CN110904437B - Film preparation equipment and reaction chamber thereof - Google Patents
Film preparation equipment and reaction chamber thereof Download PDFInfo
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- CN110904437B CN110904437B CN201811076455.6A CN201811076455A CN110904437B CN 110904437 B CN110904437 B CN 110904437B CN 201811076455 A CN201811076455 A CN 201811076455A CN 110904437 B CN110904437 B CN 110904437B
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 39
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000007789 gas Substances 0.000 claims abstract description 64
- 239000012495 reaction gas Substances 0.000 claims abstract description 39
- 230000002093 peripheral effect Effects 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 31
- 238000011068 loading method Methods 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000005086 pumping Methods 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 10
- 229910052799 carbon Inorganic materials 0.000 description 10
- 239000007921 spray Substances 0.000 description 6
- 238000000605 extraction Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- -1 silicon carbide nitride Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45559—Diffusion of reactive gas to substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a film preparation device and a reaction chamber thereof. Comprises a cavity and an object carrying platform arranged in the cavity; the cavity comprises: the air inlet is arranged above the carrying platform and is used for inputting reaction gas; the cylindrical side wall is provided with a plurality of exhaust holes which are positioned at the same horizontal height, are formed by the concave inner peripheral wall of the side wall and are distributed around the carrying platform; and an exhaust runner communicated with each exhaust hole; when the exhaust runner is used for exhausting, the gas above the carrying platform uniformly flows from the middle to the periphery. The film prepared by the reaction chamber is more uniform.
Description
Technical Field
The present invention relates generally to the field of semiconductor processing, and more particularly to a thin film fabrication apparatus and a reaction chamber thereof.
Background
In the semiconductor industry today, hard masks are mainly used in multiple lithography processes, where multiple photoresist images are first transferred onto a hard mask, and then the final pattern is transferred onto the substrate by hard mask etching.
To cope with the demand for narrower critical dimensions of integrated circuits, higher resolution patterns are required to be manufactured, and the photoresist thickness must be correspondingly reduced to increase the accuracy of pattern transfer. Therefore, a need exists for a material with a high selectivity as a hard mask to reduce photoresist thickness, particularly for pattern transfer at high aspect ratios for applications in advanced processes below 70 nm.
In the prior art, films such as silicon nitride, silicon carbide nitride, amorphous silicon, carbon films and the like can be used as hard masks. However, the carbon film is used for the photoresist pattern transfer layer or the hard mask layer with high aspect ratio because the manufacturing cost of the carbon film is low for the substrate silicon oxide film or the silicon oxide film doped with boron, phosphorus or fluorine.
However, the uniformity of the thickness of the carbon film grown in the prior art is low, resulting in low yield of the final product.
The above information disclosed in the background section is only for enhancement of understanding of the background of the invention and therefore it may contain information that does not form the prior art that is already known to a person of ordinary skill in the art.
Disclosure of Invention
In the summary, a series of concepts in a simplified form are introduced, which will be further described in detail in the detailed description. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
The inventors have found through extensive practice that the non-uniformity in the thickness of the carbon film is caused by the non-uniform flow of the reactant gases over the wafer. As shown in fig. 1, fig. 1 is a schematic cross-sectional view of a reaction chamber 1a of a carbon thin film production apparatus. The reaction chamber 1a includes a cylinder 11a, a top wall 13a, a bottom wall 12a, an evacuation ring, and a stage 14a. The top wall 13a and the bottom wall 12a block both ends of the column cylinder 11a, respectively. The cylinder 11a is vertically arranged, the top wall 13a is positioned above the cylinder 11a, and the bottom wall 12a is positioned at the bottom of the cylinder 11a. The top wall 13a is provided with an air inlet 131a. The gas inlet 131a is for entering a reaction gas. The stage 14a is provided in the cylinder 11a. The stage 14a is used for placing the wafer 2. The cylinder 11a is provided with an annular groove 112a formed by recessing the inner wall inward. The pumping ring is disposed coaxially with the annular groove 112a, and covers the opening in the annular groove 112a. The inner wall of the annular groove 112a and the air extraction ring 113a enclose an annular flow passage 111a. As shown in fig. 2, the pumping ring 113a is provided with a plurality of exhaust holes 114a uniformly distributed. The exhaust holes 114a are each communicated with the annular flow passage 111a. The cylinder 11a is also provided with an air outlet hole 115a. One end of the air outlet hole 115a is communicated with the annular flow passage 111a, and the other end is communicated with the vacuum pump. After the vacuum pump is started, the gas in the cylinder 11a is discharged through the gas discharge hole 114a, the annular flow passage 111a, and the gas outlet hole 115a in this order. However, since some of the exhaust holes 114a are close to the exhaust hole 115a and some of the exhaust holes 114a are far from the exhaust hole 115a, the exhaust holes 114a close to the exhaust hole 115a are fast in air suction, and the exhaust holes 114a far from the exhaust hole 115a are slow in air suction, so that the flow rate of the reactive gas on one side of the flow of the reactive gas on the surface of the wafer 2 is fast, and the flow rate on the other side is slow, thereby resulting in that the reactive gas is thick on one side and thin on one side of the thickness of the film deposited on the surface of the wafer 2.
One technical problem to be solved by the present invention is how to make the thickness of the thin film formed on the wafer more uniform.
It is a primary object of the present invention to overcome at least one of the above-mentioned drawbacks of the prior art, and to provide a reaction chamber of a thin film preparation apparatus, comprising a chamber body and a carrier platform arranged in the chamber body; the cavity comprises: the air inlet is arranged above the carrying platform and is used for inputting reaction gas; the cylindrical side wall is provided with a plurality of exhaust holes which are positioned at the same horizontal height, are formed by the concave inner peripheral wall of the side wall and are distributed around the carrying platform; and an exhaust runner communicated with each exhaust hole;
when the exhaust runner is used for exhausting, the gas above the carrying platform uniformly flows from the middle to the periphery.
According to one embodiment of the invention, the exhaust runner comprises an annular runner arranged in the side wall and two first channels respectively communicated with two symmetrical sides of the annular runner; a plurality of the exhaust ports each extend from the inner peripheral wall to the annular flow passage.
According to one embodiment of the invention, the cavity further comprises a bottom wall covering the bottom of the side wall, two of the first passages extending downwardly from the annular flow passage to the bottom wall;
The exhaust runner further comprises an air outlet arranged in the middle of the bottom wall and two second channels which are arranged in the side wall and extend from the two first channels to the air outlet respectively.
According to one embodiment of the invention, the plurality of exhaust holes are equally divided into two groups of exhaust holes respectively close to the two second channels; in each group of exhaust holes, the closer to the corresponding second channel, the larger the distance between two adjacent exhaust holes.
According to one embodiment of the invention, in each set of vent holes, the closer to its corresponding second channel, the smaller the aperture of the vent hole.
According to one embodiment of the invention, the cavity further comprises a top wall covering the top end of the side wall, and the air inlet is provided in the middle of the top wall.
According to one embodiment of the invention, the plurality of exhaust holes uniformly encircle the carrying platform; the cavity further comprises: the top wall covers the top end of the side wall, and the air inlet is arranged in the middle of the top wall and faces the carrying platform; a bottom wall covering the bottom end of the side wall, wherein an air outlet for exhausting air in the cavity is arranged below the middle part of the bottom wall; the wall surface of the cavity is also provided with an exhaust runner which is communicated with the exhaust holes and the air outlets, and the paths of the air in the cavity from each exhaust hole to the air outlets through the exhaust runner are equal.
According to one embodiment of the invention, the exhaust runner includes a first runner disposed in the side wall and a second runner disposed in the bottom wall; the first flow passage extends from each vent hole to the second flow passage, and the second flow passage extends from the first flow passage to the air outlet.
According to an embodiment of the invention, the first flow channels are straight flow channels extending in an axial direction of the side wall, and the second flow channels are straight flow channels extending from each first flow channel from a radial direction to the air outlet.
According to one embodiment of the invention, the first flow passage is an annular chamber with one end communicating with each exhaust hole and the other end communicating with the second flow passage.
According to one embodiment of the invention, the second flow channel is a disc-shaped chamber, the end part of the first flow channel is connected with the edge of the second flow channel, and the air outlet is communicated with the middle part of the second flow channel.
According to one embodiment of the invention, the cross section of the vent hole is elliptical with the long axis horizontally arranged.
According to one embodiment of the invention, the cross-section has an area of 0.5 pi to 2 pi cm 2.
According to one embodiment of the invention, the side wall is cylindrical, the carrying platform is a circular plate, and the side wall and the carrying platform are coaxially arranged.
According to one embodiment of the invention, the vent hole is flush with the carrying surface of the carrying platform.
The invention also provides a thin film preparation device, which comprises the reaction chamber.
According to the technical scheme, the reaction chamber has the advantages and positive effects that:
The reaction gas above the carrying platform can flow from the middle to the periphery uniformly, when the wafer is loaded on the carrying platform, the reaction gas can flow from the middle of the wafer to the periphery uniformly, when the reaction gas flows on the surface of the wafer, part of the reaction gas is deposited on the surface of the wafer, the speed of depositing the film on the wafer is the same, and the thickness of the film generated on the wafer is more uniform.
Drawings
Various objects, features and advantages of the present invention will become more apparent from the following detailed description of the preferred embodiments of the invention, when taken in conjunction with the accompanying drawings. The drawings are merely exemplary illustrations of the invention and are not necessarily drawn to scale. In the drawings, like reference numerals refer to the same or similar parts throughout. Wherein:
FIG. 1 shows a schematic structural view of a reaction chamber of a carbon thin film production apparatus;
FIG. 2 shows a schematic structural view of an air pumping ring of a carbon thin film manufacturing apparatus;
FIG. 3 shows a schematic view in full section of a reaction chamber in a first embodiment of the invention;
FIG. 4 is a schematic perspective view showing an exhaust runner from obliquely above in a first embodiment of the present invention;
FIG. 5 is a schematic perspective view showing the exhaust runner from obliquely below in accordance with the first embodiment of the present invention;
FIG. 6 is a schematic perspective view of an extraction ring according to a first embodiment of the invention;
FIG. 7 shows a schematic diagram of a reaction chamber in a second embodiment of the invention in full section;
FIG. 8 is a schematic perspective view showing an exhaust runner from obliquely above in a second embodiment of the present invention;
Fig. 9 is a schematic perspective view showing a bottom view of an exhaust runner from obliquely below in a second embodiment of the present invention;
FIG. 10 is a schematic perspective view of an extraction ring in an embodiment of the invention;
FIG. 11 is a schematic perspective view showing an exhaust runner from obliquely above in a third embodiment of the present invention;
Fig. 12 is a schematic perspective view showing an exhaust runner from obliquely below in a third embodiment of the present invention.
Wherein reference numerals are as follows:
1a, a reaction chamber; 11a, a cylinder; 111a, an annular flow passage; 112a, an annular groove; 113a, an air extraction ring; 114a, exhaust holes; 115a, air outlet holes; 12a, a bottom wall; 13a, a top wall; 131a, an air inlet; 14a, an objective table; 2. a wafer;
1b, a reaction chamber; 10b, cavity; 11b, sidewalls; 110b, a cylinder; 112b, an annular groove; 113b, an air extraction ring; 114b, exhaust holes; 115b, an air outlet; 116b, an exhaust runner; 117b, first channel; 118b, a second channel; 119b, annular flow passage; 12b, a bottom wall; 13b, a top wall; 131b, an air inlet; 14b, a carrying platform; 15b, spray heads;
1. a reaction chamber; 10. a cavity; 11. a sidewall; 110. a cylinder; 112. an annular groove; 113. a gas pumping ring; 114. an exhaust hole; 115. an air outlet; 116. an exhaust runner; 117. a first flow passage; 118. a second flow passage; 117c, first flow channel; 118c, a second flow channel; 12. a bottom wall; 13. a top wall; 131. an air inlet; 14. a carrying platform; 15. a spray head.
Detailed Description
Example embodiments will now be described more fully with reference to the accompanying drawings. However, the exemplary embodiments can be embodied in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the example embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar structures, and thus detailed descriptions thereof will be omitted.
Example 1
As shown in fig. 3, fig. 3 shows a reaction chamber 1b of a semiconductor processing apparatus. The reaction chamber 1b comprises a cavity 10b and a load carrier 14b. A load platform 14b is disposed within the cavity 10 b. The top of the load carrying platform 14b is provided with a horizontal carrying surface. The carrying surface is used for carrying the wafer 2 to be processed.
The cavity 10b includes a bottom wall 12b, side walls 11b, and a top wall 13b. The side wall 11b is provided in a cylindrical structure. The side wall 11b is disposed vertically. The top wall 13b and the bottom wall 12b are respectively provided at the top end and the bottom end of the side wall 11b, and the bottom wall 12b, the side wall 11b and the top wall 13b enclose a cavity structure.
The side wall 11b has an interior cavity therein, which is preferably a cylindrical cavity. A load carrier 14b is disposed within the interior cavity. Support columns supporting the load platform 14b are provided below the load platform 14b. The side wall 11b is preferably a cylindrical structure, the carrying platform 14b is preferably a circular plate shape, and the carrying platform 14b is coaxially arranged with the side wall 11 b. The side wall 11b is provided with a plurality of exhaust holes 114b. The exhaust hole 114b is formed by radially recessing the inner peripheral wall of the side wall 11 b. The plurality of exhaust holes 114b are sequentially arranged around the loading platform.
The top wall 13b may be provided as a plate-like structure, preferably a circular plate. The top wall 13b overlies the top end of the side wall 11b, covering the top end of the side wall 11 b. The middle portion of the top wall 13b is provided with an air inlet 131b. The outward end of the gas inlet 131b is connected to a source of reactant gas via a pipe. The reaction gas source may be a tank containing the reaction gas or a generator for producing the reaction gas. The gas inlet 131b is used to introduce a reaction gas into the chamber 10 b. The gas inlet 131b is disposed downward so that the reaction gas is downwardly ejected. The loading platform 14b is disposed below the air inlet 131b. The air inlet 131b is aligned with the middle of the load platform 14 b.
The bottom wall 12b is provided at the bottom end of the side wall 11b and covers the bottom end of the side wall 11 b. The bottom wall 12b may be provided in a flat plate structure, preferably a circular plate. An air outlet 115b is provided below the middle of the bottom wall 12 b. The gas outlet 115b is for discharging the gas in the chamber 10 b. The air outlet 115b is used for connecting an air extracting device, for example, the air outlet 115b is communicated with a vacuum pump through a pipeline. The evacuation device is activated to evacuate the gas to create a negative pressure at the gas outlet 115b.
Referring to fig. 4 and 5, an exhaust flow passage 116b communicating the exhaust hole 114b and the air outlet 115b is further provided in the wall surface of the chamber 10 b. The exhaust flow passage 116b includes an annular flow passage 119b, two first passages 117b, and two second passages 118b. The annular flow passage 119b is provided in an annular shape, preferably an annular shape. The annular flow passage 119b and the first passage 117b are both disposed in the side wall 11b and the second passage 118b is disposed in the bottom wall 12 b. Each vent hole 114b extends from the inner peripheral wall of the side wall 11b to the annular flow passage 119b. Both first passages 117b communicate with the annular flow passage 119b. The two first flow passages 117b are disposed on opposite sides of the sidewall 11b and communicate with opposite sides of the annular flow passage 119b. Two second passages 118b extend from the two first passages 117b to the air outlets 115b, respectively.
When the air extractor is started, the air in the cavity 10b sequentially passes through the air exhaust hole 114b, the annular flow passage 119b, the first passage 117b and the second passage 118b, and finally is exhausted from the air outlet 115 b.
The gas inlet 131b inputs a reaction gas into the chamber 10b, and after the reaction gas is inputted into the chamber 10b from the gas inlet 131b, the reaction gas is sprayed to the wafer 2b of the loading platform, and when the reaction gas flows over the surface of the wafer 2b, a part of the reaction gas is deposited on the surface of the wafer 2b, and another part of the reaction gas reaches the gas outlet 115b through the gas outlet 114b via the gas exhaust flow channels through the plurality of gas exhaust holes 114b, and is outputted from the gas outlet 115 b.
Since the two first passages 117b are symmetrically disposed on the annular flow passage 119b, the two first passages 117b draw air from the symmetrical portion of the annular flow passage 119b by the same suction force, so that the speed of drawing air from each exhaust hole 114b is relatively more uniform, and further, the reaction gas above the carrying platform 14b can flow from the middle to the periphery uniformly. When the wafer 2 is loaded on the loading platform 14b, the reaction gas can uniformly flow from the middle part of the wafer 2 to the periphery, the speed of depositing the film on the wafer 2 is the same, and the thickness of the film formed on the wafer 2 is more uniform.
Further, referring to fig. 6, the plurality of exhaust holes 114b are equally divided into two groups of exhaust holes respectively adjacent to the two second passages 118 b. Each set of vent holes corresponds to its closest second channel 118 b. In each set of vent holes, the closer to its corresponding second channel 118b, the greater the spacing between adjacent two vent holes 114 b.
In each set of vents, the closer to the vent 114b of its corresponding second channel 118b, the less the air pressure within the vent 114b, the faster the vent 114b vents. After the exhaust holes 114b are arranged in the above manner, the exhaust holes 114b can exhaust air more uniformly in the circumferential direction of the carrying platform 14b, so that the reaction gas above the carrying platform 14b can flow from the middle to the periphery more uniformly, and the thickness of the film generated on the wafer 2 is also more uniform.
Further, in each set of vents, the closer to its corresponding second channel 118b, the smaller the aperture of the vent 114 b.
In each set of vent holes, the closer to the vent hole 114b of its corresponding second channel 118b, the less the air pressure within the vent hole 114b, and the closer to the second channel 118b the vent hole 114b is arranged to have a smaller aperture, the more closely each vent hole 114b is drawn. Therefore, after the exhaust holes 114b are arranged in the above manner, the exhaust holes 114b can exhaust air more uniformly in the circumferential direction of the carrying platform 14b, so that the reaction gas above the carrying platform 14b can flow more uniformly from the middle to the periphery, and the thickness of the film generated on the wafer 2 is more uniform.
Further, as shown in fig. 4 and 5, the first channel 117b and the second channel 118b are both direct channels. Each first passage 117b extends from the annular flow passage 119b to its corresponding second passage 118b along the axial direction of the side wall 11 b. Each second passage 118b extends from an end of the first passage 117b opposite thereto to the air outlet 115b.
Further, the side wall 11b is cylindrical, the carrying platform is a circular plate, and the side wall 11b and the carrying platform are coaxially arranged. After the carrying platform and the side wall 11b are coaxially arranged, the distance between the carrying platform and the side wall 11b is the same, and the air flow is more uniformly distributed in all directions when flowing from the carrying platform to the exhaust hole 114b of the side wall 11b, so that the thickness of the film grown on the surface of the wafer 2 is more uniform.
Further, the vent 114b is flush with the load-bearing surface of the load-bearing platform 14 b. When the exhaust hole 114b is flush with the carrying surface of the carrying platform 14b, the reaction gas sprayed from the gas inlet to the carrying surface is reversed on the carrying surface and then horizontally enters the exhaust hole 114b, the reaction gas is not reversed from the carrying surface to the exhaust hole 114b, is laminar, and is not turbulent, so that the thickness of the film grown on the surface of the wafer 2 is more uniform.
Further, the sidewall 11b includes a barrel 110b and a pumping ring 113b. Barrel 110b is preferably a cylinder. The cylinder 110b is coaxially disposed with the pumping ring 113b, and the pumping ring 113b is embedded on the inner wall of the cylinder 110 b. The first passage 117b and the annular flow passage 119b are both disposed in the wall of the barrel 110 b. As shown in fig. 6, the pumping ring 113b is provided with a plurality of radially extending exhaust holes 114b. The exhaust holes 114b radially penetrate the exhaust ring 113b. The exhaust port 114b communicates with the annular flow passage 119 b. The suction ring 113b is preferably annular.
Further, the chamber 10b further includes a shower head 15b provided at the top. The shower head 15b communicates with the air inlet 131b. The showerhead 15b is configured to uniformly spray the reaction gas supplied from the gas inlet 131b onto the load table 14 b.
Further, the film preparation apparatus is used for preparing a carbon film. The film preparation equipment adopts a chemical vapor deposition method to deposit a film. The gas pressure in the chamber 10b is 1 to 50torr during deposition. The carrying platform 14b can be heated, for example, heating wires are provided in the carrying platform 14 b.
Further, the distance between the exhaust hole 114b and the air outlet 115b is 50 to 200mm. The exhaust port is circular and preferably has a diameter of 50 to 200mm.
Further, the reaction chamber 1b is provided with a plurality of cavities 10b and a plurality of load carrying platforms 14b. The same number of cavities 10b and load carrying platforms 14b are provided, for example, two. The carrying platforms 14b are arranged in a one-to-one correspondence with the cavities 10b, and the carrying platforms 14b are arranged in the corresponding cavities 10 b.
Example two
As shown in fig. 7, fig. 7 shows a reaction chamber 1 of a semiconductor processing apparatus. The reaction chamber 1 comprises a cavity 10 and a load carrier 14. A load platform 14 is disposed within the cavity 10. The top of the load carrying platform 14 is provided with a horizontal carrying surface. The carrying surface is used for carrying the wafer 2 to be processed.
The cavity 10 comprises a bottom wall 12, side walls 11 and a top wall 13. The side wall 11 is provided in a cylindrical configuration. The side walls 11 are arranged vertically. The top wall 13 and the bottom wall 12 are respectively arranged at the top end and the bottom end of the side wall 11, and the bottom wall 12, the side wall 11 and the top wall 13 enclose a cavity structure.
The side wall 11 has an interior cavity therein, which is preferably a cylindrical cavity. A load carrier 14 is disposed within the interior cavity. Support columns supporting the load platform 14 are arranged below the load platform 14. The side wall 11 is preferably a cylindrical structure, the carrying platform 14 is preferably a circular plate shape, and the carrying platform 14 and the side wall 11 are coaxially arranged. The sidewall 11 is provided with a plurality of exhaust holes 114. The exhaust hole 114 is formed by radially recessing the inner peripheral wall of the side wall 11. The plurality of vent holes 114 are arranged in sequence around the load platform. The spacing between adjacent vents 114 is the same.
The top wall 13 may be provided as a plate-like structure, preferably a circular plate. The top wall 13 overlies the top end of the side wall 11 and covers the top end of the side wall 11. The middle portion of the top wall 13 is provided with an air inlet 131. The outward end of the gas inlet 131 is connected to a source of reactant gas via a conduit. The reaction gas source may be a tank containing the reaction gas or a generator for producing the reaction gas. The gas inlet 131 is used to introduce a reaction gas into the chamber 10. The gas inlet 131 is disposed downward so that the reaction gas is downwardly sprayed. The loading platform 14 is disposed below the air inlet 131. The air inlet 131 is aligned with the middle of the load platform 14.
The bottom wall 12 is provided at the bottom end of the side wall 11 and covers the bottom end of the side wall 11. The bottom wall 12 may be provided in a flat plate structure, preferably a circular plate. An air outlet 115 is provided below the middle of the bottom wall 12. The gas outlet 115 is used to exhaust the gas in the chamber 10. The air outlet 115 is used for connecting an air extracting device, for example, the air outlet 115 is communicated with a vacuum pump through a pipeline. The evacuation device is activated to evacuate the gas to create a negative pressure at the gas outlet 115.
An exhaust runner 116 communicating the exhaust hole 114 and the air outlet 115 is also provided in the wall surface of the chamber 10. The exhaust runner 116 includes a first runner 117 and a second runner 118. A first flow passage 117 is provided in the side wall 11 and a second flow passage 118 is provided in the bottom wall. A first flow passage 117 extends from each vent 114 to a second flow passage 118. The second flow passage 118 extends from one end of the first flow passage 117 to the air outlet 115. The gas sequentially passes through the gas discharge hole 114, the first flow passage 117, and the second flow passage 118 to the gas outlet 115. The path of the gas in the chamber 10 from each vent 114 to the vent is equal along the vent flow path 116. The equal paths herein mean that the trajectories of the gas movement have the same shape and the same length.
The wafer 2 is placed in the middle of the carrier stage. The gas inlet 131 inputs a reaction gas into the chamber 10, the reaction gas is sprayed to the wafer 2 of the loading platform after being input into the chamber 10 from the gas inlet 131, when the reaction gas flows over the surface of the wafer 2, a part of the reaction gas is deposited on the surface of the wafer 2, and the other part of the reaction gas reaches the gas outlet 115 through the gas outlet 114 via the gas outlet flow channels and is output from the gas outlet 115. Since the paths of the gases from each of the exhaust holes 114 to the gas outlet 115 are equal, the speeds of the gases entering each of the exhaust holes 114 are the same, so that the flow speeds of the reactive gas flows which flow through the center of the wafer 2 and spread around are equal, and the film grown on the surface of the wafer 2 is more uniform.
Further, as shown in fig. 8 and 9, the first flow passage 117 and the second flow passage 118 are both direct flow passages. The first flow passage 117 and the second flow passage 118 are each provided with a plurality of. The number of the first flow channels 117 and the number of the second flow channels 118 are equal to the number of the exhaust holes 114, the first flow channels 117 and the exhaust holes 114 are arranged in one-to-one correspondence, and the second flow channels 118 and the first flow channels 117 are arranged in one-to-one correspondence. Each first flow passage 117 extends from its corresponding vent 114 to its corresponding second flow passage 118 along the axial direction of the sidewall 11. Each second flow passage 118 extends from an end opposite the first flow passage 117 to the air outlet 115. So configured, each of the exhaust runners 116 is composed of a first runner 117 and a second runner 118 corresponding to the first runner 117, and each of the exhaust runners 116 is identical in shape and length, which results in the same resistance experienced by the gas passing through each of the exhaust runners 116, and thus the same rate at which the gas is drawn in by each of the exhaust holes 114.
Further, the cross section of the vent 114 is elliptical. The long axis of the cross section is horizontally arranged, and the short axis is vertically arranged. After such setting, the exhaust hole 114 is more long and narrow in the horizontal direction and is more flat in the vertical direction, and the exhaust hole 114 can enable the air flow to be absorbed more uniformly in the circumferential direction when inhaling, so that the distribution of the reactive gas flow diffused to the periphery on the wafer 2 is more uniform, and the thickness of the film grown on the surface of the wafer 2 is more uniform. The cross-sectional area of the vent 114 is preferably 0.5 pi-2 pi cm 2. Thus, the vent 114 is of a moderate size to provide a better result.
Further, the side wall 11 is cylindrical, the carrying platform is a circular plate, and the side wall 11 and the carrying platform are coaxially arranged. After the carrying platform and the side wall 11 are coaxially arranged, the distance between the carrying platform and the side wall 11 is the same, and the air flow is more uniformly distributed in all directions when flowing from the carrying platform to the exhaust hole 114 of the side wall 11, so that the thickness of a film grown on the surface of the wafer 2 is more uniform.
Further, the vent 114 is flush with the load-bearing surface of the load-bearing platform 14. When the exhaust hole 114 is flush with the carrying surface of the carrying platform 14, the reaction gas sprayed from the gas inlet to the carrying surface is reversed on the carrying surface and then horizontally enters the exhaust hole 114, the reaction gas is not reversed from the carrying surface to the exhaust hole 114 and is laminar, and turbulence is not generated, so that the thickness of the film grown on the surface of the wafer 2 is more uniform.
Further, the side wall 11 includes a cylinder 110 and an air pumping ring 113. The cylinder 110 is preferably a cylinder. The cylinder 110 is coaxially arranged with the air suction ring 113, and the air suction ring 113 is embedded on the inner wall of the cylinder 110. The first flow passage 117 is provided in the wall surface of the cylinder 110. As shown in fig. 10, the pumping ring 113 is provided with a plurality of radially extending exhaust holes 114. The exhaust hole 114 radially penetrates the pumping ring 113. The vent 114 communicates with the first flow passage 117. The suction ring 113 is preferably annular.
Further, the chamber 10 further comprises a spray head 15 arranged at the top. The spray head 15 communicates with the air inlet 131. The showerhead 15 is used to uniformly spray the reaction gas inputted from the gas inlet 131 onto the loading platform 14.
Further, the film preparation apparatus is used for preparing a carbon film. The film preparation equipment adopts a chemical vapor deposition method to deposit a film. The gas pressure in the chamber 10 is 1 to 50torr during deposition. The carrying platform 14 can be heated, for example, heating wires are provided in the carrying platform 14.
Further, the distance between the exhaust hole 114 and the air outlet 115 is 50 to 200mm. The exhaust port is circular and preferably has a diameter of 50 to 200mm.
Further, the reaction chamber 1 is provided with a plurality of cavities 10 and a plurality of load carrying platforms 14. The same number of cavities 10 and load carrying platforms 14 is provided, for example, two. The carrying platforms 14 are arranged in a one-to-one correspondence with the cavities 10, and the carrying platforms 14 are arranged in the corresponding cavities 10.
Example III
The reaction chamber in the third embodiment is different from the reaction chamber in the second embodiment only in the design of the exhaust flow path.
As shown in fig. 11 and 12, the first flow passage 117c is configured as an annular chamber disposed within the sidewall 11 and coaxially disposed with the sidewall 11. One end of the annular cavity communicates with each of the exhaust holes 114 and the other end communicates with the second flow passage 118c. The second flow passage 118c is configured as a disc-shaped chamber, and the second flow passage 118c is provided in the bottom wall 12 and is provided coaxially with the bottom wall 12. The end of the first flow channel 117c is connected to the edge of the second flow channel 118c, and the air outlet 115 communicates with the middle of the second flow channel 118c. So configured, the path of the gas in the chamber 10 from each of the exhaust vents 114 through the exhaust runner 116 to the gas outlet 115 is equal, and thus the rate at which the gas is inhaled by each of the exhaust vents 114 is the same.
It should be appreciated that the various examples described above may be utilized in a variety of directions (e.g., tilted, inverted, horizontal, vertical, etc.) and in a variety of configurations without departing from the principles of the present invention. The embodiments shown in the drawings are shown and described merely as examples of useful applications of the principles of the invention, which are not limited to any specific details of these embodiments.
Of course, once the above description of the representative embodiments has been carefully considered, those skilled in the art will readily appreciate that numerous modifications, additions, substitutions, deletions, and other changes may be made to these specific embodiments, and such changes are within the scope of the principles of the present invention. Accordingly, the foregoing detailed description is to be clearly understood as being given by way of illustration and example only, the spirit and scope of the present invention being limited solely by the appended claims and equivalents thereto.
Claims (15)
1. The reaction chamber of the film preparation equipment is characterized by comprising a cavity and an object carrying platform arranged in the cavity;
The cavity comprises:
The air inlet is arranged above the carrying platform and is used for inputting reaction gas;
The cylindrical side wall is provided with a plurality of exhaust holes which are positioned at the same horizontal height, are formed by the concave inner peripheral wall of the side wall and are distributed around the carrying platform, and the exhaust holes are flush with the carrying surface of the carrying platform; and
The exhaust runner is arranged in the wall surface of the cavity and is communicated with each exhaust hole;
when the exhaust runner is used for exhausting, the gas above the carrying platform uniformly flows from the middle to the periphery.
2. The reaction chamber of claim 1 wherein the exhaust runner comprises an annular runner disposed within the sidewall and two first channels communicating respectively with symmetrical sides of the annular runner;
A plurality of the exhaust ports each extend from the inner peripheral wall to the annular flow passage.
3. The reaction chamber of claim 2 wherein the cavity further comprises a bottom wall overlying the bottom of the side wall, two of the first passages extending downwardly from the annular flow passage to the bottom wall;
The exhaust runner further comprises an air outlet arranged in the middle of the bottom wall and two second channels which are arranged in the side wall and extend from the two first channels to the air outlet respectively.
4. A reaction chamber according to claim 3 wherein a plurality of said vents are equally divided into two groups of vents adjacent to two said second channels respectively, each group of vents corresponding to its nearest second channel;
in each group of exhaust holes, the closer to the corresponding second channel, the larger the distance between two adjacent exhaust holes.
5. The reaction chamber of claim 4, wherein in each set of vent holes, the closer to its corresponding second channel, the smaller the vent hole diameter.
6. The reaction chamber of claim 1 wherein the cavity further comprises a top wall overlying the top end of the side wall, the gas inlet being disposed in a middle portion of the top wall.
7. The reaction chamber of claim 1 wherein the plurality of vent holes evenly encircle the load bed;
the cavity further comprises:
The top wall covers the top end of the side wall, and the air inlet is arranged in the middle of the top wall and faces the carrying platform;
A bottom wall covering the bottom end of the side wall, wherein an air outlet for exhausting air in the cavity is arranged below the middle part of the bottom wall;
The wall surface of the cavity is also provided with an exhaust runner which is communicated with the exhaust holes and the air outlets, and the paths of the air in the cavity from each exhaust hole to the air outlets through the exhaust runner are equal.
8. A reaction chamber according to claim 3 wherein the exhaust flow channel comprises a first flow channel disposed in the side wall and a second flow channel disposed in the bottom wall;
the first flow passage extends from each vent hole to the second flow passage, and the second flow passage extends from the first flow passage to the air outlet.
9. The reaction chamber of claim 8 wherein the first flow channels are straight flow channels extending axially along the sidewall and the second flow channels are straight flow channels extending radially from each first flow channel to the gas outlet.
10. The reaction chamber of claim 8 wherein the first flow passage is an annular chamber having one end in communication with each vent and the other end in communication with the second flow passage.
11. The reaction chamber of claim 10 wherein the second flow channel is a disc-shaped chamber, the end of the first flow channel is connected to the edge of the second flow channel, and the air outlet is in communication with the middle of the second flow channel.
12. A reaction chamber according to any one of claims 7 to 11 wherein the vent is elliptical in cross section with the major axis disposed horizontally.
13. The reaction chamber of claim 12 wherein the cross-section has an area of 0.5 pi to 2 pi cm2.
14. The reaction chamber of any one of claims 1 to 11 wherein the side wall is cylindrical and the loading platform is a circular plate, the side wall being arranged coaxially with the loading platform.
15. A thin film production apparatus comprising the reaction chamber according to any one of claims 1 to 14.
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| CN201811076455.6A CN110904437B (en) | 2018-09-14 | 2018-09-14 | Film preparation equipment and reaction chamber thereof |
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| CN201811076455.6A CN110904437B (en) | 2018-09-14 | 2018-09-14 | Film preparation equipment and reaction chamber thereof |
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| CN113174587A (en) * | 2021-04-09 | 2021-07-27 | 深圳市华星光电半导体显示技术有限公司 | Membrane treatment apparatus |
| CN113249707A (en) * | 2021-04-21 | 2021-08-13 | 拓荆科技股份有限公司 | Thin film deposition device and thin film deposition method |
| CN114300336B (en) * | 2021-12-28 | 2024-02-23 | 拓荆科技股份有限公司 | Plasma reactor |
| CN115074704A (en) * | 2022-07-27 | 2022-09-20 | 拓荆科技(上海)有限公司 | Spraying device |
| CN115064471B (en) * | 2022-08-01 | 2023-11-28 | 北京屹唐半导体科技股份有限公司 | Wafer heat treatment device |
| CN116180053A (en) * | 2023-03-03 | 2023-05-30 | 拓荆科技股份有限公司 | Air suction ring, processing method thereof and thin film deposition equipment |
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