CN112186103B - Resistor structure and production method thereof - Google Patents

Abstract

The invention provides a resistance structure and a manufacturing method thereof, which includes: providing a product to be etched, the product to be etched including a substrate and a resistive film and a multi-layer conduction band film located on the top surface of the substrate in sequence, the product to be etched It has a first area where a conduction band is to be formed and a second area where a resistance is to be formed; selectively etching the multi-layer conduction band film to retain the conduction band film in the first area and removing the conduction band film in other areas; and etching the resistance film Selective etching is performed to retain the resistive film in the second area and remove the resistive film in other areas to form the required resistance structure. Compared with the manufacturing method in the prior art, the method provided by the present invention reduces the number of etching times and shortens the exposure time of the resistive film and the conductive band film to the corrosive liquid, thereby improving the erosion phenomenon of the resistive film pattern.

Description

Resistor structure and production method thereof

Technical field

The present invention relates to the technical field of hybrid integrated circuit chip manufacturing, and more specifically, to a resistor structure and a manufacturing method thereof.

Background technique

As the degree of integration of electronic products continues to increase, the precision of resistive films on chips is also getting higher and higher. In order to produce a resistor with a large resistance in a small area, it is necessary to produce a resistive film with thin lines.

Figures 1 to 4 illustrate currently commonly used methods for preparing fine and small resistors. As shown in Figure 1, a first photoresist layer 10 as a mask is first formed on the surface of the product to be etched. The first photoresist layer 10 covers the area where the conduction band is to be formed and the area where the resistance is to be formed; and then the first photoresist layer 10 is formed on the surface of the product to be etched. The multi-layer conduction band film exposed by a photoresist layer 10 (taking four layers of conduction band film as an example, distinguished by 11-14 from top to bottom) and the resistance film 15 are etched in sequence, and the etched structure As shown in Figure 2; the first photoresist layer 10 is then removed and a second photoresist layer 16 is formed as a mask. As shown in Figure 3, the second photoresist layer 16 covers the area where the conduction band is to be formed. Then, the conduction band films 11, 12, 13 and 14 are sequentially etched to form a structure as shown in Figure 4.

However, using the above process is prone to serious erosion phenomena, resulting in irregular line edges of the resistive film pattern, which is greatly different from the designed resistive film pattern, making it difficult to meet the requirements of precision resistors.

Contents of the invention

In view of this, the present invention provides a resistor structure and a manufacturing method thereof to improve the erosion phenomenon and solve the problem of uneven line edges of the resistive film pattern.

In order to achieve the above objects, the present invention provides the following technical solutions:

A first aspect of the present invention provides a method for manufacturing a resistor structure, including:

An article to be etched is provided. The article to be etched includes a substrate and a resistive film and a multi-layer conductive band film located sequentially on the top surface of the substrate, wherein the article to be etched has a first region to be formed with a conductive band and a first region to be formed with a conductive band. second area of resistance;

Selectively etch the multi-layer conduction band film to retain the conduction band film in the first area and remove the conduction band film in other areas;

The resistive film is selectively etched to retain the resistive film in the second area and remove the resistive film in other areas to form the required resistance structure.

Optionally, selectively etch the multi-layer conduction band film, including:

Forming a first mask layer on the top surface of the product to be etched, the first mask layer covers the conduction band film in the first area and exposes the conduction band film in other areas;

Etching the multi-layer conduction band films sequentially from top to bottom until the resistive film not covered by the first mask layer is exposed;

Remove the first mask layer.

Optionally, etch the multi-layer conduction band films sequentially, including:

The article to be etched covered by the first mask layer is sequentially immersed in an etching solution corresponding to the conductive band film to be etched, and the current conductive band film to be etched is etched.

Optionally, the first mask layer is a photoresist layer.

Optionally, selectively etch the resistive film, including:

A second mask layer is formed on the surface of the product to be etched, and the second mask layer covers the conduction band film in the first area and the resistance film in the second area, exposing the resistance film in other areas;

Etching the resistive film not covered by the second mask layer;

Remove the second mask layer.

Optionally, the second mask layer is a photoresist layer.

Optionally, the conductive band film has two to four layers.

Optionally, the conduction band film is made of Cr, Ni, Cu or Au, and the materials of two adjacent conduction band films are different.

Optionally, the substrate is made of ceramic or ceramics; the resistive film is made of nickel-chromium or chromium-silicon.

A second aspect of the present invention provides a resistor structure, which is manufactured by using any of the above manufacturing methods.

Compared with the existing technology, the technical solution provided by the present invention has the following advantages:

The resistance structure and its manufacturing method provided by the invention first etch the multi-layer conduction band film on the surface of the product to be etched, retain the conduction band film to be formed into the conduction band and the entire resistance film, and then etch the resistance film. The resistive film to be formed into a resistor is retained to ultimately form the desired resistive structure. Compared with the manufacturing methods in the prior art, the manufacturing method of the resistance structure provided by the present invention reduces the number of corrosions and shortens the time that the side walls of the conduction band film and the resistance film are exposed to the corrosive liquid, thereby effectively improving the resistance. The erosion phenomenon of the film pattern solves the problem of uneven edges of the resistor film lines and improves the performance of the final resistor structure, thereby meeting the requirements of precision resistors.

Moreover, since the number of etching times is reduced, but the time to etch the single-layer conduction band film and the resistor film remains unchanged, the overall etching time is greatly shortened, thereby improving the processing efficiency of the resistor structure.

Description of the drawings

In order to explain the embodiments of the present invention or the technical solutions in the prior art more clearly, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings in the following description are only These are embodiments of the present invention. For those of ordinary skill in the art, other drawings can be obtained based on the provided drawings without exerting creative efforts.

1 to 4 are structural schematic diagrams of the manufacturing method of the resistor structure in the prior art;

Figure 5 is a flow chart of a method for manufacturing a resistor structure according to an embodiment of the present invention;

6 to 12 are structural schematic diagrams of a method for manufacturing a resistor structure according to an embodiment of the present invention;

Figure 13 is a schematic structural diagram of a three-layer conductive band film provided by another embodiment of the present invention;

Figure 14 is a schematic structural diagram of a two-layer conductive band film provided by another embodiment of the present invention.

Detailed ways

As mentioned in the background art, the resistive film pattern etched by the existing method has a relatively serious erosion phenomenon, resulting in irregular edges of the resistive film lines. The inventor's research found that the main reasons for this problem are (1) the concentration of the corrosive liquid is relatively high and (2) when a certain film is corroded, the side walls of other films will inevitably be exposed to the corrosive liquid. , that is, the side walls of the conductive band film and the resistance film are exposed to the corrosive liquid for a long time. Reducing the concentration of the corrosive liquid will inevitably lead to a reduction in corrosion efficiency and affect the corrosion effect; simply shortening the corrosion time will lead to corrosion residues, which will also affect the corrosion effect. In addition, adding a protective layer outside the side walls of the conduction band film and the resistance film is very difficult to process and is difficult to implement in actual production.

Based on this, the present invention provides a resistance structure and a manufacturing method thereof. By adjusting the corrosion sequence to reduce the number of corrosions, thereby shortening the time that the side walls of the conductive band film and the resistance film are in contact with the corrosive liquid, to overcome the above-mentioned problems existing in the prior art. Questions, specifically include:

An article to be etched is provided. The article to be etched includes a substrate and a resistive film and a multi-layer conductive band film located sequentially on the top surface of the substrate, wherein the article to be etched has a first region to be formed with a conductive band and a resistor to be formed. the second area;

Selectively etch the multi-layer conduction band film to retain the conduction band film in the first area and remove the conduction band film in other areas;

The resistive film is selectively etched to retain the resistive film in the second area and remove the resistive film in other areas to form the required resistance structure.

The manufacturing method of the resistor structure provided by the present invention first etches the multi-layer conduction band film on the surface of the product to be etched, retains the conduction band film in the first area where the conduction band is to be formed and the entire resistance film, and then etches the resistance film. Erosion, retaining the resistive film in the second area where the resistor is to be formed, and finally forming the desired resistive structure. Compared with the manufacturing methods in the prior art, the manufacturing method of the resistance structure provided by the present invention reduces the number of corrosions, effectively shortens the time that the side walls of the conductive band film and the resistance film are exposed to the corrosive liquid, thereby improving the resistance. The erosion phenomenon of the film pattern makes the edges of the resistive film lines in the final resistor structure more orderly, thereby meeting the requirements of precision resistors.

The above is the core idea of the present invention. In order to make the above purposes, features and advantages of the present invention more obvious and easy to understand, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. describe. Obviously, the described embodiments are only some of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts fall within the scope of protection of the present invention.

An embodiment of the present invention provides a method for manufacturing a resistor structure, as shown in Figure 5, including:

S101: Provide an article to be etched. The article to be etched includes a substrate and a resistive film and a multi-layer conductive band film located on the top surface of the substrate in sequence. The article to be etched has a first area to be formed with a conductive band and a resistor to be formed. the second area;

As shown in FIG. 6 , the article to be etched includes a substrate 20 and a resistive film 21 and at least two conductive band films located on the top surface of the substrate 20 in sequence. FIG. 7 is a top view of the article to be etched shown in FIG. 6 . As shown in FIG. 7 , the article to be etched includes a first region S1 where a conductive band is to be formed and a second region S2 where a resistor is to be formed. Specifically, the conduction band film has a first region S1 where a conduction band is to be formed, and the resistance film 21 has a second region S2 where a resistance is to be formed. Further, the orthographic projection of the first region S1 on the substrate 20 is located within the orthographic projection of the second region S2 on the substrate 20 . In the embodiment of the present invention, the second area S2 and the first area S1 are square areas as an example for description, but the invention is not limited thereto.

In this embodiment, the article to be etched has four conductive band films, as shown in Figure 6. In order from bottom to top, they are the first conductive band film 22, the second conductive band film 23, the third conductive band film 23, and the conductive band film 22. The first layer of conductive band film 24 and the fourth layer of conductive band film 25.

Optionally, the substrate 20 is a hybrid integrated circuit substrate material such as a ceramic substrate or crystallized glass, and the resistance film 21 and the conductive band film are both made of metal materials. Among them, the resistance film 21 can be nickel-chromium or chromium-silicon, and the conduction band film can be Cr, Ni, Cu or Au, where the materials of two adjacent conduction band films are different. Specifically, appropriate metal materials can be selected according to actual functional needs.

S102: Selectively etch the multi-layer conduction band film, retain the conduction band film in the first area, and remove the conduction band film in other areas;

In some embodiments of the present invention, selective etching of multi-layer conduction band films includes:

Forming a first mask layer on the top surface of the product to be etched, the first mask layer covers the conduction band film in the first area and exposes the conduction band film in other areas;

Etching the multi-layer conduction band films sequentially from top to bottom to expose the resistive film not covered by the first mask layer;

Remove the first mask layer.

As shown in FIG. 8 , a first mask layer 26 is formed on the surface of the product to be etched. The first mask layer 26 covers the conduction band film in the first area where the conduction band is to be formed, and exposes the conduction band film in other areas. Optionally, the first mask layer 26 is a photoresist layer. The process of forming the first mask layer 26 on the surface of the product to be etched includes: using coating and other processes to form a photoresist layer on the surface of the product to be etched, and then using processes such as exposure and development to remove the remaining photoresist layer. A conduction band film covering the first area where the conduction band is to be formed.

After the first mask layer 26 is formed on the product to be etched, the multi-layer conduction band films are sequentially etched in order from top to bottom (that is, from top to bottom in Figure 8). As shown in Figure 9, the product to be etched is The fourth layer of conduction band film 25, the third layer of conduction band film 24, the second layer of conduction band film 23 and the first layer of conduction band film 22 on the surface are etched respectively, leaving the four layers of conduction band film in the first area and all areas resistive film 21. Afterwards, the first mask layer 26 is removed.

S103: Selectively etch the resistance film, retain the resistance film in the second area, and remove the resistance film in other areas to form the required resistance structure.

In some embodiments of the present invention, selective etching of the resistive film includes:

A second mask layer is formed on the surface of the product to be etched, and the second mask layer covers the conduction band film in the first area and the resistance film in the second area, exposing the resistance film in other areas;

Etching the resistive film not covered by the second mask layer;

Remove the second mask layer.

As shown in Figure 10, after removing the first mask layer 26, a second mask layer 27 is formed on the surface of the product to be etched. The second mask layer 27 covers the four conduction band films retained in step S102 and the resistor to be formed. The resistive film 21 in the second area.

Optionally, the second mask layer 27 is a photoresist layer. The step of forming the second mask layer 27 on the surface of the article to be etched includes covering the surface of the article to be etched with photoresist, and then exposing and developing it to retain the surface of the conduction band film located in the first area and the second area. photoresist on the surface of the resistive film 21. Afterwards, as shown in FIG. 11 , the resistive film 21 is etched to remove the resistive film 21 exposed by the second mask layer 27 , leaving the resistive film 21 in the second region where the resistance is to be formed and the four conductive layers in the first region. With film. Afterwards, the second mask layer 27 is removed to form a resistor structure as shown in FIG. 12 .

It should be noted that in some embodiments of the present invention, sequential etching of multiple layers of conductive band films includes: sequentially immersing the products to be etched covered by the first mask layer into an etching solution corresponding to the conductive band films to be etched. , to etch the current conduction band film to be etched.

In some embodiments of the present invention, the article to be etched includes four layers of conductive band films, namely the first layer of conductive band film 22 to the fourth layer of conductive band film 25, and the first layer of conductive band film 22 to the fourth layer of conductive band film. 25 are located on the surface of the resistive film 21 in sequence, then the multi-layer conductive band films on the surface of the product to be etched are sequentially etched, including:

The article to be etched is immersed in an etching solution corresponding to the material of the fourth conductive band film 25 to etch the fourth conductive band film 25 and expose the third conductive layer not covered by the first mask layer 26 with film 24;

The article to be etched is immersed in an etching solution corresponding to the material of the third conductive band film 24 to etch the third conductive band film 24 and expose the second conductive layer not covered by the first mask layer 26 with film 23;

The article to be etched is immersed in an etching solution corresponding to the material of the second conductive band film 23 to etch the second conductive band film 23 and expose the first conductive layer not covered by the first mask layer 26 With film 22;

The article to be etched is immersed in an etching solution corresponding to the material of the first conductive band film 22 to etch the first conductive band film 22 and expose the resistive film 21 not covered by the first mask layer 26 .

In the embodiment of the present invention, taking four layers of conductive band films as an example, the product to be etched only needs to be etched five times, that is, the first conductive band film 22 to the fourth conductive band film 25 and the resistance film 21 are etched respectively. According to the manufacturing method in the prior art, the conductive band films 11, 12, 13 and 14 are first etched four times, and then the conductive band films 11, 12, 13 and 14 and the resistance film 15 are corroded five times, in total. 9 corrosion. Therefore, compared with the prior art, the manufacturing method provided by the embodiment of the present invention greatly reduces the number of etching times, which also significantly shortens the time that the side walls of the conductive band film and the resistance film 21 are exposed to the corrosive liquid, thereby improving the resistance. The erosion phenomenon of film graphics improves the accuracy of lines. In addition, since the number of corrosions is significantly reduced, processing efficiency is improved and time costs are reduced.

In other embodiments of the present invention, as shown in FIG. 13 , the conductive band film may also have three layers. In order from bottom to top, they are the first layer of conductive band film 22a to the third layer of conductive band film 24a. Then the multi-layer conduction band film on the surface of the product to be etched is etched in sequence, including:

The article to be etched is immersed in an etching solution corresponding to the material of the third conductive band film 24a to etch the third conductive band film 24a and expose the second conductive layer not covered by the first mask layer 26. With film 23a;

The article to be etched is immersed in an etching solution corresponding to the material of the second conductive band film 23a to etch the second conductive band film 23a and expose the first conductive layer not covered by the first mask layer 26. With film 22a;

The article to be etched is immersed in an etching solution corresponding to the material of the first conductive band film 22a to etch the first conductive band film 22a and expose the resistive film 21 not covered by the first mask layer 26.

In this embodiment, the product to be etched only needs to be etched four times, that is, the first conduction band film 22a to the third conduction band film 24a and the resistance film 21 are etched respectively; while for the products to be etched with the same structure Products, if using existing technology, require 7 corrosion times. Correspondingly, by adopting the manufacturing method of this embodiment, the time that the conductive band film and the resistance film 21 are exposed to the corrosive liquid can be shortened, the erosion phenomenon can be avoided, and the accuracy of the lines can be improved.

In other embodiments of the present invention, as shown in Figure 14, the conductive band film can also be composed of two layers, namely a first conductive band film 22b and a second conductive band film 23b. The first conductive band film 22b is located on Between the second conductive band film 23b and the resistive film 21, the multi-layer conductive band films on the surface of the product to be etched are sequentially etched, including:

The article to be etched is immersed in an etching solution corresponding to the material of the second conductive band film 23b to etch the second conductive band film 23b and expose the first conductive layer not covered by the first mask layer 26. With film 22b;

The article to be etched is immersed in an etching solution corresponding to the material of the first conductive band film 22 b to etch the first conductive band film 22 b and expose the resistive film 21 not covered by the first mask layer 26 .

In this embodiment, the product to be etched only needs to be etched three times, that is, the first layer of conductive band film 22b, the second layer of conductive band film 23b and the resistance film 21 are etched respectively; while for the product to be etched with the same structure Products, if using existing technology, require 5 corrosion times. Correspondingly, by adopting the manufacturing method of this embodiment, the time during which the side walls of the conductive band film and the resistance film 21 are exposed to the corrosive liquid can be shortened, the erosion phenomenon can be avoided, and the accuracy of the lines can be improved.

In the embodiment of the present invention, the multi-layer conduction band film may also be more layers of conduction band film, which will not be described in detail here. Using the manufacturing method provided by the embodiment of the present invention, the number of etching times is n+1, where n is the number of layers of the conductive band film; and according to the existing technology, the number of etching times is 2n+1. Therefore, according to the manufacturing method of the embodiment of the present invention, the number of corrosion times is reduced by n times. That is to say, the more layers of the conductive band film, the more the number of corrosion times is reduced, which can correspondingly shorten the time that the side walls of the conductive band film and the resistance film 21 are in contact with the corrosive liquid, avoid the phenomenon of erosion, and improve Line precision.

Embodiments of the present invention also provide a resistance structure, which is manufactured by using the manufacturing method provided in any of the above embodiments.

In some embodiments of the present invention, as shown in Figure 11, the resistance structure includes a substrate 20, a resistance film 21 and a multi-layer conduction band film located on the surface of the substrate 20 in sequence, wherein the resistance film 21 is located in the second area, and the conduction band film Located in the first area, the multi-layer conductive film forms the electrode of the resistive film 21 to realize the electrical connection between the resistive film 21 and the external circuit.

In the structure shown in Figure 11, the multi-layer conductive film only includes four conductive films, namely the first conductive film 22, the second conductive film 23, the third conductive film 24 and the fourth conductive film. The conductive band film 25 will be described as an example, but the invention is not limited to this. In other embodiments, as shown in Figure 13, the multi-layer conductive tape film can also include three layers of conductive tape films; as shown in Figure 14, the multi-layer conductive tape film can also include two layers of conductive tape films, which will not be repeated here. Let’s go over them one by one.

In the resistance structure and its manufacturing method provided by the present invention, the multi-layer conduction band film on the surface of the product to be etched is first etched, the conduction band film and the resistance film in the first area to be formed into the conduction band are retained, and then the resistance film is etched. Etching, retaining the resistive film in the second area where the resistor is to be formed, and finally forming the required resistive structure. Compared with the manufacturing methods in the prior art, the manufacturing method of the resistive structure provided by the present invention reduces the number of etching times and shortens the time of etching. It shortens the contact time between the conductive band film and the side wall of the resistive film and the corrosive liquid, improves the erosion phenomenon of the resistive film pattern, solves the problem of uneven edges of the resistive film lines, and improves the performance of the final resistive structure. Can meet the requirements of precision resistors.

Each embodiment in this specification is described in a progressive manner. Each embodiment focuses on its differences from other embodiments. The same and similar parts between the various embodiments can be referred to each other. The above description of the disclosed embodiments enables those skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be practiced in other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (9)

1. A method of manufacturing a resistor structure, characterized by comprising: An article to be etched is provided. The article to be etched includes a substrate and a resistive film and a multi-layer conductive band film located on the top surface of the substrate in sequence. In the article to be etched, the conductive band film has a corresponding A first region forming a conduction band, the resistive film having a second region corresponding to the formation of resistance, the orthographic projection of the first region on the substrate being located within the orthographic projection of the second region on the substrate; Selectively etching the multi-layer conduction band film to retain the conduction band film in the first region and remove the conduction band film in other regions; Selectively etch the resistive film, retain the resistive film in the second region, and remove the resistive film in other regions to form the required resistive structure; Wherein, selective etching of the multi-layer conduction band film includes: Forming a first mask layer on the top surface of the article to be etched, the first mask layer covering the conduction band film in the first area and exposing the conduction band film in other areas; Etching the multi-layer conductive band film sequentially from top to bottom until the resistive film not covered by the first mask layer is exposed; Remove the first mask layer. 2. The manufacturing method according to claim 1, characterized in that sequentially etching the multi-layer conductive band films includes: The article to be etched covered by the first mask layer is sequentially immersed in an etching liquid corresponding to the conductive band film to be etched, and the current conductive band film to be etched is etched. 3. The manufacturing method according to claim 1 or 2, characterized in that the first mask layer is a photoresist layer. 4. The manufacturing method according to claim 1, characterized in that selective etching of the resistive film includes: A second mask layer is formed on the surface of the article to be etched, and the second mask layer covers the conduction band film in the first area and the resistance film in the second area, exposing the resistance films in other areas; Etching the resistive film not covered by the second mask layer; Remove the second mask layer. 5. The manufacturing method according to claim 4, wherein the second mask layer is a photoresist layer. 6. The manufacturing method according to claim 1 or 2, characterized in that the conductive band film has two to four layers. 7. The manufacturing method according to claim 6, wherein the conduction band film is made of Cr, Ni, Cu or Au, and the materials of two adjacent conduction band films are different. 8. The production method according to any one of claims 1-2 and 4-5, characterized in that the material of the substrate is ceramic or crystallized glass; the resistive film is made of nickel-chromium or chromium-silicon. 9. A resistance structure, characterized in that it is produced by the manufacturing method according to any one of claims 1-8.