CN110718438B - Device for modifying material surface by direct fluorination and plasma - Google Patents
Device for modifying material surface by direct fluorination and plasma Download PDFInfo
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- CN110718438B CN110718438B CN201910927704.6A CN201910927704A CN110718438B CN 110718438 B CN110718438 B CN 110718438B CN 201910927704 A CN201910927704 A CN 201910927704A CN 110718438 B CN110718438 B CN 110718438B
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- H—ELECTRICITY
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
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- B01J15/00—Chemical processes in general for reacting gaseous media with non-particulate solids, e.g. sheet material; Apparatus specially adapted therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
- B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
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- H—ELECTRICITY
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J2219/0894—Processes carried out in the presence of a plasma
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/338—Changing chemical properties of treated surfaces
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Abstract
The invention discloses a device for modifying the surface of a material by direct fluorination and plasma, which comprises a device main body, wherein a closed gallery is arranged in the device main body, a plasma activation unit is arranged at the upstream of the closed gallery, a direct fluorination unit is arranged at the downstream of the closed gallery, and the direct fluorination unit is in sealing connection with the plasma activation unit through a self-adaptive open type isolation soft curtain. The device of the invention combines direct fluorination and plasma treatment, reasonably matches discharge plasma and surface direct fluorination according to the surface functionalization requirement, greatly reduces the usage amount and the usage condition of fluorine gas, improves the timeliness and the stability of the plasma surface modification effect, and improves the hydrophobic recovery phenomenon.
Description
Technical Field
The invention belongs to the technical field of material modification, and particularly relates to a device for modifying the surface of a material by direct fluorination and cooperative plasma.
Background
Different from other modification technologies (such as nano doping and the like), the surface modification technology does not change the performance of a matrix, but realizes functionalization of the surface of the material by performing directional treatment on the surface of the material, such as improvement on surface hydrophobicity, electric resistance, barrier property, adhesion, printability and the like, and has wide application prospects in the fields of electrical, food, medical treatment, petrochemical industry and the like, such as a direct fluorination technology and a plasma technology.
When the direct fluorination technology is used for surface treatment of polyethylene, H atoms on the surface of the polyethylene are replaced by F atoms, so that a low-crystallinity fluorinated layer similar to polytetrafluoroethylene is formed on the surface of the polyethylene, the space charge and the surface electric resistance of the fluorinated layer are effectively improved, and the direct fluorination technology becomes a mature dry surface treatment technology at present. The plasma is rich in active particles such as charge energy and charge, and can cause the surface chemical bonds of the material to break in a short time when the surface of the material is modified, so that a large number of high-activity dangling bonds are formed, the surface micro-morphology and the electrical resistance are improved, and the plasma is regarded as a dry-type and low-temperature surface treatment technology with great potential.
However, with the continuous and intensive research, the bottleneck problems of the two technologies in the application of material surface modification treatment are also revealed, such as the existing direct fluorination process has harsh fluorination conditions (high fluorine gas content, large amount of fluorine gas, high requirement and cost of a reaction kettle), serious over-fluorination phenomenon, and high recovery cost of a large amount of treated waste gas; the aging performance of the plasma surface treatment effect is poor (such as the phenomenon of 'hydrophobic recovery' is serious), the plasma generated by using fluorine-containing gas as working gas is used for carrying out the polymer surface treatment (namely, the plasma indirect fluorination), although the electrical characteristics of the polymer can be greatly improved in a short time (such as the improvement of the surface flashover voltage and the like), the effect is gradually lost after a few days, and the etching effect of the plasma can age the surface of the material.
At present, the equipment and the device for direct surface fluorination are applied to products such as corrosion-resistant barrels, bags and the like, but the consumption of fluorine gas is large, the cost is high, and the environmental protection pressure is large. Most of the existing plasma material processing devices can not avoid the randomness and the dispersity of discharge in space distribution, can not ensure the uniform processing effect of the material, are difficult to continuously process the material in a large area, and simultaneously, the single plasma surface modification effect has poor timeliness and the hydrophobic property recovery phenomenon is serious.
Disclosure of Invention
In view of this, the invention provides a device for modifying a material surface by direct fluorination cooperating with plasma, which can match with surface direct fluorination and discharge plasma according to the surface functionalization requirement, realize continuous treatment of the material, ensure stable material surface treatment effect, and improve the 'hydrophobic recovery phenomenon'.
In order to solve the technical problem, the invention discloses a device for modifying the surface of a material by direct fluorination and plasma, which comprises a device main body, wherein a closed gallery is arranged in the device main body, a plasma activating unit is arranged at the upstream of the closed gallery, a direct fluorination unit is arranged at the downstream of the closed gallery, and the plasma activating unit is in sealing connection with the direct fluorination unit.
Furthermore, the closed gallery is a cuboid gallery with the periphery closed and two ends open, a moving guide rail is arranged at the top of the gallery, a moving slide block is arranged on the guide rail, a clamping element is arranged on the moving slide block, a cutting soft curtain is arranged in the middle of the gallery, so that the plasma activating unit and the direct fluorination unit are in sealed connection, and the cutting soft curtains are arranged at the openings at the two ends of the closed gallery.
Further, the unit of directly fluoridizing is parallel plate structure, including two parallel arrangement's the gaseous cushion chamber of cuboid, all is equipped with a plurality of evenly distributed's aperture on two the face that the gaseous cushion chamber is relative, and two gaseous cushion chambers all are equipped with an air inlet on keeping away from the face of aperture.
Further, the distance between the two gas buffer cavities is 5mm-10 mm.
Furthermore, the diameter of the small hole is 0.5mm-1.0 mm.
Further, the direct fluorination unit is also provided with a negative pressure waste gas recovery system.
Furthermore, the plasma activation unit is of a parallel flat dielectric barrier structure and comprises a high-voltage electrode and a grounding electrode which cover the barrier dielectric, the distance between the high-voltage electrode and the grounding electrode is 5-10 mm, and the length of the electrode is 5-50 cm.
Further, the plasma activation unit is a flat-plate-type dielectric barrier sandwich structure, the sandwich structure comprises a high-voltage electrode, a barrier medium and a grounding screen electrode which are tightly attached to form a sandwich structure unit, the two sandwich structure units are arranged in parallel, opposite surfaces of the two grounding screen electrodes are arranged to form a parallel processing channel, and a gap between the parallel processing channel is 5-10 mm.
Furthermore, the plasma activation unit is of a corona dielectric barrier structure, the plasma activation unit comprises a needle electrode array connected with high voltage and a barrier dielectric of a nano-pore structure to form a discharge unit, the two discharge units are arranged in parallel, opposite surfaces of the barrier dielectric of the nano-pore structure are arranged to form a flat plate type treatment channel, and the gap of the treatment channel is 5-10 mm.
Further, the plasma activation unit is of a jet type structure.
Compared with the prior art, the invention can obtain the following technical effects:
the device for modifying the surface of the material by direct fluorination and plasma combines plasma treatment and plasma treatment, reasonably matches discharge plasma and surface direct fluorination according to the surface functionalization requirement, greatly reduces the usage amount and the use condition of fluorine gas, improves the stability and the timeliness of the surface modification effect of the plasma, improves the hydrophobic recovery phenomenon, and has important significance and practical value for realizing the high-efficiency and economic industrial application of the surface of the material.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is a general block diagram of an apparatus for modifying a surface of a material by direct fluorination in conjunction with plasma in an embodiment of the present invention;
FIG. 2 is a schematic diagram of the structure of a direct fluorination unit in an embodiment of the present invention;
FIG. 3 is a schematic diagram of a parallel plate dielectric barrier type structure in a plasma activation cell in an embodiment of the present invention;
FIG. 4 is a schematic diagram of a planar dielectric barrier sandwich structure in a plasma activation unit according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a corona dielectric barrier type structure in a plasma activation unit in an embodiment of the invention;
FIG. 6 is a schematic view showing a configuration of a jet type center electrode in a plasma activation unit according to an embodiment of the present invention;
FIG. 7 is a schematic view showing a structure of a double ring electrode of a jet type in a plasma activation unit according to an embodiment of the present invention;
fig. 8 is a flowchart of the operation of the apparatus in the embodiment of the present invention.
In the figure, 1, a guide rail, 2, a moving slide block, 3, a split soft curtain, 4, a material sample to be processed, 5, a clamping element, 6, a gas buffer cavity, 7, a small hole, 8, a gas inlet, 9, a blocking medium, 10, a high-voltage electrode, 11, a grounding electrode and 12, a screen grounding electrode are arranged.
Detailed Description
The following embodiments are described in detail with reference to the accompanying drawings, so that how to implement the technical features of the present invention to solve the technical problems and achieve the technical effects can be fully understood and implemented.
The embodiment of the invention discloses a device for modifying the surface of a material by direct fluorination and plasma, which has a structure shown in figure 1 and comprises a device main body, wherein a closed gallery is arranged in the device main body, a plasma activating unit is arranged at the upstream of the closed gallery, a direct fluorination unit is arranged at the downstream of the closed gallery, and the plasma activating unit and the direct fluorination unit are connected in a sealing manner. The optimal size of the processed material is that the width is less than or equal to 10cm and the thickness is adjustable.
As shown in fig. 1, the closed gallery is a rectangular gallery with closed periphery and two open ends, the top of the gallery is provided with a moving guide rail 1, the speed of the guide rail 1 is adjustable and controllable, the guide rail 1 is provided with a moving slide block 2, the moving slide block 2 can move on the guide rail 1, the moving slide block 2 is provided with a clamping element 5, the clamping element 5 is used for clamping a material sample 4 to be processed, the material sample 4 to be processed can be a material film/sheet/plate/material, so as to fix and control the material sample 4 to move along the center of the gallery, and ensure the center of a plasma activation unit and a direct fluorination unit; the middle of the gallery is provided with a separating soft curtain 3 for isolating and/or communicating the plasma activation unit and the direct fluorination unit, so that the direct fluorination unit and the plasma activation unit are in sealed connection, and openings at two ends of the closed gallery are also provided with the separating soft curtain 3. All the split flexible curtains 3 may be adaptive induction opening type flexible curtains.
As shown in fig. 2, the direct fluorination unit is a parallel plate structure, and comprises two cuboid gas buffer chambers 6 arranged in parallel, the distance between the two gas buffer chambers 6 is 5mm-10mm, a plurality of uniformly distributed small holes 7 are arranged on the opposite surfaces of the two gas buffer chambers 6 and used for uniformly treating gas, the diameter of each small hole 7 is 0.5mm-1.0mm, and a gas inlet 8 is arranged on the surface of each gas buffer chamber 6 far from the corresponding small hole 7.
The effective area of the direct fluorination unit was 20cm (width) × 50cm (length); the flow rate of fluorine gas and the mixed gas thereof is controlled to be 0.5slm-3 slm.
The direct fluorination unit is also provided with a negative pressure waste gas recovery system (not shown in the figure) to ensure the safe recovery of the fluorine gas after treatment.
The plasma activation unit is arranged at the upstream of the closed gallery and is mainly of 4 types, namely:
the first structure is shown in fig. 3, the plasma activation unit is a parallel flat dielectric barrier structure, and comprises a high-voltage electrode 10 (connected with high voltage) and a grounding electrode 11 (grounded) which cover a barrier dielectric 9, the distance between the high-voltage electrode 10 and the grounding electrode 11 is 5mm-10mm, and the electrode length is 5cm-50 cm.
It should be noted that the material of the blocking medium 9 is quartz glass, ceramic, epoxy, polytetrafluoroethylene, toughened glass, etc., the electrode is made of rigid metal material (such as copper, aluminum alloy, stainless steel, gold/copper plating, etc.), soft electrode material (such as nano metal powder) or circulating water electrode, and the effective area of the plasma is 12cm in width.
The second structure is as shown in fig. 4, the plasma activation unit is a sandwich structure of a flat-plate-type dielectric barrier along the surface, and comprises a high voltage electrode 10, a barrier dielectric 9 and a grounding screen electrode 12 which are tightly attached to form a sandwich structure unit, the two sandwich structure units are arranged in parallel, and the two grounding screen electrodes 12 are arranged opposite to each other to form a parallel processing channel, and the gap between the parallel processing channels is 5mm-10 mm.
It should be noted that the material of the blocking medium 9 is quartz glass, ceramic, epoxy, polytetrafluoroethylene, toughened glass, etc., the electrode is made of rigid metal material (such as copper, aluminum alloy, stainless steel, gold/copper plating, etc.), soft electrode material (such as nano metal powder) or circulating water electrode, and the effective area of the plasma is 12cm in width.
The third structure is shown in fig. 5, the plasma activation unit is a corona dielectric barrier structure, and includes a discharge unit formed by a high-voltage pin electrode array and a barrier dielectric with a nano-pore structure, the two discharge units are arranged in parallel, and the opposite surfaces of the barrier dielectric with the nano-pore structure are arranged to form a flat-plate-type treatment channel, and the gap between the treatment channels is 5mm-10 mm.
It should be noted that the material of the blocking medium is quartz glass, ceramic, epoxy, polytetrafluoroethylene, toughened glass, etc., the electrode is made of rigid metal material (such as copper, aluminum alloy, stainless steel, gold/copper plating, etc.), soft electrode material (such as nano metal powder) or circulating water electrode, and the effective area of the plasma is 12cm in width.
The fourth structure is shown in fig. 6 and 7, and the plasma activation unit is a jet type structure. The jet flow array is formed by a plurality of jet flow units in parallel, wherein the structure of each jet flow unit is divided into a double-ring electrode structure and a central electrode structure, the material of the jet flow pipe is the same as that of the jet flow pipe 1), the diameter of the pipe is adjustable from 2mm to 20mm, the double-ring electrode is wound on the outer wall of the medium pipe, and the electrode distance and the width are adjustable; the central electrode is arranged at the axial position of the medium tube, the diameter is 1mm-5mm adjustable, and the curvature radius of the tip is less than or equal to 50 mu m.
The material of the jet pipe is quartz glass, ceramic, epoxy, polytetrafluoroethylene, tempered glass, or the like, a double ring electrode (stainless steel, copper, or the like), or a center electrode (stainless steel, copper, tungsten, molybdenum, or the like).
The plasma activating unit can use auxiliary working gas such as helium and argon, is provided with a gas recovery system, and the driving voltage types are mainly sinusoidal alternating current, pulse, microwave, radio frequency and modulation thereof, direct current and the like.
The device can be controlled by an intelligent control unit, the intelligent control unit can be a digital main control console, can also be used for controlling APP by a remote mobile phone, and changes fluorination conditions (fluorine gas flow velocity, gap distance and the like), plasma processing parameters (discharge intensity, plasma power, plasma working area, gap distance and the like), the moving speed of a processed material and the like according to the requirements of processing effects.
The working flow of the device of the invention is shown in fig. 8, and specifically comprises the following steps:
the device utilizes direct fluorination cooperating with plasma to modify the surface of a material, firstly, the material is treated by a plasma activation unit, the charged ions, high-activity radicals and photoelectric and electric effects in the material are transmitted to the surface of the material by the plasma for treatment, and under the action of the factors, C-H bonds on the surface of the material are broken to form high-activity surface dangling bonds; the material sample after the surface activation of the plasma directly enters a direct fluorination unit, fluorine gas is blown to the surface of the activated material, and C-dangling bonds on the surface of the material are combined with fluorine atoms to form stable C-F bonds, so that a compact fluorinated film is formed on the surface of the material, and the surface performance of the material is improved.
The device, the plasma activation unit and the direct fluorination unit are arranged in a complete closed system, the action mechanism and the flow of the plasma activation unit and the direct fluorination unit are continuous, but the plasma activation unit and the direct fluorination unit belong to two independent working links and have no direct interaction. Namely, the material sample firstly enters the plasma activation unit and is in the moving process all the time, and after the plasma treatment, the material sample directly enters the direct fluorination unit to start the modification process of the second stage.
The device of the invention must be subjected to plasma surface activation and then to direct fluorination. Mainly aims to overcome the defects of poor surface performance 'timeliness' and serious 'hydrophobic recovery' phenomenon after the surface treatment of the existing pure plasma; and the defects of harsh fluorination conditions, long fluorination time, large fluorine gas consumption and the like of the direct fluorination.
While the foregoing description shows and describes several preferred embodiments of the invention, it is to be understood, as noted above, that the invention is not limited to the forms disclosed herein, but is not to be construed as excluding other embodiments and is capable of use in various other combinations, modifications, and environments and is capable of changes within the scope of the inventive concept as expressed herein, commensurate with the above teachings, or the skill or knowledge of the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (9)
1. The device for modifying the surface of a material by direct fluorination and plasma is characterized by comprising a device main body, wherein a closed gallery is arranged in the device main body, a plasma activating unit is arranged at the upstream of the closed gallery, a direct fluorination unit is arranged at the downstream of the closed gallery, and the plasma activating unit and the direct fluorination unit are in sealed connection;
the direct fluorination unit is of a parallel flat plate type structure and comprises two cuboid gas buffer cavities which are arranged in parallel, wherein a plurality of uniformly distributed small holes are formed in the surfaces, opposite to the gas buffer cavities, of the gas buffer cavities, and the gas buffer cavities are far away from the small holes and are provided with air inlets.
2. The device for modifying the surface of a material by direct fluorination cooperated with plasma according to claim 1, wherein the closed gallery is a rectangular gallery closed at the periphery and opened at two ends, a moving guide rail is arranged at the top of the gallery, a moving slider is arranged on the guide rail, a clamping element is arranged on the moving slider, a separating soft curtain is arranged in the middle of the gallery, so that a sealing connection is formed between the plasma activating unit and the direct fluorination unit, and the separating soft curtains are arranged at the openings at two ends of the closed gallery.
3. The apparatus for modifying the surface of a material by direct fluorination and plasma according to claim 1, wherein the distance between the two gas buffer chambers is 5mm to 10 mm.
4. The apparatus for modifying the surface of a material by direct fluorination and cooperative plasma according to claim 1, wherein the diameter of the small hole is 0.5mm to 1.0 mm.
5. The apparatus for modifying the surface of a material by direct fluorination in conjunction with plasma according to claim 1, wherein the direct fluorination unit is further provided with a negative pressure exhaust gas recovery system.
6. The device for modifying the surface of a material by direct fluorination and cooperative plasma according to any one of claims 1 to 5, wherein the plasma activation unit is a parallel flat dielectric barrier structure and comprises a high-voltage electrode and a grounding electrode which are covered with a barrier dielectric, the distance between the high-voltage electrode and the grounding electrode is 5mm to 10mm, and the electrode length is 5cm to 50 cm.
7. The device for modifying the surface of a material by direct fluorination and plasma according to any one of claims 1 to 5, wherein the plasma activation unit is a planar sandwich structure with dielectric barrier, and comprises a high voltage electrode, a barrier dielectric and a grounded screen electrode which are closely attached to form a sandwich structure unit, the two sandwich structure units are arranged in parallel, and the two grounded screen electrodes are arranged on opposite surfaces to form a parallel processing channel, and the gap between the parallel processing channels is 5mm to 10 mm.
8. The apparatus for modifying material surface by direct fluorination cooperative plasma according to any one of claims 1-5, wherein the plasma activating unit is a corona dielectric barrier structure, the barrier dielectric comprising a needle electrode array connected to a high voltage and a nano-pore structure forms a discharge unit, two discharge units are arranged in parallel, and the barrier dielectric of the two nano-pore structures is arranged on the opposite side to form a flat plate type processing channel, and the gap of the processing channel is 5mm-10 mm.
9. The device for modifying the surface of a material by direct fluorination and cooperative plasma according to any one of claims 1 to 5, wherein the plasma activating unit is a jet type structure.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6299787B1 (en) * | 1996-05-02 | 2001-10-09 | Commonwealth Scientific And Industrial Research Organisation | Surface modification of polymers |
| CN102575333A (en) * | 2009-10-01 | 2012-07-11 | 3M创新有限公司 | Method of making coated metal articles |
| CN202989641U (en) * | 2012-09-20 | 2013-06-12 | 苏州市奥普斯等离子体科技有限公司 | Device using plasma graft polymerization to conduct material surface modification at normal pressure |
| CN105761857A (en) * | 2016-02-24 | 2016-07-13 | 西安交通大学 | Method for fluorinating insulator through use of CF4 plasma |
| CN107057104A (en) * | 2017-01-20 | 2017-08-18 | 复旦大学 | A kind of method for improving polymeric membrane water barrier |
| CN208649181U (en) * | 2017-12-13 | 2019-03-26 | 中国人民解放军空军工程大学 | A kind of surface layer reforming apparatus extending polyimide media barrier discharge plasma driver service life |
| CN109913055A (en) * | 2019-03-01 | 2019-06-21 | 西安交通大学 | It is a kind of improve polymer insulation along the face rice of resistance to susceptance modified membrane preparation method |
-
2019
- 2019-09-27 CN CN201910927704.6A patent/CN110718438B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6299787B1 (en) * | 1996-05-02 | 2001-10-09 | Commonwealth Scientific And Industrial Research Organisation | Surface modification of polymers |
| CN102575333A (en) * | 2009-10-01 | 2012-07-11 | 3M创新有限公司 | Method of making coated metal articles |
| CN202989641U (en) * | 2012-09-20 | 2013-06-12 | 苏州市奥普斯等离子体科技有限公司 | Device using plasma graft polymerization to conduct material surface modification at normal pressure |
| CN105761857A (en) * | 2016-02-24 | 2016-07-13 | 西安交通大学 | Method for fluorinating insulator through use of CF4 plasma |
| CN107057104A (en) * | 2017-01-20 | 2017-08-18 | 复旦大学 | A kind of method for improving polymeric membrane water barrier |
| CN208649181U (en) * | 2017-12-13 | 2019-03-26 | 中国人民解放军空军工程大学 | A kind of surface layer reforming apparatus extending polyimide media barrier discharge plasma driver service life |
| CN109913055A (en) * | 2019-03-01 | 2019-06-21 | 西安交通大学 | It is a kind of improve polymer insulation along the face rice of resistance to susceptance modified membrane preparation method |
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