CN110783382A - Display panel, display device and manufacturing method of display panel - Google Patents
Display panel, display device and manufacturing method of display panel Download PDFInfo
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- CN110783382A CN110783382A CN201910817852.2A CN201910817852A CN110783382A CN 110783382 A CN110783382 A CN 110783382A CN 201910817852 A CN201910817852 A CN 201910817852A CN 110783382 A CN110783382 A CN 110783382A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
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- H—ELECTRICITY
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Abstract
The invention discloses a display panel, a display device and a manufacturing method of the display panel. The display panel at least comprises a first display area, the first display area is provided with a first sub-pixel, and the first display area comprises: the first substrate is a light-transmitting substrate; a first electrode and a first pixel defining layer on one side of the first substrate, the first pixel defining layer being on the first electrode; wherein the first pixel defining layer includes a plurality of pixel regions and an isolation region; each pixel region comprises at least one first pixel opening, a first light-emitting layer and a second electrode are stacked in each first pixel opening, and each first sub-pixel comprises a first electrode, a first light-emitting layer and a second electrode; each isolation region comprises an isolation groove, an isolation structure is arranged in each isolation groove, and each isolation structure is used for isolating the second electrodes of two adjacent pixel regions. According to the invention, the isolation structure is arranged in the isolation groove of the first pixel limiting layer, so that the second electrodes of two adjacent pixel areas are automatically isolated.
Description
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to a display panel, a display device and a manufacturing method of the display panel.
Background
With the rapid development of display terminals, the requirements of users on screen occupation ratio are higher and higher, so that the comprehensive screen display of the display terminal is concerned more and more in the industry. The comprehensive screen among the prior art is mostly the mode of fluting or trompil, like the bang screen of apple etc. all is the regional fluting or trompil of display screen that corresponds at components such as camera, sensor. When the function of shooing is realized, the external light penetrates into the camera below the display screen through the groove or the hole on the display screen, so that the shooting is realized. However, neither the bang screen nor the perforated screen is a real full screen, and therefore, the development of a real full screen is urgently needed in the industry.
Disclosure of Invention
In view of the above, it is desirable to provide a display panel based on a full-screen, a display device, and a method for manufacturing the display panel.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, an embodiment of the present invention provides a display panel, which at least includes a first display area, where the first display area has a first sub-pixel, and the first display area includes:
the first substrate is a light-transmitting substrate;
a first electrode and a first pixel defining layer on one side of the first substrate, the first pixel defining layer being on the first electrode;
wherein the first pixel defining layer includes a plurality of pixel regions and an isolation region; each pixel region comprises at least one first pixel opening, each first pixel opening comprises a first light-emitting layer and a second electrode which are stacked, and each first sub-pixel comprises the first electrode, the first light-emitting layer and the second electrode; each isolation region comprises an isolation groove, an isolation structure is arranged in each isolation groove, and each isolation structure is used for isolating the second electrodes of the two adjacent pixel regions.
Optionally, the first sub-pixel emits light in a passive driving manner; the pixel regions and the isolation regions are alternately arranged in a first direction, each pixel region comprises at least one first pixel opening arranged in a second direction, the isolation groove and the isolation structure extend in the second direction, and the first direction is intersected with the second direction.
Optionally, a height of the isolation structure is less than or equal to a height of the first pixel defining layer; or a support column is arranged on the first pixel limiting layer and used for supporting a mask plate for vapor deposition, and the height of the isolation structure is smaller than or equal to that of the support column;
preferably, the depth of the isolation trench is smaller than the depth of the first pixel opening;
preferably, the thickness of the isolation structure ranges from 1 μm to 2 μm;
preferably, the isolation trench includes two opposite sidewalls parallel to an extending direction of the isolation trench, and the isolation structure is not in contact with at least one of the sidewalls.
Optionally, the isolation structure includes a stacked supporting portion and a partition portion, the supporting portion is in contact with the bottom of the isolation trench, and at least one side of the partition portion close to the adjacent pixel region protrudes from the supporting portion;
preferably, the supporting part and the partition part are integrally formed;
preferably, the isolation structure is T-shaped or inverted trapezoid;
preferably, the material of the isolation structure comprises a transparent organic glue;
preferably, the transparent organic glue comprises a photosensitive glue.
Optionally, in an extending direction of the isolation structure, a width of the isolation structure changes continuously or discontinuously, the extending direction of the isolation structure is parallel to the first substrate, and the width of the isolation structure is a dimension of an orthographic projection of the isolation structure on the first substrate, in a direction perpendicular to the extending direction of the isolation structure;
preferably, at least one side of the orthographic projection close to the pixel region is nonlinear;
preferably, the non-linear shape includes at least one of a broken line segment, an arc shape, and a wave shape.
Optionally, the display panel further includes a second display region having a second sub-pixel, the second display region including:
a second substrate; a third electrode and a second pixel defining layer on one side of the second substrate, the second pixel defining layer being on the third electrode; the second pixel defining layer includes a plurality of second pixel openings each including a second light emitting layer and a fourth electrode stacked therein, the second sub-pixel including the third electrode, the second light emitting layer, and the fourth electrode;
preferably, the second sub-pixel emits light in an active driving manner;
preferably, the third electrode is a block electrode, and the fourth electrode is a surface electrode;
preferably, the second display area completely or partially surrounds the first display area;
preferably, the second substrate and the first substrate are spliced, or the second substrate and the first substrate are of an integral structure;
preferably, part of the film layers of the first display area and the second display area are located in the same layer, wherein the part of the film layers of the first display area and the second display area are located in the same layer, and at least one of the following conditions is satisfied: the first electrode and the third electrode are located in the same layer, the first pixel defining layer and the second pixel defining layer are located in the same layer, the first light emitting layer and the second light emitting layer are located in the same layer, and the second electrode and the fourth electrode are located in the same layer;
preferably, the first display area is a transparent display area;
preferably, the light transmittance of the transparent display region is greater than 70%;
preferably, the first electrode is a transparent electrode, and the material of the transparent electrode includes at least one of indium tin oxide, indium zinc oxide, silver-doped indium tin oxide, and silver-doped indium zinc oxide;
preferably, the display panel further includes a polarizer at least in the second display region, and the polarizer is located on a side of the second pixel defining layer away from the second substrate.
In a second aspect, an embodiment of the present invention provides a display device, including:
an apparatus body having a device region;
the display panel provided by the embodiment of the invention covers the equipment body;
the device area is located below a first display area of the display panel, and a photosensitive device which transmits light to the first display area or collects light is arranged in the device area.
In a third aspect, an embodiment of the present invention provides a method for manufacturing a display panel, including:
providing a first substrate, wherein the first substrate is a light-transmitting substrate;
sequentially forming a first electrode and a first pixel defining layer on one side of the first substrate, wherein the first pixel defining layer includes a plurality of pixel regions and an isolation region;
forming at least one first pixel opening in each pixel region to expose the first electrode, and forming an isolation groove in each isolation region;
forming an isolation structure in the isolation groove;
forming a first light emitting layer on the exposed first electrode;
and evaporating a second electrode material on the whole surface, wherein the second electrode material is separated by the isolation structure to form a plurality of second electrodes.
Optionally, forming an isolation structure in the isolation trench includes:
depositing a sacrificial layer on the whole surface;
forming an opening on the sacrificial layer positioned at the bottom of the isolation groove;
forming an isolation structure layer on the whole surface, wherein the isolation structure layer completely fills the opening and is higher than the opening;
patterning the isolation structure layer to form the isolation structure;
removing the rest of the sacrificial layer;
preferably, the thickness of the sacrificial layer is greater than the thickness of the second electrode;
preferably, the thickness of the isolation structure ranges from 1 μm to 2 μm;
preferably, before removing the remaining sacrificial layer, the method further comprises:
and baking the isolation structure.
Optionally, forming an opening on the sacrificial layer located at the bottom of the isolation trench includes:
forming an opening on the sacrificial layer positioned at the bottom of the isolation groove by adopting photoetching and wet etching;
preferably, removing the remaining sacrificial layer comprises:
removing the sacrificial layer by wet etching;
preferably, the sacrificial layer is made of indium zinc oxide or indium gallium zinc oxide, and the etching solution for wet etching comprises oxalic acid;
preferably, the sacrificial layer is made of molybdenum or titanium, and the etching solution for wet etching includes a mixed solution of nitric acid, acetic acid and phosphoric acid.
The invention has the beneficial effects that: the embodiment of the invention provides a display panel, a display device and a manufacturing method of the display panel. Therefore, when the second electrode is formed on the whole surface of the first display area, the isolation structure can automatically isolate the second electrode at the isolation structure, so that the second electrodes of two adjacent pixel areas are isolated, and the influence on the first sub-pixel of the first display area caused by etching the second electrode is avoided; meanwhile, the thickness of the first pixel limiting layer is large, and the isolation structure is arranged in the isolation groove of the first pixel limiting layer, so that the thickness of the isolation structure is not limited by the thickness of the display panel, and the second electrode can be completely isolated by arranging the thick isolation structure.
Drawings
The above and other features and advantages of the present invention will become more apparent to those of ordinary skill in the art by describing in detail exemplary embodiments thereof with reference to the attached drawings, in which:
fig. 1 is a schematic distribution diagram of a first pixel opening and an isolation trench according to an embodiment of the present invention;
fig. 2 is a schematic plan view of a display panel according to an embodiment of the present invention;
FIG. 3 is a cross-sectional view taken along section line A-A' in FIG. 2;
fig. 4 is a schematic distribution diagram of a first pixel opening and an isolation trench according to another embodiment of the present invention;
FIG. 5 is a top view of a display panel according to an embodiment of the present invention;
FIG. 6 is a partial cross-sectional view of a second display area of a display panel according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of a display device according to an embodiment of the present invention;
FIG. 8 is a flowchart illustrating a method for fabricating a display panel according to an embodiment of the present invention;
fig. 9 to 14 are intermediate structural diagrams when a display panel is manufactured according to an embodiment of the present invention.
Detailed Description
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
As described in the background art, in the prior art, neither the bang screen nor the perforated screen can achieve a true full screen. The inventor researches and discovers that if a full-screen is realized, a display panel needs to be directly covered on a photosensitive device such as a camera, and the display panel positioned above the photosensitive device such as the camera needs to have high light transmittance.
To solve the above problems, technical personnel have developed a display screen, which realizes the full-screen display of electronic equipment by setting a transparent display panel in a slotted area. According to different driving methods, the OLED display panel can be divided into a PMOLED (Passive Matrix OLED) display panel and an AMOLED (active Matrix OLED) display panel. Taking PMOLED as an example, the same property electrode of the same row of display units of the PMOLED display array is shared, and the same property electrode of the same column of display units is also shared. Specifically, the PMOLED display panel is a matrix of cathodes and anodes, pixels in the array are illuminated in a scanning manner, each pixel is operated in a short pulse mode to emit light at an instantaneous high brightness. Research shows that the PMOLED display panel has high light transmittance due to no TFT backplane and no metal wiring, and thus can be applied to the transparent display panel. However, in order to insulate the cathodes of two adjacent rows or two adjacent columns of display units from each other, the cathode material layer needs to be patterned after the cathode material layer is deposited on the whole surface, and the conventional patterning of the cathode material layer needs to etch the cathode material layer, which inevitably causes damage to the light emitting layer in the display unit, resulting in abnormal display.
In view of the above problems, an embodiment of the present invention provides a display panel, and fig. 1 is a schematic distribution diagram of a first pixel opening and an isolation trench provided in an embodiment of the present invention; fig. 2 is a schematic plan view of a display panel according to an embodiment of the present invention; fig. 3 is a sectional view taken along a section line a-a' in fig. 2. As shown in fig. 1, fig. 2 and fig. 3, the display panel provided in this embodiment at least includes a first display area 100, the first display area 100 has a first sub-pixel 2, and the first display area 100 includes:
a first substrate 1, wherein the first substrate 1 is a light-transmitting substrate;
a first electrode 21 and a first pixel defining layer 3 on one side of the first substrate 1, the first pixel defining layer 3 being on the first electrode 21;
wherein the first pixel defining layer 3 includes a plurality of pixel regions 10 and an isolation region 20; each pixel region 10 includes at least one first pixel opening 101, each first pixel opening 101 includes a first light emitting layer 22 and a second electrode 23 stacked therein, and the first sub-pixel 2 includes a first electrode 21, a first light emitting layer 22 and a second electrode 23; each isolation region 20 includes an isolation trench 201, and an isolation structure 4 is disposed in the isolation trench 201, and the isolation structure 4 is used for isolating the second electrodes 23 of two adjacent pixel regions 10.
The first substrate 1 may provide buffering, protection, or support for the display device. The first substrate 1 may be a flexible substrate or a rigid substrate. The material of the flexible substrate may be Polyimide (PI), and the material of the rigid substrate may be glass.
The first electrode 21 may be an anode and the second electrode 23 a cathode. For example, the first electrode 21 is an anode, which is a transparent electrode, the material of the transparent electrode includes a transparent metal oxide, for example, at least one of Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), Aluminum Zinc Oxide (AZO), silver-doped Indium Tin Oxide (ITO), and silver-doped Indium Zinc Oxide (IZO), or a three-layer structure may also be adopted, wherein the material of the first layer and the third layer may be a transparent metal oxide, for example, Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), or Aluminum Zinc Oxide (AZO), and the material of the middle second layer may be a metal, such as silver or copper; the second electrode 23 is a cathode, and the material may be ITO or magnesium silver alloy. It should be noted that, the arrangement of the material and the thickness of the film layers of the first electrode and the second electrode needs to meet the requirement of the transparency of the transparent display panel, so as to meet the photosensitive effect of the photosensitive device disposed below the transparent display panel. The first light emitting layer 22 may be an organic light emitting layer, wherein the organic light emitting layer may include only a single layer structure, for example, only an organic light emitting material layer; the organic light emitting layer may further include a multilayer structure, for example, the organic light emitting layer may include functional film layers such as a hole injection layer, a hole transport layer, an organic light emitting material layer, an electron transport layer, and an electron injection layer, which are sequentially disposed from the first electrode 21 to the second electrode 23, and a specific structure of the organic light emitting layer is set according to practical applications and is not particularly limited herein.
The material of the first pixel defining layer 3 may be a transparent organic material, and the pixel region 10 and the isolation region 20 may be formed using a photolithography process. The first sub-pixel 2 can emit light in an active driving manner or in a passive driving manner. When the active driving mode is used for emitting light, the first electrode 21 and the second electrode 23 of the first sub-pixel 2 may be both electrode blocks, or one of them is an electrode block, and the other is a whole surface electrode. When the passive driving mode is used for emitting light, the first electrode 21 and the second electrode 23 may both be electrode strips, and the first sub-pixels 2 are arranged in an array, for example, as shown in fig. 2, the first electrode 21 extends along the first direction x, the second electrode 23 extends along the second direction y, and the first sub-pixels 2 are located at the intersection of the first electrode 21 and the second electrode 23.
The isolation structures 4 are disposed along the extending direction of the isolation trenches 201, and the isolation structures 4 may be made of a transparent inorganic material or a transparent organic material. Illustratively, the isolation structure 4 is made of a transparent organic material, preferably, the isolation structure is made of a transparent organic glue, and further, the transparent organic glue is a photosensitive glue, so that the isolation structure can be formed by directly performing photolithography on the photosensitive glue, and the photolithography, dry etching or wet etching and the like do not need to be performed by spin-coating a photoresist, and the preparation process is simple. In addition, the isolation structure 4 is T-shaped or inverted trapezoid, preferably T-shaped, so that the isolation effect of the isolation structure 4 on the second electrode 23 can be ensured.
In this embodiment, the isolation structure 4 may be formed in the isolation trench 201 after the first pixel opening 101 and the isolation trench 201 are formed, and the specific shape of the isolation structure 4 is not limited in this embodiment as long as it is ensured that the second electrode 23 is disconnected at the isolation structure 4 when the second electrode 23 is formed on the whole surface, at this time, the connected second electrode 23 is formed on the first light emitting layer 22 and a part of the first pixel defining layer 3, and the conductive layer 24 insulated from the second electrode is formed on the isolation structure 4, so that the second electrodes 23 of two adjacent pixel regions 10 are insulated. In addition, since the thickness of the first pixel defining layer 3 is larger than that of the second electrode 23, the thickness of the isolation structure 4 can be ensured to be larger than that of the second electrode 23 by forming the isolation structure 4 in the isolation groove 201 of the first pixel defining layer 3, and thus the second electrode 23 is isolated under the condition that the thickness of the display panel is not changed.
It should be noted that fig. 3 is only a schematic diagram, when the second electrode 23 is formed on the whole surface, and along with the difference in the size of the isolation structure 4, a part of the second electrode may cover the sidewall of the isolation trench 201 or even the bottom of the isolation trench 201, and the orthographic projection of the formed second electrode 23 and the conductive layer 24 on the first substrate 1 is still connected to the whole surface, except that the second electrode 23 and the conductive layer 24 are disconnected at the edge of the isolation structure 4 close to the pixel region 10.
In the display panel provided by this embodiment, the first display region includes the light-transmitting first substrate, the first electrode and the first pixel defining layer are sequentially stacked on the first substrate, the isolation region of the first pixel defining layer forms the isolation groove, and the isolation structure is disposed in the isolation groove. Therefore, when the second electrode is formed on the whole surface of the first display area, the isolation structure can automatically isolate the second electrode at the isolation structure, so that the second electrodes of two adjacent pixel areas are isolated, and the influence on the first sub-pixel of the first display area caused by etching the second electrode is avoided; meanwhile, the thickness of the first pixel limiting layer is large, and the isolation structure is arranged in the isolation groove of the first pixel limiting layer, so that the thickness of the isolation structure is not limited by the thickness of the display panel, and the second electrode can be completely isolated by arranging the thick isolation structure.
Optionally, based on the above embodiments, in an embodiment of the present invention, as shown in fig. 4, the first sub-pixel emits light in an active driving manner, and each pixel region includes one first pixel opening 101. At this time, in order to insulate the second electrodes of two adjacent pixel regions (adjacent in the first direction and the second direction), the isolation groove 201 is disposed around each first pixel opening 101 (except for the first pixel opening 101 located at the edge of the first display region 100), and accordingly, the isolation structure is disposed around each first pixel opening 101, referring to fig. 4, the isolation groove 201 is in a grid shape, one first pixel opening 101 is formed in each grid, and the second electrode formed at this time is an electrode block.
Optionally, based on the above embodiment, in another embodiment of the present invention, with reference to fig. 1, the first sub-pixel emits light in a passive driving manner; the pixel regions 10 and the isolation regions 20 are alternately arranged in a first direction x, each pixel region 10 includes a plurality of first pixel openings 101 arranged in a second direction y, the isolation trenches 201 and the isolation structures extend in the second direction y, and the first direction x intersects the second direction y. At this time, referring to fig. 1 and 2, in any one of the pixel regions 10, the second electrodes 23 corresponding to the first pixel openings 101 are connected in the second direction y to form electrode stripes, and two adjacent electrode stripes in the first direction x are insulated. The first sub-pixel of this embodiment is luminous for the passive drive mode, and rete simple structure, the setting of the photosensitive device of being convenient for can avoid setting up drive TFT and metal and walk the line to increased the luminousness, improved photosensitive device's working property.
Optionally, the height of the isolation structure is less than or equal to the height of the first pixel defining layer; or a support column is arranged on the first pixel limiting layer and used for supporting a mask plate for vapor deposition, and the height of the isolation structure is smaller than or equal to that of the support column; that is, one surface of the first pixel limiting layer far away from the first substrate is flush with one surface of the isolation structure far away from the first substrate, or in the direction far away from the first substrate, one surface of the first pixel limiting layer far away from the first substrate protrudes out of one surface of the isolation structure far away from the first substrate; or one surface of the support column, which is far away from the first substrate, is flush with one surface of the isolation structure, which is far away from the first substrate, or one surface of the support column, which is far away from the first substrate, protrudes out of one surface of the isolation structure, which is far away from the first substrate, in the direction far away from the first substrate; thus, the isolation structure can be prevented from affecting the supporting effect of the first pixel defining layer or the supporting column on the vapor deposition mask plate.
Preferably, the depth of the isolation groove is smaller than the depth of the first pixel opening, that is, the isolation groove does not penetrate through the first pixel defining layer, and the surface of the first electrode at the isolation groove is covered with a layer of the first pixel defining layer. Preferably, the thickness range of the isolation structure is 1 μm to 2 μm, and the height of the isolation structure is ensured to be less than or equal to the height of the first pixel limiting layer while the thickness of the isolation structure is ensured to be greater than the thickness of the second electrode and the function of isolating the second electrode is realized. The depth of the isolation groove is not limited in this embodiment, as long as the isolation structure can be located in the isolation groove and can realize the isolation function of the second electrode.
Preferably, the isolation trench comprises two opposite sidewalls parallel to the extension direction of the isolation trench, the isolation structure being free from contact with at least one of the sidewalls. Therefore, at least one side edge of the isolation structure adjacent to the side wall is not contacted with the first pixel limiting layer, and the second electrodes of two adjacent pixel areas can be separated at least one side edge of the isolation structure.
Alternatively, with continued reference to fig. 3, the isolation structure 4 may specifically include a stacked supporting portion 41 and a partition portion 42, the supporting portion 41 is in contact with the bottom of the isolation trench 201, and at least one side of the partition portion 42 close to the adjacent pixel region is disposed to protrude from the supporting portion 41. The supporting portion 41 has the functions of supporting and heightening the partition portion 42, so as to prevent the second electrode 23 from being electrically connected with the conductive layer 24 due to the fact that the thickness of the second electrode 23 is greater than that of the isolation structure 4, and further prevent the second electrodes 23 of two adjacent pixel regions from being electrically connected, so that abnormal display is caused; meanwhile, at least one side of the partition part 42 close to the adjacent pixel region protrudes from the supporting part 41, so that the part of the second electrode 23 close to at least one side of the partition part 42 falls into the bottom of the isolation groove 201, and the second electrode 23 is disconnected from the conductive layer 24, thereby realizing the partition of the second electrodes 23 of two adjacent pixel regions.
Optionally, the support portion and the partition portion are integrally formed; the isolation structure is T-shaped or inverted trapezoid; the isolation structure is made of transparent organic glue; the transparent organic glue is photosensitive glue.
Optionally, in an extending direction of the isolation structure, a width of the isolation structure changes continuously or discontinuously, the extending direction of the isolation structure is parallel to the first substrate, and the width of the isolation structure is a size of an orthographic projection of the isolation structure on the first substrate in a direction perpendicular to the extending direction of the isolation structure; optionally, at least one side of the orthographic projection close to the pixel region is nonlinear; preferably, the non-linear shape includes at least one of a broken line segment, an arc shape, and a wave shape. Since the external light can generate diffraction phenomenon when passing through the isolation structure, the diffraction is a physical phenomenon that the light wave deviates from the original straight line propagation when meeting the obstacle. In particular, light waves propagate with varying degrees of bending and spreading after passing through obstacles such as slits, holes or discs. When external light passes through the isolation structure, the isolation structure acts as an obstacle to cause diffraction when the light passes through, and the position of the diffraction stripe is determined by the maximum width of each position. Therefore, the isolation structure is arranged to have the maximum width which is changed in the extending direction, and the positions of diffraction fringes generated by external light at the positions with different maximum widths are different, so that diffraction is not obvious, and the effect of improving diffraction is achieved.
FIG. 5 is a top view of a display panel according to an embodiment of the present invention; fig. 6 is a partial cross-sectional view of a second display region of a display panel according to an embodiment of the present invention. As shown in fig. 5 and 6, in another embodiment of the present invention, the display panel further includes a second display area 200, the second display area 200 has a second sub-pixel 6, and the second display area 200 includes:
a second substrate 5; a third electrode 61 and a second pixel defining layer 7 on the second substrate 5 side, the second pixel defining layer 7 being on the third electrode 61; the second pixel defining layer 7 includes a plurality of second pixel openings 301, each of the second pixel openings 301 includes a second light emitting layer 62 and a fourth electrode 63 stacked therein, and the second sub-pixel 6 includes a third electrode 61, a second light emitting layer 62 and a fourth electrode 63.
Optionally, the second sub-pixel 6 emits light in an active driving manner.
Alternatively, the third electrode 61 is a bulk electrode and the fourth electrode 63 is a surface electrode.
Optionally, the second display area 200 completely or partially surrounds the first display area 100.
Optionally, the second substrate and the first substrate are spliced together, or the second substrate and the first substrate are an integral structure. In this embodiment, the second substrate 5 may be a flexible substrate, a rigid substrate, a transparent substrate, or a non-transparent substrate. In addition, the second substrate 5 and the first substrate 1 may be an integral structure, and the second display region 200 and the first display region 100 are formed on the second substrate 5 and the first substrate 1, respectively, or may be different substrate structures, and when the whole display panel structure is formed, the second substrate 5 and the first substrate 1 are spliced. The third electrode 61 may be an anode and the fourth electrode 63 may be a cathode.
Preferably, part of the film layers of the first display area 100 and the second display area 200 are located at the same layer, wherein the part of the film layers of the first display area 100 and the second display area 200 are located at the same layer, and at least one of the following conditions is satisfied: referring to fig. 3 and 6, the first electrode 21 and the third electrode 61 are located at the same layer, the first pixel defining layer 3 and the second pixel defining layer 7 are located at the same layer, the first light emitting layer 22 and the second light emitting layer 62 are located at the same layer, and the second electrode 23 and the fourth electrode 63 are located at the same layer. Partial film layers of the first display area 100 and the second display area 200 are arranged on the same layer, and when the display panel is manufactured, the film layers on the same layer in the first display area 100 and the second display area 200 can be manufactured simultaneously to form the display panel with an integrated structure, so that the process steps are simplified, and the manufacturing cost is reduced. In addition, the array substrate of the second display region may further include transparent film layers such as the buffer layer 81, the gate insulating layer 82, the interlayer insulating layer 83, and the planarization layer 84, and in this case, when the first display region 100 and the second display region 200 are simultaneously manufactured, the transparent film layers such as the buffer layer 81, the gate insulating layer 82, the interlayer insulating layer 83, and the planarization layer 84 may be simultaneously formed in the first display region 100, so that the overall film thicknesses of the first display region 100 and the second display region 200 are matched. The film layers of the first display area 100 and the second display area 200 may also be separately manufactured, so that the first display area 100 and the second display area 200 may be manufactured in more flexible shapes, and then the first display area 100 and the second display area 200 are spliced together, for example, the first display area 100 may be a rectangle as shown in fig. 5, or may also be a drop shape, a circle, a trapezoid, a bar shape, or a shape and a size corresponding to a status bar when the display panel displays, which is not specifically limited herein. The display panel provided by the embodiment can realize full-screen display.
Preferably, the first display area is a transparent display area; preferably, the light transmittance of the transparent display region is greater than 70%; preferably, the first electrode is a transparent electrode, and the material of the transparent electrode includes at least one of indium tin oxide, indium zinc oxide, silver-doped indium tin oxide, and silver-doped indium zinc oxide.
Optionally, the display panel further includes an encapsulation layer, a polarizer, and a cover plate, which are sequentially disposed on a side of the fourth electrode away from the substrate, where the polarizer is at least located in the second display region.
The embodiment of the invention also provides a display device which can be a mobile phone, a computer, an intelligent watch, an intelligent bracelet and other equipment. Fig. 7 is a schematic structural diagram of a display device according to an embodiment of the present invention, and as shown in fig. 7, the display device includes:
an apparatus body 300 having a device region 400;
the display panel provided by the embodiment of the invention covers the device body 300;
the device region 400 is located below the first display region 100 of the display panel, and a photosensitive device that emits or collects light through the first display region 100 is disposed in the device region 400. Alternatively, the light sensing device 2 may include: a camera and/or a light sensor; the light sensor includes: one or a combination of an iris recognition sensor and a fingerprint recognition sensor.
The embodiment of the invention also provides a manufacturing method of the display panel, and fig. 8 is a flow chart of the manufacturing method of the display panel provided by the embodiment of the invention; fig. 9 to 14 are intermediate structural diagrams when a display panel is manufactured according to an embodiment of the present invention. The manufacturing method of the display panel provided by the embodiment of the invention comprises the following steps:
The first substrate may be a light-transmitting substrate.
Wherein the first pixel defining layer includes a pixel region and an isolation region. Referring to fig. 9, a first electrode 21 and a first pixel defining layer 3 are sequentially formed on one side of a first substrate 1.
At step 130, at least one first pixel opening is formed in each pixel region to expose the first electrode, and an isolation trench is formed in each isolation region.
Referring to fig. 10, at least one first pixel opening 101 is formed in each pixel region to expose the first electrode 21, and an isolation trench 201 is formed in each isolation region.
Optionally, referring to fig. 11, a sacrificial layer 91 is deposited over the entire surface, preferably, the sacrificial layer is made of indium zinc oxide or indium gallium zinc oxide, or the sacrificial layer is made of molybdenum or titanium, so that the sacrificial layer 91 is removed by wet etching.
Referring to fig. 12, an opening 401 is formed on the sacrificial layer 91 at the bottom of the isolation trench 201, and the embodiment may use a photolithography and etching (wet etching or dry etching) process to etch the sacrificial layer 91 to form the opening 401.
Referring to fig. 13, an isolation structure layer is formed on the whole surface, wherein the isolation structure layer completely fills the opening and is higher than the opening; and patterning the isolation structure layer to form the isolation structure 4, wherein a part of the isolation structure 4 filled in the opening is a support part of the isolation structure 4, and a part of the isolation structure 4 covering the sacrificial layer 91 is a partition part of the sacrificial layer 91. In this embodiment, the material of the isolation structure layer may be a transparent inorganic material or a transparent organic material. When the material of the isolation structure layer is a transparent inorganic material, the material may be silicon dioxide, silicon nitride, or the like, and each isolation structure 4 may be formed by photolithography and dry etching or wet etching. When the material of the isolation structure layer is a transparent organic material, a transparent organic glue is preferred, and the transparent organic glue has strong fluidity, good filling effect and is easy to cure, so that the opening 401 can be effectively filled and a firm isolation structure 4 can be formed. Preferably, the isolation structure layer is made of a photosensitive adhesive, which may be a positive adhesive or a negative adhesive, so that the isolation structure 4 can be formed only by a photolithography process (exposure and development), thereby avoiding dry etching or wet etching of the isolation structure layer, and the process is simple.
Finally, referring to fig. 14, the remaining sacrificial layer is removed. In this embodiment, the remaining sacrificial layer may be removed by a wet etching method, for example, when the material of the sacrificial layer is indium zinc oxide or indium gallium zinc oxide, the etching solution of the wet etching may be oxalic acid, and at this time, the etching selectivity of the sacrificial layer is relatively large, which does not cause over-etching, and the first pixel defining layer and the first electrode are not affected by the sacrificial layer immediately after etching. It should be noted that, although the material of the first electrode 21 may be ito, ito of the first electrode 21 needs to be subjected to a high temperature annealing process. The oxalic acid cannot corrode the indium tin oxide subjected to the high-temperature annealing treatment, so that the first electrode 21 is not etched when the sacrificial layer is removed. When the sacrificial layer is made of molybdenum or titanium, the etching liquid for wet etching comprises a mixed liquid of nitric acid, acetic acid and phosphoric acid.
Optionally, the thickness of the sacrificial layer is greater than the thickness of the second electrode. The part of the isolation structure layer filled in the sacrificial layer opening forms a supporting part of the isolation structure, so that the thickness of the supporting part of the isolation structure is limited by the thickness of the sacrificial layer, the thickness of the sacrificial layer is set to be larger than that of the second electrode, the thickness of the supporting part of the manufactured isolation structure can be larger than that of the second electrode, and therefore the second electrode formed subsequently can be prevented from being in electric contact with a conducting layer on the isolation structure, and the second electrodes of all pixel regions can be guaranteed to be disconnected with each other.
Optionally, the thickness of the isolation structure ranges from 1 μm to 2 μm. Therefore, the thickness of the isolation structure is larger than that of the second electrode, the function of isolating the second electrode is achieved, and meanwhile the height of the isolation structure is smaller than or equal to that of the first pixel limiting layer.
At present, the problem of poor adhesion of the isolation structure generally exists in the existing manufacturing process of the isolation structure. This embodiment is through setting up one deck sacrificial layer to fill sacrificial layer open-ended mode and form isolation structure at the opening part of sacrificial layer, can effectively improve the adhesive force of isolation structure and isolation trench bottom, prevent that isolation structure from droing.
In addition, preferably, before removing the remaining sacrificial layer, the method may further include: and baking the isolation structure. Thereby the isolation structure can be fixed and prevented from collapsing.
Step 150 forms a first light emitting layer on the exposed first electrode.
And 160, evaporating a second electrode material on the whole surface, wherein the second electrode material is separated by an isolation structure to form a plurality of second electrodes.
Exemplarily, referring to fig. 3, a first light emitting layer 22 is formed on the exposed first electrode 21, that is, an organic light emitting material is evaporated in the first pixel opening 101 to form the first light emitting layer 22; next, a second electrode material is deposited over the entire surface, and the second electrode material is blocked by the barrier structure 4 to form a plurality of second electrodes 23.
In the manufacturing method of the display panel provided by this embodiment, the first display region includes the transparent first substrate, the first electrode and the first pixel defining layer are sequentially stacked on the first substrate, the isolation region of the first pixel defining layer forms the isolation groove, and the isolation structure is disposed in the isolation groove, so that when the second electrode is formed on the entire surface of the first display region, the isolation structure can automatically separate the second electrode at the isolation structure, thereby separating the second electrodes of two adjacent pixel regions, and avoiding the influence on the first sub-pixel of the first display region caused by etching the second electrode; meanwhile, the thickness of the first pixel limiting layer is large, and the isolation structure is arranged in the isolation groove of the first pixel limiting layer, so that the thickness of the isolation structure is not limited by the thickness of the display panel, and the second electrode can be completely isolated by arranging the thick isolation structure. In addition, by arranging the sacrificial layer and forming the isolation structure at the opening of the sacrificial layer in a mode of filling the opening of the sacrificial layer, the adhesion force between the isolation structure and the bottom of the isolation groove can be effectively improved, and the isolation structure is prevented from falling off.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A display panel, comprising at least a first display region having a first sub-pixel, the first display region comprising:
the first substrate is a light-transmitting substrate;
a first electrode and a first pixel defining layer on one side of the first substrate, the first pixel defining layer being on the first electrode;
wherein the first pixel defining layer includes a plurality of pixel regions and an isolation region; each pixel region comprises at least one first pixel opening, each first pixel opening comprises a first light-emitting layer and a second electrode which are stacked, and each first sub-pixel comprises the first electrode, the first light-emitting layer and the second electrode; each isolation region comprises an isolation groove, an isolation structure is arranged in each isolation groove, and each isolation structure is used for isolating the second electrodes of the two adjacent pixel regions.
2. The display panel according to claim 1, wherein the first sub-pixel emits light in a passive driving manner; the pixel regions and the isolation regions are alternately arranged in a first direction, each pixel region comprises at least one first pixel opening arranged in a second direction, the isolation groove and the isolation structure extend in the second direction, and the first direction is intersected with the second direction.
3. The display panel according to claim 1 or 2, wherein a height of the isolation structure is less than or equal to a height of the first pixel defining layer; or a support column is arranged on the first pixel limiting layer and used for supporting a mask plate for vapor deposition, and the height of the isolation structure is smaller than or equal to that of the support column;
preferably, the depth of the isolation trench is smaller than the depth of the first pixel opening;
preferably, the thickness of the isolation structure ranges from 1 μm to 2 μm;
preferably, the isolation trench includes two opposite sidewalls parallel to an extending direction of the isolation trench, and the isolation structure is not in contact with at least one of the sidewalls.
4. The display panel according to claim 1 or 2, wherein the isolation structure includes a support portion and a blocking portion stacked, the support portion contacting a bottom of the isolation trench, at least one side of the blocking portion adjacent to an adjacent pixel region being disposed to protrude from the support portion;
preferably, the supporting part and the partition part are integrally formed;
preferably, the isolation structure is T-shaped or inverted trapezoid;
preferably, the material of the isolation structure comprises a transparent organic glue;
preferably, the transparent organic glue comprises a photosensitive glue.
5. The display panel according to claim 1 or 2, wherein the width of the isolation structures varies continuously or discontinuously in the extending direction of the isolation structures, the extending direction of the isolation structures is parallel to the first substrate, and the width of the isolation structures is a dimension of an orthographic projection of the isolation structures on the first substrate in a direction perpendicular to the extending direction of the isolation structures;
preferably, at least one side of the orthographic projection close to the pixel region is nonlinear;
preferably, the non-linear shape includes at least one of a broken line segment, an arc shape, and a wave shape.
6. The display panel of claim 1, further comprising a second display region having a second sub-pixel, the second display region comprising:
a second substrate; a third electrode and a second pixel defining layer on one side of the second substrate, the second pixel defining layer being on the third electrode; the second pixel defining layer includes a plurality of second pixel openings each including a second light emitting layer and a fourth electrode stacked therein, the second sub-pixel including the third electrode, the second light emitting layer, and the fourth electrode;
preferably, the second sub-pixel emits light in an active driving manner;
preferably, the third electrode is a block electrode, and the fourth electrode is a surface electrode;
preferably, the second display area completely or partially surrounds the first display area;
preferably, the second substrate and the first substrate are spliced, or the second substrate and the first substrate are of an integral structure;
preferably, part of the film layers of the first display area and the second display area are located in the same layer, wherein the part of the film layers of the first display area and the second display area are located in the same layer, and at least one of the following conditions is satisfied: the first electrode and the third electrode are located in the same layer, the first pixel defining layer and the second pixel defining layer are located in the same layer, the first light emitting layer and the second light emitting layer are located in the same layer, and the second electrode and the fourth electrode are located in the same layer;
preferably, the first display area is a transparent display area;
preferably, the light transmittance of the transparent display region is greater than 70%;
preferably, the first electrode is a transparent electrode, and the material of the transparent electrode includes at least one of indium tin oxide, indium zinc oxide, silver-doped indium tin oxide, and silver-doped indium zinc oxide;
preferably, the display panel further includes a polarizer at least in the second display region, and the polarizer is located on a side of the second pixel defining layer away from the second substrate.
7. A display device, comprising:
an apparatus body having a device region;
and a display panel according to any one of claims 1 to 6, overlaid on the device body;
the device area is located below a first display area of the display panel, and a photosensitive device which transmits light to the first display area or collects light is arranged in the device area.
8. A method for manufacturing a display panel is characterized by comprising the following steps:
providing a first substrate, wherein the first substrate is a light-transmitting substrate;
sequentially forming a first electrode and a first pixel defining layer on one side of the first substrate, wherein the first pixel defining layer includes a plurality of pixel regions and an isolation region;
forming at least one first pixel opening in each pixel region to expose the first electrode, and forming an isolation groove in each isolation region;
forming an isolation structure in the isolation groove;
forming a first light emitting layer on the exposed first electrode;
and evaporating a second electrode material on the whole surface, wherein the second electrode material is separated by the isolation structure to form a plurality of second electrodes.
9. The method of claim 8, wherein forming an isolation structure in the isolation trench comprises:
depositing a sacrificial layer on the whole surface;
forming an opening on the sacrificial layer positioned at the bottom of the isolation groove;
forming an isolation structure layer on the whole surface, wherein the isolation structure layer completely fills the opening and is higher than the opening;
patterning the isolation structure layer to form the isolation structure;
removing the rest of the sacrificial layer;
preferably, the thickness of the sacrificial layer is greater than the thickness of the second electrode;
preferably, the thickness of the isolation structure ranges from 1 μm to 2 μm;
preferably, before removing the remaining sacrificial layer, the method further comprises:
and baking the isolation structure.
10. The method of claim 9, wherein forming an opening in the sacrificial layer at the bottom of the isolation trench comprises:
forming an opening on the sacrificial layer positioned at the bottom of the isolation groove by adopting photoetching and wet etching;
preferably, removing the remaining sacrificial layer comprises:
removing the sacrificial layer by wet etching;
preferably, the sacrificial layer is made of indium zinc oxide or indium gallium zinc oxide, and the etching solution for wet etching comprises oxalic acid;
preferably, the sacrificial layer is made of molybdenum or titanium, and the etching solution for wet etching includes a mixed solution of nitric acid, acetic acid and phosphoric acid.
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