CN112490213A - A three-dimensional transformer based on coaxial through-silicon vias - Google Patents
A three-dimensional transformer based on coaxial through-silicon vias Download PDFInfo
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- CN112490213A CN112490213A CN202011269697.4A CN202011269697A CN112490213A CN 112490213 A CN112490213 A CN 112490213A CN 202011269697 A CN202011269697 A CN 202011269697A CN 112490213 A CN112490213 A CN 112490213A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 77
- 239000010703 silicon Substances 0.000 title claims abstract description 77
- 229910052751 metal Inorganic materials 0.000 claims abstract description 79
- 239000002184 metal Substances 0.000 claims abstract description 79
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000011810 insulating material Substances 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 241000724291 Tobacco streak virus Species 0.000 claims 16
- 230000010354 integration Effects 0.000 abstract description 3
- 230000008878 coupling Effects 0.000 abstract description 2
- 238000010168 coupling process Methods 0.000 abstract description 2
- 238000005859 coupling reaction Methods 0.000 abstract description 2
- 230000002349 favourable effect Effects 0.000 abstract description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Layout of the interconnection structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6605—High-frequency electrical connections
- H01L2223/6616—Vertical connections, e.g. vias
- H01L2223/6622—Coaxial feed-throughs in active or passive substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6672—High-frequency adaptations for passive devices for integrated passive components, e.g. semiconductor device with passive components only
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention discloses a three-dimensional transformer based on coaxial through silicon vias, which comprises a silicon substrate layer, wherein a 2 multiplied by N coaxial through silicon via array is arranged in the silicon substrate layer, one end of the silicon substrate layer is connected with a top dielectric layer, and the other end of the silicon substrate layer is connected with a bottom dielectric layer. Each coaxial silicon through hole is sequentially provided with a central metal column, a dielectric layer, an outer annular metal and an insulating layer which are coaxially arranged from inside to outside. The coaxial silicon through holes are adopted, so that the number of the silicon through holes required by the invention is only 2N, the occupied area of a small chip is realized, and the radio frequency circuit is favorable for improving the integration level of the radio frequency circuit. Meanwhile, the coupling between the primary coil and the secondary coil can be improved by using the coaxial silicon through hole, so that the transformer has lower loss, and the electrical property of the transformer is improved.
Description
Technical Field
The invention belongs to the technical field of passive electronic devices, and relates to a three-dimensional transformer based on coaxial through silicon vias.
Background
The three-dimensional integrated circuit is formed by stacking a plurality of homogeneous and heterogeneous chips or circuit modules in the vertical direction, and realizing electrical connection between devices of different layers by using through-silicon-vias (TSV), so as to jointly complete one or more functions, thereby effectively shortening the length of an interconnection line in the whole chip and improving the density of the devices. There are a large number of redundant through-silicon vias in three-dimensional integrated circuits for stress balancing, noise shielding, heat dissipation, etc. These redundant through-silicon vias are commonly used to fabricate rf passive devices such as: inductors, capacitors, transformers, and filters. The small occupied chip area is a remarkable advantage of the three-dimensional device based on the silicon through hole, so that the three-dimensional device has application potential in high-integration integrated circuits, and therefore, the three-dimensional device is widely researched at home and abroad. The traditional sheet type transformer is of a plane or laminated structure, occupies a large chip area, and affects the integration level of a high-density radio frequency integrated circuit.
Disclosure of Invention
The invention aims to provide a three-dimensional transformer based on coaxial through silicon vias, and solves the problem that the conventional sheet type transformer is of a planar or laminated structure and occupies a large chip area.
The invention adopts the technical scheme that the three-dimensional transformer based on the coaxial silicon through holes comprises a silicon substrate layer, wherein a 2 multiplied by N coaxial silicon through hole array is arranged in the silicon substrate layer, one end of the silicon substrate layer is connected with a top dielectric layer, and the other end of the silicon substrate layer is connected with a bottom dielectric layer.
Each coaxial silicon through hole is sequentially provided with a central metal column, a dielectric layer, an outer annular metal and an insulating layer which are coaxially arranged from inside to outside.
Two layers of metal, a top first metal layer and a top second metal layer are sequentially manufactured in the top dielectric layer from top to bottom.
Two layers of metal, a bottom second metal layer and a bottom first metal layer are sequentially manufactured in the bottom dielectric layer from top to bottom.
The top first metal layer is connected with one end of the outer annular metal of the coaxial silicon through hole, and the other end of the outer annular metal of the coaxial silicon through hole is connected with the bottom first metal to form a primary coil of the transformer.
The second metal layer at the top is connected with one end of the central metal column of the coaxial silicon through hole, and the other end of the central metal column of the coaxial silicon through hole is connected with the second metal at the bottom to form a secondary coil of the transformer.
The primary coil of the transformer is provided with a Portp1、Portp2Two ports, the secondary coil of the transformer being provided with portss1、Ports2Two ports, Portp2、Ports1、Ports2Is always kept unchanged by adjusting Portp1The number of turns of the primary coil can be changed, and the number of turns of the secondary coil can be changed by changing the number N of through-silicon vias in each column.
Port Portp1And Ports2Ground, Ports1And Portp2The input and output ports are used as input and output ports of the transformer and are positioned on two sides of the transformer.
The top dielectric layer and the bottom dielectric layer are made of insulating materials such as silicon dioxide, silicon nitride or silicon oxynitride; the central metal column and the outer annular metal of the coaxial silicon through hole are made of copper or aluminum; the dielectric layer of the coaxial silicon through hole is made of silicon dioxide or metal oxide material; the insulating layer of coaxial silicon uses silicon dioxide, silicon nitride or silicon oxynitride.
The invention has the advantages that the number of the through silicon holes required by the invention is only 2N due to the adoption of the coaxial through silicon holes, so that the occupied area of a small chip is realized, and the invention is favorable for improving the integration level of a radio frequency circuit. Meanwhile, the coupling between the primary coil and the secondary coil can be improved by using the coaxial silicon through hole, so that the transformer has lower loss, and the electrical property of the transformer is improved.
Drawings
Fig. 1 is a three-dimensional view of a coaxial through-silicon-via based three-dimensional transformer of the present invention.
Fig. 2 is a top view of the coaxial through-silicon-via based three-dimensional transformer of the present invention.
Fig. 3 is a partial connection view of the coaxial through-silicon-via based three-dimensional transformer of the present invention.
In the figure, 1.Portp1,2.Portp2，3.Ports1，4.Port s25, a top first metal layer, 6, a top second metal layer, 7, a bottom first metal layer, 8, a bottom second metal layer, 9, a central metal column, 10, a dielectric layer, 11, an outer ring metal, and 12, an insulating layer.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.
A three-dimensional transformer based on coaxial through silicon vias comprises a silicon substrate layer as shown in figure 1, wherein a 2 multiplied by N coaxial through silicon via array is arranged in the silicon substrate layer, one end of the silicon substrate layer is connected with a top dielectric layer, and the other end of the silicon substrate layer is connected with a bottom dielectric layer.
As shown in fig. 2, each of the coaxial through-silicon vias is, from inside to outside, a central metal pillar 9, a dielectric layer 10, an outer annular metal 11 and an insulating layer 12, which are coaxially disposed.
Two layers of metal, a top first metal layer 5 and a top second metal layer 6 are sequentially manufactured in the top dielectric layer from top to bottom.
Two layers of metal, a bottom second metal layer 8 and a bottom first metal layer 7 are sequentially manufactured in the bottom dielectric layer from top to bottom.
The top first metal layer is connected with one end of the outer annular metal of the coaxial silicon through hole, and the other end of the outer annular metal of the coaxial silicon through hole is connected with the bottom first metal to form a primary coil of the transformer.
The second metal layer at the top is connected with one end of the central metal column of the coaxial silicon through hole, and the other end of the central metal column of the coaxial silicon through hole is connected with the second metal at the bottom to form a secondary coil of the transformer.
The primary coil of the transformer is provided with a Port p11、Port p22 two ports, the secondary coil of the transformer is provided with ports s13、Port s24 two ports, Port p22,Port s13，Port s24 is always maintainedUnchanged by adjusting Portp1The position of 1 can change the number of turns of the primary coil, and the number of turns of the secondary coil can be changed by changing the number N of through silicon vias of each column.
As shown in FIG. 3, a Port Port p11 and Port s24 ground, Port s13 and Portp2And 2, the input and output ports are used as the input and output ports of the transformer, and the input and output ports are positioned on two sides of the transformer.
The top dielectric layer and the bottom dielectric layer are made of insulating materials such as silicon dioxide, silicon nitride or silicon oxynitride; the central metal column 9 and the outer annular metal 11 of the coaxial silicon through hole are made of copper or aluminum; the dielectric layer 10 of the coaxial silicon through hole is made of silicon dioxide or metal oxide material; the insulating layer 12 of coaxial silicon is made of silicon dioxide, silicon nitride or silicon oxynitride.
The coaxial through silicon via-based three-dimensional transformer comprises the following components in terms of device structure:
the silicon substrate layer is positioned in the middle of the device, a 2 multiplied by N coaxial silicon through hole array is manufactured in the silicon substrate layer, and each coaxial silicon through hole is sequentially provided with a central metal column, a dielectric layer, an outer annular metal and an insulating layer which are coaxially arranged from inside to outside;
the top dielectric layer is positioned on the silicon substrate layer, and two layers of metal, a top first metal layer and a top second metal layer are sequentially manufactured in the top dielectric layer from top to bottom;
and the bottom dielectric layer is positioned below the silicon substrate layer, and two layers of metal, a bottom second metal layer and a bottom first metal layer are sequentially manufactured in the bottom dielectric layer from top to bottom.
The top first metal layer, the outer annular metal of the coaxial silicon through hole and the bottom first metal are sequentially connected to form a primary coil of the transformer.
And the top second metal layer, the central metal column of the coaxial silicon through hole and the bottom second metal are sequentially connected to form a secondary coil of the transformer.
The primary and secondary windings of the transformer have two ports, respectively Portp1,Portp2,Ports1，Ports2。
Port(s)Portp2,Ports1，Ports2Is always kept unchanged by adjusting Portp1The number of turns of the primary coil can be changed, and the number of turns of the secondary coil can be changed by changing the number N of the through silicon vias of each column, so that the transformers with different turn ratios are realized.
When the transformer works, the Port of the Portp1，Ports2Ground, Ports1，Portp2As the input and output ports of the transformer, the input and output ports are positioned at two sides of the transformer and are convenient to be connected with an external circuit.
In this case, the top and bottom dielectric layers can be made of insulating material silicon dioxide, silicon nitride or silicon oxynitride; the central metal column and the outer annular metal of the coaxial silicon through hole can be copper or aluminum; the dielectric layer of the coaxial silicon through hole can be made of silicon dioxide or metal oxide materials; the insulating layer of the coaxial silicon is made of silicon dioxide, silicon nitride or silicon oxynitride; the metal interconnection line is made of copper or aluminum.
Claims (9)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011269697.4A CN112490213A (en) | 2020-11-13 | 2020-11-13 | A three-dimensional transformer based on coaxial through-silicon vias |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011269697.4A CN112490213A (en) | 2020-11-13 | 2020-11-13 | A three-dimensional transformer based on coaxial through-silicon vias |
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| Publication Number | Publication Date |
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| CN112490213A true CN112490213A (en) | 2021-03-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202011269697.4A Pending CN112490213A (en) | 2020-11-13 | 2020-11-13 | A three-dimensional transformer based on coaxial through-silicon vias |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113314324A (en) * | 2021-05-21 | 2021-08-27 | 厦门通富微电子有限公司 | Preparation method of transformer packaging structure and packaging structure |
| CN113410033A (en) * | 2021-05-31 | 2021-09-17 | 西安理工大学 | TSV-based full-symmetry three-dimensional transformer |
| WO2023206156A1 (en) * | 2022-04-27 | 2023-11-02 | 京东方科技集团股份有限公司 | Filter and manufacturing method therefor, and electronic device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7405642B1 (en) * | 2007-03-09 | 2008-07-29 | United Microelectronics Corp. | Three dimensional transformer |
| JP2012134354A (en) * | 2010-12-22 | 2012-07-12 | Asahi Kasei Electronics Co Ltd | Transformer |
| TW201306213A (en) * | 2011-07-19 | 2013-02-01 | 矽品精密工業股份有限公司 | Through silicon via structure for impedance matching and electrical interconnection |
| US20150200049A1 (en) * | 2014-01-14 | 2015-07-16 | Qualcomm Incorporated | Nested through glass via transformer |
| JP2018133352A (en) * | 2017-02-13 | 2018-08-23 | 株式会社日立製作所 | Iron core for stationary induction apparatus |
| CN109755224A (en) * | 2018-11-27 | 2019-05-14 | 西安电子科技大学 | A compact nested inductor structure based on through-silicon vias and its fabrication method |
-
2020
- 2020-11-13 CN CN202011269697.4A patent/CN112490213A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7405642B1 (en) * | 2007-03-09 | 2008-07-29 | United Microelectronics Corp. | Three dimensional transformer |
| JP2012134354A (en) * | 2010-12-22 | 2012-07-12 | Asahi Kasei Electronics Co Ltd | Transformer |
| TW201306213A (en) * | 2011-07-19 | 2013-02-01 | 矽品精密工業股份有限公司 | Through silicon via structure for impedance matching and electrical interconnection |
| US20150200049A1 (en) * | 2014-01-14 | 2015-07-16 | Qualcomm Incorporated | Nested through glass via transformer |
| JP2018133352A (en) * | 2017-02-13 | 2018-08-23 | 株式会社日立製作所 | Iron core for stationary induction apparatus |
| CN109755224A (en) * | 2018-11-27 | 2019-05-14 | 西安电子科技大学 | A compact nested inductor structure based on through-silicon vias and its fabrication method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113314324A (en) * | 2021-05-21 | 2021-08-27 | 厦门通富微电子有限公司 | Preparation method of transformer packaging structure and packaging structure |
| CN113410033A (en) * | 2021-05-31 | 2021-09-17 | 西安理工大学 | TSV-based full-symmetry three-dimensional transformer |
| WO2023206156A1 (en) * | 2022-04-27 | 2023-11-02 | 京东方科技集团股份有限公司 | Filter and manufacturing method therefor, and electronic device |
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