CN111755616A - Flexible display screen and manufacturing method thereof - Google Patents
Flexible display screen and manufacturing method thereof Download PDFInfo
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- CN111755616A CN111755616A CN201910239945.1A CN201910239945A CN111755616A CN 111755616 A CN111755616 A CN 111755616A CN 201910239945 A CN201910239945 A CN 201910239945A CN 111755616 A CN111755616 A CN 111755616A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 238000005538 encapsulation Methods 0.000 claims abstract description 12
- 238000004806 packaging method and process Methods 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 claims description 331
- 239000002184 metal Substances 0.000 claims description 46
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 25
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 25
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 22
- 238000000151 deposition Methods 0.000 claims description 19
- 239000011229 interlayer Substances 0.000 claims description 17
- 229920001721 polyimide Polymers 0.000 claims description 16
- 229920005591 polysilicon Polymers 0.000 claims description 16
- 239000004642 Polyimide Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 7
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 6
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 238000005452 bending Methods 0.000 abstract description 22
- 230000002708 enhancing effect Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 51
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000009413 insulation Methods 0.000 description 7
- 239000002131 composite material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000576 coating method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention relates to a flexible display screen and a manufacturing method thereof, wherein the flexible display screen comprises: a flexible substrate; a buffer layer disposed on the flexible substrate; a device layer disposed on the buffer layer; the supporting film layer is arranged on the device layer; and the packaging layer is arranged on the supporting film layer. The manufacturing method comprises the following steps: forming a flexible substrate; forming a buffer layer on the flexible substrate; forming a device layer on the buffer layer; forming a supporting film layer on the device layer; and forming an encapsulation layer on the support film layer. According to the invention, the support film layer is added in the flexible display screen, and the bending angle is reduced through the added flexibility resistance of the support film layer, so that the stress during bending is uniformly released, and the display problem of material fracture caused by excessive local bending degree is avoided, thereby enhancing the bending resistance of the flexible display screen.
Description
Technical Field
The invention relates to a flexible display screen, in particular to a flexible display screen and a manufacturing method thereof.
Background
In the flexible display panel of the prior art, a Polyimide (PI) is generally used as a flexible substrate, a device structure is formed by depositing a material such as polysilicon (poly), metal (metal), etc., on the flexible substrate, and then an encapsulation layer is formed on the device structure, so as to finally form the flexible display panel, as shown in fig. 8.
In the process of implementing the invention, the inventor finds that the prior art has at least the following problems:
except for the packaging layer, other protection structures are not manufactured on the flexible display screen in the prior art, so that the flexible display screen has defects in the aspects of material flexibility and the like. When in use, after being bent for many times, the metal is easy to break; meanwhile, polysilicon (poly) is relatively brittle, and when the bending angle of the flexible display screen is too large, the polysilicon (poly) is also easily broken.
Therefore, a flexible display screen is urgently needed to solve the problem that the flexible display screen in the prior art is insufficient in material flexibility and the like.
Disclosure of Invention
In order to solve the problem that the flexible display screen in the prior art is insufficient in material flexibility and the like, the embodiment of the invention provides the flexible display screen and the manufacturing method thereof. The specific technical scheme is as follows:
in a first aspect, a flexible display screen is provided, wherein the flexible display screen comprises:
a flexible substrate;
a buffer layer disposed on the flexible substrate;
a device layer disposed on the buffer layer;
the supporting film layer is arranged on the device layer; and
and the packaging layer is arranged on the supporting film layer.
In a first possible implementation manner of the first aspect, a material of the flexible substrate is Polyimide (PI).
In a second possible implementation manner of the first aspect, the buffer layer further includes: a silicon nitride layer disposed on the flexible substrate; and a silicon oxide layer disposed on the silicon nitride layer, the device layer being disposed on the silicon oxide layer.
In a third possible implementation manner of the first aspect, the device layer further includes: the polycrystalline silicon layer is arranged on the buffer layer; a gate insulating layer disposed on the polysilicon layer; a first metal layer disposed on the gate insulating layer; an interlayer insulating layer disposed on the first metal layer; a second metal layer disposed on the interlayer insulating layer; the flat layer is arranged on the second metal layer; and the organic light-emitting diode device layer is arranged on the flat layer, and the support film layer is arranged on the flat layer.
In a fourth possible implementation manner of the first aspect, the device layer is further provided with a plurality of openings, the plurality of openings are located in the non-subpixel region of the device layer, and the support film layer is located on the device layer and in the plurality of openings.
In a fifth possible implementation manner of the first aspect, the material of the support film layer is a polyimide-like material or polymethyl methacrylate.
In a second aspect, a method for manufacturing a flexible display screen is provided, where the method for manufacturing a flexible display screen includes the following steps:
forming a flexible substrate;
forming a buffer layer on the flexible substrate;
forming a device layer on the buffer layer;
forming a supporting film layer on the device layer; and
and forming an encapsulation layer on the support film layer.
In a first possible implementation manner of the second aspect, the step of forming the buffer layer further includes: forming a silicon nitride layer on the flexible substrate; and forming a silicon oxide layer on the silicon nitride layer.
In a second possible implementation manner of the second aspect, the step of forming the device layer further includes: forming a polycrystalline silicon layer on the buffer layer, and etching a required device pattern on the polycrystalline silicon layer; forming a gate insulating layer on the polysilicon layer; forming a first metal layer on the gate insulating layer; forming an interlayer insulating layer on the first metal layer; forming a second metal layer on the interlayer insulating layer; forming a flat layer on the second metal layer; and forming an organic light emitting diode device layer on the planarization layer.
In a third possible implementation manner of the second aspect, the step of forming the support film layer further includes: forming a plurality of openings on the non-sub-pixel region of the device layer; and depositing a material of the support film layer on the device layer to form the support film layer, and enabling the support film layer to be located on the device layer and in the plurality of openings.
With reference to the third possible implementation manner of the second aspect, in a fourth possible implementation manner of the second aspect, the opening is formed on the non-subpixel area of the device layer by a laser or etching method.
With reference to the third possible implementation manner of the second aspect, in a fifth possible implementation manner of the second aspect, the material of the support film layer is a polyimide-like material or polymethyl methacrylate.
Compared with the prior art, the invention has the advantages that:
according to the invention, the support film layer is added in the flexible display screen, and the bending angle is reduced through the added flexibility resistance of the support film layer, so that the stress during bending is uniformly released, and the display problem of material fracture caused by excessive local bending degree is avoided, thereby enhancing the bending resistance of the flexible display screen (device layer).
Meanwhile, the flexure resistance of the flexible display screen is changed by selecting the support film layers made of different materials, so that the bending angle of the reinforced flexible display screen (device layer) is changed, and the bending angle of the flexible display screen (device layer) is changed by flexibly selecting the materials; and because the supporting film layer has certain packaging capacity, the packaging capacity of the flexible display screen can be enhanced while the bending resistance of the flexible display screen (device layer) is enhanced.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a flexible display according to an embodiment of the present invention.
Fig. 2 is another schematic structural diagram of a flexible display according to an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of a flexible display screen according to a second embodiment of the present invention.
Fig. 4 is a schematic flow chart illustrating steps of a method for manufacturing a flexible display according to three embodiments of the present invention.
Fig. 5 is a flowchart illustrating a step of forming a buffer layer according to an embodiment of the present invention.
Fig. 6 is a flowchart illustrating steps for forming a device layer according to an embodiment of the invention.
FIG. 7 is a flowchart illustrating a step of forming a support film according to an embodiment of the invention.
Fig. 8 is a schematic structural diagram of a flexible display screen in the prior art.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
In an embodiment of the present invention, please refer to fig. 1, which shows a schematic structural diagram of a flexible display screen 1 according to an embodiment of the present invention. The flexible display screen 1 comprises a flexible substrate 2, a buffer layer 3, a device layer 4, a support film layer 5 and an encapsulation layer 6, wherein:
the flexible substrate 2 is disposed below the flexible display screen 1, and mainly provides support for the buffer layer 3, the device layer 4, the support film layer 5, and the encapsulation layer 6. The material of the flexible substrate 2 disclosed in the present embodiment is Polyimide (PI), but is not limited thereto. The thickness of the flexible substrate 2 is preferably 50-250nm, but not limited thereto.
Referring to fig. 1 again, the buffer layer 3 is disposed on the flexible substrate 2, and the buffer layer 3 is used to make the combination of the device layer 4 and the flexible substrate 2 more stable, and reduce the turn-on voltage of the device layer 4 and improve the light emitting efficiency. The thickness of the buffer layer 3 is preferably 200 nm and 400nm, but not limited thereto.
To further describe the flexible display panel 1 shown in fig. 1, please refer to fig. 2, which shows another schematic structural diagram of the flexible display panel 1 according to an embodiment of the present invention. The buffer layer 3 disclosed in this embodiment further includes a silicon nitride (SiN) layer 31 and a silicon oxide (SiO) layer 32, the silicon nitride (SiN) layer 31 is disposed on the flexible substrate 2, the silicon oxide (SiO) layer 32 is disposed on the silicon nitride (SiN) layer 31, the device layer 4 is disposed on the silicon oxide (SiO) layer 32, but the material and structure of the buffer layer 3 are not limited thereto, and those skilled in the art may select the buffer layer 3 of other suitable material and structure according to the actual device layer 4.
Referring to fig. 1 again, the device layer 4 is disposed on the buffer layer 3, and the device layer 4 is used for executing the function of the flexible display panel 1 for displaying the image. The thickness of the device layer 4 is preferably 5-15 μm, but not limited thereto. Referring to fig. 2 again, the device layer 4 disclosed in this embodiment further includes a Poly (Poly) layer 41, a gate insulating layer 42, a first metal layer 43, an interlayer Insulating (ILD) layer 44, a second metal layer 45, a Planarization Layer (PLN)46, and an Organic Light Emitting Diode (OLED) device layer 47, the Poly (Poly) layer 41 is disposed on the buffer layer 3, the Poly (Poly) layer 41 is firmly bonded to the flexible substrate 2 through the buffer layer 3, and a desired device pattern is etched on the Poly (Poly) layer 41.
A Gate Insulation (GI) layer 42 disposed on the polysilicon (Poly) layer 41 to insulate the polysilicon (Poly) layer 41 from the first metal layer 43; the first metal layer 43 is disposed on the Gate Insulation (GI) layer 42; an interlayer Insulating (IDL) layer 44 disposed on the first metal layer 43 to insulate the first metal layer 43 from the second metal layer 45; the second metal layer 45 is disposed on the interlayer Insulating (ILD) layer 44, the Planarization Layer (PLN)46 is disposed on the second metal layer 45, so that a Thin Film Transistor (TFT) layer formed by the polysilicon (Poly) layer 41, the Gate Insulating (GI) layer 42, the first metal layer 43, the interlayer Insulating (ILD) layer 44, and the second metal layer 45 has a better film coverage capability, and the Organic Light Emitting Diode (OLED) device layer 47 is disposed on the Planarization Layer (PLN)46, but the structure of the device layer 4 is not limited thereto, and those skilled in the art may select the device layer 4 with other structures according to the teachings of the present invention.
Referring to fig. 1 and 2 again, the supporting film layer 5 is disposed on the device layer 4, and the supporting film layer 5 is preferably made of a material having certain rigidity and flexibility, such as polyimide, which has a hardness greater than that of polyimide and a flexibility slightly inferior to that of polyimide; the material can also be polymethyl methacrylate, only the local hardness is slightly higher than that of the flexible substrate, and the flexibility is slightly poor; it can be other organic or inorganic materials, and it is necessary to satisfy the requirement that the hardness is higher than that of the flexible substrate, and the flexibility is slightly inferior to that of the flexible substrate. The thickness of the support film layer 5 can be selected according to the hardness and flexibility of the material. The bending resistance of the flexible display screen 1 (device layer 4) is enhanced by the added flexure resistance of the support film layer 5 itself. Because different materials have different flexibility resistances, when the material of the supporting film layer 5 is selected, the flexibility resistance of the supporting film layer 5 can be changed by selecting different materials, so that the bending angle of the reinforced flexible display screen 1 (the device layer 4) can be changed, and the bending angle of the flexible display screen 1 (the device layer 4) can be changed by flexibly selecting the materials; and the compactness of the composite material can be selected to achieve a certain packaging capacity, so that the composite material has both supporting capacity and packaging capacity. However, the position of the supporting film layer 5 is not limited thereto, and those skilled in the art can also select to dispose the supporting film layer 5 at other suitable positions according to the teachings of the present invention, for example, the supporting film layer 5 can also be disposed on the buffer layer 3 (below the device layer 4), which is substantially the same as the technical solution of the present application, and shall also fall within the protection scope of the present application.
Referring to fig. 1 and 2 again, the encapsulation layer 6 is disposed on the supporting film layer 5, and the thickness of the encapsulation layer 6 is preferably 8-12 μm, but not limited thereto. The encapsulating layer 6 preferably covers and completely wraps the supporting layer 5 to achieve better encapsulating effect, but not limited thereto. There may be no particular requirement for the choice of the encapsulation layer 6 in the present invention, as is conventional to those skilled in the art.
In the second embodiment of the present invention, please refer to fig. 3, which shows a schematic structural diagram of a flexible display screen in the second embodiment of the present invention. The flexible display screen 1 includes a flexible substrate 2, a buffer layer 3, a device layer 4, a supporting film layer 5, and an encapsulation layer 6, and please refer to an embodiment for selection and setting of materials of the flexible substrate 2, the buffer layer 3, the device layer 4, the supporting film layer 5, and the encapsulation layer 6.
Referring to fig. 3 again, the difference between the present embodiment and the present embodiment is that a plurality of openings 48 are further disposed on the device layer 4, and the plurality of openings 48 are located in the non-subpixel region of the device layer 4 to prevent the light-emitting effect of the device layer 4 from being affected, and the size and the spacing of the plurality of openings 48 may be designed without special requirements in the present invention, and may be designed according to the bending angle required in the design of the product (flexible display 1).
The supporting film layer 5 is disposed on the device layer 4 and in the plurality of openings 48, and the supporting film layer 5 is preferably formed in the plurality of openings 48 and on the device layer 4 by a deposition method, but not limited thereto. The support film layer 5 located in the plurality of openings 48 can provide the device layer 4 with horizontal rigidity when the flexible display panel 1 is bent, so as to prevent local bending from being too large. The support film layer 5 is preferably made of a material with certain rigidity and flexibility, and the specific material can be selected according to the designed bending angle of actual requirements and matching with the rigidity of the material and the distance of the open hole 48, and can also be selected according to the compactness of the material so as to achieve certain packaging capacity, so that the material has both the supporting capacity and the packaging capacity.
Referring to fig. 4, a schematic flow chart of steps of a method 7 for manufacturing a flexible display screen 1 according to three embodiments of the present invention is shown. The manufacturing method 7 of the flexible display 1 comprises the following steps 701-705, wherein:
step 701: the flexible substrate 2 is formed.
Specifically, the flexible substrate 2 is formed by coating a Polyimide resin (PI) on a glass substrate by a coating method, and after the subsequent steps of manufacturing the flexible display panel 1 are completed, the glass substrate and the flexible substrate 2 are separated by laser irradiation, but the forming method of the flexible substrate 2 is not limited thereto, and those skilled in the art can select other suitable forming methods according to the teachings of the present invention.
Step 702: a buffer layer 3 is formed on the flexible substrate 2.
In a preferred embodiment, in order to further describe the manufacturing method 7 of the flexible display panel 1 shown in fig. 4, please refer to fig. 5, which shows a schematic flow chart of the step 8 of forming the buffer layer 3 according to three embodiments of the present invention. The step 8 of forming the buffer layer 3 further comprises steps 801 and 802, wherein:
step 801: a silicon nitride (SiN) layer 31 is formed on the flexible substrate 2.
Specifically, the silicon nitride (SiN) layer 31 is formed by depositing silicon nitride (SiN) on the flexible substrate 2 by a deposition method, but not limited thereto.
Step 802: a silicon oxide (SiO) layer 32 is formed on the silicon nitride (SiN) layer 31.
Specifically, the silicon oxide (SiO) layer 32 is formed by depositing silicon oxide (SiO) on the silicon nitride (SiN) layer 31 by a deposition method, but not limited thereto.
Step 703: a device layer 4 is formed on the buffer layer 3.
In a preferred embodiment, to further describe the manufacturing method 7 of the flexible display panel 1 shown in fig. 4, please refer to fig. 6, which shows a flow chart of the step 9 of forming the device layer 4 according to three embodiments of the present invention. Step 9 of forming the device layer 4 further comprises steps 901-907, wherein:
step 901: a polysilicon (Poly) layer 41 is formed on the buffer layer 3, and a desired device pattern is etched on the polysilicon (Poly) layer 41.
Specifically, the polysilicon (Poly) layer 41 is formed by depositing polysilicon (Poly) on the silicon oxide (SiO) layer 32 by a deposition method, and is etched to form a desired device pattern using a mask, but not limited thereto.
Step 902: a Gate Insulation (GI) layer 42 is formed on the polysilicon (Poly) layer 41.
Specifically, the Gate Insulating (GI) layer 42 is formed by depositing SiO and SiN in this order on the silicon oxide (SiO) layer 32 by a deposition method, but not limited thereto.
Step 903: a first metal layer 43 is formed on the Gate Insulation (GI) layer 42.
Specifically, the first Metal layer 43 is formed by depositing a Metal (Metal) on the Gate Insulating (GI) layer 42 by a deposition method, but not limited thereto.
Step 904: an interlayer Insulating (ILD) layer 44 is formed on the first metal layer 43.
Specifically, an interlayer Insulating (ILD) layer 44 is formed on the first metal layer 43 to insulate the first metal layer 43 from the second metal layer 45.
Step 905: a second metal layer 45 is formed on the interlayer Insulation (ILD) layer 44.
Specifically, the second Metal layer 45 is formed by depositing a Metal (Metal) on the interlayer Insulating (ILD) layer 44 by a deposition method, but not limited thereto.
Step 906: a Planarization Layer (PLN)46 is formed on the second metal layer 45.
Specifically, a Planarization Layer (PLN)46 is formed on the second metal layer 45, so that a Thin Film Transistor (TFT) layer formed by the polysilicon (Poly) layer 41, the Gate Insulation (GI) layer 42, the first metal layer 43, the interlayer Insulation (ILD) layer 44 and the second metal layer 45 has a better film coverage capability, but not limited thereto.
Step 907: an Organic Light Emitting Diode (OLED) device layer 4 is formed on the Planarization Layer (PLN) 46.
Specifically, the material of the Organic Light Emitting Diode (OLED) device is sequentially deposited on the flat layer (PLN)46 by a deposition method to form the Organic Light Emitting Diode (OLED) device layer 4, but the present invention is not limited thereto.
Step 702: a support film layer 5 is formed on the device layer 4.
Specifically, a material with certain rigidity and flexibility is selected, for example, the material can be a polyimide same family material, the hardness of the material is greater than that of polyimide, and the flexibility of the material is slightly inferior to that of polyimide; the material can also be polymethyl methacrylate, only the local hardness is slightly higher than that of the flexible substrate, and the flexibility is slightly poor; the flexible substrate may be made of other organic or inorganic materials, and the hardness of the flexible substrate is higher than that of the flexible substrate, and the flexibility of the flexible substrate is slightly inferior to that of the flexible substrate. The material is deposited on the device layer 4 by a deposition method to form the support film layer 5.
Meanwhile, when the supporting film layer 5 is made of different materials, the flexibility resistance of the supporting film layer 5 can be changed by selecting different materials due to the fact that different materials have different flexibility resistances, so that the bending angle of the reinforced flexible display screen 1 (the device layer 4) can be changed, and the bending angle of the flexible display screen 1 (the device layer 4) can be changed through flexible material selection; and the compactness of the composite material can be selected to achieve a certain packaging capacity, so that the composite material has both supporting capacity and packaging capacity.
In another preferred embodiment, in order to further describe the manufacturing method 7 of the flexible display panel 1 shown in fig. 4, please refer to fig. 7, which shows a flow chart of the step 10 of forming the supporting film layer 5 according to three embodiments of the present invention. The step 10 of forming the supporting film layer 5 further comprises steps 101-102, wherein:
step 101: a plurality of openings 48 are formed in the non-subpixel areas of the device layer 4.
Specifically, the openings 48 are formed in the non-sub-pixel areas of the device layer 4 by laser or etching, and the size of the openings 48 and the distance between two adjacent openings 48 are designed according to the bending angle required by the product design, but not limited thereto.
Step 102: the material of the support film 5 is deposited on the device layer 4 to form the support film 5, and the support film 5 is located on the device layer 4 and in the plurality of openings 48.
Specifically, a material with certain rigidity and flexibility is selected, the specific material can be selected according to the bending angle designed by actual requirements and the rigidity and the opening distance of the material, and the material is deposited on the device layer 4 and in the opening 48 by a deposition method to form the support film layer 5.
Step 703: an encapsulation layer 6 is formed on the support film layer 5.
Specifically, the encapsulating layer 6 is formed on the supporting film layer 5, and preferably covers and completely wraps the supporting layer 5 to achieve a better encapsulating effect, but not limited thereto.
In the steps of the manufacturing method 7 of the flexible display screen 1, a person skilled in the art may also select and adjust the corresponding manufacturing step sequence according to the setting position of the supporting film layer 5 according to the teachings of the present invention to implement the manufacturing of different setting positions of the supporting film layer 5, which is substantially the same as the technical solution of the present application and shall also belong to the protection scope of the present application.
The foregoing description shows and describes several preferred embodiments of the invention, but as aforementioned, it is to be understood that the invention is not limited to the forms disclosed herein, but is not to be construed as excluding other embodiments and is capable of use in various other combinations, modifications, and environments and is capable of changes within the scope of the inventive concept as expressed herein, commensurate with the above teachings, or the skill or knowledge of the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (12)
1. A flexible display screen, comprising:
a flexible substrate;
a buffer layer disposed on the flexible substrate;
a device layer disposed on the buffer layer;
a support film layer disposed on the device layer; and
and the packaging layer is arranged on the supporting film layer.
2. The flexible display screen of claim 1, wherein the flexible substrate is made of Polyimide (PI).
3. The flexible display of claim 1, wherein the buffer layer further comprises:
a silicon nitride layer disposed on the flexible substrate; and
and the silicon oxide layer is arranged on the silicon nitride layer, and the device layer is arranged on the silicon oxide layer.
4. The flexible display of claim 1, wherein the device layer further comprises:
the polycrystalline silicon layer is arranged on the buffer layer;
a gate insulating layer disposed on the polysilicon layer;
a first metal layer disposed on the gate insulating layer;
an interlayer insulating layer disposed on the first metal layer;
a second metal layer disposed on the interlayer insulating layer;
the flat layer is arranged on the second metal layer; and
the organic light emitting diode device layer is arranged on the flat layer, and the supporting film layer is arranged on the flat layer.
5. The flexible display screen of claim 1, wherein the device layer further comprises a plurality of openings, the plurality of openings are located in non-sub-pixel regions of the device layer, and the support film layer is located on the device layer and in the plurality of openings.
6. The flexible display screen of claim 1, wherein the support film layer is made of polyimide-like material or polymethyl methacrylate.
7. A manufacturing method of a flexible display screen is characterized by comprising the following steps:
forming a flexible substrate;
forming a buffer layer on the flexible substrate;
forming a device layer on the buffer layer;
forming a supporting film layer on the device layer; and
and forming an encapsulation layer on the support film layer.
8. A method for manufacturing a flexible display screen according to claim 7, wherein the step of forming the buffer layer further comprises:
forming a silicon nitride layer on the flexible substrate; and
and forming the silicon oxide layer on the silicon nitride layer.
9. A method for manufacturing a flexible display screen according to claim 7, wherein the step of forming the device layer further comprises:
forming the polycrystalline silicon layer on the buffer layer, and etching a required device pattern on the polycrystalline silicon layer;
forming a gate insulating layer on the polysilicon layer;
forming a first metal layer on the gate insulating layer;
forming an interlayer insulating layer on the first metal layer;
forming a second metal layer on the interlayer insulating layer;
forming a flat layer on the second metal layer; and
and forming an organic light-emitting diode device layer on the flat layer.
10. A method for manufacturing a flexible display screen according to claim 7, wherein the step of forming a supporting film layer further comprises:
forming a plurality of openings on the non-sub-pixel region of the device layer; and
and depositing the material of the support film layer on the device layer to form the support film layer, and enabling the support film layer to be positioned on the device layer and in the plurality of openings.
11. The method of claim 10, wherein the opening is performed in the non-subpixel area of the device layer by laser or etching.
12. The method for manufacturing the flexible display screen according to claim 10, wherein the material of the supporting film layer is polyimide-like material or polymethyl methacrylate.
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