CN111630775B - Resonance device and resonance device manufacturing method - Google Patents
Resonance device and resonance device manufacturing method Download PDFInfo
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- CN111630775B CN111630775B CN201880087430.8A CN201880087430A CN111630775B CN 111630775 B CN111630775 B CN 111630775B CN 201880087430 A CN201880087430 A CN 201880087430A CN 111630775 B CN111630775 B CN 111630775B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 39
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 72
- 229910052751 metal Inorganic materials 0.000 claims abstract description 66
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- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 claims description 20
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- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
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- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
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- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2468—Tuning fork resonators
- H03H9/2478—Single-Ended Tuning Fork resonators
- H03H9/2489—Single-Ended Tuning Fork resonators with more than two fork tines
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
- B81B7/0038—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00269—Bonding of solid lids or wafers to the substrate
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00285—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
- B81C1/00293—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS maintaining a controlled atmosphere with processes not provided for in B81C1/00285
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/0072—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks of microelectro-mechanical resonators or networks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0595—Holders; Supports the holder support and resonator being formed in one body
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1057—Mounting in enclosures for microelectro-mechanical devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/24—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive
- H03H9/2405—Constructional features of resonators of material which is not piezoelectric, electrostrictive, or magnetostrictive of microelectro-mechanical resonators
- H03H9/2447—Beam resonators
- H03H9/2457—Clamped-free beam resonators
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0271—Resonators; ultrasonic resonators
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0118—Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
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- B81C2203/0172—Seals
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
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- Acoustics & Sound (AREA)
- Computer Hardware Design (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention provides a resonance device capable of maintaining a vibration space of a resonator in a high vacuum, and a method for manufacturing the resonance device. A resonance device (1) is provided with: a MEMS substrate (50) including a resonator; an upper cover (30); and a joint (60) that joins the MEMS substrate (50) and the upper lid (30) so as to seal the vibration space of the resonator (10), wherein the joint comprises a eutectic layer (65) composed of a eutectic alloy of germanium and a metal containing aluminum as a main component, a 1 st titanium layer (63), a 1 st aluminum oxide film (62), and a 1 st conductive layer (61) that are provided continuously from the MEMS substrate (50) side to the upper lid (30) side.
Description
Technical Field
The invention relates to a resonance device and a resonance device manufacturing method.
Background
Resonant devices manufactured using MEMS (Micro Electro Mechanical Systems) technology have been widely used. The resonator device is formed by, for example, bonding an upper substrate to a lower substrate having a resonator.
However, in order to stabilize the resonance characteristics of the resonator, the vibration space in which the resonator vibrates in the resonator device needs to be hermetically sealed and kept in a vacuum state. On the other hand, the exhaust gas generated from the material of the resonator device causes a reduction in the degree of vacuum of the vibration space. In order to prevent the generation of the exhaust gas, a method of performing degassing by a heat treatment at the time of manufacturing the resonance device is used.
However, in a joint portion using eutectic bonding, when heat treatment for degassing is performed at a high temperature, heat diffusion is likely to occur in the joint portion, and this causes, for example, dislocation of the eutectic composition and failure of eutectic reaction during eutectic bonding. Therefore, the heating process for degassing cannot be performed at a high temperature, and the degree of vacuum in the vibration space of the resonator may be reduced by the exhaust gas.
Disclosure of Invention
The present invention has been made in view of such circumstances, and an object thereof is to provide a resonator device and a resonator device manufacturing method capable of maintaining a high vacuum in a vibration space of a resonator.
A resonance device according to an aspect of the present invention includes: a 1 st substrate including a resonator; a 2 nd substrate; and a joint portion for joining the 1 st substrate and the 2 nd substrate to seal a vibration space of the resonator, wherein the joint portion includes a eutectic layer composed of a eutectic alloy of germanium and a metal containing aluminum as a main component, a 1 st titanium layer, a 1 st aluminum oxide film, and a 1 st conductive layer, which are provided in series from the 1 st substrate side to the 2 nd substrate side.
A method for manufacturing a resonance device according to an aspect of the present invention includes: preparing a 1 st substrate and a 2 nd substrate including a resonator; forming a 1 st layer including a metal layer containing aluminum as a main component on the 1 st substrate around the vibrating portion of the resonator; forming a 2 nd layer in which a 1 st conductive layer, a 1 st aluminum oxide film, a 1 st titanium layer and a germanium layer are successively provided in this order from the 2 nd substrate side at a position facing the 1 st layer on the 2 nd substrate when the 1 st substrate and the 2 nd substrate are opposed to each other; and a step of sealing the vibration space of the resonator by eutectic bonding of the metal layer of the 1 st layer and the germanium layer of the 2 nd layer.
According to the present invention, the vibration space of the resonator can be maintained at a high vacuum.
Drawings
Fig. 1 is a perspective view schematically showing an external appearance of a resonance device according to an embodiment of the present invention.
Fig. 2 is an exploded perspective view schematically showing the structure of a resonance device according to an embodiment of the present invention.
Fig. 3 is a plan view schematically showing the structure of a resonator according to an embodiment of the present invention.
Fig. 4 is a sectional view schematically showing the structure of a section taken along line IV-IV of the resonance device shown in fig. 1.
Fig. 5 is an enlarged sectional view of a main portion schematically showing the structure of the joint shown in fig. 4.
Fig. 6A is a schematic diagram illustrating a manufacturing process of a resonance device according to an embodiment.
Fig. 6B is a schematic diagram illustrating a manufacturing process of the resonance device according to the embodiment.
Fig. 6C is a schematic diagram illustrating a manufacturing process of the resonance device according to the embodiment.
Fig. 7 is a main part enlarged sectional view showing a 1 st modification of the joint portion shown in fig. 5.
Fig. 8 is a main portion enlarged sectional view showing a 2 nd modification of the joint portion shown in fig. 5.
Detailed Description
Embodiments of the present invention will be described below. In the description of the drawings below, the same or similar structural elements are denoted by the same or similar reference numerals. The drawings are illustrative, and the size and shape of each part are schematic, and the technical scope of the present invention should not be construed as being limited to the embodiment.
< embodiment >
First, a schematic configuration of a resonance device 1 according to an embodiment of the present invention will be described with reference to fig. 1 and 2. Fig. 1 is a perspective view schematically showing an external appearance of a resonance device 1 according to an embodiment of the present invention. Fig. 2 is an exploded perspective view schematically showing the structure of the resonance device 1 according to the embodiment of the present invention.
The resonator device 1 includes a lower cover 20, a resonator 10 (hereinafter, the lower cover 20 and the resonator 10 are collectively referred to as "MEMS substrate 50"), an upper cover 30, and a joint 60. That is, the resonator device 1 is configured by stacking the MEMS substrate 50, the joint 60, and the upper cover 30 in this order. The MEMS substrate 50 corresponds to an example of the "1 st substrate" of the present invention, and the cap 30 corresponds to an example of the "2 nd substrate" of the present invention.
Hereinafter, each configuration of the resonator device 1 will be described. In the following description, the side of the resonance device 1 on which the upper cover 30 is provided is referred to as the upper side (or the front side), and the side on which the lower cover 20 is provided is referred to as the lower side (or the back side).
The resonator element 10 is a MEMS resonator manufactured using MEMS technology. The resonator 10 and the upper cover 30 are joined together via a joint 60 described later. The resonator 10 and the lower cover 20 are each formed using a silicon (Si) substrate (hereinafter referred to as "Si substrate"), and the Si substrates are bonded to each other. The MEMS substrate 50 (the resonator 10 and the lower cover 20) may be formed using an SOI substrate.
The upper cover 30 is expanded in a flat plate shape along the XY plane, and a flat rectangular parallelepiped concave portion 31, for example, is formed on the back surface thereof. The recess 31 is surrounded by the side wall 33, and forms a part of a vibration space, which is a space in which the resonator 10 vibrates. Further, the air intake layer 34 is formed on the surface of the concave portion 31 of the upper cover 30 on the resonator 10 side. The upper cover 30 may have a flat plate-like structure without the recess 31.
Two terminals T4 are formed on the surface of the upper cover 30. A through electrode V3 filled with a conductive material is formed below each terminal T4. Each terminal T4 is electrically connected to a voltage application unit 141 on the holding unit 140 described later.
The lower cover 20 has: a rectangular flat plate-like bottom plate 22 disposed along the XY plane; and a side wall 23 extending from the peripheral edge portion of the bottom plate 22 in the Z-axis direction, in other words, in the stacking direction of the lower cover 20 and the harmonic oscillator 10. A recess 21 formed by the surface of the bottom plate 22 and the inner surface of the side wall 23 is formed in the lower cover 20 on the surface facing the resonator element 10. The concave portion 21 forms a part of the vibration space of the resonator 10. The lower cover 20 may not have the recess 21 but have a flat plate-like structure. Further, the air intake layer may be formed on the surface of the concave portion 21 of the lower cover 20 on the resonator element 10 side.
Next, a schematic configuration of the resonator 10 according to embodiment 1 of the present invention will be described with reference to fig. 3. The figure is a plan view schematically showing the structure of the resonator 10 according to the embodiment of the present invention.
As shown in fig. 3, the resonator 10 is a MEMS resonator manufactured by MEMS technology, and vibrates out-of-plane in the XY plane in the orthogonal coordinate system of fig. 3. The resonator 10 is not limited to a resonator using an out-of-plane bending vibration mode. For example, the resonator of the resonator device 1 may use an extended vibration mode, a longitudinal thickness vibration mode, a lamb wave vibration mode, an in-plane bending vibration mode, or a surface wave vibration mode. These transducers are applied to, for example, timing devices, RF filters, duplexers, ultrasonic transducers, gyro sensors, acceleration sensors, and the like. In addition, the present invention can be applied to a piezoelectric microscope having an actuator function, a piezoelectric gyroscope, a piezoelectric microphone having a pressure sensor function, an ultrasonic vibration sensor, and the like. The present invention can also be applied to electrostatic MEMS elements, electromagnetic drive MEMS elements, and piezoresistance MEMS elements.
The resonator 10 includes a vibrating portion 120, a holding portion 140, and a holding arm 110.
The vibration part 120 is provided inside the holding part 140, and a space is formed between the vibration part 120 and the holding part 140 at a predetermined interval. In the example shown in fig. 3, vibrating portion 120 includes base portion 130 and 4 vibrating arms 135A to 135D (hereinafter, also collectively referred to as "vibrating arms 135"). The number of the vibrating arms is not limited to 4, and is set to any number of 1 or more, for example. In the present embodiment, each of vibration arms 135A to 135D is formed integrally with base 130.
The base 130 has long sides 131a and 131b in the X-axis direction and short sides 131c and 131d in the Y-axis direction in a plan view. The long side 131A is one side of the front end surface (hereinafter also referred to as "front end 131A") of the base 130, and the long side 131B is one side of the rear end surface (hereinafter also referred to as "rear end 131B") of the base 130. In the base 130, a front end 131A and a rear end 131B are provided to face each other.
In the base 130, the longest distance between the front end 131A and the rear end 131B in the direction from the front end 131A to the rear end 131B, that is, the base length, is about 35 μm. The base width, which is the longest distance between the side ends of the base 130 in the width direction perpendicular to the base length direction, is about 265 μm.
The vibration arms 135 extend in the Y-axis direction and have the same size, respectively. Each of the vibrating arms 135 is provided between the base 130 and the holding portion 140 in parallel to the Y-axis direction, and has one end connected to the tip 131A of the base 130 to be a fixed end and the other end to be an open end. The vibrating arms 135 are arranged at predetermined intervals in the X-axis direction. The width of the vibrating arm 135 in the X-axis direction is about 50 μm, and the length in the Y-axis direction is about 465 μm, for example.
The holding portion 140 is formed in a rectangular frame shape so as to surround the outside of the vibrating portion 120 along the XY plane. For example, the holding portion 140 is formed integrally with the frame body having a prismatic shape. The holding portion 140 may be provided at least partially around the periphery of the vibration portion 120, and is not limited to a frame shape.
In addition, a voltage application portion 141 is formed in each of a region of the holding portion 140 facing the open end of the vibration arm 135 and a region connected to the holding arm. The voltage application unit 141 is electrically connected to the terminal T4 of the upper cover 30, and can apply an alternating electric field to the resonator 10.
The holding arm 110 is provided inside the holding portion 140, and connects the vibrating portion 120 and the holding portion 140.
Next, a laminated structure of the resonance device 1 according to embodiment 1 of the present invention will be described with reference to fig. 4. This figure is a sectional view schematically showing the structure of a section along line IV-IV of the resonance device 1 shown in fig. 1.
As shown in fig. 4, in the resonator device 1, the holding portion 140 of the resonator element 10 is joined to the side wall 23 of the lower cover 20, and the holding portion 140 of the resonator element 10 and the side wall 33 of the upper cover 30 are further joined. Thus, the resonator element 10 is held between the lower cover 20 and the upper cover 30, and a vibration space in which the vibrating arm 135 vibrates is formed by the lower cover 20, the upper cover 30, and the holding portion 140 of the resonator element 10.
The upper lid 30 is formed of a silicon (Si) wafer (hereinafter referred to as "Si wafer") L3 having a predetermined thickness. The upper cover 30 is joined to the holding portion 140 of the resonator element 10 at its peripheral portion (side wall 33) by a joining portion 60 described later. The top cover 30 preferably has a front surface and a back surface facing the resonator 10 and side surfaces of the through-electrode V3 covered with a silicon oxide film L31. The silicon oxide film L31 is formed on the surface of the Si wafer L3 by, for example, oxidation of the surface of the Si wafer L3, chemical Vapor Deposition (CVD).
Further, a getter layer 34 is formed on a surface of the concave portion 31 of the upper cover 30 facing the resonator 10. The air intake layer 34 is formed of, for example, titanium (Ti) or the like, and adsorbs exhaust gas generated in the vibration space. In the upper cover 30 according to the present embodiment, the getter layer 34 is formed on substantially the entire surface of the recess 31 facing the resonator 10, and therefore, a decrease in the degree of vacuum of the vibration space can be suppressed.
The through-electrode V3 of the upper lid 30 is formed by filling a through-hole formed in the upper lid 30 with a metal such as polysilicon (Poly-Si). The through-electrode V3 functions as a wiring for electrically connecting the terminal T4 and the voltage application unit 141. A connection wire W1 is formed between the through electrode V3 and the voltage application unit 141. The connection wiring W1 is formed by eutectic bonding of an aluminum (Al) film and a germanium (Ge) film, for example.
The bottom plate 22 and the side wall 23 of the lower cover 20 are integrally formed by the Si wafer L1. The lower cover 20 is joined to the holding portion 140 of the resonator element 10 via the upper surface of the side wall 23. The thickness of the lower cover 20 defined in the Z-axis direction is, for example, 150 μm, and the depth of the recess 21 is, for example, 50 μm. The Si wafer L1 is made of silicon that is not degraded, and has a resistivity of, for example, 16m Ω · cm or more.
The holding portion 140, the base 130, the resonating arm 135, and the holding arm 110 of the resonator element 10 are integrally formed in the same process. In the resonator 10, a piezoelectric film F3 is formed on an Si substrate F2, which is an example of a substrate, so as to cover the Si substrate F2, and a metal layer E1 is laminated on the piezoelectric film F3. Further, a piezoelectric film F3 is laminated on the metal layer E1 so as to cover the metal layer E1, and a metal layer E2 is laminated on the piezoelectric film F3. A protective film 235 is laminated on the metal layer E2 so as to cover the metal layer E2.
The Si substrate F2 is formed of, for example, a degenerated n-type Si semiconductor having a thickness of about 6 μm, and may include phosphorus (P), arsenic (As), antimony (Sb), and the like As an n-type dopant. The resistance value of the degraded Si used for the Si substrate F2 is, for example, less than 16m Ω · cm, and more preferably 1.2m Ω · cm or less. Silicon oxide (e.g., siO) is formed on the lower surface of the Si substrate F2 2 ) The layer F21 is an example of a temperature characteristic correction layer. This can improve the temperature characteristics. The silicon oxide layer F21 may be formed on the upper surface of the Si substrate F2, or may be formed on both the upper surface and the lower surface of the Si substrate F2.
The metal layers E1 and E2 are formed using, for example, molybdenum (Mo), aluminum (Al), or the like having a thickness of 0.1 μm or more and 0.2 μm or less.
The metal layers E1 and E2 are formed into a desired shape by etching or the like. The metal layer E1 is formed to function as a lower electrode on the vibrating portion 120, for example. The metal layer E1 is formed on the holding arm 110 and the holding portion 140 to function as a wiring for connecting the lower electrode to an ac power supply provided outside the resonator 10.
On the other hand, the metal layer E2 is formed to function as an upper electrode on the vibrating portion 120. The metal layer E2 is formed on the holding arm 110 and the holding portion 140 to function as a wiring for connecting the upper electrode to a circuit provided outside the resonator 10.
The protective film 235 is made of a nitride film such as aluminum nitride (AlN) or silicon nitride (SiN), or tantalum pentoxide (Ta) 2 O 5 ) Silicon dioxide (SiO) 2 ) And the like. The protective film 235 is removed to expose the metal layer E2 on the holding portion 140. The portion where the protective film 235 is removed is filled with a metal such as aluminum (Al) to form the voltage applying portion 141.
The piezoelectric film F3 is a film of a piezoelectric body that converts an applied voltage into vibration, and may be mainly composed of a nitride or an oxide such as aluminum nitride (AlN). Specifically, the piezoelectric film F3 can be formed of scandium aluminum nitride (ScAlN). Aluminum scandium nitride is a substance in which a part of aluminum in aluminum nitride is replaced with scandium. The piezoelectric film F3 has a thickness of, for example, 1 μm, but a thickness of about 0.2 μm to 2 μm can be used.
The piezoelectric film F3 expands and contracts in the Y-axis direction, which is the in-plane direction of the XY plane, in accordance with the electric field applied to the piezoelectric film F3 through the metal layers E1 and E2. By the expansion and contraction of the piezoelectric film F3, the vibrating arm 135 displaces its free end toward the inner surfaces of the lower cover 20 and the upper cover 30, and vibrates in an out-of-plane bending vibration mode.
In the present embodiment, the phase of the electric field applied to outer vibrating arms 135A and 135D and the phase of the electric field applied to inner vibrating arms 135B and 135C are set to be opposite phases to each other. Thereby, outer vibrating arms 135A and 135D and inner vibrating arms 135B and 135C are displaced in opposite directions to each other. For example, when outer vibrating arms 135A and 135D displace the free ends toward the inner surface of upper cover 30, inner vibrating arms 135B and 135C displace the free ends toward the inner surface of lower cover 20.
The joint portion 60 is formed in a rectangular ring shape along the XY plane between the MEMS substrate 50 (the resonator 10 and the lower cover 20) and the upper cover 30 on the periphery of the vibrating portion 120 in the resonator 10, for example, on the holding portion 140. The bonding section 60 seals the vibration space of the resonator 10 and bonds the MEMS substrate 50 and the upper cover 30. Thereby, the vibration space is hermetically sealed, and a vacuum state is maintained.
In the present embodiment, the joint portion 60 includes: the MEMS substrate 50 and the cap 30 are bonded by eutectic bonding of the 1 st layer 70 and the 2 nd layer 80, and the 1 st layer 70 and the 2 nd layer 80 are formed on the MEMS substrate 50 and the cap 30.
Next, a laminated structure of the joint 60 according to embodiment 1 of the present invention will be described with reference to fig. 5. This figure is an enlarged sectional view of a main portion schematically showing the structure of the joint 60 shown in fig. 4.
As shown in fig. 5, the engaging portion 60 includes: a eutectic layer 65, a 1 st titanium (Ti) layer 63, a 1 st aluminum oxide film 62, and a 1 st conductive layer 61, which are provided continuously from the MEMS substrate 50 (resonator 10 and lower cap 20) side to the upper cap 30 side.
The eutectic layer 65 includes a germanium (Ge) layer 65a and a metal layer 65b containing aluminum (Al) as a main component. In the example shown in fig. 5, the germanium (Ge) layer 65a and the metal layer 65b are described as separate layers, but actually, their interfaces are eutectic-bonded. That is, the eutectic layer 65 is composed of a eutectic alloy of germanium (Ge) and a metal containing aluminum (Al) as a main component.
The material of the metal layer 65b is preferably aluminum (Al), an aluminum-copper alloy (AlCu alloy), or an aluminum-silicon-copper alloy (AlSiCu alloy). Since aluminum or an aluminum alloy is a metal that is often used for wiring or the like in a resonator device or the like, for example, aluminum (Al), an aluminum-copper alloy (AlCu alloy), or an aluminum-silicon-copper alloy (AlSiCu alloy) is used for the metal layer 65b, so that the germanium (Ge) layer 65a and the metal layer 65b can be easily eutectic bonded, the manufacturing process can be simplified, and the joint portion 60 that seals the vibration space of the resonator 10 can be easily formed.
The metal layer 65b in the joint 60 is included in the 1 st layer 70. On the other hand, the 1 st conductive layer 61, the 1 st aluminum oxide film 62, the 1 st titanium (Ti) layer 63, and the germanium (Ge) layer 65a are included in the 2 nd layer 80.
The 1 st conductive layer 61 is formed on the surface of the silicon oxide film L31 in the back surface of the upper cap 30. The material of the 1 st conductive layer 61 is preferably aluminum (Al), an aluminum-copper alloy (AlCu alloy), or an aluminum-silicon-copper alloy (AlSiCu alloy). In the case where the 1 st conductive layer 61 is made of an aluminum-copper alloy (AlCu alloy), the weight ratio of copper (Cu) is preferably about 0.5%. Thus, the 1 st conductive layer 61 has conductivity, and the manufacturing process can be simplified, so that the joint portion 60 sealing the vibration space of the resonator 10 can be easily formed.
The 1 st aluminum oxide film 62 is provided on the 1 st conductive layer 61 (under the 1 st conductive layer 61 in fig. 5). The 1 st aluminum oxide film 62 is made of aluminum oxide. The 1 st aluminum oxide film 62 is formed on the 1 st conductive layer 61 by exposing the surface of the 1 st conductive layer 61 to oxygen plasma or the atmosphere. When the surface of the 1 st conductive layer 61 is exposed to the atmosphere, the 1 st aluminum oxide film 62 is formed to a thickness of about 5 nm. The thickness of the 1 st aluminum oxide film 62 is preferably 3nm or more and 10nm or less. This can suppress an increase in on-resistance due to the 1 st aluminum oxide film 62.
A 1 st titanium (Ti) layer 63 is provided on the 1 st aluminum oxide film 62 (under the 1 st aluminum oxide film 62 in fig. 5). The 1 st titanium (Ti) layer 63 is made of titanium (Ti). The 1 st titanium (Ti) layer 63 functions as an adhesion layer for adhering the eutectic layer 65 in contact with the 1 st titanium (Ti) layer 63. Titanium (Ti) has excellent wettability to a eutectic alloy of germanium (Ge) melted by eutectic bonding and a metal containing aluminum (Al) as a main component. Therefore, the junction 60 includes the eutectic layer 65 and the 1 st titanium (Ti) layer 63 which are continuously provided, and thus the eutectic layer 65 wetly expands to the 1 st titanium (Ti) layer 63, and a gap which can be generated between the eutectic layer 65 and the 1 st titanium (Ti) layer 63 can be suppressed. Therefore, the airtightness of the vibration space of the resonator element 10 can be improved.
Titanium (Ti) is characterized by being less expensive in material cost than tantalum (Ta), tantalum nitride (TaN), and the like. Therefore, by including the 1 st titanium (Ti) layer 63 in the joint portion 60, the manufacturing cost of the joint portion 60 can be reduced.
The 1 st aluminum oxide film 62 and the 1 st titanium (Ti) layer 63 function as diffusion prevention layers for preventing thermal diffusion. Here, heat diffusion is less likely to occur between the aluminum oxide film and titanium (Ti) than between aluminum (Al) -titanium (Ti), and the like.
In order to verify the function as a diffusion preventing layer, heat treatment for degassing was performed at 435 ℃. As a result, in the 2 nd layer 80 after the heat treatment, no movement of aluminum or aluminum alloy of the 1 st conductive layer 61 due to thermal diffusion was observed.
On the other hand, for comparison with the 2 nd layer 80 of the present embodiment, a heating process for degassing was performed at 360 ℃ to the upper lid on which the 2 nd layer not including the 1 st aluminum oxide film 62, specifically, a virtual 2 nd layer in which an aluminum (Al) conductive layer, a titanium (Ti) layer, and a germanium (Ge) layer were successively provided in this order. In the virtual layer 2 after the heat treatment, aluminum (Al) of the conductive layer diffuses to the germanium (Ge) layer through the titanium (Ti) layer. This thermal diffusion causes misalignment of the eutectic composition and failure of eutectic reaction during eutectic bonding.
In this way, since the bonding portion 60 includes the 1 st titanium (Ti) layer 63 and the 1 st aluminum oxide film 62 which are continuously provided, thermal diffusion is less likely to occur between the aluminum oxide film and the titanium (Ti), and thus the temperature of the heat treatment for degassing can be increased. Therefore, the gas contained in the resonator device 1 is released (evaporated) by the high-temperature heating treatment to suppress the generation of the exhaust gas, and a high vacuum can be obtained in the vibration space of the resonator 10.
Next, a manufacturing process of the resonator device 1 according to the embodiment will be described with reference to fig. 6A to 6C. Fig. 6A to 6C are schematic diagrams showing a manufacturing process of the resonator device 1 according to the embodiment, and a description will be given of a process when the MEMS substrate 50 and the cap 30 are bonded in a process flow in which the resonator device 1 is removed. Note that, although fig. 6A to 6C illustrate one resonator device 1 among a plurality of resonator devices 1 formed on a wafer for convenience, the resonator device 1 is obtained by forming a plurality of resonator devices 1 on one wafer and dividing the wafer, as in a normal MEMS process.
First, in the step shown in fig. 6A, the MEMS substrate 50 including the resonator 10 and the upper cover 30 are prepared.
Next, in the step shown in fig. 6B, the 1 st layer 70 including the metal layer 65B containing aluminum (Al) as a main component is formed on the MEMS substrate 50 prepared and around the vibrating portion 120 of the resonator 10.
Specifically, for example, aluminum (Al) is laminated on the piezoelectric film F3 of the resonator 10. Next, the stacked aluminum (Al) is formed into a desired shape by etching or the like, whereby the metal layer 65b is formed on the MEMS substrate 50 and outside the vibrating portion 120. The metal layer 65b is formed around the resonance space of the resonator 10 when the MEMS substrate 50 is viewed in plan.
After the 1 st layer 70 is formed, the MEMS substrate 50 is subjected to a heat treatment for degassing at a high temperature, for example, about 435 ℃. The 1 st layer 70 includes only the metal layer 65b, and therefore, even if the heat treatment is performed at a high temperature, the influence by the thermal diffusion is reduced.
On the other hand, in the prepared upper cap 30, the 2 nd layer 80 in which the 1 st conductive layer 61, the 1 st aluminum oxide film 62, the 1 st titanium (Ti) layer 63, and the germanium (Ge) layer 65a are successively provided in this order from the upper cap 30 side is formed.
Specifically, for example, aluminum (Al) is laminated on the surface of the silicon oxide film L31 on the back surface of the upper lid 30. Next, the laminated aluminum (Al) is formed into a desired shape by etching or the like, thereby forming the 1 st conductive layer 61 at a predetermined position in the upper lid 30. The predetermined position where the 1 st conductive layer 61 is formed is, for example, a position facing or substantially facing the 1 st layer 70 formed on the MEMS substrate 50 on the back surface of the upper cover 30 when the front surface of the MEMS substrate 50 and the back surface of the upper cover 30 are made to face each other. Then, a 1 st aluminum oxide film 62 is formed on the 1 st conductive layer 61 (under the 1 st conductive layer 61 in fig. 6B), and titanium (Ti) is laminated on the 1 st aluminum oxide film 62 (under the 1 st aluminum oxide film 62 in fig. 6B) to provide a 1 st titanium (Ti) layer 63. Further, germanium (Ge) is stacked on the 1 st titanium (Ti) layer 63 (below the 1 st titanium (Ti) layer 63 in fig. 6B) to provide a germanium (Ge) layer 65a.
After the 2 nd layer 80 is formed, the upper cover 30 is subjected to a heating treatment for degassing at a high temperature, for example, about 435 ℃. This enables the gas contained in the upper lid 30 and the 2 nd layer 80 to be sufficiently released (evaporated), and the generation of exhaust gas can be reduced.
Next, in the step shown in fig. 6C, the metal layer 65b of the 1 st layer 70 and the germanium (Ge) layer 65a of the 2 nd layer 80 are eutectic bonded.
Specifically, aligning the 1 st layer 70 with the 2 nd layer 80 matches the position of the MEMS substrate 50 and the cap up 30. After the alignment, a heating process for eutectic bonding is performed by sandwiching the MEMS substrate 50 and the cap 30 with a heater or the like. At this time, the upper cover 30 is moved toward the MEMS substrate 50. As a result, as shown in fig. 6C, the germanium (Ge) layer 65a of the 2 nd layer 80 is in contact with the metal layer 65b of the 1 st layer 70.
The temperature in the heating treatment for eutectic bonding is preferably higher than the eutectic temperature and lower than the melting point of aluminum (Al) alone, i.e., 424 ℃ or higher and lower than 620 ℃. The heating time is preferably 10 minutes to 20 minutes. In the present embodiment, the heat treatment is performed at a temperature of 430 ℃ to 500 ℃ inclusive for about 15 minutes.
During heating, the resonator device 1 is pressed against the MEMS substrate 50 from the upper cover 30 with a pressure of, for example, about 15 MPa. The pressing pressure is preferably about 5MPa to 25 MPa.
After the heating process for eutectic bonding, for example, a cooling process is performed by natural cooling. The cooling process is not limited to natural cooling, and the eutectic layer 65 may be formed in the bonding portion 60, and various cooling temperatures and cooling rates can be selected.
As a result of the step shown in fig. 6C, as shown in fig. 5, a bonding portion 60 including a eutectic layer 65 in which a germanium (Ge) layer 65a and a metal layer 65b containing aluminum (Al) as a main component are eutectic-bonded is formed.
In addition, in the formation of the 1 st layer 70 and the 2 nd layer 80, an aluminum (Al) film and a germanium (Ge) film may be formed and eutectic-bonded to provide the connection wiring W1 shown in fig. 4 for connecting the through electrode V3 and the voltage application portion 141.
In this embodiment, fig. 5 to 6C show an example of the joint portion 60 including the eutectic layer 65, the 1 st titanium (Ti) layer 63, the 1 st aluminum oxide film 62, and the 1 st conductive layer 61, but the present invention is not limited thereto.
(modification 1)
Fig. 7 is an enlarged view of a main portion showing a 1 st modification of the joint portion 60 shown in fig. 5. In modification 2, the same components as those of the joint 60 shown in fig. 5 are denoted by the same reference numerals, and the description thereof is omitted as appropriate. In addition, the same operational effects based on the same structure are not mentioned in order.
As shown in fig. 7, the joint 60 further includes: a 2 nd conductive layer 66 and a 2 nd titanium (Ti) layer 67 provided continuously from the MEMS substrate 50 side to the eutectic layer 65. A 2 nd conductive layer 66 and a 2 nd titanium (Ti) layer 67 are included in the 1 st layer 70.
The 2 nd conductive layer 66 is formed on the piezoelectric film F3 of the resonator 10. The material of the 2 nd conductive layer 66 is preferably aluminum (Al), an aluminum-copper alloy (AlCu alloy), or an aluminum-silicon-copper alloy (AlSiCu alloy). In the case where the 2 nd conductive layer 66 is made of an aluminum-copper alloy (AlCu alloy), the weight ratio of copper (Cu) is preferably about 0.5%. Thus, the 2 nd conductive layer 66 has conductivity, the manufacturing process can be simplified, and the joint portion 60 sealing the vibration space of the resonator 10 can be easily formed.
A 2 nd titanium (Ti) layer 67 is disposed on the 2 nd conductive layer 66. The 2 nd titanium (Ti) layer 67 is made of titanium (Ti). The 2 nd titanium (Ti) layer 67 functions as an adhesion layer for adhering the eutectic layer 65 in contact with the 2 nd titanium (Ti) layer 67. The joint 60 includes the 2 nd titanium (Ti) layer 67 and the eutectic layer 65 which are continuously provided, and thus the eutectic layer 65 wetly expands to the 2 nd titanium (Ti) layer 67, and a gap which can be generated between the eutectic layer 65 and the 2 nd titanium (Ti) layer 67 can be suppressed. Therefore, the joint 60 can further improve the airtightness of the vibration space of the resonator 10.
In this way, the joint 60 includes the 2 nd conductive layer 66 and the 2 nd titanium (Ti) layer 67 which are continuously provided from the MEMS substrate 50 side to the eutectic layer 65, whereby wiring can be routed from the 2 nd conductive layer 66 in the MEMS substrate 50.
In the process flow of modification 1, in the step of forming layer 1 70 shown in fig. 6B, conductive layer 2 66 and titanium (Ti) 2 layer 67 are continuously provided from the MEMS substrate 50 side to the metal layer 65B.
Specifically, for example, aluminum (Al) is laminated on the piezoelectric film F3 of the resonator 10. Next, the 2 nd conductive layer 66 is formed by forming the stacked aluminum (Al) into a desired shape by etching or the like. The 2 nd conductive layer 66 is formed around the resonance space of the resonator 10 in a plan view of the MEMS substrate 50. Titanium (Ti) is laminated on the 2 nd conductive layer 66 to provide a 2 nd titanium (Ti) layer 67. Further, a metal layer 65b is provided by laminating, for example, aluminum (Al) on the 2 nd titanium (Ti) layer 67. Thus, in the step shown in fig. 6C, the metal layer 65b and the germanium (Ge) layer 65a are eutectic-bonded, thereby including the 2 nd conductive layer 66, the 2 nd titanium (Ti) layer 67, and the eutectic layer 65, which are provided continuously at the bonding portion 60.
(modification 2)
Fig. 8 is an enlarged view of a main portion showing a 2 nd modification of the joint portion 60 shown in fig. 5. In modification 2, the same components as those of the joint 60 shown in fig. 5 are denoted by the same reference numerals, and the description thereof is omitted as appropriate. In addition, the same operational effects based on the same structure are not mentioned in order.
As shown in fig. 8, the joint 60 further includes: a 2 nd conductive layer 66, a 2 nd aluminum oxide film 68, and a 2 nd titanium (Ti) layer 67, which are continuously provided from the MEMS substrate 50 side to the eutectic layer 65. The 2 nd conductive layer 66, the 2 nd aluminum oxide film 68, and the 2 nd titanium (Ti) layer 67 are included in the 1 st layer 70.
The 2 nd conductive layer 66 is formed on the piezoelectric film F3 of the resonator 10. As in modification 1, the material of the 2 nd conductive layer 66 is preferably aluminum (Al), an aluminum-copper alloy (AlCu alloy), or an aluminum-silicon-copper alloy (AlSiCu alloy).
A 2 nd aluminum oxide film 68 is disposed on the 2 nd conductive layer 66. The 2 nd aluminum oxide film 68 is made of aluminum oxide. The 2 nd aluminum oxide film 68 is formed on the 2 nd conductive layer 66 by exposing the surface of the 2 nd conductive layer 66 to oxygen plasma or the atmosphere. When the surface of the 2 nd conductive layer 66 is exposed to the atmosphere, the 2 nd aluminum oxide film 68 has a thickness of about 5 nm. The thickness of the 2 nd aluminum oxide film 68 is preferably 3nm or more and 10nm or less. This can suppress an increase in on-resistance due to the 2 nd aluminum oxide film 68.
A 2 nd titanium (Ti) layer 67 is disposed on the 2 nd aluminum oxide film 68. The 2 nd titanium (Ti) layer 67 is made of titanium (Ti). In addition, the 2 nd titanium (Ti) layer 67 functions as an adhesion layer for adhering the eutectic layer 65 in contact with the 2 nd titanium (Ti) layer 67, as in the case of the 1 st modification.
The 2 nd aluminum oxide film 68 and the 2 nd titanium (Ti) layer 67 function as diffusion prevention layers for preventing thermal diffusion.
In order to verify the function as a diffusion preventing layer, the MEMS substrate 50 on which the 1 st layer 70 including the 2 nd conductive layer 66, the 2 nd aluminum oxide film 68, the 2 nd titanium (Ti) layer 67, and the metal layer 65b is formed is subjected to a heating process for degassing at 435 ℃. As a result, in the 1 st layer 70 after the heat treatment, no movement of aluminum or aluminum alloy of the 2 nd conductive layer 66 due to thermal diffusion was observed.
On the other hand, for comparison with the 1 st layer 70 of the 2 nd modification, the MEMS substrate on which the 1 st layer not including the 2 nd aluminum oxide film 68, specifically, a virtual 1 st layer in which a conductive layer of aluminum (Al), a titanium (Ti) layer, and a metal layer of aluminum (Al) are successively provided in this order, is subjected to a heat treatment for deaeration at 360 ℃. In the virtual layer 1 after the heat treatment, aluminum (Al) of the conductive layer diffuses to the metal layer through the titanium (Ti) layer. This thermal diffusion causes misalignment of the eutectic composition and failure of eutectic reaction during eutectic bonding.
In this way, since the bonding portion 60 includes the 2 nd conductive layer 66, the 2 nd aluminum oxide film 68, and the 2 nd titanium (Ti) layer 67 which are provided continuously from the MEMS substrate 50 side to the eutectic layer 65, wiring can be routed from the 2 nd conductive layer 66 in the MEMS substrate 50, and thermal diffusion is less likely to occur between the aluminum oxide film and the titanium (Ti), so that heat treatment for degassing can be performed at a high temperature with respect to the MEMS substrate 50.
In the process flow of modification 2, in the step of forming the 1 st layer 70 shown in fig. 6B, the 2 nd conductive layer 66, the 2 nd aluminum oxide film 68, and the 2 nd titanium (Ti) layer 67 are continuously provided from the MEMS substrate 50 side to the metal layer 65B.
Specifically, for example, aluminum (Al) is laminated on the piezoelectric film F3 of the resonator 10. Next, the 2 nd conductive layer 66 is formed by forming the stacked aluminum (Al) into a desired shape by etching or the like. The 2 nd conductive layer 66 is formed around the resonance space of the resonator 10 in a plan view of the MEMS substrate 50. Further, a 2 nd aluminum oxide film 68 is formed on the 2 nd conductive layer 66, and titanium (Ti) is laminated on the 2 nd aluminum oxide film 68 to provide a 2 nd titanium (Ti) layer 67. Further, a metal layer 65b is provided by laminating, for example, aluminum (Al) on the 2 nd titanium (Ti) layer 67. Thus, in the step shown in fig. 6C, the metal layer 65b and the germanium (Ge) layer 65a are eutectic-bonded, thereby including the 2 nd conductive layer 66, the 2 nd aluminum oxide film 68, the 2 nd titanium (Ti) layer 67, and the eutectic layer 65, which are provided continuously at the bonding portion 60.
The above description has been made of exemplary embodiments of the present invention. A resonance device 1 according to an embodiment of the present invention includes: a MEMS substrate 50 including a resonator 10; an upper cover 30; and a bonding portion 60 that bonds the MEMS substrate 50 and the upper cover 30 so as to seal the vibration space of the resonator 10, wherein the bonding portion 60 includes a eutectic layer 65 made of a eutectic alloy of germanium (Ge) and a metal containing aluminum (Al) as a main component, a 1 st titanium (Ti) layer 63, a 1 st aluminum oxide film 62, and a 1 st conductive layer 61, which are provided continuously from the MEMS substrate 50 side to the upper cover 30 side. Titanium (Ti) wettability is excellent with respect to a eutectic alloy of germanium (Ge) and a metal containing aluminum (Al) as a main component, which are melted by eutectic bonding. Therefore, the junction 60 includes the eutectic layer 65 and the 1 st titanium (Ti) layer 63 which are continuously provided, and thus the eutectic layer 65 wetly expands to the 1 st titanium (Ti) layer 63, and a gap which can be generated between the eutectic layer 65 and the 1 st titanium (Ti) layer 63 can be suppressed. Therefore, the airtightness of the vibration space of the resonator 10 can be improved. In addition, titanium (Ti) is characterized by low material cost compared to tantalum (Ta), tantalum nitride (TaN), and the like. Therefore, by including the 1 st titanium (Ti) layer 63 in the joint portion 60, the manufacturing cost of the joint portion 60 can be reduced. Further, since the bonding portion 60 includes the 1 st titanium (Ti) layer 63 and the 1 st aluminum oxide film 62 which are continuously provided, thermal diffusion is less likely to occur between the aluminum oxide film and the titanium (Ti), and thus the temperature of the heat treatment for degassing can be increased. Therefore, the gas contained in the resonator device 1 is released (evaporated) by the high-temperature heating treatment to suppress the generation of the exhaust gas, and a high vacuum can be obtained in the vibration space of the resonator 10.
In the resonator device 1, the 1 st aluminum oxide film 62 may have a thickness of 3nm to 10 nm. This can suppress an increase in on-resistance due to the 1 st aluminum oxide film 62.
In the above-described resonance device 1, the material of the 1 st conductive layer 61 may be aluminum (Al), an aluminum-copper alloy (AlCu alloy), or an aluminum-silicon-copper alloy (AlSiCu alloy). Since aluminum or an aluminum alloy is a metal that is often used for wiring in a resonator device or the like, for example, the 1 st conductive layer 61 is made of aluminum (Al), an aluminum-copper alloy (AlCu alloy), or an aluminum-silicon-copper alloy (AlSiCu alloy), whereby the 1 st conductive layer 61 has conductivity, the manufacturing process can be simplified, and the joint 60 that seals the vibration space of the resonator 10 can be easily formed.
In the above-described resonance device 1, the metal containing aluminum as a main component may be aluminum (Al), an aluminum-copper alloy (AlCu alloy), or an aluminum-silicon-copper alloy (AlSiCu alloy). This makes it possible to facilitate eutectic bonding of the germanium (Ge) layer 65a and the metal layer 65b, simplify the manufacturing process, and easily form the bonding portion 60 that seals the vibration space of the resonator 10.
In addition, in the resonator device 1 described above, the joint 60 may further include the 2 nd conductive layer 66 and the 2 nd titanium (Ti) layer 67 which are continuously provided from the MEMS substrate 50 side to the eutectic layer 65. Since the junction 60 includes the 2 nd titanium (Ti) layer 67 and the eutectic layer 65 provided in series, the eutectic layer 65 wetly spreads to the 2 nd titanium (Ti) layer 67, and a gap that can be generated between the eutectic layer 65 and the 2 nd titanium (Ti) layer 67 can be suppressed. Therefore, the joint 60 can further improve the airtightness of the vibration space of the resonator 10. In addition, since the bonding portion 60 includes the 2 nd conductive layer 66 and the 2 nd titanium (Ti) layer 67 which are continuously provided from the MEMS substrate 50 side to the eutectic layer 65, wiring can be routed from the 2 nd conductive layer 66 in the upper cap 30.
In addition, in the resonator device 1 described above, the joint 60 may further include a 2 nd conductive layer 66, a 2 nd aluminum oxide film 68, and a 2 nd titanium (Ti) layer 67 that are provided continuously from the MEMS substrate 50 side to the eutectic layer 65. Since the bonding portion 60 includes the 2 nd conductive layer 66, the 2 nd aluminum oxide film 68, and the 2 nd titanium (Ti) layer 67 which are continuously provided from the MEMS substrate 50 side to the eutectic layer 65, wiring can be routed from the 2 nd conductive layer 66 in the MEMS substrate 50, and thermal diffusion is less likely to occur between the aluminum oxide film and the titanium (Ti), so that heat treatment for degassing can be performed at a high temperature with respect to the MEMS substrate 50.
In the resonator device 1, the 2 nd aluminum oxide film 68 may have a thickness of 3nm to 10 nm. This can suppress an increase in on-resistance due to the 2 nd aluminum oxide film 68.
In the resonator device 1, the material of the 2 nd conductive layer 66 may be aluminum (Al), an aluminum-copper alloy (AlCu alloy), or an aluminum-silicon-copper alloy (AlSiCu alloy). Thus, the 2 nd conductive layer 66 has conductivity, and the joint portion 60 sealing the vibration space of the resonator 10 can be easily formed.
A method for manufacturing a resonance device according to an embodiment of the present invention includes: preparing an MEMS substrate 50 including the resonator 10 and an upper cover 30; a step of forming a 1 st layer 70 including a metal layer 65b containing aluminum (Al) as a main component on the periphery of the vibrating portion 120 of the resonator 10 of the MEMS substrate 50; forming a 2 nd layer 80 in which a 1 st conductive layer 61, a 1 st aluminum oxide film 62, a 1 st titanium (Ti) layer 63, and a germanium (Ge) layer 65a are successively provided in this order from the upper cap 30 side, at a position of the upper cap 30 facing the 1 st layer 70 when the MEMS substrate 50 and the upper cap 30 are opposed; and eutectic bonding the metal layer 65b of the 1 st layer 70 and the germanium (Ge) layer 65a of the 2 nd layer 80 while sealing the vibration space of the resonator 10. Thereby, the joint portion 60 including the eutectic layer 65 eutectic-bonded between the metal layer 65b containing aluminum (Al) as a main component and the germanium (Ge) layer 65a is formed. The joint 60 includes the 1 st titanium (Ti) layer 63 and the eutectic layer 65 which are continuously provided, and thus the eutectic layer 65 wetly spreads to the 1 st titanium (Ti) layer 63, and a gap which can be generated between the eutectic layer 65 and the 1 st titanium (Ti) layer 63 can be suppressed. Therefore, the airtightness of the vibration space of the resonator 10 can be improved. In addition, since the joint portion 60 includes the 1 st titanium (Ti) layer 63, the manufacturing cost of the joint portion 60 can be reduced. Further, since the bonding portion 60 includes the 1 st aluminum oxide film 62 and the 1 st titanium (Ti) layer 63 which are continuously provided, thermal diffusion is less likely to occur between the aluminum oxide film and the titanium (Ti), and thus the temperature of the heat treatment for degassing can be increased. Therefore, the gas contained in the resonator device 1 is released (evaporated) by the high-temperature heating treatment to suppress the generation of the exhaust gas, and a high vacuum can be obtained in the vibration space of the resonator 10.
In the above-described method for manufacturing a resonator device, the 1 st aluminum oxide film 62 may have a thickness of 3nm or more and 10nm or less. This can suppress an increase in on-resistance due to the 1 st aluminum oxide film 62.
In the method for manufacturing a resonant device, the material of the 1 st conductive layer 61 may be aluminum (Al), an aluminum-copper alloy (AlCu alloy), or an aluminum-silicon-copper alloy (AlSiCu alloy). Thus, the 1 st conductive layer 61 has conductivity, the manufacturing process can be simplified, and the joint portion 60 sealing the vibration space of the resonator 10 can be easily formed.
In the above-described method for manufacturing a resonator device, the material of the metal layer 65b may be aluminum (Al), an aluminum-copper alloy (AlCu alloy), or an aluminum-silicon-copper alloy (AlSiCu alloy). This makes it possible to easily eutectic-bond the germanium (Ge) layer 65a and the metal layer 65b, simplify the manufacturing process, and easily form the bonding portion 60 that seals the vibration space of the resonator 10.
In the method for manufacturing a resonator device, the step of forming the 1 st layer 70 may include: a 2 nd conductive layer 66 and a 2 nd titanium (Ti) layer 67 are continuously provided from the MEMS substrate 50 side to the metal layer 65b. The joint 60 includes the 2 nd titanium (Ti) layer 67 and the eutectic layer 65 which are continuously provided, and thus the eutectic layer 65 wetly expands to the 2 nd titanium (Ti) layer 67, and a gap which can be generated between the eutectic layer 65 and the 2 nd titanium (Ti) layer 67 can be suppressed. Therefore, the joint 60 can further improve the airtightness of the vibration space of the resonator element 10. In addition, the joint 60 includes the 2 nd conductive layer 66 and the 2 nd titanium (Ti) layer 67 which are continuously provided from the MEMS substrate 50 side to the eutectic layer 65, whereby wiring can be routed from the 2 nd conductive layer 66 in the MEMS substrate 50.
In the method for manufacturing a resonator device, the step of forming the 1 st layer 70 includes: a 2 nd conductive layer 66, a 2 nd aluminum oxide film 68, and a 2 nd titanium (Ti) layer 67 are continuously provided from the MEMS substrate 50 side to the metal layer 65b. The joint 60 includes the 2 nd conductive layer 66, the 2 nd aluminum oxide film 68, and the 2 nd titanium (Ti) layer 67, which are continuously provided from the MEMS substrate 50 side to the eutectic layer 65, whereby wiring can be routed from the 2 nd conductive layer 66 in the MEMS substrate 50, and thermal diffusion is less likely to occur between the aluminum oxide film and the titanium (Ti), so that heat treatment for deaeration can be performed at a high temperature with respect to the MEMS substrate 50.
In the above-described method for manufacturing a resonator device, the 2 nd aluminum oxide film 68 may have a thickness of 3nm to 10 nm. This can suppress an increase in on-resistance due to the 2 nd aluminum oxide film 68.
In the method for manufacturing a resonator device, the material of the 2 nd conductive layer 66 may be aluminum (Al), an aluminum-copper alloy (AlCu alloy), or an aluminum-silicon-copper alloy (AlSiCu alloy). Thus, the 2 nd conductive layer 66 has conductivity, the manufacturing process can be simplified, and the joint portion 60 sealing the vibration space of the resonator 10 can be easily formed.
The embodiments described above are for the purpose of facilitating understanding of the present invention, and are not to be construed as limiting the present invention. The present invention may be modified/improved without departing from the gist thereof, and the present invention also includes equivalents thereof. That is, the embodiment of the present invention includes the features of the present invention, and the embodiments appropriately modified by those skilled in the art are also included in the scope of the present invention. For example, the elements provided in the embodiments, and the arrangement, materials, conditions, shapes, sizes, and the like thereof are not limited to those exemplified and can be appropriately changed. It is to be understood that the embodiments are illustrative and that partial substitutions or combinations of the configurations shown in the different embodiments can be made, and that these are included in the scope of the present invention as long as the features of the present invention are included.
Description of the reference numerals
1 \ 8230and a resonance device; 10\8230aharmonic oscillator; 20 \ 8230and a lower cover; 21 \ 8230and concave part; 22 \ 8230and a bottom plate; 23 \ 8230and side wall; 30 \ 8230and an upper cover; 31 \ 8230and a concave part; 33 \ 8230and side wall; 34 \ 8230a getter layer; 50 \ 8230and MEMS substrate; 60 \ 8230and a joint part; 61 \ 8230a 1 st conductive layer; 62 \ 8230and 1 st alumina oxide film; 63 \ 8230a 1 st titanium (Ti) layer; 65 \ 8230and eutectic layer; 65 a\8230agermanium (Ge) layer; 65b 8230and a metal layer; 66' \ 8230a 2 nd conductive layer; 67, 8230a 2 nd titanium (Ti) layer; 68, 8230a 2 nd aluminum oxide film; 70, 8230and layer 1; 80, 8230and layer 2; 110, 8230and a holding arm; 120, 8230and a vibrating part; 130, 8230a basal part; 135. 135A, 135B, 135C, 135D 8230and a vibrating arm; 140, 8230and a holding part; 141 8230a voltage applying part; 235 \ 8230and a protective film; e1, E2 \8230anda metal layer; f2 \ 8230and Si substrate; f3 \8230andpiezoelectric film; f21 \ 8230and a silicon oxide layer; l1 \ 8230and Si wafer; l3 \ 8230and Si wafer; l31 \ 8230and silicon oxide film; t4 \ 8230and terminal; v3 \ 8230and a through electrode; w1 (8230), and connecting wiring.
Claims (16)
1. A resonance device is characterized by comprising:
a 1 st substrate including a resonator;
a 2 nd substrate;
a bonding portion for bonding the 1 st substrate and the 2 nd substrate while sealing a vibration space of the resonator,
the junction includes a eutectic layer composed of a eutectic alloy of germanium and a metal containing aluminum as a main component, a 1 st titanium layer, a 1 st aluminum oxide film, and a 1 st conductive layer, which are provided continuously from the 1 st substrate side to the 2 nd substrate side.
2. The resonating device of claim 1,
the 1 st aluminum oxide film has a thickness of 3nm or more and 10nm or less.
3. Resonating device according to claim 1 or 2,
the material of the 1 st conducting layer is aluminum, aluminum-copper alloy or aluminum-silicon-copper alloy.
4. The resonance device according to any one of claims 1 to 3,
the metal having aluminum as a main component is aluminum, an aluminum-copper alloy, or an aluminum-silicon-copper alloy.
5. The resonance apparatus according to any one of claims 1 to 4,
the joint further includes: a 2 nd conductive layer and a 2 nd titanium layer provided continuously from the 1 st substrate side to the eutectic layer.
6. The resonance apparatus according to any one of claims 1 to 4,
the joint further includes: a 2 nd conductive layer, a 2 nd aluminum oxide film and a 2 nd titanium layer successively provided from the 1 st substrate side to the eutectic layer.
7. The resonating device of claim 6,
the 2 nd aluminum oxide film has a thickness of 3nm or more and 10nm or less.
8. The resonance apparatus according to any one of claims 5 to 7,
the material of the 2 nd conducting layer is aluminum, aluminum-copper alloy or aluminum-silicon-copper alloy.
9. A method of manufacturing a resonator device, comprising:
preparing a 1 st substrate and a 2 nd substrate including a resonator;
forming a 1 st layer including a metal layer containing aluminum as a main component on the periphery of the vibrating portion of the resonator of the 1 st substrate;
forming a 2 nd layer in which a 1 st conductive layer, a 1 st aluminum oxide film, a 1 st titanium layer, and a germanium layer are successively provided in this order from the 2 nd substrate side at a position of the 2 nd substrate facing the 1 st layer when the 1 st substrate and the 2 nd substrate are opposed to each other; and
and eutectic bonding the metal layer of the 1 st layer and the germanium layer of the 2 nd layer while sealing the vibration space of the resonator.
10. The resonance device manufacturing method according to claim 9,
the 1 st aluminum oxide film has a thickness of 3nm or more and 10nm or less.
11. The resonance device manufacturing method according to claim 9 or 10,
the material of the 1 st conducting layer is aluminum, aluminum-copper alloy or aluminum-silicon-copper alloy.
12. The resonance device manufacturing method according to any one of claims 9 to 11,
the metal layer is made of aluminum, aluminum-copper alloy or aluminum-silicon-copper alloy.
13. The resonance device manufacturing method according to any one of claims 9 to 12,
the step of forming the 1 st layer includes: a2 nd conductive layer and a 2 nd titanium layer are continuously provided from the 1 st substrate side to the metal layer.
14. The resonance device manufacturing method according to any one of claims 9 to 12,
the step of forming the 1 st layer includes: a2 nd conductive layer, a 2 nd aluminum oxide film and a 2 nd titanium layer are continuously provided from the 1 st substrate side to the metal layer.
15. The resonance device manufacturing method according to claim 14,
the 2 nd aluminum oxide film has a thickness of 3nm or more and 10nm or less.
16. The resonance device manufacturing method according to any one of claims 13 to 15,
the material of the 2 nd conducting layer is aluminum, aluminum-copper alloy or aluminum-silicon-copper alloy.
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