CN111048548A - Micro-display device and projection system - Google Patents
Micro-display device and projection system Download PDFInfo
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- CN111048548A CN111048548A CN201911395461.2A CN201911395461A CN111048548A CN 111048548 A CN111048548 A CN 111048548A CN 201911395461 A CN201911395461 A CN 201911395461A CN 111048548 A CN111048548 A CN 111048548A
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- 229910000679 solder Inorganic materials 0.000 claims description 14
- 238000000926 separation method Methods 0.000 claims 1
- 238000003466 welding Methods 0.000 abstract description 23
- 239000010410 layer Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002207 retinal effect Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 210000001525 retina Anatomy 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
- G03B21/00—Projectors or projection-type viewers; Accessories therefor
- G03B21/005—Projectors using an electronic spatial light modulator but not peculiar thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
The invention discloses a Micro-display device which comprises a light emitting unit and a driving back plate, wherein the light emitting unit comprises a plurality of Micro-LED pixel points which are arranged in an array manner, and the driving back plate is provided with a driving unit corresponding to the Micro-LED pixel points; each Micro-LED pixel point corresponds to one driving unit, and at least two groups of electrodes for electric connection are arranged between the Micro-LED pixel point and the corresponding driving unit; or each Micro-LED pixel point corresponds to at least two driving units, and each driving unit is provided with an electrode electrically connected with the Micro-LED pixel point. In the invention, the number of welding spots for connecting the Micro-LED pixel points and the driving unit electrodes is designed in a redundancy way, so that the risk of system dark spots is reduced.
Description
Technical Field
The invention belongs to the field of micro display, and particularly relates to a micro display device and a projection system.
Background
Display devices in the field of microdisplays are often used to produce high-brightness microdisplay images that are projected through an optical system for perception by an observer, and the projection target may be the retina (virtual image) or a projection screen (real phase).
The conventional micro display screen is not used for direct visual observation, and has a small pixel size and a high pixel density Pixelper inc (PPI). The traditional Micro display technology includes LCoS (Liquid Crystal on silicon) and DLP (Digital Light Processing), the emerging technology is mainly Micro-LED, the principle is that an LED epitaxial wafer is etched into individual and independent pixels Pixel (the process and the product are called MESA) by a high-precision pattern exposure, development and etching mode, and the size of the Pixel is usually in the micrometer scale (0.1-50 μm).
The Micro-LED is formed by thinning, microminiaturizing and arraying an LED structure, the size is reduced to about 1-10 mu m, the LED structure is transferred to a substrate in batch mode, then a protective layer and an electrode are completed by physical deposition, and then packaging is carried out to complete the display of the Micro-LED. The Micro-LED display system provided in application No. 201810339312.3, comprising a control unit, a detection unit, a driving unit, and a display panel comprising a plurality of Micro-LEDs arranged in an array; the output end of the detection unit is electrically connected with the input end of the control unit, the output end of the control unit is electrically connected with the input end of the driving unit, and the output end of the driving unit is electrically connected with the anode of the Micro-LED; the detection unit is used for acquiring external environment parameters; the control unit is used for adjusting the brightness or the color tone of the plurality of Micro-LEDs arranged in the array in the display panel according to the external environment parameters.
The Micro-LED adopts bonding technology to combine the driving back plate and the MESA, and the number of welding points reaches million orders of magnitude generally. A Micro-LED as provided in publication No. CN 110581206A, comprising a GaN-based Micro-LED chip and a Si substrate; the chip is provided with a dielectric film and an n-GaN layer from bottom to top; the surface of the n-GaN layer is provided with an upper step part and a lower step part; the upper step part of the n-GaN layer is sequentially provided with an MQW layer, a p-GaN layer and a reflector electrode, and the lower step part of the n-GaN layer is provided with ohmic contact metal; the GaN-based Micro-LED chip is flip-chip welded on the Si driving substrate through the In column array.
The existing Bonding process has the phenomenon of single-point failure (insufficient soldering and desoldering) under the condition of point-to-point welding of million orders, so that single-pixel display is abnormal, and the failure is random.
Disclosure of Invention
Aiming at the problems in the prior art, the application provides a Micro-display device which comprises a light emitting unit and a driving back plate, wherein the light emitting unit comprises a plurality of Micro-LED pixel points which are arranged in an array mode, and the driving back plate is provided with a driving unit corresponding to the Micro-LED pixel points;
each Micro-LED pixel point corresponds to one driving unit, and at least two groups of electrodes for electric connection are arranged between the Micro-LED pixel point and the corresponding driving unit;
or each Micro-LED pixel point corresponds to at least two driving units, and each driving unit is provided with an electrode electrically connected with the Micro-LED pixel point.
According to the application, the effect that the single welding point fails and the normal work of the corresponding pixel is not influenced is achieved by adding the connecting electrodes of the Micro-LED pixel points.
Meanwhile, the driving units are additionally arranged, a many-to-one driving mode is adopted, the same Micro-LED pixel point is welded with the electrodes of the driving units at the same time, and abnormal pixel display caused by single welding point failure can be overcome.
Preferably, the electrodes comprise an anode and a cathode electrically connected to the Micro-LED pixel.
For the LED chip, the anode and the cathode should be connected with the electrode on the driving unit at the same time when the LED chip is lighted, and correspondingly, the driving unit is provided with the anode and the cathode.
Preferably, the anode and/or the cathode are provided with at least two welding points which are electrically connected with the Micro-LED pixel points.
In the application, a plurality of welding spots can be arranged on the same electrode, and the LED chip is connected with the electrode through the plurality of welding spots.
In order to reduce the process difficulty, a plurality of welding spots are preferably arranged at equal intervals.
Preferably, when a plurality of welding points exist on the same electrode, the plurality of welding points are distributed in a regular arrangement, which is beneficial to the welding operation of the bonding process.
Preferably, the plurality of welding points are arranged in a regular polygon.
Preferably, on the same electrode, the two adjacent welding points have controllable maximum distance therebetween, so that mutual interference of the welding points is avoided.
Preferably, when each Micro-LED pixel point pair links at least two driving units, each driving unit has a plurality of groups of electrodes electrically connected to the same Micro-LED pixel point.
When the Micro-LED pixel points are controlled in a multi-to-one mode, the electrode pairs connected with the LED chips by the driving units can be in multiple groups.
The invention also provides a projection system which is provided with the micro display device.
Such projection systems include, but are not limited to, retinal projectors and projectors.
In the invention, the number of welding spots for connecting the Micro-LED pixel points and the driving unit electrodes is designed redundantly, so that the risk of system dark spots is reduced; the number of LED mesa emission points may be one-to-many, or many-to-one for each sub-pixel driving circuit.
Drawings
FIG. 1 is a block diagram of a microdisplay device in the present application;
FIG. 2 is a distribution diagram of solder points on an electrode, wherein A is two solder points; the B picture is three welding spots; the C picture is four welding spots;
FIG. 3 is a schematic diagram of a plurality of Micro-LED pixels corresponding to a driving unit;
fig. 4 is a schematic diagram of a single Micro-LED pixel point corresponding to a plurality of driving units.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and thus the present invention is not limited to the specific embodiments disclosed below. The terms "upper", "lower", "left" and "right" as used herein are set forth with reference to the accompanying drawings, and it is understood that the presence of the terms does not limit the scope of the present invention.
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
Referring to fig. 1 to 4, the Micro display device includes a light emitting unit 100 and a driving backplane 101, where the light emitting unit 100 includes a plurality of Micro-LED pixels 101 arranged in an array, and the driving backplane 200 has a driving unit 201 corresponding to the Micro-LED pixels 101.
As shown in fig. 1, each Micro-LED pixel 101 corresponds to one driving unit 201, and at least two groups of electrodes 300 for electrical connection are disposed between the Micro-LED pixel 101 and the corresponding driving unit 201.
In this embodiment, the number of the connection electrodes 300 of each Micro-LED pixel 101 is increased, so that the effect that the single welding point fails without affecting the normal operation of the corresponding pixel is achieved.
In another embodiment, the electrodes 300 may comprise an anode and a cathode electrically connected to the Micro-LED pixel 101, forming an electrode pair. For the LED chip, the positive and negative electrodes should be connected to the electrodes of the driving unit at the same time when the LED chip is turned on, and correspondingly, the driving unit 201 is provided with the positive electrode and the negative electrode.
In another embodiment, a plurality of pads can be disposed on each electrode 300, and the electrode can be an anode or a cathode, i.e., the anode and/or the cathode have at least two pads 300 electrically connected to the Micro-LED pixels. As shown in fig. 2, the number of solder joints 300 in A, B and C is 2, 3, and 4, respectively.
In the case of multiple pads, each pad 300 may be connected to the same chip; or in another embodiment, each solder joint 300 connects different Micro-LED pixel sites.
In the embodiment, in order to reduce the process difficulty, the plurality of welding points are equally spaced. When a plurality of solder joints 300 exist on the same electrode, the solder joints 300 are distributed in a regular arrangement, which is beneficial to the soldering operation of the bonding process.
As shown in fig. 2B and C, a plurality of welding points are arranged in a regular polygon. In addition, on the same electrode 400, the two adjacent welding points 300 have a controllable maximum distance therebetween, so that mutual interference between the welding points is avoided.
In another embodiment, a plurality of Micro-LED pixels 101 may be correspondingly connected to the same driving unit 201, as shown in fig. 4.
In another embodiment, each Micro-LED pixel 101 corresponds to at least two driving units 201, and each driving unit 201 has an electrode 300 electrically connected to the Micro-LED pixel.
Similarly, the electrodes 300 should include an anode and a cathode electrically connected to the Micro-LED pixel 101, forming a pair of electrodes. For the LED chip, the positive and negative electrodes should be connected to the electrodes of the driving unit at the same time when the LED chip is turned on, and correspondingly, the driving unit 201 is provided with the positive electrode and the negative electrode.
In addition, each electrode 300 may be provided with a plurality of solder joints, and the electrode may be an anode or a cathode, that is, the anode and/or the cathode have at least two solder joints 300 electrically connected to the Micro-LED pixel points.
In another embodiment, the present invention also provides a projection system having a microdisplay device as described above. Such projection systems include, but are not limited to, retinal projectors and projectors.
The above description is only exemplary of the preferred embodiments of the present invention, and is not intended to limit the present invention, and any modifications, equivalents, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. A microdisplay device, comprising: the LED display panel comprises a light-emitting unit and a driving back plate, wherein the light-emitting unit comprises a plurality of Micro-LED pixel points which are arranged in an array mode, and the driving back plate is provided with a driving unit corresponding to the Micro-LED pixel points;
each Micro-LED pixel point corresponds to one driving unit, and at least two groups of electrodes for electric connection are arranged between the Micro-LED pixel point and the corresponding driving unit;
or each Micro-LED pixel point corresponds to at least two driving units, and each driving unit is provided with an electrode electrically connected with the Micro-LED pixel point.
2. The microdisplay device of claim 1 in which the electrodes comprise an anode and a cathode electrically connected to the Micro-LED pixel sites.
3. The microdisplay device of claim 2 in which the anode and/or cathode has at least two solder connections thereon for electrically connecting to the Micro-LED pixels.
4. The microdisplay device of claim 3 in which the plurality of solder joints are equally spaced.
5. The microdisplay device of claim 3 in which when there are multiple solder joints on the same electrode, the multiple solder joints are distributed in a regular array.
6. The microdisplay device of claim 5 in which the plurality of solder points are arranged in a regular polygon.
7. The microdisplay device of claim 1 in which adjacent solder joints on the same electrode have a controllable maximum separation distance.
8. The microdisplay device of claim 1, wherein when each Micro-LED pixel point pair links at least two drive units, each drive unit has multiple sets of electrodes electrically connected to the same Micro-LED pixel point.
9. A projection system, characterized in that the projection system comprises a microdisplay device of any of claims 1-8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911395461.2A CN111048548A (en) | 2019-12-30 | 2019-12-30 | Micro-display device and projection system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911395461.2A CN111048548A (en) | 2019-12-30 | 2019-12-30 | Micro-display device and projection system |
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| Publication Number | Publication Date |
|---|---|
| CN111048548A true CN111048548A (en) | 2020-04-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201911395461.2A Pending CN111048548A (en) | 2019-12-30 | 2019-12-30 | Micro-display device and projection system |
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| CN (1) | CN111048548A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112951874A (en) * | 2021-04-08 | 2021-06-11 | 长沙安牧泉智能科技有限公司 | Method for improving micro-led flexibility and interconnection reliability |
| CN113851073A (en) * | 2020-06-28 | 2021-12-28 | 中国科学院长春光学精密机械与物理研究所 | Miniature LED display device based on redundancy design and dynamic compensation |
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| US20130082271A1 (en) * | 2010-09-29 | 2013-04-04 | Panasonic Corporation | Thin-film semiconductor device for display apparatus, method for manufacturing thin-film semiconductor device for display apparatus, el display panel, and el display apparatus |
| KR20170133765A (en) * | 2016-05-26 | 2017-12-06 | 엘지이노텍 주식회사 | Light emitting device |
| CN107681034A (en) * | 2017-08-30 | 2018-02-09 | 天津三安光电有限公司 | It is micro-led and preparation method thereof |
| CN108257516A (en) * | 2016-12-29 | 2018-07-06 | 英属开曼群岛商錼创科技股份有限公司 | Display and its method for repairing and mending |
| EP3460861A2 (en) * | 2017-09-21 | 2019-03-27 | InnoLux Corporation | Display device |
| WO2019184180A1 (en) * | 2018-03-29 | 2019-10-03 | 昆山工研院新型平板显示技术中心有限公司 | Drive backplane, micro light-emitting diode display panel and display |
| CN110518107A (en) * | 2018-05-21 | 2019-11-29 | 夏普株式会社 | Micro- light-emitting component, image-displaying member and forming method thereof |
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2019
- 2019-12-30 CN CN201911395461.2A patent/CN111048548A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130082271A1 (en) * | 2010-09-29 | 2013-04-04 | Panasonic Corporation | Thin-film semiconductor device for display apparatus, method for manufacturing thin-film semiconductor device for display apparatus, el display panel, and el display apparatus |
| KR20170133765A (en) * | 2016-05-26 | 2017-12-06 | 엘지이노텍 주식회사 | Light emitting device |
| CN108257516A (en) * | 2016-12-29 | 2018-07-06 | 英属开曼群岛商錼创科技股份有限公司 | Display and its method for repairing and mending |
| CN107681034A (en) * | 2017-08-30 | 2018-02-09 | 天津三安光电有限公司 | It is micro-led and preparation method thereof |
| EP3460861A2 (en) * | 2017-09-21 | 2019-03-27 | InnoLux Corporation | Display device |
| WO2019184180A1 (en) * | 2018-03-29 | 2019-10-03 | 昆山工研院新型平板显示技术中心有限公司 | Drive backplane, micro light-emitting diode display panel and display |
| CN110518107A (en) * | 2018-05-21 | 2019-11-29 | 夏普株式会社 | Micro- light-emitting component, image-displaying member and forming method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113851073A (en) * | 2020-06-28 | 2021-12-28 | 中国科学院长春光学精密机械与物理研究所 | Miniature LED display device based on redundancy design and dynamic compensation |
| CN113851073B (en) * | 2020-06-28 | 2022-08-23 | 中国科学院长春光学精密机械与物理研究所 | Miniature LED display device based on redundancy design and dynamic compensation |
| CN112951874A (en) * | 2021-04-08 | 2021-06-11 | 长沙安牧泉智能科技有限公司 | Method for improving micro-led flexibility and interconnection reliability |
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