CN111455468B - Additive for single crystal texturing and application thereof - Google Patents
Additive for single crystal texturing and application thereof Download PDFInfo
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- CN111455468B CN111455468B CN202010448015.XA CN202010448015A CN111455468B CN 111455468 B CN111455468 B CN 111455468B CN 202010448015 A CN202010448015 A CN 202010448015A CN 111455468 B CN111455468 B CN 111455468B
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- 239000000654 additive Substances 0.000 title claims abstract description 28
- 230000000996 additive effect Effects 0.000 title claims abstract description 28
- 239000013078 crystal Substances 0.000 title claims abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 10
- 239000002518 antifoaming agent Substances 0.000 claims abstract description 9
- 239000002667 nucleating agent Substances 0.000 claims abstract description 9
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 8
- 230000003750 conditioning effect Effects 0.000 claims abstract description 8
- 239000000243 solution Substances 0.000 claims description 34
- 239000003513 alkali Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 10
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 9
- 239000007864 aqueous solution Substances 0.000 claims description 7
- 239000002253 acid Substances 0.000 claims description 6
- 229920000805 Polyaspartic acid Polymers 0.000 claims description 3
- 108010020346 Polyglutamic Acid Proteins 0.000 claims description 3
- 108010039918 Polylysine Proteins 0.000 claims description 3
- ULUAUXLGCMPNKK-UHFFFAOYSA-N Sulfobutanedioic acid Chemical compound OC(=O)CC(C(O)=O)S(O)(=O)=O ULUAUXLGCMPNKK-UHFFFAOYSA-N 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 229940079881 disodium lauroamphodiacetate Drugs 0.000 claims description 3
- ZPRZNBBBOYYGJI-UHFFFAOYSA-L disodium;2-[1-[2-(carboxylatomethoxy)ethyl]-2-undecyl-4,5-dihydroimidazol-1-ium-1-yl]acetate;hydroxide Chemical compound [OH-].[Na+].[Na+].CCCCCCCCCCCC1=NCC[N+]1(CCOCC([O-])=O)CC([O-])=O ZPRZNBBBOYYGJI-UHFFFAOYSA-L 0.000 claims description 3
- 108010064470 polyaspartate Proteins 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- 229920002643 polyglutamic acid Polymers 0.000 claims description 3
- 229920000656 polylysine Polymers 0.000 claims description 3
- WOMWZQPEGPZTPN-UHFFFAOYSA-N sodium;undec-10-enamide Chemical compound [Na].[Na].NC(=O)CCCCCCCCC=C WOMWZQPEGPZTPN-UHFFFAOYSA-N 0.000 claims description 3
- UWHCKJMYHZGTIT-UHFFFAOYSA-N tetraethylene glycol Chemical compound OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 claims description 3
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 claims description 3
- QXNVGIXVLWOKEQ-UHFFFAOYSA-N Disodium Chemical compound [Na][Na] QXNVGIXVLWOKEQ-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 19
- 239000010408 film Substances 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 238000007747 plating Methods 0.000 description 9
- 238000005530 etching Methods 0.000 description 7
- 238000002360 preparation method Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 229940047642 disodium cocoamphodiacetate Drugs 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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- Y02E10/00—Energy generation through renewable energy sources
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Abstract
The invention discloses an additive for single crystal texturing, which comprises the following components in percentage by mass: 0.5 to 10 percent of nucleating agent, 0.02 to 0.5 percent of suede conditioning agent, 0.1 to 0.5 percent of defoaming agent and the balance of water. The additive is added into the alkaline texturing solution of the monocrystalline silicon wafer, so that a texturing sheet with a round and smooth textured surface can be directly obtained through texturing, the formed pyramid structure is not sharp any more, and the top of the pyramid structure is provided with a certain round and smooth surface.
Description
Technical Field
The invention relates to the field of photovoltaics, in particular to an additive for single crystal texture making and application thereof.
Background
The HIT battery has been attracting much attention since its invention by the japan ocean corporation in 1990. The HIT cell has long kept a worldwide record of the efficiency of crystalline silicon solar cells by integrating the advantages of crystalline silicon solar cells and thin film cells.
The HIT cell needs to be plated with an amorphous silicon film on the monocrystalline silicon surface after texturing is finished, and the uniformity and the film quality of the amorphous silicon film are key factors influencing the efficiency of the HIT cell. However, the thickness of the plated amorphous silicon film is very thin, so that the deposition of the amorphous silicon film is seriously influenced by the surface topography of the silicon wafer. The texture etching of the silicon wafer can form a pyramid structure, and the structure is easy to cause adverse factors such as plasma discharge and the like in the amorphous silicon deposition process due to sharp peaks, so that the amorphous silicon film deposition is very uneven, the film quality is poor, and the battery conversion efficiency is low.
Three Chinese patents with application numbers of 201210042842.4, 201210402361, X and 201610457457.4 respectively provide a treatment step of etching a sharp pyramid structure on the surface of a silicon wafer into a round and smooth suede, so that the subsequent amorphous silicon thin film can be deposited more uniformly, the amorphous silicon film forming quality is improved, and the performance of the HIT battery is improved.
However, the processing steps of the three patents are all directed at the silicon wafer which is subjected to texturing, so that in the process of preparing the HIT battery, a processing step of etching the sharp pyramid structure on the surface of the silicon wafer into a round and smooth textured surface is required to be added between the texturing step and the step of plating the amorphous silicon film, and the working hours and the cost are increased.
Disclosure of Invention
The invention aims to provide an additive for monocrystalline texturing, which is added into an alkaline texturing solution of a monocrystalline silicon wafer, so that a texturing sheet with a round and smooth texture surface can be directly obtained through texturing, a formed pyramid structure is not sharp any more, and the top of the pyramid structure is provided with a certain round smooth surface.
In order to achieve the aim, the invention provides an additive for single crystal texturing, which comprises the following components in percentage by mass: 0.5 to 10 percent of nucleating agent, 0.02 to 0.5 percent of suede conditioning agent, 0.1 to 0.5 percent of defoaming agent and the balance of water.
Preferably, the nucleating agent is selected from one or more of polyglutamic acid, polyaspartic acid, polylysine, polydiaminobutyric acid and polydiaminopropionic acid.
Preferably, the suede conditioner is selected from one or more of disodium undecylenamide MEA sulfosuccinate, disodium cocoamphodiacetate and disodium lauroamphodiacetate.
Preferably, the defoaming agent is one or more selected from diethylene glycol, triethylene glycol and tetraethylene glycol.
Preferably, the water is deionized water.
The invention also provides a texturing solution for single crystal texturing, which contains the alkali solution and the additive, wherein the mass ratio of the additive to the alkali solution is 0.25-2.0: 100, and the alkali solution is an inorganic alkali aqueous solution.
Preferably, the alkali solution is 1-3 wt% of sodium hydroxide or potassium hydroxide aqueous solution.
The invention also provides a monocrystalline texturing method, which utilizes the texturing solution to carry out surface texturing on a monocrystalline silicon wafer.
Preferably, the single crystal texturing method includes the following specific steps:
1) preparing an additive: adding 0.5-10% of nucleating agent, 0.02-0.5% of suede conditioning agent and 0.1-0.5% of defoaming agent into the balance of water, and mixing uniformly to prepare an additive;
2) preparing a texturing solution: adding the additive prepared in the step 1) into an alkali solution, and uniformly mixing to prepare a texturing solution; the mass ratio of the additive to the alkali solution is 0.25-2.0: 100; the alkali solution is an inorganic alkali aqueous solution;
3) and (3) immersing the monocrystalline silicon wafer into the texturing solution prepared in the step 2) for surface texturing, wherein the texturing temperature is 75-85 ℃, and the texturing time is 11-20 min.
The invention also provides a preparation method of the HIT battery, which comprises a texturing step, wherein the texturing step is implemented according to the single-crystal texturing method.
Preferably, the method for preparing the HIT battery further comprises an amorphous silicon film plating step, wherein the amorphous silicon film plating step is performed after the texturing step; and between the texture making step and the amorphous silicon film plating step, the processing step of etching the sharp pyramid structure on the surface of the silicon wafer into a round and smooth texture is not added.
The invention has the advantages and beneficial effects that: the additive for single crystal texturing is added into alkaline texturing solution of a single crystal silicon wafer, texturing can be directly conducted to obtain a texturing sheet with a round and smooth textured surface, a formed pyramid structure is not sharp any more, and the top of the pyramid structure is provided with a certain smooth surface.
The additive is suitable for preparing HIT batteries, and in the texturing step of preparing HIT batteries, the additive is added into alkaline texturing liquid, so that texturing sheets with round and smooth texturing surfaces can be directly obtained, amorphous silicon thin films of subsequent texturing sheets can be deposited more uniformly, the amorphous silicon film forming quality is improved, and the performance of HIT batteries is improved.
Because the invention can directly adjust the sharp pyramid structure into the round and smooth suede in the suede making step, the processing step of etching the sharp pyramid structure on the surface of the silicon wafer into the round and smooth suede is not additionally and particularly added between the suede making step and the amorphous silicon film plating step in the HIT battery preparation process, thereby saving the working hour and the cost.
Drawings
FIG. 1 shows the textured surface of the textured silicon wafer after texturing in example 1.
Detailed Description
The following description of the embodiments of the present invention will be made with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
Example 1
The invention provides a single crystal texturing method, which comprises the following specific steps:
1) preparing an additive: adding 0.5-10% of nucleating agent, 0.02-0.5% of suede conditioning agent and 0.1-0.5% of defoaming agent into the balance of water, and mixing uniformly to prepare an additive;
the nucleating agent is selected from one or more of polyglutamic acid, polyaspartic acid, polylysine, polydiaminobutyric acid and polydiaminopropionic acid;
the suede conditioning agent is selected from one or more of disodium undecylenic amide MEA sulfosuccinate, disodium cocoyl amphodiacetate and disodium lauroamphodiacetate;
the defoaming agent is selected from one or more of diethylene glycol, triethylene glycol and tetraethylene glycol;
the water is preferably deionized water;
2) preparing a texturing solution: adding the additive prepared in the step 1) into an alkali solution, and uniformly mixing to prepare a texturing solution; the mass ratio of the additive to the alkali solution is 0.25-2.0: 100; the alkali solution is 1-3 wt% of sodium hydroxide or potassium hydroxide aqueous solution;
3) and (3) immersing the monocrystalline silicon wafer into the texturing solution prepared in the step 2) for surface texturing, wherein the texturing temperature is 75-85 ℃, and the texturing time is 11-20 min.
The texture surface appearance of the silicon wafer after texture surface making in the embodiment 1 is shown in figure 1, and as can be seen from figure 1, the size of the pyramid structure of the texture surface is basically 3-6 μm, so that the texture surface has good uniformity; the suede is round and smooth, the formed pyramid structure is not sharp any more, and the top of the pyramid structure is provided with a certain smooth surface.
Example 2
The invention also provides a preparation method of the HIT battery, which comprises a texturing step and an amorphous silicon film plating step, wherein the amorphous silicon film plating step is carried out after the texturing step; the texturing step was carried out according to the single crystal texturing method of example 1; and between the texture making step and the amorphous silicon film plating step, the processing step of etching the sharp pyramid structure on the surface of the silicon wafer into a round and smooth texture is not added.
Because the sharp pyramid structure can be directly adjusted into the round and smooth suede in the suede making step, a processing step of etching the sharp pyramid structure on the surface of the silicon wafer into the round and smooth suede is not additionally and particularly added between the suede making step and the amorphous silicon film plating step in the HIT battery preparation process, so that the working time and the cost are saved.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the technical principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (7)
1. The additive for single crystal texturing is characterized by comprising the following components in percentage by mass: 0.5 to 10 percent of nucleating agent, 0.02 to 0.5 percent of suede conditioning agent, 0.1 to 0.5 percent of defoaming agent and the balance of water;
the nucleating agent is selected from one or more of polyglutamic acid, polyaspartic acid, polylysine, polydiaminobutyric acid and polydiaminopropionic acid;
the suede conditioning agent is selected from one or more of disodium undecylenic amide MEA sulfosuccinate, disodium cocoyl amphodiacetate and disodium lauroamphodiacetate;
the defoaming agent is selected from one or more of diethylene glycol, triethylene glycol and tetraethylene glycol.
2. An additive for single crystal texturing according to claim 1, wherein the water is deionized water.
3. The texturing solution for single crystal texturing is characterized by comprising an alkali solution and the additive described in claim 1 or 2, wherein the mass ratio of the additive to the alkali solution is 0.25-2.0: 100, and the alkali solution is an inorganic alkali aqueous solution.
4. A texturing solution for single crystal texturing according to claim 3, wherein the alkali solution is a 1 to 3wt% aqueous solution of sodium hydroxide or potassium hydroxide.
5. A method of texturing a single crystal silicon wafer, comprising texturing a surface of a single crystal silicon wafer with the texturing solution according to claim 3 or 4.
6. A single crystal texturing method according to claim 5, characterized in that the specific steps thereof include:
1) preparing an additive: adding 0.5-10% of nucleating agent, 0.02-0.5% of suede conditioning agent and 0.1-0.5% of defoaming agent into the balance of water, and mixing uniformly to prepare an additive;
2) preparing a texturing solution: adding the additive prepared in the step 1) into an alkali solution, and uniformly mixing to prepare a texturing solution; the mass ratio of the additive to the alkali solution is 0.25-2.0: 100; the alkali solution is an inorganic alkali aqueous solution;
3) and (3) immersing the monocrystalline silicon wafer into the texturing solution prepared in the step 2) for surface texturing, wherein the texturing temperature is 75-85 ℃, and the texturing time is 11-20 min.
A method of manufacturing an HIT cell, comprising a texturing step, wherein the texturing step is performed according to the single crystal texturing method of claim 5 or 6.
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| CN113529174A (en) * | 2021-07-01 | 2021-10-22 | 常州时创能源股份有限公司 | Texturing method and application of monocrystalline silicon wafer |
| CN116435403B (en) * | 2023-02-28 | 2024-09-17 | 六智韬新能源科技(上海)有限公司 | Flexible monocrystalline silicon piece, flexible solar cell and preparation method of flexible monocrystalline silicon piece and flexible solar cell |
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| CN103643289B (en) * | 2013-12-03 | 2016-07-06 | 上海交通大学 | The monocrystalline silicon surface structure of chemically based etching and preparation thereof and application |
| CN105895714A (en) * | 2016-06-22 | 2016-08-24 | 苏州协鑫集成科技工业应用研究院有限公司 | Smooth modification liquid, smooth modification method, heterojunction solar cell silicon wafer and heterojunction solar cell |
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