CN111562688B

CN111562688B - Method of manufacturing semiconductor device, and semiconductor integrated circuit

Info

Publication number: CN111562688B
Application number: CN202010440453.1A
Authority: CN
Inventors: 朱继光; 胡志朋
Original assignee: United Microelectronics Center Co Ltd
Current assignee: United Microelectronics Center Co Ltd
Priority date: 2020-05-22
Filing date: 2020-05-22
Publication date: 2023-01-06
Anticipated expiration: 2040-05-22
Also published as: CN111562688A

Abstract

A method of manufacturing a semiconductor device, a semiconductor device and a semiconductor integrated circuit are disclosed. The method comprises the following steps: providing a semiconductor-on-insulator substrate, wherein the semiconductor-on-insulator substrate comprises a first substrate, a first insulating layer on the first substrate and a semiconductor layer on the first insulating layer; patterning the semiconductor layer to form a grating coupler and a body of the active device; forming at least one functional layer on the semiconductor layer on the side facing away from the first insulating layer; bonding the at least one functional layer to the carrier substrate on a side of the at least one functional layer facing away from the semiconductor layer; completely removing the first substrate; forming a plurality of through holes extending from a surface of the first insulating layer facing away from the semiconductor layer into the at least one functional layer; and forming a metal wiring layer on one side of the first insulating layer, which is far away from the semiconductor layer. The metal wiring layer and the plurality of vias partially surround the active device.

Description

Method of manufacturing semiconductor device, and semiconductor integrated circuit

Technical Field

The present disclosure relates to the field of semiconductor technology, and more particularly, to a method for fabricating a semiconductor device, and a semiconductor integrated circuit.

Background

Silicon photonics technology uses optical signals instead of electrical signals to transmit data. It provides advantages of high integration, high transmission rate, low power consumption, etc., and is thus considered as a promising technology. The development of silicon-on-chip processes based on complementary metal-oxide-semiconductor (CMOS) processes is the mainstream direction of research in the industry.

However, CMOS process compatible silicon photonics are facing several challenges. For example, to provide an optical transmission channel to a photonic device, a windowing process is required to etch through multiple layers of dielectric material in a silicon photonics chip, making large-scale application of silicon photonics processes difficult. In addition, other aspects of the performance (e.g., structural stability) of the silicon photonics chip may need to be sacrificed in order to achieve an improvement in electrical performance (e.g., microwave loss). In silicon photonics integration technology, there is also a need for special designs for active devices.

Disclosure of Invention

It would be advantageous to provide a mechanism that alleviates, mitigates or even eliminates one or more of the above-mentioned problems.

According to some embodiments of the present disclosure, a method of fabricating a semiconductor device is provided. The method comprises the following steps: providing a semiconductor-on-insulator substrate comprising a first substrate, a first insulating layer on the first substrate, and a semiconductor layer on the first insulating layer; patterning the semiconductor layer to form a grating coupler and a body of an active device; forming at least one functional layer on top of each other on a side of the semiconductor layer facing away from the first insulating layer; bonding the at least one functional layer to a carrier substrate on a side of the at least one functional layer facing away from the semiconductor layer; completely removing the first substrate such that an optical transmission channel is provided via the first insulating layer and not via the first substrate between the grating coupler and an outer portion of the semiconductor device on a side of the first insulating layer facing away from the semiconductor layer; forming a plurality of vias extending from a surface of the first insulating layer facing away from the semiconductor layer into the at least one functional layer; and forming a metal wiring layer on one side of the first insulating layer, which is far away from the semiconductor layer, wherein the metal wiring layer is electrically connected with the through holes. An orthogonal projection of the metal wiring layer on the carrier substrate does not overlap an orthogonal projection of the grating coupler on the carrier substrate. The metal routing layer and the plurality of vias partially surround the active device.

According to some embodiments of the present disclosure, there is provided a semiconductor device including: a first insulating layer; a semiconductor layer stacked with the first insulating layer, the semiconductor layer including a grating coupler and a body of an active device; a carrier substrate disposed opposite to the semiconductor layer; at least one functional layer stacked on top of each other between the semiconductor layer and the carrier substrate; a plurality of vias extending from a surface of the first insulating layer facing away from the semiconductor layer into the at least one functional layer; and the metal wiring layer is positioned on one side, away from the semiconductor layer, of the first insulating layer. The metal wiring layer is electrically connected to the plurality of vias, and the metal wiring layer and the plurality of vias partially surround the active device. No semiconductor material is provided on the entire surface of the first insulating layer facing away from the semiconductor layer, so that an optical transmission channel is provided between the grating coupler and an outer portion of the semiconductor device on the side of the first insulating layer facing away from the semiconductor layer via the first insulating layer and not via the semiconductor material.

According to some embodiments of the present disclosure, there is provided a semiconductor integrated circuit including the semiconductor device as described above.

These and other aspects of the disclosure will be apparent from and elucidated with reference to the embodiments described hereinafter.

Drawings

Further details, features and advantages of the disclosure are disclosed in the following description of exemplary embodiments, taken in conjunction with the accompanying drawings, in which:

fig. 1 is a flow chart of a method of fabricating a semiconductor device according to an exemplary embodiment of the present disclosure;

fig. 2A through 2K are schematic diagrams of example structures formed by various steps of the method of fig. 1, according to example embodiments of the present disclosure;

FIG. 3 is a simplified block diagram of a semiconductor integrated circuit according to an exemplary embodiment of the present disclosure; and is

Fig. 4 is a simplified block diagram of a semiconductor integrated circuit according to another exemplary embodiment of the present disclosure.

Detailed Description

It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present disclosure.

Spatially relative terms such as "below 823030; below", "below 8230; lower", "below 8230, below", "above 823030, upper" and the like may be used herein for ease of description to describe the relationship of one element or feature to another element(s) or feature(s) as illustrated in the figures. It will be understood that these spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" or "under" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "below" and "below" \8230 "; can encompass both orientations above and below the 82303030; respectively. Such as "before" or "after" 82303030303030303030303030303030a the terms may similarly be used, for example, to indicate the order in which light passes through the elements. The devices may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly. In addition, it will also be understood that when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may also be present.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items, and the phrase "at least one of a and B" means a alone, B alone, or both a and B.

It will be understood that when an element or layer is referred to as being "on," "connected to," "coupled to" or "adjacent to" another element or layer, it can be directly on, connected to, coupled to or adjacent to the other element or layer or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "directly connected to," "directly coupled to," or "directly adjacent to" another element or layer, there are no intervening elements or layers present. However, neither "on 8230or" directly on 8230can "should be interpreted as requiring a layer to completely cover an underlying layer in any case.

Embodiments of the present disclosure are described herein with reference to schematic illustrations (and intermediate structures) of idealized embodiments of the present disclosure. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the present disclosure should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of the present disclosure.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and/or the present specification and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

In conventional CMOS process compatible silicon photonics, layers of dielectric materials, such as SiN or SiCN, are typically present between different metal layers, which may undesirably block the penetration of light. Therefore, a special mask is usually required to etch away the dielectric material layers to open the areas requiring light transmission (referred to as "windowing"). The windowing process requires etching through multiple layers of dielectric material, making large-scale application of silicon photofabrication difficult. In addition, in a silicon optical chip in which active devices are integrated, in order to achieve reduced microwave loss, improved impedance matching, and refractive index matching, solutions have been proposed: a via is provided that extends from the front side of the silicon photonics chip into the silicon substrate and undercuts a portion of the silicon substrate below the active device. However, this may result in a poor structural stability of the silicon photonics chip. Furthermore, the ability of active devices to resist electromagnetic interference is also a factor to be considered when designing silicon photonics chips.

Embodiments of the present disclosure provide a semiconductor process architecture in which after a front-side process is completed on a semiconductor-on-insulator (soi) substrate, the device is bonded from the front-side to another carrier substrate, and then the sub-insulator substrate material in the soi substrate is completely removed. This provides a solution that may improve the optical and/or electrical performance of the resulting semiconductor device, enabling large-scale mass production of semiconductor-based photonic devices. In addition, a metal shielding structure is designed for the active device, so that interference from external electromagnetic signals is reduced or eliminated.

As used herein, the term "substrate" may refer to a substrate of a diced wafer, or may refer to a substrate of an unslit wafer. Similarly, the terms chip and die may be used interchangeably unless such interchange causes a conflict. It should be understood that the term "layer" includes films and, unless otherwise specified, should not be construed as indicating a vertical or horizontal thickness.

Fig. 1 is a flow chart of a method 100 of fabricating a semiconductor device according to an exemplary embodiment of the present disclosure, and fig. 2A to 2K are schematic diagrams of example structures formed by various steps of the method 100. The method 100 is described below with reference to fig. 1 and fig. 2A through 2K.

At step 110, a semiconductor-on-insulator substrate 210 is provided. As shown in fig. 2A, the semiconductor-on-insulator substrate 210 includes a first substrate 211, a first insulating layer 212 on the first substrate 211, and a semiconductor layer 213 on the first insulating layer 212.

The substrate 210 may be any type of semiconductor-on-insulator substrate. In some embodiments, the semiconductor-on-insulator substrate 210 may be a silicon-on-insulator (SOI) substrate. SOI substrates are readily commercially available and have good properties for integrated photonic devices. In such embodiments, the first substrate 211 may be made of any suitable material (e.g., silicon or germanium). In an example, the first substrate 211 may have a thickness of about 725 um. The first insulating layer 212 may be made of any suitable insulating material (e.g., silicon dioxide) and, in some embodiments, may be referred to generally as a Buried Oxide (BOX) layer. In an example, first insulating layer 212 can have a thickness of about 2 um. The semiconductor layer 213 may be referred to as a semiconductor device layer in which various semiconductor components are formed. In some embodiments, the semiconductor layer 213 may be made of silicon, but the present disclosure is not limited thereto. In an example, the semiconductor layer 213 may have a thickness of about 220 nm. In this context, with reference to the orientation shown in fig. 2A, the upper side of the first insulating layer 212 is referred to as the front side, and the lower side of the first insulating layer 212 is referred to as the back side.

At step 120, the semiconductor layer 213 is patterned to form a grating coupler 215 and a body 217 of the active device, for example, as shown in fig. 2B and 2C. Figure 2B schematically shows the arrangement of the semiconductor-on-insulator substrate 210, the grating coupler 215 and the body 217 of the active device, when viewed from above. Fig. 2C schematically shows a cross-sectional view of an example structure obtained in an optional step after step 120, taken along line AA in fig. 2B, in which additional optional features 216 and 218 (described later) are shown in addition to the grating coupler 215 and body 217. These

optional features

216 and 218 are formed in optional steps subsequent to step 120 and are not shown in fig. 2B for clarity of illustration. It will be appreciated that the size and shape of the grating coupler 215 and the optical waveguide 217 are merely illustrative and are not necessarily to scale.

In embodiments where the semiconductor layer 213 is made of silicon, the silicon grating 215 may be fabricated using any suitable micromachining process (e.g., a bulk silicon machining process). In the case of a bulk silicon process, a portion of silicon material is selectively removed in a semiconductor (silicon) layer 213 according to a design pattern to form a designed micro three-dimensional structure, as illustrated in fig. 2C. Specifically, the patterning process of the silicon grating may include etching, such as wet etching and dry etching. Wet etching can be classified into isotropic etching and anisotropic etching depending on etching rates in different crystal directions in an etching liquid. Dry etching uses physical methods (e.g., sputtering, ion etching) or chemical methods (e.g., reactive ion etching). It will be appreciated that the grating coupler 215 shown in fig. 2B and 2C is merely exemplary, and in other embodiments, the grating coupler 215 may take any other suitable form. Additionally or alternatively, a wide variety of other photonic devices may be formed in the semiconductor layer 213, such as strip optical waveguides, end-couplers, waveguide crossbars or beam splitters.

An active device may simply be considered a device that requires a supply of power to operate. For semiconductor photonic device integration applications, the body 217 of the active device may comprise an optical waveguide, for example. The optical waveguide constitutes an active device together with other elements (e.g., metal interconnects). Such active devices may include, for example, electro-optic modulators, thermo-optic modulators, electro-absorption modulators, or photodetectors. Hereinafter, for convenience of description, an exemplary embodiment of the present disclosure is described using an example in which the body 217 of the active device is an optical waveguide, and the terms body and optical waveguide may thus be used interchangeably, although the present disclosure is not limited thereto. The optical waveguide 217 may be optically coupled to the grating coupler 215 as shown in fig. 2B and 2C. In the example of fig. 2C, the optical waveguide 217 is formed as a ridge optical waveguide including an inner ridge region that is thick and an outer ridge region that is thin on both sides of the inner ridge region, but the present disclosure is not limited thereto.

In some embodiments, optical waveguide 217 along with features 216 and 218 (and associated metal interconnects) form an electro-optic modulator or a thermo-optic modulator. In such embodiments, the method 100 may further comprise: at least one of the first region 216 and the second region 218 of the semiconductor layer 213, which are respectively located at both sides of the optical waveguide 217, is doped before forming at least one functional layer stacked on each other. The orthogonal projections of first region 216 and second region 218 on first insulating layer 212 are contiguous with and do not overlap the orthogonal projection of optical waveguide 217 on first insulating layer 212. In some embodiments, the portion of optical waveguide 217 between first region 216 and second region 218 (hereinafter referred to as the "modulated portion") may also be doped. The first and second regions 216 and 218 (and optionally the modulated portion of the optical waveguide 217) may be doped to a particular type (P-type or N-type, heavily doped or lightly doped) depending on the particular active photonic device to be formed. In an exemplary embodiment of forming an electro-optic modulator, the first region 216 and a sub-portion of the modulated portion that adjoins the first region 216 may be doped to one of a P-type semiconductor and an N-type semiconductor, while the second region 218 and a sub-portion of the modulated portion that adjoins the second region 218 may be doped to the other of a P-type semiconductor and an N-type semiconductor. Thus, the first region 216, the modulated portion, and the second region 218 form a PN junction. By applying a modulation signal to the first region 216 and the second region 218, the carrier concentration in the modulated portion of the optical waveguide 217 can be changed. This in turn causes the refractive index of the modulated portion of the optical waveguide 217 to change, thereby effecting modulation of the light. It will be appreciated that in other embodiments, the electro-optic modulator may be formed in other forms by employing other electrical structures, such as a MOS capacitance type modulator (in which an oxide barrier (oxide barrier) is inserted into the modulated portion of the optical waveguide 217 to form a capacitive structure between the first region 216 and the second region 218) or a PIN type modulator (in which the modulated portion of the optical waveguide 217 is undoped). It will also be appreciated that the electro-optic modulator may employ various optical configurations, such as a Mach-Zehnder interferometer (MZI) or a micro-ring resonator (MRR). In an exemplary embodiment of forming a thermal optical modulator, the first and

second regions

216 and 218 may be doped to heavily doped N-type semiconductor, and the modulated portion of the optical waveguide 217 may not be doped or may be doped to lightly doped N-type semiconductor. By applying a modulation signal at the first region 216 and the second region 218, the modulated portion of the optical waveguide 217 can be caused to generate heat, thereby changing the phase of the optical field in the optical waveguide 217. It will be appreciated that in other embodiments, the thermo-optic modulator may be formed in other forms by employing other electrical structures. For example, by lightly doping only the first region 216 (or the second region 218), heat may be generated by applying a modulation signal across the first region 216 (or the second region 218). The generated heat may be conducted to the modulated portion of the optical waveguide 217 proximate the first region 216 (or the second region 218) to change the phase of the optical field in the optical waveguide 217. It will be appreciated that the modulated portion of the optical waveguide 217, whether an electro-optic modulator or a thermo-optic modulator, may occupy only a segment of the optical waveguide 217 along the direction of light propagation.

After the semiconductor layer 213 is patterned, the removed portions of the semiconductor layer 213 may be filled with a suitable dielectric material (e.g., silicon dioxide) to prevent voids from occurring in the semiconductor layer 213. In an example, silicon dioxide may be deposited in the patterned semiconductor layer 213 by a High Density Plasma (HDP) deposition process.

At step 130, at least one functional layer stacked on top of each other is formed on the side of the semiconductor layer 213 facing away from the first insulating layer 212, for example, as shown in fig. 2D. Fig. 2D schematically shows a cross-sectional view of the example structure obtained in the example step after step 120, taken along the line BB in fig. 2B, and thus the grating coupler 215 is not shown in fig. 2D.

As used herein, the term "functional layer" may refer to any suitable layer having an electrical function and/or an optical function. By way of example and not limitation, the functional layer may include a conductive layer in which elements such as leads, electrodes, and/or antennas are formed and/or an insulating layer for providing insulation.

As shown in fig. 2D, in some embodiments, step 130 includes: a second insulating layer 221 is formed on the side of the semiconductor layer 213 facing away from the first insulating layer 212. The first insulating layer 212 and the second insulating layer 221 have a refractive index smaller than that of the semiconductor layer 213. Examples of first insulator layer 212 and second insulator layer 221 include, but are not limited to, silicon dioxide. In embodiments where the optical waveguide 217 is patterned in the semiconductor layer 213, the presence of the first and second insulating

layers

212, 221 may provide conditions for total internal reflection of optical signals in the optical waveguide 217, improving optical transmission efficiency. Silicon dioxide may also provide passivation for the semiconductor material (e.g., silicon) in semiconductor layer 213. In some examples, the second insulating layer 221 may be formed by Plasma Enhanced Chemical Vapor Deposition (PECVD).

Referring to fig. 2D, in addition to the second insulating layer 221, additional functional layers may be formed according to specific device design requirements. For the purposes of this description, some examples of additional functional layers are listed here: a heating resistor 222b (not shown in fig. 2D), an Interlayer Dielectric Layer (IDL) 223, a signal electrode 224 and a ground electrode 225 including two layers of metals (M1 and M2),

bias electrodes

228 and 229 including one layer of metal (M2), and a plurality of inter-metal dielectric layers (IMDs) formed by repeated stacking of the first dielectric layer 226 and the second dielectric layer 227. These additional functional layers will be further described later. It will be appreciated that while FIG. 2D illustrates an exemplary plurality of functional layers, the type and/or number of functional layers that need to be formed may be determined based on the particular application and/or requirements.

In the example of fig. 2D, at least one functional layer includes a second dielectric layer 227 as the uppermost layer. The uppermost second dielectric layer 227 is also referred to as a third insulating layer in this context. The third insulating layer may be made of oxide (e.g., silicon dioxide). In some embodiments, the thickness of the third insulating layer may be adjustable. This may be accomplished by, for example, oxide deposition and planarization (e.g., chemical Mechanical Polishing (CMP)). A third insulating layer with an adjustable thickness may be advantageous for some photonic devices. For example, for an end-face coupler, the cladding thickness on both the top and bottom sides of semiconductor layer 213 can affect the coupling efficiency. By adjusting (thickening or thinning) the thickness of the third insulating layer to a desired thickness, the coupling efficiency of the end-face coupler can be improved.

At step 140, at least one functional layer is bonded to the carrier substrate 240 on a side of the at least one functional layer facing away from the semiconductor layer 213, for example, as shown in fig. 2E.

Step 140 may be accomplished by a normal bonding process. In the example of fig. 2E, the structure shown in fig. 2D is now flipped such that the third insulating layer 227, which is uppermost in fig. 2D, is now lowermost for bonding with the carrier substrate 240. In some embodiments, the carrier substrate 240 may include a silicon substrate and a silicon dioxide layer on the silicon substrate. In this case, the third insulating layer 227 (made of, for example, silicon dioxide) may be bonded with a silicon dioxide layer in the carrier substrate 240 using a low temperature bonding process. After the bonding is completed, a so-called back side process may be performed on the semiconductor device structure shown in fig. 2E.

In step 150, the first substrate 211 is completely removed. This allows an optical transmission channel to be provided between the grating coupler 215 and the outer part of the semiconductor device on the side of the first insulating layer 212 facing away from the semiconductor layer 213, via the first insulating layer 212 and not via the first substrate 211.

In some embodiments, step 150 may be accomplished by etching. In an embodiment in which the first insulating layer 212 is made of silicon dioxide and the semiconductor layer 213 is made of silicon, etching may be performed using a tetramethylammonium hydroxide (TMAH) solution having a high selectivity ratio to silicon dioxide. Alternatively, the first substrate 211 may be thinned by wet etching, and then the first substrate 211 is completely removed using dry etching. After step 150, the first substrate 211 is completely removed and the first insulating layer 212 is exposed, as shown in fig. 2F.

Complete removal of the first substrate 211 enables the grating coupler 215 (not shown in fig. 2F) in the semiconductor layer 213 to couple in and/or out optical signals from the back side without being affected by the front side dielectric material layer, thereby eliminating the need for a windowing process from the front side. As a result, on the front surface of the grating coupler 215, metal wiring is no longer restricted, providing a higher degree of freedom in design. Moreover, complete removal of the first substrate 211 may optimize the performance of the active devices, e.g., reduced microwave loss, improved impedance matching, and index matching. Such optimization provides additional advantages such as process simplicity and structural robustness compared to the related art of drilling from the front surface and then hollowing out a portion of the substrate. In summary, the method 100 can provide a general process platform, which is advantageous for mass production of semiconductor photonic devices.

In some embodiments, the method 100 may further include: after the first substrate 211 is completely removed, the thickness of the first insulating layer 212 is adjusted. In the case where a thicker first insulating layer 212 is required, the first insulating layer 212 may be thickened by an appropriate process. In an example, the material of first insulating layer 212 is deposited on first insulating layer 212, and then the deposited material is planarized such that first insulating layer 212 on which the material is deposited has a predetermined thickness. For example, the original first insulating layer 212 is made of silicon dioxide and has a thickness of 2um, in which case if a thicker first insulating layer 212 is required, a silicon dioxide material may be deposited on the first insulating layer 212, and the deposited silicon dioxide is then planarized by a CMP process. The resulting first insulating layer 212 can have a thickness of, for example, greater than 2um and less than or equal to 6 um. Of course, in the case where a thinner first insulating layer 212 is required, the first insulating layer 212 may be directly thinned to a predetermined thickness by an appropriate process (e.g., CMP). A first insulating layer 212 having an adjustable thickness may be advantageous for some specific applications. For example, for an end-face coupler, the cladding thickness on both the top and bottom sides of semiconductor layer 213 can affect the coupling efficiency. By thickening the first insulating layer 212, the cladding layers on the upper and lower sides of the semiconductor layer 213 can be made to have substantially equal thicknesses, thereby improving the coupling efficiency of the end-face coupler. For another example, for active photonic devices, a thinner first insulating layer 212 may be advantageous for heat dissipation.

At step 160, a plurality of

vias

255 and 256 are formed extending from the surface of the first insulating layer 212 facing away from the semiconductor layer 213 into the at least one functional layer, for example, as shown in fig. 2G.

In some embodiments, the plurality of through-holes includes at least one first through-hole 255 and at least one second through-hole 256. In the example of fig. 2G, the at least one first via 255 is opposite the at least one second via 256 with respect to the body 217 (specifically, the optical waveguide) of the active device, although this is not required. In an embodiment, vias 255 and 256 may be filled with a conductive material (e.g., tungsten or copper) to provide electrical connectivity.

At step 170, a metal wiring layer 262 is formed on the side of the first insulating layer 212 facing away from the semiconductor layer 213, the metal wiring layer being electrically connected to the plurality of

vias

255 and 256, for example, as shown in fig. 2G. The orthogonal projection of the metal routing layer 262 on the carrier substrate 240 does not overlap the orthogonal projection of the grating coupler 215 (not shown in figure 2G) on the carrier substrate 240. The metal routing layer 262 and the plurality of

vias

255 and 256 partially surround the active device (which in the example of fig. 2G includes the optical waveguide 217, the first and

second regions

216 and 218 on either side of the optical waveguide, and the associated

metal interconnects

231, 232, 224, and 225).

The metal routing layer 262 may be formed of any suitable metal (e.g., aluminum). The plurality of

vias

255 and 256 and metal routing layer 262 form a metal shield structure that can be biased at a fixed potential (e.g., ground), as will be discussed later. The metal shielding structure provides electromagnetic shielding for the active device, so that interference of external electromagnetic signals on the active device is reduced or eliminated. Providing electromagnetic shielding using the metal wiring layer 262 may be compatible with a process of forming metal traces on the back side of the semiconductor device, and thus may be beneficial in reducing the cost of forming the electromagnetic shielding structure.

To bias the metal shielding structures formed by the plurality of

vias

255 and 256 and the metal routing layer 262 to a fixed potential and to construct an active device based on the optical waveguide 217, in some embodiments, associated metal interconnects may be formed in at least one functional layer.

For this purpose, with reference to fig. 2D-2G, the step 130 of forming at least one functional layer stacked on each other may further comprise: on a side of the second insulating layer 221 facing away from the semiconductor layer 213, a signal electrode 224 of an active device, a ground electrode 225 of the active device, a first bias electrode 228 electrically connected to the at least one first via 255, and a second bias electrode 229 electrically connected to the at least one second via 256 are formed. The signal electrode 224 is electrically connected to the first doped region 216 (also referred to as "first doped region") doped in the semiconductor layer 213 through the contact hole 231 for transmitting a modulation signal to the first doped region 216. The ground electrode 225 is electrically connected to the doped second region 218 (also referred to as "second doped region") in the semiconductor layer 213 through the contact hole 232 for bringing the second doped region 218 to the ground potential. The first bias electrode 228 and the second bias electrode 229 are used to bias the metallic shielding structure at a fixed potential. In the example of fig. 2G, the orthogonal projection of signal electrode 224 on first insulating layer 212 is located between the orthogonal projection of at least one first via 255 on first insulating layer 212 and the orthogonal projection of at least one second via 256 on first insulating layer 212. This allows the signal electrode 224 to be effectively shielded by the metal shielding structure, so that the modulation signal transmitted on the signal electrode 224 is protected from external electromagnetic interference, thereby improving the accuracy of the modulation. In this example, the ground electrode 225 is integrally formed with the second bias electrode 229 such that the ground electrode 225 is electrically connected to the second bias electrode 229, and is also electrically connected to the first bias electrode 228 via the metal wiring layer 262 and the first via 255. In another example, the ground electrode 225 may be integrally formed with the first bias electrode 228 or with both the first bias electrode 228 and the second bias electrode 229. The integrally formed process may be achieved by patterning the M2 metal layer.

In some embodiments, the signal electrode 224 extends in a first direction perpendicular to a thickness direction of the first insulating layer 212. In the example of fig. 2G, the first direction may be a light propagation direction defined by the optical waveguide 217, i.e., a direction perpendicular to the paper. In this case, the at least one first through hole 255 may include a plurality of first through holes 255 distributed in the first direction and spaced apart from each other, and the at least one second through hole 256 may include a plurality of second through holes 256 distributed in the first direction and spaced apart from each other. Fig. 2H shows more clearly an example arrangement of metal shield structures and active devices in a perspective view, with extraneous elements omitted for clarity. As shown in fig. 2H, the signal electrode 224 extends along the light propagation direction defined by the optical waveguide 217. A row of first through holes 255 and a row of second through holes 256 are arranged parallel to the extending direction of the signal electrodes 224 at both sides of the optical waveguide 217, and form a three-dimensional metal shielding structure together with the metal wiring layer 262. By doing so, a larger portion of the active device is shielded, thereby improving the electromagnetic shielding effect.

In the above description, the ground electrode 225 and the second bias electrode 229 are shown and described as being of unitary construction, but this is not required. In other embodiments, the ground electrode 225 may be formed separately from the first bias electrode 228 and the second bias electrode 229, such that the ground electrode 225 is not electrically connected to the first bias electrode 228 and the second bias electrode 229, as shown in fig. 2I. In the example of fig. 2I, first bias electrode 228 and second bias electrode 229 may be biased at another fixed potential different from ground potential. This may also provide good electromagnetic shielding.

Fig. 2J schematically illustrates an example arrangement of a metal shielding structure with another active device. In the example of fig. 2J, the optical waveguide 217 constitutes a thermo-optic modulator together with the heating resistor 222b, wherein the heating resistor 222b acts as a heat source, which transfers heat to the optical waveguide 217 when a modulation signal is applied, thereby affecting the mode field distribution thereof, effecting a change in the phase of the optical field. In this example, the step 130 of forming at least one functional layer stacked on top of each other further comprises: on the side of the second insulating layer 221 facing away from the semiconductor layer 213, a heating resistor 222b of an active device is formed; and forming a first bias electrode 228 electrically connected to the at least one first via 255 and a second bias electrode 229 electrically connected to the at least one second via 256 on a side of the heating resistor 222b facing away from the second insulating layer 221. The orthogonal projection of the heating resistor 222b on the first insulating layer 212 at least partially overlaps the orthogonal projection of the optical waveguide 217 on the first insulating layer 212. For clarity of illustration, electrical connections to the heating resistor 222b are not shown in fig. 2J, but it will be understood that electrical connections may be provided to the heating resistor 222b by any suitable means (e.g., metal interconnects similar to the signal and

ground electrodes

224 and 225 and vias 255 or 256). In an example, the heating resistor 222b may be made of titanium nitride, but the present disclosure is not limited thereto. In some embodiments, the heating resistor 222b and other necessary elements may be simultaneously formed by patterning the conductive layer 222 once, thereby simplifying the process.

Similar to the example of fig. 2G and 2H, the heating resistor 222b may extend in a first direction perpendicular to the thickness direction of the first insulating layer 212. In this case, the at least one first through hole 255 may include a plurality of first through holes 255 distributed in the first direction and spaced apart from each other, and the at least one second through hole 256 may include a plurality of second through holes 256 distributed in the first direction and spaced apart from each other. For the sake of brevity, such a stereoscopic arrangement is not shown and is not described in detail.

In the foregoing embodiment, the signal electrode 224 and the ground electrode 225 are shown and described as a stack of two layers of metals M1 and M2, and the first bias electrode 228 and the second bias electrode 229 are shown and described as one layer of metal (specifically, M2), but this is merely exemplary. In other embodiments, the electrodes may take any other suitable configuration. For example,

electrode structures

224 and 225 may be formed as fewer or more layers of metal. The first bias electrode 228 and the second bias electrode 229 may be formed in the metal layer M1, or formed as two or more layers of metal. The claimed subject matter of this disclosure is not limited in this respect.

The respective layers of metals M1 and M2 are electrically connected to each other through vias filled with a conductive material (e.g., copper). A plurality of inter-metal dielectric layers (IMDs) formed by the repeated stacking of the first dielectric layer 226 and the second dielectric layer 227 provide electrical insulation between the metal layers. In an example, the first dielectric layer 226 may be made of silicon nitride and the second dielectric layer 227 may be made of silicon dioxide. Silicon nitride has a better passivation effect, but after its deposition, the defect density at the interface is higher. Silicon dioxide has a passivation effect inferior to silicon nitride, but after its deposition, the defect density at the interface is low. Therefore, the use of the stacked structure of silicon nitride and silicon dioxide provides a combined advantage of both, thereby obtaining a good interlayer insulation effect.

Some exemplary embodiments of the present disclosure have been described above from the perspective of a metal shielding structure. Indeed, embodiments of the present disclosure may include further optional features, which are described below in connection with fig. 2K. Fig. 2K schematically illustrates a cross-sectional view of the semiconductor device formed in an example step following step 120, taken along line AA in fig. 2B.

As shown in fig. 2K, the orthogonal projection of the metal routing layer 262 on the carrier substrate 240 does not overlap the orthogonal projection of the grating coupler 215 on the carrier substrate 240. This ensures that the back side of the grating coupler 215 is free of metal wiring, thereby preventing the coupling efficiency of the grating coupler 215 from being affected. In some embodiments, an anti-oxidation layer may be provided to prevent the metal wiring layer 262 from being oxidized. In the example of fig. 2K, a first oxidation resistant layer 261, a metal wiring layer 262, and a second oxidation resistant layer 263 stacked in this order are formed in a direction away from the first insulating layer 212 such that the metal wiring layer 262 is sandwiched between the upper and lower two oxidation

resistant layers

261 and 263. The oxidation

resistant layers

261 and 263 may be formed of any suitable material, such as titanium nitride.

In some embodiments, the metal routing layer 262 may include a metal isolation frame 270. Fig. 2K also shows some additional details, such as the oxidation

resistant layers

261 and 263 described above. The metal isolation frame 270 serves to prevent optical signals to/from the grating coupler 215 from interfering with other optical elements (e.g., another grating). The orthogonal projection of the metal isolation frame 270 on the carrier substrate 240 may surround the orthogonal projection of the grating coupler 215 on the carrier substrate 240. The metal isolation frame 270 may be formed by patterning the metal routing layer 262 (and potentially the oxidation resistant layers 261 and 263). After patterning, sidewalls of the metal pattern (e.g., the metal isolation frame 270) in the metal wiring layer 262 are exposed. To protect these sidewalls from oxidation, a passivation layer 265 may further be coated on the patterned metal routing layer 262. The passivation layer 265 may be formed of any suitable material (e.g., silicon dioxide).

In some embodiments, the step 130 of forming at least one functional layer stacked on each other may further include: a conductive layer 222 is formed on the side of the second insulating layer 221 facing away from the semiconductor layer 213. As already described above, the conductive layer 222 may be patterned to form the heating resistor 222b. As shown in fig. 2K, the conductive layer 222 may also be patterned to form a first pattern portion 222a, which may serve as an etch stop layer. Then, a dielectric material is covered on the conductive layer 222, and an interlayer dielectric layer 223 is formed. Next, respective contact holes 231 and 232 that penetrate the second insulating layer 221 (in the example of fig. 2K, together with the interlayer dielectric layer 223) and are electrically connected to respective ones of the first and

second regions

216 and 218 are formed. In an embodiment, the contact holes 231 and 232 may be filled with a conductive material (e.g., tungsten or copper) to provide electrical connectivity.

Still referring to fig. 2K, the conductive layer 222 may include respective first pattern portions 222a corresponding to the signal electrode 224 and the ground electrode 225. Although only one first pattern portion 222a corresponding to the ground electrode 225 is shown in the cross-sectional view of fig. 2K, it will be understood that another first pattern portion 222a corresponding to the signal electrode 224 may be present in another different cross-section. An orthogonal projection of each of the respective first pattern portions 222a on the first insulating layer 212 partially overlaps an orthogonal projection of one corresponding one of the signal electrode 224 and the ground electrode 225 on the first insulating layer 212.

To provide electrical connection to the signal electrode 224 and the ground electrode 225, a plurality of back holes 251 may be formed from the back surface. In such embodiments, the method 100 further comprises: before the metal wiring layer 262 (and potentially the first oxidation resistant layer 261) is formed, a plurality of back holes 251 are formed by etching, the plurality of back holes extending from a surface of the first insulating layer 212 facing away from the semiconductor layer 213 to the respective first pattern portions 222a. The respective first pattern portions 222a serve as etch stop layers for the plurality of back holes 251. Then, the etching is continued such that the plurality of back holes 251 penetrate the respective first pattern portions 222a and extend to the signal electrode 224 and the ground electrode 225. In an embodiment, the plurality of back holes 251 may be filled with a conductive material (e.g., tungsten or copper) to provide electrical connectivity. The presence of the first pattern portion 222a provides an advantageous advantage compared to the case without the etch stop layer. Without the first pattern portion 222a, the etching process would stop directly at the metal layer M1, resulting in excessive loss of electrode material and thus possible electrical defects. Due to the presence of the first pattern portion 222a, the etching of the back hole 251 is completed in two stages, thereby allowing more precise control of the amount of loss of the electrode material and thus improving the yield of the product. In some examples, the first pattern portion 222a may be about 150nm from the metal layer M1. It will be understood that while only two back holes 251 corresponding to ground electrodes 225 are shown in the cross-sectional view of fig. 2K, there may be additional back holes 251 corresponding to signal electrodes 224 in a different cross-section. It will also be appreciated that the number of back holes 251 connected to each electrode need not be two, but may be fewer or greater.

After forming the back hole 251, the method 100 may further include: respective pads 260 are formed on the first insulating layer 212 on a side facing away from the semiconductor layer 213, the respective pads 260 being electrically connected to the signal electrode 224 and the ground electrode 225, respectively, via corresponding ones of the plurality of back holes 251. Fig. 2K shows an example structure of the pad 260. In this example, forming the respective pads includes: forming a first oxidation resistant layer 261, a metal wiring layer 262, and a second oxidation resistant layer 263 stacked in this order in a direction away from the first insulating layer 212; patterning the first anti-oxidation layer 261, the metal wiring layer 262, and the second anti-oxidation layer 263 to form respective pad regions; forming a passivation layer 265 covering the patterned second oxidation resistant layer 263; and removing a portion of the passivation layer 265 and the second oxidation resistant layer 263 in each pad region to expose a portion of the metal wiring layer 262 in the pad region. As shown in fig. 2K, a window 266 is opened on the pad 260 so that an external modulation signal can be directly applied to the metal wiring layer 262 in the pad 260 and transmitted to the first and

second regions

216 and 218 in the semiconductor layer 213 through the back hole 251, the signal and

ground electrodes

224 and 225, and the contact holes 231 and 232, thereby realizing electro-optical modulation or thermo-optical modulation as described above. It will be understood that while only the pad 260 corresponding to the ground 225 is shown in the cross-sectional view of fig. 2K, there may be additional pads 260 corresponding to the signal electrodes 224 in a different cross-section.

The method 100 and its various variations are described above with respect to fig. 1 and 2A-2K. It will be understood that these operations are not required to be performed in the particular order described, nor are all required to be performed to achieve desirable results.

Having described embodiments of methods of fabricating semiconductor devices, the structure of the resulting semiconductor devices will be clearly understood. In the following, for completeness, an exemplary embodiment of a semiconductor device is described in connection with fig. 2I, 2J and 2K. Semiconductor device embodiments provide the same or corresponding advantages as method embodiments and a detailed description of these advantages is omitted for the sake of brevity.

As shown in fig. 2I and 2K, the semiconductor device may include: the semiconductor device includes a first insulating layer 212, a semiconductor layer 213 stacked with the first insulating layer 212 and including a grating coupler 215 and a body 217 of an active device, a carrier substrate 240 disposed opposite the semiconductor layer 213, at least one functional layer stacked with each other between the semiconductor layer 213 and the carrier substrate 240, a plurality of through

holes

255 and 256 extending from a surface of the first insulating layer 212 facing away from the semiconductor layer 213 into the at least one functional layer, and a metal wiring layer 262 on a side of the first insulating layer 212 facing away from the semiconductor layer 213. The metal wiring layer 262 is electrically connected to the plurality of

vias

255 and 256, and the metal wiring layer 262 and the plurality of

vias

255 and 256 partially surround the active device. No semiconductor material is provided on the entire surface of the first insulating layer 212 facing away from the semiconductor layer 213, so that an optical transmission channel is provided via the first insulating layer 212 and not via the semiconductor material between the grating coupler 215 and the outer portion of the semiconductor device on the side of the first insulating layer 212 facing away from the semiconductor layer 213.

In some embodiments, the plurality of through-

holes

255 and 256 may include at least one first through-hole 255 and at least one second through-hole 256. The at least one first via 255 is opposite the at least one second via 256 with respect to the body 217 of the active device.

In some embodiments, the at least one functional layer may further comprise: a second insulating layer 221 which is located on the side of the semiconductor layer 213 facing away from the first insulating layer 212. The first insulating layer 212 and the second insulating layer 221 have a refractive index smaller than that of the semiconductor layer 213. The body 217 of the active device includes an optical waveguide that is optically coupled to the grating coupler 215.

In some embodiments, the at least one functional layer may further comprise: a signal electrode 224 of the active device, a ground electrode 225 of the active device, a first bias electrode 228 electrically connected to the at least one first via 255, and a second bias electrode 229 electrically connected to the at least one second via 256, on a side of the second insulating layer 221 facing away from the semiconductor layer 213. The orthogonal projection of signal electrode 224 on first insulating layer 212 is located between the orthogonal projection of at least one first via 255 on first insulating layer 212 and the orthogonal projection of at least one second via 256 on first insulating layer 212.

In some embodiments, the signal electrode 224 extends in a first direction perpendicular to a thickness direction of the first insulating layer 212. The at least one first through hole 255 may include: a plurality of first through holes 255 distributed in the first direction and spaced apart from each other. The at least one second via 256 may include: a plurality of second through holes 256 distributed along the first direction and spaced apart from each other.

In some embodiments, ground electrode 225 is electrically connected to first bias electrode 228 and second bias electrode 229.

In some embodiments, the ground electrode 225 is not electrically connected to the first bias electrode 228 and the second bias electrode 229.

In some embodiments, the semiconductor layer 213 may further include: a first doped region 216 and a second doped region 218 on either side of an optical waveguide 217. The orthogonal projections of the first doped region 216 and the second doped region 218 on the first insulating layer 212 are contiguous with and do not overlap the orthogonal projection of the optical waveguide 217 on the first insulating layer 212. The first and second

doped regions

216 and 218 are electrically connected to the signal and

ground electrodes

224 and 225, respectively, through respective contact holes 231 and 232.

As shown in fig. 2J, in some embodiments, at least one functional layer may further include: the heating resistor 222b of the active device is positioned on the side, away from the semiconductor layer 213, of the second insulating layer 221; a first bias electrode 228 electrically connected to the at least one first via 255, on a side of the heating resistor 222b facing away from the second insulating layer 221; and a second bias electrode 229 electrically connected to the at least one second via 256, on a side of the heating resistor 222b facing away from the second insulating layer 221. The orthogonal projection of the heating resistor 222b on the first insulating layer 212 at least partially overlaps the orthogonal projection of the optical waveguide 217 on the first insulating layer 212.

In some embodiments, the heating resistors 222b extend in a first direction perpendicular to a thickness direction of the first insulating layer 212. The at least one first through hole 255 may include: a plurality of first through holes 255 distributed in the first direction and spaced apart from each other. The at least one second through hole 256 may include: a plurality of second through holes 256 distributed along the first direction and spaced apart from each other.

In some embodiments, the at least one functional layer may further comprise: a conductive layer 222 on the side of the second insulating layer 221 facing away from the semiconductor layer 213.

In some embodiments, the conductive layer 222 may include: corresponding to the respective first pattern portions 222a of the signal electrode 224 and the ground electrode 225. An orthogonal projection of each of the respective first pattern portions 222a on the first insulating layer 212 partially overlaps an orthogonal projection of one corresponding one of the signal electrode 224 and the ground electrode 225 on the first insulating layer 212. The semiconductor device may further include a plurality of back holes 251 and corresponding pads 260. A plurality of back holes 251 extend from the surface of the first insulating layer 212 facing away from the semiconductor layer 213 to the signal electrode 224 and the ground electrode 225. The respective pads 260 are located on a side of the first insulating layer 212 facing away from the semiconductor layer 213, and are electrically connected to the signal electrode 224 and the ground electrode 225, respectively, via corresponding ones of the plurality of back holes 251.

In some embodiments, the respective pads 260 may include: a first oxidation resistant layer 261, a metal wiring layer 262, and a second oxidation resistant layer 263 stacked in this order in a direction away from the first insulating layer 212. The semiconductor device may further include: a passivation layer 265 covering the second oxidation resistant layer 263. The passivation layer 265 and the second oxidation resistant layer 263 in each pad are provided with a window 266 to expose a portion of the metal wiring layer 262 in the pad.

In some examples, first insulating layer 212 may have a thickness of 2um to 6 um.

In some embodiments, the metal routing layer 262 may include a metal isolation frame 270. The orthogonal projection of the metal isolation frame 270 on the carrier substrate 240 encompasses the orthogonal projection of the grating coupler 215 on the carrier substrate 240.

Fig. 3 is a simplified block diagram of a semiconductor integrated circuit 300 in which both electronic and photonic devices are fabricated on a single hybrid die (hybrid) according to an exemplary embodiment of the present disclosure. In one example, the semiconductor integrated circuit 300 includes a single hybrid communication module made of a silicon material. The module comprises a substrate member 310 having a surface area, an electrical silicon circuit 320 overlying a first portion of the surface area, a silicon photonic device 330 overlying a second portion of the surface area, a communications bus coupled between the electrical silicon circuit 320 and the silicon photonic device 330, an optical interface 331 coupled to the silicon photonic device 330, and an electrical interface 321 coupled to the electrical silicon circuit 320. Silicon photonic device 330 may embody any of the semiconductor devices described above and variations thereof.

Fig. 4 is a simplified block diagram of a semiconductor integrated circuit 400 according to an example embodiment of the present disclosure. In one example, semiconductor integrated circuit 400 includes a single hybrid communication module. The module includes a substrate member 410, which may be a Printed Circuit Board (PCB) or other member, having a surface area. The module includes an electrical silicon circuit 420 overlying a first portion of the surface area, a silicon photonic device 430 overlying a second portion of the surface area, a communication bus 440 (e.g., a PCB trace) coupled between the electrical silicon circuit 420 and the silicon photonic device 430, an optical interface 431 coupled to the silicon photonic device 430, and an electrical interface 421 coupled to the electrical silicon circuit 420. Silicon photonic device 430 may embody any of the semiconductor devices described above and variations thereof.

While the disclosure has been illustrated and described in detail in the drawings and foregoing description, such illustration and description are to be considered illustrative and exemplary and not restrictive; the present disclosure is not limited to the disclosed embodiments. Variations to the disclosed embodiments can be understood and effected by those skilled in the art in practicing the claimed subject matter, from a study of the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other elements or steps not listed, the indefinite article "a" or "an" does not exclude a plurality, and the term "a plurality" means two or more. The mere fact that certain measures are recited in mutually different dependent claims does not indicate that a combination of these measures cannot be used to advantage.

Claims

1. A method of fabricating a semiconductor device, comprising:

providing a semiconductor-on-insulator substrate comprising a first substrate, a first insulating layer on the first substrate, and a semiconductor layer on the first insulating layer;

patterning the semiconductor layer to form a grating coupler and a body of an active device;

forming at least one functional layer on top of each other on a side of the semiconductor layer facing away from the first insulating layer;

bonding the at least one functional layer to a carrier substrate on a side of the at least one functional layer facing away from the semiconductor layer;

completely removing the first substrate such that an optical transmission channel is provided through the first insulating layer and not through the first substrate between the grating coupler and an outer portion of the semiconductor device on a side of the first insulating layer facing away from the semiconductor layer;

forming a plurality of vias extending from a surface of the first insulating layer facing away from the semiconductor layer into the at least one functional layer; and

forming a metal wiring layer on a side of the first insulating layer facing away from the semiconductor layer, the metal wiring layer being electrically connected to the plurality of through holes, wherein an orthogonal projection of the metal wiring layer on the carrier substrate does not overlap an orthogonal projection of the grating coupler on the carrier substrate, and wherein the metal wiring layer and the plurality of through holes partially surround the active device.

2. The method of claim 1, wherein the plurality of vias comprises at least one first via and at least one second via, the at least one first via being opposite the at least one second via with respect to a body of the active device.

3. The method of claim 2, wherein the first and second light sources are selected from the group consisting of a red light source, a green light source, and a blue light source,

wherein the forming at least one functional layer stacked on top of each other comprises: forming a second insulating layer on the side of the semiconductor layer facing away from the first insulating layer,

wherein the first insulating layer and the second insulating layer have a refractive index smaller than that of the semiconductor layer, an

Wherein the body of the active device includes an optical waveguide optically coupled to the grating coupler.

4. The method of claim 3, wherein said forming at least one functional layer stacked on top of each other further comprises:

forming a signal electrode of the active device, a ground electrode of the active device, a first bias electrode electrically connected to the at least one first via, and a second bias electrode electrically connected to the at least one second via on a side of the second insulating layer facing away from the semiconductor layer,

wherein an orthogonal projection of the signal electrode on the first insulating layer is located between an orthogonal projection of the at least one first via on the first insulating layer and an orthogonal projection of the at least one second via on the first insulating layer.

5. The method of claim 4, wherein the first and second light sources are selected from the group consisting of a red light source, a green light source, and a blue light source,

wherein the signal electrode extends in a first direction perpendicular to a thickness direction of the first insulating layer,

wherein the at least one first via comprises: a plurality of first through holes distributed along the first direction and spaced apart from each other, an

Wherein the at least one second via comprises: a plurality of second through holes distributed along the first direction and spaced apart from each other.

6. The method of claim 4, wherein the ground electrode is integrally formed with at least one of the first and second biasing electrodes such that the ground electrode is electrically connected with the first and second biasing electrodes.

7. The method of claim 4, wherein the ground electrode is formed separately from the first and second biasing electrodes such that the ground electrode is not electrically connected to the first and second biasing electrodes.

8. The method of claim 4, further comprising:

doping at least one of a first region and a second region of the semiconductor layer, which are respectively located on both sides of the optical waveguide, before the forming of the at least one functional layer stacked on top of each other,

wherein orthogonal projections of the first and second regions on the first insulating layer are contiguous and non-overlapping with an orthogonal projection of the optical waveguide on the first insulating layer, an

Wherein the first region and the second region are electrically connected to the signal electrode and the ground electrode, respectively, through respective contact holes.

9. The method of claim 3, wherein said forming at least one functional layer stacked on top of each other further comprises:

forming a heating resistor of the active device on one side of the second insulating layer, which is far away from the semiconductor layer; and

forming a first bias electrode electrically connected with the at least one first via hole and a second bias electrode electrically connected with the at least one second via hole on a side of the heating resistor facing away from the second insulating layer,

wherein an orthogonal projection of the heating resistor on the first insulating layer at least partially overlaps an orthogonal projection of the optical waveguide on the first insulating layer.

10. The method of claim 9, wherein the first and second light sources are selected from the group consisting of a red light source, a green light source, and a blue light source,

wherein the heating resistor extends in a first direction perpendicular to a thickness direction of the first insulating layer,

11. The method of any one of claims 1-10, further comprising:

thinning the first insulating layer to a predetermined thickness before the forming of the plurality of vias.

12. A semiconductor device, comprising:

a first insulating layer;

a semiconductor layer stacked with the first insulating layer, the semiconductor layer including a grating coupler and a body of an active device;

a carrier substrate disposed opposite to the semiconductor layer;

at least one functional layer stacked on top of each other between the semiconductor layer and the carrier substrate;

a plurality of through-holes extending from a surface of the first insulating layer facing away from the semiconductor layer into the at least one functional layer; and

a metal wiring layer on a side of the first insulating layer facing away from the semiconductor layer, the metal wiring layer being electrically connected to the plurality of vias, and the metal wiring layer and the plurality of vias partially surrounding the active device,

wherein no semiconductor material is provided on the entire surface of the first insulating layer facing away from the semiconductor layer, such that an optical transmission channel is provided between the grating coupler and an outer portion of the semiconductor device on a side of the first insulating layer facing away from the semiconductor layer via the first insulating layer and not via the semiconductor material.

13. The semiconductor device of claim 12, wherein the plurality of vias comprises at least one first via and at least one second via, the at least one first via being opposite the at least one second via with respect to a body of the active device.

14. The semiconductor device as set forth in claim 13,

wherein the at least one functional layer further comprises: a second insulating layer on a side of the semiconductor layer facing away from the first insulating layer,

15. The semiconductor device of claim 14, wherein said at least one functional layer further comprises: a signal electrode of the active device, a ground electrode of the active device, a first bias electrode electrically connected to the at least one first via, and a second bias electrode electrically connected to the at least one second via on a side of the second insulating layer facing away from the semiconductor layer,

16. The semiconductor device as set forth in claim 15,

17. The semiconductor device of claim 15, wherein the ground electrode is electrically connected to the first and second bias electrodes.

18. The semiconductor device of claim 15, wherein the ground electrode is not electrically connected to the first and second bias electrodes.

19. The semiconductor device as set forth in claim 15,

wherein the semiconductor layer further comprises: a first doped region and a second doped region respectively located on both sides of the optical waveguide,

wherein an orthogonal projection of the first and second doped regions on the first insulating layer is contiguous with and does not overlap an orthogonal projection of the optical waveguide on the first insulating layer, an

Wherein the first and second doped regions are electrically connected to the signal electrode and the ground electrode through respective contact holes, respectively.

20. The semiconductor device of claim 14, wherein said at least one functional layer further comprises:

the heating resistor of the active device is positioned on one side, away from the semiconductor layer, of the second insulating layer;

the first bias electrode is electrically connected with the at least one first through hole and is positioned on one side, away from the second insulating layer, of the heating resistor; and

a second bias electrode electrically connected to the at least one second via and located on a side of the heating resistor facing away from the second insulating layer,

21. The semiconductor device as set forth in claim 20,

22. A semiconductor integrated circuit comprising the semiconductor device according to any one of claims 12 to 21.