CN111747374A - Micromechanical component and method for forming a layer structure - Google Patents
Micromechanical component and method for forming a layer structure Download PDFInfo
- Publication number
- CN111747374A CN111747374A CN202010223048.4A CN202010223048A CN111747374A CN 111747374 A CN111747374 A CN 111747374A CN 202010223048 A CN202010223048 A CN 202010223048A CN 111747374 A CN111747374 A CN 111747374A
- Authority
- CN
- China
- Prior art keywords
- layer
- region
- annular
- filling
- sub
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000463 material Substances 0.000 claims abstract description 127
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 230000007704 transition Effects 0.000 claims abstract description 13
- 239000000945 filler Substances 0.000 claims description 33
- 229910052710 silicon Inorganic materials 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 10
- 238000009616 inductively coupled plasma Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 294
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 13
- 238000005530 etching Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 239000004020 conductor Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000007373 indentation Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- -1 argon ions Chemical class 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 241000208967 Polygala cruciata Species 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00158—Diaphragms, membranes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/007—For controlling stiffness, e.g. ribs
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00349—Creating layers of material on a substrate
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
- B81B2201/042—Micromirrors, not used as optical switches
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0161—Controlling physical properties of the material
- B81C2201/0163—Controlling internal stress of deposited layers
- B81C2201/0167—Controlling internal stress of deposited layers by adding further layers of materials having complementary strains, i.e. compressive or tensile strain
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Micromachines (AREA)
Abstract
The invention relates to a micromechanical component and a method for forming a layer structure. In particular, the invention relates to a micromechanical component having a substrate; a first layer (10) made of at least one first material, having at least one protruding subregion (10 a) oriented parallel to a sub-surface (12 a) of the substrate (12), the protruding subregions (10 a) being connected in each case by in each case one transition region (10 b) of the first layer (10) surrounding the respective protruding subregion (10 a) to at least one retracted subregion (10 c) of the first layer (10) oriented parallel to the sub-surface (12 a) of the substrate (12); a second layer (28) formed of a second material that is the same as or different from the first material; and an annular filling region (26 a) formed from a filling material surrounding each of the at least one transition region (10 c) of the first layer (10), the annular filling region (26 a) being hermetically surrounded by the first layer (10) and the second layer (28), wherein the thermal and/or intrinsic internal stress of the filling material of the at least one annular filling region (26 a) differs from the thermal and/or intrinsic internal stress of the second material.
Description
Technical Field
The present invention relates to micromechanical components. The invention also relates to a method of forming a layered structure.
Background
DE 102007051537B 4 describes optical multilayer mirrors which are said to be usable, for example, as Fabry-Perot interferometers. The multilayer optical mirror includes a lower mirror (Spiegel) formed over a substrate and an upper mirror, wherein the upper mirror is separated from the lower mirror by a gap. Both the lower mirror and the upper mirror each have a layer of a high-refractive-index material, which has at least one convex subregion oriented parallel to the sub-surface of the substrate, which convex subregions are each connected to at least one retracted subregion oriented parallel to the sub-surface of the substrate by a respective transition region surrounding the respective convex subregion.
Disclosure of Invention
DISCLOSURE OF THE INVENTION
The invention achieves a micromechanical component having the features of claim 1 and a method of forming a layer structure having the features of claim 6.
Advantages of the invention
The invention provides a layer structure or a micromechanical component equipped with the layer structure, which can be used in various ways, for example as a membrane system or as a mirror layer system. In addition, the total layer thickness of such a layer structure can be from 10nm to several micrometers and at the same time has advantageous internal stresses due to its design according to the invention. In particular, the invention enables "local support sites" to be formed in a layer structure which is otherwise monomorphically formed: so that the internal stresses of the layer structure can be set in a targeted manner via "local support points", which can also be referred to as "stress concentration points" or "stress concentration structures". The layer structure which can be produced by means of the invention is therefore advantageously suitable for a multiplicity of application purposes.
A particular advantage of the invention is that the layer structure according to the invention can have a first layer and a second layer formed from the same material and still the resulting total stress of the layer structure according to the invention can be adjusted as desired by means of the at least one annular filling region. Although conventionally a combination of at least two different materials with different internal stresses has to be used for the first and second layer in order to adjust to the desired resulting total stress by an advantageous combination of materials, it is not necessary to use at least two different materials for the first and second layer of the layer structure according to the invention. It is also not necessary to adjust the overall stress of the layer structure as desired by means of a thermal post-treatment. The conventional problems of the production of layer systems according to the prior art are thereby avoided when using the invention.
In an advantageous embodiment of the micromechanical component, the thermal and/or intrinsic internal stress of the filling material of the at least one annular filling region differs in this way from the thermal and/or intrinsic internal stress of the second material: such that the filler material of the at least one annular filler region causes a tensile stress to the second layer formed of the second material. The invention is therefore particularly advantageously suitable for setting a sufficient tensile stress in a layer structure comprising at least a first layer, a second layer and the at least one annular filling region. In addition, when the required tensile stress is set as described here, it is ensured that the tensile stress causes no/hardly any deformation of the layer structure, which partially compensates for the effective internal stress.
For example, the second layer may be formed of silicon as the second material. Also, the at least one annular fill region may be formed of a silicon and oxygen containing material as a fill material. This combination of at least the second material of the second layer and the filler material of the at least one annular filler region enables the desired tensile stress to be adjusted without problems.
In particular, the at least one annular filling region may be formed of silicon dioxide or tetraethyl orthosilicate as a filling material. Thus, the at least one annular fill region may be formed from a fill material using methods that are typically advantageously implemented in semiconductor technology.
In an embodiment of the micromechanical component that can be used advantageously, the layer structure formed by the first layer, the second layer and the at least one annular filling region is at least part of a Bragg reflector (Bragg-Reflektors) and/or a fabry-perot interferometer. It is noted, however, that the usability of the layer structure described herein is not limited to these application purposes.
In an advantageous embodiment of the method for forming a layer structure, the filling material is deposited on the first layer in a force-and form-fitting manner in order to form the at least one annular filling region. This enables the at least one annular filling zone to act as a "locally adjustable support position" due to its different thermal and/or intrinsic internal stress compared to the material/materials of the first and second layers to adjust the desired resulting total stress to the layer structure.
To form the at least one annular fill region, a fill material is preferably deposited on the first layer by means of a high temperature oxidation process or tetraethylorthosilicate deposition. The filling material of the at least one annular filling region can thus be deposited in a method which is cost-effective and reliable.
More preferably, to form the at least one annular fill region, the fill material is deposited on the first layer by: such that the surface of the first layer facing away from the substrate is at least partially covered by a layer of filler material formed from the filler material. The at least one annular fill region is then constructed from the layer of fill material by an isotropic, maskless, dry etching step. In particular, the at least one annular fill region may be structured from the layer of fill material by means of an inductively coupled plasma in an isotropic, maskless, dry etching step. The manner of operation described herein of forming the at least one annular filler region from filler material ensures that it is advantageously adapted to accommodate the desired resulting total stress to the finished layer structure.
Drawings
Further features and advantages of the invention are explained below with the aid of the figures. Wherein:
FIGS. 1a to 1d show schematic cross-sections for explaining one embodiment of a method of forming a layer structure, and
fig. 2 shows a schematic partial view of an embodiment of the micromechanical component.
Detailed Description
Fig. 1a to 1d show schematic cross-sections for illustrating one embodiment of a method of forming a layer structure.
In carrying out the method, the first layer 10 of the layer structure (to be described later) is formed on and/or over the sub-surface 12a of the substrate 12. The substrate 12 may be a semiconductor substrate, such as a silicon substrate. However, instead of or in addition to silicon, the substrate 12 may also comprise at least one other semiconductor material, at least one metal and/or at least one electrically insulating material.
In the embodiment described here, the first layer 10 is not deposited directly on the sub-surface 12a of the substrate 12, but rather a so-called "substructure" of the layer structure (to be later) is first formed on the sub-surface 12a of the substrate 12. The "substructure" comprises, for example, a first oxide layer 14a, at least one conductor circuit 16 and a second oxide layer 14 b. The first oxide layer 14a at least partially covering the sub-surface 12a of the substrate 12 may for example be formed as a thermally oxidized silicon layer. The at least one conductor circuit 16 may be constructed from a polysilicon layer deposited on the first oxide layer 14 a. The second oxide layer 14b may then be deposited on the at least one conductor circuit 16 and at least one exposed surface (freiliegendan Fl ä che) of the first oxide layer 14 a. In the embodiment described here, the at least one through (durchgehende) opening 18 is also formed, for example, by the second oxide layer 14b, in such a way that at least one sub-surface of the at least one conductor track 16 is exposed. The at least one via 18 can be used for at least one electrical contact between the at least one conductor circuit 16 and the layer structure, respectively. It is noted, however, that the "infrastructure" components 14a, 14b, and 16 and the structure 18 described herein should be construed as exemplary only.
In the embodiments described herein, the layer structure is part of a bragg reflector of a fabry-perot interferometer. Therefore, before forming the layer structure, the high refractive index layer 20 of the (later) bragg reflector of the fabry-perot interferometer is first formed. To this end, a high refractive index layer 20 is deposited on the outer surface of the second oxide layer 14b (and possibly on the bottom and wall surfaces of the at least one consecutive indentation 18). The high refractive index layer 20 may be, for example, a doped polysilicon layer. The high-refractive-index layer 20 can be produced in particular by means of chemical vapor deposition at low pressure (i.e. by means of LPCVD methods, low-pressure chemical vapor deposition). However, as with the formation of the "substructure", the formation of high refractive index layer 20 is also an optional method step. If the high refractive index layer 20 is formed, a subsequently deposited layer structure may cause bragg reflection as an additional high refractive index layer together with the high refractive index layer 20.
In order to specify the gap width of at least one gap which is present later between the high refractive index layer 20 and the layer structure, a sacrificial layer 22 is deposited on the outer surface of the high refractive index layer 20 facing away from the substrate 12. The gap width defined by the sacrificial layer 22 may be, for example, 200nm (nanometers) to 500nm (nanometers). The sacrificial layer 22 is preferably an oxide layer that can be easily removed by a later etching step. For depositing the sacrificial layer 22, a chemical vapor deposition may also be performed at low pressure, such as, in particular, a High Temperature Oxidation Process (HTO Process) or a tetraethylorthosilicate deposition (i.e., TEOS deposition).
In the deposited sacrificial layer 22, at least one continuous recess 24 is formed, which partially exposes the outer side of the high refractive index layer 20 facing away from the substrate 12. As explained in more detail below, the at least one consecutive (durchgehende) notch 24, which is formed by the sacrificial layer 22, defines the location of a later "local support location" of the layer structure. The at least one consecutive indentation 24 formed by the sacrificial layer 22 is preferably formed with a vertical profile. If the at least one continuous (durchgehende) gap 18 is formed by the second oxide layer 14b, it is preferred that the sacrificial layer 22 is also removed in the at least one continuous gap 18 and possibly in adjacent regions, so that the outer side of the high refractive index layer 20 is locally exposed. As a method for constructing the sacrificial layer 22, for example, photolithography can be performed. The photoresist (Photolack), not shown in FIG. 1a, used as an etch mask during photolithography can then be removed. Optionally, a cleaning step may also be performed after the sacrificial layer 22 is constructed.
A first layer 10 of a (later) layer structure may then be deposited on the remaining parts of the sacrificial layer 22 and on the partially exposed outer side of the high refractive index layer 20. In this way, a first layer is formed with at least one convex subregion 10a oriented parallel to the sub-surface 12a of the substrate, wherein the at least one convex subregion 10a is connected in each case by a respective one transition region 10b of the first layer 10 surrounding the respective convex subregion 10a to at least one retracted subregion 10c of the first layer 10 oriented parallel to the sub-surface 12a of the substrate 12. If the at least one consecutive indentation 24 constructed from the sacrificial layer 22 has a (substantially) vertical profile, the at least one transition region 10b of the first layer 10 extends (almost) perpendicular to the sub-surface 12a of the substrate 12 from its protruding sub-region 10a to the assigned retracted sub-region 10 c.
The first layer 10 is understood to be a hermetically sealing (gas-impermeable) layer. The first layer thickness d1 of the first layer 10 oriented perpendicularly to the partial surface 12a of the substrate 12 is advantageously (almost) equal to the minimum total layer thickness d of the (later) layer structure oriented perpendicularly to the partial surface 12a of the substrate 12General assemblyHalf of that. The first layer thickness d1 of the first layer 10 is, for example, 10nm (nanometers) to 100nm (nanometers). Advantageous materials for forming the first layer 10 will also be discussed below when referring to the interaction of the first layer 10 with other components of the layer structure (later).
After forming the first layer 10, one annular fill region 26a each is formed surrounding the at least one transition region 10b of the first layer 10. The at least one annular filling region 26a is preferably formed by only one (single) filling material. In the example of fig. 1a to 1d, to form the at least one annular filling region 26a, its filling material is deposited on the first layer 10: so that the surface of the first layer 10 facing away from the substrate 12 is at least partially/preferably completely covered by a layer 26 of filler material formed by the filler material of the at least one (later) annular filler region 26 a. It may often be advantageous to use the same material as used for the sacrificial layer 22 as the filler material for the at least one (later) annular fill region 26 a. However, in principle there is a process freedom and it is also possible to use different materials for the at least one annular filling region 26a and the sacrificial layer 22. Advantageous examples of the filling material of the at least one annular filling zone 26a are also described below.
The layer 26 of filler material is preferably deposited on the first layer 10 in a force-and form-fitting manner (kraft-und formschlussig). To deposit the layer 26 of filler material, chemical vapor deposition may be performed, for example, at low pressure. In particular, the layer of filler material 26 may be deposited on the first layer 10 by means of a high temperature oxidation process or tetraethylorthosilicate deposition. Fig. 1a shows the layer system after deposition of the layer 26 of filler material.
Fig. 1b shows the layer system after structuring of the at least one annular filling region 26a from the layer 26 of filling material. In the formation of the at least one annular filling region 26a, preferably only the filling material of the filling material layer 26 adjacent to the at least one transition region 10b of the first layer 10 is not removed. In this way, an approximate "ring structure" or "toroidal shape" of the at least one annular fill region 26a is obtained.
The at least one annular fill region 26a is preferably constructed by means of an isotropic, maskless, dry etching step. This isotropic, maskless, dry etching step may be performed, for example, in an ICP etching apparatus, such that the at least one annular fill region 26a is constructed by means of an inductively coupled plasma. An ICP Etching apparatus may be understood as an apparatus designed for Reactive-Ion Etching (Reactive-Ion Etching) by means of Inductively Coupled Plasma (Inductively Coupled Plasma). In carrying out such an etch, etch parameters such as the etch gas and plasma power used may be specified as follows: so that there is a good selectivity between the predominantly etched layer 26 of filler material and the unetched/hardly etched first layer 10. The etching gas used can act on the layer 26 of filling material like an "ion bombardment", wherein a good selectivity ensures at the same time a negligible risk of over-etching the first layer 10. The progress of etching performed in the ICP etching apparatus can be detected, for example, by means of optical endpoint recognition, so that etching can be ended at an appropriate point in time.
Alternatively, the at least one annular filling region 26a may also be structured by means of etching by using argon ions. Since the argon ions have a relatively low selectivity with respect to the layer of filler material 26 which is to be etched predominantly compared to the layer of first layer 10 which is not to be etched/is to be etched hardly, the layer of filler material 26 can also be constructed maskless by means of etching by using argon ions, while tolerating a small amount of stripping of the layer of first layer 10. In this case, the first layer 10 can be deposited correspondingly thicker than its desired first layer thickness d1 in advance, so that the desired first layer thickness d1 of the first layer 10 is not present until after the maskless configuration of the filler-material layer 26.
As shown in fig. 1c, the surface of the first layer 10 facing away from the substrate 12 is then at least partially covered again by the second layer 28 of the layer structure. The second layer 28 is preferably understood to be a layer formed of only one (single) material. Fig. 1c shows a layer structure formed by the first layer 10, the second layer 28 and the at least one annular filling region 26a, which is anchored in particular at the respective position of the at least one consecutive indentation 24 on the high refractive index layer 22. The respective position of the at least one continuous recess 24 thus defines a later local support position 30 of the layer structure on the high-refractive-index layer 22.
The second layer 28 may be deposited, for example, by chemical vapor deposition at low pressure. To deposit the second layer 28, the same deposition method as that for forming the first layer 10 may be performed. The thickness d2 of the second layer 28 of the second layer oriented perpendicularly to the sub-surface 12a of the substrate 12 is preferably 10nm (nanometers) to 100nm (nanometers). The second layer thickness d2 of the second layer 28 may in particular be (almost) equal to the minimum total layer thickness d of the layer structure oriented perpendicular to the sub-surface 12a of the substrate 12General assemblyHalf of that. Thus, the minimum total layer thickness d of the layer structureGeneral assemblyPreferably the sum of the first layer thickness d1 of the first layer 10 and the second layer thickness d2 of the second layer 28.
The second layer 28 is understood to be a gas-tight (gas-impermeable) layer. Since the at least one annular filling region 26a is formed before the surface of the first layer 10 facing away from the substrate 12 is at least partially covered with the second layer 28, the at least one annular filling region 26a is hermetically surrounded by the first layer 10 and the second layer 28 after the first layer 10 is at least partially covered with the second layer 28. Since the at least one annular filling region 26a is formed in a force-and form-fitting manner on the first layer 10 and is surrounded in a gas-tight manner by the first layer 10 and the second layer 28, the mechanical stresses occurring in the at least one annular filling region 26a are predominantly introduced into the second layer 28. Thus, the at least one annular filler region 26a may be used to introduce compressive or tensile stress into the second layer 28.
In order to introduce compressive or tensile stresses into the second layer 28 by means of the at least one annular filling region 26a, it is therefore (substantially) only necessary to make the material of the second layer 28 different from the filling material of the at least one annular filling region 26 a. The achievement of the required compressive or tensile stress in particular requires only that the at least one annular filling region 26a is formed by a filling material whose thermal and/or intrinsic internal stress differs correspondingly from the thermal and/or intrinsic internal stress of the material of the second layer 28.
A layer of semiconductor material is generally preferred as the second layer 28 because such a layer of semiconductor material is suitable for a variety of application purposes. The second layer 28 may be, for example, a silicon layer, such as in particular a polysilicon layer. A cost-effective, easily deposited, easily constructed and versatile material can thus be used for the second layer 28. In order to cause the required compressive or tensile stress to the second layer 28, it is (substantially) sufficient that the thermal and/or intrinsic internal stress of the filling material of the at least one annular filling region 26a differs from the thermal and/or intrinsic internal stress of the silicon/polysilicon in this way: such that the at least one annular fill region 26a introduces a desired compressive or tensile stress into the second layer 28. In particular in the case of a second layer 28 formed from silicon/polysilicon, a favorable tensile stress can be introduced into the second layer 28, for example by means of the at least one annular filling region 26a, as long as the at least one annular filling region 26a is formed from (thermal) silicon dioxide as filling material, LPCVD oxide (low-pressure chemical vapor deposition) or an oxide formed by chemical vapor deposition at low pressure, or tetraethylorthosilicate. However, the material combination of silicon/polysilicon for the second layer 28 and (thermal) silicon dioxide or tetraethylorthosilicate as a filling material for introducing a favorable tensile stress into the at least one annular filling region 26a in the second layer 28 described herein should only be construed as exemplary. It is important for the desired effect to be achieved by the material combination of the second layer 28 and the filler material that the thermal and/or intrinsic internal stresses of the filler material differ from the corresponding material properties of the second layer 28.
The first layer 10 may optionally be formed of the same material as the second layer 28 or of a material not included in the second layer 28. It is explicitly noted here that if the first layer 10 is of the same material as the second layer 28, the required compressive or tensile stress in the second layer 28 can also be caused (only) by means of the at least one annular filling region 26 a. Thus, forming the at least one annular filler region 26a between the layers 10 and 28 increases the freedom of choice in the choice of material for the first layer 10. The first layer 10 is preferably a layer of semiconductor material. The first layer 10 may for example be a silicon layer, such as in particular a polysilicon layer, so that the advantages of silicon/polysilicon are also available for the first layer 10. It is to be noted, however, that the material of the first layer 10 can be chosen relatively freely. The first layer 10 and the second layer 28 can therefore be, without any problem, a "single layer (Einzellagen)" in a "double layer (Doppelschicht)" formed from the same material, wherein nevertheless the required compressive and/or tensile stress can be caused at least in the second layer 28 by means of the at least one annular filling region 26 a. Thus, if the first layer 10 and the second layer 28 can generally only be formed from the same material and nevertheless it is necessary to cause compressive or tensile stress at least in the second layer 28, the techniques described herein are also advantageously suitable for having a relatively small minimum overall layer thickness dGeneral assemblyThe layer structure of (2).
The sacrificial layer 22 is then selectively removed. The oxide layer used as the sacrificial layer 22 may be removed, for example, by means of an isotropic HF vapor method (i.e., by a vapor method using hydrogen fluoride). If desired, regions of the first oxide layer 14a and the second oxide layer 14b can also be removed together with the sacrificial layer 22, so that the self-supporting region 32 of the overall layer system formed by the high refractive index layer 20 and the layer structure (formed by the first layer 10, the second layer 28 and the at least one annular filling region 26 a) can be freed (freestellen). It may also be possible to at least partially remove substrate material of the substrate 12 that is spanned by the free-standing regions 32. In this case, however, the overall layer system is also mechanically firmly anchored to the substrate 12 at the location of the at least one continuous via 18, at which at least one electrical contact between the at least one conductor circuit 16 and the overall layer system is present at the location of the at least one continuous via 18.
Due to the force-and form-fitting deposition of the filling material of the at least one annular filling region 26a on the first layer 10, the removal of the sacrificial layer 22 does not influence (substantially does not influence) the shape of the first layer 10. Therefore, after the removal of the sacrificial layer 22, there is no/little fear of unwanted deformation of the first layer 10.
Since the two layers 10 and 28 hermetically surround the at least one annular filling region 26a, the filling material of the at least one annular filling region 26a can exert mechanical stress on the contact region of the second layer 28, in particular at the at least one local support location 30. Thus, at the at least one local support location 30, the filler material of the at least one annular filler region 26a may specifically couple intrinsic and/or thermal internal stresses into the second layer 28 of the layer structure. By suitably selecting the intrinsic and/or thermal internal stress of the filler material of the at least one annular filler region 26a compared to the material of the at least second layer 28, a tensile stress can be coupled in particular into the at least second layer 28, as is shown figuratively by the arrow 34 in fig. 1 d. Thus, the at least one local support location 30 may be embedded in the layer structure as a stress concentration point or stress concentration structure, respectively. This effect is enhanced if the at least one local support location 30 is formed within the self-supporting area 32 of the overall layer system.
Fig. 2 shows a schematic partial view of an embodiment of the micromechanical component.
The micromechanical component partially shown in fig. 2 corresponds to the embodiment schematically depicted in fig. 1 d. The micromechanical component has a substrate 12 (not shown), the orientation of its sub-surface 12a being indicated in fig. 2 by means of a dashed line 12 a. A first layer 10 formed of at least one first material is arranged on a sub-surface 12a of the substrate 12. The first layer 10 may be supported or anchored on a sub-surface 12a of the substrate 12, for example as shown in fig. 1 d. The first layer 10 has at least one convex subregion 10a oriented parallel to the sub-surface 12a of the substrate 12, which is connected in each case via a respective transition region 10b of the first layer 10 surrounding the respective convex subregion 10a to at least one retracted subregion 10c of the first layer 10 oriented parallel to the sub-surface 12a of the substrate 12. A second layer 28, formed of a second material that is the same or different from the first material, at least partially covers the surface of the first layer 10 facing away from the substrate 12. The second layer 28 is preferably understood to be a layer formed solely of the second material.
Furthermore, the micromechanical component has an annular filling region 26a of a filling material surrounding each of the at least one transition region 10b of the first layer 10, which is surrounded in a gas-tight manner by the first layer 10 and the second layer 28. The at least one annular filler region 26a is preferably formed entirely of the filler material alone. The thermal and/or intrinsic internal stress of the filling material of the at least one annular filling region 26a differs from the thermal and/or intrinsic internal stress of the second material, so that in the case of the micromechanical component of fig. 2 also compressive or tensile stresses are introduced in particular into the second layer 28 by means of the at least one annular filling region 26 a. In the case of the micromechanical component of fig. 2, the at least one local support location 30 may therefore also be referred to as a stress concentration point 36 or stress concentration structure.
As schematically depicted in fig. 2 by means of the arrow 34, in the embodiment described here, the thermal and/or intrinsic internal stress of the filling material of the at least one annular filling region 26a differs in this way from the thermal and/or intrinsic internal stress of the second material of the second layer 28: such that the filler material of the at least one annular filler region 26a causes a tensile stress to the second layer 28. Also exemplarily shown in fig. 2 is a stress concentration point 36, which is caused by the internal stress of the adjacent annular filling region 26a and by means of which in particular the second layer 28 "is tensioned like a drumhead". The layer stress to be coupled into the second layer 28 can be freely adjusted within a certain range by means of the internal stress of the adjacent annular filling region 26 a. At the same time, deformation of the first layer 10 (and accordingly also of the high-refractive-index layer 20) is prevented as a result of the force-and form-fitting connection of the at least one annular filling region 26a to the first layer.
Exemplary is a second layer 28 formed of silicon as a second material and the at least one annular fill region 26a formed of a silicon and oxygen containing material as a fill material. In particular, the at least one annular filling region 26a may be formed of silicon dioxide or tetraethyl orthosilicate as a filling material. As described above, the first layer 10 can be formed of the same material as the second layer 28 without any problem. The layer structure formed by the first layer 10, the second layer 28 and the at least one annular filling region 26a can thus be a "monomodal" layer structure, wherein the internal stresses of the layer structure can nevertheless be specifically set by means of the at least one annular filling region 26 a. As the at least one local support location 30, a network of local support locations 30 may also mechanically and electrically connect the layer structure and the high refractive index layer 20 to each other. According to an embodiment, for example, 10 to 1000 local support locations 30 may be formed.
The high refractive index layer 20 and the layer structure formed by the first layer 10, the second layer 28 and the at least one annular filling region 26a together function as a bragg reflector of a fabry-perot interferometer. As shown in fig. 1d, the high refractive index layer 20 and the layer structure cooperating therewith are suspended from the sub-surface 12a of the substrate 12. The high refractive index layer 20 and a part of the layer structure thus form a self-supporting region 32 of the overall layer system formed by the high refractive index layer 20 and the layer structure. The dimension of the free-standing region 32 parallel to the sub-surface 12a of the substrate 12 can be up to a few millimeters without problems. Separately from the overall layer system formed by the high-refractive-index layer 20 and the layer structure, a further bragg reflector of the fabry-perot interferometer may also be arranged.
With regard to other characteristics and features of the micromechanical component of fig. 2, reference is made to the aforementioned fig. 1a to 1 d.
Claims (10)
1. A micromechanical component having:
a substrate (12); and
a first layer (10) of at least one first material arranged on a sub-surface (12 a) of the substrate (12), the first layer (10) having at least one projecting sub-region (10 a) oriented parallel to the sub-surface (12 a) of the substrate (12), the projecting sub-regions (10 a) being connected in each case by in each case one transition region (10 b) of the first layer (10) around the respective projecting sub-region (10 a) to at least one retracted sub-region (10 c) of the first layer (10) oriented parallel to the sub-surface (12 a) of the substrate (12);
it is characterized in that
A second layer (28) made of a second material that is the same as or different from the first material, the second layer (28) at least partially covering a surface of the first layer (10) facing away from the substrate (12); and
-each one of said at least one transition region (10 c) surrounding the first layer (10) is an annular filling region (26 a) formed by a filling material, wherein said at least one annular filling region (26 a) is hermetically enclosed by the first layer (10) and the second layer (28), and wherein the thermal and/or intrinsic internal stress of the filling material of said at least one annular filling region (26 a) is different from the thermal and/or intrinsic internal stress of the second material.
2. Micromechanical component according to claim 1, wherein the thermal and/or intrinsic internal stress of the filling material of said at least one annular filling region (26 a) differs from the thermal and/or intrinsic internal stress of the second material in such a way that: such that the filler material of the at least one annular filler region (26 a) causes a tensile stress to the second layer (28) formed of the second material.
3. Micromechanical component according to claim 1 or 2, wherein the second layer (28) is formed of silicon as a second material and the at least one annular fill region (26 a) is formed of a material containing silicon and oxygen as a fill material.
4. Micromechanical component according to claim 3, wherein the at least one annular filling region (26 a) is formed from silicon dioxide or tetraethylorthosilicate as filling material.
5. Micromechanical component according to one of the preceding claims, wherein the layer structure formed by the first layer (10), the second layer (28) and the at least one annular filling region (26 a) is at least part of a bragg reflector and/or a fabry-perot interferometer.
6. Method of forming a layer structure, having the steps of:
forming a first layer (10) of the layer structure from at least one first material on and/or over a sub-surface (12 a) of the substrate (12), wherein a first layer (10) is formed having at least one projecting sub-region (10 a) oriented parallel to the sub-surface (12 a) of the substrate (12), the projecting sub-regions (10 a) being connected in each case by a respective transition region (10 b) of the first layer (10) around the respective projecting sub-region (10 a) to at least one retracted sub-region (10 c) of the first layer (10) oriented parallel to the sub-surface (12 a) of the substrate (12);
it is characterized by the following steps:
forming one annular fill region (26 a) each surrounding said at least one transition region (10 c) of the first layer (10); and
at least partially covering the surface of the first layer (10) facing away from the substrate (12) with a second layer (28) formed of a second material, which is the same or different from the first material, so that the at least one annular filling region (26 a) is hermetically surrounded by the first layer (10) and the second layer (28);
wherein the at least one annular filling region (26 a) is formed from a filling material having a thermal and/or intrinsic internal stress different from a thermal and/or intrinsic internal stress of the second material.
7. Method according to claim 6, wherein the filling material is deposited on the first layer (10) in a force-and form-fitting manner in order to form the at least one annular filling zone (26 a).
8. Method according to claim 6 or 7, wherein for forming said at least one annular filling region (26 a) said filling material is deposited on the first layer (10) by means of a high temperature oxidation method or tetraethylorthosilicate deposition.
9. Method according to one of claims 6 to 8, wherein for forming the at least one annular filling region (26 a) the filling material is deposited on the first layer (10) in such a way that a surface of the first layer (10) facing away from the substrate (12) is at least partially covered by a layer (26) of filling material formed from the filling material, and wherein the at least one annular filling region (26 a) is constructed from the layer (26) of filling material by means of an isotropic, maskless, dry etching step.
10. The method according to claim 9, wherein the at least one annular fill region (26 a) is structured from the layer of fill material (26) by means of an inductively coupled plasma in an isotropic, maskless, dry etching step.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102019204207.4A DE102019204207A1 (en) | 2019-03-27 | 2019-03-27 | Micromechanical component and method for forming a layer structure |
| DE102019204207.4 | 2019-03-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111747374A true CN111747374A (en) | 2020-10-09 |
Family
ID=72612399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010223048.4A Pending CN111747374A (en) | 2019-03-27 | 2020-03-26 | Micromechanical component and method for forming a layer structure |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN111747374A (en) |
| DE (1) | DE102019204207A1 (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101087999A (en) * | 2004-12-22 | 2007-12-12 | 罗伯特·博世有限公司 | Micromechanical capacitive sensor element |
| CN102826502A (en) * | 2011-06-16 | 2012-12-19 | 英飞凌科技股份有限公司 | MEMS devices and methods of fabrication thereof |
| US20130143377A1 (en) * | 2010-06-08 | 2013-06-06 | International Business Machines Corporation | Structure and method for replacement gate mosfet with self-aligned contact using sacrificial mandrel dielectric |
| US20130178041A1 (en) * | 2010-11-15 | 2013-07-11 | International Business Machines Corporation | Back-end-of-line planar resistor |
| CN104576535A (en) * | 2013-10-22 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI96450C (en) * | 1993-01-13 | 1996-06-25 | Vaisala Oy | Single-channel gas concentration measurement method and equipment |
| KR100383498B1 (en) * | 1996-08-30 | 2003-08-19 | 산요 덴키 가부시키가이샤 | Fabrication method of semiconductor device |
| US5898221A (en) * | 1996-09-27 | 1999-04-27 | Sanyo Electric Company, Ltd. | Semiconductor device having upper and lower wiring layers |
| JP2012026856A (en) * | 2010-07-23 | 2012-02-09 | Hitachi Automotive Systems Ltd | Thermal type air flow rate sensor |
-
2019
- 2019-03-27 DE DE102019204207.4A patent/DE102019204207A1/en not_active Withdrawn
-
2020
- 2020-03-26 CN CN202010223048.4A patent/CN111747374A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101087999A (en) * | 2004-12-22 | 2007-12-12 | 罗伯特·博世有限公司 | Micromechanical capacitive sensor element |
| US20130143377A1 (en) * | 2010-06-08 | 2013-06-06 | International Business Machines Corporation | Structure and method for replacement gate mosfet with self-aligned contact using sacrificial mandrel dielectric |
| US20130178041A1 (en) * | 2010-11-15 | 2013-07-11 | International Business Machines Corporation | Back-end-of-line planar resistor |
| CN102826502A (en) * | 2011-06-16 | 2012-12-19 | 英飞凌科技股份有限公司 | MEMS devices and methods of fabrication thereof |
| CN104576535A (en) * | 2013-10-22 | 2015-04-29 | 中芯国际集成电路制造(上海)有限公司 | Method for manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| DE102019204207A1 (en) | 2020-10-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6582985B2 (en) | SOI/glass process for forming thin silicon micromachined structures | |
| JP2013506154A (en) | Micromechanical tunable Fabry-Perot interferometer and manufacturing method thereof | |
| JP2011017693A (en) | Semiconductor dynamic quantity sensor and method of manufacturing the same | |
| JP5268112B2 (en) | Dry etching method | |
| US8592228B2 (en) | Sealing structure and method of manufacturing the same | |
| US6790698B2 (en) | Process for integrating dielectric optical coatings into micro-electromechanical devices | |
| US6761829B2 (en) | Method for fabricating an isolated microelectromechanical system (MEMS) device using an internal void | |
| KR102008189B1 (en) | Strengthened micro-electromechanical system devices and methods of making thereof | |
| JP2005504644A (en) | Method for forming cavity structure in SOI substrate and cavity structure formed in SOI substrate | |
| JP6046443B2 (en) | Manufacturing method of micromirror device | |
| US6187607B1 (en) | Manufacturing method for micromechanical component | |
| CN109151690B (en) | Method for manufacturing microphone | |
| CN111747374A (en) | Micromechanical component and method for forming a layer structure | |
| JP4603641B2 (en) | Manufacturing method of components of micromachine | |
| JP2002200599A (en) | Producing method for three-dimensional structure | |
| JP2000058866A (en) | Manufacture of small device | |
| JP2014086467A (en) | Semiconductor device manufacturing method and semiconductor device | |
| JP2015004886A (en) | Fabry-perot filter, fabry-perot interferometer with the same, and method of manufacturing fabry-perot filter | |
| US6969628B2 (en) | Microstructure and method for the production thereof | |
| CN112512958A (en) | Method for manufacturing etch stop layer and MEMS sensor including etch stop layer | |
| CN114823322A (en) | Method for forming a trench in a first semiconductor layer of a multilayer system | |
| TWI432377B (en) | Verfahren zur herstellung von mikromechanischen strukturen mit reliefartigem seitenwandverlauf oder einstellbarem neigungswinkel | |
| JP2010529594A (en) | Micromechanical element and method for manufacturing micromechanical element with thin film cap | |
| US9382113B2 (en) | Method for fabricating a self-aligned vertical comb drive structure | |
| JP2005118943A (en) | Method of manufacturing micromachine and micromachine |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |