CN112098765A - Self-checking system, self-checking circuit and self-checking method of equipment based on thermopile - Google Patents
Self-checking system, self-checking circuit and self-checking method of equipment based on thermopile Download PDFInfo
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- CN112098765A CN112098765A CN202011091394.8A CN202011091394A CN112098765A CN 112098765 A CN112098765 A CN 112098765A CN 202011091394 A CN202011091394 A CN 202011091394A CN 112098765 A CN112098765 A CN 112098765A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M3/00—Investigating fluid-tightness of structures
- G01M3/02—Investigating fluid-tightness of structures by using fluid or vacuum
- G01M3/26—Investigating fluid-tightness of structures by using fluid or vacuum by measuring rate of loss or gain of fluid, e.g. by pressure-responsive devices, by flow detectors
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
- G01R31/2829—Testing of circuits in sensor or actuator systems
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
- G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
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Abstract
The invention provides a self-checking system, a self-checking circuit and a self-checking method of equipment based on a thermopile, wherein the self-checking circuit comprises: a power control circuit configured to apply a voltage or current excitation through the thermopile and to turn off the excitation of the thermopile when the temperature of the thermopile rises to a preset temperature; a voltage measurement circuit configured to measure a change curve of an output voltage of the thermopile when the power supply control circuit turns off the excitation of the thermopile; a signal processing circuit configured to calculate a temperature-lowering response time of the thermopile based on a variation curve of an output voltage of the thermopile; determining whether the thermopile-based device is acceptable based on the cool-down response time. Compared with the prior art, the invention provides voltage or current to stimulate the thermopile to heat the thermopile in the self-checking mode, and realizes the self-checking function by recording and calculating the response time of the temperature reduction of the thermopile, thereby judging the state of the chip.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the field of Micro-Electro-Mechanical System (MEMS) devices, in particular to a self-checking System, a self-checking circuit and a self-checking method of equipment based on a thermopile.
[ background of the invention ]
In the production and use processes of the infrared sensor, a defective device is inevitably generated, and the infrared sensor has a self-detection function in order to conveniently and timely find problems and ensure the accuracy of infrared test. In the conventional technical scheme, some heating units special for self-test are required to be additionally arranged to generate excitation, and precious sensitive area is occupied. And some sensors need to be heated in a partitioning mode, and then output absolute values are measured mutually. The method can play a certain detection role, but can not test and distinguish important failure modes such as whether etching is clean or not, whether packaging is air leakage or not, whether gas components are correct or not and the like.
Therefore, a new technical solution is needed to overcome the above problems.
[ summary of the invention ]
An object of the present invention is to provide a self-checking system, a self-checking circuit and a self-checking method for a thermopile-based device, which can achieve self-checking of the thermopile-based device without additionally providing a special heating unit.
According to a first aspect of the present invention, there is provided a self-test circuit for a thermopile-based device, comprising: a power control circuit configured to apply a voltage or current excitation through a thermopile to warm up the thermopile when entering a self-test mode, and to turn off the excitation of the thermopile when the temperature of the thermopile rises to a preset temperature; a voltage measurement circuit configured to measure a change curve of an output voltage of the thermopile when the power supply control circuit turns off the excitation of the thermopile; a signal processing circuit configured to calculate a temperature-lowering response time of the thermopile based on a variation curve of an output voltage of the thermopile; it is further configured to determine whether the thermopile-based device is qualified based on the cool-down response time.
According to a second aspect of the present invention, there is provided a self-test system for thermopile-based equipment, comprising: a thermopile-based device and a self-test circuit, the self-test circuit comprising: a power control circuit configured to apply a voltage or current excitation through a thermopile to warm up the thermopile when entering a self-test mode, and to turn off the excitation of the thermopile when the temperature of the thermopile rises to a preset temperature; a voltage measurement circuit configured to measure a change curve of an output voltage of the thermopile when the power supply control circuit turns off the excitation of the thermopile; a signal processing circuit configured to calculate a temperature-lowering response time of the thermopile based on a variation curve of an output voltage of the thermopile; it is further configured to determine whether the thermopile-based device is qualified based on the cool-down response time.
According to a third aspect of the present invention, there is provided a method of self-testing a thermopile-based device, comprising: when entering a self-checking mode, applying voltage or current excitation to pass through a thermopile so as to heat the thermopile; when the temperature of the thermopile is increased to a preset temperature, closing the excitation of the thermopile, and measuring the change curve of the output voltage of the thermopile; calculating the cooling response time of the thermopile based on the variation curve of the output voltage of the thermopile; determining whether the thermopile-based device is acceptable based on the cool-down response time.
Compared with the prior art, the invention provides voltage or current to stimulate the thermopile to heat the thermopile in the self-checking mode, and realizes the self-checking function by recording and calculating the response time of the temperature reduction of the thermopile, thereby judging the state of the chip.
[ description of the drawings ]
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise. Wherein:
FIG. 1 is a schematic electrical circuit diagram of a self-test system for a thermopile-based device in one embodiment of the present invention;
FIG. 2 is a flow chart illustrating a self-test method of the self-test circuit shown in FIG. 1 according to an embodiment of the present invention;
FIG. 3 is a graph illustrating the self-test output of a typical thermopile measured by the voltage measurement circuit of FIG. 1 in one embodiment of the present invention;
FIG. 4 is a top view of a typical thermopile infrared sensor.
[ detailed description ] embodiments
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Reference herein to "one embodiment" or "an embodiment" means that a particular feature, structure, or characteristic may be included in at least one implementation of the invention. The appearances of the phrase "in one embodiment" in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. Unless otherwise specified, the terms connected, and connected as used herein mean electrically connected, directly or indirectly.
Fig. 1 is a schematic circuit diagram of a self-test system of a thermopile-based device according to an embodiment of the present invention. The thermopile-based device self-test system illustrated in fig. 1 includes a thermopile-based device 110 and a self-test circuit 120.
In the particular embodiment shown in FIG. 1, the thermopile-based device 110 is a thermopile infrared sensor. Fig. 4 is a top view of a typical thermopile infrared sensor. The thermopile infrared sensor shown in fig. 4 includes a support and infrared absorption coating 410 on a base layer (not shown), an absorption region 420 in the middle of the support and infrared absorption coating 410, a plurality of thermocouples T1, T2, T3, T4 at the periphery of the absorption region 420, an infrared absorption optimization layer 430 in the absorption region 420, and a plurality of etching holes 440 distributed in the absorption region 420, the etching holes 440 sequentially penetrating the infrared absorption optimization layer 430, the support and infrared absorption coating 410 to the base layer. Wherein, a plurality of thermocouples T1, T2, T3 and T4 are connected in series in sequence to form a thermopile.
The self-test circuit 120 includes a power control circuit 122, a voltage measurement circuit 124, and a signal processing circuit (or microprocessor) 126.
The power control circuit 122 is coupled to the thermopile infrared sensor 110, the power control circuit 122 configured to: when the self-test mode is entered, preset voltage or current is applied to excite the thermopile, and the temperature of the thermopile can be rapidly increased to the preset temperature due to joule heat generated; when the temperature of the thermopile rises to a preset temperature, the excitation of the thermopile is turned off (or the voltage or current excitation to the thermopile is stopped). For example, a certain controlled voltage is applied to the thermopile by the power control circuit 122, heat is generated due to joule effect, and the temperature of the thermopile rises, wherein
P is the total power applied to the thermopile, V is the voltage applied to the thermopile, and R is the total resistance of the thermopile.
The voltage measurement circuit 124 is configured to: when the temperature of the thermopile rises to a preset temperature and the power control circuit 122 turns off the energization to the thermopile, a variation curve of the output voltage of the thermopile is measured.
The signal processing circuitry 126 is configured to: the time constant τ of the thermopile is calculated based on the variation curve of the output voltage of the thermopile measured by the voltage measurement circuit 124. The time constant tau of the thermopile is: in the change curve of the output voltage of the thermopile, the time required when the output voltage of the thermopile decays from the maximum value to 1/e of the maximum value (or decreases from the maximum value to 63.2% of the maximum value).
The variation curve of the output voltage of the thermopile (or the self-test output curve of the thermopile) generally conforms to the following formula:
wherein, V is the output voltage (or self-test output voltage) at two ends of the thermopile; e is a natural constant having a value of about 2.718281828459045; τ is the time constant of the thermopile; and t is the decay time of the output voltage of the thermopile.
The time constant τ of the thermopile is R × C (3),
wherein R is the thermal resistance of the thermopile, and C is the thermal capacity of the thermopile. Thus, the time constant τ of the thermopile is related to the specific heat capacity, density and volume of the gas and thermopile structure within the thermopile infrared sensor 110.
Referring to FIG. 3, it is shown a self-test output curve of a typical thermopile according to one embodiment of the present invention, as measured by the voltage measurement circuit 124 shown in FIG. 1. In the embodiment shown in fig. 3, the self-test output curves of the thermopile in three cases are shown, which are respectively the self-test output curve of a normal thermopile, the self-test output curve of a thermopile with silicon residue, and the self-test output curve of a thermopile with insufficient air pressure. And the signal processing circuit 126 calculates the time constants τ of the three thermopiles to be 11, 15, and 21 milliseconds, respectively, based on the self-test output curves of the three thermopiles.
In one embodiment, the signal processing circuit 126 calculates the time constant τ of the thermopile based on the self-test output curve of the thermopile by: recording the decay time of the output voltage of the thermopile from the highest point to the lowest point (the output value is equal to or infinitely close to zero), and calculating the time constant tau of the thermopile based on the decay time, wherein the highest point is the output voltage value of the thermopile at the preset temperature, and the lowest point is the output voltage value of the thermopile when the thermopile falls to the ambient temperature (theoretically, the output voltage value is equal to or infinitely close to zero).
It should be noted that the self-test circuit 120 shown in fig. 1 further includes a signal amplifying module (not shown) and an analog-to-digital converting module (not shown). The output end of the voltage measuring circuit 124 is connected to the input end of the signal amplifying module, the output end of the signal amplifying module is connected to the input end of the analog-to-digital conversion module, and the output end of the analog-to-digital conversion module is connected to the input end of the signal processing module 126. The signal amplification module is used for amplifying the change curve of the output voltage of the thermopile measured by the voltage measurement circuit 124; the analog-to-digital conversion module is used for converting the amplified change curve of the output voltage of the thermopile into a digital signal; the signal processing module 126 calculates the time constant τ of the thermopile based on the digital signal.
The signal processing circuitry 126 is further configured to: whether the thermopile infrared sensor 110 is qualified or not is determined based on the time constant τ of the thermopile calculated by the signal processing circuit 126. Specifically, the signal processing circuit 126 compares the calculated time constant τ of the thermopile with a reference time constant, and if the calculated time constant τ is within the reference time constant range, it is determined that the device is qualified; otherwise, judging the device to be unqualified.
The signal processing circuitry 126 is further configured to: and after the device is judged to be unqualified, judging a failure mode according to the calculated difference value between the time constant tau of the thermopile and the reference constant. The failure modes include: incomplete etching, air leakage in packaging, incorrect gas components, incorrect gas pressure, device loss of function and the like.
The signal processing circuitry 126 is further configured to: when the time constant stored in the memory (not identified) in advance is not available, the reference time constant is a preset time constant; when the memory has a pre-stored time constant, the reference time constant is the pre-stored time constant. In one embodiment, the preset time constant may be a measured time constant theoretical value interval.
The signal processing circuitry 126 is further configured to: and after the device is judged to be qualified, storing the calculated time constant tau of the thermopile in the memory to be used as a pre-stored time constant for subsequent self-inspection.
Fig. 2 is a schematic flow chart illustrating a self-test method of the self-test circuit 120 shown in fig. 1 according to an embodiment of the invention. The self-test method of the self-test circuit shown in fig. 2 includes the following steps.
In step 203, the signal processing circuit 126 calculates the time constant τ of the thermopile based on the variation curve of the output voltage of the thermopile measured by the voltage measuring circuit 124.
In step 204, the signal processing circuit 126 determines whether there is a pre-stored time constant, and if so, the process proceeds to step 205, and if not, the process proceeds to step 206.
And step 210, after the device is judged to be unqualified, judging a failure mode according to the calculated difference value between the time constant tau and the reference constant. The failure modes include: incomplete etching, air leakage in packaging, incorrect gas components, incorrect gas pressure, device loss of function and the like.
It should be particularly noted that steps 206 to 209 can be summarized as follows: the calculated time constant τ of the thermopile is compared with a reference time constant by the signal processing circuit 126 to determine whether the thermopile infrared sensor 110 is acceptable.
The self-checking circuit and the self-checking method have the following advantages:
1. the invention is applicable to all infrared detectors. No additional heater, heating unit is needed.
2. The invention does not need a heating unit to occupy the effective area of the infrared detector, thereby increasing the sensitivity.
3. The invention does not need to add extra circuits for the structure of the infrared detector.
4. The invention does not need to add specific layers for adding heaters, thereby reducing the manufacturing cost.
5. In the production process, the invention can determine the state of each chip in the wafer state, such as whether the etching is clean or not, whether the detection structure is broken or not and the like. That is, the present invention may be used for wafer level testing of production devices. Therefore, the damaged chip can be picked out in advance, the waste of subsequent packaging materials is reduced, and the packaging process efficiency is improved.
6. In the production process, whether the packaging is normal, whether gas leaks, whether the gas pressure is accurate, whether the detection structure is damaged in the packaging process and the like can be confirmed through the self-checking function in the invention. That is, the present invention may be used for package level testing of production devices.
7. The self-checking circuit and the self-checking method are also suitable for an infrared detection module or other similar infrared detectors.
In summary, in the self-checking mode, the thermopile is energized by supplying voltage or current to heat the thermopile, the self-checking function is realized by recording and calculating the response time of the temperature reduction of the thermopile, and the state of the chip is judged.
In the present invention, the terms "connected", "connecting", and the like mean electrical connections, and direct or indirect electrical connections unless otherwise specified.
The above description is only a preferred embodiment of the present invention, and the scope of the present invention is not limited to the above embodiment, but equivalent modifications or changes made by those skilled in the art according to the present disclosure should be included in the scope of the present invention as set forth in the appended claims.
Claims (12)
1. A self-test circuit for a thermopile-based device, comprising:
a power control circuit configured to apply a voltage or current excitation through a thermopile to warm up the thermopile when entering a self-test mode, and to turn off the excitation of the thermopile when the temperature of the thermopile rises to a preset temperature;
a voltage measurement circuit configured to measure a change curve of an output voltage of the thermopile when the power supply control circuit turns off the excitation of the thermopile;
a signal processing circuit configured to calculate a temperature-lowering response time of the thermopile based on a variation curve of an output voltage of the thermopile; it is further configured to determine whether the thermopile-based device is qualified based on the cool-down response time.
2. The self-test circuit of a thermopile-based device according to claim 1,
the signal processing circuit is further configured to determine a failure mode of the thermopile-based device based on the cool down response time.
3. The self-test circuit of a thermopile-based device according to claim 1,
the cooling response time of the thermopile is the time constant tau of the thermopile,
the time constant tau of the thermopile is: and in the change curve of the output voltage of the thermopile, the time required for the output voltage of the thermopile to decay from the maximum value to 1/e of the maximum value.
4. The self-test circuit of a thermopile-based device according to claim 3,
"the signal processing circuit is configured to determine whether the thermopile-based device is acceptable based on the time constant τ of the thermopile" includes:
the signal processing circuit compares the time constant tau of the thermopile with a reference time constant, and if the time constant tau is within the reference time constant range, the device is judged to be qualified; if the reference time constant is not within the reference time constant range, the device is judged to be unqualified.
5. The self-test circuit of a thermopile-based device according to claim 4,
the signal processing circuit is further configured to: after the device is judged to be unqualified, judging a failure mode according to the difference value of the time constant tau of the thermopile and the reference constant;
the failure modes include: incomplete etching, air leakage in packaging, incorrect gas components, incorrect gas pressure and device loss of function.
6. The self-test circuit of a thermopile-based device according to claim 4,
the signal processing circuit is further configured to: when the memory has no pre-stored time constant, the reference time constant is a preset time constant; when the memory has a pre-stored time constant, the reference time constant is the pre-stored time constant,
the signal processing circuit is further configured to: and after the device is judged to be qualified, storing the time constant tau of the thermopile in the memory to serve as a prestored time constant.
7. The self-test circuit of a thermopile-based device according to claim 3,
"the signal processing circuit calculates the time constant τ of the thermopile based on the variation curve of the output voltage of the thermopile" includes:
recording the decay time of the output voltage of the thermopile from the highest point to the lowest point, and calculating the time constant of the thermopile based on the decay time,
the maximum point is an output voltage value when the thermopile is at a preset temperature, and the minimum point is an output voltage value when the thermopile is cooled to the ambient temperature.
8. A self-test system for thermopile-based device, comprising:
a thermopile-based device;
a self-test circuit according to any one of claims 1 to 7.
9. A method of self-testing a thermopile-based device, comprising:
when entering a self-checking mode, applying voltage or current excitation to pass through a thermopile so as to heat the thermopile;
when the temperature of the thermopile is increased to a preset temperature, closing the excitation of the thermopile, and measuring the change curve of the output voltage of the thermopile;
calculating the cooling response time of the thermopile based on the variation curve of the output voltage of the thermopile;
determining whether the thermopile-based device is acceptable based on the cool-down response time.
10. The method for self-testing of a thermopile-based device according to claim 9,
the cooling response time of the thermopile is the time constant tau of the thermopile,
determining whether the thermopile-based device is acceptable based on the time constant τ of the thermopile includes:
judging whether a pre-stored time constant exists or not;
if the pre-stored time constant exists, comparing the pre-stored time constant serving as a reference time constant with the time constant tau of the thermopile, if the pre-stored time constant exists in the range of the pre-stored time constant, judging that the device is qualified, otherwise, judging that the device is unqualified;
and if no pre-stored time constant exists, comparing a preset time constant serving as a reference time constant with the time constant tau of the thermopile, judging that the device is qualified if the preset time constant is within the range of the preset time constant, and storing the time constant tau of the thermopile, otherwise, judging that the device is unqualified.
11. The method for self-testing of a thermopile-based device according to claim 10, further comprising: after the device is judged to be unqualified, judging a failure mode according to the difference value of the time constant tau of the thermopile and the reference constant,
the failure modes include: incomplete etching, air leakage in packaging, incorrect gas components, incorrect gas pressure and device loss of function.
12. The method for self-testing of a thermopile-based device according to claim 9,
the self-test method is used for wafer-level testing of devices; or
The self-test method is used for package-level testing of production devices.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115568052A (en) * | 2022-11-03 | 2023-01-03 | 江苏新恒基特种装备股份有限公司 | Intermediate frequency rapid heating control method and system based on infrared temperature measurement |
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2020
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115568052A (en) * | 2022-11-03 | 2023-01-03 | 江苏新恒基特种装备股份有限公司 | Intermediate frequency rapid heating control method and system based on infrared temperature measurement |
| CN115568052B (en) * | 2022-11-03 | 2023-03-10 | 江苏新恒基特种装备股份有限公司 | Intermediate frequency rapid heating control method and system based on infrared temperature measurement |
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