CN112133772A - Solar cell and preparation method thereof - Google Patents
Solar cell and preparation method thereof Download PDFInfo
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- CN112133772A CN112133772A CN201910557025.4A CN201910557025A CN112133772A CN 112133772 A CN112133772 A CN 112133772A CN 201910557025 A CN201910557025 A CN 201910557025A CN 112133772 A CN112133772 A CN 112133772A
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- 238000002360 preparation method Methods 0.000 title abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 230000031700 light absorption Effects 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 19
- 238000002834 transmittance Methods 0.000 abstract description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 239000011521 glass Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000011787 zinc oxide Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000001755 magnetron sputter deposition Methods 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
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- Computer Hardware Design (AREA)
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Abstract
The invention discloses a solar cell and a preparation method thereof. The solar cell comprises a transparent substrate, a back electrode layer, a light absorption layer, a buffer layer, a high-resistance layer and a front electrode layer which are sequentially stacked, wherein a scribing line is arranged in the solar cell and comprises two first scribing lines, a second scribing line and a third scribing line which are sequentially arranged, the second scribing line is arranged on one surface, far away from the transparent substrate, of the buffer layer to the surface, far away from the transparent substrate, of the back electrode layer, the projection, far away from the transparent substrate, of the second scribing line on the back electrode layer covers the projection, far away from the transparent substrate, of the first scribing line on the back electrode layer, of the first scribing line, and the front high-resistance layer can be in contact with the back electrode layer. Compared with the prior art, the solar cell only comprises the light absorption layer, the buffer layer, the high-resistance layer and the front electrode on the transparent substrate at the second scribing line, so that the solar cell has certain light transmittance and can better meet the market application requirements.
Description
Technical Field
The invention relates to the technical field of solar energy, in particular to a solar cell and a preparation method thereof.
Background
In recent years, as the traditional energy problem is highlighted, new energy is rapidly developed, and especially, solar energy is taken as one of the energy sources which are seriously developed. The solar cell has the advantages of strong light absorption capacity, low manufacturing cost, flexibility, stable power generation, environmental friendliness and the like, and is one of the most possible materials for replacing silicon cells in the future. In the process of manufacturing the battery, in order to form different sub-batteries from the battery and realize series-parallel connection between the sub-batteries, at least three laser/mechanical scribing processes (named as first scribing, second scribing and third scribing according to the time sequence of scribing) are generally required.
The assembly prepared by the traditional three-time scribing process does not have light transmission at the scribing position, when the glass-based solar cell is used as a glass curtain wall of a building, the light transmission is an important limiting condition, the glass-based solar cell and normal light-transmitting glass are mixed and installed in the market for meeting the indoor lighting requirement, and if the glass-based solar cell has light transmission, the market requirement can be met more easily.
Disclosure of Invention
In order to solve the problem that the glass-based solar cell is not light-tight, the invention provides a solar cell and a preparation method thereof. The solar cell comprises a transparent substrate, a back electrode layer, a light absorbing layer, a buffer layer, a high-resistance layer and a front electrode layer which are sequentially stacked, wherein a scribing line is arranged in the solar cell and comprises two first scribing lines, a second scribing line and a third scribing line which are sequentially arranged, the first scribing line is arranged from the surface, far away from the transparent substrate, of the back electrode layer to the surface, close to the back electrode layer, of the transparent substrate, the second scribing line is arranged from the surface, far away from the transparent substrate, of the buffer layer to the surface, far away from the transparent substrate, of the back electrode layer, the projection, far away from the transparent substrate, of the second scribing line covers the projection, far away from the transparent substrate, of the first scribing line on the back electrode layer, the high-resistance layer can be in contact with the back electrode layer, and the third scribing line is arranged from the surface One side of the transparent substrate.
The method for preparing the solar cell comprises the following steps:
forming a back electrode layer on one side of a transparent substrate;
carrying out first scribing on the back electrode layer to form two first scribing lines;
sequentially preparing a light absorption layer and a buffer layer on the back electrode layer;
carrying out second scribing on the buffer layer, so that the projection of a formed second scribing line on one surface of the back electrode layer far away from the transparent substrate covers the projection of a second first scribing line on one surface of the back electrode layer far away from the transparent substrate, and the back electrode layer is partially exposed;
sequentially preparing a high-resistance layer and a front electrode layer on the buffer layer and the second scribing line;
and scribing for the third time on the front electrode layer to form a third scribing line.
Compared with the prior art, the projection of the second scribing line of the solar cell on the side, far away from the transparent substrate, of the back electrode layer covers the projection of the second scribing line of the first scribing line on the side, far away from the transparent substrate, of the back electrode layer, so that the back electrode layer of the cell is ensured to be conductive, and meanwhile, only the light absorption layer, the buffer layer, the high-resistance layer and the front electrode layer are arranged on the transparent substrate at the second scribing line.
Drawings
The accompanying drawings are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the example serve to explain the principles of the invention and not to limit the invention.
Fig. 1 is a schematic structural diagram of a solar cell according to an embodiment of the present invention;
fig. 2 is a flowchart illustrating a method for manufacturing a solar cell according to an embodiment of the invention.
Reference numerals: 00-transparent substrate, 01-back electrode layer, 02-light absorption layer, 03-buffer layer, 04-high resistance layer, 05-front electrode layer, 21-first scribing line, 22-second scribing line, and 23-third scribing line.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention without any inventive step, are within the scope of protection of the invention.
As shown in fig. 1, a solar cell structure in an embodiment of the invention is shown in fig. 1. As can be seen from fig. 1, the solar cell includes a transparent substrate 00, a back electrode layer 01, a light absorbing layer 02, a buffer layer 03, a high resistance layer 04, and a front electrode layer 05, which are sequentially stacked, a scribing line is provided in the solar cell, the scribing line includes two first scribing lines 21, second scribing lines 22, and third scribing lines 23, which are sequentially provided, the first scribing line 21 is opened from a surface of the back electrode layer 01 away from the transparent substrate 00 to a surface of the transparent substrate 00 close to the back electrode layer 01, the second scribing line 22 is opened from a surface of the buffer layer 03 away from the transparent substrate 00 to a surface of the back electrode layer 01 away from the transparent substrate 00, a projection of the second scribing line 22 on the surface of the back electrode layer 01 away from the transparent substrate 00 covers a projection of the first scribing line 21 on the surface of the back electrode layer 01 away from the transparent substrate 00, the front high-resistance layer 04 can be in contact with the back electrode layer 01, and the third scribe line 23 is opened from the surface of the front electrode layer 05 away from the transparent substrate 00 to the surface of the back electrode layer 01 away from the transparent substrate 00.
Specifically, the material of the transparent substrate 00 may be glass or a transparent plastic material. The material of the back electrode layer 01 may be molybdenum or tungsten, and optionally, the thickness of the back electrode layer 01 is 300nm to 500nm, such as 300nm, 350nm, 400nm, 450nm, or 500 nm. The material of the light absorbing layer 02 is copper indium gallium selenide or cadmium telluride, and optionally, the thickness of the light absorbing layer 02 is 1 μm to 3 μm, for example, 2 μm. The buffer layer 03 is made of cadmium sulfide or zinc sulfide, and optionally, the thickness of the buffer layer 03 is 20nm-60nm, for example, 40 nm. The material of the high-resistance layer 04 is intrinsic zinc oxide or zinc magnesium oxide, and optionally, the thickness of the high-resistance layer 04 is 20nm to 60nm, for example, 40 nm. The material of the front electrode layer 05 is aluminum-doped zinc oxide, boron-doped zinc oxide, or indium-doped tin oxide, and optionally, the thickness of the front electrode layer 05 is 100nm to 500nm, for example, 200 nm.
The scribing lines are in multiple groups, and the multiple groups of scribing lines are arranged at intervals. Each group of scribe lines includes two first scribe lines 21, second scribe lines 22, and third scribe lines 23 arranged in this order. The first scribing lines 21 are opened from the surface of the back electrode layer 01 far away from the transparent substrate 00 to the surface of the transparent substrate 00 near to the back electrode layer 01, that is, the first scribing lines 21 penetrate through the back electrode layer 01, and the plurality of first scribing lines 21 are parallel and covered with the light absorption layer 02 to divide the solar cell into a plurality of mutually insulated cell units. Optionally, the width of the first scribing line 21 is 30 μm to 50 μm, and the distance between two first scribing lines 21 is 90 μm to 140 μm.
The second scribing line 22 is opened from the surface of the buffer layer 03 far from the transparent substrate 00 to the surface of the back electrode layer 01 far from the transparent substrate 00, the projection of the second scribing line 22 on the surface of the back electrode layer 01 far from the transparent substrate 00 covers the projection of the second scribing line 21 on the surface of the back electrode layer 01 far from the transparent substrate 00, and the front high-resistance layer 04 can be in contact with the back electrode layer 01, namely when the second scribing line 22 is prepared, the back electrode layer 01 is partially exposed, so that a connecting channel of the back electrode layer 01 and the front electrode 05 is formed in adjacent battery units. Alternatively, the width of the second scribing line 22 is 60 μm to 80 μm.
The second scribing line 22 is provided near the second first scribing line 21, so that only the light absorbing layer, the buffer layer, the high resistance layer and the front electrode layer are provided on the transparent substrate 00 at the second scribing line, and the solar cell has light transmittance due to the small thickness and certain light transmittance of the film, thereby better meeting the market application requirements.
The third scribe line 22 extends from the surface of the front electrode layer 05 away from the transparent substrate 00 to the surface of the back electrode layer 01 away from the transparent substrate 00. The third scribing line 22 separates the front electrode layers of the adjacent battery cells, thereby achieving the division of the adjacent battery cells. Optionally, the distance between the third scribing line 23 and the first scribing line 21 is 240 μm to 300 μm.
An embodiment of the present invention further provides a method for manufacturing the solar cell shown in fig. 1, and as shown in fig. 2, the method includes:
step 01: a back electrode layer 01 is formed on one side of the transparent substrate 00.
Specifically, the material of the transparent substrate 00 may be glass, transparent plastic, or the like. A back electrode layer with a thickness of 300nm-500nm, such as a molybdenum back electrode layer or a tungsten back electrode layer, can be plated on one side of the substrate by a magnetron sputtering method.
Step 02: first scribing is performed on the back electrode layer 01 to form two first scribing lines 21.
Specifically, a plurality of groups of first scribing lines 21 are scribed on the back electrode layer by a laser scribing method or a mechanical scribing method, so that the first scribing lines 21 penetrate through the back electrode layer 01. Each set of the first scribing lines 21 includes two. Optionally, the distance between the two first scribes 21 is 90 μm to 140 μm, and the width of each first scribe is 10 μm to 100 μm.
And step 03, sequentially preparing a light absorbing layer 02 and a buffer layer 03 on the back electrode layer 01.
Specifically, the light absorbing layer is copper indium gallium selenide or cadmium telluride, the light absorbing layer 02 is prepared on the back electrode layer 01 and in the first scribing line 21 through a co-evaporation method or a sputtering method, and the thickness of the light absorbing layer 02 is 1 μm-3 μm.
The buffer layer is prepared by a chemical water bath method, specifically, the buffer layer is cadmium sulfide or zinc sulfide, and the thickness of the buffer layer is 20nm-60 nm.
Step 04: and performing second scribing on the buffer layer 03, so that the projection of the formed second scribing line 22 on the side, away from the transparent substrate 00, of the back electrode layer 01 covers the projection of the second scribing line 21 on the side, away from the transparent substrate 00, of the back electrode layer 01, and the back electrode layer 01 is partially exposed.
Specifically, a plurality of groups of second scribing lines 22 can be scribed in parallel by a laser scribing method or a mechanical scribing method, the projection of the second scribing line 22 on one side of the back electrode layer 01, which is far away from the transparent substrate 00, covers the projection of the second scribing line 21 on one side of the back electrode layer 01, which is far away from the transparent substrate 00, and the front high resistance layer 04 can be in contact with the back electrode layer 01, that is, when the second scribing line 22 is prepared, the back electrode layer 01 is partially exposed, so that a connecting channel between the back electrode layer 01 and the front electrode 05 is formed in adjacent battery cells. Alternatively, the width of the second scribing line 22 is 60 μm to 80 μm.
Step 05: a high resistance layer 04 and a front electrode layer 05 are sequentially formed on the buffer layer 03 and the second scribe line 22.
The high-resistance layer 04 can be prepared on the buffer layer through a magnetron sputtering method, specifically, the high-resistance layer 04 is intrinsic zinc oxide or zinc magnesium oxide, and the thickness of the high-resistance layer 04 is 20nm-60 nm.
The front electrode layer 05 is prepared on the high-resistance layer 04 through a magnetron sputtering method, and specifically, the front electrode layer 05 is aluminum-doped zinc oxide, boron-doped zinc oxide or indium-doped tin oxide. Optionally, the thickness of the front electrode layer 05 is 100nm to 500 nm.
Step 06: forming a third scribing line 23 by scribing a third time on the front electrode layer 05
A plurality of third scribe lines 23 (one second scribe line corresponds to one third scribe line) are scribed in parallel beside each second scribe line 22 (on the side away from the first scribe line 21) by a laser scribing method or a mechanical scribing method, and the third scribe lines 23 are opened from the side of the front electrode layer 05 away from the transparent substrate 00 to the side of the back electrode layer 01 away from the transparent substrate 00. Specifically, the distance between the third scribing line 23 and the first scribing line 21 is 240 μm to 300 μm. Alternatively, the third scribe line 23 has a width of 40 μm to 60 μm.
Compared with the prior art, the solar cell provided by the invention has the following advantages:
in the prior art, the projection of the second scribing line of the solar cell on the side of the back electrode layer far from the transparent substrate covers the projection of the second scribing line of the first scribing line on the side of the back electrode layer far from the transparent substrate, so that the back electrode layer of the cell is ensured to be conductive, and meanwhile, the transparent substrate at the second scribing line is only provided with the light absorbing layer, the buffer layer, the high-resistance layer and the front electrode layer.
It is to be understood that the use of "upper," "lower," "first side," "second side" herein is merely for convenience in describing the invention and for simplicity in description, and is not intended to indicate or imply that the referenced device or element must be in a particular orientation, constructed and operated in a particular orientation, and is therefore not to be considered limiting.
Although the embodiments of the present invention have been described above, the above description is only for the convenience of understanding the present invention, and is not intended to limit the present invention. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. The solar cell is characterized by comprising a transparent substrate (00), a back electrode layer (01), a light absorption layer (02), a buffer layer (03), a high-resistance layer (04) and a front electrode layer (05) which are sequentially stacked, wherein a scribing line is arranged in the solar cell and comprises two first scribing lines (21), a second scribing line (22) and a third scribing line (23) which are sequentially arranged, the first scribing line (21) is arranged from one surface, away from the transparent substrate (00), of the back electrode layer (01) to one surface, close to the back electrode layer (01), of the transparent substrate (00), the second scribing line (22) is arranged from one surface, away from the transparent substrate (00), of the buffer layer (03) to one surface, away from the transparent substrate (00), of the back electrode layer (01), and the projection of the second scribing line (22) on the surface, away from the transparent substrate (00), of the back electrode layer (01) covers the second scribing line The projection of the scribing line (21) on one surface of the back electrode layer (01) far away from the transparent substrate (00) enables the front high-resistance layer (04) to be in contact with the back electrode layer (01), and the third scribing line (23) is arranged from one surface, far away from the transparent substrate (00), of the front electrode layer (05) to one surface, far away from the transparent substrate (00), of the back electrode layer (01).
2. The solar cell of claim 1, wherein the scribe lines are in a plurality of groups, the plurality of groups being spaced apart.
3. The solar cell according to claim 1, wherein the center of the projection of the second scribing line (22) on the side of the back electrode layer (01) facing away from the transparent substrate (00) coincides with the center of the projection of the second scribing line (21) on the side of the back electrode layer (01) facing away from the transparent substrate (00).
4. The solar cell according to claim 1, characterized in that the width of the first scribing line (21) is 30 μm to 50 μm.
5. The solar cell according to claim 1, characterized in that the width of the second scribing line (22) is 60 μ ι η to 80 μ ι η.
6. The solar cell according to claim 1, characterized in that the third scribe line (23) has a width of 40 μm to 60 μm.
7. The solar cell according to claim 1, wherein the pitch of the two first scribe lines (21) is 90 μm to 140 μm.
8. The solar cell according to claim 1, characterized in that the third scribing line (23) is spaced from the first scribing line (21) by 240 μm to 300 μm.
9. The solar cell according to any of claims 1 to 8, characterized in that the light absorbing layer (02) is CIGS.
10. A method of preparing the solar cell of any one of claims 1-9, comprising:
forming a back electrode layer (01) on one side of a transparent substrate (00);
carrying out first scribing on the back electrode layer (01) to form two first scribing lines (21);
sequentially preparing a light absorption layer (02) and a buffer layer (03) on the back electrode layer (01);
carrying out second scribing on the buffer layer (03), so that the projection of a second scribing line (22) formed on the surface, far away from the transparent substrate (00), of the back electrode layer (01) covers the projection of a second scribing line (21) on the surface, far away from the transparent substrate (00), of the back electrode layer (01), and the back electrode layer (01) is partially exposed;
sequentially preparing a high-resistance layer (04) and a front electrode layer (05) on the buffer layer (03) and the second scribing line (22);
and scribing for the third time on the front electrode layer (05) to form a third scribing line (23).
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009060062A (en) * | 2007-09-04 | 2009-03-19 | Ulvac Japan Ltd | Thin-film solar cell, and its manufacturing method |
| CN202259357U (en) * | 2011-08-30 | 2012-05-30 | 山东孚日光伏科技有限公司 | Copper indium selenium film solar light-transmitting assembly |
| CN104011876A (en) * | 2011-10-18 | 2014-08-27 | Lg伊诺特有限公司 | Solar cell apparatus and method of fabricating the same |
| KR20150118605A (en) * | 2014-04-14 | 2015-10-23 | 에스케이이노베이션 주식회사 | Solar cell and method of fabricating the same |
| CN105789351A (en) * | 2016-01-19 | 2016-07-20 | 厦门神科太阳能有限公司 | Thin-film solar cell module and preparation method thereof |
| CN106784040A (en) * | 2017-02-04 | 2017-05-31 | 江苏神科新能源有限公司 | A kind of CIGS based thin film solar cells and preparation method thereof |
| CN108735827A (en) * | 2018-06-04 | 2018-11-02 | 北京铂阳顶荣光伏科技有限公司 | A kind of solar battery sheet and preparation method thereof, solar cell module |
-
2019
- 2019-06-25 CN CN201910557025.4A patent/CN112133772A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009060062A (en) * | 2007-09-04 | 2009-03-19 | Ulvac Japan Ltd | Thin-film solar cell, and its manufacturing method |
| CN202259357U (en) * | 2011-08-30 | 2012-05-30 | 山东孚日光伏科技有限公司 | Copper indium selenium film solar light-transmitting assembly |
| CN104011876A (en) * | 2011-10-18 | 2014-08-27 | Lg伊诺特有限公司 | Solar cell apparatus and method of fabricating the same |
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