CN111474460B - IGBT grid resistance fault detection system - Google Patents
IGBT grid resistance fault detection system Download PDFInfo
- Publication number
- CN111474460B CN111474460B CN202010478597.6A CN202010478597A CN111474460B CN 111474460 B CN111474460 B CN 111474460B CN 202010478597 A CN202010478597 A CN 202010478597A CN 111474460 B CN111474460 B CN 111474460B
- Authority
- CN
- China
- Prior art keywords
- resistor
- triode
- igbt
- capacitor
- detection circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 78
- 239000003990 capacitor Substances 0.000 claims description 65
- 230000003321 amplification Effects 0.000 claims description 4
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Conversion In General (AREA)
Abstract
The invention provides an IGBT grid resistance fault detection system, which comprises a first detection circuit, a second detection circuit and an AND gate circuit, wherein the first detection circuit is connected with the second detection circuit; the first detection circuit is used for detecting a voltage signal reflecting the change of the IGBT grid resistance and outputting a fault detection signal when the resistance value of the IGBT grid resistance is increased; the second detection circuit is used for detecting a voltage signal reflecting the change of the grid resistance of the IGBT and outputting a fault detection signal when the detected voltage signal is higher than a set upper limit threshold or lower than a set lower limit threshold; the gate fault detection circuit comprises an AND gate circuit, a first detection circuit, a second detection circuit and a drive chip of the IGBT, wherein the AND gate circuit is used for receiving fault signals output by the first detection circuit and the second detection circuit and outputting fault determination signals to the drive chip of the IGBT when the first detection circuit and the second detection circuit simultaneously output the fault signals.
Description
Technical Field
The invention relates to a fault detection system, in particular to an IGBT grid resistance fault detection system.
Background
The IGBT is used as a novel semiconductor power device, is widely applied to the fields of industry, rail transit, wind power generation, new energy automobiles and the like, and plays a vital role in the aspect of motor driving. The frequency converter utilizes IGBT to form a motor control device, can carry out soft start and speed regulation on the motor, and is beneficial to improving the production efficiency.
The IGBT is a key factor for reliability in an electronic power system, and the IGBT usually works under high voltage and large current, so a gate resistor is connected in series to the gate of the IGBT, and the role of the gate resistor is mainly expressed in three aspects: (1) a capacitive structure is formed between the grid electrode and the emitter electrode of the IGBT, parasitic inductance exists in a grid electrode loop, and if no grid electrode resistance exists, the grid electrode loop generates strong oscillation under the excitation of a drive pulse of a driver, so that the IGBT cannot work normally; (2) the driving current is limited, the power loss of the driver is transferred, the capacitance and the inductance are all reactive elements, if no grid resistance exists, most of the driving power is consumed on an output tube in the driver, and the temperature of the output tube is increased quickly; (3) the on-off speed of the power switch device is adjusted, the grid resistance is small, the on-off of the IGBT is fast, and the switching loss is small; otherwise, the speed is low, the switching loss value is increased, and the voltage and current change rate of the switching device is greatly improved due to the excessively high driving speed, so that larger interference is generated, and the whole device can not work seriously. Therefore, whether the gate resistance of the IGBT is normal or not is related to whether the IGBT and the driving circuit of the IGBT and the entire electronic system applied to the IGBT can reliably operate or not. In the use process of the grid resistance of the IGBT, if the grid resistance is damaged or is not lightened, the actual grid resistance of the IGBT is increased, so that the conduction time of the IBGT is prolonged, and when the IGBT is applied to an inverter bridge, the conduction time of two IBGT of the same bridge arm is overlapped, so that a short circuit is formed, and the whole system is damaged.
In the prior art, the fault detection of the gate resistance of the IGBT mainly adopts the following three modes:
the first is to judge by collecting the voltage between the collector and emitter of the IGBT itself, the second is to judge by detecting the current in a manner like a hall sensor, and the third is to judge by using the voltage and current between the collector and emitter of the multi-stage IGBT, however, the existing methods have the following defects:
first, it cannot be determined whether the IBGT itself or the gate resistance is faulty, but only whether the IBGT and its drive are faulty, but whether the gate resistance of the IBGT is faulty or not;
secondly, a Hall sensor is adopted, due to the frequency bandwidth of the sensor, the sampling delay of a controller and the like, the real-time performance is poor, and the grid fault of the IGBT cannot be found in time;
thirdly, a plurality of logic devices such as CPLDs or FPGAs are required to be configured for judgment, so that the whole structure is loaded, the cost is high, and accurate debugging is difficult.
Therefore, in order to solve the above technical problem, it is necessary to provide a new IGBT gate resistance failure detection apparatus or method.
Disclosure of Invention
In view of this, the present invention provides a system for detecting a gate resistance fault of an IGBT, which can accurately detect a gate fault of an IGBT in real time, so as to ensure the stability of the operation of the IGBT and further ensure the reliability and safety of a power electronic system using the IGBT.
The invention provides an IGBT grid resistance fault detection system, which comprises a first detection circuit, a second detection circuit and an AND gate circuit, wherein the first detection circuit is connected with the second detection circuit;
the first detection circuit is used for detecting a voltage signal reflecting the change of the IGBT grid resistance and outputting a fault detection signal when the resistance value of the IGBT grid resistance is increased;
the second detection circuit is used for detecting a voltage signal reflecting the change of the grid resistance of the IGBT and outputting a fault detection signal when the detected voltage signal is higher than a set upper limit threshold or lower than a set lower limit threshold;
and the AND gate circuit is used for receiving the fault signals output by the first detection circuit and the second detection circuit and outputting a fault determination signal to the drive chip of the IGBT when the first detection circuit and the second detection circuit simultaneously output the fault signals.
Further, the first detection circuit comprises a resistor R10, a resistor R11, a resistor R12, a resistor R13, a resistor R14, a resistor R15, a resistor R16, a resistor R17, a resistor R18, a resistor R19, a resistor R20, a diode D1, a diode D2, a diode D3, a diode D4, a triode Q1, a triode Q2, a triode Q3, a triode Q4, a triode Q5, a capacitor C6 and a capacitor C7;
one end of a diode D1 is connected with a common connection point between an IGBT gate resistor and an output pin of a driving chip of the IGBT, the cathode of a diode D1 is connected with the base of a triode Q1 through a resistor R10, the emitter of the triode Q1 is connected with the common connection point between the IGBT gate resistor and the gate of the IGBT, the base of a triode Q1 is connected with the emitter of a triode Q1 through a resistor R11, the collector of the triode Q1 is connected with one end of the resistor R13 through a resistor R12, the other end of the resistor R13 is connected with a +15V power supply, one end of a capacitor C1 is connected with a +15V power supply, the other end of a capacitor C1 is connected with the base of the triode Q2, the base of the triode Q2 is connected with the common connection point between the resistor R12 and the resistor R13, the emitter of the triode Q2 is connected with a +15V power supply, the collector of a triode Q2 is connected with the anode of a diode D3, the cathode of a diode D3 is connected with a-10V power supply after being connected in series through a resistor R15 and a resistor R17, a common connection point between the resistor R15 and the resistor R17 is connected with a base electrode of a triode Q3 through a resistor R15, an emitting electrode of the triode Q3 is connected with a-10V power supply, a common connection point between the resistor R15 and the resistor R17 is connected with the-10V power supply through a capacitor C7, a collector electrode of the triode Q3 is connected with a +15V power supply through a resistor R14, a collector electrode of the triode Q3 is connected with a base electrode of a triode Q5, an emitting electrode of the triode Q5 is connected with the-10V power supply, a collector electrode of the triode Q5 is connected with the +15V power supply through a resistor R20, and a collector electrode of the triode Q5 serves as an output end of the first detection circuit;
an emitter of the triode Q4 is connected to a common connection point between a gate resistor of the IGBT and the gate of the IGBT, an emitter of the triode Q4 is connected with a base of the triode Q4 through a resistor R18, a base of the triode Q4 is connected with an anode of the diode D2 through a resistor R19, a cathode of the diode D2 is connected to a common connection point between the gate resistor of the IGBT and an output pin of a driving chip of the IGBT, a collector of the triode Q4 is connected with an anode of the diode D4, and a cathode of the diode D4 is connected to a common connection point between a cathode of the diode D3 and the resistor R15.
Further, the second detection circuit comprises an input amplification circuit, a delay comparison circuit and an inverted output circuit;
the output end of the input amplifying circuit is connected with the input end of the delay comparison circuit, the output end of the delay comparison circuit is connected with the input end of the inverting output circuit, and the output end of the inverting output circuit is used as the detection output end of the second detection circuit.
Further, the input amplifying circuit comprises a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R6 and an operational amplifier U1;
one end of the capacitor C1 is used as a first input end of the input amplifying circuit, the other end of the capacitor C1 is connected with the inverting end of the operational amplifier U1 through a resistor R2, and the inverting end of the operational amplifier U1 is connected with the output end of the operational amplifier U1 after being connected in parallel through a resistor R4 and a capacitor C3;
one end of a capacitor C2 is used as a second input end of the input amplifying circuit, the other end of a capacitor C2 is connected to the in-phase end of an operational amplifier U1 through a resistor R3, the in-phase end of the operational amplifier U1 is connected in parallel with a capacitor C4 through a resistor R5 and then connected with a-10V power supply, one end of a resistor R1 is connected to a common connection point between the capacitor C1 and a resistor R2, and the other end of the resistor R1 is connected to a common connection point between the capacitor C2 and the resistor R3;
the output end of the operational amplifier U1 is connected with one end of a resistor R6, and the other end of the resistor R6 is used as the output end of the input amplifying circuit;
and the first input end and the second input end of the input amplifying circuit are respectively connected to two ends of the IGBT grid resistor.
Further, the delay comparison circuit comprises a comparator U2, a comparator U3, a resistor R7, a resistor R8, a resistor R9 and a capacitor C5;
one end of the resistor R7 is connected with a +15V power supply, the other end of the resistor R7 is connected with one end of the resistor R9 through a resistor R8, and the other end of the resistor R9 is connected with a-10V power supply;
the in-phase end of the comparator U2 is connected to the output end of the input amplifying circuit, and the inverting end of the comparator U2 is connected to the common connection point between the resistor R7 and the resistor R8;
the inverting end of the comparator U3 is connected to the output end of the input amplifying circuit, and the non-inverting end of the comparator U2 is connected to the common connection point between the resistor R8 and the resistor R9; the output ends of the comparator U2 and the comparator U3 are used as the output ends of the delay comparison circuit;
the inverting terminal of the comparator U2 is connected to the non-inverting terminal of the comparator U3 through a capacitor C5.
The invention has the beneficial effects that: the invention can accurately detect the grid fault of the IGBT in real time, thereby ensuring the working stability of the IGBT and further ensuring the reliability and safety of a power electronic system applying the IGBT.
Drawings
The invention is further described below with reference to the following figures and examples:
FIG. 1 is a schematic structural diagram of the present invention.
Fig. 2 is a schematic diagram of a first detection circuit of the present invention.
FIG. 3 is a schematic diagram of a second detection circuit of the present invention.
Fig. 4 is a schematic diagram of IGBT gate resistance connection according to the present invention.
Detailed Description
The invention is described in further detail below with reference to the drawings of the specification:
the invention provides an IGBT grid resistance fault detection system, which comprises a first detection circuit, a second detection circuit and an AND gate circuit, wherein the first detection circuit is connected with the second detection circuit;
the first detection circuit is used for detecting a voltage signal reflecting the change of the IGBT grid resistance and outputting a fault detection signal when the resistance value of the IGBT grid resistance is increased;
the second detection circuit is used for detecting a voltage signal reflecting the change of the grid resistance of the IGBT and outputting a fault detection signal when the detected voltage signal is higher than a set upper limit threshold or lower than a set lower limit threshold;
the invention can accurately detect the grid fault of the IGBT in real time, thereby ensuring the working stability of the IGBT and further ensuring the reliability and safety of a power electronic system applying the IGBT.
In this embodiment, the first detection circuit includes a resistor R10, a resistor R11, a resistor R12, a resistor R13, a resistor R14, a resistor R15, a resistor R16, a resistor R17, a resistor R18, a resistor R19, a resistor R20, a diode D1, a diode D2, a diode D3, a diode D4, a transistor Q1, a transistor Q2, a transistor Q3, a transistor Q4, a transistor Q5, a capacitor C6, and a capacitor C7;
one end of a diode D1 is connected with a common connection point between an IGBT gate resistor and an output pin of a driving chip of the IGBT, the cathode of a diode D1 is connected with the base of a triode Q1 through a resistor R10, the emitter of the triode Q1 is connected with the common connection point between the IGBT gate resistor and the gate of the IGBT, the base of a triode Q1 is connected with the emitter of a triode Q1 through a resistor R11, the collector of the triode Q1 is connected with one end of the resistor R13 through a resistor R12, the other end of the resistor R13 is connected with a +15V power supply, one end of a capacitor C1 is connected with a +15V power supply, the other end of a capacitor C1 is connected with the base of the triode Q2, the base of the triode Q2 is connected with the common connection point between the resistor R12 and the resistor R13, the emitter of the triode Q2 is connected with a +15V power supply, the collector of a triode Q2 is connected with the anode of a diode D3, the cathode of a diode D3 is connected with a-10V power supply after being connected in series through a resistor R15 and a resistor R17, a common connection point between the resistor R15 and the resistor R17 is connected with a base electrode of a triode Q3 through a resistor R15, an emitting electrode of the triode Q3 is connected with a-10V power supply, a common connection point between the resistor R15 and the resistor R17 is connected with the-10V power supply through a capacitor C7, a collector electrode of the triode Q3 is connected with a +15V power supply through a resistor R14, a collector electrode of the triode Q3 is connected with a base electrode of a triode Q5, an emitting electrode of the triode Q5 is connected with the-10V power supply, a collector electrode of the triode Q5 is connected with the +15V power supply through a resistor R20, and a collector electrode of the triode Q5 serves as an output end of the first detection circuit;
an emitter of a transistor Q4 is connected to a common connection point between a gate resistor of an IGBT and a gate of the IGBT, an emitter of a transistor Q4 is connected to a base of a transistor Q4 through a resistor R18, a base of a transistor Q4 is connected to an anode of a diode D2 through a resistor R19, a cathode of a diode D2 is connected to a common connection point between the gate resistor of the IGBT and an output pin of a driving chip of the IGBT, a collector of a transistor Q4 is connected to an anode of a diode D4, and a cathode of a diode D4 is connected to a common connection point between a cathode of a diode D3 and the resistor R15, in which, when a pulse electric driving signal output from a driving circuit (or a driving chip) of the IGBT is positive half cycle, if the gate resistor of the IGBT increases, a voltage difference between an anode of a diode D1 and the emitter of the transistor Q1 increases, and when a turn-on voltage of the transistor Q1 is reached, the transistor Q1 is turned on, the base voltage of the triode Q2 is pulled down, so that the triode Q2 is conducted, the triode Q3 is conducted, and the collector of the triode Q3 outputs low level; when the pulse driving signal is in the negative half cycle, when the falling edge of the pulse signal falls to the negative voltage signal, if the resistance value of the gate resistor increases, the voltage does not change due to the presence of the IGBT gate capacitor at the right end of the gate resistor (referring to fig. 4, for brevity, the end connected to the driving chip is the left end, and the end connected to the IGBT gate resistor and the IGBT gate is the right end), at this time, the voltage difference between the right end and the left end of the IGBT gate resistor increases, so that a reverse bias voltage of the transistor Q4 is formed, the transistor Q4 is turned on, so that the capacitor C7 is charged, and further the transistor Q3 is controlled to be turned on, the collector of the transistor Q3 outputs a low level, and the transistor Q5 is used for inverting the level signal of the transistor Q3, so that when the transistor Q3 outputs a low level, the collector of the transistor Q5 outputs a high level, which is a fault indication.
In this embodiment, the second detection circuit includes an input amplification circuit, a delay comparison circuit, and an inverting output circuit;
the output end of the input amplifying circuit is connected with the input end of the delay comparison circuit, the output end of the delay comparison circuit is connected with the input end of the inverting output circuit, and the output end of the inverting output circuit is used as the detection output end of the second detection circuit.
Specifically, the method comprises the following steps: the input amplifying circuit comprises a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R6 and an operational amplifier U1;
one end of the capacitor C1 is used as a first input end of the input amplifying circuit, the other end of the capacitor C1 is connected with the inverting end of the operational amplifier U1 through a resistor R2, and the inverting end of the operational amplifier U1 is connected with the output end of the operational amplifier U1 after being connected in parallel through a resistor R4 and a capacitor C3;
one end of a capacitor C2 is used as a second input end of the input amplifying circuit, the other end of a capacitor C2 is connected to the in-phase end of an operational amplifier U1 through a resistor R3, the in-phase end of the operational amplifier U1 is connected in parallel with a capacitor C4 through a resistor R5 and then connected with a-10V power supply, one end of a resistor R1 is connected to a common connection point between the capacitor C1 and a resistor R2, and the other end of the resistor R1 is connected to a common connection point between the capacitor C2 and the resistor R3;
the output end of the operational amplifier U1 is connected with one end of a resistor R6, and the other end of the resistor R6 is used as the output end of the input amplifying circuit;
the first input end and the second input end of the input amplifying circuit are respectively connected to two ends of the IGBT grid resistor, that is, any one of the first input end and the second input end of the input amplifying circuit is connected to the left end or the right end of the IGBT grid resistor, so that fault detection of the grid resistor can be realized, wherein the capacitor C1 is used for detecting the resistance state of the grid resistor when the pulse driving signal is in a positive half cycle, and the capacitor C2 is used for detecting the resistance state of the grid resistor when the pulse driving signal is in a negative half cycle.
The delay comparison circuit comprises a comparator U2, a comparator U3, a resistor R7, a resistor R8, a resistor R9 and a capacitor C5;
one end of the resistor R7 is connected with a +15V power supply, the other end of the resistor R7 is connected with one end of the resistor R9 through a resistor R8, and the other end of the resistor R9 is connected with a-10V power supply;
the in-phase end of the comparator U2 is connected to the output end of the input amplifying circuit, and the inverting end of the comparator U2 is connected to the common connection point between the resistor R7 and the resistor R8;
the inverting end of the comparator U3 is connected to the output end of the input amplifying circuit, and the non-inverting end of the comparator U2 is connected to the common connection point between the resistor R8 and the resistor R9; the output ends of the comparator U2 and the comparator U3 are used as the output ends of the delay comparison circuit;
the inverting terminal of the comparator U2 is connected with the inverting terminal of the comparator U3 through a capacitor C5, wherein the capacitor C1, the capacitor C2 and a resistor R1 form an input filter circuit, the input filter circuit is a high-frequency filter circuit, a driving waveform interference spike caused by stray inductance is effectively filtered, as the driving signal is a pulse signal, when the driving signal is in a positive half cycle of the pulse driving signal, the positive half cycle pulse signal is filtered through the capacitor C1 and the resistor R1, then the filtered positive half cycle pulse signal is input into the operational amplifier U1 for amplification, then the amplified positive half cycle pulse signal is input into the comparator U2 for comparison, the voltage is compared with a set upper limit threshold, and when the voltage is greater than the upper limit threshold, the comparator outputs a high-level fault signal to represent that the current IGBT gate resistance is in a fault state; when the negative half cycle of the pulse signal is detected, filtering is carried out through a capacitor C2 and a resistor R1, the filtered signal is input to an inverting terminal of an operational amplifier U1 to be amplified, and then the amplified signal is output to a comparator U3 to be compared, when the voltage value of the negative half cycle of the pulse signal is lower than a lower limit threshold value, the comparator U3 outputs a high-level fault signal to represent that the current IGBT grid resistance is in a fault state, and when the first detection circuit and the second detection circuit both have the high-level fault signal, the AND gate circuit outputs a fault confirmation signal to determine that the current IGBT grid resistance is in fault.
Fig. 4 is a schematic diagram of driving an IGBT, IC is an IGBT driving chip, and RG is a gate resistance of the IGBT.
Finally, the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made to the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, and all of them should be covered in the claims of the present invention.
Claims (4)
1. The utility model provides a IGBT grid resistance fault detection system which characterized in that: the circuit comprises a first detection circuit, a second detection circuit and an AND gate circuit;
the first detection circuit is used for detecting a voltage signal reflecting the change of the IGBT grid resistance and outputting a fault detection signal when the resistance value of the IGBT grid resistance is increased;
the second detection circuit is used for detecting a voltage signal reflecting the change of the grid resistance of the IGBT and outputting a fault detection signal when the detected voltage signal is higher than a set upper limit threshold or lower than a set lower limit threshold;
the AND gate circuit is used for receiving fault signals output by the first detection circuit and the second detection circuit and outputting a fault determination signal to a driving chip of the IGBT when the first detection circuit and the second detection circuit simultaneously output the fault signals;
the first detection circuit comprises a resistor R10, a resistor R11, a resistor R12, a resistor R13, a resistor R14, a resistor R15, a resistor R16, a resistor R17, a resistor R18, a resistor R19, a resistor R20, a diode D1, a diode D2, a diode D3, a diode D4, a triode Q1, a triode Q2, a triode Q3, a triode Q4, a triode Q5, a capacitor C6 and a capacitor C7;
one end of a diode D1 is connected with a common connection point between an IGBT gate resistor and an output pin of a driving chip of the IGBT, the cathode of a diode D1 is connected with the base of a triode Q1 through a resistor R10, the emitter of the triode Q1 is connected with the common connection point between the IGBT gate resistor and the gate of the IGBT, the base of a triode Q1 is connected with the emitter of a triode Q1 through a resistor R11, the collector of the triode Q1 is connected with one end of the resistor R13 through a resistor R12, the other end of the resistor R13 is connected with a +15V power supply, one end of a capacitor C1 is connected with a +15V power supply, the other end of a capacitor C1 is connected with the base of the triode Q2, the base of the triode Q2 is connected with the common connection point between the resistor R12 and the resistor R13, the emitter of the triode Q2 is connected with a +15V power supply, the collector of a triode Q2 is connected with the anode of a diode D3, the cathode of a diode D3 is connected with a-10V power supply after being connected in series through a resistor R15 and a resistor R17, a common connection point between the resistor R15 and the resistor R17 is connected with a base electrode of a triode Q3 through a resistor R15, an emitting electrode of the triode Q3 is connected with a-10V power supply, a common connection point between the resistor R15 and the resistor R17 is connected with the-10V power supply through a capacitor C7, a collector electrode of the triode Q3 is connected with a +15V power supply through a resistor R14, a collector electrode of the triode Q3 is connected with a base electrode of a triode Q5, an emitting electrode of the triode Q5 is connected with the-10V power supply, a collector electrode of the triode Q5 is connected with the +15V power supply through a resistor R20, and a collector electrode of the triode Q5 serves as an output end of the first detection circuit;
an emitter of the triode Q4 is connected to a common connection point between a gate resistor of the IGBT and the gate of the IGBT, an emitter of the triode Q4 is connected with a base of the triode Q4 through a resistor R18, a base of the triode Q4 is connected with an anode of the diode D2 through a resistor R19, a cathode of the diode D2 is connected to a common connection point between the gate resistor of the IGBT and an output pin of a driving chip of the IGBT, a collector of the triode Q4 is connected with an anode of the diode D4, and a cathode of the diode D4 is connected to a common connection point between a cathode of the diode D3 and the resistor R15.
2. The IGBT gate resistance fault detection system of claim 1, wherein: the second detection circuit comprises an input amplification circuit and a delay comparison circuit;
the output end of the input amplifying circuit is connected with the input end of the delay comparison circuit, and the output end of the delay comparison circuit is used as the detection output end of the second detection circuit.
3. The IGBT gate resistance fault detection system of claim 2, wherein: the input amplifying circuit comprises a capacitor C1, a capacitor C2, a capacitor C3, a capacitor C4, a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R6 and an operational amplifier U1;
one end of the capacitor C1 is used as a first input end of the input amplifying circuit, the other end of the capacitor C1 is connected with the inverting end of the operational amplifier U1 through a resistor R2, and the inverting end of the operational amplifier U1 is connected with the output end of the operational amplifier U1 after being connected in parallel through a resistor R4 and a capacitor C3;
one end of a capacitor C2 is used as a second input end of the input amplifying circuit, the other end of a capacitor C2 is connected to the in-phase end of an operational amplifier U1 through a resistor R3, the in-phase end of the operational amplifier U1 is connected in parallel with a capacitor C4 through a resistor R5 and then connected with a-10V power supply, one end of a resistor R1 is connected to a common connection point between the capacitor C1 and a resistor R2, and the other end of the resistor R1 is connected to a common connection point between the capacitor C2 and the resistor R3;
the output end of the operational amplifier U1 is connected with one end of a resistor R6, and the other end of the resistor R6 is used as the output end of the input amplifying circuit;
and the first input end and the second input end of the input amplifying circuit are respectively connected to two ends of the IGBT grid resistor.
4. The IGBT gate resistance fault detection system of claim 2, wherein: the delay comparison circuit comprises a comparator U2, a comparator U3, a resistor R7, a resistor R8, a resistor R9 and a capacitor C5;
one end of the resistor R7 is connected with a +15V power supply, the other end of the resistor R7 is connected with one end of the resistor R9 through a resistor R8, and the other end of the resistor R9 is connected with a-10V power supply;
the in-phase end of the comparator U2 is connected to the output end of the input amplifying circuit, and the inverting end of the comparator U2 is connected to the common connection point between the resistor R7 and the resistor R8;
the inverting end of the comparator U3 is connected to the output end of the input amplifying circuit, and the non-inverting end of the comparator U2 is connected to the common connection point between the resistor R8 and the resistor R9; the output ends of the comparator U2 and the comparator U3 are used as the output ends of the delay comparison circuit;
the inverting terminal of the comparator U2 is connected to the non-inverting terminal of the comparator U3 through a capacitor C5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010478597.6A CN111474460B (en) | 2020-05-29 | 2020-05-29 | IGBT grid resistance fault detection system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010478597.6A CN111474460B (en) | 2020-05-29 | 2020-05-29 | IGBT grid resistance fault detection system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111474460A CN111474460A (en) | 2020-07-31 |
| CN111474460B true CN111474460B (en) | 2022-03-22 |
Family
ID=71765521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010478597.6A Active CN111474460B (en) | 2020-05-29 | 2020-05-29 | IGBT grid resistance fault detection system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111474460B (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112067966B (en) * | 2020-09-19 | 2022-07-05 | 哈尔滨理工大学 | Simulation type IGBT failure mechanism analysis system |
| CN112213562A (en) * | 2020-09-23 | 2021-01-12 | 龙腾半导体股份有限公司 | Method for measuring and calculating internal resistance of grid electrode of power semiconductor device |
| CN114024529A (en) * | 2022-01-07 | 2022-02-08 | 南京易科腾信息技术有限公司 | Signal delay circuit, reset device and electronic equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109061431A (en) * | 2018-08-22 | 2018-12-21 | 徐州中矿大传动与自动化有限公司 | A kind of SiC MOSFET grid fault diagnosis system and diagnostic method based on gate charge |
| CN109375087A (en) * | 2018-10-11 | 2019-02-22 | 连云港杰瑞电子有限公司 | A kind of protection circuit and method with high speed detection IGBT short trouble |
| CN210376577U (en) * | 2018-08-22 | 2020-04-21 | 徐州中矿大传动与自动化有限公司 | SiC MOSFET grid fault diagnosis system and analog circuit |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08248094A (en) * | 1995-03-07 | 1996-09-27 | Sharp Corp | Characteristic measuring method for field effect transistor |
| KR100433799B1 (en) * | 1998-12-03 | 2004-06-04 | 가부시키가이샤 히타치세이사쿠쇼 | Gate drive circuit of voltage drive switching element |
| JP4776368B2 (en) * | 2005-12-20 | 2011-09-21 | 矢崎総業株式会社 | On-fault detection device for power supply circuit |
| US9094005B2 (en) * | 2013-07-30 | 2015-07-28 | Denso Corporation | Semiconductor element module and gate drive circuit |
| JP6076223B2 (en) * | 2013-09-05 | 2017-02-08 | 三菱電機株式会社 | Power semiconductor device drive circuit |
| CN203617893U (en) * | 2013-11-29 | 2014-05-28 | 比亚迪股份有限公司 | Intelligent power module (IPM) circuit |
| CN104410394B (en) * | 2014-11-05 | 2017-08-04 | 南京航空航天大学 | The Drive Protecting Circuit of solid-state high-speed switch based on IGBT in a kind of micro-grid system |
| CN110945789B (en) * | 2017-07-28 | 2023-11-03 | 三菱电机株式会社 | Driving circuit of power semiconductor element |
| JP6993949B2 (en) * | 2018-09-13 | 2022-01-14 | 株式会社東芝 | Electronic circuits and methods |
-
2020
- 2020-05-29 CN CN202010478597.6A patent/CN111474460B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109061431A (en) * | 2018-08-22 | 2018-12-21 | 徐州中矿大传动与自动化有限公司 | A kind of SiC MOSFET grid fault diagnosis system and diagnostic method based on gate charge |
| CN210376577U (en) * | 2018-08-22 | 2020-04-21 | 徐州中矿大传动与自动化有限公司 | SiC MOSFET grid fault diagnosis system and analog circuit |
| CN109375087A (en) * | 2018-10-11 | 2019-02-22 | 连云港杰瑞电子有限公司 | A kind of protection circuit and method with high speed detection IGBT short trouble |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111474460A (en) | 2020-07-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111474460B (en) | IGBT grid resistance fault detection system | |
| CN101344572B (en) | Chopped wave test circuit and method for semiconductor power device | |
| CN112285521B (en) | Self-correcting IGBT health monitoring method | |
| CN201975764U (en) | Frequency converter load short circuit protection circuit for centrifugal machine | |
| CN111781482B (en) | Method and device for detecting health state of bonding wire of high-power SIC MOSFET module | |
| CN108322033B (en) | The overcurrent protective device of SiCMOSFET converter and guard method | |
| CN202737730U (en) | IGBT (insulated gate bipolar transistor) driving circuit and three-phase half-bridge inverter driving circuit | |
| CN202059318U (en) | Isolated bridge type high-frequency MOSFET (Metal-Oxide -Semiconductor Field Effect Transistor) drive circuit | |
| CN102931960B (en) | IGBT (insulated gate bipolar translator) protection method and protection circuit | |
| CN104349532A (en) | LED (Light-Emitting Diode) constant-current driver and LED constant-current driving method | |
| CN103795033A (en) | Detecting and protecting circuit and method for inter-phase short circuit of switch reluctance motor | |
| CN201203647Y (en) | AC zero-cross detection circuit and electric force carrier adapter with the same | |
| CN203814013U (en) | LED driving circuit adopting single-end zero crossing detection | |
| CN105242149A (en) | IGCT phase module circuit with inductor voltage state detection | |
| CN113252972A (en) | Bridgeless PFC inductive current zero-crossing detection circuit | |
| CN220234179U (en) | Overcurrent protection circuit | |
| CN113765070B (en) | IGBT short-circuit protection circuit and method based on inductance current change rate | |
| CN203326614U (en) | Low-power-consumption fast-type capacitor switch with intelligent control | |
| CN202189120U (en) | Alternating current switch detection circuit controlled by silicon controlled rectifier | |
| CN102168668A (en) | Circuit system for intelligent water pump | |
| CN203387165U (en) | High-speed half-bridge MOSFET short circuit protection circuit | |
| CN103407527B (en) | The information acquisition circuit of low-voltage electromobile | |
| CN202749802U (en) | Circuit for protecting IGBT in output short-circuit state of frequency converter | |
| CN202978239U (en) | IGBT straight-through overcurrent protection circuit | |
| CN201750333U (en) | Drive circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |