CN111679792A - Embedded equipment NandFlash I/O data monitoring system and method - Google Patents
Embedded equipment NandFlash I/O data monitoring system and method Download PDFInfo
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- CN111679792A CN111679792A CN202010499774.9A CN202010499774A CN111679792A CN 111679792 A CN111679792 A CN 111679792A CN 202010499774 A CN202010499774 A CN 202010499774A CN 111679792 A CN111679792 A CN 111679792A
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- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0614—Improving the reliability of storage systems
- G06F3/0616—Improving the reliability of storage systems in relation to life time, e.g. increasing Mean Time Between Failures [MTBF]
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- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
- G06F3/0646—Horizontal data movement in storage systems, i.e. moving data in between storage devices or systems
- G06F3/0652—Erasing, e.g. deleting, data cleaning, moving of data to a wastebasket
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- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
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- G06F3/0653—Monitoring storage devices or systems
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- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
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Abstract
The invention discloses a NandFlash I/O data monitoring system for embedded equipment, which comprises the embedded equipment and a PC (personal computer) which are communicated through a serial port, and also comprises a monitoring module implanted into the embedded equipment and an intelligent monitoring system installed in the PC, wherein the intelligent monitoring system comprises an intelligent data analysis module, an interface display module, a test case input module, a timing module and a test report automatic generation module which are connected with the intelligent data analysis module, and the monitoring module and the intelligent data analysis module carry out data interaction. Also discloses a Flash I/O data monitoring method of the embedded device. The invention realizes the monitoring and warning function of the electronic product by monitoring the Flash erasing abnormity, can discover the Flash erasing abnormity of the electronic product caused by product software design, third-party software use and the like in advance, sends out warning, stops the use of related applications and prolongs the service life of the electronic product.
Description
Technical Field
The invention relates to the technical field of NandFlash, in particular to a NandFlash I/O data monitoring system and a NandFlash I/O data monitoring method for an embedded device.
Background
At present, NandFlash is widely applied to electronic products such as mobile phones, set top boxes, televisions, solid state disks and U disks, and is used for storing various parameter data of the electronic products. The main categories of NandFlash include SLC, MLC, TLC, QLC. According to the characteristics of the NandFlash, the NandFlash is continuously erased and written in the using process of a product, and the service life of the NandFlash is expired when the data erasing frequency or the total data amount reaches the limit value specified by a NandFlash chip manufacturer. For data security for the user, the chip vendor does not recommend the user to resume use.
Regarding the calculation of the service life of the NandFlash, other factors also exist, such as more and more complete functions of various embedded devices at present, especially more and more innovative services are carried out by AI intelligent embedded devices, and the products can also run other third-party application processes besides the self-contained process of the system in the actual environment work of the user. If the system software of the embedded device has design defects or the application software of a third party running in the actual environment of a user is not strictly tested, the normal service life of the NandFlash of the embedded device is influenced when the read-write times or the write-write data quantity of the NandFlash of the embedded device is far greater than a normal theoretical value (for example, the actual service life of the embedded device with the normal service life of 5 years is shortened to 1 year). The existing technologies for monitoring NandFlash are numerous, but most of the NandFlash are to manage the bad blocks of NandFlash, detect the service life of the bad blocks and judge whether the NandFlash is qualified or not. The invention achieves the purpose of intercepting the defects of embedded equipment system software and third party application software which influence the normal service life of the NandFlash of the embedded equipment by carrying out data erasing real-time monitoring storage and real-time analysis on the I/O of the NandFlash of the embedded product, and ensures the normal service life of the embedded equipment.
Disclosure of Invention
The invention aims to provide a NandFlash I/O data monitoring system and a NandFlash I/O data monitoring method for an embedded device, which are used for solving the problem that NandFlash erasing abnormity caused by system software or third-party application software cannot be monitored in the prior art.
The invention solves the problems through the following technical scheme:
the NandFlash I/O data monitoring system for the embedded equipment comprises the embedded equipment and a PC (personal computer) which are communicated through a serial port, and further comprises a monitoring module implanted into the embedded equipment and an intelligent monitoring system installed in the PC, wherein the intelligent monitoring system comprises an intelligent data analysis module, an interface display module, a test case input module, a timing module and a test report automatic generation module which are connected with the intelligent data analysis module, and the monitoring module and the intelligent data analysis module perform data interaction.
Simulating a normal use scene of the system, executing the test case input in the test case input module on line or off line by the embedded device to be tested under the condition of obtaining user permission, transmitting monitoring parameters to the intelligent data analysis module by the test case, starting timing by the timing module, implanting the monitoring module of the embedded device to monitor each application process of the device in a set monitoring time period, indirectly knowing the Nandflash I/O erasing and writing data condition and transmitting the Nandflash I/O erasing and writing data to the intelligent data analysis module, evaluating and analyzing the service life of the Nandflash and a product by the intelligent data analysis module, judging whether the system software or the third-party application software of the embedded device has the abnormal erasing and writing Nandflash I/O condition or not, and if so, carrying out interface display early warning and outputting a detailed risk evaluation report by the interface display module; if not, continuing the test until the test is finished, and outputting the test report by the test report automatic generation module.
The intelligent data analysis module comprises a data acquisition and storage module, a data analysis module, a risk evaluation module and a continuous test module, the data analysis module is used for analyzing data of the data acquisition and storage module and outputting an instruction to the continuous test module or the risk evaluation module according to an analysis result, the risk evaluation module is connected with the interface display module, and the continuous test module is connected with the test report automatic generation module. The data acquisition and storage module comprises a data acquisition module, a data preprocessing module and a data storage module which are sequentially connected, wherein the data preprocessing module is used for screening NandFlash I/O (input/output) erasing data so as to perform statistical analysis on the NandFlash I/O erasing data by mainly analyzing certain third-party application processes or system operation processes.
A NandFlash I/O data monitoring method for an embedded device comprises the NandFlash I/O data monitoring system for the embedded device, and the method comprises the following steps:
step S100: before the embedded equipment leaves a factory, presetting Hour _ TotalDatasize and Dailyusetime, wherein the Hour _ TotalDatasize is the erasing and writing data amount of NandFlash per Hour; the Dailyusetime is an average value of the estimated daily use time of the product; s is Hour _ TotalDatasize and Dailyusetime, and S is the total amount of data erasing and writing per day;
step S200: embedding the monitoring module into embedded equipment, installing an intelligent monitoring system on a PC, and establishing communication between the embedded equipment and the PC;
step S300: inputting test case parameters, a designated log file and a test report storage position in a test case input module of the intelligent monitoring system, wherein the test case parameters comprise a NandFlash total capacity R, NandFlash main control calculation particle P/E value PE, monitoring days T, a threshold percentage V and a design service life L, and the L is RxPE/S; the threshold value V is the percentage that the service life L1 of the current state is lower than the design service life L, namely V is (L-L1) ÷ L;
step S400: an intelligent data analysis module of the intelligent monitoring system drives a monitoring module of the embedded equipment, and the monitoring module monitors NandFlash I/O erasing data in real time in the running process of the embedded equipment;
step S500: calculating the service life of the NandFlash according to the daily erasing data quantity collected by the monitoring module, wherein the service life of the NandFlash is L1 ═ R × PE ÷ S1, and L1 is the average daily erasing data quantity of the Dailyusetime working for each day in the monitoring days T; the method for monitoring the erasing data quantity of the NandFlash can be as follows: and creating a NandFlash erasing function in the task monitoring SDK (software toolkit) to obtain the erasing data quantity.
Step S600: if L1 is lower than the threshold value V of the design service life L, the interface display module outputs early warning information, otherwise, after the test is finished, the test report automatic generation module outputs a test report.
And the interface display module displays the early warning information and outputs a risk assessment report, and the output risk assessment report is finally analyzed in research and development or test. After research and development or test evaluation, if the system or the third-party application is confirmed to be abnormal, corresponding processing is carried out in the embedded equipment design stage, and the problem is intercepted in the product research and development or floor test stage so as to ensure the normal service life of the embedded equipment after supply; if the interface display module does not output the early warning information and the output risk report is not abnormal, the test is finished, and an automatic test report is generated.
The invention integrates the monitoring module for monitoring the NandFlash erasing abnormity into the application software or the state monitoring software of the electronic product, and has the following advantages:
A. NandFlash erasure anomaly monitoring function: the data amount S1 of data to be erased and written by NandFlash in Dailyusetime every day is calculated through real-time monitoring, the current service life is calculated according to the formula of L1 ═ R × PE ÷ S1, and if the current service life is less than the designed service life by a certain percentage, the current service life is expressed as L1< L × V, early warning information is sent out;
B. a parameter setting function: the design life L is set according to the trial condition of product test by setting the two parameters of the monitoring days T and the threshold percentage V as values according with the use condition of the product, and the design life L is not allowed to be changed. The monitoring days T and the threshold percentage V can also be set to be default values when the product leaves a factory; if the user inputs the input value, adopting the input value, and if the input value is not the default value, adopting the default value;
C. the application scene is flexible: the two parameters of the number of days T for calculating the average erasing data quantity and the threshold value V are designed to be adjustable so as to adapt to more use scenes.
Compared with the prior art, the invention has the following advantages and beneficial effects:
(1) in the electronic product adopting NandFlash, such as a mobile phone, a set-top box, a television, a solid state disk, a U disk and the like, the invention realizes the erasing abnormity monitoring and alarming function of NandFlash in the electronic product by integrating the software module for monitoring the erasing abnormity of NandFlash in the application software or state monitoring software of the electronic product. The function can discover the condition that NandFlash is abnormally erased and written due to product software design, use of third-party software and the like in the electronic product in advance, send out a warning, and terminate the use of related applications, thereby prolonging the service life of the electronic product.
(2) The method is simple, high in reliability and flexibility, free of increasing hardware cost, and suitable for application and popularization in various electronic products adopting NandFlash.
Drawings
FIG. 1 is a block diagram of the system of the present invention;
FIG. 2 is a functional block diagram of an intelligent data analysis module;
FIG. 3 is a functional block diagram of a data acquisition and storage module;
FIG. 4 is a monitoring flow chart of the present invention.
Detailed Description
The present invention will be described in further detail with reference to examples, but the embodiments of the present invention are not limited thereto.
Example 1:
with reference to fig. 1, 2 and 3, an embedded device NandFlash I/O data monitoring system includes an embedded device and a PC communicating via a serial port, and further includes a monitoring module implanted in the embedded device and an intelligent monitoring system installed in the PC, where the intelligent monitoring system includes an intelligent data analysis module, an interface display module connected to the intelligent data analysis module, a test case input module, a timing module and a test report automatic generation module, and the monitoring module performs data interaction with the intelligent data analysis module. The intelligent data analysis module comprises a data acquisition and storage module, a data analysis module, a risk evaluation module and a continuous test module, the data analysis module is used for analyzing data of the data acquisition and storage module and outputting an instruction to the continuous test module or the risk evaluation module according to an analysis result, the data analysis module can be set to be started for analysis at fixed time or set to be started for analysis automatically after test is completed, the risk evaluation module is connected with the interface display module, and the continuous test module is connected with the test report automatic generation module. The data acquisition and storage module comprises a data acquisition module, a data preprocessing module and a data storage module which are sequentially connected, wherein the data preprocessing module is used for screening NandFlash I/O (input/output) erasing data so as to perform statistical analysis on the NandFlash I/O erasing data by mainly analyzing certain third-party application processes or system operation processes.
Simulating a normal use scene of the system, executing the test case input in the test case input module on line or off line by the embedded device to be tested under the condition of obtaining user permission, transmitting monitoring parameters to the intelligent data analysis module by the test case, starting timing by the timing module, implanting the monitoring module of the embedded device to monitor each application process of the device in a set monitoring time period, indirectly knowing the Nandflash I/O erasing and writing data condition and transmitting the Nandflash I/O erasing and writing data to the intelligent data analysis module, evaluating and analyzing the service life of the Nandflash and a product by the intelligent data analysis module, judging whether the system software or the third-party application software of the embedded device has the abnormal erasing and writing Nandflash I/O condition or not, and if so, carrying out interface display early warning and outputting a detailed risk evaluation report by the interface display module; if not, continuing the test until the test is finished, and outputting the test report by the test report automatic generation module.
Each software (embedded system software and third-party application software) process in the risk assessment report carries out TOP positive sequence sorting information on the actual size of the NandFlash I/O hourly erasing data, so that the outputted risk assessment report can be conveniently researched and developed or tested for final analysis, and abnormal detailed embedded system software or third-party application software can be efficiently found.
Example 2:
a NandFlash I/O data monitoring method for an embedded device comprises the NandFlash I/O data monitoring system for the embedded device, and the method comprises the following steps:
step S100: before the embedded equipment leaves a factory, presetting Hour _ TotalDatasize and Dailyusetime, wherein the Hour _ TotalDatasize is the erasing and writing data amount of NandFlash per Hour; the Dailyusetime is an average value of the estimated daily use time of the product; s is Hour _ TotalDatasize and Dailyusetime, and S is the total amount of data erasing and writing per day;
step S200: embedding the monitoring module into embedded equipment, installing an intelligent monitoring system on a PC, and establishing communication between the embedded equipment and the PC;
step S300: inputting test case parameters, a designated log file and a test report storage position in a test case input module of the intelligent monitoring system, wherein the test case parameters comprise a NandFlash total capacity R, NandFlash main control calculation particle P/E value PE, monitoring days T, a threshold percentage V and a design service life L, and the L is RxPE/S; the threshold value V is the percentage that the service life L1 of the current state is lower than the design service life L, namely V is (L-L1) ÷ L;
step S400: an intelligent data analysis module of the intelligent monitoring system drives a monitoring module of the embedded equipment, and the monitoring module monitors NandFlash I/O erasing data in real time in the running process of the embedded equipment;
step S500: calculating the service life of the NandFlash according to the daily erasing data quantity collected by the monitoring module, wherein the service life of the NandFlash is L1 ═ R × PE ÷ S1, and L1 is the average daily erasing data quantity of the Dailyusetime working for each day in the monitoring days T; the method for monitoring the erasing data quantity of the NandFlash can be as follows: and creating a NandFlash erasing function in the task monitoring SDK (software toolkit) to obtain the erasing data quantity.
Step S600: if L1 is lower than the threshold value V of the design service life L, the interface display module outputs early warning information, otherwise, after the test is finished, the test report automatic generation module outputs a test report.
And the interface display module displays the early warning information and outputs a risk assessment report, and the output risk assessment report is finally analyzed in research and development or test. After research and development or test evaluation, if the system or the third-party application is confirmed to be abnormal, corresponding processing is carried out in the embedded equipment design stage, and the problem is intercepted in the product research and development or floor test stage so as to ensure the normal service life of the embedded equipment after supply; if the interface display module does not output the early warning information and the output risk report is not abnormal, the test is finished, and an automatic test report is generated.
After the embedded device leaves the factory, in the user use stage, the monitoring test flow is as shown in fig. 4:
s2-1: when the embedded device leaves the factory, the manufacturer of the embedded device pre-sets the value of the total data _ total data size (S) of data erasure when the NandFlash works daily for a datausetime hour, such as 5 GB/Day, and the default parameter T, V, L
Judging whether the user selects parameter setting, if so, using the set parameter setting T, V, and using a default value for L;
s2-2: and after the embedded equipment is started at the user side, automatically starting a monitoring module at the background of the embedded equipment, and monitoring and recording the total daily data erasing and writing amount of the NandFlash in a daily unit.
Judging that the time is less than T, and continuing to execute the step S2-2, otherwise, executing the next step;
s2-3: calculating S1 ═ X ÷ T, L1 ═ R × PE ÷ S1;
and judging whether L1< LxV is true or not, if so, prompting an exception, and if not, returning to the step S2-2 to continue execution.
And when T is one month (30), taking 1 test period per month, such as the beginning of the 1 st day of each month to the end of the last 1 st day of each month, monitoring and judging whether the NandFlash daily erasing data quantity meets the design requirement of the embedded equipment. The judging method comprises the following steps: on Day 1 of february, the monitoring module compares the actual Day of the previous month, i.e., S1, with the value of Day _ totalatadasize, i.e., S, prepared in step S2-1, and determines an abnormality if (R × PE ÷ S1) < (R × PE ÷ S × V).
And if the monitoring result of the step S2-3 is not abnormal, directly returning to the step S2-1, and continuously performing monitoring test on the NandFlash erasing data in the current month.
And if the monitoring result in the step S2-3 is abnormal, the embedded device feeds back the abnormal condition to the user or reports the abnormal information to the device manufacturer server in the background of the embedded system, the Day-to-Day data size data of the previous month is stored, and the step S2-4 is entered.
In parallel, the monitoring device synchronously returns to the step S2-1 except the step S2-4, and continues to perform monitoring test on the NandFlash erasing data in the current month.
S2-4: after receiving the feedback abnormal information, the embedded device manufacturer comprehensively judges whether the abnormality belongs to the problem of batch (like receiving a large amount of similar abnormal information at the same time) by combining the conditions reported by other embedded devices of the same type. If the problem is a batch problem, the embedded equipment manufacturer intervenes in analysis and processing, and finally the service life of the product is ensured to meet the design requirement.
Further, the monitoring module stores the daily Day _ TotalDatasize data for up to 2 months, and the daily Day _ TotalDatasize data for more than 2 months will be emptied.
Although the present invention has been described herein with reference to the illustrated embodiments thereof, which are intended to be preferred embodiments of the present invention, it is to be understood that the invention is not limited thereto, and that numerous other modifications and embodiments can be devised by those skilled in the art that will fall within the spirit and scope of the principles of this disclosure.
Claims (4)
1. The NandFlash I/O data monitoring system for the embedded equipment comprises the embedded equipment and a PC (personal computer) which are communicated through a serial port, and is characterized by further comprising a monitoring module implanted into the embedded equipment and an intelligent monitoring system installed in the PC, wherein the intelligent monitoring system comprises an intelligent data analysis module, an interface display module, a test case input module, a timing module and a test report automatic generation module which are connected with the intelligent data analysis module, and the monitoring module and the intelligent data analysis module perform data interaction.
2. The NandFlash I/O data monitoring system for the embedded device according to claim 1, wherein the intelligent data analysis module comprises a data acquisition and storage module, a data analysis module, a risk assessment module and a continuous test module, the data analysis module is used for analyzing data of the data acquisition and storage module and outputting an instruction to the continuous test module or the risk assessment module according to an analysis result, the risk assessment module is connected with the interface display module, and the continuous test module is connected with the test report automatic generation module.
3. The embedded device NandFlash I/O data monitoring system according to claim 2, wherein the data acquisition and storage module comprises a data acquisition module, a data preprocessing module and a data storage module which are connected in sequence, wherein the data preprocessing module is used for screening NandFlash I/O erasing data.
4. A NandFlash I/O data monitoring method for an embedded device, comprising an embedded device NandFlash I/O data monitoring system of any one of claims 1-3, the method comprising:
step S100: before the embedded equipment leaves a factory, presetting Hour _ TotalDatasize and Dailyusetime, wherein the Hour _ TotalDatasize is the erasing and writing data amount of NandFlash per Hour; the Dailyusetime is an average value of the estimated daily use time of the product; s is Hour _ TotalDatasize and Dailyusetime, and S is the total amount of data erasing and writing per day;
step S200: embedding the monitoring module into embedded equipment, installing an intelligent monitoring system on a PC, and establishing communication between the embedded equipment and the PC;
step S300: inputting test case parameters, a designated log file and a test report storage position in a test case input module of the intelligent monitoring system, wherein the test case parameters comprise a NandFlash total capacity R, NandFlash main control calculation particle P/E value PE, monitoring days T, a threshold percentage V and a design service life L, and the L is RxPE/S;
step S400: an intelligent data analysis module of the intelligent monitoring system drives a monitoring module of the embedded equipment, and the monitoring module monitors NandFlash I/O erasing data in real time in the running process of the embedded equipment;
step S500: calculating the service life of the NandFlash according to the daily erasing data quantity collected by the monitoring module, wherein the service life of the NandFlash is L1 ═ R × PE ÷ S1, and L1 is the average daily erasing data quantity of the Dailyusetime working for each day in the monitoring days T;
step S600: if L1 is lower than the threshold value V of the design service life L, the interface display module outputs early warning information, otherwise, after the test is finished, the test report automatic generation module outputs a test report.
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