CN112435922A - 一种在csoi上刻蚀悬臂梁的方法 - Google Patents
一种在csoi上刻蚀悬臂梁的方法 Download PDFInfo
- Publication number
- CN112435922A CN112435922A CN202011264661.7A CN202011264661A CN112435922A CN 112435922 A CN112435922 A CN 112435922A CN 202011264661 A CN202011264661 A CN 202011264661A CN 112435922 A CN112435922 A CN 112435922A
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- CN
- China
- Prior art keywords
- etching
- layer
- insulating layer
- csoi
- cantilever beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000005530 etching Methods 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 19
- 239000000463 material Substances 0.000 claims abstract description 18
- 239000002131 composite material Substances 0.000 claims abstract description 11
- 230000007704 transition Effects 0.000 claims abstract description 11
- 235000012431 wafers Nutrition 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims abstract description 6
- 238000000059 patterning Methods 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 22
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 56
- 239000000758 substrate Substances 0.000 description 10
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0009—Structural features, others than packages, for protecting a device against environmental influences
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/0015—Cantilevers
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Micromachines (AREA)
- Pressure Sensors (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011264661.7A CN112435922A (zh) | 2020-11-11 | 2020-11-11 | 一种在csoi上刻蚀悬臂梁的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202011264661.7A CN112435922A (zh) | 2020-11-11 | 2020-11-11 | 一种在csoi上刻蚀悬臂梁的方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN112435922A true CN112435922A (zh) | 2021-03-02 |
Family
ID=74699914
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202011264661.7A Pending CN112435922A (zh) | 2020-11-11 | 2020-11-11 | 一种在csoi上刻蚀悬臂梁的方法 |
Country Status (1)
Country | Link |
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CN (1) | CN112435922A (zh) |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030032293A1 (en) * | 2001-08-07 | 2003-02-13 | Korean Institute Of Science And Technology | High sensitive micro-cantilever sensor and fabricating method thereof |
US20040145344A1 (en) * | 2001-10-19 | 2004-07-29 | Bushong William C. | Method and apparatus for regulating charging of electrochemical cells |
US20050009299A1 (en) * | 2003-03-31 | 2005-01-13 | Takashi Wada | Method of manufacturing a semiconductor device |
EP1542323A2 (de) * | 2003-11-28 | 2005-06-15 | Dehn + Söhne Gmbh + Co Kg | Überspannungsschutzeinrichtung auf Funkenstreckenbasis, umfassend mindestens zwei in einem druckdichten Gehäuse befindliche Hauptelektroden |
JP2006101005A (ja) * | 2004-09-28 | 2006-04-13 | Toshiba Corp | 薄膜圧電共振器、高周波回路実装体及び薄膜圧電共振器の製造方法 |
US20070037311A1 (en) * | 2005-08-10 | 2007-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of microelectromechanical system |
US20170155038A1 (en) * | 2015-11-30 | 2017-06-01 | Sabic Global Technologies, B.V. | Methods and Systems for Making Piezoelectric Cantilever Actuators |
CN110602616A (zh) * | 2019-08-28 | 2019-12-20 | 武汉大学 | 一种高灵敏度mems压电式麦克风 |
CN111174951A (zh) * | 2020-01-06 | 2020-05-19 | 武汉大学 | 一种压电式传感器及其制备方法 |
-
2020
- 2020-11-11 CN CN202011264661.7A patent/CN112435922A/zh active Pending
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030032293A1 (en) * | 2001-08-07 | 2003-02-13 | Korean Institute Of Science And Technology | High sensitive micro-cantilever sensor and fabricating method thereof |
US20040145344A1 (en) * | 2001-10-19 | 2004-07-29 | Bushong William C. | Method and apparatus for regulating charging of electrochemical cells |
US20050009299A1 (en) * | 2003-03-31 | 2005-01-13 | Takashi Wada | Method of manufacturing a semiconductor device |
EP1542323A2 (de) * | 2003-11-28 | 2005-06-15 | Dehn + Söhne Gmbh + Co Kg | Überspannungsschutzeinrichtung auf Funkenstreckenbasis, umfassend mindestens zwei in einem druckdichten Gehäuse befindliche Hauptelektroden |
JP2006101005A (ja) * | 2004-09-28 | 2006-04-13 | Toshiba Corp | 薄膜圧電共振器、高周波回路実装体及び薄膜圧電共振器の製造方法 |
US20070037311A1 (en) * | 2005-08-10 | 2007-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of microelectromechanical system |
US20170155038A1 (en) * | 2015-11-30 | 2017-06-01 | Sabic Global Technologies, B.V. | Methods and Systems for Making Piezoelectric Cantilever Actuators |
CN110602616A (zh) * | 2019-08-28 | 2019-12-20 | 武汉大学 | 一种高灵敏度mems压电式麦克风 |
CN111174951A (zh) * | 2020-01-06 | 2020-05-19 | 武汉大学 | 一种压电式传感器及其制备方法 |
Non-Patent Citations (1)
Title |
---|
何凯旋;黄斌;段宝明;宋东方;郭群英;: "MEMS悬浮结构深反应离子刻蚀保护方法对比研究", 传感技术学报, no. 02, 15 February 2016 (2016-02-15), pages 52 - 57 * |
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Effective date of registration: 20220408 Address after: 315832 e2025, zone a, Room 401, building 1, No. 88, Meishan Qixing Road, Beilun District, Ningbo, Zhejiang Province Applicant after: Ningbo Huazhang enterprise management partnership (L.P.) Address before: 430072 Hubei Province, Wuhan city Wuchang District of Wuhan University Luojiashan Applicant before: WUHAN University |
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Effective date of registration: 20220824 Address after: No.01, 4th floor, building D7, phase 3, Wuhan Software New Town, No.9 Huacheng Avenue, Donghu New Technology Development Zone, Wuhan City, Hubei Province, 430000 Applicant after: Wuhan Minsheng New Technology Co.,Ltd. Address before: 315832 e2025, zone a, Room 401, building 1, No. 88, Meishan Qixing Road, Beilun District, Ningbo, Zhejiang Province Applicant before: Ningbo Huazhang enterprise management partnership (L.P.) |
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