CN111564385A - Rotary cleaning device - Google Patents
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- CN111564385A CN111564385A CN202010079693.3A CN202010079693A CN111564385A CN 111564385 A CN111564385 A CN 111564385A CN 202010079693 A CN202010079693 A CN 202010079693A CN 111564385 A CN111564385 A CN 111564385A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 147
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 60
- 239000007788 liquid Substances 0.000 claims abstract description 29
- 239000000203 mixture Substances 0.000 claims abstract description 8
- 230000002093 peripheral effect Effects 0.000 claims description 54
- 230000002265 prevention Effects 0.000 claims description 49
- 238000005406 washing Methods 0.000 claims description 12
- 238000010981 drying operation Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 abstract description 10
- 239000007921 spray Substances 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 21
- 239000004065 semiconductor Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 12
- 239000012530 fluid Substances 0.000 description 7
- 239000011259 mixed solution Substances 0.000 description 6
- 238000005108 dry cleaning Methods 0.000 description 5
- 230000003028 elevating effect Effects 0.000 description 5
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000003754 machining Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
- B05B7/00—Spraying apparatus for discharge of liquids or other fluent materials from two or more sources, e.g. of liquid and air, of powder and gas
- B05B7/02—Spray pistols; Apparatus for discharge
- B05B7/04—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge
- B05B7/0416—Spray pistols; Apparatus for discharge with arrangements for mixing liquids or other fluent materials before discharge with arrangements for mixing one gas and one liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B5/00—Cleaning by methods involving the use of air flow or gas flow
- B08B5/02—Cleaning by the force of jets, e.g. blowing-out cavities
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/02—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by distortion, beating, or vibration of the surface to be cleaned
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Sink And Installation For Waste Water (AREA)
- Centrifugal Separators (AREA)
- Power Steering Mechanism (AREA)
Abstract
提供旋转清洗装置,其确保干燥的被清洗物不会再次沾湿。旋转清洗装置(1)具有:能够水平移动的喷嘴(60),其喷射清洗水与空气的混合液;飞散防止罩(5),其围绕工作台(30),以便使欲从旋转的工作台飞散的混合液向下方流动;以及单元(16),其使防止罩升降。防止罩包含:环状的围绕板(51),其形成为剖面从能够供工作台通过的开口(50)呈逐渐展开状倾斜;侧板(52),其包围围绕板,在工作台升降方向上延伸;以及上板(53),其将侧板和围绕板连接,该旋转清洗装置还具有飞散防止部(7),在从喷嘴喷射空气而使清洗后的被清洗物外周缘(Wd)干燥时,为了使上板的上表面上所积存的水不飞溅,该飞散防止部使空气的势力不作用于上板的上表面上所积存的水。
A rotary cleaning unit is provided, which ensures that the dry items to be cleaned do not get wet again. The rotary cleaning device (1) has: a horizontally movable nozzle (60) that sprays a mixture of cleaning water and air; The scattered mixed liquid flows downward; and a unit (16) that lifts and lowers the preventing cover. The preventing cover comprises: an annular surrounding plate (51) formed such that the cross section is inclined gradually from the opening (50) through which the worktable can pass; and an upper plate (53) connecting the side plate and the surrounding plate, and the rotary cleaning device further has a scattering preventing portion (7), which sprays air from the nozzle to make the outer periphery (Wd) of the cleaned object to be cleaned. In order to prevent the water accumulated on the upper surface of the upper plate from splashing during drying, the scattering preventing portion prevents the force of the air from acting on the water accumulated on the upper surface of the upper plate.
Description
技术领域technical field
本发明涉及对半导体晶片等被清洗物进行清洗的旋转清洗装置。The present invention relates to a spin cleaning apparatus for cleaning objects to be cleaned, such as semiconductor wafers.
背景技术Background technique
利用磨削磨具对半导体晶片等被加工物进行磨削的磨削装置和利用研磨垫对被加工物进行研磨的研磨装置具有旋转清洗装置,该旋转清洗装置使保持着加工后的被加工物的旋转工作台高速旋转并一边对被加工物提供清洗水一边进行清洗(例如参照专利文献1)。A grinding apparatus that grinds a workpiece such as a semiconductor wafer with a grinding tool and a polishing apparatus that grinds a workpiece with a polishing pad have a rotary cleaning device that holds the workpiece after processing. The rotary table of this type rotates at a high speed to wash the workpiece while supplying washing water (for example, refer to Patent Document 1).
专利文献1:日本特开2014-180739号公报Patent Document 1: Japanese Patent Laid-Open No. 2014-180739
当被加工物被支承于基质(支承基板)时,加工屑堆积在基质的外周与被加工物的外周之间,因此需要积极地对被加工物的外周进行清洗。因此,向被加工物的外周吹送将水和清洗水混合而成的二流体而将加工屑去除。另外,加工屑容易堆积在基质的外周与被加工物的外周之间的原因之一例如是因为:被加工物的外周缘按照成为剖面圆弧状的方式进行了倒角,在基质与被加工物的边界形成有凹陷。When the workpiece is supported by the substrate (support substrate), machining debris accumulates between the outer periphery of the substrate and the outer periphery of the workpiece, and therefore it is necessary to actively clean the outer periphery of the workpiece. Therefore, a two-fluid mixture of water and washing water is blown to the outer periphery of the workpiece to remove machining debris. In addition, one of the reasons why machining chips tend to accumulate between the outer periphery of the substrate and the outer periphery of the workpiece is, for example, that the outer periphery of the workpiece is chamfered so as to have an arc-shaped cross-section, and the substrate and the workpiece are chamfered. The boundary of the object is formed with a depression.
并且,在旋转清洗装置中,为了使所吹送的二流体不在被加工物的上表面上卷起而再次附着于被加工物上,在旋转工作台的周围具有围绕被加工物的斜面,当受到旋转工作台的旋转所带来的离心力的清洗废液从被加工物朝向外侧放射时,在该斜面上下降,落入到排水容器等而排出。即,旋转清洗装置具有围绕对被加工物进行保持的旋转工作台的飞散防止罩。In addition, in the rotary cleaning device, in order to prevent the blown second fluid from being rolled up on the upper surface of the workpiece and re-adhering to the workpiece, there is an inclined surface surrounding the workpiece around the rotary table. When the cleaning waste liquid caused by the centrifugal force caused by the rotation of the rotary table is radiated outward from the workpiece, it descends on the slope, falls into a drainage container or the like, and is discharged. That is, the rotary cleaning apparatus has a scattering prevention cover that surrounds a rotary table that holds the workpiece.
另外,在进行基于二流体的清洗后,容易在基质的外周与被加工物的外周的边界积存水滴,因此向清洗后的被加工物的外周积极地吹送空气,使基质的外周与被加工物的外周的边界干燥。In addition, after the two-fluid cleaning is performed, water droplets tend to accumulate on the boundary between the outer periphery of the substrate and the outer periphery of the workpiece. Therefore, air is actively blown to the outer periphery of the cleaned workpiece, and the outer periphery of the substrate and the workpiece are blown together. The peripheral border is dry.
但是,当积极地利用二流体对被加工物的外周部分进行清洗时,有时会在飞散防止罩上形成水洼。另外,还存在如下的问题:为了使被加工物的外周部分干燥,喷射到外周部分的空气使积存于飞散防止罩上的水飞溅而会使干燥后的被加工物再次沾湿。However, when the outer peripheral portion of the workpiece is actively cleaned with the two fluids, puddles may be formed on the scattering prevention cover. In addition, in order to dry the outer peripheral portion of the workpiece, the air jetted to the outer peripheral portion splashes the water accumulated in the scattering prevention cover, and the dried workpiece is wetted again.
发明内容SUMMARY OF THE INVENTION
由此,本发明的目的在于提供旋转清洗装置,其能够确保清洗后已干燥的被加工物不会再次沾湿。Therefore, an object of the present invention is to provide a rotary cleaning device capable of ensuring that the workpiece that has been dried after cleaning is not wetted again.
根据本发明,提供旋转清洗装置,其具有:旋转工作台,其具有对被清洗物进行保持的保持面;旋转单元,其使该旋转工作台旋转;清洗喷嘴,其对该旋转工作台所保持的被清洗物喷射清洗水与空气的混合液;水平移动单元,其使该清洗喷嘴在该旋转工作台的上方水平移动;飞散防止罩,其围绕该旋转工作台,以便因对该清洗喷嘴喷射到被清洗物的混合液赋予该旋转工作台旋转所带来的离心力而使欲从该旋转工作台呈放射状飞散的混合液向下方流动;以及升降单元,其使该飞散防止罩沿着使该旋转工作台旋转的旋转轴的轴向进行升降,其中,该飞散防止罩具有:开口,其能够供该旋转工作台通过;环状的围绕板,其形成为从该开口起剖面呈逐渐扩展状倾斜;侧板,其包围该围绕板,在该旋转工作台的升降方向上延伸;以及上板,其将该侧板和该围绕板的下端连接,该旋转清洗装置还具有飞散防止部,在将该开口定位于比该旋转工作台所保持的被清洗物的上表面靠上的位置、从该清洗喷嘴喷射该混合液而对被清洗物进行清洗、然后从该清洗喷嘴喷射空气而使被清洗物干燥的一系列的清洗干燥动作中,在该清洗后从该清洗喷嘴喷射空气而使被清洗物的外周缘干燥时,为了使该飞散防止罩的该上板的上表面上所积存的水不飞溅,所述飞散防止部使从该清洗喷嘴喷射的空气的势力不作用于该上板的上表面上所积存的水。According to the present invention, there is provided a rotary cleaning apparatus including: a rotary table having a holding surface for holding an object to be cleaned; a rotary unit that rotates the rotary table; and a cleaning nozzle that holds the rotary table The object to be cleaned is sprayed with a mixture of cleaning water and air; a horizontal moving unit makes the cleaning nozzle move horizontally above the rotary table; a scattering prevention cover surrounds the rotary table so that the cleaning nozzle is sprayed to The mixed liquid of the object to be cleaned imparts centrifugal force brought about by the rotation of the rotary table, so that the mixed liquid to be scattered radially from the rotary table flows downward; The swivel shaft of the table rotates in an axial direction, wherein the scattering prevention cover has an opening through which the rotary table can pass, and an annular surrounding plate formed so as to gradually expand in cross section from the opening and incline. a side plate, which surrounds the surrounding plate, and extends in the lifting direction of the rotary table; The opening is positioned above the upper surface of the object to be cleaned held by the rotary table, the mixture is sprayed from the cleaning nozzle to clean the object to be cleaned, and air is sprayed from the cleaning nozzle to clean the object to be cleaned In a series of cleaning and drying operations of drying, when the outer periphery of the object to be cleaned is dried by jetting air from the cleaning nozzle after the cleaning, water accumulated on the upper surface of the upper plate of the scattering prevention cover is prevented from being removed. The scattering prevention part prevents the force of the air jetted from the cleaning nozzle from acting on the water accumulated on the upper surface of the upper plate.
优选所述飞散防止部包含:斜面板,其沿着所述清洗喷嘴的移动轨迹而从所述飞散防止罩的所述开口朝向外周缘在所述上板上延伸,该斜面板的该开口侧高而该外周缘侧低;以及排水口,其形成于该外周缘,使水从该斜面板的下端侧的缘落下。Preferably, the scattering preventing portion includes a sloped plate extending from the opening of the scattering preventing cover toward the outer peripheral edge of the upper plate along the movement trajectory of the cleaning nozzle, the sloped plate on the side of the opening. high and the outer peripheral edge side is low; and a water discharge opening formed in the outer peripheral edge to allow water to fall from the edge of the lower end side of the inclined plate.
作为代替方案,所述飞散防止部由沿着所述清洗喷嘴的移动轨迹而配设于所述飞散防止罩的所述上板上的多孔质部件构成。As an alternative, the said scattering prevention part is comprised by the porous member arrange|positioned on the said upper plate of the said scattering prevention cover along the movement trajectory of the said cleaning nozzle.
根据本发明的旋转清洗装置,能够利用飞散防止部吸收空气的势力而使积存于飞散防止罩的上板的上表面的水不因空气而飞溅。因此,能够防止因空气而飞溅的水滴再次附着于干燥的被清洗物上。According to the rotary cleaning device of the present invention, it is possible to prevent the water accumulated on the upper surface of the upper plate of the scattering prevention cover from being splashed by the air by absorbing the force of the air by the scattering preventing portion. Therefore, it is possible to prevent the water droplets splashed by the air from adhering to the dry cleaning object again.
飞散防止部包含:斜面板,其沿着清洗喷嘴的移动轨迹而从飞散防止罩的开口朝向外周缘在上板上延伸,该斜面板的开口侧高而外周缘侧低;以及排水口,其形成于外周缘,使水从斜面板的下端侧的缘落下,在该情况下,在使被清洗物的外周缘干燥时,使从清洗喷嘴喷射的空气的势力不于上板的上表面上所积存的水,从而能够使积存于上板的上表面的水不因空气而飞溅。因此,能够防止因空气而飞溅的水滴再次附着于干燥的被清洗物上。The scattering preventing portion includes: a sloping plate extending on the upper plate from the opening of the scattering preventing cover toward the outer periphery along the movement trajectory of the cleaning nozzle, the sloping plate having an opening side high and an outer peripheral side lower; and a drain port It is formed on the outer peripheral edge and causes water to fall from the edge of the lower end side of the inclined plate. In this case, when drying the outer peripheral edge of the object to be cleaned, the force of the air jetted from the cleaning nozzle is prevented from reaching the upper surface of the upper plate. The accumulated water can prevent the water accumulated on the upper surface of the upper plate from being splashed by the air. Therefore, it is possible to prevent the water droplets splashed by the air from adhering to the dry cleaning object again.
在飞散防止部由沿着清洗喷嘴的移动轨迹而配设于飞散防止罩的上板上的多孔质部件构成的情况下,在使被清洗物的外周缘干燥时,使从清洗喷嘴喷射的空气的势力不作用于上板的上表面上所积存的水,从而能够使积存于上板的上表面的水不因空气而飞溅。因此,能够防止因空气而飞溅的水滴再次附着于干燥的被清洗物上。In the case where the scattering preventing portion is composed of a porous member disposed on the upper plate of the scattering preventing cover along the movement locus of the cleaning nozzle, when drying the outer periphery of the object to be cleaned, the air ejected from the cleaning nozzle is The force of the upper plate does not act on the water accumulated on the upper surface of the upper plate, so that the water accumulated on the upper surface of the upper plate can be prevented from being splashed by the air. Therefore, it is possible to prevent the water droplets splashed by the air from adhering to the dry cleaning object again.
附图说明Description of drawings
图1是示出飞散防止部具有斜面板和排水口的旋转清洗装置的一例的立体图。FIG. 1 is a perspective view showing an example of a rotary cleaning apparatus having a sloping plate and a water outlet in a scattering prevention portion.
图2是示出将飞散防止罩拉下的状态的旋转清洗装置的一例的立体图。FIG. 2 is a perspective view showing an example of the rotary cleaning apparatus in a state where the scattering prevention cover is pulled down.
图3是示出飞散防止部是配设于飞散防止罩的上板上的多孔质部件的旋转清洗装置的一例的立体图。3 is a perspective view showing an example of a rotary cleaning apparatus in which the scattering prevention portion is a porous member disposed on the upper plate of the scattering prevention cover.
图4是对在飞散防止部具有斜面板和排水口的旋转清洗装置中从清洗喷嘴喷射空气而使被清洗物的外周缘干燥的状态进行说明的剖视图。4 is a cross-sectional view illustrating a state in which the outer peripheral edge of the object to be cleaned is dried by spraying air from the cleaning nozzle in the rotary cleaning device having the sloping plate and the drain port in the scattering prevention portion.
图5是对在飞散防止部是配设于飞散防止罩的上板上的多孔质部件的旋转清洗装置中从清洗喷嘴喷射空气而使被清洗物的外周缘干燥的状态进行说明的剖视图。5 is a cross-sectional view illustrating a state in which the outer periphery of the object to be cleaned is dried by jetting air from a cleaning nozzle in a rotary cleaning device in which the scattering preventing portion is a porous member disposed on the upper plate of the scattering preventing cover.
图6是对在以往的旋转清洗装置中从清洗喷嘴喷射混合液而对被清洗物进行清洗的状态进行说明的剖视图。6 is a cross-sectional view for explaining a state in which a mixed liquid is sprayed from a cleaning nozzle to clean a to-be-cleaned object in a conventional rotary cleaning device.
图7是对在以往的旋转清洗装置中喷射空气而使被清洗物的外周缘干燥的状态进行说明的剖视图。7 is a cross-sectional view illustrating a state in which the outer peripheral edge of the object to be cleaned is dried by spraying air in the conventional rotary cleaning apparatus.
标号说明Label description
W:被清洗物;Wb:被清洗物的上表面;Wd:被清洗物的外周缘;W1:半导体晶片;W2:基质;1:旋转清洗装置;16:升降单元;30:旋转工作台;300:吸附部;300a:保持面;301:框体;32:旋转单元;320:旋转轴;321:电动机;305:裙部;2:容器部;20:壳体;200:外周板;201:内周板;202:底板;21:支架罩;22:上部罩;40:水平移动单元;400:旋转轴部;401:臂部;402:旋转电动机;60:清洗喷嘴;600:喷射口;69:水源;68:空气源;5:飞散防止罩;50:开口;51:围绕板;52:侧板;53:上板;7:飞散防止部;70:斜面板;71:排水口;7A:由多孔质部件构成的飞散防止部;1B:以往的旋转清洗装置。W: object to be cleaned; Wb: upper surface of object to be cleaned; Wd: outer periphery of object to be cleaned; W1: semiconductor wafer; W2: substrate; 1: rotary cleaning device; 16: lifting unit; 30: rotary table; 300: suction part; 300a: holding surface; 301: frame body; 32: rotating unit; 320: rotating shaft; 321: motor; 305: skirt part; 2: container part; : inner peripheral plate; 202: bottom plate; 21: bracket cover; 22: upper cover; 40: horizontal movement unit; 400: rotating shaft part; 401: arm part; 402: rotating motor; 60: cleaning nozzle; ;69: Water source; 68: Air source; 5: Scatter prevention cover; 50: Opening; 51: Surrounding plate; 52: Side plate; 53: Upper plate; ; 7A: a scattering prevention part composed of a porous member; 1B: a conventional rotary cleaning device.
具体实施方式Detailed ways
图1所示的旋转清洗装置1具有:旋转工作台30,其具有对被清洗物W进行保持的保持面300a;旋转单元32,其使旋转工作台30旋转;清洗喷嘴60,其对旋转工作台30所保持的被清洗物W喷射清洗水与空气的混合液(二流体);水平移动单元40,其使清洗喷嘴60在旋转工作台30的上方水平移动;飞散防止罩5,其围绕旋转工作台30,以便因对清洗喷嘴60喷射到被清洗物W的混合液赋予旋转工作台30旋转所带来的离心力而使欲从旋转工作台30呈放射状飞散的混合液向下方流动;以及升降单元16,其使飞散防止罩5沿着使旋转工作台30旋转的旋转轴320的轴向(Z轴方向)升降。旋转清洗装置1可以单独使用,另外也可以组装于磨削装置、研磨装置、切削装置、或具有多个这些装置的功能的集群型装置等而使用。The rotary cleaning apparatus 1 shown in FIG. 1 includes: a rotary table 30 having a
被清洗物W例如是所谓的贴合晶片。贴合晶片是利用粘接剂等将圆形的半导体晶片W1与大致同径的基质(支承基板)W2贴合而成的,将半导体晶片W1和基质W2作为一体进行操作加工,从而能够提高较薄的半导体晶片W1的操作性,并且能够防止加工时的半导体晶片W1的翘曲或破损。The object to be cleaned W is, for example, a so-called bonded wafer. The bonding wafer is formed by bonding a circular semiconductor wafer W1 and a substrate (supporting substrate) W2 of approximately the same diameter with an adhesive or the like, and processing the semiconductor wafer W1 and the substrate W2 as one body can improve the performance. The handleability of the thin semiconductor wafer W1 can be prevented, and the warpage or breakage of the semiconductor wafer W1 during processing can be prevented.
半导体晶片W1例如是由硅母材等构成的圆形的晶片,在图1中朝向下方的半导体晶片W1的正面Wa上形成有多个器件,并粘贴有基质W2进行保护。与正面Wa相反的一侧的半导体晶片W1的背面Wb是实施了磨削加工的面,成为要实施被清洗物W的清洗的上表面Wb。另外,除了硅以外,被清洗物W可以由砷化镓、蓝宝石、陶瓷、树脂、氮化镓或碳化硅等构成。The semiconductor wafer W1 is, for example, a circular wafer made of a silicon base material or the like, a plurality of devices are formed on the front surface Wa of the semiconductor wafer W1 facing downward in FIG. 1 , and a substrate W2 is attached for protection. The back surface Wb of the semiconductor wafer W1 on the opposite side to the front surface Wa is the surface to which the grinding process is performed, and becomes the upper surface Wb on which the cleaning of the object to be cleaned W is performed. In addition to silicon, the object to be cleaned W may be composed of gallium arsenide, sapphire, ceramics, resin, gallium nitride, silicon carbide, or the like.
另外,被清洗物W例如可以仅为由硅母材等构成的圆形的半导体晶片W1。另外,被清洗物W也可以是所谓的TAIKO晶片:对在正面Wa上形成有器件的半导体晶片W1的背面Wb中的与器件区域对应的区域进行磨削而形成圆形状的凹部,在与围绕器件区域的外周剩余区域对应的背面Wb的区域形成增强用的环状的凸部。In addition, the to-be-cleaned object W may be only the circular semiconductor wafer W1 which consists of a silicon base material etc., for example. In addition, the cleaning object W may be a so-called TAIKO wafer: a region corresponding to the device region in the rear surface Wb of the semiconductor wafer W1 having the device formed on the front surface Wa is ground to form a circular concave portion, and a circular concave portion is formed on the back surface Wb of the semiconductor wafer W1 having the devices formed on the front surface Wa. The region of the back surface Wb corresponding to the remaining peripheral region of the device region forms an annular convex portion for reinforcement.
旋转清洗装置1具有对所述构成要素进行收纳的容器部2。容器部2具有:其外形例如为俯视多边形状的壳体20;支架罩21,其从壳体20的后部侧(+X方向侧)的上端面竖立设置;以及上部罩22,其与支架罩21连接,从上方覆盖壳体20。在从+Z方向观察的情况下,上部罩22具有与壳体20相同的平面形状,其+Y方向侧的端部利用螺栓等紧固件固定于支架罩21的上端部。The rotary cleaning apparatus 1 has the
壳体20包含:外周板200;图4所示的内周板201;以及与外周板200的下端和内周板201的下端连接的底板202。通过外周板200、内周板201以及底板202围绕的纵剖面凹状的空间成为能够暂时积存使用完的清洗液的空间。在底板202上例如连接有排水软管等排水管,排水管可以与未图示的排水容器连通。The
飞散防止罩5具有:开口50,其能够供旋转工作台30通过;环状的围绕板51,其如图4所示那样形成为从开口50起剖面呈逐渐扩展状倾斜;侧板52,其包围围绕板51并在旋转工作台30的升降方向(Z轴方向)上延伸;以及上板53,其将侧板52和围绕板51的下端连接。在图1中,示出为了对被清洗物W进行清洗而使侧板52上升并且其上端面与上部罩22的下表面接触的状态。The
侧板52是比壳体20小且与壳体20相似的俯视多边形状的筒体,在从+Z方向观察的情况下,侧板52位于壳体20的内侧。如图2所示那样在相对于旋转工作台30装卸被清洗物W时,侧板52下降至壳体20内而成为打开状态,如图1所示那样在对被清洗物W进行清洗、干燥时,侧板52从壳体20内上升而成为关闭状态,防止混合液等的飞散。侧板52、上部罩22例如为了由作业者确认清洗中的被清洗物W的状态而可以由亚克力板等透明部件构成。The
可以在侧板52的上端面上例如配设有未图示的橡胶等密封部件,当侧板52上升而成为关闭状态时,上部罩22的周缘部的底面与密封部件接触而将侧板52与上部罩22之间密闭。For example, a sealing member such as rubber (not shown) may be disposed on the upper end surface of the
飞散防止罩5的开口50根据旋转工作台30的圆形的外形而形成为圆形。如图4所示,围绕板51形成为剖面呈逐渐展开状从开口50起倾斜,俯视呈环状。在图1所示的例子中,围绕板51的面积设定得比上板53的面积小,但并不限于此。另外,围绕板51的倾斜角度等鉴于从清洗喷嘴60喷射的混合液的喷出量等而设定为适当的值。如图1、图4所示,上板53将侧板52和围绕板51的下端连结,从而通过围绕板51和上板53形成飞散防止罩5的底部分。The
配设于容器部2内且对被清洗物W进行保持的旋转工作台30例如其外形为圆形状,该旋转工作台30具有:吸附部300,其由多孔部件等构成,对被清洗物W进行吸附;以及框体301,其对吸附部300进行支承。吸附部300与未图示的吸引源连通,在作为吸附部300的露出面的与框体301的上端面为同一平面的平坦的保持面300a上对被清洗物W进行吸引保持。The rotary table 30 which is arranged in the
旋转单元32具有:旋转轴320,其上端与旋转工作台30的底面侧连结;以及电动机321,其与旋转轴320的下端侧连接,产生旋转驱动力;等等。使旋转工作台30旋转的旋转轴320的轴向为Z轴方向(铅垂方向)。The
例如如图4所示,旋转轴320具有从其外周面沿水平方向延伸进而朝向-Z方向垂下的裙部305,通过裙部305而使从旋转工作台30上流下的混合液不进入旋转轴320与内周板201之间。For example, as shown in FIG. 4 , the
使飞散防止罩5在使旋转工作台30旋转的旋转轴320的轴向(Z轴方向)上升降的升降单元16是气缸、电动气缸或滚珠丝杠机构等,例如升降单元16与该侧板52的下端侧或围绕板51的下表面连接,在图1中简化而示出。The elevating
图1所示的水平移动单元40例如具有:旋转轴部400,其借助未图示的轴承或密封材料等而贯通飞散防止罩5的上板53,在上板53上竖立设置;臂部401,其从旋转轴部400的上端侧沿水平方向延伸;以及旋转电动机402,其轴与旋转轴部400的下端侧连结。并且,在臂部401的前端固定有清洗喷嘴60。The
由此,当旋转电动机402使旋转轴部400绕Z轴方向的轴心旋转时,与此相伴,臂部401和清洗喷嘴60在水平方向上水平移动(旋转移动)。因此,清洗喷嘴60的移动轨迹成为俯视圆弧状,清洗喷嘴60能够使形成于其下端部分的喷射口600从退避位置定位于旋转工作台30的保持面300a上方。例如优选旋转工作台30的旋转中心位于清洗喷嘴60的移动轨迹下。Accordingly, when the
清洗喷嘴60经由接头690和具有挠性的树脂管等水流路691而与水源69连接,该水源69由泵等构成,提供作为清洗水的例如纯水。在水流路691上配设有水路开闭阀692。另外,清洗喷嘴60经由接头680和具有挠性的树脂管等空气流路681而与空气源68连通,该空气源68由压缩机等构成,提供压缩空气。在空气流路681上配设有空气流路开闭阀682。从水源69提供的清洗水和从空气源68提供的空气在清洗喷嘴60内混合而成为混合液,从喷射口600向下方喷射。The cleaning
图1所示的旋转清洗装置1具有飞散防止部7(以下称为第1实施方式的飞散防止部7),在将开口50定位于比旋转工作台30所保持的被清洗物W的上表面Wb靠上的位置、从清洗喷嘴60喷射水与空气的混合液而对被清洗物W进行清洗、然后从清洗喷嘴60喷出空气而使被清洗物W干燥的一系列的清洗干燥动作中,当在清洗后从清洗喷嘴60喷射空气而使被清洗物W的外周缘Wd干燥时,为了使积存于飞散防止罩5的上板53的上表面上的水不会飞溅,该飞散防止部7使从清洗喷嘴60喷射的空气的势力不作用于上板53的上表面上所积存的水。The rotary cleaning device 1 shown in FIG. 1 includes a scattering preventing portion 7 (hereinafter referred to as the scattering preventing portion 7 of the first embodiment), and the
在图1所示的例子中,飞散防止部7具有:斜面板70,其沿着清洗喷嘴60的圆弧状的移动轨迹而从飞散防止罩5的开口50朝向上板53的外周缘在上板53上延伸,该斜面板70的开口50侧高而上板53的外周缘侧低;以及排水口71,其形成于上板53的外周缘,使水从斜面板70的下端侧的缘落下。In the example shown in FIG. 1 , the scattering prevention part 7 has a sloped
斜面板70例如具有大致矩形状的外形,以其上端侧架设在围绕板51的上端侧的状态利用未图示的螺栓等进行固定。斜面板70的下端侧例如被斜着切割,在图1所示的例子中,斜面板70的下端的一侧到达上板53的外周缘。斜面板70的下端侧通过未图示的螺栓等而固定于上板53的上表面上。The
排水口71例如是按照上板53的外周缘的一部分成为其一条边的方式将飞散防止罩5的上板53切割成三角形状而形成的,与斜面板70的下端连接。并且,排水口71与壳体20的纵剖面凹状的空间连通,该空间能够积存使用完的混合液。The
另外,斜面板70和排水口71的外形并不限于图示的例子,例如斜面板70也可以是沿着清洗喷嘴60的圆弧状的移动轨迹而从飞散防止罩5的开口50朝向上板53的外周缘呈圆弧状在上板上延伸。In addition, the outer shape of the
另外,飞散防止部7在图1所示的例子中在上板53上仅配设有一个,例如也可以在清洗喷嘴60的圆弧状的移动轨迹下,在夹着旋转工作台30的中心而与飞散防止部7的配置位置对称的位置配设另一个与飞散防止部7同样的飞散防止部。Further, in the example shown in FIG. 1 , only one scattering preventing portion 7 is provided on the
本发明的旋转清洗装置1也可以代替图1所示的飞散防止部7而具有图3所示的飞散防止部7A(以下称为第2实施方式的飞散防止部7A)。飞散防止部7A是沿着清洗喷嘴60的移动轨迹而配设于飞散防止罩5的上板53上的多孔质部件。作为多孔质部件,例如可以使用多孔陶瓷、多孔金属、多孔碳、或者将金属网或树脂网卷起、折叠成多层而得到的物体等。飞散防止部7A例如具有大致三棱柱状的外形,沿着清洗喷嘴60的移动轨迹从飞散防止罩5的开口50朝向上板53的外周缘而以跨越围绕板51和上板53的上表面的方式延伸,利用粘接剂等固定于上板53的上表面上。The rotary cleaning device 1 of the present invention may include a
在图3所示的例子中,飞散防止部7A的与清洗喷嘴60对置的上表面成为朝向上板53的外周缘而变低的倾斜面,但并不限于此,也可以是朝向外周缘而成为平坦的面。另外,飞散防止部7A的外形也并不限于大致三棱柱状。另外,飞散防止部7A在图3所示的例子中在上板53上仅配设有一个,但例如也可以在清洗喷嘴60的圆弧状的移动轨迹下,在夹着旋转工作台30的中心而与飞散防止部7A的配置位置对称的位置配置另一个与飞散防止部7A同样的飞散防止部。In the example shown in FIG. 3 , the upper surface of the
例如如图5所示,在上板53上的作为飞散防止部7A的下方的位置贯通形成有排水口75,排水口75与壳体20的纵剖面凹状的空间连通,该空间能够积存使用完的混合液。另外,排水口75的配设位置并不限于本实施方式所示的例子。For example, as shown in FIG. 5 , a
以下,对在利用空气与清洗水的混合液(二流体)对被清洗物W的上表面Wb进行清洗之后使用旋转清洗装置1从清洗喷嘴60喷出空气而使被清洗物W干燥的情况下的旋转清洗装置1的动作进行说明。Hereinafter, the case where the upper surface Wb of the object to be cleaned W is cleaned with a mixed liquid (two fluids) of air and cleaning water is used to dry the object to be cleaned W by blowing air from the cleaning
首先,如图2所示,旋转清洗装置1的升降单元16进行动作,使飞散防止罩5下降而成为侧板52打开的状态。即,旋转清洗装置1将上部罩22与壳体20的Z轴方向之间开放,成为被清洗物W能够进入到内部的状态。First, as shown in FIG. 2 , the elevating
将被清洗物W搬送到旋转工作台30上,按照上表面Wb成为上侧的方式将被清洗物W载置于保持面300a上。然后,通过与旋转工作台30连接的未图示的吸引源产生的吸引力传递至保持面300a,从而旋转工作台30在保持面300a上对被清洗物W进行吸引保持。The to-be-cleaned object W is conveyed to the rotary table 30, and the to-be-cleaned object W is mounted on the holding
接着,如图1所示,升降单元16进行动作而使飞散防止罩5从壳体20内上升,侧板52的上端面与上部罩22的周缘部下表面抵接而停止。上部罩22与壳体20之间通过侧板52封住,从而通过上部罩22和飞散防止罩5形成用于对被清洗物W进行清洗和干燥的封闭的空间。另外,飞散防止罩5的开口50定位于比旋转工作台30所保持的被清洗物W的上表面Wb靠上的位置。即,将被清洗物W的上表面Wb定位于比围绕板51的上端面靠下方的位置。Next, as shown in FIG. 1 , the elevating
接着,通过水平移动单元40使清洗喷嘴60旋转移动,将清洗喷嘴60的喷射口600定位于通过旋转工作台30使中心一致且进行吸引保持的被清洗物W的上表面Wb的中心上方。在该状态下,从水源69向清洗喷嘴60提供清洗水且从空气源68向清洗喷嘴60提供压缩空气,从清洗喷嘴60的喷射口600朝向被清洗物W的上表面Wb的中心喷射空气与清洗水的混合液(二流体)。另外,喷射混合液的清洗喷嘴60在被清洗物W的上方按照绕着Z轴方向的轴心以规定角度往复的方式进行旋转移动。另外,通过旋转单元32使旋转工作台30按照规定的旋转速度进行旋转,从而从清洗喷嘴60对被清洗物W的整个上表面Wb喷射混合液。Next, the cleaning
另外,清洗喷嘴60也可以不旋转移动而沿水平方向直线移动。In addition, the cleaning
另外,清洗喷嘴60也可以不定位于被清洗物W的中心上方。即,不对被清洗物W的中心和中心部分进行清洗而仅对外周缘Wd部分进行清洗。In addition, the cleaning
由此,附着于被清洗物W的上表面Wb的磨削屑等附着物通过混合液被清洗去除。然后,被赋予了通过旋转工作台30的旋转而产生的离心力的混合液在被清洗物W的上表面Wb上从中心侧朝向外周侧流动,从上表面Wb上流入到通过壳体20的外周板200、内周板201(参照图4)以及底板202(参照图1)围绕的纵剖面凹状的空间,并积存于该空间。Thereby, the adhering matter such as grinding dust adhering to the upper surface Wb of the object to be cleaned W is washed and removed by the mixed solution. Then, the mixed solution to which the centrifugal force generated by the rotation of the rotary table 30 is applied flows on the upper surface Wb of the object to be cleaned W from the center side toward the outer peripheral side, and flows from the upper surface Wb to the outer periphery of the
另外,对从清洗喷嘴60喷射到被清洗物W的混合液赋予旋转工作台30旋转所带来的离心力,从旋转工作台30或被清洗物W呈放射状飞散的混合液与图4所示的飞散防止罩5的围绕板51的下表面侧碰撞,沿着该下表面而向下方流动,流入到通过壳体20的外周板200、内周板201以及底板202(参照图1)围绕的纵剖面凹状的空间。In addition, centrifugal force caused by the rotation of the rotary table 30 is applied to the mixed liquid sprayed from the cleaning
在对被清洗物W的整个上表面Wb进行规定时间的清洗之后,积极地利用混合液对作为贴合晶片的被清洗物W的外周缘Wd进行清洗。这是因为,大多情况下磨削屑等附着物堆积在贴合晶片的外周缘Wd。通过水平移动单元40使清洗喷嘴60旋转移动,将清洗喷嘴60的喷射口600定位于旋转工作台30所吸引保持的被清洗物W的外周缘Wd的上方,停止清洗喷嘴60的移动。After the entire upper surface Wb of the object to be cleaned W is cleaned for a predetermined time, the outer periphery Wd of the object to be cleaned W, which is a bonded wafer, is actively cleaned with the mixed liquid. This is because adhering matter such as grinding debris is often deposited on the outer peripheral edge Wd of the bonded wafer. The cleaning
在该状态下,从清洗喷嘴60的喷射口600喷射空气与清洗水的混合液。然后,使旋转工作台30按照规定的旋转速度进行旋转,从而对被清洗物W的整个外周缘Wd喷射混合液。在外周缘清洗中,混合液的大部分也通过飞散防止罩5的围绕板51而流入到壳体20的纵剖面凹状的空间,但从清洗喷嘴60喷射的混合液的一部分会流入到上板53的上表面上,或被赋予离心力而从旋转工作台30或被清洗物W呈放射状飞散的混合液飞到上板53的上表面上。因此,水积存于上板53的上表面上,有时形成图4或图5所示的水洼V。In this state, a mixed liquid of air and washing water is jetted from the jetting
接着,在旋转清洗装置1中,进行被清洗物W的干燥。在被清洗物W的干燥中,例如首先进行上表面Wb的干燥。通过水平移动单元40使清洗喷嘴60旋转移动,将清洗喷嘴60的喷射口600定位于旋转工作台30所吸引保持的被清洗物W的中心部的上方,停止清洗喷嘴60的移动。另外,也可以使清洗喷嘴60按照在被清洗物W的上方沿水平方向往复的方式进行旋转移动。从空气源68向清洗喷嘴60提供压缩空气,从清洗喷嘴60的喷射口600朝向被清洗物W的上表面Wb的中心部喷射空气。另外,使旋转工作台30按照规定的旋转速度进行旋转,从而通过在被清洗物W的上表面Wb上从中心沿径向流动的空气以及通过旋转工作台30的旋转所赋予的离心力而使残留在被清洗物W的上表面Wb的清洗水从上表面Wb上流入到通过壳体20的外周板200、内周板201(参照图4、图5)以及底板202围绕的纵剖面凹状的空间。Next, in the rotary cleaning apparatus 1, drying of the to-be-cleaned object W is performed. In the drying of the object to be cleaned W, for example, the upper surface Wb is first dried. The cleaning
在按照规定的时间使被清洗物W的整个上表面Wb干燥之后,积极地利用空气使作为贴合晶片的被清洗物W的外周缘Wd干燥。这是因为,大多情况下清洗水积存于贴合晶片的外周缘Wd。After drying the entire upper surface Wb of the object to be cleaned W for a predetermined time, the outer peripheral edge Wd of the object to be cleaned W serving as the bonded wafer is actively dried with air. This is because the cleaning water is often accumulated on the outer peripheral edge Wd of the bonded wafer.
如图4或图5所示,通过水平移动单元40使清洗喷嘴60旋转移动,将清洗喷嘴60的喷射口600定位于飞散防止部7所在的侧且定位于旋转工作台30所吸引保持的被清洗物W的外周缘Wd的上方,停止清洗喷嘴60的移动。然后,从清洗喷嘴60的喷射口600喷射空气。另外,使旋转工作台30按照规定的旋转速度进行旋转,从而对被清洗物W的整个外周缘Wd喷射空气。As shown in FIG. 4 or FIG. 5 , the cleaning
这里,使用图6、图7对积极地利用空气使被清洗物W的外周缘Wd干燥的情况下的以往的旋转清洗装置1B中的问题点进行简洁地说明。图6、图7所示的旋转清洗装置1B与本发明的旋转清洗装置1不同,构成为不具有图4所示的第1实施方式的飞散防止部7、或图5所示的第2实施方式的飞散防止部7A。Here, the problems in the conventional
与之前说明的使用本发明的旋转清洗装置1而利用混合液对被清洗物W的外周缘Wd进行积极的清洗的情况同样地,使用图6所示的以往的旋转清洗装置1B而利用混合液对被清洗物W的外周缘Wd进行积极的清洗时,从清洗喷嘴60喷射的混合液的一部分流入到上板53的上表面上,或被赋予离心力而从旋转工作台30或被清洗物W呈放射状飞散的混合液飞到上板53的上表面上。因此,水积存于上板53的上表面上,有时形成图6所示的水洼V。Similar to the case where the outer peripheral edge Wd of the object W to be cleaned W is actively cleaned with the mixed liquid using the spin cleaning apparatus 1 of the present invention described above, the conventional
另外,与使用之前说明的本发明的旋转清洗装置1对清洗后的被清洗物W的外周缘Wd进行积极的空气干燥的情况同样地,当使用图7所示的以往的旋转清洗装置1B对被清洗物W的外周缘Wd进行积极的空气干燥时,存在如下的问题:如图7所示,从清洗喷嘴60的喷射口600喷射的空气使飞散防止罩5的上板53的上表面的水洼V的水飞溅,该飞溅的水成为飞沫而卷起,进而落入到干燥的被清洗物W的上表面Wb上,使上表面Wb再次沾湿。In addition, similarly to the case where the outer peripheral edge Wd of the cleaned object W is positively air-dried using the rotary cleaning device 1 of the present invention described above, when the conventional
另一方面,在图4所示的本发明的旋转清洗装置1中,具有使从清洗喷嘴60喷射的空气的势力不作用于上板53的上表面上所积存的水的飞散防止部7,飞散防止部7具有:斜面板70,其沿着清洗喷嘴60的移动轨迹而从飞散防止罩5的开口50朝向上板53的外周缘在上板53上延伸,该斜面板70的开口50侧高而上板53的外周缘侧低;以及排水口71,其形成于上板53的外周缘,使水从斜面板70的下端侧的缘落下,从而在使被清洗物W的外周缘Wd干燥时,使从清喷嘴60喷射的空气的势力沿着斜面板70的斜面(上表面)流动而不作用于上板53的上表面的水洼V,从而能够使积存于上板53的上表面的水不因空气而飞溅。因此,能够防止因空气而飞溅的水滴再次附着于干燥的被清洗物W上。另外,斜面板70的上表面是斜面,因此在进行基于混合液的被清洗物W的清洗时附着于斜面板70的上表面的水滴等向下方流动而从排水口71排出,因此在被清洗物W的外周缘Wd的空气干燥时,水滴不会残留在斜面板70的斜面上,不会使水因空气而飞溅。On the other hand, in the rotary cleaning device 1 of the present invention shown in FIG. 4 , there is provided the scattering preventing portion 7 for preventing the force of the air jetted from the cleaning
另外,在图5所示的本发明的旋转清洗装置1中,具有使从清洗喷嘴60喷射的空气的势力不作用于上板53的上表面上所积存的水的飞散防止部7A,飞散防止部7A是沿着清洗喷嘴60的移动轨迹而配设于飞散防止罩5的上板53上的多孔质部件,从而在使被清洗物W的外周缘Wd干燥时,从清洗喷嘴60喷射的空气的势力通过作为多孔质部件的飞散防止部7A而减弱,空气不会强力地作用于上板53的上表面的水洼V,从而能够使积存于上板53的上表面的水不因空气而飞溅。因此,能够防止因空气而飞溅的水滴再次附着于干燥的被清洗物W上。In addition, in the rotary cleaning device 1 of the present invention shown in FIG. 5 , there is provided a
本发明的旋转清洗装置1并不限于具有上述第1实施方式的飞散防止部7或第2实施方式的飞散防止部7A的例子,当然可以在其技术思想的范围内利用各种不同的方式实施。另外,附图所示的旋转清洗装置1的各结构的形状等也不限于此,可以在能够发挥本发明的效果的范围内适当变更。The spin cleaning device 1 of the present invention is not limited to the example having the scattering preventing portion 7 of the first embodiment or the
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CN114005773A (en) * | 2021-12-03 | 2022-02-01 | 上海思恩装备科技股份有限公司 | A cleaning and drying device for ultra-small size single wafer |
CN114551303A (en) * | 2022-02-24 | 2022-05-27 | 江苏京创先进电子科技有限公司 | Wafer cleaning device, wafer cleaning method and Taizhou ring cutting equipment |
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TW202030027A (en) | 2020-08-16 |
DE102020201805A1 (en) | 2020-08-13 |
KR102672382B1 (en) | 2024-06-04 |
JP7185552B2 (en) | 2022-12-07 |
TWI816020B (en) | 2023-09-21 |
JP2020136300A (en) | 2020-08-31 |
KR20200099097A (en) | 2020-08-21 |
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