CN110958008A - High-voltage switch circuit - Google Patents
High-voltage switch circuit Download PDFInfo
- Publication number
- CN110958008A CN110958008A CN201911311168.3A CN201911311168A CN110958008A CN 110958008 A CN110958008 A CN 110958008A CN 201911311168 A CN201911311168 A CN 201911311168A CN 110958008 A CN110958008 A CN 110958008A
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- China
- Prior art keywords
- type dmos
- dmos tube
- tube
- electrode
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052744 lithium Inorganic materials 0.000 abstract description 2
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 238000012544 monitoring process Methods 0.000 description 3
- 101150110971 CIN7 gene Proteins 0.000 description 2
- 101150110298 INV1 gene Proteins 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical class [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 2
- 101100397044 Xenopus laevis invs-a gene Proteins 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 101100286980 Daucus carota INV2 gene Proteins 0.000 description 1
- 101100397045 Xenopus laevis invs-b gene Proteins 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/36—Arrangements for testing, measuring or monitoring the electrical condition of accumulators or electric batteries, e.g. capacity or state of charge [SoC]
- G01R31/385—Arrangements for measuring battery or accumulator variables
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Charge And Discharge Circuits For Batteries Or The Like (AREA)
Abstract
The invention belongs to the technical field of battery management, and particularly discloses a high-voltage switch circuit which comprises 8N-type DMOS (double-diffused metal oxide semiconductor) tubes, 6P-type DMOS tubes, 1 Zener diode and 2 phase inverters. The novel single-channel high-voltage switch circuit is adopted, so that the voltage of each battery is gated when the lithium batteries are connected in series, the current is not consumed from the battery end, and the high-voltage gating precision is improved.
Description
Technical Field
The invention belongs to the technical field of battery management, and particularly relates to a high-voltage switch circuit.
Background
Energy conservation and environmental protection become new targets for the development of the automobile industry, and a new generation of electric automobiles are used as novel vehicles with diversified energy configurations, and attract general attention of people and are greatly developed due to the advantages of zero emission, low noise and the like. However, the problem that restricts the development of the electric automobile is still the energy storage power battery and the application technology, the service life of the battery is prolonged, the energy efficiency and the operation reliability of the battery are improved, and the problem needs to be solved by an energy management system of the electric automobile. The battery management system mainly measures parameters such as battery voltage, current and temperature, wherein the battery voltage parameter is particularly important for the safety of the battery.
Disclosure of Invention
In order to solve the above problems, the present invention provides a high voltage switch circuit, which comprises a first N-type DMOS transistor, a second N-type DMOS transistor, a third N-type DMOS transistor, a fourth N-type DMOS transistor, a fifth N-type DMOS transistor, a sixth N-type DMOS transistor, a seventh N-type DMOS transistor, and an eighth N-type DMOS transistor; the first P-type DMOS tube, the second P-type DMOS tube, the third P-type DMOS tube, the fourth P-type DMOS tube, the fifth P-type DMOS tube and the sixth P-type DMOS tube; a Zener diode; a first inverter, a second inverter;
the grid electrode and the drain electrode of the first P-type DMOS tube, the grid electrode of the second P-type DMOS tube, the drain electrode of the fourth N-type DMOS tube and the drain electrode of the fifth N-type DMOS tube are connected with the drain electrode of the sixth N-type DMOS tube;
the grid electrode of the fourth N-type DMOS tube is connected with the output end of the first phase inverter;
the drain electrode of the second P-type DMOS tube, the drain electrode of the eighth N-type DMOS tube, the drain electrode of the seventh N-type DMOS tube, the grid electrode of the fifth P-type DMOS tube, the source electrode of the third P-type DMOS tube and the anode of the Zener diode are all connected with the grid electrode of the sixth P-type DMOS tube;
the grid electrode of the seventh N-type DMOS tube is connected with the output end of the second phase inverter;
the source electrode of the first N-type DMOS tube and the source electrode of the fourth P-type DMOS tube are connected with the source electrode of the second N-type DMOS tube; the source electrode of the fifth P-type DMOS tube, the grid electrode of the third P-type DMOS tube and the grid electrode of the third N-type DMOS tube are connected with the source electrode of the sixth P-type DMOS tube;
the source electrode of the third N-type DMOS tube is connected with the negative electrode of the Zener diode D1;
and the grid electrode of the first N-type DMOS tube, the grid electrode of the fourth P-type DMOS tube and the grid electrode of the second N-type DMOS tube are connected with the input end of the first phase inverter.
The invention has the beneficial effects that: according to the high-voltage switch circuit provided by the invention, when the lithium batteries are connected in series, the voltage of each battery can be gated, the highest voltage can reach 60V, the current is not consumed from the battery end, and the precision of high-voltage gating is improved; when the multi-channel switch is used in parallel, good voltage isolation can be realized, and mutual influence among channels is avoided. By controlling the magnitude of the bias current, the high-voltage switch can be quickly opened or closed, and the design requirement of the high-speed high-voltage switch is met.
Drawings
FIG. 1: a high voltage switching circuit diagram;
FIG. 2: the application reference number of the high-voltage switch circuit applied to a laminated lithium ion battery monitoring system is described as follows:
DN 1-first N-type DMOS tube; DN 2-second N-type DMOS tube; DN 3-third N-type DMOS tube; DN 4-fourth N-type DMOS tube; DN 5-fifth N-type DMOS tube; DN 6-sixth N-type DMOS tube; DN 7-seventh N-type DMOS tube; DN 8-eighth N-type DMOS tube; DP 1-first P-type DMOS tube; DP 2-second P-type DMOS tube; DP3 third P-type DMOS tube; DP 4-fourth P-type DMOS tube; DP 5-fifth P-type DMOS tube; DP 6-sixth P-type DMOS tube; d1-zener diode; INV1 — first inverter; INV 2-second inverter.
Detailed Description
The invention will be further explained with reference to the drawings and the embodiments.
As shown in fig. 1, the present embodiment provides a high voltage switch circuit, which includes a first N-type DMOS transistor DN1, a second N-type DMOS transistor DN2, a third N-type DMOS transistor DN3, a fourth N-type DMOS transistor DN4, a fifth N-type DMOS transistor DN5, a sixth N-type DMOS transistor DN6, a seventh N-type DMOS transistor DN7, and an eighth N-type DMOS transistor DN 8; a first P-type DMOS tube DP1, a second P-type DMOS tube DP2, a third P-type DMOS tube DP3, a fourth P-type DMOS tube DP4, a fifth P-type DMOS tube DP5, a sixth P-type DMOS tube DP 6; a zener diode D1; a first inverter INV1, a second inverter INV 2;
the grid and the drain of the first P-type DMOS tube DP1, the grid of the second P-type DMOS tube DP2, the drain of the fourth N-type DMOS tube DN4 and the drain of the fifth N-type DMOS tube are all connected with the drain of the sixth N-type DMOS tube DN 6; the gate of the fourth N-type DMOS transistor DN4 is connected to the output of the first inverter INV 1; the drain electrode of the second P-type DMOS tube DP2, the drain electrode of the eighth N-type DMOS tube DN8, the drain electrode of the seventh N-type DMOS tube DN7, the gate electrode of the fifth P-type DMOS tube DP5, the source electrode of the third P-type DMOS tube DP3 and the anode electrode of the Zener diode D1 are all connected with the gate electrode of the sixth P-type DMOS tube DP 6; the grid electrode of the seventh N-type DMOS tube DN7 is connected with the output end of the second inverter; the source electrode of the first N-type DMOS tube DN1 and the source electrode of the fourth P-type DMOS tube DP4 are connected with the source electrode of the second N-type DMOS tube; the source electrode of the fifth P-type DMOS tube DP5, the grid electrode of the third P-type DMOS tube DP3 and the grid electrode of the third N-type DMOS tube DN3 are all connected with the source electrode of the sixth P-type DMOS tube DP 6; the source of the third N-type DMOS tube DN3 is connected to the cathode of zener diode D1D 1; the grid electrode of the first N-type DMOS tube DN1, the grid electrode of the fourth P-type DMOS tube DP4 and the grid electrode of the second N-type DMOS tube are connected with the input end of a first inverter INV 1; the grid electrode of the eighth N-type DMOS tube DN8 is connected with the input end sw; the grid electrode of the fifth N-type DMOS tube is connected with the input end pd _ preg; the grid electrode of the sixth N-type DMOS tube DN6 and the input end of the second inverter INV2 are connected with the input end VN; the drain electrode of the first N-type DMOS tube DN1 and the drain electrode of the fifth P-type DMOS tube DP5 are connected with the input end IN; the drain electrode of the second N-type DMOS tube and the drain electrode of the sixth P-type DMOS tube DP6 are connected with the output end OUT; the source of the fourth N-type DMOS tube DN4 is connected with the input end Ioff; the source electrode of the fifth N-type DMOS tube is connected with the input end Ipd; the source electrode of the sixth N-type DMOS tube DN6 and the source electrode of the seventh N-type DMOS tube DN7 are connected with the input end Iquick; the source of the eighth N-type DMOS tube DN8 is connected to the input terminal Ion.
In the embodiment, the circuit is applied to a laminated lithium ion battery monitoring system, as shown in fig. 2, a high-voltage switch circuit switch is connected to one end of each of the stacked batteries Vcell0-Vcell6, the voltage of each of the batteries Vcell0-Vcell6 is sampled through the high-voltage switch circuit, and then the voltage is processed through an ADC, so that the real-time monitoring of the battery voltage is realized, and when the voltage of each battery is gated, the current is not consumed from the battery end, so that the sampling precision during the high-voltage gating is improved.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (1)
1. A high-voltage switch circuit is characterized by comprising a first N-type DMOS tube, a second N-type DMOS tube, a third N-type DMOS tube, a fourth N-type DMOS tube, a fifth N-type DMOS tube, a sixth N-type DMOS tube, a seventh N-type DMOS tube and an eighth N-type DMOS tube; the first P-type DMOS tube, the second P-type DMOS tube, the third P-type DMOS tube, the fourth P-type DMOS tube, the fifth P-type DMOS tube and the sixth P-type DMOS tube; a Zener diode; a first inverter, a second inverter;
the grid electrode and the drain electrode of the first P-type DMOS tube, the grid electrode of the second P-type DMOS tube, the drain electrode of the fourth N-type DMOS tube and the drain electrode of the fifth N-type DMOS tube are connected with the drain electrode of the sixth N-type DMOS tube;
the grid electrode of the fourth N-type DMOS tube is connected with the output end of the first phase inverter;
the drain electrode of the second P-type DMOS tube, the drain electrode of the eighth N-type DMOS tube, the drain electrode of the seventh N-type DMOS tube, the grid electrode of the fifth P-type DMOS tube, the source electrode of the third P-type DMOS tube and the anode of the Zener diode are all connected with the grid electrode of the sixth P-type DMOS tube;
the grid electrode of the seventh N-type DMOS tube is connected with the output end of the second phase inverter;
the source electrode of the first N-type DMOS tube and the source electrode of the fourth P-type DMOS tube are connected with the source electrode of the second N-type DMOS tube; the source electrode of the fifth P-type DMOS tube, the grid electrode of the third P-type DMOS tube and the grid electrode of the third N-type DMOS tube are connected with the source electrode of the sixth P-type DMOS tube;
the source electrode of the third N-type DMOS tube is connected with the negative electrode of the Zener diode D1;
and the grid electrode of the first N-type DMOS tube, the grid electrode of the fourth P-type DMOS tube and the grid electrode of the second N-type DMOS tube are connected with the input end of the first phase inverter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911311168.3A CN110958008A (en) | 2019-12-18 | 2019-12-18 | High-voltage switch circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911311168.3A CN110958008A (en) | 2019-12-18 | 2019-12-18 | High-voltage switch circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110958008A true CN110958008A (en) | 2020-04-03 |
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ID=69982606
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911311168.3A Pending CN110958008A (en) | 2019-12-18 | 2019-12-18 | High-voltage switch circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110958008A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080116751A1 (en) * | 2006-11-20 | 2008-05-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor switch circuit |
| CN105762893A (en) * | 2016-04-28 | 2016-07-13 | 西安航天民芯科技有限公司 | Low-power-consumption high-voltage twelve-channel selection system |
| CN106300508A (en) * | 2016-08-14 | 2017-01-04 | 天津大学 | High-voltage transmission for power-supply management system switchs |
| CN210839511U (en) * | 2019-12-18 | 2020-06-23 | 西安航天民芯科技有限公司 | High-voltage switch circuit |
-
2019
- 2019-12-18 CN CN201911311168.3A patent/CN110958008A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080116751A1 (en) * | 2006-11-20 | 2008-05-22 | Matsushita Electric Industrial Co., Ltd. | Semiconductor switch circuit |
| CN105762893A (en) * | 2016-04-28 | 2016-07-13 | 西安航天民芯科技有限公司 | Low-power-consumption high-voltage twelve-channel selection system |
| CN106300508A (en) * | 2016-08-14 | 2017-01-04 | 天津大学 | High-voltage transmission for power-supply management system switchs |
| CN210839511U (en) * | 2019-12-18 | 2020-06-23 | 西安航天民芯科技有限公司 | High-voltage switch circuit |
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