CN112397860A - Ultra-wideband millimeter wave high-power planar thin-film load - Google Patents
Ultra-wideband millimeter wave high-power planar thin-film load Download PDFInfo
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- CN112397860A CN112397860A CN202011194387.0A CN202011194387A CN112397860A CN 112397860 A CN112397860 A CN 112397860A CN 202011194387 A CN202011194387 A CN 202011194387A CN 112397860 A CN112397860 A CN 112397860A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/24—Terminating devices
- H01P1/26—Dissipative terminations
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Abstract
The invention discloses an ultra-wideband millimeter wave high-power planar thin-film load, and relates to the technical field of communication equipment and radio amplifiers. The invention is realized by the following technical scheme: the resistive film adopts a fan-shaped structure with one end connected with the input electrode (2) and the other end opened, the input electrode (2) is connected with the fan-shaped resistive film through a microstrip impedance line, a single-port thin film circuit is formed based on the fan-shaped resistive film, a radio frequency signal is fed into the input electrode (2) from the input microstrip port (1) and enters the range of the fan-shaped resistive film through the microstrip impedance line, the radio frequency signal is guided to be transmitted to the open end of the fan-shaped resistive film from the tail end of the input electrode (2), and ultra wide band matching and absorption of the. The invention is mainly used for millimeter wave power synthesis systems, array antennas, multi-channel receivers and the like.
Description
Technical Field
The invention relates to an ultra-wideband high-power thin-film load which is mainly used in the technical field of millimeter wave communication equipment and radio amplifiers.
Background
The millimeter wave load is one of important elements in a millimeter wave circuit, is mainly used for realizing reflection-free matching of a transmission line, and the performance of the millimeter wave load directly determines the performance of the millimeter wave circuit. The method is widely applied to millimeter wave circuits such as power synthesis systems, antenna feed networks, couplers and the like.
The millimeter wave load is mainly classified into a waveguide type and a planar type. The waveguide type load has two structures of a rectangular waveguide load and a coaxial load, wherein the rectangular waveguide load has high rated power and is suitable for a high-power application system, and the coaxial load has low rated power, is easy to use and is suitable for the low end of millimeter wave frequency. Compared with a waveguide type load, the planar load has the characteristics of small size, easiness in integration with a planar circuit and the like, and has wide application in a millimeter wave circuit.
Due to the existence of parasitic effect, common patch loads are difficult to apply to millimeter wave frequency bands, thin film loads are mostly adopted in the millimeter wave frequency bands, matching with a square resistive film is achieved through a section of high-characteristic impedance input electrode, and an output electrode is connected with a bottom surface metal ground in a side plating mode. However, when the structure is applied to the high end of millimeter wave frequency, in order to realize good non-reflection matching, the size of the square resistive film needs to be reduced, so that the rated power is reduced, the requirement of millimeter wave high-power plane load is difficult to meet, and the processing difficulty and cost are increased due to the adoption of the output electrode and the side plating process.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provides an ultra-wideband millimeter wave high-power planar load which has the excellent characteristics of wide working bandwidth, high rated power, small size, simple structure, easiness in integration with a planar circuit and the like. The requirement of no reflection matching in the millimeter wave plane circuit is met.
In order to achieve the above object, the present invention provides an ultra-wideband millimeter wave high-power planar thin film load: the method comprises the following steps: the ultra-wideband matching and absorption circuit comprises a metal ground 5 arranged at the bottom of a dielectric substrate 4 and an input electrode 2 arranged on the dielectric substrate 4, and is characterized in that the resistive film is of a fan-shaped structure with one end connected with the input electrode 2 and the other end opened, the input electrode 2 is connected with the fan-shaped resistive film through a microstrip impedance line, a single-port thin film circuit is formed based on the fan-shaped resistive film, a radio-frequency signal is fed into the input electrode 2 from an input microstrip port 1 and enters the range of the fan-shaped resistive film through the microstrip impedance line, the radio-frequency signal is guided to be transmitted to the open end of the fan-shaped resistive film from the.
Compared with the prior art, the invention has the following beneficial effects.
The invention adopts the metal ground arranged at the bottom of the dielectric substrate and the input electrode arranged on the dielectric substrate, thereby avoiding the use of the output electrode and the side plating process, simplifying the processing process of the film load and reducing the production cost. The input electrode (2) is connected with the fan-shaped resistive film through the microstrip impedance line, so that the matching bandwidth of the radio frequency signal is widened. Has the advantages of small volume, light weight, compact structure, safety and convenience. The requirement of no reflection matching in the millimeter wave plane circuit is met.
The fan-shaped resistive film adopting the large-angle fan-shaped structure has large area, is easier to carry out broadband matching on the load under high frequency, and improves the rated power.
The invention adopts radio frequency signals to feed into the input electrode from the input micro-strip port, and enters the range of the fan-shaped resistive film through the micro-strip impedance line, thereby realizing the absorption and matching of the radio frequency signals, realizing larger rated power and improving the total power capacity of the device.
The ultra-wideband millimeter wave film load based on the fan-shaped resistive film has the advantages of small volume, simple structure, wide working bandwidth, good input standing wave, high rated power, easy integration with a planar circuit and the like. The method can meet various application requirements, such as multi-path power synthesis, a phased array feed network, a multi-channel receiver and the like, and has great application advantages.
The invention is suitable for millimeter wave power synthesis systems, array antennas, multi-channel receivers and the like.
Drawings
FIG. 1 is a schematic view of a structure of an ultra-wideband millimeter wave high-power planar thin film load based on a fan-shaped resistive film according to the present invention;
FIG. 2 is a top view of FIG. 1;
FIG. 3 is a side view of FIG. 1;
FIG. 4 is an S-parameter simulation curve of FIG. 1;
in the figure: 1 input microstrip port, 2 input electrode, 3 fan-shaped resistive film, 4 dielectric substrate, 5 metal ground.
The invention is described below with reference to the figures and examples.
Detailed Description
See fig. 1-3. In a preferred embodiment described below, an ultra-wideband millimeter wave high power planar thin film load comprises: the metal ground 5 arranged at the bottom of the dielectric substrate 4 and the input electrode 2 resistive film arranged on the dielectric substrate 4 are of a fan-shaped structure, one end of the fan-shaped structure is connected with the input electrode 2, the other end of the fan-shaped structure is open, the input electrode 2 is connected with the fan-shaped resistive film through a microstrip impedance line, a single-port thin film circuit is formed based on the fan-shaped resistive film, a radio-frequency signal is fed into the input electrode 2 from an input microstrip port 1, enters the range of the fan-shaped resistive film through the microstrip impedance line, and is guided to be transmitted to the open end of the fan-shaped resistive film from the tail end of.
The fan-shaped resistive film has a radius length of one quarter of a waveguide wavelength. The input electrode is matched with the fan-shaped resistive film through a section of quarter waveguide wavelength high-characteristic impedance line. The fan-shaped resistive film terminal is open-circuited to realize ultra wide band matching and absorption of radio frequency signals.
See fig. 4. According to the frequency response curve, the return loss of the input port in the range of 26.0GHz-89.0GHz is about 15dB, and the relative bandwidth reaches 109.6%.
The scope of the invention is not limited to the specific embodiments described. Various modifications to these embodiments described above will be readily apparent to those skilled in the art. The general principles defined by the present invention may be implemented in other embodiments without departing from the spirit or scope of the invention. Any technical solution obtained by performing the same or equivalent replacement on technical elements in the described specific technical solution or technical solution obtained by a person skilled in the art without creative work on the basis of the described specific technical solution should be considered to fall within the protection scope of the present invention.
Claims (3)
1. An ultra-wideband millimeter wave high-power planar thin-film load, comprising: the ultra-wideband matching and absorption circuit comprises a metal ground (5) arranged at the bottom of a dielectric substrate (4) and an input electrode (2) arranged on the dielectric substrate (4), and is characterized in that the resistive film is of a fan-shaped structure with one end connected with the input electrode (2) and the other end open, the input electrode (2) is connected with the fan-shaped resistive film through a microstrip impedance line, a single-port thin film circuit is formed based on the fan-shaped resistive film, a radio-frequency signal is fed into the input electrode (2) from an input microstrip port (1) and enters the range of the fan-shaped resistive film through the microstrip impedance line, the radio-frequency signal is guided to be transmitted to the open end of the fan-shaped resistive film from the tail end.
2. The ultra-wideband millimeter wave high-power planar thin-film load according to claim 1, characterized in that: the fan-shaped resistive film has a radius length of one quarter of a waveguide wavelength.
3. The ultra-wideband millimeter wave high-power planar thin-film load according to claim 2, characterized in that: the input electrode is matched with the fan-shaped resistive film through a section of quarter waveguide wavelength high-characteristic impedance line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011194387.0A CN112397860A (en) | 2020-10-30 | 2020-10-30 | Ultra-wideband millimeter wave high-power planar thin-film load |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011194387.0A CN112397860A (en) | 2020-10-30 | 2020-10-30 | Ultra-wideband millimeter wave high-power planar thin-film load |
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| CN112397860A true CN112397860A (en) | 2021-02-23 |
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| CN202011194387.0A Pending CN112397860A (en) | 2020-10-30 | 2020-10-30 | Ultra-wideband millimeter wave high-power planar thin-film load |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114388999A (en) * | 2021-12-10 | 2022-04-22 | 深圳市道通智能汽车有限公司 | Millimeter wave matching load based on microstrip transmission line and vehicle-mounted millimeter wave radar |
Citations (6)
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|---|---|---|---|---|
| CN102142593A (en) * | 2010-02-02 | 2011-08-03 | 南京理工大学 | Small broadband substrate integrated waveguide planar magic-T structure |
| CN106410341A (en) * | 2016-11-18 | 2017-02-15 | 中国电子科技集团公司第四十研究所 | Broadband high-power load based on planar spiral distribution |
| CN107834138A (en) * | 2017-10-26 | 2018-03-23 | 苏州华博电子科技有限公司 | A kind of composite ceramic-based microstrip isolator |
| CN108242859A (en) * | 2016-12-26 | 2018-07-03 | 中国科学院深圳先进技术研究院 | A kind of 60GHz radio frequency energies collection device |
| CN207625533U (en) * | 2017-12-28 | 2018-07-17 | 南京长峰航天电子科技有限公司 | Ka wave band single-pole double throws PIN switches |
| CN209200149U (en) * | 2018-11-16 | 2019-08-02 | 东莞理工学院 | A kind of integrated commutation antenna with harmonics restraint |
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2020
- 2020-10-30 CN CN202011194387.0A patent/CN112397860A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102142593A (en) * | 2010-02-02 | 2011-08-03 | 南京理工大学 | Small broadband substrate integrated waveguide planar magic-T structure |
| CN106410341A (en) * | 2016-11-18 | 2017-02-15 | 中国电子科技集团公司第四十研究所 | Broadband high-power load based on planar spiral distribution |
| CN108242859A (en) * | 2016-12-26 | 2018-07-03 | 中国科学院深圳先进技术研究院 | A kind of 60GHz radio frequency energies collection device |
| CN107834138A (en) * | 2017-10-26 | 2018-03-23 | 苏州华博电子科技有限公司 | A kind of composite ceramic-based microstrip isolator |
| CN207625533U (en) * | 2017-12-28 | 2018-07-17 | 南京长峰航天电子科技有限公司 | Ka wave band single-pole double throws PIN switches |
| CN209200149U (en) * | 2018-11-16 | 2019-08-02 | 东莞理工学院 | A kind of integrated commutation antenna with harmonics restraint |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114388999A (en) * | 2021-12-10 | 2022-04-22 | 深圳市道通智能汽车有限公司 | Millimeter wave matching load based on microstrip transmission line and vehicle-mounted millimeter wave radar |
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Application publication date: 20210223 |
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