CN111403315B - Wafer trimming device and method - Google Patents
Wafer trimming device and method Download PDFInfo
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- CN111403315B CN111403315B CN202010141588.8A CN202010141588A CN111403315B CN 111403315 B CN111403315 B CN 111403315B CN 202010141588 A CN202010141588 A CN 202010141588A CN 111403315 B CN111403315 B CN 111403315B
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- 238000009966 trimming Methods 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000012937 correction Methods 0.000 claims abstract description 14
- 238000005299 abrasion Methods 0.000 claims abstract description 9
- 238000003384 imaging method Methods 0.000 claims description 18
- 235000012431 wafers Nutrition 0.000 abstract description 133
- 238000010586 diagram Methods 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 238000012544 monitoring process Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/026—Wafer-level processing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/199—Back-illuminated image sensors
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Abstract
The invention discloses a wafer edge cutting device, which comprises: a wafer placement platform; the cutter head is of a circular ring structure, and the surface of the outer ring of the circular ring structure is a cutting surface; in the side view direction facing the cutting surface, the side surface of the cutter head is of a polygonal structure formed by splicing a first rectangle and a second rectangle; the length of the first rectangle is less than or equal to that of the second rectangle; during cutting, the length side of the first rectangle is vertical to the first surface of the wafer, and the width side of the bottom of the first rectangle is contacted with the wafer; the real-time measuring device is used for measuring the length of the first rectangle of the cutter head in real time; and the cutting depth correction device is used for automatically correcting the cutting depth according to the length of the first rectangle measured in real time and the distance between the central axis of the tool bit and the surface of the wafer. The invention also discloses a wafer trimming method. The invention can measure the abrasion of the cutter head in real time and automatically correct the cutting depth, thereby improving the trimming quality and the uniformity of the trimming depth among different wafers.
Description
Technical Field
The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a wafer edge cutting device. The invention also relates to a wafer trimming method.
Background
A trimming (Trim) process is an important process in a backside illumination (BSI) process, such as a BSI image sensor process, in which a circle of a wafer 2(wafer) having a specific depth and width is cut by the tool tip 1. As shown in fig. 1A, it is a three-dimensional structure diagram of a tool bit 1 in the existing wafer 2 trimming method; the tool bit 1 is in a circular structure along the direction of a central shaft; wherein the side corresponding to the outermost ring is the cutting surface 1a, but only a part of the thickness of the cutting surface 1a is used for cutting. Fig. 1B is a schematic structural diagram of a tool tip 1 and a wafer 2 during trimming by a conventional wafer 2 trimming method; it can be seen that the side view of the tool tip 1 corresponds to the side view of the cutting surface 1a, and that the tool tip 1 in fig. 1B is an original structure that has not yet been cut and thus has not worn away, and that the tool tip 1 will cut the wafer 2 in the area indicated by the dashed circle 101. As shown in fig. 1C, which is a structure diagram of an edge of the wafer 2 after trimming by the conventional wafer 2 trimming method, it can be seen that the silicon material of the wafer 2 is cut in an edge region corresponding to the dashed circle 102.
Since the trimming is performed by the blade 1 rubbing the wafer 2, the blade 1 wears at a position where the blade 1 contacts the wafer 2 as the trimming progresses, and after the wear, the radius of the contact area between the blade 1 and the wafer 2 decreases, and the depth that can be cut by the blade 1 also decreases, that is, when the distance between the central axis AA of the blade 1 and the surface of the wafer 2 is not changed, the depth that can be cut by the blade 1 after the wear becomes shallow.
In order to prevent the cutting depth from being affected by the wear of the cutting tip 1, in the conventional method, the wear amount of the cutting tip 1 is monitored by a Chip Cut Setup (CCS) process, and as shown in fig. 2A, the method is a schematic three-dimensional structure diagram during CCS cutting in the conventional wafer trimming method; CCS is the cut-off of a specific depth at a specific position on the silicon wafer 201 for monitoring with the tool tip 1, fig. 2B is a left side view corresponding to fig. 2A, in fig. 2B, the cutting depth d of the tool tip 1 is illustrated, and the height of the tool tip 1 is also illustrated, the height of the tool tip 1 being indicated by the distance Z0 between the central axis AA and the top structure 202 of the trimming device. As shown in fig. 2B, when the diameter or radius of the cutting surface 1a of the tool tip 1 for cutting the silicon wafer 201 is uniform, the width of the groove to be cut is related to the radius of the cutting surface, that is, the radius of the cutting surface 1a can be obtained by the width of the groove to be cut. As shown in fig. 2C, it is a schematic view of fig. 2A showing the wafer after being cut and then measuring the cutting length; the mark 203 corresponds to the groove formed by cutting, and the corresponding cutting depth d can be obtained by the corresponding length L0 on the groove 203.
Since the spacing between the silicon wafer 201 and the top structure 202 is not the same as the spacing between the actually trimmed wafer 2 and the top structure 202 in CCS monitoring, the cutting depth D formed on the silicon wafer 201 needs to be corrected to obtain the accurate cutting depth on the wafer 2, as shown in fig. 2D, the method is a structural diagram of the CCS in the conventional wafer trimming method for correcting and measuring the cutting depth, the correction distance is H0-Ha, the distance H0 is the spacing between the silicon wafer 201 and the top structure 202 measured by the distance sensor 204, and the distance Ha is the spacing between the wafer 2 and the top structure 202. Since H0 is greater than Ha, the surface of silicon wafer 201 is lower than the surface of wafer 2, so that the depth of the groove formed on wafer 2 is greater than the depth H0-Ha formed on silicon wafer 201, i.e., the cutting depth on wafer 2 needs to be increased by the correction distance based on d (H0-Ha).
In the existing method, because the CCS monitoring needs to adopt an additional silicon wafer 201 and perform corresponding tests, the test time and the cost are high, so the existing method cannot perform the CCS monitoring after trimming of each wafer 2 is completed. That is, the trimming of the plurality of wafers 2 can be performed between the monitoring of the CCS for the next monitoring, and in the trimming process of the wafers 2, each wafer 2 can generate certain abrasion to the cutting surface 1a corresponding to the tool bit 1 after the trimming is completed, so that the cutting depth of the following wafer 2 can be continuously reduced along with the continuous trimming, and the cutting depth of the following wafer 2 can not meet the requirement.
Disclosure of Invention
The invention aims to solve the technical problem of providing a wafer trimming device which can measure the abrasion of a tool bit in real time and automatically correct the cutting depth, thereby improving the trimming quality and the uniformity of the trimming depth among different wafers. Therefore, the invention also provides a wafer trimming method.
In order to solve the above technical problem, the wafer edge trimming apparatus provided by the present invention comprises:
the wafer placing platform is used for placing a wafer.
The cutter head is in a circular ring structure along the direction of the central shaft, and the surface of the outer ring of the circular ring structure is a cutting surface.
In the side view direction facing the cutting surface, the side surface of the cutter head is of a polygonal structure formed by splicing a first rectangle and a second rectangle; the length of the first rectangle is less than or equal to the length of the second rectangle; the sum of the width of the first rectangle and the width of the second rectangle is equal to the thickness of the cutter head; during cutting, the length side of the first rectangle is vertical to the first surface of the wafer, and the width side of the bottom of the first rectangle is in contact with the wafer; the length of the first rectangle is the diameter of the tool bit for actually cutting the wafer, and the tool bit can generate abrasion and reduce the length of the first rectangle along with the increase of cutting time; the length of the second rectangle is the initial diameter of the cutter head.
And the real-time measuring device is used for measuring the length of the first rectangle of the tool bit in real time.
And the cutting depth correction device is used for automatically correcting the cutting depth according to the length of the first rectangle measured by the real-time measuring device and the distance between the central axis of the tool bit and the surface of the wafer.
In a further refinement, the real-time measuring device comprises a light source and an imaging device.
The light source and the imaging device are respectively arranged on two sides of the tool bit along the central axis direction, parallel light emitted by the light source vertically irradiates the corresponding side surface of the tool bit from a first side, and the range of the parallel light is larger than the initial diameter of the tool bit; the imaging device receives light from the light source from a second side and forms a side image of the tool bit, and the length of the first rectangle is obtained from the side image of the tool bit.
The further improvement is that the real-time measuring device is connected with a computer, the side image of the cutter head is sent to the computer in real time, and the computer is used for measuring the length of the first rectangle on the side image of the cutter head.
In a further improvement, the real-time measuring device measures the length of the first rectangle of the tool bit after the trimming of each wafer is completed.
In a further improvement, the cutting depth correction device is implemented by the computer.
In a further improvement, the distance between the central axis of the tool head and the surface of the wafer is adjusted by adjusting the height of the central axis; or the distance between the central axis of the tool bit and the surface of the wafer is adjusted by adjusting the height of the wafer placing platform; or the distance between the central shaft of the tool bit and the surface of the wafer is adjusted by adjusting the height of the central shaft and the height of the wafer placing platform.
In order to solve the technical problem, the wafer trimming method provided by the invention comprises the following steps:
firstly, a wafer is placed on a wafer placing platform.
And step two, trimming the wafer by adopting a tool bit.
The cutter head is of a circular ring structure in the direction along the central shaft, and the surface of the outer ring of the circular ring structure is a cutting surface; in the side view direction facing the cutting surface, the side surface of the cutter head is of a polygonal structure formed by splicing a first rectangle and a second rectangle; the length of the first rectangle is less than or equal to the length of the second rectangle; the sum of the width of the first rectangle and the width of the second rectangle is equal to the thickness of the cutter head; during cutting, the length side of the first rectangle is vertical to the first surface of the wafer, and the width side of the bottom of the first rectangle is in contact with the wafer; the length of the first rectangle is the diameter of the tool bit for actually cutting the wafer, and the tool bit can generate abrasion and reduce the length of the first rectangle along with the increase of cutting time; the length of the second rectangle is the initial diameter of the cutter head.
And step three, in the process of trimming each wafer or after trimming each wafer is finished, measuring the length of the first rectangle of the tool bit in real time by using a real-time measuring device.
And fourthly, automatically correcting the cutting depth by adopting a cutting depth correction device according to the length of the first rectangle measured by the real-time measuring device and the distance between the central axis of the tool bit and the surface of the wafer.
In a further refinement, the real-time measuring device comprises a light source and an imaging device.
The light source and the imaging device are respectively arranged on two sides of the tool bit along the central axis direction, parallel light emitted by the light source vertically irradiates the corresponding side surface of the tool bit from a first side, and the range of the parallel light is larger than the initial diameter of the tool bit; the imaging device receives light from the light source from a second side and forms a side image of the tool bit, and the length of the first rectangle is obtained from the side image of the tool bit.
The further improvement is that the real-time measuring device is connected with a computer, the side image of the cutter head is sent to the computer in real time, and the computer is used for measuring the length of the first rectangle on the side image of the cutter head.
In a further improvement, the cutting depth correction device is implemented by the computer.
In a further improvement, the distance between the central axis of the tool head and the surface of the wafer is adjusted by adjusting the height of the central axis; or the distance between the central axis of the tool bit and the surface of the wafer is adjusted by adjusting the height of the wafer placing platform; or the distance between the central shaft of the tool bit and the surface of the wafer is adjusted by adjusting the height of the central shaft and the height of the wafer placing platform.
The invention measures the diameter of the cutter head which actually cuts the wafer, namely the diameter of the cutting surface which is contacted with the wafer by arranging the real-time measuring device in the wafer cutting device, and can automatically correct the cutting depth through the cutting depth correcting device when the diameter of the cutting surface is reduced due to abrasion.
Drawings
The invention is described in further detail below with reference to the following figures and detailed description:
FIG. 1A is a perspective view of a tool tip used in a conventional wafer trimming method;
FIG. 1B is a schematic view of a conventional wafer trimming method for trimming a wafer with a tool tip and a wafer;
FIG. 1C is a schematic diagram of a wafer edge structure after trimming by a conventional wafer trimming method;
FIG. 2A is a schematic diagram of a CCS cutting perspective structure of a conventional wafer trimming method;
FIG. 2B is a left side view of FIG. 2A;
FIG. 2C is a schematic view of the wafer cut of FIG. 2A after the cut length measurement;
FIG. 2D is a schematic diagram of a depth of cut calibration measurement of a CCS of a prior art wafer trimming method;
FIG. 3 is a schematic structural diagram of a real-time measuring device of a wafer trimming apparatus according to an embodiment of the present invention;
FIG. 4A is a schematic diagram of a side view of a tool tip in an initial state of a wafer trimming method according to an embodiment of the invention;
fig. 4B is a structural diagram of a side view of a cutting surface of a cutting head worn by the cutting head in the wafer trimming method according to an embodiment of the invention.
Detailed Description
Fig. 3 is a schematic structural diagram of a real-time measuring device of a wafer trimming apparatus according to an embodiment of the present invention; fig. 4A is a structural diagram of a side view of the tool tip 1 in an initial state facing the cutting surface 1a in the wafer trimming method according to the embodiment of the invention; fig. 4B is a schematic diagram of a side view of the cutting edge 1a facing the cutting surface after the cutting tip 1 is worn in the wafer trimming method according to the embodiment of the present invention. In the embodiment of the present invention, a three-dimensional structure diagram of the tool tip 1 is also shown in fig. 1A, a schematic structure diagram of the tool tip 1 and the wafer 2 during trimming is also shown in fig. 1B, and a structure diagram of an edge of the wafer 2 after trimming is also shown in fig. 1C. The wafer edge cutting device provided by the embodiment of the invention comprises:
and the wafer placing platform is used for placing the wafer 2.
The first surface of the wafer 2 may be a back surface or a front surface. The wafer 2 is a silicon wafer.
The cutter head 1 is in a circular ring structure along the direction of a central axis AA, and the outer ring surface of the circular ring structure is a cutting surface 1 a.
In a side view direction facing the cutting surface 1a, the side surface of the cutter head 1 is in a polygonal structure formed by splicing a first rectangle 1b and a second rectangle 1 c; the length of the first rectangle 1b is less than or equal to the length of the second rectangle 1 c; the sum of the width of the first rectangle 1b and the width of the second rectangle 1c is equal to the thickness of the tool bit 1; during cutting, the length side of the first rectangle 1b is vertical to the first surface of the wafer 2, and the width side of the bottom of the first rectangle 1b is contacted with the wafer 2; the length of the first rectangle 1b is the diameter of the tool bit 1 actually cutting the wafer 2, and the tool bit 1 will wear and reduce the length of the first rectangle 1b as the cutting time increases; the length of the second rectangle 1c is the initial diameter of the cutting head 1.
And the real-time measuring device is used for measuring the length of the first rectangle 1b of the tool bit 1 in real time.
And the cutting depth correcting device is used for automatically correcting the cutting depth according to the length of the first rectangle 1b measured by the real-time measuring device and the distance between the central axis AA of the tool bit 1 and the surface of the wafer 2.
As shown in fig. 3, the real-time measuring device includes a light source 301 and an imaging device 302.
The light source 301 and the imaging device 302 are respectively arranged on two sides of the tool bit 1 along the central axis AA, parallel light 303 emitted by the light source 301 vertically irradiates the corresponding side surface of the tool bit 1 from a first side, and the range of the parallel light 303 is larger than the initial diameter of the tool bit 1; the imaging device 302 receives the light from the light source 301 from the second side and forms a side image of the tool bit 1, and the length of the first rectangle 1b is obtained from the side image of the tool bit 1.
In the embodiment of the present invention, the real-time measuring device is connected to a computer 304, the side image of the tool bit 1 is sent to the computer 304 in real time, and the computer 304 measures the length of the first rectangle 1b on the side image of the tool bit 1.
In the embodiment of the present invention, the real-time measuring device measures the length of the first rectangle 1b of the tool bit 1 after the trimming of each wafer 2 is completed. In other embodiments, the length of the first rectangle 1b of the tool tip 1 can also be measured during the trimming of the wafer 2.
The cutting depth correction device is implemented by the computer 304.
The distance between the central axis AA of the tool bit 1 and the surface of the wafer 2 is adjusted by adjusting the height of the central axis AA; or, the distance between the central axis AA of the tool head 1 and the surface of the wafer 2 is adjusted by adjusting the height of the wafer placing platform; or, the distance between the central axis AA of the tool head 1 and the surface of the wafer 2 is adjusted by adjusting the height of the central axis AA and the height of the wafer placing platform.
In the embodiment of the invention, the real-time measuring device is arranged in the wafer 2 cutting device to measure the diameter of the tool bit 1 actually cutting the wafer 2, namely the diameter of the cutting surface 1a contacted with the wafer 2, and when the diameter of the cutting surface 1a is reduced due to abrasion, the cutting depth can be automatically corrected through the cutting depth correcting device.
The wafer trimming method provided by the embodiment of the invention comprises the following steps:
step one, the wafer 2 is placed on a wafer placing platform.
The first surface of the wafer 2 may be a back surface or a front surface.
And step two, trimming the wafer 2 by adopting the tool bit 1.
The cutter head 1 is in a circular ring structure along the direction of a central axis AA, and the outer ring surface of the circular ring structure is a cutting surface 1 a; in a side view direction facing the cutting surface 1a, the side surface of the cutter head 1 is in a polygonal structure formed by splicing a first rectangle 1b and a second rectangle 1 c; the length of the first rectangle 1b is less than or equal to the length of the second rectangle 1 c; the sum of the width of the first rectangle 1b and the width of the second rectangle 1c is equal to the thickness of the tool bit 1; during cutting, the length side of the first rectangle 1b is vertical to the first surface of the wafer 2, and the width side of the bottom of the first rectangle 1b is contacted with the wafer 2; the length of the first rectangle 1b is the diameter of the tool bit 1 actually cutting the wafer 2, and the tool bit 1 will wear and reduce the length of the first rectangle 1b as the cutting time increases; the length of the second rectangle 1c is the initial diameter of the cutting head 1.
And step three, in the trimming process of each wafer 2 or after trimming of each wafer 2 is finished, measuring the length of the first rectangle 1b of the tool bit 1 in real time by using a real-time measuring device.
In the method of the embodiment of the present invention, the real-time measuring device includes a light source 301 and an imaging device 302.
The light source 301 and the imaging device 302 are respectively arranged on two sides of the tool bit 1 along the central axis AA, parallel light 303 emitted by the light source 301 vertically irradiates the corresponding side surface of the tool bit 1 from a first side, and the range of the parallel light 303 is larger than the initial diameter of the tool bit 1; the imaging device 302 receives the light from the light source 301 from the second side and forms a side image of the tool bit 1, and the length of the first rectangle 1b is obtained from the side image of the tool bit 1.
The real-time measuring device is connected with a computer 304, the side image of the cutter head 1 is sent to the computer 304 in real time, and the computer 304 measures the length of the first rectangle 1b on the side image of the cutter head 1.
And fourthly, automatically correcting the cutting depth by using a cutting depth correction device according to the length of the first rectangle 1b measured by the real-time measuring device and the distance between the central axis AA of the tool bit 1 and the surface of the wafer 2.
The cutting depth correction device is implemented by the computer 304.
The distance between the central axis AA of the tool bit 1 and the surface of the wafer 2 is adjusted by adjusting the height of the central axis AA; or, the distance between the central axis AA of the tool head 1 and the surface of the wafer 2 is adjusted by adjusting the height of the wafer placing platform; or, the distance between the central axis AA of the tool head 1 and the surface of the wafer 2 is adjusted by adjusting the height of the central axis AA and the height of the wafer placing platform.
The present invention has been described in detail with reference to the specific embodiments, but these should not be construed as limitations of the present invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.
Claims (11)
1. A wafer edge trimming apparatus, comprising:
the wafer placing platform is used for placing a wafer;
the cutter head is of a circular structure along the direction of the central shaft, and the surface of the outer ring of the circular structure is a cutting surface;
in the side view direction facing the cutting surface, the side surface of the cutter head is of a polygonal structure formed by splicing a first rectangle and a second rectangle; the length of the first rectangle is less than or equal to the length of the second rectangle; the sum of the width of the first rectangle and the width of the second rectangle is equal to the thickness of the cutter head; during cutting, the length side of the first rectangle is vertical to the first surface of the wafer, and the width side of the bottom of the first rectangle is in contact with the wafer; the length of the first rectangle is the diameter of the tool bit for actually cutting the wafer, and the tool bit can generate abrasion and reduce the length of the first rectangle along with the increase of cutting time; the length of the second rectangle is the initial diameter of the cutter head;
the real-time measuring device is used for measuring the length of the first rectangle of the cutter head in real time;
and the cutting depth correction device is used for automatically correcting the cutting depth according to the length of the first rectangle measured by the real-time measuring device and the distance between the central axis of the tool bit and the surface of the wafer.
2. The wafer trimming apparatus according to claim 1, wherein: the real-time measuring device comprises a light source and an imaging device;
the light source and the imaging device are respectively arranged on two sides of the tool bit along the central axis direction, parallel light emitted by the light source vertically irradiates the corresponding side surface of the tool bit from a first side, and the range of the parallel light is larger than the initial diameter of the tool bit; the imaging device receives light from the light source from a second side and forms a side image of the tool bit, and the length of the first rectangle is obtained from the side image of the tool bit.
3. The wafer trimming apparatus according to claim 2, wherein: the real-time measuring device is connected with a computer, the side image of the cutter head is sent to the computer in real time, and the length of a first rectangle on the side image of the cutter head is measured through the computer.
4. The wafer trimming apparatus according to claim 3, wherein: the real-time measuring device measures the length of the first rectangle of the tool bit after the trimming of each wafer is completed.
5. The wafer trimming apparatus according to claim 3, wherein: the cutting depth correction device is realized by the computer.
6. The wafer trimming apparatus according to claim 5, wherein: the distance between the central shaft of the tool bit and the surface of the wafer is adjusted by adjusting the height of the central shaft; or the distance between the central axis of the tool bit and the surface of the wafer is adjusted by adjusting the height of the wafer placing platform; or the distance between the central shaft of the tool bit and the surface of the wafer is adjusted by adjusting the height of the central shaft and the height of the wafer placing platform.
7. A wafer trimming method is characterized by comprising the following steps:
firstly, placing a wafer on a wafer placing platform;
step two, trimming the wafer by adopting a tool bit;
the cutter head is in a circular ring structure along the direction of the central shaft, and the surface of the outer ring of the circular ring structure is a cutting surface; in the side view direction facing the cutting surface, the side surface of the cutter head is of a polygonal structure formed by splicing a first rectangle and a second rectangle; the length of the first rectangle is less than or equal to the length of the second rectangle; the sum of the width of the first rectangle and the width of the second rectangle is equal to the thickness of the cutter head; during cutting, the length side of the first rectangle is vertical to the first surface of the wafer, and the width side of the bottom of the first rectangle is in contact with the wafer; the length of the first rectangle is the diameter of the tool bit for actually cutting the wafer, and the tool bit can generate abrasion and reduce the length of the first rectangle along with the increase of cutting time; the length of the second rectangle is the initial diameter of the cutter head;
step three, in the process of trimming each wafer or after trimming each wafer is finished, measuring the length of the first rectangle of the tool bit in real time by using a real-time measuring device;
and fourthly, automatically correcting the cutting depth by adopting a cutting depth correction device according to the length of the first rectangle measured by the real-time measuring device and the distance between the central axis of the tool bit and the surface of the wafer.
8. The wafer trimming method of claim 7, wherein: the real-time measuring device comprises a light source and an imaging device;
the light source and the imaging device are respectively arranged on two sides of the tool bit along the central axis direction, parallel light emitted by the light source vertically irradiates the corresponding side surface of the tool bit from a first side, and the range of the parallel light is larger than the initial diameter of the tool bit; the imaging device receives light from the light source from a second side and forms a side image of the tool bit, and the length of the first rectangle is obtained from the side image of the tool bit.
9. The wafer trimming method of claim 8, wherein: the real-time measuring device is connected with a computer, the side image of the cutter head is sent to the computer in real time, and the length of a first rectangle on the side image of the cutter head is measured through the computer.
10. The wafer trimming method of claim 9, wherein: the cutting depth correction device is realized by the computer.
11. The wafer trimming method of claim 10, wherein: the distance between the central shaft of the tool bit and the surface of the wafer is adjusted by adjusting the height of the central shaft; or the distance between the central axis of the tool bit and the surface of the wafer is adjusted by adjusting the height of the wafer placing platform; or the distance between the central shaft of the tool bit and the surface of the wafer is adjusted by adjusting the height of the central shaft and the height of the wafer placing platform.
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| CN114102883A (en) * | 2021-09-29 | 2022-03-01 | 上海华力集成电路制造有限公司 | Wafer trimming control device, control method and readable storage medium |
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