CN111293070A - Bipolar electrostatic suction head of miniature light-emitting diode and array thereof - Google Patents
Bipolar electrostatic suction head of miniature light-emitting diode and array thereof Download PDFInfo
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- CN111293070A CN111293070A CN202010127004.1A CN202010127004A CN111293070A CN 111293070 A CN111293070 A CN 111293070A CN 202010127004 A CN202010127004 A CN 202010127004A CN 111293070 A CN111293070 A CN 111293070A
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- 239000000758 substrate Substances 0.000 claims description 26
- 239000011651 chromium Substances 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000012858 resilient material Substances 0.000 claims description 2
- 238000012546 transfer Methods 0.000 abstract description 30
- 238000001179 sorption measurement Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 32
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000004205 dimethyl polysiloxane Substances 0.000 description 3
- 239000013013 elastic material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000010023 transfer printing Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000011345 viscous material Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- -1 polydimethylsiloxane Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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Abstract
The invention provides a micro light-emitting diode bipolar electrostatic suction head and an array thereof, wherein the bipolar electrostatic suction head comprises a first electrode which is circular and is not completely closed, a second electrode which is circular and is positioned in the first electrode, a gap positioned between the first electrode and the second electrode, a first dielectric layer filled in the gap, a first electrode connecting wire connected with the first electrode, a second electrode connecting wire connected with the second electrode and a second dielectric layer, wherein the second dielectric layer covers the first electrode, the second electrode, the first dielectric layer, the first electrode connecting wire and the second electrode connecting wire, and the first electrode and the second electrode simultaneously adsorb one micro light-emitting diode. The invention adopts the bipolar electrostatic suction head and utilizes the electrostatic adsorption force to carry out mass transfer on the micro light-emitting diode, and simplifies the connecting structure of the electrostatic suction head and the electrostatic generator, thereby reducing the gap (gap) between the suction head and the surface of the micro light-emitting diode and carrying out high-efficiency transfer on the micro device by utilizing the electrostatic suction head.
Description
Technical Field
The invention relates to the technical field of miniature light-emitting diodes, in particular to a bipolar electrostatic suction head of a miniature light-emitting diode and an array thereof.
Background
The transfer and packaging of Micro devices such as Micro LEDs and MEMS have been important factors that restrict the mass commercial use of Micro devices, and at present, van der waals forces are often used for the transfer of Micro devices, such as transfer printing technology (transfer printing), which generally requires coating a material with certain viscosity, such as PDMS, on a transfer head, and applying a large external force, such as vacuum bonding, gravity extrusion, etc., to ensure that the viscous material on the transfer head is in contact with the Micro devices during the transfer, so that the surfaces of the Micro devices are left with a large amount of residual viscous material after being placed on a driving back plate, thereby adversely affecting the electrical properties of the Micro devices.
When the static adsorption force generated by static opposite charges is utilized to transfer the micro device, the surface of the micro device is not polluted, and in addition, the static releasing speed is high, so that the transfer efficiency is greatly improved.
Disclosure of Invention
The invention aims to provide a micro light-emitting diode bipolar electrostatic suction head and an array thereof, which can increase the electrostatic suction force and simplify the connection between the electrostatic suction head and an electrostatic generator.
The invention provides a micro light-emitting diode bipolar electrostatic suction head which comprises a first electrode which is circular and is not completely closed, a second electrode which is circular and is positioned in the first electrode, a gap positioned between the first electrode and the second electrode, a first dielectric layer filled in the gap, a first electrode connecting wire connected with the first electrode, a second electrode connecting wire connected with the second electrode and a second dielectric layer, wherein the second dielectric layer covers the first electrode, the second electrode, the first dielectric layer, the first electrode connecting wire and the second electrode connecting wire, and the first electrode and the second electrode simultaneously adsorb one micro light-emitting diode.
Preferably, the second electrode connecting line extends from the incompletely closed position of the first electrode, and the extending direction of the first electrode connecting line is opposite to the extending direction of the second electrode connecting line.
Preferably, the thickness of the first dielectric layer is not less than the thickness of the first electrode and the second electrode.
Preferably, the thickness of the second dielectric layer is not less than
Preferably, the first electrode and the second electrode are both made of a chromium and gold composite layer or titanium or aluminum.
The invention also provides a micro light-emitting diode bipolar electrostatic attraction head array which comprises bipolar electrostatic attraction heads arranged in M rows and N columns, a first contact electrode, a second contact electrode, a plurality of first connecting wires connected with the first contact electrode, a plurality of second connecting wires connected with the second contact electrode, a plurality of electrode lead holes arranged in the first contact electrode and the second contact electrode, a first terminal attached to the first contact electrode and connected through the electrode lead holes, and a second terminal attached to the second contact electrode and connected through the electrode lead holes, wherein the first connecting wires and the second connecting wires are connected with the first electrode connecting wires and the second electrode connecting wires of each row of bipolar electrostatic attraction heads respectively in an alternating mode.
Preferably, a first voltage source connected to the first terminal and a second voltage source connected to the second terminal are further included.
Preferably, the array of micro light emitting diode bipolar electrostatic chuck is located on the transfer substrate, the second terminal, the first voltage source, the second terminal and the second voltage source are all arranged on the back surface of the transfer substrate, and the bipolar electrostatic chuck is formed on the front surface of the transfer substrate.
Preferably, the array of micro light emitting diode bipolar electrostatic chuck further comprises a filled conductive layer disposed within each electrode lead hole and a layer of resilient material within the conductive layer, the conductive layer connecting the first contact electrode and the first terminal and the second contact electrode and the second terminal.
The invention adopts the bipolar electrostatic suction head and utilizes the electrostatic adsorption force to carry out mass transfer on the micro light-emitting diode, and simplifies the connecting structure of the electrostatic suction head and the electrostatic generator, thereby reducing the gap (gap) between the suction head and the surface of the micro light-emitting diode and carrying out high-efficiency transfer on the micro device by utilizing the electrostatic suction head.
Drawings
FIG. 1 is a schematic structural view of a micro light emitting diode bipolar electrostatic chuck according to the present invention;
FIG. 2 is a cross-sectional view of the micro light-emitting diode bipolar electrostatic chuck of FIG. 1;
FIG. 3 is a schematic structural diagram of a micro light emitting diode bipolar electrostatic chuck array according to the present invention;
FIG. 4 is a schematic diagram of the back side of the array of micro LED bipolar electrostatic chucks of FIG. 3;
FIG. 5 is a schematic view of the electrode feedthroughs of the array of miniature light emitting diode bipolar electrostatic chucks of FIG. 3;
FIG. 6 is a schematic diagram of the micro light emitting diode array of the micro light emitting diode bipolar electrostatic chuck of FIG. 3.
Detailed Description
The present invention is further illustrated by the following figures and specific examples, which are to be understood as illustrative only and not as limiting the scope of the invention, which is to be given the full breadth of the appended claims and any and all equivalent modifications thereof which may occur to those skilled in the art upon reading the present specification.
For the sake of simplicity, the drawings only schematically show the parts relevant to the present invention, and they do not represent the actual structure as a product. In addition, in order to make the drawings concise and understandable, components having the same structure or function in some of the drawings are only schematically illustrated or only labeled. In this document, "one" means not only "only one" but also a case of "more than one".
The invention discloses a micro light-emitting diode bipolar electrostatic suction head 100, as shown in fig. 1 and fig. 2, the bipolar electrostatic suction head 100 comprises a first electrode 10 which is circular and is not completely closed, a second electrode 20 which is positioned inside the first electrode 10 and is circular, a gap 30 positioned between the first electrode 10 and the second electrode 20, a first dielectric layer 40 filled in the gap 30, a first electrode connecting wire 11 connected with the first electrode 10, a second electrode connecting wire 21 connected with the second electrode 20 and a second dielectric layer 50, wherein the second dielectric layer 50 covers the first electrode 10, the second electrode 20, the first dielectric layer 40, the first electrode connecting wire 11 and the second electrode connecting wire 21, and a micro light-emitting diode is simultaneously adsorbed on the first electrode 10 and the second electrode 20.
The first electrode 10 and the second electrode 20 are both circular, increasing the suction force and reducing the edge discharge phenomenon.
Wherein the second electrode connecting line 21 extends from the incompletely closed position of the first electrode 10, and the extending direction of the first electrode connecting line 11 is opposite to the extending direction of the second electrode connecting line 21.
Wherein the thickness of the first dielectric layer 40 is not less than the thickness of the first electrode 10 and the second electrode 20, and the thickness of the second dielectric layer 50 is not less than the thickness of the first electrode 10 and the second electrode 20
Wherein, the first electrode 10 and the second electrode 20 are made of chromium and gold composite layers or metals such as titanium or aluminum which have good bonding force with the transport substrate 1 and have better oxidation resistance and corrosion resistance.
The invention also discloses a micro light-emitting diode bipolar electrostatic chuck array, as shown in fig. 3 and 4, which comprises a bipolar electrostatic chuck 100 arranged in M rows and N columns, a first contact electrode 61, a second contact electrode 62, a plurality of first connecting lines 63 connected with the first contact electrode 61, a plurality of second connecting lines 64 connected with the second contact electrode 62, and a plurality of second connecting lines 64 arranged on the first contact electrode61 and a plurality of electrode lead holes 612 in the second contact electrode 62, a first terminal 71 attached to the first contact electrode 61 and connected through the electrode lead holes 612, a second terminal 72 attached to the second contact electrode 62 and connected through the electrode lead holes 612, and a first voltage source V connected to the first terminal 71AAnd a second voltage source V connected to the second terminal 72BWherein the plurality of first connecting lines 63 and the plurality of second connecting lines 64 connect the first electrode connecting lines 11 and the second electrode connecting lines 21 of each row of the bipolar electrostatic chuck 100, respectively, in an alternating manner.
Wherein "the plurality of first connecting lines 63 and the plurality of second connecting lines 64 connect the first electrode connecting lines 11 and the second electrode connecting lines 21 of each row of the bipolar electrostatic chucks 100, respectively, in an alternating manner" means that the first electrode connecting lines 11 of the first row of the bipolar electrostatic chucks 100 are connected to the uppermost first connecting line 63, the second electrode connecting lines 21 of the first row of the bipolar electrostatic chucks 100 and the first electrode connecting lines 11 of the second row of the bipolar electrostatic chucks 100 are connected to opposite sides of the second connecting line 64, respectively, the second electrode connecting lines 21 of the second row of the bipolar electrostatic chucks 100 and the first electrode connecting lines 11 of the third row of the bipolar electrostatic chucks 100 are connected to opposite sides of the second row of the first connecting line 63, respectively, and so on, the second electrode connecting lines 21 of the last row of the bipolar electrostatic chucks 100 are connected to the lowermost first connecting line 63; or the first electrode connecting wires 11 of the first row of bipolar electrostatic suction heads 100 are connected to the uppermost second connecting wire 64, the second electrode connecting wires 21 of the first row of bipolar electrostatic suction heads 100 and the first electrode connecting wires 11 of the second row of bipolar electrostatic suction heads 100 are respectively connected to two opposite sides of the uppermost first connecting wire 64, the second electrode connecting wires 21 of the second row of bipolar electrostatic suction heads 100 and the first electrode connecting wires 11 of the third row of bipolar electrostatic suction heads 100 are respectively connected to two opposite sides of the second connecting wire 64 of the second row, and so on, the second electrode connecting wires 21 of the last row of bipolar electrostatic suction heads 100 are connected to the lowermost second connecting wire 64.
As shown in fig. 5, the micro-led bipolar electrostatic chuck array further comprises a filled conductive layer 613 disposed in each electrode lead hole 612 and an elastic material layer 614 disposed in the conductive layer 613, wherein the conductive layer 613 connects the first contact electrode 61 and the first terminal 71 and the second contact electrode 62 and the second terminal 72, and the first contact electrode 61 and the first terminal 71 and the second contact electrode 62 and the second terminal 72 are electrically connected.
The elastic material is arranged in the electrode lead hole, so that the stress in the contact electrode is reduced, and the service life of the electrostatic suction head is prolonged.
As shown in fig. 6, the array of micro light emitting diode bipolar electrostatic chucks is located on the transferring substrate 1, the micro light emitting diodes 200 arranged in the array are located on the temporary storage substrate 2, and when the micro light emitting diodes 200 need to be transferred, one micro light emitting diode 200 is simultaneously attracted by the first electrode 10 and the second electrode 20 of the bipolar electrostatic chuck 100.
The bipolar electrostatic chuck 100 is formed on the front surface of the transfer substrate 1.
The invention also discloses a manufacturing method of the micro light-emitting diode bipolar electrostatic suction head array, which comprises the following steps:
s1: first, electrode lead holes 612 are formed on the first contact electrode 61 and the second contact electrode 62 of the transfer substrate 1 using a CNC processing technique (i.e., computer numerical control precision machining) or a laser technique; then cleaning the transfer substrate 1, cleaning the transfer substrate 1 in an acidic or alkaline cleaning agent, then flushing the transfer substrate with water, and respectively placing the transfer substrate in an organic solution (such as acetone or isopropanol) and performing assistance by ultrasound;
s2: first, a conductive layer 613 is formed in the electrode lead hole 612 using an electroless plating technique (e.g., electroless silver plating); then, an elastic material such as PDMS (polydimethylsiloxane) is formed in the conductive layer 613 in the electrode lead hole 612;
s3: forming a first terminal 71 and a second terminal 71 on the back surface of the transfer substrate 1;
s4: a first electrode 10 and a second electrode 20 connected to a first contact electrode 61 and a second contact electrode 62, respectively, are formed on the front surface of the transfer substrate 1.
The specific method of step S3 is as follows:
s31: firstly, spin-coating a negative photoresist on the back surface of a transfer substrate 1, and then exposing and developing;
s32: cleaning the exposed transfer substrate 1 by using a plasma cleaning device;
s33: depositing a metal film on the back surface of the transport substrate 1 by physical vapor deposition, wherein the material of the metal film is a single layer of Ti or Cr/Au (Au is above Cr);
s34: the metal film is peeled by a peeling-off method to form target patterns, i.e., the first terminals 71 and the second terminals 72.
The specific method of step S4 is:
s41: uniformly coating a negative photoresist on the front surface of the transfer substrate 1, wherein the thickness of the negative photoresist is more than or equal to 2 mu m, and then carrying out exposure and development; finally, cleaning the exposed transfer substrate 1 by using a plasma cleaning device;
s42: depositing a metal film layer by physical vapor deposition (such as electron beam evaporation, magnetron sputtering and other film forming technologies), wherein the metal film layer is made of metal with good bonding force with the transport substrate 1, such as Ti/Cu (Cu is above Ti) or Cr/Au (Au is above Cr), and the metal film layer has thickness
S43: stripping the metal film layer by using a lift-off method to form a semi-closed target pattern, namely a first electrode 10;
s44: depositing an inorganic dielectric layer (made of SiNx, TiO) on the transfer substrate 1 by vapor deposition2Or Al2O3Etc.) having a thickness equal to that of the first electrode 10, followed by spin coating, exposure, and development, and finally, toDry etching the mechanical dielectric layer to make the mechanical dielectric layer only have a target position;
s45: repeating the steps S41 to S44 to form the second electrode 20;
s46: depositing SiNx and TiO on front surface of substrate by vapor deposition method2Or Al2O3Forming a second dielectric layer 50 with a thickness not less than
The invention adopts the bipolar electrostatic suction head and utilizes the electrostatic adsorption force to carry out mass transfer on the micro light-emitting diode, and simplifies the connecting structure of the electrostatic suction head and the electrostatic generator, thereby reducing the gap (gap) between the suction head and the surface of the micro light-emitting diode and carrying out high-efficiency transfer on the micro device by utilizing the electrostatic suction head.
Although the preferred embodiments of the present invention have been described in detail, the present invention is not limited to the details of the foregoing embodiments, and various equivalent changes (such as number, shape, position, etc.) may be made to the technical solution of the present invention within the technical spirit of the present invention, and these equivalent changes are all within the protection scope of the present invention.
Claims (9)
1. The bipolar electrostatic sucker is characterized by comprising a first electrode which is annular and is not completely closed, a second electrode which is positioned in the first electrode and is circular, a gap positioned between the first electrode and the second electrode, a first dielectric layer filled in the gap, a first electrode connecting wire connected with the first electrode, a second electrode connecting wire connected with the second electrode and a second dielectric layer, wherein the second dielectric layer covers the first electrode, the second electrode, the first dielectric layer, the first electrode connecting wire and the second electrode connecting wire, and the first electrode and the second electrode simultaneously adsorb one miniature light-emitting diode.
2. The micro light-emitting diode bipolar electrostatic chuck of claim 1, wherein the second electrode connecting line extends from the incompletely closed position of the first electrode, and the extending direction of the first electrode connecting line is opposite to the extending direction of the second electrode connecting line.
3. The micro light-emitting diode bipolar electrostatic chuck of claim 1, wherein the thickness of the first dielectric layer is not less than the thickness of the first and second electrodes.
4. The micro light-emitting diode bipolar electrostatic chuck of claim 1, wherein the second dielectric layer has a thickness not less than
5. The micro light-emitting diode bipolar electrostatic chuck of claim 1, wherein the first electrode and the second electrode are made of a composite layer of chromium and gold or titanium or aluminum.
6. A micro light-emitting diode bipolar electrostatic suction head array is characterized by comprising bipolar electrostatic suction heads arranged in M rows and N columns, a first contact electrode, a second contact electrode, a plurality of first connecting wires connected with the first contact electrode, a plurality of second connecting wires connected with the second contact electrode, a plurality of electrode lead holes arranged in the first contact electrode and the second contact electrode, a first terminal attached to the first contact electrode and connected through the electrode lead holes, and a second terminal attached to the second contact electrode and connected through the electrode lead holes, wherein the first connecting wires and the second connecting wires are connected with the first electrode connecting wires and the second electrode connecting wires of each row of bipolar electrostatic suction heads respectively in an alternating mode; the bipolar electrostatic chuck is the micro light-emitting diode bipolar electrostatic chuck according to any one of claims 1 to 5.
7. The array of micro light emitting diode bipolar electrostatic chuck of claim 6, further comprising a first voltage source connected to the first terminal and a second voltage source connected to the second terminal.
8. The array of micro light-emitting diode bipolar electrostatic chucks of claim 7, wherein the array of micro light-emitting diode bipolar electrostatic chucks are located on a transport substrate, the second terminal, the first voltage source, the second terminal, and the second voltage source are all located on a back side of the transport substrate, and the bipolar electrostatic chucks are formed on the front side of the transport substrate.
9. The array of micro light-emitting diode bipolar electrostatic chuck of claim 6, further comprising a filled conductive layer disposed within each electrode lead aperture and a layer of resilient material within the conductive layer, the conductive layer connecting the first contact electrode and the first terminal and the second contact electrode and the second terminal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010127004.1A CN111293070A (en) | 2020-02-28 | 2020-02-28 | Bipolar electrostatic suction head of miniature light-emitting diode and array thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010127004.1A CN111293070A (en) | 2020-02-28 | 2020-02-28 | Bipolar electrostatic suction head of miniature light-emitting diode and array thereof |
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| CN111293070A true CN111293070A (en) | 2020-06-16 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112271156A (en) * | 2020-09-28 | 2021-01-26 | 南京中电熊猫液晶显示科技有限公司 | Electrostatic transfer head and manufacturing method thereof |
| CN113745130A (en) * | 2021-08-23 | 2021-12-03 | 深圳市华星光电半导体显示技术有限公司 | Transfer mechanism |
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| CN112271156A (en) * | 2020-09-28 | 2021-01-26 | 南京中电熊猫液晶显示科技有限公司 | Electrostatic transfer head and manufacturing method thereof |
| CN112271156B (en) * | 2020-09-28 | 2022-09-13 | 南京中电熊猫液晶显示科技有限公司 | Electrostatic transfer head and manufacturing method thereof |
| CN113745130A (en) * | 2021-08-23 | 2021-12-03 | 深圳市华星光电半导体显示技术有限公司 | Transfer mechanism |
| CN113745130B (en) * | 2021-08-23 | 2023-10-17 | 深圳市华星光电半导体显示技术有限公司 | Transfer mechanism |
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