CN111987088A - Organic substrate embedding packaging structure integrating antenna and radio frequency front end - Google Patents
Organic substrate embedding packaging structure integrating antenna and radio frequency front end Download PDFInfo
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- CN111987088A CN111987088A CN201910437301.3A CN201910437301A CN111987088A CN 111987088 A CN111987088 A CN 111987088A CN 201910437301 A CN201910437301 A CN 201910437301A CN 111987088 A CN111987088 A CN 111987088A
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- 238000004806 packaging method and process Methods 0.000 title description 16
- 239000002184 metal Substances 0.000 claims abstract description 80
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/18—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q19/00—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic
- H01Q19/10—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic using reflecting surfaces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6661—High-frequency adaptations for passive devices
- H01L2223/6677—High-frequency adaptations for passive devices for antenna, e.g. antenna included within housing of semiconductor device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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Abstract
An organic substrate embedded package structure integrating an antenna and a radio frequency front end, comprising: an antenna module; and a radio frequency front end module disposed below the antenna module, the radio frequency front end module comprising: the first core board comprises at least one through groove inside; at least one active chip, one side surface of which is an active surface and the other side surface of which is back metal, wherein the active chip is embedded in the through groove of the first core board; the first dielectric layer is arranged below the first core plate, and a through groove is arranged at a position corresponding to the through groove in the first core plate; the second core board is arranged below the first dielectric layer, and a plurality of component bonding pads are arranged on the upper surface of the second core board; one side of the active surface of the active chip faces downwards and is inversely arranged on a surface element device bonding pad on the second core plate; and the second dielectric layer is arranged above the first core plate, and a plurality of metallized blind holes are arranged in the second dielectric layer in a penetrating manner.
Description
Technical Field
The invention relates to the technical field of semiconductor packaging, in particular to an organic substrate embedded packaging structure integrating a millimeter wave antenna and a radio frequency front end.
Background
In order to improve the integration level, the international semiconductor technology development route organization proposes a System In Package (SiP) in which a processor, a memory, a radio frequency module, a digital module, an analog module, an optoelectronic module, a sensor module, and the like are integrated into a single Package, and if an Antenna is also integrated into the SiP, the SiP is called an Antenna In Package (AiP).
Current AiP research focuses mainly on the integration of single-chip transceiver and antenna, however, the implementation of multi-chip rf front end and antenna array integration has the following technical problems: the millimeter wave chip used at the radio frequency front end is based on a compound semiconductor process, the packaging form of the chip is limited to lead bonding by the requirements of an active surface transmission line, an inductance-capacitance air bridge and back grounding, but the parasitic effect of a bonding line is more obvious along with the increase of the working frequency; meanwhile, the demands of electronic products on light thinning and miniaturization of the packaging body are continuously improved, but the light thinning packaging structure limits the thickness of the antenna substrate, so that the improvement of the antenna performance is limited; in addition, when the antenna is integrated with the radio frequency front end, the problem of electromagnetic interference between the active chip and between the antenna and the active chip is particularly serious; moreover, most passive elements are surface-mounted on the mainboard, and the area of the radio frequency front-end module is occupied.
Therefore, in view of the above problems in the prior art, there is a need to develop an antenna-level package structure for a compound semiconductor active chip, which is light, thin, compact, and has good electromagnetic compatibility and high performance.
Disclosure of Invention
Technical problem to be solved
The invention provides an organic substrate embedded packaging structure integrating an antenna and a radio frequency front end, which at least partially meets the requirements of miniaturization, lightness and thinness and high performance of antenna level packaging based on a compound semiconductor active chip in a millimeter wave band.
(II) technical scheme
In an aspect of the present invention, an organic substrate embedded package structure integrating an antenna and a radio frequency front end includes: an antenna module; and a radio frequency front end module disposed below the antenna module, the radio frequency front end module comprising: the first core board comprises at least one through groove inside; at least one active chip, one side surface of which is an active surface and the other side surface of which is back metal, wherein the active chip is embedded in the through groove of the first core board; the first dielectric layer is arranged below the first core plate, and a through groove is arranged at a position corresponding to the through groove in the first core plate; the second core board is arranged below the first dielectric layer, and a plurality of component bonding pads are arranged on the upper surface of the second core board; one side of the active surface of the active chip faces downwards and is inversely arranged on a surface element device bonding pad on the second core plate; and the second dielectric layer is arranged above the first core plate.
In a further aspect, the rf front-end module further includes at least one surface-mount passive component, where one side of the surface-mount passive component has a pad embedded in the through groove of the first core board, and one side of the pad faces downward and is flip-chip mounted on a pad of a surface element device on the second core board.
In a further aspect, the rf front-end module further includes at least one single-layer capacitor, and the single-layer capacitor is embedded in the through groove of the first core board and flip-chip mounted on the surface element pad of the second core board.
In a further scheme, a first metal layer is further plated on the side wall of the through groove of the first core board, and a dielectric layer is further arranged between the first metal layer and the active chip.
In a further scheme, a plurality of electromagnetic shielding hole grids penetrate through the second core plate, and the second core plate and the first metal layer form a metal shielding cavity.
In a further scheme, the active chip, the embedded surface-mounted passive element and the single-layer capacitor are interconnected with peripheral circuits through metalized blind holes in the second core board.
In a further aspect, the rf front-end module further has a plurality of metallized through holes.
In a further aspect, the antenna module includes: at least one antenna element; a periodic metal structure; the periodic metal structure and the second metal layer are jointly used as an antenna reflection plane; furthermore, the antenna module further includes: the third core plate, the periodic metal structure is electroplated on the upper surface; the third dielectric layer is arranged between the third core plate and the second metal layer; and the fourth dielectric layer is arranged between the antenna unit and the periodic metal structure.
In a further scheme, the back metal of the active chip is connected with the second metal layer through a metalized blind hole of the second dielectric layer.
In a further scheme, the other electrode of the single-layer capacitor is connected with the metal layer II through a metalized blind hole of the dielectric layer II.
In a further scheme, the periodic metal structure is an electromagnetic structure and has in-phase reflection characteristics in a set millimeter wave band.
In a further aspect, the antenna unit is disposed perpendicular to the rf front end module and interconnected by a metallized via for reducing electromagnetic interference between the antenna module and the rf front end module.
In a further scheme, the dielectric layer is formed by pressing and then curing a prepreg.
In a further aspect, the lower surface of the second core board is further provided with a plurality of solder balls.
In another aspect of the present invention, a method for manufacturing an organic substrate embedded package structure integrating an antenna and a radio frequency front end is further provided, including:
and patterning the upper surface of the second core board, wherein the upper surface of the second core board comprises a component bonding pad, a metalized blind hole capturing bonding pad, an interconnecting wire and the like.
And placing the core board on a high-temperature bonding table, processing the metal salient points on the component bonding pads through a wire bonding machine, and flattening the metal salient points to approximately consistent heights.
The active surface of an active chip and the surface of a surface-mounted passive element with a bonding pad face downwards, and are respectively inversely arranged on the metal bumps on the upper surface of the second core plate in a hot-pressing mode, and meanwhile, the single-layer capacitor is inversely arranged on the corresponding metal bumps on the upper surface of the core plate;
milling a through groove in which an active chip, a surface-mounted passive element and a single-layer capacitor are embedded in a first core board, plating metal copper on the side wall of the through groove, and patterning metal coatings on the upper surface and the lower surface of the core board by photoetching;
drilling a through groove with a slightly larger area than that of the through groove in the first core board on the first dielectric layer below the first core board; stacking a prepreg, a first core plate, another prepreg and a second core plate together from top to bottom, performing vacuum lamination, converting the two prepregs into a second dielectric layer and a first dielectric layer after high-temperature curing,
and processing a metalized blind hole in the second dielectric layer, processing a metalized through hole in the whole structure, wherein part of the metalized blind hole is used for electromagnetic shielding, part of the metalized blind hole is used for electrical interconnection, and the metalized through hole is used for electromagnetic shielding and interconnection between different metal ground planes. And then plating a second metal layer on the upper surface of the second dielectric layer above the first core board, wherein the second metal layer is used as a metal ground plane of an electronic component in the radio frequency front-end module.
Electroplating a layer of periodic metal structure on the upper surface of the third core board, and using the periodic metal structure and the second metal layer as a reflecting plane of the antenna unit;
stacking a half of the cured sheet, a third core plate and the other half of the cured sheet from top to bottom respectively, and performing vacuum lamination, wherein the half of the cured sheet is converted into a fourth dielectric layer and a third dielectric layer after high-temperature curing, and a second metal layer in the radio frequency front-end module faces upwards;
processing a metallized blind hole in the second core board, and processing a metallized through hole in the whole structure, wherein the metallized blind hole is used as a signal hole, a power supply hole and an electromagnetic shielding hole grid, and the metallized through hole is used as a feed hole of the antenna;
patterning the upper surface of the fourth dielectric layer to process an antenna unit;
and patterning the lower surface of the second core board, then respectively coating green oil on the upper surface and the lower surface of the packaging body, and assembling surface-mounted passive elements and solder balls at the bottom of the packaging body.
(III) advantageous effects
The packaging mode of embedding and combining the organic core board with the flip chip bonding is adopted, so that the parasitic effect caused by using lead bonding is obviously reduced and the packaging section is reduced under the condition of meeting the requirement of connecting a metal ground at the back of a chip.
The reflecting plane of the antenna is a periodic metal structure with in-phase reflection characteristics, so that the bandwidth, the gain and the radiation efficiency of the antenna can be improved under the condition of low profile.
The antenna is vertically arranged with the radio frequency front end and is interconnected through the metallized through hole, so that the electromagnetic interference between the antenna and the radio frequency front end can be effectively reduced, and the packaging area is reduced.
The side wall of the cavity embedded by the active chip is plated with a metal layer, and good electromagnetic isolation between the active chips and the antenna can be realized by combining a metal hole grid structure.
Surface-mounted passive elements and single-layer capacitors are also embedded in the same embedded organic core board, so that high-density integration of the radio frequency front end is realized.
Drawings
Fig. 1 is a structural diagram of an organic substrate embedded package integrating an antenna and a radio frequency front end according to an embodiment of the present invention.
Fig. 2 is a structural diagram of the manufacturing step 1 of the package structure shown in fig. 1.
Fig. 3 is a structural diagram of the preparation step 2 of the package structure shown in fig. 1.
Fig. 4 is a structural diagram of the preparation step 3 of the package structure shown in fig. 1.
Fig. 5 is a structural diagram of the preparation step 4 of the package structure shown in fig. 1.
Fig. 6 is a structural diagram of the manufacturing step 5 of the package structure shown in fig. 1.
Fig. 7 is another block diagram of step 5 of the package structure shown in fig. 1.
Fig. 8 is a structural diagram of the manufacturing step 6 of the package structure shown in fig. 1.
Fig. 9 is a structural diagram of the manufacturing step 7 of the package structure shown in fig. 1.
Fig. 10 is a structural diagram of the manufacturing step 8 of the package structure shown in fig. 1.
[ description of reference ]
Core board No. 1, metal layer No. 11,
2 active die, 21 die pad, 22 metal bump, 23 active die back metal,
24 embedded surface-mounted passives, 25 surface-mounted passives, 26 single-layer capacitors,
27 a single layer of capacitor electrodes, and,
core board No. 3, electromagnetic shielding hole grid 31, metallized blind hole capture pad 32, element device pad 33 and metallized blind hole 35,
a dielectric layer No. 4 having a first dielectric layer,
dielectric layer No. 5, metal layer No. 51, metallized blind hole 52, sidewall dielectric 53 and metallized through hole 54
No. 6 core board, 61 periodic metal structure,
a dielectric layer No. 7, a dielectric layer III,
a dielectric layer No. 8, an antenna unit 81,
9 the through-holes are metallized 9, and,
10 layers of green oil are added to the oil,
12 solder balls.
Detailed Description
In order that the objects, technical solutions and advantages of the present invention will become more apparent, the present invention will be further described in detail with reference to the accompanying drawings in conjunction with the following specific embodiments.
The invention discloses an organic substrate embedding packaging structure integrating an antenna and a radio frequency front end, and please refer to fig. 1, which comprises: an antenna module; and a radio frequency front end module disposed below the antenna module, the radio frequency front end module comprising: the first core board 1 comprises at least one through groove inside; at least one active chip 2, one side surface of which is an active surface and the other side surface of which is an active chip back metal 23, wherein the active chip 2 is embedded in the through groove of the first core board 1; the first dielectric layer 4 is arranged below the first core plate 1, and a through groove is arranged at a position corresponding to the through groove in the first core plate 1; the second core board 3 is arranged below the first medium layer 4, and the upper surface of the second core board is provided with a plurality of component bonding pads 33; wherein, the active surface side of the active chip 2 faces downwards and is inversely installed on the surface element bonding pad 33 on the second core plate 3; and a second dielectric layer 5 arranged above the first core board 1, wherein a plurality of metallized blind holes 52 are arranged in the second dielectric layer 5 in a penetrating way and are used as channels for connecting the radio frequency front-end module element with a second metal layer 51 of the metal ground plane.
In addition, the side wall of the through groove of the first core board 1 is further plated with a first metal layer 11, and a dielectric layer is further arranged between the first metal layer 11 and the active chip 2. In an embodiment of the present invention, the rf front-end module further includes at least one embedded surface-mount passive element 24, the embedded surface-mount passive element 24 having a pad on one side and being embedded in the through slot of the first core board 1, wherein the pad is on the side facing downward and being flip-chip mounted on the pad 33 of the surface element on the second core board 3, and the rf front-end module further includes at least one single-layer capacitor 26, the single-layer capacitor 26 being embedded in the through slot of the first core board 1 and being flip-chip mounted on the pad 33 of the surface element on the second core board 3. In addition, a plurality of metallized blind holes 35 are formed in the second core board 3, the active chip 2 can be connected with an external circuit through the plurality of metallized blind holes 35, and meanwhile, a plurality of electromagnetic shielding hole grids 31 are formed in the second core board 3 in a penetrating manner and form a metal shielding cavity together with the first metal layer 11, so that electromagnetic interference between the active chip 2 and other active chips or the antenna unit 81 is shielded. In this embodiment, the flip chip package method of the first core board 1 combining the embedded active chip 2 and the embedded surface mount passive element 24, under the condition that the active chip 2 is connected to the metal ground at the back, significantly reduces the parasitic effect caused by wire bonding, and reduces the package profile.
In an embodiment of the present invention, the antenna module includes: at least one antenna unit 81; the periodic metal structure 61 and the second metal 51 are used as a reflecting plane of the antenna unit together; furthermore, the antenna module further includes: a third core plate 6, on the upper surface of which the periodic metal structure 61 is electroplated; and a third dielectric layer 7 and a fourth dielectric layer 8 respectively arranged between the third core board 6 and the second metal layer 51, and between the antenna unit 81 and the periodic metal structure 61.
In an embodiment of the present invention, the periodic metal structure 61 is an electromagnetic structure, and has an in-phase reflection characteristic in a set millimeter wave band, and the antenna unit 81 is vertically disposed with the rf front-end module and interconnected through the metalized via 9 for reducing electromagnetic interference between the antenna module and the rf front-end module.
In addition, a plurality of solder balls 12 are arranged on the lower surface of the second core plate 3 for connecting with an external circuit.
Preferably, the dielectric layer in the package structure is formed by pressing and then curing a prepreg.
The present invention also discloses a process for preparing the package structure, and a detailed method for preparing the package structure provided by the present invention will be described in steps with reference to the accompanying drawings. It may be evident, however, that one or more embodiments may be practiced without these specific details. It will be appreciated by those skilled in the art that the following specific details are not to be construed as limiting the invention.
The preparation steps comprise:
Referring to fig. 8, a metallized blind via 52 and a metallized through via 54 are formed in the dielectric layer 5, wherein the metallized blind via 52 includes a metallized blind via with the back metal 23 of the active chip grounded, a metallized blind via with the other electrode 27 of the single-layer capacitor 26 grounded, and a metal via grid for electromagnetic shielding. The metalized through hole 54 is mainly a grounding hole, and then the upper surface of the second dielectric layer 5 is patterned to form a second metal layer 51;
referring to fig. 9, in step 7, the upper surface of the core board No. three 6 is patterned by photolithography, and then a periodic metal structure 61 is plated on the upper surface, in an embodiment of the present invention, the periodic metal structure 61 has an in-phase reflection characteristic in a set millimeter wave band.
Step 9, referring to fig. 1 again, a metallized blind hole 35 is processed in the second core board 3, a metallized through hole 9 is processed in the whole structure, the metallized blind hole 35 is mainly used as a signal hole and a power supply hole, and an electromagnetic shielding hole grid 31, the electromagnetic shielding hole grid 31 and the first metal layer 11 form a metal shielding cavity, the metallized through hole 9 is used as a feed hole of an antenna, the upper surface of the fourth dielectric layer 8 is patterned, an antenna unit 81 is processed, wherein the antenna unit 81 is vertically arranged with the radio frequency front end and is interconnected through the metallized through hole 9 for reducing electromagnetic interference between the antenna and the radio frequency front end, then the upper surface and the lower surface of the antenna unit are respectively coated with a green oil layer 10, meanwhile, the lower surface of the second core board 3 is patterned, and a surface-mounted passive element 25 and a solder ball 12 are mounted at the bottom of the package.
The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (15)
1. An organic substrate embedded package structure integrating an antenna and a radio frequency front end, comprising:
an antenna module; and
a radio frequency front end module disposed below the antenna module, comprising:
the first core board comprises at least one through groove inside;
at least one active chip, one side surface of which is an active surface and the other side surface of which is back metal, wherein the active chip is embedded in the through groove of the first core board;
the first dielectric layer is arranged below the first core plate, and a through groove is arranged at a position corresponding to the through groove in the first core plate;
the second core board is arranged below the first dielectric layer, and the upper surface of the second core board is provided with a plurality of component bonding pads and an interconnection structure;
the second dielectric layer is arranged above the first core plate, and a plurality of metallized blind holes are arranged in the second dielectric layer in a penetrating manner;
and one side of the active surface of the active chip faces downwards and is inversely arranged on the surface element bonding pad on the second core plate.
2. The package structure of claim 1, wherein the rf front-end module further comprises at least one surface-mounted passive component having pads on one side thereof embedded in the through-slots of core board No. one, wherein the pads are facing down and flip-chip mounted on the surface element pads on core board No. two.
3. The package structure of claim 1, wherein the rf front end module further comprises at least one single layer capacitor embedded in the through-slot of core board No. one and flip-chip mounted on the surface element device pads of core board No. two.
4. The package structure of claim 1, wherein a metal layer is further plated on a sidewall of the through-trench of the core board, and a dielectric layer is further disposed between the metal layer and the active chip.
5. The package structure of claim 4, wherein a plurality of electromagnetic shielding grids are formed through the second core board, and form a metal shielding cavity with the first metal layer.
6. The package structure of claim 3, wherein the second core board has a plurality of blind metallized vias formed therethrough, and the active chip, the embedded surface-mount passive component and the single-layer capacitor are interconnected to the peripheral circuit through the blind metallized vias in the second core board.
7. The package structure of claim 1, wherein the RF front-end module further comprises a plurality of metallized through holes.
8. The package structure of claim 1, wherein the antenna module comprises:
at least one antenna element;
A layer of periodic metal structure;
and the second metal layer and the periodic metal structure are jointly used as an antenna reflection plane.
9. The package structure of claim 8, wherein the active die back metal is connected to the metal layer two through a metalized blind via of the dielectric layer two.
10. The package structure of claim 8, wherein the other electrode of the single layer capacitor is connected to the metal layer II through a blind via metallization of the dielectric layer II.
11. The package structure of claim 8, wherein the antenna module further comprises
The third core plate, the periodic metal structure is electroplated on the upper surface;
the third dielectric layer is arranged between the third core plate and the second metal layer;
and the fourth dielectric layer is arranged between the antenna unit and the periodic metal structure.
12. The package structure of claim 8, wherein the periodic metal structure is an electromagnetic structure having in-phase reflection characteristics in a given millimeter wave band.
13. The package structure of claim 8, wherein the antenna unit is vertically disposed with respect to the RF front end module and interconnected by a metallized via for reducing electromagnetic interference between the antenna module and the RF front end module.
14. The package structure according to claims 1, 4, and 11, wherein the dielectric layer is formed by laminating and curing a prepreg.
15. The package structure of claim 1, wherein a plurality of solder balls are further disposed on a lower surface of the second core board.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910437301.3A CN111987088B (en) | 2019-05-23 | 2019-05-23 | Organic substrate embedding packaging structure integrating antenna and radio frequency front end |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910437301.3A CN111987088B (en) | 2019-05-23 | 2019-05-23 | Organic substrate embedding packaging structure integrating antenna and radio frequency front end |
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| Publication Number | Publication Date |
|---|---|
| CN111987088A true CN111987088A (en) | 2020-11-24 |
| CN111987088B CN111987088B (en) | 2022-07-29 |
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| CN201910437301.3A Active CN111987088B (en) | 2019-05-23 | 2019-05-23 | Organic substrate embedding packaging structure integrating antenna and radio frequency front end |
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| CN116895614A (en) * | 2023-07-25 | 2023-10-17 | 华南理工大学 | Millimeter wave system packaging structure integrated by three-dimensional isomerism |
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| CN111987088B (en) | 2022-07-29 |
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