CN111441025A - Corrosion-resistant high-entropy alloy film, preparation method and application in seawater environment - Google Patents
Corrosion-resistant high-entropy alloy film, preparation method and application in seawater environment Download PDFInfo
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
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- C22C30/00—Alloys containing less than 50% by weight of each constituent
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Abstract
本发明公开了一种耐腐蚀高熵合金薄膜、制备方法及其在海水环境下的应用。所述耐腐蚀高熵合金薄膜的制备方法包括:采用VAlTiCrCu高熵合金薄膜,在真空度低于1.0×10–3Pa的保护性气氛中,对所述VAlTiCrCu高熵合金薄膜进行退火处理,所述退火处理采用的退火温度为700~1100℃,退火时间为1~3h,之后冷却至室温,获得耐腐蚀高熵合金薄膜。本发明采用不同温度对VAlTiCrCu高熵合金薄膜进行退火处理,使VAlTiCrCu高熵合金薄膜单相BCC结构中析出新的FCC相,组织结构改变明显,硬度提升了20%~30%,弹性模量提高了20%~30%,自腐蚀电流密度进一步降低,可用于海水环境下的基体防护。
The invention discloses a corrosion-resistant high-entropy alloy film, a preparation method and its application in seawater environment. The preparation method of the corrosion-resistant high-entropy alloy film includes: using a VAlTiCrCu high-entropy alloy film, and annealing the VAlTiCrCu high-entropy alloy film in a protective atmosphere with a vacuum degree of less than 1.0×10 −3 Pa, so that the VAlTiCrCu high-entropy alloy film is annealed. The annealing temperature used in the annealing treatment is 700-1100° C., the annealing time is 1-3 h, and then cooled to room temperature to obtain a corrosion-resistant high-entropy alloy film. The invention adopts different temperatures to anneal the VAlTiCrCu high-entropy alloy film, so that a new FCC phase is precipitated in the single-phase BCC structure of the VAlTiCrCu high-entropy alloy film, the microstructure changes obviously, the hardness is increased by 20% to 30%, and the elastic modulus is improved 20% to 30%, the self-corrosion current density is further reduced, and it can be used for matrix protection in seawater environment.
Description
技术领域technical field
本发明涉及合金薄膜及其制备技术领域,具体涉及一种耐腐蚀高熵合金薄膜、制备方法及其在海水环境下的应用。The invention relates to the technical field of alloy films and their preparation, in particular to a corrosion-resistant high-entropy alloy film, a preparation method and its application in seawater environment.
背景技术Background technique
传统的以一种或两种元素、化合物为主元的合金体系经过人们长期的研究已经趋于成熟饱和,传统金属材料的性能在生产生活上已经不能满足人们的需求。在此背景下,一类新型合金薄膜材料——高熵合金薄膜以其优异的综合性能在近年来得到广泛关注和研究。高熵合金薄膜是由五种或五种以上元素组元构成的合金薄膜,且每种元素含量介于5%~35%之间,这种设计突破了传统合金的设计理念,且往往具有多重理想性质,如优异的耐磨损性能、耐腐蚀性能、热稳定性及抗断裂拉伸能力。The traditional alloy system based on one or two elements and compounds has become mature and saturated after long-term research, and the performance of traditional metal materials can no longer meet people's needs in production and life. In this context, a new type of alloy thin film material, high-entropy alloy thin film, has received extensive attention and research in recent years due to its excellent comprehensive properties. The high-entropy alloy film is an alloy film composed of five or more elements, and the content of each element is between 5% and 35%. This design breaks through the design concept of traditional alloys and often has multiple elements. Desirable properties such as excellent abrasion resistance, corrosion resistance, thermal stability and tensile strength at break.
目前,针对高熵合金领域的研究主要基于铸态合金,而对高熵合金薄膜的研究较少,且对高熵合金薄膜通过热处理工艺来提高其力学性能、耐腐蚀性能的研究更少。目前,高熵合金薄膜在制备过程中多选用高熵合金靶或者单个元素与低组元合金靶材的组合。但是,高熵合金靶难以调控元素含量,制作工艺复杂且成本高;而采用单个元素的独立靶材难以获得成分均匀的高熵涂层。At present, the research in the field of high-entropy alloys is mainly based on as-cast alloys, while the research on high-entropy alloy films is less, and there is less research on the improvement of mechanical properties and corrosion resistance of high-entropy alloy films by heat treatment. At present, high-entropy alloy targets or a combination of a single element and a low-component alloy target are mostly used in the preparation process of high-entropy alloy films. However, the high-entropy alloy target is difficult to control the element content, the production process is complex and the cost is high; and it is difficult to obtain a high-entropy coating with a uniform composition for an independent target using a single element.
发明内容SUMMARY OF THE INVENTION
本发明的主要目的在于提供一种组织结构改变明显,硬度提升,弹性模量提高,自腐蚀电流密度降低的耐腐蚀高熵合金薄膜和制备方法,以及在海水环境下的应用,从而克服了现有技术中的不足。The main purpose of the present invention is to provide a corrosion-resistant high-entropy alloy film with obvious changes in structure, improved hardness, improved elastic modulus, and reduced self-corrosion current density, and a preparation method, as well as the application in seawater environment, thereby overcoming the existing problems. There are technical deficiencies.
为实现上述发明目的,本发明采用了如下技术方案:In order to realize the above-mentioned purpose of the invention, the present invention has adopted the following technical solutions:
一种耐腐蚀高熵合金薄膜的制备方法,包括如下步骤:A preparation method of a corrosion-resistant high-entropy alloy film, comprising the following steps:
(1)以磁控溅射拼接复合靶为阴极靶材;(1) The magnetron sputtering splicing composite target is used as the cathode target;
(2)对基体表面进行机械磨抛处理、清洗,将基体放入磁控溅射腔体且与腔体中心的阴极靶材表面平行;(2) Perform mechanical grinding and polishing treatment and cleaning on the surface of the substrate, and put the substrate into the magnetron sputtering cavity and be parallel to the surface of the cathode target in the center of the cavity;
(3)对磁控溅射腔体充入保护性气体为工作气体,采用磁控溅射技术对步骤(1)中的拼接复合靶进行磁控溅射,在步骤(2)处理后的基体表面沉积得到VAlTiCrCu高熵合金薄膜;(3) Fill the magnetron sputtering cavity with a protective gas as the working gas, and use the magnetron sputtering technology to perform magnetron sputtering on the spliced composite target in step (1), and the substrate after the treatment in step (2) is used for magnetron sputtering. The VAlTiCrCu high-entropy alloy thin film was obtained by surface deposition;
(4)将磁控溅射得到的VAlTiCrCu高熵合金薄膜样品置于马弗炉中的石英管中在真空度低于1.0×10–3Pa的保护性气氛中;(4) The VAlTiCrCu high-entropy alloy thin film sample obtained by magnetron sputtering was placed in a quartz tube in a muffle furnace in a protective atmosphere with a vacuum degree lower than 1.0×10 -3 Pa;
(5)采用马弗炉对VAlTiCrCu高熵合金薄膜样品进行退火处理,其退火温度为700~1100℃,退火时间为1~3h,升温速率为5~10℃/min;(5) The VAlTiCrCu high-entropy alloy thin film sample was annealed in a muffle furnace, the annealing temperature was 700-1100 °C, the annealing time was 1-3 h, and the heating rate was 5-10 °C/min;
(6)然后随炉冷却至室温,获得耐腐蚀高熵合金薄膜。(6) and then cooled to room temperature with the furnace to obtain a corrosion-resistant high-entropy alloy thin film.
进一步地,在步骤(1)中,所述磁控溅射拼接复合靶包括在垂直方向上呈周期排列的至少一个靶周期,每一个靶周期包括在垂直方向上由上至下依次层叠设置的等原子比的V50Al50复合靶材、等原子比的Ti50Cr50复合靶材和Cu靶材;所述等原子比的V50Al50复合靶材、等原子比的Ti50Cr50复合靶材和Cu靶材的纯度含量均为99.9%。Further, in step (1), the magnetron sputtering splicing composite target includes at least one target cycle arranged periodically in the vertical direction, and each target cycle includes sequentially stacked from top to bottom in the vertical direction. Equal atomic ratio V 50 Al 50 composite target, equi atomic ratio Ti 50 Cr 50 composite target and Cu target; the equi atomic ratio V 50 Al 50 composite target, equiatomic ratio Ti 50 Cr 50 The purity content of the composite target and the Cu target are both 99.9%.
进一步地,所述磁控溅射拼接复合靶包含5~20个靶周期;每一个靶周期中,所述V50Al50复合靶材的厚度为5mm~45mm,所述Ti50Cr50复合靶材的厚度为5mm~45mm,所述Cu靶材的厚度为5mm~45mm。Further, the magnetron sputtering splicing composite target includes 5 to 20 target cycles; in each target cycle, the V 50 Al 50 composite target has a thickness of 5 mm to 45 mm, and the Ti 50 Cr 50 composite target has a thickness of 5 mm to 45 mm. The thickness of the material is 5 mm to 45 mm, and the thickness of the Cu target material is 5 mm to 45 mm.
进一步地,在步骤(2)中,所述基体的材质为不锈钢金属材料,优选为304不锈钢或316不锈钢;在对基体表面进行机械磨抛处理后,采用石油醚、丙酮和酒精进行超声清洗20min。Further, in step (2), the material of the base body is stainless steel metal material, preferably 304 stainless steel or 316 stainless steel; after the surface of the base body is subjected to mechanical grinding and polishing, petroleum ether, acetone and alcohol are used to carry out ultrasonic cleaning for 20min. .
进一步地,在步骤(3)中,所述磁控溅射技术采用的工艺条件包括:溅射功率为1000W~3000W,基体偏压为-20V~-60V,基体温度为30~400℃,反应腔体内压力为3×10-2~7×10-2mbar,保护性气体流量为100~200sccm,沉积时间为4~8h;且保护性气体为惰性气体,尤其优选为氩气,但不限于此。Further, in step (3), the process conditions adopted by the magnetron sputtering technology include: the sputtering power is 1000W-3000W, the substrate bias voltage is -20V--60V, the substrate temperature is 30-400°C, and the reaction The pressure in the chamber is 3×10 -2 to 7×10 -2 mbar, the flow rate of the protective gas is 100 to 200 sccm, and the deposition time is 4 to 8 hours; and the protective gas is an inert gas, particularly preferably argon, but not limited to this.
进一步地,在步骤(3)中,在进行磁控溅射之前,先将反应腔体抽真空至真空度低于1.0×10–3Pa,利用Ar离子对复合靶轰击30min,去除靶材表面的杂质及氧化物,并在溅射过程中通Ar保护气氛,以防止在溅射过程中产生氧化物;并利用辉光放电原理对基体表面进行离子刻蚀清洗15min,以除去基体表面的氧化层和污染物。Further, in step (3), before the magnetron sputtering is performed, the reaction chamber is evacuated to a degree of vacuum lower than 1.0×10 −3 Pa, and the composite target is bombarded with Ar ions for 30 minutes to remove the surface of the target material. The impurity and oxides are removed, and the Ar protective atmosphere is passed through the sputtering process to prevent oxides from being generated during the sputtering process; and the surface of the substrate is ion-etched and cleaned for 15 minutes by the principle of glow discharge to remove the oxidation on the surface of the substrate. layers and contaminants.
进一步地,在步骤(3)中,其制备得到的VAlTiCrCu高熵合金薄膜呈单相体心立方结构,所述VAlTiCrCu高熵合金薄膜的分子式为VAlTiCrCu,且所述VAlTiCrCu高熵合金薄膜包含按照原子百分含量计算的如下元素:V 10~20%、Al 10~20%、Ti 10~20%、Cr 10~30%和Cu 10~30%。该VAlTiCrCu高熵合金薄膜是利用磁控溅射技术在基体表面沉积而获得的,是由钒、铝、钛、铬、铜元素组成的单相体心立方结构。并且,利用磁控溅射技术在基体表面沉积该VAlTiCrCu薄膜,一方面由于各元素原子之间的尺寸差异大而容易造成晶格畸变,另一方面组成元素中含有大量的体心立方结构的V、Ti和Cr元素,因此利用该方法得到的VAlTiCrCu薄膜呈单相体心立方结构。Further, in step (3), the prepared VAlTiCrCu high-entropy alloy thin film has a single-phase body-centered cubic structure, the molecular formula of the VAlTiCrCu high-entropy alloy thin film is VAlTiCrCu, and the VAlTiCrCu high-entropy alloy thin film contains atomic The following elements are calculated in percentage: V 10-20%, Al 10-20%, Ti 10-20%, Cr 10-30% and Cu 10-30%. The VAlTiCrCu high-entropy alloy thin film is obtained by depositing on the surface of the substrate by magnetron sputtering technology, and is a single-phase body-centered cubic structure composed of vanadium, aluminum, titanium, chromium, and copper elements. In addition, the VAlTiCrCu film is deposited on the surface of the substrate by the magnetron sputtering technology. On the one hand, due to the large size difference between the atoms of each element, it is easy to cause lattice distortion. , Ti and Cr elements, so the VAlTiCrCu film obtained by this method has a single-phase body-centered cubic structure.
进一步地,所述VAlTiCrCu高熵合金薄膜的硬度大于10Gpa,弹性模量大于220Gpa,自腐蚀电流密度低于3.62×10-8A/cm2;所述VAlTiCrCu高熵合金薄膜的厚度为2000nm~4000nm。Further, the hardness of the VAlTiCrCu high-entropy alloy film is greater than 10 Gpa, the elastic modulus is greater than 220 Gpa, and the self-corrosion current density is lower than 3.62×10 -8 A/cm 2 ; the thickness of the VAlTiCrCu high-entropy alloy film is 2000nm~4000nm .
本发明还提供了根据上述制备方法所制得的耐腐蚀高熵合金薄膜,所述耐腐蚀高熵合金薄膜呈体心立方结构和面心立方结构共存的结构,所述耐腐蚀高熵合金薄膜的硬度为10.03~13.24GPa,弹性模量为202.43~278.36Gpa,自腐蚀电流密度为5.26×10-9~2.87×10-7A/cm2。The present invention also provides a corrosion-resistant high-entropy alloy film prepared according to the above preparation method. The hardness is 10.03~13.24GPa, the elastic modulus is 202.43~278.36Gpa, and the self-corrosion current density is 5.26×10 -9 ~2.87×10 -7 A/cm 2 .
本发明还提供了耐腐蚀高熵合金薄膜在海水环境下基体表面防护领域中的应用。The invention also provides the application of the corrosion-resistant high-entropy alloy thin film in the field of substrate surface protection in seawater environment.
与现有技术相比,本发明具有以下有益效果:Compared with the prior art, the present invention has the following beneficial effects:
1)本发明采用不同温度对VAlTiCrCu高熵合金薄膜进行退火处理,使VAlTiCrCu高熵合金薄膜单相BCC结构中析出新的FCC相,组织结构改变明显,且使VAlTiCrCu高熵合金薄膜在既有高性能基础上,硬度提升了20%~30%,弹性模量提高了20%~30%,自腐蚀电流密度进一步降低,最多降低1个数量级;1) The present invention uses different temperatures to anneal the VAlTiCrCu high-entropy alloy thin film, so that a new FCC phase is precipitated in the single-phase BCC structure of the VAlTiCrCu high-entropy alloy thin film, and the structure changes obviously, and the VAlTiCrCu high-entropy alloy thin film is in the existing high-entropy alloy thin film. On the basis of performance, the hardness is increased by 20% to 30%, the elastic modulus is increased by 20% to 30%, and the self-corrosion current density is further reduced by at most 1 order of magnitude;
2)本发明将靶材以V50Al50-Ti50Cr50-Cu的形式依次层叠、周期排列,在保证了低制作成本和元素种类易调控的同时,新靶材形式中各元素原子比更接近1:1:1:1:1,利于获得体系内最高的混合熵,从而抑制金属间化合物的形成,强化各元素固溶,能够获得组织成分更均匀、性能表现更优的VAlTiCrCu高熵合金薄膜;2) In the present invention, the targets are sequentially stacked and periodically arranged in the form of V 50 Al 50 -Ti 50 Cr 50 -Cu. While ensuring low production cost and easy control of element types, the atomic ratio of each element in the new target form is It is closer to 1:1:1:1:1, which is beneficial to obtain the highest mixing entropy in the system, thereby inhibiting the formation of intermetallic compounds, strengthening the solid solution of each element, and obtaining VAlTiCrCu high entropy with more uniform composition and better performance. Alloy film;
3)本发明中的VAlTiCrCu高熵合金薄膜一方面由耐腐蚀性组元V、Al、Ti、Cr、Cu构成;另一方面采用磁控溅射技术、且组成元素中含有大量体心立方结构的V、Ti和Cr元素而呈单相体心立方结构;因此该VAlTiCrCu高熵合金薄膜具有高硬度以及优异的耐腐蚀性能,其硬度高于10Gpa,弹性模量大于220Gpa,自腐蚀电流密度低至3.62×10-8A/cm2,因此是一种耐磨耐腐蚀的材料,可在高磨损、高腐蚀的恶劣环境中对基体进行良好保护,例如可用于海水环境下的基体防护等。3) The VAlTiCrCu high-entropy alloy film in the present invention is composed of corrosion-resistant components V, Al, Ti, Cr, and Cu on the one hand; on the other hand, the magnetron sputtering technology is used, and the constituent elements contain a large number of body-centered cubic structures Therefore, the VAlTiCrCu high-entropy alloy film has high hardness and excellent corrosion resistance, its hardness is higher than 10Gpa, its elastic modulus is higher than 220Gpa, and its self-corrosion current density is low. 3.62×10 -8 A/cm 2 , so it is a wear-resistant and corrosion-resistant material, which can well protect the substrate in harsh environments with high wear and corrosion, such as substrate protection in seawater environments.
附图说明Description of drawings
图1是本发明实施例1~3中的VAlTiCrCu拼接复合靶的截面结构示意图。FIG. 1 is a schematic cross-sectional structure diagram of the VAlTiCrCu splicing composite target in Examples 1 to 3 of the present invention.
图2是本发明实施例1~3中制得的VAlTiCrCu高熵合金薄膜及退火处理后的耐腐蚀VAlTiCrCu高熵合金薄膜的XRD衍射图谱。FIG. 2 is the XRD diffraction patterns of the VAlTiCrCu high-entropy alloy thin films prepared in Examples 1 to 3 of the present invention and the corrosion-resistant VAlTiCrCu high-entropy alloy thin films after annealing treatment.
图3是本发明实施例1~3中制得的VAlTiCrCu高熵合金薄膜及退火处理后的耐腐蚀VAlTiCrCu高熵合金薄膜经电化学测试获得的动态极化曲线图。3 is a dynamic polarization curve diagram obtained by electrochemical testing of the VAlTiCrCu high-entropy alloy thin films prepared in Examples 1 to 3 of the present invention and the corrosion-resistant VAlTiCrCu high-entropy alloy thin films after annealing treatment.
具体实施方式Detailed ways
下面结合若干优选实施例及附图对本发明的技术方案做进一步详细说明,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。需要指出的是,以下所述实施例旨在便于对本发明的理解,而对其不起任何限定作用。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例,都属于本发明保护的范围。下列实施例中未注明具体条件的试验方法,通常按照常规条件。The technical solutions of the present invention will be described in further detail below with reference to several preferred embodiments and accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. It should be pointed out that the following examples are intended to facilitate the understanding of the present invention, but do not have any limiting effect on it. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present invention. In the following examples, the test methods without specific conditions are generally in accordance with conventional conditions.
本发明主要针对高熵合金薄膜,且采用热处理改善高熵合金薄膜的力学性能及耐腐蚀性能,具有十分重要的意义。The invention is mainly aimed at the high-entropy alloy thin film, and the use of heat treatment to improve the mechanical properties and corrosion resistance of the high-entropy alloy thin film is of great significance.
实施例1Example 1
本实施例中,基体材料为304不锈钢,基体表面是单相体心立方结构的VAlTiCrCu高熵合金薄膜。In this embodiment, the base material is 304 stainless steel, and the surface of the base is a VAlTiCrCu high-entropy alloy film with a single-phase body-centered cubic structure.
该VAlTiCrCu高熵合金薄膜的制备方法如下:The preparation method of the VAlTiCrCu high-entropy alloy thin film is as follows:
采用磁控溅射技术,在基体表面制备VAlTiCrCu高熵合金薄膜,具体包括如下步骤:Using magnetron sputtering technology, a VAlTiCrCu high-entropy alloy thin film is prepared on the surface of the substrate, which specifically includes the following steps:
(1)如图1所示,选择原料纯度≥99.9%的等原子比的V50Al50靶材、等原子比的Ti50Cr50靶材和Cu靶材,在垂直方向按照V50Al50-Ti50Cr50-Cu的顺序自上而下依次层叠排列厚度分别为20mm、20mm、10mm的各靶材,此为一个靶周期;然后,在垂直方向包括12个所述靶周期,形成拼接复合靶。(1) As shown in Fig. 1, select V 50 Al 50 target with equal atomic ratio, Ti 50 Cr 50 target and Cu target with equal atomic ratio with raw material purity ≥99.9%, and follow V 50 Al 50 in the vertical direction -Ti 50 Cr 50 -Cu in the order of stacking and arranging targets with thicknesses of 20mm, 20mm, and 10mm from top to bottom, this is one target period; then, including 12 target periods in the vertical direction, forming a splicing composite target.
(2)对基体表面进行机械磨抛处理,再依次用石油醚、丙酮和酒精进行超声清洗20min,之后用氮气吹干;此后,将基体放入磁控溅射腔体且与腔体中心的靶材表面平行。在沉积之前抽真空至真空度低于10-3Pa,利用Ar离子对复合靶轰击30min,并对基体样品进行离子刻蚀15min。(2) The surface of the substrate is subjected to mechanical grinding and polishing, and then ultrasonically cleaned with petroleum ether, acetone and alcohol for 20 minutes in turn, and then dried with nitrogen; The target surfaces are parallel. Vacuum was evacuated to less than 10 -3 Pa before deposition, the composite target was bombarded with Ar ions for 30 minutes, and the substrate sample was ion-etched for 15 minutes.
(3)反应腔体中充入流量150sccm的99.99wt.%的高纯氩气,磁控溅射步骤(1)中的拼接复合靶,在步骤(2)处理后的基体表面沉积6h,得到VAlTiCrCu高熵合金薄膜,溅射过程中,参数设置基体温度为300℃、溅射功率为2000W、基体偏压为-50V,反应腔体内压力为6×10-2mbar,制得VAlTiCrCu高熵合金薄膜。(3) The reaction chamber is filled with 99.99 wt.% high-purity argon gas with a flow rate of 150 sccm, and the spliced composite target in the magnetron sputtering step (1) is deposited on the surface of the substrate after the step (2) for 6 hours, to obtain VAlTiCrCu high-entropy alloy thin film, during the sputtering process, the parameters set the substrate temperature to 300 °C, the sputtering power to 2000 W, the substrate bias to -50 V, and the pressure in the reaction chamber to be 6×10 -2 mbar to prepare the VAlTiCrCu high-entropy alloy. film.
将磁控溅射得到的VAlTiCrCu高熵合金薄膜进行硬度、弹性模量及耐腐蚀性能的提升,具体步骤如下:The hardness, elastic modulus and corrosion resistance of the VAlTiCrCu high-entropy alloy film obtained by magnetron sputtering are improved, and the specific steps are as follows:
(1)将制备好的VAlTiCrCu高熵合金薄膜样品置于马弗炉中的石英管中抽至真空度10-3Pa以下;(1) The prepared VAlTiCrCu high-entropy alloy thin film sample is placed in a quartz tube in a muffle furnace and evacuated to a degree of vacuum below 10 -3 Pa;
(2)采用马弗炉对样品进行退火处理,采用升温速率为10℃/min,控制退火温度为700℃,退火时间为3h,期间通入足量高纯氩气保护;(2) The sample was annealed in a muffle furnace, the heating rate was 10°C/min, the annealing temperature was controlled at 700°C, the annealing time was 3h, and a sufficient amount of high-purity argon was introduced during the protection;
(3)将所述VAlTiCrCu高熵合金薄膜样品从室温升温至指定温度后进行保温处理,然后随炉冷却至室温,获得耐腐蚀高熵合金薄膜。(3) The VAlTiCrCu high-entropy alloy thin film sample is heated from room temperature to a specified temperature and then subjected to heat preservation treatment, and then cooled to room temperature with the furnace to obtain a corrosion-resistant high-entropy alloy thin film.
对上述实施例制备的VAlTiCrCu高熵合金薄膜(作为对照)及耐腐蚀高熵合金薄膜样品进行如下测试:The VAlTiCrCu high-entropy alloy thin film (as a control) and the corrosion-resistant high-entropy alloy thin film sample prepared in the above embodiment are tested as follows:
1、对VAlTiCrCu高熵合金薄膜样品进行X射线衍射分析成分及结构,如图3所示。1. The composition and structure of the VAlTiCrCu high-entropy alloy thin film sample were analyzed by X-ray diffraction, as shown in Figure 3.
2、通过纳米压痕设备Nanoindenter(MTS Corporation,G200)对该VAlTiCrCu高熵合金薄膜样品表面压入六个深度均为200nm的点,测量硬度和弹性模量,根据测量结果计算平均值,其具体数值如表2所示。2. The VAlTiCrCu high-entropy alloy thin film sample was indented with six points with a depth of 200 nm on the surface of the VAlTiCrCu high-entropy alloy thin film sample by a nanoindenter (MTS Corporation, G200), and the hardness and elastic modulus were measured, and the average value was calculated according to the measurement results. The values are shown in Table 2.
3、对退火前及700℃退火后的VAlTiCrCu高熵合金薄膜样品进行电化学测试,获得其动态极化曲线,如图3所示;其自腐蚀电位和自腐蚀电流密度的具体数值如表3所示。3. Electrochemical tests were performed on the VAlTiCrCu high-entropy alloy thin film samples before annealing and after annealing at 700 °C, and their dynamic polarization curves were obtained, as shown in Figure 3; the specific values of their self-corrosion potential and self-corrosion current density are shown in Table 3 shown.
实施例2Example 2
本实施例中,基体材料为304不锈钢,基体表面是VAlTiCrCu高熵合金薄膜。In this embodiment, the base material is 304 stainless steel, and the base surface is a VAlTiCrCu high-entropy alloy thin film.
该VAlTiCrCu高熵合金薄膜的制备方法如下:The preparation method of the VAlTiCrCu high-entropy alloy thin film is as follows:
采用磁控溅射技术,在基体表面制备VAlTiCrCu高熵合金薄膜,具体包括如下步骤:Using magnetron sputtering technology, a VAlTiCrCu high-entropy alloy thin film is prepared on the surface of the substrate, which specifically includes the following steps:
(1)如图1所示,选择原料纯度≥99.9%的等原子比的V50Al50靶材、等原子比的Ti50Cr50靶材和Cu靶材,在垂直方向按照V50Al50-Ti50Cr50-Cu的顺序自上而下依次层叠排列厚度分别为20mm、20mm、10mm的各靶材,此为一个靶周期;然后,在垂直方向包括12个所述靶周期,形成拼接复合靶。(1) As shown in Fig. 1, select V 50 Al 50 target with equal atomic ratio, Ti 50 Cr 50 target and Cu target with equal atomic ratio with raw material purity ≥99.9%, and follow V 50 Al 50 in the vertical direction -Ti 50 Cr 50 -Cu in the order of stacking and arranging targets with thicknesses of 20mm, 20mm, and 10mm from top to bottom, this is one target period; then, including 12 target periods in the vertical direction, forming a splicing composite target.
(2)对基体表面进行机械磨抛处理,再依次用石油醚、丙酮和酒精进行超声清洗20min,之后用氮气吹干;此后,将基体放入磁控溅射腔体且与腔体中心的靶材表面平行。在沉积之前抽真空至真空度低于10-3Pa,利用Ar离子对复合靶轰击30min,并对基体样品进行离子刻蚀15min。(2) The surface of the substrate is subjected to mechanical grinding and polishing, and then ultrasonically cleaned with petroleum ether, acetone and alcohol for 20 minutes in turn, and then dried with nitrogen; The target surfaces are parallel. Vacuum was evacuated to less than 10 -3 Pa before deposition, the composite target was bombarded with Ar ions for 30 minutes, and the substrate sample was ion-etched for 15 minutes.
(3)反应腔体中充入流量150sccm的99.99wt.%的高纯氩气,磁控溅射步骤(1)中的拼接复合靶,在步骤(2)处理后的基体表面沉积6h,得到VAlTiCrCu高熵合金薄膜,溅射过程中,参数设置基体温度为300℃、溅射功率为2000W、基体偏压为-50V,反应腔体内压力为4×10-2mbar,制得VAlTiCrCu高熵合金薄膜。(3) The reaction chamber is filled with 99.99 wt.% high-purity argon gas with a flow rate of 150 sccm, and the spliced composite target in the magnetron sputtering step (1) is deposited on the surface of the substrate after the step (2) for 6 hours, to obtain VAlTiCrCu high-entropy alloy thin film, during the sputtering process, the parameters set the substrate temperature as 300℃, the sputtering power as 2000W, the substrate bias as -50V, and the pressure in the reaction chamber as 4×10 -2 mbar to prepare the VAlTiCrCu high-entropy alloy. film.
将磁控溅射得到的VAlTiCrCu高熵合金薄膜进行硬度、弹性模量及耐腐蚀性能的提升,具体步骤如下:The hardness, elastic modulus and corrosion resistance of the VAlTiCrCu high-entropy alloy film obtained by magnetron sputtering are improved, and the specific steps are as follows:
(1)将制备好的VAlTiCrCu高熵合金薄膜样品置于马弗炉中的石英管中抽至真空度10-3Pa以下;(1) The prepared VAlTiCrCu high-entropy alloy thin film sample is placed in a quartz tube in a muffle furnace and evacuated to a vacuum degree below 10 -3 Pa;
(2)采用马弗炉对样品进行退火处理,采用升温速率为10℃/min,控制退火温度为900℃,退火时间为2h,期间通入足量高纯氩气保护;(2) The sample was annealed in a muffle furnace, the heating rate was 10°C/min, the annealing temperature was controlled at 900°C, the annealing time was 2h, and a sufficient amount of high-purity argon was introduced during the protection;
(3)将所述VAlTiCrCu高熵合金薄膜样品从室温升温至指定温度后进行保温处理,然后随炉冷却至室温,获得耐腐蚀高熵合金薄膜,其中BCC与FCC两种相同时存有。(3) The VAlTiCrCu high-entropy alloy thin film sample is heated from room temperature to a specified temperature and then subjected to heat preservation treatment, and then cooled to room temperature with the furnace to obtain a corrosion-resistant high-entropy alloy thin film, in which BCC and FCC exist when both are the same.
对上述实施例制备的VAlTiCrCu高熵合金薄膜(作为对照)及耐腐蚀高熵合金薄膜样品进行如下测试:The VAlTiCrCu high-entropy alloy thin film (as a control) and the corrosion-resistant high-entropy alloy thin film sample prepared in the above embodiment are tested as follows:
1、对VAlTiCrCu高熵合金薄膜样品进行X射线衍射分析成分及结构,如图2所示。1. The composition and structure of the VAlTiCrCu high-entropy alloy thin film sample were analyzed by X-ray diffraction, as shown in Figure 2.
2、通过纳米压痕设备Nanoindenter(MTS Corporation,G200)对该VAlTiCrCu高熵合金薄膜样品表面压入六个深度均为200nm的点,测量硬度和弹性模量,根据测量结果计算平均值,其具体数值如表2所示。2. The VAlTiCrCu high-entropy alloy thin film sample was indented with six points with a depth of 200 nm on the surface of the VAlTiCrCu high-entropy alloy thin film sample by a nanoindenter (MTS Corporation, G200), and the hardness and elastic modulus were measured, and the average value was calculated according to the measurement results. The values are shown in Table 2.
3、对退火前及900℃退火后的VAlTiCrCu高熵合金薄膜样品进行电化学测试,获得其动态极化曲线,如图3所示;其自腐蚀电位和自腐蚀电流密度的具体数值如表3所示。3. Electrochemical tests were performed on the VAlTiCrCu high-entropy alloy thin film samples before annealing and after annealing at 900 °C, and their dynamic polarization curves were obtained, as shown in Figure 3; the specific values of their self-corrosion potential and self-corrosion current density are shown in Table 3 shown.
实施例3Example 3
本实施例中,基体材料为304不锈钢,基体表面是VAlTiCrCu高熵合金薄膜。In this embodiment, the base material is 304 stainless steel, and the base surface is a VAlTiCrCu high-entropy alloy thin film.
该VAlTiCrCu高熵合金薄膜的制备方法如下:The preparation method of the VAlTiCrCu high-entropy alloy thin film is as follows:
采用磁控溅射技术,在基体表面制备VAlTiCrCu高熵合金薄膜,主要包括如下步骤:Using magnetron sputtering technology, the VAlTiCrCu high-entropy alloy thin film is prepared on the surface of the substrate, which mainly includes the following steps:
(1)如图1所示,选择原料纯度≥99.9%的等原子比的V50Al50靶材、等原子比的Ti50Cr50靶材和Cu靶材,在垂直方向按照V50Al50-Ti50Cr50-Cu的顺序自上而下依次层叠排列厚度分别为20mm、20mm、10mm的各靶材,此为一个靶周期;然后,在垂直方向包括12个所述靶周期,形成拼接复合靶。(1) As shown in Fig. 1, select V 50 Al 50 target with equal atomic ratio, Ti 50 Cr 50 target and Cu target with equal atomic ratio with raw material purity ≥99.9%, and follow V 50 Al 50 in the vertical direction -Ti 50 Cr 50 -Cu in the order of stacking and arranging targets with thicknesses of 20mm, 20mm, and 10mm from top to bottom, this is one target period; then, including 12 target periods in the vertical direction, forming a splicing composite target.
(2)对基体表面进行机械磨抛处理,再依次用石油醚、丙酮和酒精进行超声清洗20min,之后用氮气吹干;此后,将基体放入磁控溅射腔体且与腔体中心的靶材表面平行。在沉积之前抽真空至真空度低于10-3Pa,利用Ar离子对复合靶轰击30min,并对基体样品进行离子刻蚀15min。(2) The surface of the substrate is subjected to mechanical grinding and polishing, and then ultrasonically cleaned with petroleum ether, acetone and alcohol for 20 minutes in turn, and then dried with nitrogen; The target surfaces are parallel. Vacuum was evacuated to less than 10 -3 Pa before deposition, the composite target was bombarded with Ar ions for 30 minutes, and the substrate sample was ion-etched for 15 minutes.
(3)反应腔体中充入流量150sccm的99.99wt.%的高纯氩气,磁控溅射步骤(1)中的拼接复合靶,在步骤(2)处理后的基体表面沉积6h,得到VAlTiCrCu高熵合金薄膜,溅射过程中,参数设置基体温度为300℃、溅射功率为2000W、基体偏压为-50V,反应腔体内压力为5×10-2mbar,制得VAlTiCrCu高熵合金薄膜。(3) The reaction chamber is filled with 99.99 wt.% high-purity argon gas with a flow rate of 150 sccm, and the spliced composite target in the magnetron sputtering step (1) is deposited on the surface of the substrate after the step (2) for 6 hours, to obtain VAlTiCrCu high-entropy alloy thin film, during the sputtering process, the parameters set the substrate temperature to 300°C, the sputtering power to 2000W, the substrate bias voltage to -50V, and the pressure in the reaction chamber to be 5×10 -2 mbar to prepare the VAlTiCrCu high-entropy alloy. film.
将磁控溅射得到的VAlTiCrCu高熵合金薄膜进行硬度、弹性模量及耐腐蚀性能的提升,具体步骤如下:The hardness, elastic modulus and corrosion resistance of the VAlTiCrCu high-entropy alloy film obtained by magnetron sputtering are improved, and the specific steps are as follows:
(1)将制备好的VAlTiCrCu高熵合金薄膜样品置于马弗炉中的石英管中抽至真空度10-3Pa以下;(1) The prepared VAlTiCrCu high-entropy alloy thin film sample is placed in a quartz tube in a muffle furnace and evacuated to a vacuum degree below 10 -3 Pa;
(2)采用马弗炉对样品进行退火处理,采用升温速率为10℃/min,控制退火温度为1100℃,退火时间为1h,期间通入足量高纯氩气保护;(2) The sample was annealed in a muffle furnace, the heating rate was 10°C/min, the annealing temperature was controlled to 1100°C, the annealing time was 1h, and a sufficient amount of high-purity argon was introduced during the protection;
(3)将所述VAlTiCrCu高熵合金薄膜样品从室温升温至指定温度后进行保温处理,然后随炉冷却至室温,获得耐腐蚀高熵合金薄膜,其中BCC与FCC两种相同时存有。(3) The VAlTiCrCu high-entropy alloy thin film sample is heated from room temperature to a specified temperature and then subjected to heat preservation treatment, and then cooled to room temperature with the furnace to obtain a corrosion-resistant high-entropy alloy thin film, in which BCC and FCC exist when both are the same.
对上述实施例制备的VAlTiCrCu高熵合金薄膜(作为对照)及耐腐蚀高熵合金薄膜样品进行如下测试:The VAlTiCrCu high-entropy alloy thin film (as a control) and the corrosion-resistant high-entropy alloy thin film sample prepared in the above embodiment are tested as follows:
1、对VAlTiCrCu高熵合金薄膜样品进行X射线衍射分析成分及结构,如图2所示。1. The composition and structure of the VAlTiCrCu high-entropy alloy thin film sample were analyzed by X-ray diffraction, as shown in Figure 2.
2、通过纳米压痕设备Nanoindenter(MTS Corporation,G200)对该VAlTiCrCu高熵合金薄膜样品表面压入六个深度均为200nm的点,测量硬度和弹性模量,根据测量结果计算平均值,其具体数值如表2所示。2. The VAlTiCrCu high-entropy alloy thin film sample was indented with six points with a depth of 200 nm on the surface of the VAlTiCrCu high-entropy alloy thin film sample by a nanoindenter (MTS Corporation, G200), and the hardness and elastic modulus were measured, and the average value was calculated according to the measurement results. The values are shown in Table 2.
3、对退火前及不同温度退火后的VAlTiCrCu高熵合金薄膜样品进行电化学测试,获得其动态极化曲线,如图3所示;其自腐蚀电位和自腐蚀电流密度的具体数值如下表3所示。3. Electrochemical tests were performed on the VAlTiCrCu high-entropy alloy thin film samples before annealing and after annealing at different temperatures, and their dynamic polarization curves were obtained, as shown in Figure 3; the specific values of their self-corrosion potential and self-corrosion current density are shown in Table 3. shown.
对实施例1-3中制得的耐腐蚀VAlTiCrCu高熵合金薄膜样品进行X射线衍射分析成分及结构,图2为VAlTiCrCu高熵合金薄膜(作为对照)及退火处理后的耐腐蚀VAlTiCrCu高熵合金薄膜的XRD衍射图谱。在退火处理前及700℃退火处理后其结构为单相BCC结构,经900℃、1100℃分别进行退火处理后,其结构在原有BCC结构基础上析出新的FCC结构,为BCC与FCC两种相同时存有的结构。The composition and structure of the corrosion-resistant VAlTiCrCu high-entropy alloy film samples prepared in Examples 1-3 were analyzed by X-ray diffraction. Figure 2 shows the VAlTiCrCu high-entropy alloy film (as a control) and the corrosion-resistant VAlTiCrCu high-entropy alloy after annealing treatment. XRD diffraction pattern of the thin film. Before the annealing treatment and after the annealing treatment at 700 °C, the structure is a single-phase BCC structure. After annealing treatment at 900 °C and 1100 °C respectively, the new FCC structure is precipitated on the basis of the original BCC structure, which is BCC and FCC. The same structure exists.
实施例1-3中制得的VAlTiCrCu高熵合金薄膜样品(作为对照)的元素成分含量如表1所示:The elemental composition content of the VAlTiCrCu high-entropy alloy thin film sample (as a control) prepared in Example 1-3 is shown in Table 1:
表1:VAlTiCrCu高熵合金薄膜元素成分含量Table 1: Elemental composition content of VAlTiCrCu high-entropy alloy thin films
从表1可以看出,该VAlTiCrCu高熵合金薄膜样品中各元素的原子百分含量均满足高熵合金中元素的原子百分含量为5%~35%的要求。It can be seen from Table 1 that the atomic percentage content of each element in the VAlTiCrCu high-entropy alloy thin film sample meets the requirement that the atomic percentage of the elements in the high-entropy alloy is 5% to 35%.
通过纳米压痕设备对实施例1-3中退火后的三种薄膜样品表面压入六个深度均为200nm的点,测量硬度和弹性模量,结果如下表2所示。Six points with a depth of 200 nm were pressed into the surfaces of the three film samples after annealing in Examples 1-3 by a nano-indentation device, and the hardness and elastic modulus were measured. The results are shown in Table 2 below.
表2:VAlTiCrCu高熵合金薄膜退火前后的硬度及弹性模量Table 2: Hardness and elastic modulus of VAlTiCrCu high-entropy alloy films before and after annealing
从表2可以看出,退火前后VAlTiCrCu高熵合金薄膜均具有较高的硬度和弹性模量,值得一提的是,在经过900℃退火及1100℃退火后耐腐蚀VAlTiCrCu高熵合金薄膜样品的硬度及弹性模量均提高了20%~30%。It can be seen from Table 2 that the VAlTiCrCu high-entropy alloy thin films before and after annealing have high hardness and elastic modulus. It is worth mentioning that the corrosion-resistant VAlTiCrCu high-entropy alloy thin film samples after annealing at 900 °C and 1100 °C have high entropy alloy films. Both hardness and elastic modulus are increased by 20% to 30%.
对实施例1-3中退火前后的VAlTiCrCu耐腐蚀高熵合金薄膜样品进行电化学测试,其自腐蚀电位和自腐蚀电流密度的具体数值如下表3所示。Electrochemical tests were performed on the VAlTiCrCu corrosion-resistant high-entropy alloy thin film samples before and after annealing in Examples 1-3, and the specific values of their self-corrosion potential and self-corrosion current density are shown in Table 3 below.
表3:VAlTiCrCu高熵合金薄膜退火前后的自腐蚀电位和自腐蚀电流密度Table 3: Self-corrosion potential and self-corrosion current density of VAlTiCrCu high-entropy alloy films before and after annealing
从表3中可以看出,VAlTiCrCu耐腐蚀高熵合金薄膜在经退火处理后其耐腐蚀性能有不同程度改善。其中,经1100℃退火处理后,其自腐蚀电流密度甚至下降一个数量级,退火处理后耐腐蚀性能得到大幅提高。It can be seen from Table 3 that the corrosion resistance of the VAlTiCrCu corrosion-resistant high-entropy alloy film is improved to varying degrees after annealing. Among them, after annealing at 1100 °C, the self-corrosion current density even decreased by an order of magnitude, and the corrosion resistance was greatly improved after annealing.
实施例4Example 4
本实施例中,基体材料为304不锈钢,基体表面是VAlTiCrCu高熵合金薄膜。In this embodiment, the base material is 304 stainless steel, and the base surface is a VAlTiCrCu high-entropy alloy thin film.
该VAlTiCrCu高熵合金薄膜的制备方法如下:The preparation method of the VAlTiCrCu high-entropy alloy thin film is as follows:
采用磁控溅射技术,在基体表面制备VAlTiCrCu高熵合金薄膜,主要包括如下步骤:Using magnetron sputtering technology, the VAlTiCrCu high-entropy alloy thin film is prepared on the surface of the substrate, which mainly includes the following steps:
(1)选择原料纯度≥99.9%的等原子比的V50Al50靶材、等原子比的Ti50Cr50靶材、Cu靶材,在垂直方向按照V50Al50-Ti50Cr50-Cu的顺序自上而下依次层叠排列厚度分别为20mm、20mm、10mm的各靶材,此为一个靶周期;然后,在垂直方向包括20个所述靶周期,形成拼接复合靶。(1) Select V 50 Al 50 targets with an equal atomic ratio, Ti 50 Cr 50 targets and Cu targets with an equal atomic ratio of raw material purity ≥99.9%, in the vertical direction according to V 50 Al 50 -Ti 50 Cr 50 - Each target with thicknesses of 20mm, 20mm, and 10mm is stacked in the order of Cu from top to bottom, which is one target cycle; then, 20 target cycles are included in the vertical direction to form a spliced composite target.
(2)对基体表面进行机械磨抛处理,再依次用石油醚、丙酮和酒精进行超声清洗20min,之后用氮气吹干;此后,将基体放入磁控溅射腔体且与腔体中心的靶材表面平行。在沉积之前抽真空至真空度低于10-3Pa,利用Ar离子对复合靶轰击30min,并对基体样品进行离子刻蚀15min。(2) The surface of the substrate is subjected to mechanical grinding and polishing, and then ultrasonically cleaned with petroleum ether, acetone and alcohol for 20 minutes in turn, and then dried with nitrogen; The target surfaces are parallel. Vacuum was evacuated to less than 10 -3 Pa before deposition, the composite target was bombarded with Ar ions for 30 minutes, and the substrate sample was ion-etched for 15 minutes.
(3)反应腔体中充入流量100sccm的99.99wt.%的高纯氩气,磁控溅射步骤(1)中的拼接复合靶,在步骤(2)处理后的基体表面沉积8h,得到VAlTiCrCu高熵合金薄膜,溅射过程中,参数设置基体温度为400℃、溅射功率为1000W、基体偏压为-60V,反应腔体内压力为3×10-2mbar,制得VAlTiCrCu高熵合金薄膜。(3) The reaction chamber is filled with 99.99 wt.% high-purity argon gas with a flow rate of 100 sccm, and the spliced composite target in the magnetron sputtering step (1) is deposited on the surface of the substrate after the step (2) for 8 hours, to obtain During the sputtering process of VAlTiCrCu high-entropy alloy thin film, the parameters set the substrate temperature to 400°C, the sputtering power to 1000W, the substrate bias to -60V, and the pressure in the reaction chamber to be 3×10 -2 mbar to prepare the VAlTiCrCu high-entropy alloy. film.
将磁控溅射得到的VAlTiCrCu高熵合金薄膜进行硬度、弹性模量及耐腐蚀性能的提升,具体步骤如下:The hardness, elastic modulus and corrosion resistance of the VAlTiCrCu high-entropy alloy film obtained by magnetron sputtering are improved, and the specific steps are as follows:
(1)将制备好的VAlTiCrCu高熵合金薄膜样品置于马弗炉中的石英管中抽至真空度10-3Pa以下;(1) The prepared VAlTiCrCu high-entropy alloy thin film sample is placed in a quartz tube in a muffle furnace and evacuated to a vacuum degree below 10 -3 Pa;
(2)采用马弗炉对样品进行退火处理,采用升温速率为5℃/min,控制退火温度为900℃,退火时间为1h,期间通入足量高纯氩气保护;(2) The sample was annealed in a muffle furnace, the heating rate was 5°C/min, the annealing temperature was controlled at 900°C, the annealing time was 1h, and a sufficient amount of high-purity argon was introduced during the protection;
(3)将所述VAlTiCrCu高熵合金薄膜样品从室温升温至指定温度后进行保温处理,然后随炉冷却至室温,获得耐腐蚀高熵合金薄膜。(3) The VAlTiCrCu high-entropy alloy thin film sample is heated from room temperature to a specified temperature and then subjected to heat preservation treatment, and then cooled to room temperature with the furnace to obtain a corrosion-resistant high-entropy alloy thin film.
实施例5Example 5
本实施例中,基体材料为304不锈钢,基体表面是VAlTiCrCu高熵合金薄膜。In this embodiment, the base material is 304 stainless steel, and the base surface is a VAlTiCrCu high-entropy alloy thin film.
该VAlTiCrCu高熵合金薄膜的制备方法如下:The preparation method of the VAlTiCrCu high-entropy alloy thin film is as follows:
采用磁控溅射技术,在基体表面制备VAlTiCrCu高熵合金薄膜,主要包括如下步骤:Using magnetron sputtering technology, the VAlTiCrCu high-entropy alloy thin film is prepared on the surface of the substrate, which mainly includes the following steps:
(1)选择原料纯度≥99.9%的等原子比的V50Al50靶材、等原子比的Ti50Cr50靶材、Cu靶材,在垂直方向按照V50Al50-Ti50Cr50-Cu的顺序自上而下依次层叠排列厚度分别为20mm、20mm、10mm的各靶材,此为一个靶周期;然后,在垂直方向包括5个所述靶周期,形成拼接复合靶。(1) Select V 50 Al 50 targets with an equal atomic ratio, Ti 50 Cr 50 targets and Cu targets with an equal atomic ratio of raw material purity ≥99.9%, in the vertical direction according to V 50 Al 50 -Ti 50 Cr 50 - Each target with thicknesses of 20mm, 20mm, and 10mm is stacked in the order of Cu from top to bottom, which is one target cycle; then, 5 target cycles are included in the vertical direction to form a spliced composite target.
(2)对基体表面进行机械磨抛处理,再依次用石油醚、丙酮和酒精进行超声清洗20min,之后用氮气吹干;此后,将基体放入磁控溅射腔体且与腔体中心的靶材表面平行。在沉积之前抽真空至真空度低于10-3Pa,利用Ar离子对复合靶轰击30min,并对基体样品进行离子刻蚀15min。(2) The surface of the substrate is subjected to mechanical grinding and polishing, and then ultrasonically cleaned with petroleum ether, acetone and alcohol for 20 minutes in turn, and then dried with nitrogen; The target surfaces are parallel. Vacuum was evacuated to less than 10 -3 Pa before deposition, the composite target was bombarded with Ar ions for 30 minutes, and the substrate sample was ion-etched for 15 minutes.
(3)反应腔体中充入流量200sccm的99.99wt.%的高纯氩气,磁控溅射步骤(1)中的拼接复合靶,在步骤(2)处理后的基体表面沉积4h,得到VAlTiCrCu高熵合金薄膜,溅射过程中,参数设置基体温度为30℃、溅射功率为3000W、基体偏压为-20V,反应腔体内压力为7×10-2mbar,制得VAlTiCrCu高熵合金薄膜。(3) The reaction chamber is filled with 99.99 wt.% high-purity argon gas with a flow rate of 200 sccm, and the spliced composite target in the magnetron sputtering step (1) is deposited on the surface of the substrate after the step (2) for 4 hours to obtain VAlTiCrCu high-entropy alloy thin film, during the sputtering process, the parameters set the substrate temperature to 30°C, the sputtering power to 3000W, the substrate bias to -20V, and the pressure in the reaction chamber to be 7×10 -2 mbar to prepare the VAlTiCrCu high-entropy alloy. film.
将磁控溅射得到的VAlTiCrCu高熵合金薄膜进行硬度、弹性模量及耐腐蚀性能的提升,具体步骤如下:The hardness, elastic modulus and corrosion resistance of the VAlTiCrCu high-entropy alloy film obtained by magnetron sputtering are improved, and the specific steps are as follows:
(1)将制备好的VAlTiCrCu高熵合金薄膜样品置于马弗炉中的石英管中抽至真空度10-3Pa以下;(1) The prepared VAlTiCrCu high-entropy alloy thin film sample is placed in a quartz tube in a muffle furnace and evacuated to a vacuum degree below 10 -3 Pa;
(2)采用马弗炉对样品进行退火处理,采用升温速率为8℃/min,控制退火温度为900℃,退火时间为3h,期间通入足量高纯氩气保护;(2) The sample was annealed with a muffle furnace, the heating rate was 8°C/min, the annealing temperature was controlled at 900°C, the annealing time was 3h, and a sufficient amount of high-purity argon was introduced during the protection;
(3)将所述VAlTiCrCu高熵合金薄膜样品从室温升温至指定温度后进行保温处理,然后随炉冷却至室温,获得耐腐蚀高熵合金薄膜。(3) The VAlTiCrCu high-entropy alloy thin film sample is heated from room temperature to a specified temperature and then subjected to heat preservation treatment, and then cooled to room temperature with the furnace to obtain a corrosion-resistant high-entropy alloy thin film.
对照例1Comparative Example 1
请参阅CN 110129731A,本对照例中,基体材料为不锈钢,基体表面是CoCrFeMnNi高熵合金薄膜。Please refer to CN 110129731A. In this comparative example, the base material is stainless steel, and the surface of the base body is a CoCrFeMnNi high-entropy alloy thin film.
该CoCrFeMnNi高熵合金薄膜的制备方法如下:The preparation method of the CoCrFeMnNi high-entropy alloy thin film is as follows:
采用磁控溅射技术,在基体表面制备CoCrFeMnNi高熵合金薄膜,主要包括如下步骤:Using magnetron sputtering technology, the CoCrFeMnNi high-entropy alloy thin film is prepared on the surface of the substrate, which mainly includes the following steps:
(1)以纯度为99.99%、经过1000℃保温、均质化处理48h后的高纯Co20Cr20Fe20Mn20Ni20(at%)合金作为靶材。(1) A high-purity Co 20 Cr 20 Fe 20 Mn 20 Ni 20 (at%) alloy with a purity of 99.99%, heat preservation at 1000° C. and homogenization treatment for 48 hours was used as the target material.
(2)对基体表面进行抛光处理,再依次用丙酮、酒精和去离子水进行超声清洗15min去除其表面的杂质和污垢,将基体固定在圆形挡心板送入进样室,抽真空至真空度≤5×10-5Pa;利用Ar离子对靶材预溅射30min。(2) Polish the surface of the substrate, and then perform ultrasonic cleaning with acetone, alcohol and deionized water for 15 minutes in turn to remove impurities and dirt on the surface, fix the substrate on the circular baffle and send it into the sampling chamber, and vacuum until Vacuum degree ≤ 5×10 -5 Pa; use Ar ions to pre-sputter the target for 30 minutes.
(3)使进样室真空度≤2.5×10-6Pa,将样品送入溅射腔内。使反应腔体中真空度≤2.5×10-6Pa后,充入流量20sccm的氩气,在基体表面沉积30min,得到CoCrFeMnNi高熵合金薄膜,溅射过程中,参数设置溅射功率为150W。(3) The vacuum degree of the sample injection chamber is ≤2.5×10 -6 Pa, and the sample is sent into the sputtering chamber. After the vacuum degree in the reaction chamber was ≤2.5×10 -6 Pa, argon gas with a flow rate of 20sccm was charged, and deposited on the surface of the substrate for 30min to obtain a CoCrFeMnNi high-entropy alloy thin film. During the sputtering process, the sputtering power was set to 150W.
(4)后进行液氮深冷处理10次,得到的CoCrFeMnNi高熵合金薄膜硬度9.1GPa,弹性模量152GPa。(4) After 10 times of liquid nitrogen cryogenic treatment, the obtained CoCrFeMnNi high-entropy alloy film has a hardness of 9.1 GPa and an elastic modulus of 152 GPa.
本对照例中高熵合金靶多为一体成型的靶材,靶材种类及成分均不易调控,而本发明中的高熵合金靶材不仅种类、成分易调控,且性能优异。Most of the high-entropy alloy targets in this comparative example are integrally formed targets, and the type and composition of the target are not easy to control, while the high-entropy alloy target in the present invention is not only easy to control the type and composition, but also has excellent performance.
对照例2Comparative Example 2
本对照例与实施例1基本一致,不同之处在于,退火温度采用400℃。This comparative example is basically the same as that of Example 1, except that the annealing temperature is 400°C.
经检测,本对照例中制得的VAlTiCrCu高熵合金薄膜在退火处理前后其结构为单相BCC结构。本对照例制得的VAlTiCrCu高熵合金薄膜样品的元素成分含量如表4所示:After testing, the structure of the VAlTiCrCu high-entropy alloy thin film prepared in this control example is a single-phase BCC structure before and after the annealing treatment. The element content of the VAlTiCrCu high-entropy alloy thin film sample prepared in this comparative example is shown in Table 4:
表4:对照例2中VAlTiCrCu高熵合金薄膜元素成分含量Table 4: Elemental composition content of VAlTiCrCu high-entropy alloy thin film in Comparative Example 2
从表4可以看出,该VAlTiCrCu高熵合金薄膜样品中各元素的原子百分含量均满足高熵合金中元素的原子百分含量为5%~35%的要求。It can be seen from Table 4 that the atomic percentage content of each element in the VAlTiCrCu high-entropy alloy thin film sample meets the requirement that the atomic percentage content of the elements in the high-entropy alloy is 5% to 35%.
通过纳米压痕设备对本对照例中退火后的薄膜样品表面压入六个深度均为200nm的点,测量硬度和弹性模量,测量结果如下表5所示。Six points with a depth of 200 nm were pressed into the surface of the annealed film sample in this comparative example by a nano-indentation device, and the hardness and elastic modulus were measured. The measurement results are shown in Table 5 below.
表5:VAlTiCrCu高熵合金薄膜退火前后的硬度及弹性模量Table 5: Hardness and elastic modulus of VAlTiCrCu high-entropy alloy films before and after annealing
从表5可以看出,经400℃退火后VAlTiCrCu高熵合金薄膜样品的硬度及弹性模量降低了20%~30%。It can be seen from Table 5 that the hardness and elastic modulus of the VAlTiCrCu high-entropy alloy thin film samples decreased by 20% to 30% after annealing at 400 °C.
对本对照例中退火前后的VAlTiCrCu耐腐蚀高熵合金薄膜样品进行电化学测试,其自腐蚀电位和自腐蚀电流密度的具体数值如下表6所示。Electrochemical tests were performed on the VAlTiCrCu corrosion-resistant high-entropy alloy thin film samples before and after annealing in this comparative example, and the specific values of the self-corrosion potential and self-corrosion current density are shown in Table 6 below.
表6:VAlTiCrCu高熵合金薄膜退火前后的自腐蚀电位和自腐蚀电流密度Table 6: Self-corrosion potential and self-corrosion current density of VAlTiCrCu high-entropy alloy films before and after annealing
从表6中可以看出,VAlTiCrCu高熵合金薄膜在经400℃退火处理后其耐腐蚀性能小幅下降。It can be seen from Table 6 that the corrosion resistance of the VAlTiCrCu high-entropy alloy film decreased slightly after being annealed at 400 °C.
本发明的各方面、实施例、特征及实例应视为在所有方面为说明性的且不打算限制本发明,本发明的范围仅由权利要求书界定。在不背离所主张的本发明的精神及范围的情况下,所属领域的技术人员将明了其它实施例、修改及使用。The aspects, embodiments, features, and examples of the present invention are to be considered in all respects illustrative and not intended to limit the invention, the scope of which is defined only by the claims. Other embodiments, modifications, and uses will be apparent to those skilled in the art without departing from the spirit and scope of the claimed invention.
在本发明案中标题及章节的使用不意味着限制本发明;每一章节可应用于本发明的任何方面、实施例或特征。The use of headings and sections in this application is not meant to limit the invention; each section is applicable to any aspect, embodiment or feature of the invention.
在本发明案通篇中,在将组合物描述为具有、包含或包括特定组份之处或者在将过程描述为具有、包含或包括特定过程步骤之处,预期本发明教示的组合物也基本上由所叙述组份组成或由所叙述组份组成,且本发明教示的过程也基本上由所叙述过程步骤组成或由所叙述过程步骤组组成。Throughout this specification, where a composition is described as having, comprising or including particular components, or where a process is described as having, comprising or including particular process steps, it is contemplated that the compositions of the present teachings will also be substantially The above consists of or consists of the recited components, and the processes taught herein also consist essentially of, or consist of, the recited process steps.
除非另外具体陈述,否则术语“包含(include、includes、including)”、“具有(have、has或having)”的使用通常应理解为开放式的且不具限制性。The use of the terms "include, includes, including," "have, has, or having" should generally be understood to be open-ended and not limiting unless specifically stated otherwise.
应理解,各步骤的次序或执行特定动作的次序并非十分重要,只要本发明教示保持可操作即可。此外,可同时进行两个或两个以上步骤或动作。It should be understood that the order of the steps or the order in which the particular actions are performed is not critical so long as the present teachings remain operable. Furthermore, two or more steps or actions may be performed simultaneously.
此外,本案发明人还参照前述实施例,以本说明书述及的其它原料、工艺操作、工艺条件进行了试验,并均获得了较为理想的结果。In addition, the inventors of the present application also carried out experiments with other raw materials, technological operations and technological conditions mentioned in this specification with reference to the foregoing examples, and all obtained satisfactory results.
尽管已参考说明性实施例描述了本发明,但所属领域的技术人员将理解,在不背离本发明的精神及范围的情况下可做出各种其它改变、省略及/或添加且可用实质等效物替代所述实施例的元件。另外,可在不背离本发明的范围的情况下做出许多修改以使特定情形或材料适应本发明的教示。因此,本文并不打算将本发明限制于用于执行本发明的所揭示特定实施例,而是打算使本发明将包含归属于所附权利要求书的范围内的所有实施例。此外,除非具体陈述,否则术语第一、第二等的任何使用不表示任何次序或重要性,而是使用术语第一、第二等来区分一个元素与另一元素。Although the present invention has been described with reference to illustrative embodiments, those skilled in the art will understand that various other changes, omissions and/or additions and the like may be made without departing from the spirit and scope of the invention Effects replace elements of the described embodiments. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from its scope. Therefore, it is not intended herein to limit the invention to the particular embodiments disclosed for carrying out the invention, but it is intended that this invention include all embodiments falling within the scope of the appended claims. Furthermore, unless specifically stated, any use of the terms first, second, etc. does not denote any order or importance, but rather the terms first, second, etc. are used to distinguish one element from another.
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