CN111130532A - IGBT gate push-pull driving circuit and method and IGBT driving circuit - Google Patents
IGBT gate push-pull driving circuit and method and IGBT driving circuit Download PDFInfo
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- CN111130532A CN111130532A CN201911415063.2A CN201911415063A CN111130532A CN 111130532 A CN111130532 A CN 111130532A CN 201911415063 A CN201911415063 A CN 201911415063A CN 111130532 A CN111130532 A CN 111130532A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/017509—Interface arrangements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/018—Coupling arrangements; Interface arrangements using bipolar transistors only
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Abstract
The application relates to an IGBT gate push-pull driving circuit, a method and an IGBT driving circuit, wherein the IGBT gate push-pull driving circuit comprises: the device comprises a driving chip and a push-pull driving module; the driving chip is connected with the push-pull driving module and used for providing driving signals for the push-pull driving module; the push-pull driving module is connected with the IGBT and used for processing and outputting driving voltage and driving current according to the driving signal so as to drive the IGBT to be switched on or switched off; the push-pull driving module is also used for not generating voltage drop after the IGBT is switched on or switched off and enters a steady state to enable the driving current to be zero, so that the driving voltage is equal to the design voltage. Through the technical scheme, the voltage drop of the driving voltage in the circuit at the front end of the IGBT gate drive can be avoided, and the IGBT driving voltage is ensured to be the same as the designed value.
Description
Technical Field
The application relates to the technical field of electronics, in particular to an IGBT gate push-pull driving circuit, an IGBT gate push-pull driving method and an IGBT driving circuit.
Background
With the rapid development of semiconductor technology, various power semiconductor devices with excellent performance are rapidly emerged, great development opportunities are brought to the industries such as power supply industry, new energy industry, motor driving and the like, and the rapid development of the power electronic industry in China is promoted to a great extent. However, due to the characteristics of the devices, the reliability of the power semiconductor device in operation depends greatly on the performance of the driving circuit, and a mature IGBT driving scheme at the present stage is a method for driving the IGBT by using push-pull amplification output. Due to the characteristics of the switching tube, when the IGBT is switched on, the gate pole current is zero, so that voltage drop is generated, the gate pole driving voltage of the IGBT is greatly influenced by the voltage drop, the driving voltage of the IGBT is lower than the designed driving voltage, and the switching-on and switching-off performance of the IGBT is influenced.
Disclosure of Invention
In order to solve the technical problems or at least partially solve the technical problems, embodiments of the present application provide an IGBT gate push-pull driving circuit, an IGBT gate push-pull driving method, and an IGBT driving circuit.
In a first aspect, an embodiment of the present application provides an IGBT gate push-pull driving circuit, which includes:
the device comprises a driving chip and a push-pull driving module;
the driving chip is connected with the push-pull driving module and used for providing driving signals for the push-pull driving module;
the push-pull driving module is connected with the IGBT and used for processing and outputting driving voltage and driving current according to the driving signal so as to drive the IGBT to be switched on or switched off;
the push-pull driving module is also used for not generating voltage drop after the IGBT is switched on or switched off and enters a steady state to enable the driving current to be zero, so that the driving voltage is equal to the design voltage.
Optionally, the push-pull driving module includes a first switch module, a second switch module, a first resistor, a second resistor, and a third resistor;
the driving chip is respectively connected with the first switch module and the second switch module through a first resistor, and provides driving signals for the first switch module and the second switch module through the first resistor so as to control the first switch module and the second switch module to be switched on or switched off;
the first switch module is connected with the IGBT through a second resistor and is used for outputting driving voltage and driving current to control the IGBT to be conducted when the first switch module is conducted and the second switch module is turned off;
the second switch module is connected with the IGBT through a second resistor and is used for outputting driving voltage and driving current to control the IGBT to be turned off when the second switch module is turned on and the first switch module is turned off;
the third resistor is connected between the first resistor and the second resistor and used for controlling the first switch module not to generate voltage drop after the IGBT is conducted and enters a steady state to enable the driving current to be zero, so that the driving voltage is equal to the design voltage, or,
and the third resistor is connected between the first resistor and the second resistor and used for controlling the second switch module not to generate voltage drop after the IGBT is turned off and enters a steady state to enable the driving current to be zero, so that the driving voltage is equal to the design voltage.
Optionally, the first switch module includes a first power supply and a first switch tube, the second switch module includes a second power supply and a second switch tube, and the first switch tube and the second switch tube are both triodes;
the positive electrode of the first power supply is connected with the collector of the first switching tube, the negative electrode of the first switching tube is grounded, the base electrode of the first switching tube is connected with the first end of the third resistor, and the emitter electrode of the first switching tube is connected with the second end of the third resistor;
the anode of the second power supply is grounded, the cathode of the second power supply is connected with the collector of the second switching tube, the base of the second switching tube is connected with the first end of the third resistor, and the emitter of the second switching tube is connected with the second end of the third resistor;
the first end of the third resistor is connected with one end of the first resistor, and the second end of the third resistor is connected with one end of the second resistor;
and the grid of the IGBT is connected with the other end of the second resistor.
Optionally, the first switch module includes a first power supply and a first switch tube, the second switch module includes a second power supply and a second switch tube, and the first switch tube and the second switch tube are both MOS tubes;
the positive electrode of the first power supply is connected with the drain electrode of the first switching tube, the negative electrode of the first switching tube is grounded, the grid electrode of the first switching tube is connected with the first end of the third resistor, and the source electrode of the first switching tube is connected with the second end of the third resistor;
the positive electrode of the second power supply is grounded, the negative electrode of the second power supply is connected with the drain electrode of the second switching tube, the grid electrode of the second switching tube is connected with the first end of the third resistor, and the source electrode of the second switching tube is connected with the second end of the third resistor;
the first end of the third resistor is connected with one end of the first resistor, and the second end of the third resistor is connected with one end of the second resistor;
and the grid of the IGBT is connected with the other end of the second resistor.
Optionally, the circuit further includes a capacitor, one end of the capacitor is connected to the gate of the IGBT, and the other end of the capacitor is grounded.
Optionally, the first power supply and the second power supply are provided by a power supply chip, and the power supply chip is further configured to supply power to the driving chip so that the driving chip provides a driving signal to the push-pull driving module.
Alternatively, the driving signal is a square wave having a high level of a positive voltage and a low level of a negative voltage.
In a second aspect, an embodiment of the present application provides an IGBT gate push-pull driving method, including:
the driving chip provides a driving signal to the push-pull driving module;
the push-pull driving module processes and outputs driving voltage and driving current according to the driving signal so as to drive the IGBT to be switched on or switched off;
the push-pull driving module does not generate voltage drop after the IGBT is switched on or switched off and enters a steady state to enable the driving current to be zero, and the driving voltage is equal to the design voltage.
Optionally, the push-pull driving module includes a first switch module, a second switch module, a first resistor, a second resistor, and a third resistor;
the push-pull driving module processes and outputs driving voltage and driving current according to the driving signal so as to drive the IGBT to be switched on or switched off, and the push-pull driving module comprises:
the driving chip provides driving signals for the first switch module and the second switch module through the first resistor to control the first switch module and the second switch module to be switched on or switched off;
when the driving signal controls the first switch module to be switched on and the second switch module to be switched off, the first switch module outputs a driving voltage and a driving current through the second resistor to control the IGBT to be switched on, or,
when the driving signal controls the second switch module to be switched on and the first switch module to be switched off, the second switch module outputs driving voltage and driving current through the second resistor to control the IGBT to be switched off;
the push-pull drive module does not generate voltage drop after the IGBT is switched on or switched off and enters a steady state to enable the drive current to be zero, so that the drive voltage is equal to the design voltage, and the push-pull drive module comprises:
after the IGBT is conducted and enters a stable state to enable the driving current to be zero, the third resistor controls the first switch module not to generate voltage drop to enable the driving voltage to be equal to the design voltage, or,
and after the IGBT is turned off and enters a stable state to enable the driving current to become zero, the third resistor controls the second switch module not to generate voltage drop, and the driving voltage is equal to the design voltage.
In a third aspect, the present application provides an IGBT driving circuit including the IGBT gate push-pull driving circuit according to any one of the foregoing.
Compared with the prior art, the technical scheme provided by the embodiment of the application has the following advantages:
through this application technical scheme, can avoid driving voltage to produce the pressure drop in the circuit of IGBT gate drive front end, ensure that IGBT driving voltage is the same with design voltage value.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without inventive exercise.
Fig. 1 is a circuit diagram of an IGBT gate push-pull driving circuit according to an embodiment;
FIG. 2 is a waveform diagram providing no voltage drop according to one embodiment;
fig. 3 is a waveform diagram of a prior art voltage drop.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
Igbt (insulated Gate Bipolar transistor), insulated Gate Bipolar transistor.
In one embodiment, an IGBT gate push-pull drive circuit is provided, the circuit comprising: the device comprises a driving chip and a push-pull driving module;
the driving chip is connected with the push-pull driving module and used for providing driving signals for the push-pull driving module; the push-pull driving module is connected with the IGBT and used for processing and outputting driving voltage and driving current according to the driving signal so as to drive the IGBT to be switched on or switched off; the push-pull driving module is also used for not generating voltage drop after the IGBT is switched on or switched off and enters a steady state to enable the driving current to be zero, so that the driving voltage is equal to the design voltage.
Specifically, the driving chip can provide square waves with high level being positive voltage and low level being negative voltage, the push-pull driving module performs power amplification processing according to the high level or the low level provided by the driving chip, and the output driving voltage and the driving current control the on or off of the IGBT, wherein the enhanced driving current is used for driving the IGBT to be on or off; after the IGBT is switched on or switched off, the push-pull driving module enables the driving current to be zero through the circuit characteristics of the push-pull driving module, and then no voltage drop is generated, so that the driving voltage of the IGBT grid electrode is equal to the design voltage, and the design voltage is a power supply of the push-pull driving module. The voltage values of the high level and the low level provided by the driving chip can be equal or unequal. Because the voltage value of the low level does not need to be very high to achieve the effect of reliably turning off the IGBT.
In one embodiment, the push-pull driving module comprises a first switch module, a second switch module, a first resistor, a second resistor and a third resistor;
the driving chip is respectively connected with the first switch module and the second switch module through a first resistor, and provides driving signals for the first switch module and the second switch module through the first resistor so as to control the first switch module and the second switch module to be switched on or switched off;
the first switch module is connected with the IGBT through a second resistor and is used for outputting driving voltage and driving current to control the IGBT to be conducted when the first switch module is conducted and the second switch module is turned off;
the second switch module is connected with the IGBT through a second resistor and is used for outputting driving voltage and driving current to control the IGBT to be turned off when the second switch module is turned on and the first switch module is turned off;
the third resistor is connected between the first resistor and the second resistor and used for controlling the first switch module not to generate voltage drop after the IGBT is conducted and enters a steady state to enable the driving current to be zero, so that the driving voltage is equal to the design voltage, or,
and the third resistor is connected between the first resistor and the second resistor and used for controlling the second switch module not to generate voltage drop after the IGBT is turned off and enters a steady state to enable the driving current to be zero, so that the driving voltage is equal to the design voltage.
In one embodiment, the first switch module comprises a first power supply and a first switch tube, the second switch module comprises a second power supply and a second switch tube, and the first switch tube and the second switch tube are both triodes;
the positive electrode of the first power supply is connected with the collector of the first switching tube, the negative electrode of the first switching tube is grounded, the base electrode of the first switching tube is connected with the first end of the third resistor, and the emitter electrode of the first switching tube is connected with the second end of the third resistor;
the anode of the second power supply is grounded, the cathode of the second power supply is connected with the collector of the second switching tube, the base of the second switching tube is connected with the first end of the third resistor, and the emitter of the second switching tube is connected with the second end of the third resistor;
the first end of the third resistor is connected with one end of the first resistor, and the second end of the third resistor is connected with one end of the second resistor;
and the grid of the IGBT is connected with the other end of the second resistor.
In one embodiment, the first switching tube and the second switching tube may be MOS tubes. The first switch tube is an NMOS tube, and the second switch tube is a PMOS tube.
Fig. 1 is a circuit diagram of an IGBT gate push-pull driving circuit according to an embodiment. Referring to fig. 1, the IC chip is connected to the gate of the IGBT through resistors R1, R3, and R2 in sequence, the collector of the transistor Q1 is connected to the positive electrode V + of the first power supply, the base is connected to the node between the resistors R3 and R1, the emitter is connected to the node between the resistors R3 and R2, and the negative electrode of the first power supply is grounded. The collector of the triode Q2 is connected with the negative electrode V-of the second power supply, the base is connected with the node between the resistors R3 and R1, and the emitter is connected with the node between the resistors R3 and R2; the anode of the second power supply is grounded; one end of the capacitor C1 is connected with the gate of the IGBT, and the other end is grounded. The transistor Q1 is an NPN transistor, and the transistor Q2 is a PNP transistor. The IGBT gate electrode is the grid electrode of the IGBT, and the voltage provided by the first power supply and the second power supply is the design voltage.
The IC chip provides square waves with high level as positive voltage and low level as negative voltage. When the driving signal provided by the IC chip is at a high level, the high level provides voltage to the base electrode of the triode Q1 through the resistor R1, so that the base electrode voltage of the triode Q1 is greater than the emitter voltage by 0.7v, and the triode Q1 is conducted; at this time, transistor Q2 is turned off because the base voltage of transistor Q2 is greater than the emitter voltage. After the transistor Q1 is turned on, the first power supply (the voltage of the first power supply is equal to the high level of the driving signal provided by the IC chip) provides the driving voltage and the driving current for the gate of the IGBT through the collector, emitter, and resistor R2 of the transistor Q1, so that the IGBT is turned on.
After the IGBT is conducted, the driving current is changed into 0 after the gate drive of the IGBT is completed, the IGBT enters a stable state, the voltage values of the voltages of the two points a and b at the two ends of the resistor R3 are consistent, and the triode Q1 has no voltage drop due to the existence of the resistor R3. Namely, the potential of the emitter E of the triode Q1 is equal to the potential of the base B, so that the push-pull circuit realizes rail-to-rail output.
FIG. 2 is a waveform diagram of no voltage drop provided by one embodiment. Referring to fig. 1 and 2, the voltage value of the base of the transistor Q1 (i.e., the voltage value of the point a) is equal to the voltage value of the emitter of the transistor Q1 (i.e., the voltage value of the point b), i.e., the voltage across the resistor R3 is equal, so that the waveforms coincide.
Fig. 3 is a waveform diagram of a prior art voltage drop. Referring to fig. 3, two waveforms are parallel up and down in the middle, the upper waveform is the waveform at the base of the transistor Q1, the lower waveform is the waveform at the emitter of the transistor Q1, the voltage value of the emitter of the transistor Q1 (i.e., the voltage value at the point b) is not equal to the voltage value at the base of the transistor Q1 (i.e., the voltage value at the point a), i.e., the voltages at the two ends of the resistor R3 are not equal, so the waveforms do not overlap. The potential of the emitter of the triode Q1 is lower than the potential of the base by 0.5V, which is close to 0.7V.
Referring to fig. 1, when the driving signal provided by the IC chip is at a low level, the low level provides a voltage to the base of the transistor Q2 through the resistor R1, so that the base voltage of the transistor Q2 is less than the emitter voltage of 0.7v, and the transistor Q2 is turned on; at this time, transistor Q1 is turned off because the base voltage of transistor Q1 is less than the emitter voltage. After the transistor Q2 is turned on, the second power supply (the voltage of the second power supply is equal to the low level of the driving signal provided by the IC chip) provides a negative driving power supply and a driving current for the gate of the IGBT through the collector, emitter, and resistor R2 of the transistor Q2, so that the IGBT is turned off.
After the IGBT is turned off, the driving current is changed into 0 after the gate drive of the IGBT is finished, the driving current enters a stable state, the voltage values of the two points a and b at the two ends of the resistor R3 are consistent, and the existence of the resistor R3 enables the triode Q2 not to have voltage drop. Namely, the potential of the emitter E of the triode Q2 is equal to the potential of the base B, so that the push-pull circuit realizes rail-to-rail output.
The capacitor C1 can control the turn-on and turn-off speed of the IGBT, i.e., the turn-on and turn-off time.
The triodes Q1 and Q2 form a push-pull circuit, and the resistor R3 realizes that when the IGBT is conducted and enters a steady state, the rail of the push-pull circuit is output from the rail.
Of course, the transistors Q1 and Q2 may be replaced by N-type MOS transistors and P-type MOS transistors. At the moment, the positive electrode V + of the first power supply is connected with the drain electrode of the NMOS tube, the negative electrode of the NMOS tube is grounded, the grid electrode of the NMOS tube is connected with the first end of the resistor R3, and the source electrode of the NMOS tube is connected with the second end of the resistor R3; the positive electrode of the second power supply is grounded, the negative electrode V-is connected with the drain electrode of the PMOS tube, the grid electrode of the PMOS tube is connected with the first end of the resistor R3, and the source electrode of the PMOS tube is connected with the second end of the resistor R3; a first end of the resistor R3 is connected with one end of the resistor R1, and a second end is connected with one end of the resistor R2; the gate of the IGBT is connected to the other end of the resistor R2.
In one embodiment, the first power supply, the second power supply and the driving chip can all be powered by the same power supply chip.
It is noted that, in this document, relational terms such as "first" and "second," and the like, may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The foregoing are merely exemplary embodiments of the present invention, which enable those skilled in the art to understand or practice the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. An IGBT gate push-pull drive circuit, the circuit comprising:
the device comprises a driving chip and a push-pull driving module;
the driving chip is connected with the push-pull driving module and used for providing driving signals for the push-pull driving module;
the push-pull driving module is connected with the IGBT and used for processing and outputting driving voltage and driving current according to the driving signal so as to drive the IGBT to be switched on or switched off;
the push-pull driving module is also used for not generating voltage drop after the IGBT is switched on or switched off and enters a stable state so that the driving current becomes zero, and the driving voltage is equal to the design voltage.
2. The circuit of claim 1, wherein the push-pull driving module comprises a first switch module, a second switch module, a first resistor, a second resistor, and a third resistor;
the driving chip is respectively connected with the first switch module and the second switch module through the first resistor, and provides driving signals for the first switch module and the second switch module through the first resistor so as to control the first switch module and the second switch module to be switched on or switched off;
the first switch module is connected with the IGBT through the second resistor and is used for outputting driving voltage and driving current to control the IGBT to be switched on when the first switch module is switched on and the second switch module is switched off;
the second switch module is connected with the IGBT through the second resistor and is used for outputting driving voltage and driving current to control the IGBT to be turned off when the second switch module is turned on and the first switch module is turned off;
the third resistor is connected between the first resistor and the second resistor, and is used for controlling the first switch module not to generate voltage drop after the IGBT is conducted and enters a steady state to enable the driving current to become zero, so that the driving voltage is equal to the design voltage, or,
the third resistor is connected between the first resistor and the second resistor and used for controlling the second switch module not to generate voltage drop after the IGBT is turned off and enters a steady state to enable the driving current to become zero, so that the driving voltage is equal to the design voltage.
3. The circuit of claim 2, wherein the first switch module comprises a first power supply and a first switch tube, the second switch module comprises a second power supply and a second switch tube, and the first switch tube and the second switch tube are both triodes;
the positive electrode of the first power supply is connected with the collector of the first switching tube, the negative electrode of the first switching tube is grounded, the base electrode of the first switching tube is connected with the first end of the third resistor, and the emitter electrode of the first switching tube is connected with the second end of the third resistor;
the anode of the second power supply is grounded, the cathode of the second power supply is connected with the collector of the second switching tube, the base of the second switching tube is connected with the first end of the third resistor, and the emitter of the second switching tube is connected with the second end of the third resistor;
the first end of the third resistor is connected with one end of the first resistor, and the second end of the third resistor is connected with one end of the second resistor;
and the grid of the IGBT is connected with the other end of the second resistor.
4. The circuit of claim 2, wherein the first switch module comprises a first power supply and a first switch tube, the second switch module comprises a second power supply and a second switch tube, and the first switch tube and the second switch tube are both MOS tubes;
the positive electrode of the first power supply is connected with the drain electrode of the first switching tube, the negative electrode of the first switching tube is grounded, the grid electrode of the first switching tube is connected with the first end of the third resistor, and the source electrode of the first switching tube is connected with the second end of the third resistor;
the positive electrode of the second power supply is grounded, the negative electrode of the second power supply is connected with the drain electrode of the second switching tube, the grid electrode of the second switching tube is connected with the first end of the third resistor, and the source electrode of the second switching tube is connected with the second end of the third resistor;
the first end of the third resistor is connected with one end of the first resistor, and the second end of the third resistor is connected with one end of the second resistor;
and the grid of the IGBT is connected with the other end of the second resistor.
5. The circuit of claim 3 or 4, further comprising a capacitor having one end connected to the gate of the IGBT and the other end connected to ground.
6. The circuit of claim 3 or 4, wherein the first power supply and the second power supply are provided by a power chip, and the power chip is further configured to supply power to the driving chip so that the driving chip provides a driving signal to the push-pull driving module.
7. The circuit of claim 6, wherein the driving signal is a square wave with a high level of positive voltage and a low level of negative voltage.
8. An IGBT gate push-pull driving method, comprising:
the driving chip provides a driving signal to the push-pull driving module;
the push-pull driving module processes and outputs driving voltage and driving current according to the driving signal so as to drive the IGBT to be switched on or switched off;
the push-pull driving module does not generate voltage drop after the IGBT is switched on or switched off and enters a stable state so that the driving current becomes zero, and the driving voltage is equal to the design voltage.
9. The method of claim 8, wherein the push-pull driving module comprises a first switch module, a second switch module, a first resistor, a second resistor, and a third resistor;
the push-pull driving module processes and outputs driving voltage and driving current according to the driving signal so as to drive the IGBT to be switched on or switched off, and the push-pull driving module comprises:
the driving chip provides driving signals for the first switch module and the second switch module through the first resistor to control the first switch module and the second switch module to be switched on or switched off;
when the driving signal controls the first switch module to be switched on and the second switch module to be switched off, the first switch module outputs a driving voltage and a driving current through the second resistor to control the IGBT to be switched on, or,
when the driving signal controls the second switch module to be switched on and the first switch module to be switched off, the second switch module outputs driving voltage and driving current through a second resistor to control the IGBT to be switched off;
the push-pull driving module does not generate voltage drop after the IGBT is switched on or switched off and enters a stable state to enable the driving current to become zero, enables the driving voltage to be equal to a design voltage, and comprises:
the third resistor controls the first switch module not to generate voltage drop after the IGBT is conducted into a stable state to enable the driving current to become zero, so that the driving voltage is equal to the design voltage, or,
and after the IGBT is switched off and enters a stable state to enable the driving current to become zero, the third resistor controls the second switch module not to generate voltage drop, and the driving voltage is enabled to be equal to the design voltage.
10. An IGBT drive circuit comprising the IGBT gate push-pull drive circuit according to any one of claims 1 to 4 and 7.
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| CN112994502A (en) * | 2021-04-29 | 2021-06-18 | 东风汽车集团股份有限公司 | Vehicle IGBT module loss reduction circuit, control method and motor controller |
| CN114296502A (en) * | 2021-12-30 | 2022-04-08 | 苏州汇川控制技术有限公司 | Voltage stabilizing circuit, device and power device driving system |
| CN116794504A (en) * | 2023-08-21 | 2023-09-22 | 深圳海辰储能控制技术有限公司 | Dry contact output detection circuit and method, energy storage system and storage medium |
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| CN207251460U (en) * | 2017-08-30 | 2018-04-17 | 苏州汇川联合动力系统有限公司 | A kind of active clamp circuit and electric machine controller of suppression IGBT shut-offs spike |
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| CN103178694A (en) * | 2013-03-01 | 2013-06-26 | 南京埃斯顿自动控制技术有限公司 | Insulated gate bipolar transistor gate driving push-pull circuit |
| CN105227165A (en) * | 2014-06-27 | 2016-01-06 | 西门子公司 | IGBT gate drive circuit, IGBT device and electric automobile |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112234962A (en) * | 2020-12-16 | 2021-01-15 | 杭州飞仕得科技有限公司 | Power semiconductor driving circuit with dynamically controllable gate current |
| CN112994502A (en) * | 2021-04-29 | 2021-06-18 | 东风汽车集团股份有限公司 | Vehicle IGBT module loss reduction circuit, control method and motor controller |
| CN114296502A (en) * | 2021-12-30 | 2022-04-08 | 苏州汇川控制技术有限公司 | Voltage stabilizing circuit, device and power device driving system |
| CN116794504A (en) * | 2023-08-21 | 2023-09-22 | 深圳海辰储能控制技术有限公司 | Dry contact output detection circuit and method, energy storage system and storage medium |
| CN116794504B (en) * | 2023-08-21 | 2024-01-02 | 深圳海辰储能科技有限公司 | Dry contact output detection circuit and method, energy storage system and storage medium |
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