CN110957379A - Multi-grid electrode structure, heterojunction solar cell with same and preparation method of heterojunction solar cell - Google Patents
Multi-grid electrode structure, heterojunction solar cell with same and preparation method of heterojunction solar cell Download PDFInfo
- Publication number
- CN110957379A CN110957379A CN201911204242.1A CN201911204242A CN110957379A CN 110957379 A CN110957379 A CN 110957379A CN 201911204242 A CN201911204242 A CN 201911204242A CN 110957379 A CN110957379 A CN 110957379A
- Authority
- CN
- China
- Prior art keywords
- amorphous silicon
- heterojunction solar
- grid
- film
- main
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 49
- 239000010409 thin film Substances 0.000 claims abstract description 42
- 239000010408 film Substances 0.000 claims abstract description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 11
- 239000010703 silicon Substances 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 10
- 238000005245 sintering Methods 0.000 claims description 9
- 238000007650 screen-printing Methods 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 5
- 238000005240 physical vapour deposition Methods 0.000 claims description 5
- 239000002002 slurry Substances 0.000 abstract description 3
- 229910000679 solder Inorganic materials 0.000 abstract description 2
- 238000003466 welding Methods 0.000 description 11
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 10
- 238000012360 testing method Methods 0.000 description 9
- 230000002159 abnormal effect Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000003014 reinforcing effect Effects 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000013035 low temperature curing Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a multi-grid electrode structure on a heterojunction solar double-sided battery, wherein the multi-grid electrode comprises a plurality of main grids and a plurality of auxiliary grids, and the main grids and the auxiliary grids are vertically distributed; 4-20 bonding pads are arranged on the main grid, the number of lines of the main grid is 5-24, and the width of the main grid is 0.03-1.1 mm; heterojunction solar cell panel with above-mentioned multigate electrode structure includes: the multi-gate electrode structure further comprises the following structures: the substrate is a crystal silicon wafer; intrinsic amorphous silicon films are grown on the front side and the back side of the crystal silicon wafer; a doped amorphous silicon thin film grown on the intrinsic amorphous silicon thin film; a transparent conductive layer film grown on the doped amorphous silicon film; and a multi-gate electrode disposed on the transparent conductive film. According to the invention, the number of the main grids is increased and the width of the main grids is narrowed, so that the full contact between the solder strip and the main grids is realized for the heterojunction solar double-sided battery prepared in the later stage, and the high-standard tension is realized on the premise of not changing the characteristics of the slurry.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a multi-gate electrode structure, a heterojunction solar cell with the multi-gate electrode structure and a preparation method of the heterojunction solar cell.
Background
With the development of solar cell technology, the development of high-efficiency cells is more and more emphasized. A layer of hydrogenated amorphous silicon or hydrogenated microcrystalline silicon film grows on the c-si to form the heterojunction solar cell, the preparation of the p-n junction of the cell adopts a low-temperature process (<200 ℃) of film deposition, the energy consumption is reduced, the degradation of the performance of a silicon wafer in a high-temperature process is avoided, and the advantage of the high performance of a crystalline silicon material is exerted, so that the silicon heterojunction solar cell has the advantages of high efficiency, stability and low cost, and has a wider application prospect.
For the HJT battery, the multi-main grid can reduce the series resistance of the battery piece, better collect photon-generated carriers generated on the surface of the battery, improve the conversion efficiency of the battery, reduce the assembly risk caused by abnormal printing quality such as grid breakage of the battery and the like, reduce the path of transmitting the photon-generated current to the main grid line and improve the power of the assembly. But due to the influence of the components of the slurry and the low-temperature curing process, the heterojunction solar cell is more difficult to realize high performance indexes compared with the traditional crystalline silicon solar cell by welding tension as the main grid is narrowed. The quality of the tensile properties depends on the two substrate components and on a connection method, i.e. the welding material, the main grid and the welding process.
Therefore, how to design the structure of the multi-main grid to improve the welding effect is a problem that needs to be solved by those skilled in the art.
Disclosure of Invention
In view of the above, the present invention provides a multi-gate electrode structure, a heterojunction solar double-sided battery having the multi-gate electrode structure, and a manufacturing method thereof.
In order to achieve the purpose, the invention adopts the following technical scheme: a multi-grid electrode structure on a heterojunction solar double-sided battery is disclosed, wherein the multi-grid electrode comprises a plurality of main grids and a plurality of auxiliary grids, and the main grids and the auxiliary grids are vertically distributed; 4-20 bonding pads are arranged on the main grid, the number of lines of the main grid is 5-24, and the width of the main grid is 0.03-1.1 mm.
The invention has the beneficial effects that: according to the invention, by increasing the number of the main grids and narrowing the width of the main grids, for the heterojunction solar double-sided battery prepared in the later stage, the full contact between the solder strip and the main grids is realized, and the high-standard tensile force is realized on the premise of not changing the characteristics of the slurry.
Preferably, the number of lines of the sub-grid is 60-200, and the width of the sub-grid is 20-60 μm.
Preferably, the bonding pads are hollowed or provided with main grids.
The invention also provides a heterojunction solar cell panel, which is characterized by comprising: the multi-grid electrode structure further comprises the following structures: the substrate is a crystal silicon wafer; intrinsic amorphous silicon films are grown on the front side and the back side of the crystal silicon wafer; a doped amorphous silicon thin film grown on the intrinsic amorphous silicon thin film; a transparent conducting layer film grown on the doped amorphous silicon film; and a multi-gate electrode disposed on the transparent conductive film.
Preferably, the thickness of the transparent conductive film is 80-110nm, and the sheet resistance is 30-70 omega; the transparent conductive film is an ITO film, an AZO film or an ITiO film.
Preferably, the thickness of the intrinsic amorphous silicon thin film is 5-10 nm.
Preferably, the thickness of the doped amorphous silicon thin film is 5-20 nm.
Preferably, the crystalline silicon wafer is an N-type monocrystalline silicon wafer, and the thickness is 130-190 μm.
The invention also provides a preparation method of the heterojunction solar cell panel, which comprises the following steps:
step (1): texturing and cleaning a substrate;
step (2): growing intrinsic amorphous silicon thin films on the front side and the back side of the substrate in the step (1) by utilizing plasma chemical vapor deposition;
and (3): growing a doped amorphous silicon thin film on the intrinsic amorphous silicon thin film in the step (2) by utilizing plasma chemical vapor deposition;
and (4): growing a transparent conductive film on the doped amorphous silicon film in the step (3) by utilizing plasma chemical vapor deposition or physical vapor deposition magnetron sputtering;
and (5): forming a multi-gate electrode structure as set forth in claim 1 on the transparent conductive film in step (4) by screen printing; and sintering to obtain the heterojunction solar cell panel.
The invention has the beneficial effects that: according to the invention, the multi-grid electrode is printed on the transparent conductive films on the front surface and the back surface in a screen printing mode, so that the series resistance of the battery piece can be reduced, photo-generated carriers generated on the surface of the battery can be better collected, the conversion efficiency of the battery is improved, the assembly risk caused by abnormal printing quality such as grid breakage of the battery is reduced, the path of transmitting photo-generated current to the main grid line is reduced, and the assembly power is improved.
Preferably, the sintering temperature in the step (5) is 200 ℃ and the sintering time is 30 min.
According to the technical scheme, compared with the prior art, the heterojunction solar double-sided battery with the multi-grid electrode structure and the preparation method thereof are provided, the multi-main-grid process of the HJT battery is realized by changing the structure of the main grid, the contact area between the welding strip and the main grid after tin melting is increased, the problem that the welding tension force at present is difficult to reach the standard is solved, and the promotion effect is achieved on the industrialization process of the HJT battery.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a schematic diagram of a multi-gate electrode structure according to the present invention;
fig. 2 is a schematic view of the structure of the multi-gate electrode of example 1 provided in the present invention;
fig. 3 is a schematic view of the structure of the multi-gate electrode of example 2 provided in the present invention;
1. main grid, 2, bonding pad, 3, auxiliary grid, 4, welding reinforcing point.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
The multi-grid electrode structure on the heterojunction solar double-sided battery comprises a plurality of main grids 1 and a plurality of auxiliary grids 3, wherein the main grids 1 and the auxiliary grids 3 are vertically distributed; 14 bonding pads 2 are arranged on the front main grid 1, the number of lines of the main grid 1 is 12, the width of the main grid 1 is 0.1mm, the number of lines of the auxiliary grid 3 is 100, and the width of the auxiliary grid 3 is 30 micrometers; 14 bonding pads 2 are arranged on the back main grid 1 and are aligned with 14 bonding pads 2 on the front main grid 1, the number of lines of the auxiliary grid 3 is 120, and the width of the auxiliary grid 3 is 30 mu m.
A heterojunction solar panel, comprising:
taking an N-type monocrystalline silicon wafer with the thickness of 180 mu m as a substrate; intrinsic amorphous silicon thin films with the thickness of 10nm are grown on the front surface and the back surface of the monocrystalline silicon wafer; a doped amorphous silicon thin film with the thickness of 10nm is grown on the intrinsic amorphous silicon thin film; an ITO thin film with the thickness of 80nm and the square resistance of 60 omega is grown on the doped amorphous silicon thin film; and a multi-gate electrode disposed on the ITO film.
The preparation method of the heterojunction solar cell panel with the multi-gate electrode structure comprises the following steps:
step (1): texturing and cleaning an N-type monocrystal silicon wafer;
step (2): growing intrinsic amorphous silicon thin films on the front side and the back side of the N-type single crystal silicon wafer in the step (1) by utilizing plasma chemical vapor deposition;
and (3): growing doped amorphous silicon thin films on the intrinsic amorphous silicon thin films of the front and the back in the step (2) by utilizing plasma chemical vapor deposition;
and (4): growing ITO films on the doped amorphous silicon films on the front side and the back side in the step (3) by utilizing plasma chemical vapor deposition or physical vapor deposition magnetron sputtering;
and (5): forming front and back multi-grid electrodes on the front and back ITO thin films in the step (4) by screen printing, wherein the width of a front main grid 1 is 0.1mm, the number of the main grids 1 is 12, the number of pads 2 on each main grid 1 is 14, the line width of a sub-grid 3 is 30 microns, the number of lines is 100, 214 back main grid 1 pads are aligned with the front, no transverse sub-grid 3 exists between the pads 2, the line width of the sub-grid 3 is 30 microns, and the number of lines is 120; and sintering at 200 ℃ for 30min to obtain the heterojunction solar cell panel.
And (3) carrying out a module end welding tension test on the heterojunction solar panel, wherein the tension test is reverse 180 ℃ stripping, and the quantity of the bonding pads 2 with the front and back tension test value of more than 0.6N accounts for 40-45% of the total quantity.
Example 2
The multi-grid electrode structure on the heterojunction solar double-sided battery comprises a plurality of main grids 1 and a plurality of auxiliary grids 3, wherein the main grids 1 and the auxiliary grids 3 are vertically distributed; 14 bonding pads 2 are arranged on the front main grid 1, the number of lines of the main grid 1 is 14, the width of the main grid 1 is 0.1mm, the number of lines of the auxiliary grid 3 is 100, and the width of the auxiliary grid 3 is 30 micrometers; 14 bonding pads 2 are arranged on the back main grid 1 and are aligned with 14 bonding pads 2 on the front main grid 1, the number of lines of the auxiliary grid 3 is 120, and the width of the auxiliary grid 3 is 30 mu m.
A heterojunction solar panel, comprising:
taking an N-type monocrystalline silicon wafer with the thickness of 180 mu m as a substrate; intrinsic amorphous silicon thin films with the thickness of 10nm are grown on the front surface and the back surface of the monocrystalline silicon wafer; a doped amorphous silicon thin film with the thickness of 10nm is grown on the intrinsic amorphous silicon thin film; an ITO thin film with the thickness of 80nm and the square resistance of 60 omega is grown on the doped amorphous silicon thin film; and a multi-gate electrode disposed on the ITO film.
The preparation method of the heterojunction solar cell panel with the multi-gate electrode structure comprises the following steps:
step (1): texturing and cleaning an N-type monocrystal silicon wafer;
step (2): growing intrinsic amorphous silicon thin films on the front side and the back side of the N-type single crystal silicon wafer in the step (1) by utilizing plasma chemical vapor deposition;
and (3): growing doped amorphous silicon thin films on the intrinsic amorphous silicon thin films of the front and the back in the step (2) by utilizing plasma chemical vapor deposition;
and (4): growing ITO films on the doped amorphous silicon films on the front side and the back side in the step (3) by utilizing plasma chemical vapor deposition or physical vapor deposition magnetron sputtering;
and (5): forming front and back multi-grid electrodes on the front and back ITO films in the step (4) by screen printing, wherein the width of a front main grid 1 is 0.1mm, the number of the main grids 1 is 12, the number of pads 2 on each main grid 1 is 14, main grids 1 and 6 welding reinforcing points 4 are arranged between the pads 2, the line width of a secondary grid 3 is 30 mu m, the number of lines is 100, 214 pads of the back main grid 1 are aligned with the front, the line width of the secondary grid 3 is 30 mu m, and the number of lines is 120; and sintering at 200 ℃ for 30min to obtain the heterojunction solar cell panel.
And (3) carrying out a module end welding tension test on the heterojunction solar panel, wherein the tension test is reverse 180 ℃ stripping, and the quantity of the bonding pads 2 with the front and back tension test value of more than 0.6N accounts for more than 80% of the total quantity.
Comparative example
The multi-grid electrode structure on the heterojunction solar double-sided battery comprises a plurality of main grids 1 and a plurality of auxiliary grids 3, wherein the main grids 1 and the auxiliary grids 3 are vertically distributed; 14 bonding pads 2 are arranged on the front main grid 1, the number of lines of the main grid 1 is 14, the width of the main grid 1 is 0.1mm, the number of lines of the auxiliary grid 3 is 100, and the width of the auxiliary grid 3 is 30 micrometers; 14 bonding pads 2 are arranged on the back main grid 1 and are aligned with 14 bonding pads 2 on the front main grid 1, the number of lines of the auxiliary grid 3 is 120, and the width of the auxiliary grid 3 is 30 mu m.
A heterojunction solar panel, comprising:
taking an N-type monocrystalline silicon wafer with the thickness of 180 mu m as a substrate; intrinsic amorphous silicon thin films with the thickness of 10nm are grown on the front surface and the back surface of the monocrystalline silicon wafer; a doped amorphous silicon thin film with the thickness of 10nm is grown on the intrinsic amorphous silicon thin film; an ITO thin film with the thickness of 80nm and the square resistance of 60 omega is grown on the doped amorphous silicon thin film; and a multi-gate electrode disposed on the ITO film.
The preparation method of the heterojunction solar cell panel with the multi-gate electrode structure comprises the following steps:
step (1): texturing and cleaning an N-type monocrystal silicon wafer;
step (2): growing intrinsic amorphous silicon thin films on the front side and the back side of the N-type single crystal silicon wafer in the step (1) by utilizing plasma chemical vapor deposition;
and (3): growing doped amorphous silicon thin films on the intrinsic amorphous silicon thin films of the front and the back in the step (2) by utilizing plasma chemical vapor deposition;
and (4): growing ITO films on the doped amorphous silicon films on the front side and the back side in the step (3) by utilizing plasma chemical vapor deposition or physical vapor deposition magnetron sputtering;
and (5): forming front and back multi-grid electrodes on the front and back ITO thin films in the step (4) by screen printing, wherein the width of a front main grid 1 is 0.1mm, the number of the main grids 1 is 12, the number of pads 2 on each main grid 1 is 14, the line width of a secondary grid 3 is 30 microns, the number of lines is 100, 214 pads of the back main grid 1 are aligned with the front, the line width of the secondary grid 3 is 30 microns, and the number of lines is 120; and sintering at 200 ℃ for 30min to obtain the heterojunction solar cell panel.
And (3) carrying out a module end welding tension test on the heterojunction solar panel, wherein the tension test is reverse 180 ℃ stripping, and the quantity of the bonding pads with the front and back tension test value of more than 0.6N accounts for 20-25% of the total quantity.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (9)
1. A multi-grid electrode structure on a heterojunction solar double-sided battery is characterized in that the multi-grid electrode comprises a plurality of main grids and a plurality of auxiliary grids, and the main grids and the auxiliary grids are vertically distributed;
4-20 bonding pads are arranged on the main grid, the number of lines of the main grid is 5-24, and the width of the main grid is 0.03-1.1 mm.
2. The multi-grid electrode structure on a heterojunction solar double-sided cell of claim 1, wherein the number of lines of the sub-grid is 60-200, and the width of the sub-grid is 20-60 μm.
3. A heterojunction solar panel, comprising: the multi-gate electrode structure of any one of claims 1-2, further comprising the structure:
the substrate is a crystal silicon wafer;
intrinsic amorphous silicon films are grown on the front side and the back side of the crystal silicon wafer;
a doped amorphous silicon thin film grown on the intrinsic amorphous silicon thin film;
a transparent conducting layer film grown on the doped amorphous silicon film;
and a multi-gate electrode disposed on the transparent conductive film.
4. The heterojunction solar panel of claim 3, wherein the transparent conductive film has a thickness of 80-110nm and a sheet resistance of 30-70 Ω; the transparent conductive film is an ITO film, an AZO film or an ITiO film.
5. A heterojunction solar panel as claimed in claim 3, wherein said intrinsic amorphous silicon thin film has a thickness of 5-10 nm.
6. A heterojunction solar panel as claimed in claim 3, wherein said doped amorphous silicon thin film has a thickness of 5-20 nm.
7. The heterojunction solar panel of claim 3, wherein the crystalline silicon wafer is an N-type single crystalline silicon wafer and has a thickness of 130-190 μm.
8. A preparation method of a heterojunction solar cell panel is characterized by comprising the following steps:
step (1): texturing and cleaning a substrate;
step (2): growing intrinsic amorphous silicon thin films on the front side and the back side of the substrate in the step (1) by utilizing plasma chemical vapor deposition;
and (3): growing a doped amorphous silicon thin film on the intrinsic amorphous silicon thin film in the step (2) by utilizing plasma chemical vapor deposition;
and (4): growing a transparent conductive film on the doped amorphous silicon film in the step (3) by utilizing plasma chemical vapor deposition or physical vapor deposition magnetron sputtering;
and (5): forming the multi-gate electrode structure of any one of claims 1-2 on the transparent conductive film in step (4) by screen printing; and sintering to obtain the heterojunction solar cell panel.
9. The method as claimed in claim 8, wherein the sintering temperature in step (5) is 180-200 ℃ and the sintering time is 25-33 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911204242.1A CN110957379A (en) | 2019-11-29 | 2019-11-29 | Multi-grid electrode structure, heterojunction solar cell with same and preparation method of heterojunction solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911204242.1A CN110957379A (en) | 2019-11-29 | 2019-11-29 | Multi-grid electrode structure, heterojunction solar cell with same and preparation method of heterojunction solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110957379A true CN110957379A (en) | 2020-04-03 |
Family
ID=69979143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911204242.1A Pending CN110957379A (en) | 2019-11-29 | 2019-11-29 | Multi-grid electrode structure, heterojunction solar cell with same and preparation method of heterojunction solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110957379A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112117335A (en) * | 2020-09-29 | 2020-12-22 | 江苏爱康能源研究院有限公司 | Method for printing welding points on MBB main gate of crystalline silicon heterojunction solar cell |
| WO2024104447A1 (en) * | 2022-11-18 | 2024-05-23 | 通威太阳能（安徽）有限公司 | Preparation method for solar cell, and solar cell |
| CN118693174A (en) * | 2024-07-30 | 2024-09-24 | 苏州小牛自动化设备有限公司 | Photovoltaic cell |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201838602U (en) * | 2010-10-19 | 2011-05-18 | 温州昌隆光伏科技有限公司 | Crystalline silicon solar battery with segmented grid lines |
| CN203932074U (en) * | 2014-06-03 | 2014-11-05 | 太极能源科技（昆山）有限公司 | A kind of electrode structure at right side of solar cell |
| CN204464295U (en) * | 2015-01-27 | 2015-07-08 | 苏州阿特斯阳光电力科技有限公司 | A kind of solar cell |
| CN206098402U (en) * | 2016-07-27 | 2017-04-12 | 福建金石能源有限公司 | Heterojunction solar cell and module thereof |
| CN108713039A (en) * | 2016-02-22 | 2018-10-26 | 汉高股份有限及两合公司 | The application of electrically conductive composition and the composition |
| CN108899375A (en) * | 2018-06-27 | 2018-11-27 | 研创应用材料（赣州）股份有限公司 | A kind of preparation method of silicon based hetero-junction photovoltaic cell |
| CN208781860U (en) * | 2018-09-29 | 2019-04-23 | 浙江正泰太阳能科技有限公司 | More main grid solar battery sheets |
| CN209071360U (en) * | 2018-11-23 | 2019-07-05 | 浙江昱辉阳光能源江苏有限公司 | A kind of novel more main grid solar batteries |
-
2019
- 2019-11-29 CN CN201911204242.1A patent/CN110957379A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201838602U (en) * | 2010-10-19 | 2011-05-18 | 温州昌隆光伏科技有限公司 | Crystalline silicon solar battery with segmented grid lines |
| CN203932074U (en) * | 2014-06-03 | 2014-11-05 | 太极能源科技（昆山）有限公司 | A kind of electrode structure at right side of solar cell |
| CN204464295U (en) * | 2015-01-27 | 2015-07-08 | 苏州阿特斯阳光电力科技有限公司 | A kind of solar cell |
| CN108713039A (en) * | 2016-02-22 | 2018-10-26 | 汉高股份有限及两合公司 | The application of electrically conductive composition and the composition |
| CN206098402U (en) * | 2016-07-27 | 2017-04-12 | 福建金石能源有限公司 | Heterojunction solar cell and module thereof |
| CN108899375A (en) * | 2018-06-27 | 2018-11-27 | 研创应用材料（赣州）股份有限公司 | A kind of preparation method of silicon based hetero-junction photovoltaic cell |
| CN208781860U (en) * | 2018-09-29 | 2019-04-23 | 浙江正泰太阳能科技有限公司 | More main grid solar battery sheets |
| CN209071360U (en) * | 2018-11-23 | 2019-07-05 | 浙江昱辉阳光能源江苏有限公司 | A kind of novel more main grid solar batteries |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112117335A (en) * | 2020-09-29 | 2020-12-22 | 江苏爱康能源研究院有限公司 | Method for printing welding points on MBB main gate of crystalline silicon heterojunction solar cell |
| WO2024104447A1 (en) * | 2022-11-18 | 2024-05-23 | 通威太阳能（安徽）有限公司 | Preparation method for solar cell, and solar cell |
| CN118693174A (en) * | 2024-07-30 | 2024-09-24 | 苏州小牛自动化设备有限公司 | Photovoltaic cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2011024534A1 (en) | Multi-junction photoelectric converter, integrated multi-junction photoelectric converter, and method for manufacturing same | |
| CN104465892A (en) | Method for manufacturing photovoltaic modules interconnected on same sides of adjacent solar cells in solar cell string | |
| US20120222731A1 (en) | Heterojunction Solar Cell Having Amorphous Silicon Layer | |
| CN213340395U (en) | Metal mesh grid interconnection structure | |
| CN110957379A (en) | Multi-grid electrode structure, heterojunction solar cell with same and preparation method of heterojunction solar cell | |
| CN113054043A (en) | Single-side light-receiving heterojunction photovoltaic cell grid line electrode structure | |
| CN102623574A (en) | Solar cell module with MWT (Metal Wrap Through) structure and manufacturing method of solar cell module | |
| TW202046510A (en) | Thin film photovoltaic cell series structure and preparation technology of thin film photovoltaic cell series structure | |
| CN110690308A (en) | Back contact heterojunction solar cell and module thereof | |
| EP4345914A1 (en) | Heterojunction cell, and photovoltaic module cell string and manufacturing method therefor | |
| CN111129179A (en) | Heterojunction battery and preparation method thereof | |
| CN110729377A (en) | Preparation method of double-sided power generation heterojunction solar cell and tile-stacked module thereof | |
| CN112768549A (en) | HJT battery with high photoelectric conversion efficiency and preparation method thereof | |
| CN111403554A (en) | Preparation method of solar cell and solar cell obtained by preparation method | |
| JP6115806B2 (en) | Photovoltaic device | |
| CN211238272U (en) | Crystalline silicon/amorphous silicon heterojunction battery | |
| CN112466989A (en) | Preparation process of heterojunction solar cell | |
| CN114361281A (en) | Double-sided heterojunction solar cell and photovoltaic module | |
| CN208507687U (en) | Interdigital back contact heterojunction monocrystalline silicon battery | |
| US11984518B2 (en) | Photovoltaic module | |
| WO2023011209A1 (en) | Preparation method for photovoltaic assembly and photovoltaic assembly | |
| CN212783486U (en) | Double-sided heterojunction solar cell and photovoltaic module | |
| KR101062486B1 (en) | Low degradation silicon thin film photovoltaics using heating element | |
| EP4213226A1 (en) | Solar cell and manufacturing method therefor | |
| CN213184316U (en) | Heterojunction solar cell and photovoltaic module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200403 |
|
| RJ01 | Rejection of invention patent application after publication |