CN112186103B - Resistor structure and manufacturing method thereof - Google Patents
Resistor structure and manufacturing method thereof Download PDFInfo
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- CN112186103B CN112186103B CN202011085858.4A CN202011085858A CN112186103B CN 112186103 B CN112186103 B CN 112186103B CN 202011085858 A CN202011085858 A CN 202011085858A CN 112186103 B CN112186103 B CN 112186103B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000007788 liquid Substances 0.000 claims abstract description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 13
- 229910018487 Ni—Cr Inorganic materials 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical group [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 claims description 3
- DYRBFMPPJATHRF-UHFFFAOYSA-N chromium silicon Chemical compound [Si].[Cr] DYRBFMPPJATHRF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000002241 glass-ceramic Substances 0.000 claims description 2
- 238000005260 corrosion Methods 0.000 abstract description 14
- 230000007797 corrosion Effects 0.000 abstract description 14
- 239000010410 layer Substances 0.000 description 86
- 230000008569 process Effects 0.000 description 4
- 230000001788 irregular Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000004904 shortening Methods 0.000 description 2
- 238000000576 coating method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
The invention provides a resistor structure and a manufacturing method thereof, comprising the following steps: providing a product to be etched, wherein the product to be etched comprises a substrate, a resistor film and a multi-layer conduction band film which are sequentially positioned on the top surface of the substrate, and the product to be etched is provided with a first area where a conduction band is to be formed and a second area where a resistor is to be formed; selectively etching the multi-layer conduction band film, reserving the conduction band film of the first area, and removing the conduction band films of other areas; and selectively etching the resistance film, reserving the resistance film in the second area, and removing the resistance film in other areas to form a required resistance structure. Compared with the manufacturing method in the prior art, the method provided by the invention reduces the corrosion times and shortens the time of exposing the resistance film and the conduction band film to the corrosive liquid, thereby improving the undercut phenomenon of the resistance film pattern.
Description
Technical Field
The invention relates to the technical field of manufacturing of hybrid integrated circuit chips, in particular to a resistor structure and a manufacturing method thereof.
Background
Along with the continuous improvement of the integration degree of electronic products, the precision of the resistance film on the chip is also higher and higher. In order to produce a resistor with a large resistance value in a small area, it is necessary to produce a resistor film with a thin line.
Fig. 1 to 4 show a method of manufacturing a slim resistor, which is currently in common use. As shown in fig. 1, a first photoresist layer 10 serving as a mask is formed on the surface of an article to be etched, and the first photoresist layer 10 covers a region where a conduction band is to be formed and a region where a resistor is to be formed; then sequentially etching the multilayer conduction band film (taking four conduction band films as an example, respectively taking 11-14 as a distinction from top to bottom) and the resistor film 15 exposed by the first photoresist layer 10, wherein the etched structure is shown in fig. 2; thereafter, the first photoresist layer 10 is removed, and a second photoresist layer 16 is formed as a mask, as shown in fig. 3, the second photoresist layer 16 covers the region where the conduction band is to be formed, and then the conduction band films 11, 12, 13 and 14 are sequentially etched to form the structure shown in fig. 4.
However, the process is easy to cause serious undercut phenomenon, so that the line edges of the resistor film patterns are not uniform, and the difference between the line edges and the designed resistor film patterns is large, so that the requirement of precise resistance is difficult to meet.
Disclosure of Invention
In view of this, the present invention provides a resistor structure and a method for manufacturing the same, so as to improve undercut phenomenon and solve the problem of irregular line edges of the resistor film pattern.
In order to achieve the above purpose, the present invention provides the following technical solutions:
a first aspect of the present invention provides a method for manufacturing a resistor structure, including:
providing a product to be etched, wherein the product to be etched comprises a substrate, and a resistor film and a multi-layer conduction band film which are sequentially arranged on the top surface of the substrate, and the product to be etched is provided with a first area where a conduction band is to be formed and a second area where a resistor is to be formed;
selectively etching the multi-layer conduction band film, reserving the conduction band film of the first area, and removing the conduction band films of other areas;
and selectively etching the resistance film, reserving the resistance film in the second area, and removing the resistance film in other areas to form a required resistance structure.
Optionally, selectively etching the multilayer conduction band film includes:
forming a first mask layer on the top surface of the product to be etched, wherein the first mask layer covers the conduction band film of the first area and exposes the conduction band film of other areas;
sequentially etching the multi-layer conduction band films from top to bottom until the resistor film uncovered by the first mask layer is exposed;
and removing the first mask layer.
Optionally, sequentially etching the multilayer conduction band film, including:
and sequentially immersing the product to be etched covered by the first mask layer into etching liquid corresponding to the conduction band film to be etched, and etching the current conduction band film to be etched.
Optionally, the first mask layer is a photoresist layer.
Optionally, selectively etching the resistive film includes:
forming a second mask layer on the surface of the product to be etched, wherein the second mask layer covers the conduction band film of the first area and the resistance film of the second area, and exposes the resistance films of other areas;
etching the resistance film which is not covered by the second mask layer;
and removing the second mask layer.
Optionally, the second mask layer is a photoresist layer.
Optionally, the conduction band film is two to four layers.
Optionally, the conduction band film is made of Cr, ni, cu or Au, and the materials of two adjacent conduction band films are different.
Optionally, the substrate is made of ceramic or microcrystalline glass; the resistance film is nickel-chromium or chromium-silicon.
A second aspect of the invention provides a resistor structure manufactured by a manufacturing method as described in any one of the preceding claims.
Compared with the prior art, the technical scheme provided by the invention has the following advantages:
according to the resistor structure and the manufacturing method thereof, firstly, the multi-layer conduction band film on the surface of a product to be etched is etched, the conduction band film to be formed into the conduction band and the whole resistor film are reserved, then, the resistor film to be formed into the resistor is etched, and finally, the required resistor structure is formed. Compared with the manufacturing method in the prior art, the manufacturing method of the resistor structure provided by the invention reduces the corrosion times, shortens the time for exposing the side walls of the conduction band film and the resistor film to the corrosive liquid, thereby effectively improving the undercut phenomenon of the resistor film pattern, solving the problem of irregular edges of the resistor film lines, improving the performance of the finally obtained resistor structure, and meeting the requirement of precise resistor.
In addition, the time for corroding the single-layer conduction band film and the resistor film is unchanged due to the reduction of the corrosion times, so that the overall corrosion time is greatly shortened, and the processing efficiency of the resistor structure is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
Fig. 1 to 4 are schematic structural views of a method for manufacturing a resistor structure in the prior art;
FIG. 5 is a flowchart of a method for fabricating a resistor structure according to an embodiment of the present invention;
fig. 6 to 12 are schematic structural diagrams of a method for manufacturing a resistor structure according to an embodiment of the present invention;
FIG. 13 is a schematic view of a three-layer tape guide film according to another embodiment of the present invention;
fig. 14 is a schematic structural diagram of a two-layer conduction band film according to another embodiment of the present invention.
Detailed Description
As described in the background art, the resistor film pattern corroded by the prior method has a serious undercut phenomenon, so that the edges of the resistor film lines are irregular. The inventors have found that the cause of such a problem is mainly (1) that the concentration of the etching liquid is high and (2) that the side walls of other films are inevitably exposed to the etching liquid when etching a certain layer of film, i.e., the side walls of the conduction band film and the resistive film are in contact with the etching liquid for a long period of time. The reduction of the concentration of the corrosive liquid inevitably leads to the reduction of the corrosion efficiency and influences the corrosion effect; the simple shortening of the etching time can lead to etching residues and also affect the etching effect. In addition, the protective layer is additionally arranged outside the side walls of the conduction band film and the resistor film, so that the technology difficulty is very high, and the technology is difficult to realize in actual production.
Based on this, the present invention provides a resistor structure and a method for manufacturing the same, which reduces the etching times by adjusting the etching sequence, thereby shortening the time for the side walls of the conduction band film and the resistor film to contact with the etching liquid, so as to overcome the above problems in the prior art, and specifically includes:
providing a product to be etched, wherein the product to be etched comprises a substrate, a resistor film and a multi-layer conduction band film which are sequentially arranged on the top surface of the substrate, and the product to be etched is provided with a first area for forming a conduction band and a second area for forming a resistor;
selectively etching the multi-layer conduction band film, reserving the conduction band film of the first area, and removing the conduction band films of other areas;
and selectively etching the resistance film, reserving the resistance film in the second area, and removing the resistance film in other areas to form a required resistance structure.
According to the manufacturing method of the resistor structure, firstly, the multi-layer conduction band film on the surface of the product to be etched is etched, the conduction band film of the first area to be formed into the conduction band and the whole resistor film are reserved, then, the resistor film is etched, the resistor film of the second area to be formed into the resistor is reserved, and finally the required resistor structure is formed. Compared with the manufacturing method in the prior art, the manufacturing method of the resistor structure provided by the invention reduces the corrosion times, effectively shortens the time of exposing the side walls of the conduction band film and the resistor film to corrosive liquid, improves the undercut phenomenon of the resistor film pattern, and enables the edges of the resistor film lines in the finally obtained resistor structure to be more neat, thereby meeting the requirement of precise resistor.
The foregoing is a core idea of the present invention, and in order to make the above objects, features and advantages of the present invention more obvious and understandable, a technical solution in the embodiment of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiment of the present invention. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The embodiment of the invention provides a manufacturing method of a resistor structure, as shown in fig. 5, comprising the following steps:
s101: providing a product to be etched, wherein the product to be etched comprises a substrate, a resistor film and a multi-layer conduction band film which are sequentially positioned on the top surface of the substrate, and the product to be etched is provided with a first area where a conduction band is to be formed and a second area where a resistor is to be formed;
as shown in fig. 6, the article to be etched includes a substrate 20, and a resistive film 21 and at least two conductive tape films sequentially disposed on the top surface of the substrate 20. Fig. 7 is a top view of the article to be etched shown in fig. 6. As shown in fig. 7, the article to be etched includes a first region S1 where a conduction band is to be formed and a second region S2 where a resistor is to be formed. Specifically, the conduction band film has a first region S1 where a conduction band is to be formed, and the resistive film 21 has a second region S2 where a resistance is to be formed. Further, the orthographic projection of the first region S1 onto the substrate 20 is located within the orthographic projection of the second region S2 onto the substrate 20. In the embodiment of the present invention, the second area S2 and the first area S1 are only square areas, but the present invention is not limited thereto.
In this embodiment, the article to be etched has four conduction band films, as shown in fig. 6, a first conduction band film 22, a second conduction band film 23, a third conduction band film 24, and a fourth conduction band film 25 are sequentially arranged from bottom to top.
Alternatively, the substrate 20 is a substrate material for a hybrid integrated circuit such as a ceramic substrate and glass ceramic, and the resistive film 21 and the conduction band film are both metal materials. The resistive film 21 may be nickel-chromium or chromium-silicon, and the conduction band film may be Cr, ni, cu or Au, wherein the materials of two adjacent conduction band films are different. In particular, a proper metal material can be selected according to actual functional requirements.
S102: selectively etching the multi-layer conduction band film, reserving the conduction band film of the first area, and removing the conduction band films of other areas;
in some embodiments of the present invention, selectively etching a multilayer conduction band film includes:
forming a first mask layer on the top surface of the product to be etched, wherein the first mask layer covers the conduction band film of the first area and exposes the conduction band film of other areas;
sequentially etching the multilayer conduction band films from top to bottom to expose the resistor film uncovered by the first mask layer;
and removing the first mask layer.
As shown in fig. 8, a first mask layer 26 is formed on the surface of the product to be etched, where the first mask layer 26 covers the conduction band film of the first region where the conduction band is to be formed and exposes the conduction band film of other regions. Optionally, the first mask layer 26 is a photoresist layer. The process of forming the first mask layer 26 on the surface of the article to be etched includes: and forming a photoresist layer on the surface of the product to be etched by adopting a coating process and the like, and then adopting a exposing process, a developing process and the like to enable the residual photoresist layer to cover the conduction band film of the first area of the conduction band to be formed.
After the first mask layer 26 is formed on the article to be etched, the multi-layer conduction band films are sequentially etched in the order from top to bottom (i.e., from top to bottom in fig. 8), and as shown in fig. 9, the fourth conduction band film 25, the third conduction band film 24, the second conduction band film 23 and the first conduction band film 22 on the surface of the article to be etched are respectively etched, so that the four conduction band films in the first region and the resistive film 21 in all regions are remained. Thereafter, the first mask layer 26 is removed.
S103: and selectively etching the resistance film, reserving the resistance film in the second area, and removing the resistance film in other areas to form a required resistance structure.
In some embodiments of the present invention, selectively etching the resistive film includes:
forming a second mask layer on the surface of the product to be etched, wherein the second mask layer covers the conduction band film of the first area and the resistance film of the second area, and exposes the resistance films of other areas;
etching the resistance film which is not covered by the second mask layer;
and removing the second mask layer.
As shown in fig. 10, after the first mask layer 26 is removed, a second mask layer 27 is formed on the surface of the product to be etched, and the second mask layer 27 covers the four conduction band films remaining in step S102 and the resistor film 21 of the second region where the resistor is to be formed.
Optionally, the second mask layer 27 is a photoresist layer. The step of forming the second mask layer 27 on the surface of the product to be etched includes covering the surface of the product to be etched with photoresist, exposing and developing the photoresist, and retaining the photoresist on the surface of the conduction band film in the first region and the surface of the resistive film 21 in the second region. Thereafter, as shown in fig. 11, the resistive film 21 is etched to remove the resistive film 21 exposed by the second mask layer 27, leaving the resistive film 21 of the second region where the resistor is to be formed and the four-layer conduction band film of the first region. Thereafter, the second mask layer 27 is removed, forming a resistive structure as shown in fig. 12.
In some embodiments of the present invention, the etching of the multilayer conduction band film sequentially includes: and sequentially immersing the product to be etched covered by the first mask layer into etching liquid corresponding to the conduction band film to be etched, and etching the current conduction band film to be etched.
In some embodiments of the present invention, the product to be etched includes four conduction band films, which are respectively a first conduction band film 22 to a fourth conduction band film 25, and the first conduction band film 22 to the fourth conduction band film 25 are sequentially located on the surface of the resistive film 21, and then sequentially etching the multi-layer conduction band film on the surface of the product to be etched includes:
immersing the product to be etched in an etching solution corresponding to the material of the fourth conduction band film 25 to etch the fourth conduction band film 25, and exposing the third conduction band film 24 which is not covered by the first mask layer 26;
immersing the product to be etched in an etching solution corresponding to the material of the third conduction band film 24 to etch the third conduction band film 24, and exposing the second conduction band film 23 which is not covered by the first mask layer 26;
immersing the product to be etched in an etching solution corresponding to the material of the second conduction band film 23 to etch the second conduction band film 23, so as to expose the first conduction band film 22 which is not covered by the first mask layer 26;
the article to be etched is immersed in an etching solution corresponding to the material of the first conduction band film 22 to etch the first conduction band film 22, exposing the resistive film 21 uncovered by the first mask layer 26.
In the embodiment of the invention, taking four layers of conduction band films as an example, only 5 times of corrosion are needed to be carried out on the product to be etched, namely the first layer of conduction band film 22 to the fourth layer of conduction band film 25 and the resistor film 21 are respectively corroded; according to the prior art method, the conduction band films 11, 12, 13 and 14 are etched 4 times, and then the conduction band films 11, 12, 13 and 14 and the resistor film 15 are etched 5 times, 9 times in total. Therefore, compared with the prior art, the manufacturing method provided by the embodiment of the invention greatly reduces the corrosion times, and obviously shortens the time of exposing the side walls of the conduction band film and the resistor film 21 to the corrosive liquid, thereby improving the undercut phenomenon of the resistor film pattern and improving the line precision. In addition, the corrosion times are obviously reduced, the processing efficiency is improved, and the time cost is reduced.
In other embodiments of the present invention, as shown in fig. 13, the tape guide films may be three layers, namely, the first tape guide film 22a to the third tape guide film 24a in the order from bottom to top, and then sequentially etching the multi-layer tape guide film on the surface of the product to be etched includes:
immersing the product to be etched in an etching solution corresponding to the material of the third conduction band film 24a to etch the third conduction band film 24a, so as to expose the second conduction band film 23a which is not covered by the first mask layer 26;
immersing the product to be etched in an etching solution corresponding to the material of the second conduction band film 23a to etch the second conduction band film 23a, so as to expose the first conduction band film 22a which is not covered by the first mask layer 26;
the article to be etched is immersed in an etching solution corresponding to the material of the first conduction band film 22a to etch the first conduction band film 22a, exposing the resistive film 21 not covered by the first mask layer 26.
In this embodiment, only 4 times of etching are required for the product to be etched, namely, the first to third conduction band films 22a to 24a and the resistive film 21 are etched respectively; whereas for the same structure of the article to be etched, 7 etches are required if the prior art is used. Accordingly, by adopting the manufacturing method of the embodiment, the time for exposing the conduction band film and the resistor film 21 to the corrosive liquid can be shortened, the undercut phenomenon can be avoided, and the line accuracy can be improved.
In other embodiments of the present invention, as shown in fig. 14, the conduction band film may further be two layers, namely, a first conduction band film 22b and a second conduction band film 23b, where the first conduction band film 22b is located between the second conduction band film 23b and the resistive film 21, and then sequentially etching the multiple conduction band films on the surface of the product to be etched includes:
immersing the product to be etched in an etching solution corresponding to the material of the second conduction band film 23b to etch the second conduction band film 23b, so as to expose the first conduction band film 22b which is not covered by the first mask layer 26;
the article to be etched is immersed in an etching solution corresponding to the material of the first conduction band film 22b to etch the first conduction band film 22b, exposing the resistive film 21 not covered by the first mask layer 26.
In this embodiment, only 3 times of etching are required for the product to be etched, namely, the first conduction band film 22b, the second conduction band film 23b and the resistive film 21 are etched respectively; whereas for the same structure of the article to be etched, if the prior art is used, 5 etches are required. Accordingly, by adopting the manufacturing method of the embodiment, the time for exposing the side walls of the conduction band film and the resistor film 21 to the corrosive liquid can be shortened, the undercut phenomenon can be avoided, and the line precision can be improved.
In the embodiment of the present invention, the multi-layer conduction band film may be a more multi-layer conduction band film, which is not described here. By adopting the manufacturing method provided by the embodiment of the invention, the corrosion times are n+1, wherein n is the number of layers of the conduction band film; whereas if according to the prior art the number of corrosions is 2n+1. Therefore, according to the manufacturing method of the embodiment of the invention, the corrosion times are reduced by n times. That is, the more the number of layers of the conduction band film is, the more the number of times of corrosion is reduced, so that the time for the side walls of the conduction band film and the resistor film 21 to contact with the corrosive liquid can be correspondingly shortened, the undercut phenomenon is avoided, and the line accuracy is improved.
The embodiment of the invention also provides a resistor structure which is manufactured by adopting the manufacturing method provided by any embodiment.
In some embodiments of the present invention, as shown in fig. 11, the resistive structure includes a substrate 20, and a resistive film 21 and a multi-layer conduction band film sequentially disposed on a surface of the substrate 20, where the resistive film 21 is disposed in the second area, the conduction band film is disposed in the first area, and the multi-layer conduction band film forms an electrode of the resistive film 21, so as to electrically connect the resistive film 21 with an external circuit.
In the structure shown in fig. 11, the multi-layer conduction band film is described by taking the example in which the four conduction band films, that is, the first conduction band film 22, the second conduction band film 23, the third conduction band film 24, and the fourth conduction band film 25, as examples, but not limited thereto. In other embodiments, as shown in fig. 13, the multilayer conduction band film may further include a three-layer conduction band film; as shown in fig. 14, the multi-layer tape guide film may further include two tape guide films, which are not described in detail herein.
According to the resistor structure and the manufacturing method thereof, the multi-layer conduction band film on the surface of the product to be etched is etched, the conduction band film and the resistor film in the first area of the conduction band to be formed are reserved, then the resistor film is etched, the resistor film in the second area of the resistor to be formed is reserved, and finally the required resistor structure is formed.
In the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described in a different point from other embodiments, and identical and similar parts between the embodiments are all enough to refer to each other. The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. A method of fabricating a resistor structure, comprising:
providing a product to be etched, wherein the product to be etched comprises a substrate, and a resistor film and a plurality of layers of conduction band films which are sequentially positioned on the top surface of the substrate, the conduction band film is provided with a first area corresponding to a conduction band, the resistor film is provided with a second area corresponding to a resistance, and the orthographic projection of the first area on the substrate is positioned in the orthographic projection of the second area on the substrate;
selectively etching the multilayer conduction band film, reserving the conduction band film of the first area, and removing conduction band films of other areas;
selectively etching the resistance film, reserving the resistance film of the second area, and removing the resistance films of other areas to form a required resistance structure;
and selectively etching the multilayer conduction band film, wherein the selectively etching the multilayer conduction band film comprises the following steps:
forming a first mask layer on the top surface of the product to be etched, wherein the first mask layer covers the conduction band film of the first area and exposes the conduction band film of other areas;
sequentially etching the multi-layer conduction band films from top to bottom until the resistor film uncovered by the first mask layer is exposed;
and removing the first mask layer.
2. The method of claim 1, wherein sequentially etching the multilayer conduction band film comprises:
and sequentially immersing the product to be etched covered by the first mask layer into etching liquid corresponding to the conduction band film to be etched, and etching the current conduction band film to be etched.
3. The method of claim 1 or 2, wherein the first mask layer is a photoresist layer.
4. The method of claim 1, wherein selectively etching the resistive film comprises:
forming a second mask layer on the surface of the product to be etched, wherein the second mask layer covers the conduction band film of the first area and the resistance film of the second area, and exposes the resistance films of other areas;
etching the resistance film which is not covered by the second mask layer;
and removing the second mask layer.
5. The method of claim 4, wherein the second mask layer is a photoresist layer.
6. The method of claim 1 or 2, wherein the tape is two to four layers.
7. The method of claim 6, wherein the conduction band films are Cr, ni, cu or Au, and the adjacent conduction band films are different in material.
8. The method according to any one of claims 1-2 and 4-5, wherein the substrate is made of ceramic or glass ceramics; the resistance film is nickel-chromium or chromium-silicon.
9. A resistor structure produced by the method of any one of claims 1 to 8.
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| CN112186103B true CN112186103B (en) | 2024-03-19 |
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| JPH04206505A (en) * | 1990-11-30 | 1992-07-28 | Hitachi Ltd | Formation of thin film resistance element |
| CN101998770A (en) * | 2009-08-17 | 2011-03-30 | 健鼎（无锡）电子有限公司 | Method for manufacturing etched film resistance circuit board manufacturing method |
| CN102117670A (en) * | 2009-10-29 | 2011-07-06 | 住友金属矿山株式会社 | Resistor material, sputtering target for forming resistive thin film, resistive thin film, thin film resistor and method of producing the same |
| CN103025057A (en) * | 2011-09-22 | 2013-04-03 | 日本特殊陶业株式会社 | Wiring substrate and method of manufacturing the same |
| CN107742607A (en) * | 2017-08-31 | 2018-02-27 | 重庆中科渝芯电子有限公司 | A kind of method that film resistor is made of ICP dry etchings |
| TWI705462B (en) * | 2019-12-18 | 2020-09-21 | 光頡科技股份有限公司 | Thin film resistor element and manufacturing method thereof |
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