision of fingerprint recognition is enhanced.
In one possible implementation, the method further comprises
A polysilicon layer formed on the substrate, wherein,
The source electrode, the drain electrode, the N-type doped region and the P-type doped region are doped regions formed in the polysilicon layer;
The intrinsic region and the active region are undoped regions in the polysilicon layer.
In one possible implementation, the first TFT includes a sixth metal portion electrically connected to its source electrode at its source electrode side away from the substrate via a sixth via hole and a seventh metal portion electrically connected to its drain electrode at its drain electrode side away from the substrate via a seventh via hole;
the light emitting device includes an anode electrically connected to a drain electrode of the first TFT through an eighth via.
In one possible implementation, the fifth metal portion is disposed in the same layer as the anode;
the first to fourth metal portions are arranged in the same layer as the sixth to seventh metal portions.
In this implementation manner, the fifth metal portion and the anode are arranged in the same layer, and the first to fourth metal portions and the sixth to seventh metal portions are arranged in the same layer, that is, the anode and the fifth metal portions can be formed simultaneously by the same forming process, and the first to fourth metal portions and the sixth to seventh metal portions can be formed simultaneously by the same forming process, so that the metal structure is well matched with the manufacturing process in the prior art, and the design of the forming process is simplified.
A second aspect of the present application provides a display device comprising a plurality of optical fingerprint recognition structures as provided in the first aspect of the present application arranged in an array.
A third aspect of the present application provides a method for manufacturing an optical fingerprint identification structure, including:
forming a first TFT and a light emitting device driven to emit light by the first TFT in a region where a display region is formed on a substrate;
forming a second TFT, a PIN photodiode, and a capacitor in a region where the sensing region is formed on the substrate, wherein
The second TFT is formed to include a source electrode, a drain electrode, an active region, a first metal portion electrically connected to the drain electrode through a first via hole on a side of the drain electrode away from the substrate, and a second metal portion electrically connected to the source electrode through a second via hole on a side of the source electrode away from the substrate;
The PIN photodiode is formed to comprise an N-type doped region, a P-type doped region, an intrinsic region between the N-type doped region and the P-type doped region, a third metal part electrically connected with the P-type doped region through a third via hole on the side, far away from the substrate, of the P-type doped region, and a fourth metal part electrically connected with the N-type doped region through a fourth via hole on the side, far away from the substrate, of the N-type doped region, wherein the P-type doped region is electrically connected with the source electrode;
The capacitor is formed to include a fifth metal portion electrically connected to the fourth metal portion through a fifth via on a side of the fourth metal portion remote from the substrate as a first plate of the capacitor, wherein the fifth metal portion extends toward the second TFT side such that an orthographic projection of the fifth metal portion on the substrate covers an orthographic projection of the second metal portion and the third metal portion on the substrate, the second metal portion and the third metal portion serving as a second plate of the capacitor.
The beneficial effects of the application are as follows:
According to the optical fingerprint identification structure, the PIN photodiodes are transversely arranged, the fifth metal part, the second metal part and the third metal part respectively form the first polar plate and the second polar plate of the capacitor, so that light reflected by the finger fingerprint is incident into the intrinsic region through the fifth metal part, the whole thickness of the optical fingerprint identification structure is not increased while the fingerprint identification function is realized, the optical fingerprint identification structure is light and thin, and the integration level of the optical fingerprint identification structure is effectively improved; and the PIN photodiodes are transversely arranged, compared with the conventional photodiodes which are arranged in a stacked mode, the PIN photodiodes can be formed on the same layer, the forming process of the structure and the complexity of the optical identification structure are simplified, and the PIN photodiodes are higher in compatibility with the conventional OLED structure manufacturing process.
Drawings
The following describes the embodiments of the present application in further detail with reference to the drawings.
Fig. 1 shows a schematic circuit diagram of a second TFT, PIN photodiode, and capacitor of one embodiment of the present application.
Fig. 2 shows a structural cross-sectional view of an optical fingerprint recognition structure of one embodiment of the present application.
Fig. 3 is a structural cross-sectional view showing an optical fingerprint recognition structure of still another embodiment of the present application.
Fig. 4 shows a structural perspective view of a fifth metal part, a fourth metal part, a third metal part, and a PIN photodiode according to an embodiment of the present application.
Fig. 5 shows a schematic light ray diagram of a collimating structure according to an embodiment of the present application.
Fig. 6-10 are cross-sectional views of structures corresponding to main steps in a process of fabricating an optical fingerprint recognition structure according to an embodiment of the present application.
Fig. 11-15 are cross-sectional views of structures corresponding to main steps in a manufacturing process of an optical fingerprint identification structure according to another embodiment of the application.
Detailed Description
In order to more clearly illustrate the present application, the present application will be further described with reference to examples and drawings. Like parts in the drawings are denoted by the same reference numerals. It is to be understood by persons skilled in the art that the following detailed description is illustrative and not restrictive, and that this application is not limited to the details given herein.
In the description of the present application, it should be noted that the azimuth or positional relationship indicated by the terms "upper", "lower", etc. are based on the azimuth or positional relationship shown in the drawings, and are merely for convenience of describing the present application and simplifying the description, and are not indicative or implying that the apparatus or element in question must have a specific azimuth, be constructed and operated in a specific azimuth, and thus should not be construed as limiting the present application. Unless specifically stated or limited otherwise, the terms "mounted," "connected," and "coupled" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
It is further noted that in the description of the present application, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
In view of the technical problems in the prior art, as shown in fig. 1 and 2, an embodiment of the present application provides an optical fingerprint recognition structure 100, which includes a display area and a sensing area, wherein the display area includes a first TFT formed on a substrate 110 and a light emitting device driven by the first TFT to emit light to a finger, and the light emitting device is driven by the first TFT. The sensing region includes a second TFT130, a PIN photodiode 140, and a capacitor 150 formed on the substrate, wherein the second TFT130 includes a source electrode 131, a drain electrode 132, an active region 133, a first metal portion 135 electrically connected to the drain electrode 132 through a first via 134 on a side of the drain electrode 132 remote from the substrate, and a second metal portion 137 electrically connected to the source electrode 131 through a second via 136 on a side of the source electrode 131 remote from the substrate 110.
As shown in fig. 1, the PIN photodiode 140 is configured to receive light reflected by a finger fingerprint, convert the reflected light signal into an electrical signal, store the electrical signal in the capacitor 150, and when the capacitor 150 is full, the second TFT130 is turned on to drive the capacitor 150 to discharge, and detect the amount of the electrical signal in the capacitor 150, thereby realizing fingerprint recognition.
In addition, the PIN photodiode 140 includes an N-type doped region 141, a P-type doped region 142, an intrinsic region 143 between the N-type doped region 141 and the P-type doped region 142, a third metal portion 145 electrically connected to the P-type doped region 142 through a third via 144 on a side of the P-type doped region 142 away from the substrate 110, and a fourth metal portion 147 electrically connected to the N-type doped region 141 through a fourth via 146 on a side of the N-type doped region 141 away from the substrate 110, wherein the P-type doped region 142 is electrically connected to the source 131.
In one specific example, the N-type doped region 141 may be an N-type semiconductor material region doped with an N-type impurity (e.g., PH 3, phosphine); in another specific example, the P-type doped region 142 may be a P-type semiconductor material region doped with a P-type impurity (e.g., BF 3, boron trichloride); in yet another specific example, the Intrinsic region 143 is a region of low doped Intrinsic (Intrinsic) semiconductor material, i.e., a region of type I semiconductor material.
Compared to the PIN photodiode in the prior art, the N-type semiconductor material layer, the I-type semiconductor material layer and the P-type semiconductor material layer are generally stacked in order, in this embodiment, the PIN photodiode is disposed laterally, that is, the N-type doped region 141, the P-type doped region 142 and the intrinsic region 143 in the PIN photodiode 140 are located on the same layer, and the N-type doped region 141 and the P-type doped region 142 can be doped by performing a doping process on the same layer to form the PIN photodiode 140, so that the forming process of the PIN photodiode 140 is simplified, the thickness of the PIN photodiode 140 is reduced, and the overall thickness of the optical fingerprint identification structure 100 is reduced.
The doping process may be an ion implantation process or a diffusion process. In one specific example, an ion implantation process may be employed that has various impurities incorporated into different semiconductors at a lower temperature, thereby precisely controlling the concentration profile and implantation depth of the incorporated ions and enabling large-area uniform doping.
Further, the capacitor 150 in this embodiment includes a fifth metal portion 152 electrically connected to the fourth metal portion 147 through a fifth via 151 on a side of the fourth metal portion 147 away from the substrate 110 as a first plate of the capacitor 150, wherein the fifth metal portion 152 extends toward the second TFT130 side such that an orthographic projection of the fifth metal portion 152 on the substrate 110 covers an orthographic projection of the second metal portion 137 and the third metal portion 145 on the substrate 110, the second metal portion 137 and the third metal portion 145 serving as a second plate of the capacitor 150.
As shown in fig. 2, the optical recognition structure 100 of this embodiment drives the light emitting device to emit light to a finger through the first TFT, after the light is reflected by the finger fingerprint, the reflected light is refracted through the fifth metal portion 152, and then is incident into the intrinsic region 143 of the PIN photodiode 140, i.e., the I-type semiconductor material region, the PIN photodiode converts the reflected light signal 140 into an electrical signal, and then stores the electrical signal on the first and second plates of the capacitor 150 through the second and third metal portions 137 and 145 and the fifth metal portion 152, and after the capacitor 150 is fully charged, the second TFT130 is turned on and drives the capacitor 150 to discharge, thereby detecting the electrical signal amount in the capacitor 150, so as to realize fingerprint recognition.
The optical fingerprint identification structure 100 of this embodiment forms the first plate and the second plate of the capacitor 150 by transversely arranging the PIN photodiode 140, the fifth metal portion 152, the second metal portion 137 and the third metal portion 145, so that the light reflected by the fingerprint of the finger is incident into the intrinsic region 143 through the fifth metal portion 152, and the overall thickness of the optical fingerprint identification structure 100 is not increased while the fingerprint identification function is realized, thereby facilitating the thinning of the optical fingerprint identification structure 100 and effectively improving the integration level of the optical fingerprint identification structure 100; and the PIN photodiodes 140 are laterally arranged, compared with the conventional photodiodes which are arranged in a stacked manner, the PIN photodiodes can be formed on the same layer, the formation process of the structure and the complexity of the optical identification structure 100 are simplified, and the compatibility with the preparation process of the conventional OLED structure is higher.
In one specific embodiment, as shown in fig. 2, the P-type doped region 142 is electrically connected to the source electrode 131 through the second metal part 137 and the third metal part 145. In another specific embodiment, as shown in fig. 3, the P-doped region 142 and the source 131 are the same region, the second via 136 and the third via 144 are the same via, and the second metal portion 137 and the third metal portion 145 are the same metal portion, that is, the PIN photodiode 140 and the second TFT130 share one electrode, and are not required to be connected through other layers or metal portions, so that materials and manufacturing cost are saved, the forming process of the PIN photodiode 140 and the second TFT130 is simplified, the manufacturing process of the optical fingerprint identification structure 100 is simplified, and the manufacturing efficiency of the optical fingerprint identification structure 100 is improved; meanwhile, the embodiment can also effectively increase the contact resistance between the PIN photodiode 140 and the second TFT130, thereby improving the fingerprint recognition accuracy and recognition sensitivity of the optical fingerprint recognition structure 100.
In a specific embodiment, as shown in fig. 4, the fifth metal portion 152 forms a first opening 153, and the orthographic projection of the first opening 153 on the substrate 110 covers the orthographic projection of the intrinsic region 143 on the substrate 110, so that the reflected light reflected by the finger fingerprint can be directly incident on the intrinsic region 143 from the first opening 153 formed by the fifth metal portion 152 without refraction of the fifth metal portion 152, so as to reduce loss of the reflected light, improve light quantity of the reflected light incident on the intrinsic region 143 of the PIN photodiode 140, improve light utilization rate and incident light quantity of the PIN photodiode 140, and enhance sensitivity of optical fingerprint identification. Meanwhile, by forming the first opening 153 in the fifth metal portion 152, for example, forming the first opening 153 in the center of the first plate of the capacitor 150, the first plate is formed into a ring-shaped capacitor, so as to increase the capacitance area of the capacitor 150, further increase the storage capacity of the capacitor 150, and further improve the fingerprint identification precision of the optical fingerprint identification structure 100.
In a specific embodiment, as shown in fig. 4, the fourth metal portion 147 includes a connection portion 1471 and first and second extension portions 1472 and 1473 extending toward the second TFT130 side in a direction parallel to the substrate 110, wherein the connection portion 1471 connects the first and second extension portions 1472 and 1473 to form a shape similar to "冂", the third metal portion 145 is formed between the first and second extension portions 1472 and 1473 and extends toward the PIN photodiode 140 side, the structure is such that the second plate of the capacitor 150 is divided into two sub-plates, i.e., the second and third metal portions 137 and 145 are first sub-plates, and the first, third and connection portions 1472 and 1473 are second sub-plates, and the fifth metal portion 152 is electrically connected to the connection portion 1471 through the fifth via 151. And the interval between the third metal part 145 and the connection part 1471, the interval between the third metal part 145 and the first extension part 1472, and the interval between the third metal part 145 and the second extension part 1473, so that the second electrode is formed into a ring-shaped capacitor, the capacitance area of the capacitor 150 is further increased, the storage capacity of the capacitor 150 is improved, and the fingerprint recognition precision of the optical fingerprint recognition structure 100 is further improved.
In this embodiment, the orthographic projection of the first opening 153 on the substrate 110 covers the orthographic projection of the space between the third metal portion 145 and the connection portion 1471 on the substrate 110, such as the through hole 148 formed between the third metal portion 145 and the connection portion 1471. The area of the first opening 153 may be greater than or equal to the interval between the third metal part 145 and the connection part 1471. In a specific example, the area of the first opening 153 is larger than the area of the interval between the third metal part 145 and the connection part 1471, and then the interval between the first opening 153 and the third metal part 145 and the connection part 1471 forms an inverted trapezoid structure. In another specific example, the area of the first opening 153 is the same as the area of the space between the third metal portion 145 and the connection portion 1471, which is equal to the area of the intrinsic region 153 of the PIN photodiode 140, and since the PIN photodiode 140 is located lower in the optical recognition structure 100, by setting the first opening 153 and the space between the third metal portion 145 and the connection portion 1471, a similar alignment structure can be formed, thereby blocking the incidence of stray light into the intrinsic region 143 of the PIN photodiode 140, reducing the interference of the stray light, and thus improving the recognition accuracy of fingerprint recognition.
The collimating structure described above refers to a structure that allows only light incident in the vertical direction to enter, and blocks light incident at a large angle to the side from entering. In this embodiment, a PIN photodiode 140 is disposed near each light emitting device for receiving light reflected by the finger print from the light emitting device. In one specific example, the pitch distance between the PIN photodiode 140 and the light emitting device is less than 50 μm. Therefore, in this specific example, most of the light reflected by the finger print emitted by the light emitting device may be regarded as light incident in the vertical direction, that is, the portion of the light incident in the vertical direction is signal light, and the light incident in the periphery (such as light incident at a large angle to the side) may be regarded as stray light, for example, ambient light. Therefore, by arranging the collimating structure to block light entering from the side surface at a large angle, namely, stray light entering into the PIN photodiode, stray light is filtered, and light (signal light) entering in the vertical direction is ensured to enter into the PIN photodiode 140, so that the signal quantity of the PIN photodiode is improved.
As shown in fig. 5, fig. 5 shows a schematic light ray diagram of a collimation structure, wherein fig. 5 shows three incident light rays, including a first light ray 201 incident in a vertical direction, and a second light ray 202 and a third light ray 203 incident from a side surface at a large angle, wherein the first light ray 201 is effective light, and the second light ray 202 and the third light ray 203 are stray light caused by ambient light. As shown in fig. 5, when the second light ray 202 and the third light ray 203 are incident on the collimating structure, the second light ray 202 is blocked by the fifth metal portion 152, and the third light ray 203 passes through the first opening 153 of the fifth metal portion 152 and is blocked by the third metal portion 145, thereby filtering the stray light. The vertically incident ambient light is often directly shielded by the finger and cannot be incident into the collimating structure, so that the light rays of the vertically incident ambient light are negligible, and the light rays incident along the vertical direction are basically signal light emitted to the finger through the light emitting device and reflected by the finger print.
In this embodiment, the first opening 153 and the third metal portion 145 are disposed at intervals with the connection portion 1471, so that the arrangement is similar to a collimating structure, and the fifth metal portion 152 and the third metal portion 145 shield stray light incident from a large angle on the side surface, so that stray light is filtered, interference of stray light is reduced, the signal quantity of light incident into the PIN photodiode 140 is improved, and recognition accuracy of fingerprint recognition is enhanced.
In a specific embodiment, the optical fingerprint recognition structure 100 further includes a pixel defining layer 160 formed on the fifth metal portion 152, and a second opening 161 formed in the pixel defining layer 160, the second opening 161 corresponding to the first opening 153.
In one specific example, the material of the pixel defining layer 160 may be a material such as silicone, silicon nitride, barium sulfate, aluminum oxide, magnesium oxide, polyimide, epoxy, polyphenylene oxide, or the like, but the exemplary embodiment of the present application is not limited thereto.
In this implementation manner, by providing the second opening 160 corresponding to the first opening 153, the first opening 153 and the second opening 161 form a collimation structure, and the pixel defining layer 160 shields stray light incident from a large angle on the side surface, so that stray light is filtered, interference of stray light is reduced, signal quantity of light incident into the PIN photodiode 140 is improved, and recognition accuracy of fingerprint recognition is enhanced.
In a specific embodiment, the optical fingerprint recognition structure 100 includes the first opening 153, the second opening 161 corresponding to the first opening 153, and the third metal portion 145 and the connection portion 1471, so that the intervals among the first opening 153, the second opening 161, the third metal portion 145 and the connection portion 1471 form a collimating structure, and the fifth metal portion 152, the third metal portion 145, the connection portion 1471 and the pixel defining layer 160 shield stray light incident at a large angle on the side surface, further filter the stray light, reduce interference of the stray light, and further improve the signal quantity of light incident into the PIN photodiode 140, thereby enhancing recognition accuracy of fingerprint recognition.
In a specific embodiment, the optical fingerprint recognition structure 100 further includes a polysilicon layer formed on the substrate 110, wherein the source 121, the drain 122, the source 131, the drain 132, the N-type doped region 141 and the P-type doped region 142 of the first TFT and the second TFT130 are doped regions formed in the polysilicon layer; the intrinsic region 143 and the active regions 123, 133 of the first and second TFTs 130 are undoped regions in the polysilicon layer. In this embodiment, the polysilicon layer is disposed, so that the source 121, the drain 122 of the first TFT, the source 131, the drain 132, the N-type doped region 141, the P-type doped region 142, the intrinsic region 143, the active region 123 of the first TFT, and the active region 133 of the second TFT130 are formed on the same layer, thereby simplifying the formation process of the PIN photodiode 140 and reducing the thickness of the PIN photodiode 140.
In a specific embodiment, the first TFT includes a sixth metal portion 125 electrically connected to its source electrode 121 through a sixth via 124 on a side of its source electrode 121 remote from the substrate 110 and a seventh metal portion 127 electrically connected to its drain electrode 122 through a seventh via 126 on a side of its drain electrode 122 remote from the substrate 110; the light emitting device includes an anode 181 electrically connected to the drain electrode 122 of the first TFT through an eighth via 180.
In a specific embodiment, fifth metal portion 152 is disposed in the same layer as anode 181; the first to fourth metal portions 135 to 147 are provided in the same layer as the sixth to seventh metal portions 125 to 127. That is, the anode 181 and the fifth metal portion 152 may be simultaneously formed through the same forming process, and the first to fourth metal portions 135 to 147 and the sixth to seventh metal portions 125 to 127 may be simultaneously formed through the same forming process, thereby well matching with the manufacturing process in the related art and simplifying the design of the forming process.
Another embodiment of the present application provides a method for manufacturing an optical fingerprint identification structure 100, including:
S101, forming a polysilicon layer on the substrate 110, and forming an active region 123 of the first TFT, an active region 133 of the second TFT130, and an intrinsic region 143 of the PIN photodiode 140 in a region where the polysilicon layer forms a display region and a region where a sensing region is formed, to form a structure as shown in fig. 6.
S102, doping both ends of the active region 123 of the first TFT to form the source 121 and the drain 122 of the first TFT, doping both ends of the active region 133 of the second TFT130 to form the source 131 and the drain 132 of the second TFT130, and forming the N-type doped region 141, the P-type doped region 142, and the intrinsic region 143 of the PIN photodiode 140 to form the structure shown in fig. 7.
Specifically, the PIN photodiode 140 is formed on the polysilicon layer by doping the N-type doped region 141 and the P-type doped region 142 in the polysilicon layer to form the PIN photodiode 140, for example, by ion implantation process at both ends of the intrinsic region 143 of the PIN photodiode 140. In one specific example, the P-type doped region 142 may be implemented by doping with a P-type impurity (e.g., BF 3, boron trichloride) at an implant dose of 1E11-1E13 atoms/cm 2. In another specific example, the N-type doped region 141 may be formed by doping with an N-type impurity (e.g., PH 3, phosphine) at an implant dose of 1E11-1E13 atoms/cm 2. The ion implantation process can block the sight through the patterned photoresist, and the patterned photoresist can be prepared through an exposure process.
S103, forming an insulating layer 170, a dielectric layer 190 covering the source 121, the drain 122 and the active region 123 of the first TFT, the source 131, the drain 132 and the active region 133 of the second TFT130, and the PIN photodiode 140, and forming a first metal portion 135 electrically connected to the drain 132 of the second TFT130 through the first via 134, a second metal portion 137 electrically connected to the source 131 of the second TFT130 through the second via 136, a third metal portion 145 electrically connected to the P-type doped region 142 through the third via 144, a fourth metal portion 147 electrically connected to the N-type doped region 141 through the fourth via 146, a sixth metal portion 125 electrically connected to the source 121 of the first TFT through the sixth via 124, and a seventh metal portion 127 electrically connected to the drain 122 of the first TFT through the seventh via 126 on the dielectric layer 190 to form a structure as shown in fig. 8, wherein the P-type doped region 142 is electrically connected to the source 131 through the second metal portion 137 and the third metal portion 145.
S104, a planarization layer 1100 is formed, and a fifth metal portion 152 electrically connected to the fourth metal portion 147 through the fifth via 151 and an anode 181 electrically connected to the drain electrode 122 of the first TFT through the eighth via 180 are formed on the planarization layer 1100. Wherein, the fifth metal portion 152 has a first opening 153 formed therein, and the orthographic projection of the first opening 153 on the substrate 110 covers the orthographic projection of the intrinsic region 143 on the substrate 110 to form the structure as shown in fig. 9.
S105, forming a pixel defining layer 160, forming a second opening 161 corresponding to the first opening 153 on the pixel defining layer 160, and forming an opening in a region where the display region is formed to expose the anode 181, so as to form a structure as shown in fig. 10.
S106, covering the packaging layer 1200 to form the structure shown in FIG. 2.
Still another embodiment of the present application provides a method for manufacturing an optical fingerprint identification structure, including:
s201, a polysilicon layer is formed on the substrate 110, and an active region 123 and an undoped region 300 of the first TFT are formed in a region where the polysilicon layer forms a display region and a region where a sensing region is formed, to form a structure as shown in fig. 11.
S202, doping both ends of the active region 123 of the first TFT to form the source 121 and the drain 122 of the first TFT, and doping both ends of the undoped region 300 to form the second TFT130 and the PIN photodiode 140 to form the structure shown in fig. 12. The P-doped region 142 of the PIN photodiode 140 is the same region as the source 131 of the second TFT 130.
S203, an insulating layer 170, a dielectric layer 190 are formed to cover the source 121, the drain 122 and the active region 123 of the first TFT, the source 131, the drain 132 and the active region 133 of the second TFT130, and the PIN photodiode 140, and a first metal portion 135 electrically connected to the drain 132 of the second TFT130 through the first via 134, a second metal portion 137 electrically connected to the source 131 of the second TFT130 through the second via 136, a third metal portion 145 electrically connected to the P-type doped region 142 through the third via 144, a fourth metal portion 147 electrically connected to the N-type doped region 141 through the fourth via 146, a sixth metal portion 125 electrically connected to the source 121 of the first TFT through the sixth via 124, and a seventh metal portion 127 electrically connected to the drain 122 of the first TFT through the seventh via 126 are formed on the dielectric layer 190 to form the structure shown in fig. 13. The second via 136 and the third via 144 are the same via, and the second metal portion 137 and the third metal portion 145 are the same metal portion.
S204, a planarization layer 1100 is formed, and a fifth metal portion 152 electrically connected to the fourth metal portion 147 through the fifth via 151 and an anode 181 electrically connected to the drain electrode 122 of the first TFT through the eighth via 180 are formed on the planarization layer 1100. Wherein, the fifth metal portion 152 has a first opening 153 formed therein, and the orthographic projection of the first opening 153 on the substrate 110 covers the orthographic projection of the intrinsic region 143 on the substrate 110 to form the structure as shown in fig. 14.
S205, forming a pixel defining layer 160, forming a second opening 161 corresponding to the first opening 153 on the pixel defining layer 160, and forming an opening in a region where the display region is formed to expose the anode 181, so as to form a structure as shown in fig. 15.
S206, covering the packaging layer 1100 to form the structure shown in FIG. 3.
A further embodiment of the present application provides a display device including a plurality of optical fingerprint recognition structures 100 as provided in the above embodiments arranged in an array. The display device may be any product or component with a display function, such as electronic paper, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, etc., which is not limited in this embodiment.
It should be understood that the foregoing examples of the present application are provided merely for clearly illustrating the present application and are not intended to limit the embodiments of the present application, and that various other changes and modifications may be made therein by one skilled in the art without departing from the spirit and scope of the present application as defined by the appended claims.
Claims (11)
1. An optical fingerprint identification structure comprises a display area and an induction area, and is characterized in that
The display area includes:
A first TFT formed on the substrate;
A light emitting device driven to emit light by the first TFT;
The sensing region includes:
a second TFT, a PIN photodiode, and a capacitor formed on the substrate,
Wherein,
The second TFT comprises a source electrode, a drain electrode, an active region, a first metal part electrically connected with the drain electrode through a first via hole on the side of the drain electrode far away from the substrate, and a second metal part electrically connected with the source electrode through a second via hole on the side of the source electrode far away from the substrate;
The PIN photodiode comprises an N-type doped region, a P-type doped region, an intrinsic region between the N-type doped region and the P-type doped region, a third metal part electrically connected with the P-type doped region through a third via hole at the side, far away from the substrate, of the P-type doped region, and a fourth metal part electrically connected with the N-type doped region through a fourth via hole at the side, far away from the substrate, of the N-type doped region, wherein the P-type doped region is electrically connected with the source electrode;
The capacitor comprises a fifth metal part electrically connected with the fourth metal part through a fifth via hole at the side of the fourth metal part far away from the substrate as a first polar plate of the capacitor, wherein the fifth metal part extends towards the second TFT side, so that the orthographic projection of the fifth metal part on the substrate covers the orthographic projections of the second metal part and the third metal part on the substrate, and the second metal part and the third metal part serve as the second polar plate of the capacitor.
2. The optical fingerprint recognition structure of claim 1, wherein the P-type doped region is electrically connected to the source electrode through the second metal portion and the third metal portion.
3. The optical fingerprint identification structure of claim 1, wherein the P-type doped region and the source are the same region, the second via and the third via are the same via, and the second metal portion and the third metal portion are the same metal portion.
4. An optical fingerprint recognition structure according to any one of claims 1-3, wherein a first opening is formed in the fifth metal portion, an orthographic projection of the first opening on the substrate covering an orthographic projection of the intrinsic region on the substrate.
5. The optical fingerprint recognition structure of claim 4, wherein,
The fourth metal part comprises
A connection part;
a first extension portion and a second extension portion extending toward the second TFT side in a direction parallel to the substrate,
Wherein the connection portion connects the first extension portion and the second extension portion, the third metal portion is formed between the first extension portion and the second extension portion, extends toward the PIN photodiode side,
Wherein, the orthographic projection of the first opening on the substrate covers the orthographic projection of the interval between the third metal part and the connecting part on the substrate.
6. The optical fingerprint recognition structure of claim 4, further comprising
A pixel defining layer formed on the fifth metal portion;
and a second opening formed in the pixel defining layer corresponding to the first opening.
7. The optical fingerprint recognition structure of claim 1, further comprising
A polysilicon layer formed on the substrate, wherein,
The source electrode, the drain electrode, the N-type doped region and the P-type doped region are doped regions formed in the polysilicon layer;
The intrinsic region and the active region are undoped regions in the polysilicon layer.
8. The optical fingerprint recognition structure of claim 1, wherein,
The first TFT comprises a sixth metal part electrically connected with the source electrode of the first TFT through a sixth via hole on the side of the source electrode of the first TFT far away from the substrate and a seventh metal part electrically connected with the drain electrode of the first TFT through a seventh via hole on the side of the drain electrode of the first TFT far away from the substrate;
the light emitting device includes an anode electrically connected to a drain electrode of the first TFT through an eighth via.
9. The optical fingerprint recognition structure of claim 8, wherein,
The fifth metal part and the anode are arranged in the same layer;
the first to fourth metal portions are arranged in the same layer as the sixth to seventh metal portions.
10. A display device comprising a plurality of optical fingerprint recognition structures according to any one of claims 1-9 arranged in an array.
11. A method for manufacturing an optical fingerprint identification structure, comprising:
forming a first TFT and a light emitting device driven to emit light by the first TFT in a region where a display region is formed on a substrate;
forming a second TFT, a PIN photodiode, and a capacitor in a region where the sensing region is formed on the substrate, wherein
The second TFT is formed to include a source electrode, a drain electrode, an active region, a first metal portion electrically connected to the drain electrode through a first via hole on a side of the drain electrode away from the substrate, and a second metal portion electrically connected to the source electrode through a second via hole on a side of the source electrode away from the substrate;
The PIN photodiode is formed to comprise an N-type doped region, a P-type doped region, an intrinsic region between the N-type doped region and the P-type doped region, a third metal part electrically connected with the P-type doped region through a third via hole on the side, far away from the substrate, of the P-type doped region, and a fourth metal part electrically connected with the N-type doped region through a fourth via hole on the side, far away from the substrate, of the N-type doped region, wherein the P-type doped region is electrically connected with the source electrode;
The capacitor is formed to include a fifth metal portion electrically connected to the fourth metal portion through a fifth via on a side of the fourth metal portion remote from the substrate as a first plate of the capacitor, wherein the fifth metal portion extends toward the second TFT side such that an orthographic projection of the fifth metal portion on the substrate covers an orthographic projection of the second metal portion and the third metal portion on the substrate, the second metal portion and the third metal portion serving as a second plate of the capacitor.
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| CN110046610B (en) * | 2019-04-28 | 2021-05-28 | 云谷（固安）科技有限公司 | Fingerprint identification display device, preparation method thereof and display equipment |
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| CN110890388B (en) * | 2019-11-28 | 2022-05-27 | 昆山国显光电有限公司 | Array substrate and display panel |
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