CN110620069A - System and method for wet processing of wafers - Google Patents
System and method for wet processing of wafers Download PDFInfo
- Publication number
- CN110620069A CN110620069A CN201911002059.3A CN201911002059A CN110620069A CN 110620069 A CN110620069 A CN 110620069A CN 201911002059 A CN201911002059 A CN 201911002059A CN 110620069 A CN110620069 A CN 110620069A
- Authority
- CN
- China
- Prior art keywords
- wafer
- suction plate
- liquid
- spray
- bearing suction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 30
- 235000012431 wafers Nutrition 0.000 title claims description 174
- 239000007788 liquid Substances 0.000 claims abstract description 131
- 239000007921 spray Substances 0.000 claims abstract description 105
- 238000005507 spraying Methods 0.000 claims abstract description 73
- 238000005530 etching Methods 0.000 claims abstract description 41
- 238000004140 cleaning Methods 0.000 claims description 43
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 22
- 238000009826 distribution Methods 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 8
- 238000005406 washing Methods 0.000 abstract 1
- 230000000149 penetrating effect Effects 0.000 description 5
- 238000003672 processing method Methods 0.000 description 4
- 230000005484 gravity Effects 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a wet processing system and a method for a wafer, wherein the wet processing system for the wafer comprises the following steps: the spray header is provided with at least one spray hole and is used for spraying liquid to be sprayed; the vacuum chuck is located below the spray header and comprises a bearing suction plate and a shell, the shell and the bearing suction plate form a cavity of the vacuum chuck, the bearing suction plate is further provided with at least one through hole which is communicated with the cavity, and the bearing suction plate is used for placing the wafer. The problem of wafer washing and/or etching are inhomogeneous is solved, the effect of the yields, quality and the reliability of improvement wafer has been reached.
Description
Technical Field
Embodiments of the present invention relate to a wafer wet processing technology, and more particularly, to a wafer wet processing system and method.
Background
In the prior art, when cleaning or etching a wafer in a wafer production process, a "water tank soaking" method in a traditional silicon process is generally adopted, referring to fig. 1, in the method, a plurality of wafers 1 are longitudinally placed in a wafer basket 12, then the wafers 11 and the wafer basket 12 are simultaneously immersed in a chemical tank 13 containing a cleaning solution or an etching solution 14, and after a period of time, the wafers 11 and the wafer basket 12 are taken out. The lower end of the wafer cleaned and/or etched by the method is firstly connected with cleaning solution or etching solution and finally separated from the cleaning solution or etching solution; the upper end of the wafer is contacted with the cleaning solution or the etching solution at last, and the cleaning solution or the etching solution is separated at first; and the cleaning solution or the etching solution flows from top to bottom when the wafer is taken out, which causes the time difference of each cleaning or etching process on the wafer, so that the cleaning degree or the etching degree of the upper and lower positions of the wafer is different, which causes the uneven cleaning or etching of the wafer and causes the difference of the structure and the performance of the wafer prepared by the same parameter.
In an actual production process, the cleaning solution or the etching solution in the tank is usually replaced for a fixed period (e.g. 24 h/time) or once after processing lots of wafers for cost control. The method can also change the concentration of the cleaning solution along with the continuous use of the cleaning solution, so that particles and impurities become dirty, finally, the cleaning or etching degrees of wafers in different batches are different, and the yield, the quality and the reliability of the wafers are reduced.
Disclosure of Invention
The invention provides a wet processing system and a wet processing method for wafers, which are used for achieving the effects of improving the yield, quality and reliability of the wafers.
In a first aspect, an embodiment of the present invention provides a wet processing system for a wafer, for cleaning and/or etching the wafer, including:
the spray header is provided with at least one spray hole and is used for spraying liquid to be sprayed;
the vacuum chuck is located below the spray header and comprises a bearing suction plate and a shell, the shell and the bearing suction plate form a cavity of the vacuum chuck, the bearing suction plate is further provided with at least one through hole which is communicated with the cavity, and the bearing suction plate is used for placing the wafer.
Optionally, the wet processing system of the wafer further includes:
the spraying head is communicated with the at least one liquid barrel through a liquid inlet pipe.
Optionally, the wet processing system of the wafer further includes:
the vacuum pressure sensor is arranged in the cavity of the vacuum chuck and used for detecting the vacuum pressure of the cavity of the vacuum chuck;
the vacuum pump is connected with the cavity of the vacuum sucker through an exhaust pipe and is used for exhausting the cavity of the vacuum sucker so as to adsorb the wafer through at least one through hole of the bearing suction plate;
and the vacuum valve is arranged on the exhaust tube and used for controlling the exhaust flow.
Optionally, the bearing suction plate further comprises:
and the weight sensor is used for detecting the weight of the wafer placed on the bearing suction plate.
Optionally, the wet processing system of the wafer further includes:
and the spraying switch is arranged on the liquid inlet pipe and used for controlling the spraying flow of the liquid to be sprayed.
Optionally, the at least one spray aperture further comprises:
and the spraying hole switch is used for controlling the working state of the at least one spraying hole with preset distribution positions and preset quantity.
Optionally, the liquid to be sprayed includes one or more of a cleaning liquid, an etching liquid, or DI pure water.
In a second aspect, an embodiment of the present invention further provides a wet processing method for a wafer, for cleaning and/or etching the wafer, including:
judging whether the wafer is placed on a bearing suction plate, wherein the bearing suction plate at least comprises a through hole;
if so, sequentially starting a vacuum pump to pump air from the through holes so as to adsorb the wafers on the bearing suction plate;
detecting the pressure value of the through hole, and judging whether the wafer is fixed on the bearing suction plate or not according to the pressure value;
if yes, the first spraying switch is turned on to spray the first liquid to be sprayed through the at least one spraying hole to process the wafer.
According to the technical scheme, the vacuum chuck is arranged below the water outlet of the spray head to horizontally adsorb and hold the wafer, so that each area on the surface of the wafer can be contacted with the cleaning solution or the etching solution at the same time and is very uniform (the same time, the same concentration and the same proportion), the problem of non-uniformity in wafer cleaning and/or etching is solved, and the effects of improving the yield, the quality and the reliability of the wafer are achieved.
Drawings
FIG. 1 is a schematic view of a prior art "sink soaking" device;
FIG. 2 is a schematic diagram of a wafer wet processing system according to one embodiment of the present invention;
FIG. 3 is a schematic view of a wafer wet processing system according to a second embodiment of the present invention;
FIG. 4 is a schematic view of a wafer wet processing system according to a second embodiment of the present invention;
FIG. 5 is a schematic view of a wafer wet processing system according to a second embodiment of the present invention;
FIG. 6 is a schematic view of a wafer wet processing system according to a second embodiment of the present invention;
FIG. 7 is a schematic view of a wafer wet processing system according to a second embodiment of the present invention;
FIG. 8 is a schematic view of a wafer wet processing system according to a second embodiment of the present invention;
FIG. 9 is a schematic view of a wafer wet processing system according to a second embodiment of the present invention;
FIG. 10 is a schematic view of a wafer wet processing system according to a second embodiment of the present invention;
FIG. 11 is a flowchart of a method for wet processing a wafer according to a third embodiment of the present invention;
FIG. 12 is a flowchart of a method for wet processing a wafer according to a third embodiment of the present invention;
FIG. 13 is a flowchart of a method for wet processing a wafer according to a third embodiment of the present invention;
FIG. 14 is a flowchart of a method for wet processing a wafer according to a third embodiment of the present invention;
Detailed Description
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and not restrictive thereof. It should also be noted that the described embodiments are only some embodiments, not all embodiments, of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without inventive step, are within the scope of the present invention.
Furthermore, the terms "first," "second," and the like may be used herein to describe various orientations, actions, steps, elements, or the like, but the orientations, actions, steps, or elements are not limited by these terms. These terms are only used to distinguish one direction, action, step or element from another direction, action, step or element. For example, the first tank may be referred to as a second tank, and similarly, the second tank may be referred to as a first tank, without departing from the scope of the present disclosure. The first and second barrels are both barrels, but they are not the same barrel. The terms "first", "second", etc. are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise. It should be noted that when a portion is referred to as being "secured to" another portion, it can be directly on the other portion or there can be an intervening portion. When a portion is said to be "connected" to another portion, it may be directly connected to the other portion or intervening portions may be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only and do not denote a unique embodiment.
Before discussing exemplary embodiments in more detail, it should be noted that some exemplary embodiments are described as processes or methods depicted as flowcharts. Although a flowchart may describe the steps as a sequential process, many of the steps can be performed in parallel, concurrently or simultaneously. In addition, the order of the steps may be rearranged. A process may be terminated when its operations are completed, but may have additional steps not included in the figure.
Example one
Fig. 2 is a wet processing system for wafers, for cleaning and/or etching wafers, according to an embodiment of the present invention, which includes: a showerhead 22 and a vacuum chuck 24.
The spray header 22 is provided with at least one spray hole, and the spray header 22 is connected with at least one liquid barrel 21 through a liquid inlet pipe 231. Specifically, the method comprises the following steps. The shower head 22 is connected to the liquid inlet pipe 231 to supply a cleaning solution through the liquid inlet pipe 231, and the solution to be sprayed includes one or more of the cleaning solution, the etching solution, or DI pure water; at least one spray hole is uniformly distributed on the spray head 22 in a large quantity and can be distributed in a circle shape to be enlarged layer by layer from inside to outside, and the spray head is a Teflon spray head 22. In other embodiments, the wet processing system for wafers further comprises a spraying switch 23 disposed on the liquid inlet pipe 231 for controlling the flow rate of the spraying liquid to be sprayed.
The vacuum chuck 24 is located below the shower head 22, the vacuum chuck 24 includes a bearing suction plate 251 and a housing, the housing and the bearing suction plate 251 form or enclose a cavity of the vacuum chuck 24, the bearing suction plate 251 is further provided with at least one through hole 252 penetrating through the cavity, and the bearing suction plate 251 is used for placing a wafer. Specifically, the bearing suction plate 251 of the vacuum chuck 24 is installed upward perpendicular to the gravity direction, the cavity of the vacuum chuck 24 is installed below the bearing suction plate, and at least one through hole 252 penetrating through the cavity is uniformly distributed on the bearing suction plate 251.
Specifically, the spray header 22 and the bearing suction plate 251 are circular, wherein the water outlet of the spray header 22 faces the bearing suction plate 251, and the diameter of the spray header 22 is larger than that of the bearing suction plate 251.
Illustratively, when it is desired to clean and/or etch a wafer, the wafer is placed on the carrier suction plate 251 of the vacuum chuck 24; after adsorbing the wafer through at least one through hole 252 of the bearing suction plate 251, turning on the spray switch 23, and spraying the liquid to be sprayed out from at least one spraying hole of the spray head 22 through the liquid inlet pipe 231; spraying the liquid to be sprayed from the at least one spraying hole onto the wafer, and cleaning or etching the wafer; after the cleaning or etching is completed (i.e. the spraying is completed), the spraying switch 23 is turned off to complete the cleaning or etching of the wafer.
According to the technical scheme of the embodiment, the vacuum chuck 24 is arranged below the water outlet of the spray head 22 and horizontally adsorbs and holds the wafer, so that all areas on the surface of the wafer can be simultaneously contacted with the cleaning solution or the etching solution to be cleaned very uniformly (at the same time, concentration and proportion), the problem of non-uniformity in wafer cleaning and/or etching is solved, and the effects of improving the yield, quality and reliability of the wafer are achieved.
Example two
Fig. 3 and fig. 4 are schematic views illustrating a wet processing system for wafers according to a second embodiment of the present invention, for cleaning and/or etching wafers, which includes: at least one liquid barrel 21, a spray head 22, a spray switch 23, a vacuum chuck 24, a vacuum pressure sensor 25, a vacuum pump 26, a vacuum valve 27 and an upper computer 28.
The at least one liquid tank 21 is used for containing a liquid to be sprayed, which includes one or more of a cleaning liquid, an etching liquid, or DI pure water.
The spray header 22 is provided with at least one spray hole, and the spray header 22 is connected with at least one liquid barrel 21 through a liquid inlet pipe 231. Specifically, the spray holes are uniformly distributed on the spray head 22 in a large number and can be distributed in a circle shape to be enlarged layer by layer from inside to outside, and the spray head is a teflon spray head 22.
And the spraying switch 23 is arranged on the liquid inlet pipe 231 and used for controlling the spraying flow of the liquid to be sprayed. Specifically, the spray switch 23 is disposed below the at least one liquid tank 21 or around the tank wall.
Illustratively, referring to fig. 5, when only pure water is needed for cleaning, there is at least one liquid tank 21, the pure water is contained in the liquid tank 21, and when pure water is needed to be sprayed, the spray switch 23 is turned on, and the pure water is sprayed out from at least one spray hole of the spray header 22 through the liquid inlet pipe 231.
Illustratively, referring collectively to fig. 6, when multiple cleaning or etching is required, there are at least two liquids to be sprayed and at least two liquid barrels 21. In the embodiment, three kinds of spraying liquids are taken as an example, a first liquid to be sprayed is contained in the first liquid tank 211, a second liquid to be sprayed is contained in the second liquid tank 212, and a third liquid to be sprayed is contained in the third liquid tank 213; the first liquid barrel 211, the second liquid barrel 212 and the third liquid barrel 213 are respectively connected with the spray header 22 through different liquid inlet pipes 231; the liquid inlet pipes 231 between the first liquid barrel 211, the second liquid barrel 212 and the third liquid barrel 213 and the spray head 22 are respectively provided with a first spray switch 2331, a second spray switch 2332 and a third spray switch 2333, in other embodiments, referring to fig. 7, the spray head 22 is connected with the main liquid inlet pipe 2311, the first liquid barrel 211, the second liquid barrel 212 and the third liquid barrel 213 are respectively connected with the main liquid inlet pipe 2311 through the liquid inlet pipes, and the liquid inlet pipes between the first liquid barrel 211, the second liquid barrel 212 and the third liquid barrel 213 and the main liquid inlet pipe 2311 are respectively provided with a first spray switch 2331, a second spray switch 2332 and a third spray switch 2333. When a first liquid to be sprayed, a second liquid to be sprayed and a third liquid to be sprayed need to be sprayed in sequence, a first spray switch 2331 is turned on first, the first liquid to be sprayed is sprayed out from at least one spray hole of the spray header 22 through a liquid inlet pipe, and the first spray switch 2331 is turned off after spraying is finished; then, the second spray switch 2332 is turned on, the second liquid to be sprayed is sprayed out from at least one spray hole of the spray head 22 through the liquid inlet pipe 231, and after the spraying is finished, the second spray switch 2332 is turned off; finally, the third spray switch 2333 is turned on, the third liquid to be sprayed is sprayed out from at least one spray hole of the spray head 22 through the liquid inlet pipe, and after the spraying is finished, the third spray switch 2333 is turned off. Meanwhile, the plurality of liquid barrels are arranged, so that the situation that when the wafers are processed by various cleaning liquids and/or etching liquids, the wafers can be replaced by the various cleaning liquids and/or the etching liquids by controlling the spray switch can be avoided, the manual replacement time is shortened, and the efficiency is improved.
The vacuum chuck 24 is located below the shower head 22, the vacuum chuck 24 includes a bearing suction plate 251 and a housing, the housing and the bearing suction plate 251 form or enclose a cavity of the vacuum chuck 24, the bearing suction plate 251 is further provided with at least one through hole 252 penetrating through the cavity, and the bearing suction plate 251 is used for placing a wafer. Specifically, the bearing suction plate 251 of the vacuum chuck 24 is installed upward perpendicular to the gravity direction, the cavity of the vacuum chuck 24 is installed below the bearing suction plate, and at least one through hole 252 penetrating through the cavity is uniformly distributed on the bearing suction plate 251.
Specifically, the spray header 22 and the bearing suction plate 251 are circular, wherein the water outlet of the spray header 22 faces the bearing suction plate 251, and the diameter of the spray header 2 is larger than that of the bearing suction plate 251.
And the vacuum pressure sensor 25 is arranged in the cavity of the vacuum chuck 24 and is used for detecting the vacuum pressure of the cavity of the vacuum chuck 24. The vacuum pressure sensor 25 may also be mounted in at least one through hole of the through cavity on the carrier suction plate 251.
And the vacuum pump 26 is connected with the cavity of the vacuum chuck 24 through an exhaust pipe and is used for exhausting the cavity of the vacuum chuck 24 so as to adsorb the wafer through the through hole of the bearing suction plate 251. The exemplary vacuum pump 26 is a mechanical pump.
The vacuum valve 27 is arranged on the air exhaust pipe and used for controlling the air exhaust flow;
and the upper computer 28 is connected with the vacuum pump 26, the vacuum valve 27 and the spray switch 23 and is used for controlling the working states of the vacuum pump 26, the vacuum valve 27 and the spray switch 23. Specifically, the upper computer 28 controls the on state or the off state of the vacuum pump 26, the on state (e.g., fully open, half open) or the off state of the vacuum valve 27, and the on state (e.g., fully open, half open) or the off state of the shower switch 23 according to a preset program.
Illustratively, when it is desired to clean and/or etch a wafer, the wafer is placed on the carrier suction plate 251 of the vacuum chuck 24; after the wafer is placed on the bearing suction plate 251, starting the vacuum pump 26, and the vacuum pump 26 performing air suction on the cavity of the vacuum chuck 24 and the at least one through hole 252 penetrating through the cavity so as to adsorb the wafer through the at least one through hole 252 of the bearing suction plate 251; after the wafer is adsorbed on the bearing suction plate 251, the spraying switch 23 is turned on, and the liquid to be sprayed, which is contained in at least one liquid barrel 21, is sprayed out from at least one spraying hole of the spraying head 22 through the liquid inlet pipe 231; spraying the liquid to be sprayed from the at least one spraying hole onto the wafer, and cleaning or etching the wafer; after the cleaning or etching is completed (i.e. the spraying is completed), the spraying switch 23 is turned off to complete the cleaning or etching of the wafer.
According to the technical scheme of the embodiment, the vacuum chuck 24 is arranged below the water outlet of the spray head 22 and horizontally adsorbs and holds the wafer, so that all areas on the surface of the wafer can be simultaneously contacted with the cleaning solution or the etching solution to be cleaned very uniformly (at the same time, concentration and proportion), the problem of non-uniformity in wafer cleaning and/or etching is solved, and the effects of improving the yield, quality and reliability of the wafer are achieved.
In an alternative embodiment, referring to fig. 8, the load-bearing suction plate 251 further includes a weight sensor 29 for detecting the weight of the wafer placed on the load-bearing suction plate 251. Illustratively, after the wafer is placed on the load-bearing suction plate 251, the weight sensor 29 detects a weight signal of the wafer, the upper computer 28 determines whether the wafer is already placed on the load-bearing suction plate 251 according to the weight signal, and after the upper computer 28 determines that the wafer is already placed on the load-bearing suction plate 251, the vacuum pump 26 and/or the vacuum valve 27 are opened to perform subsequent steps.
In an alternative embodiment, referring to fig. 9, the at least one spray orifice further comprises: and the spraying hole switch is connected with the upper computer 28 and is used for controlling the number and the distribution position of at least one spraying hole in a working state. Specifically, the number and distribution of the spray holes are set according to the position of the wafer on the vacuum chuck 24 and the size of the wafer itself. For example, for a 6 inch wafer, the showerhead may be configured such that 360 spray holes are open in the center of the showerhead. In the alternative embodiment, the problem of positioning spraying of the spraying head is solved by arranging the spraying hole switch, so that the effects of spraying water in a specified area and saving liquid to be sprayed are realized.
In an alternative embodiment, the area or size type of the wafer can be judged according to the weight of the wafer, and then the working states of the preset distribution positions and the preset number of spraying holes are controlled, so that the spraying holes in the spraying state are matched with the area of the wafer, and the use of spraying liquid is saved to the greatest extent.
In an alternative embodiment, an image acquisition module is further disposed above the bearing suction plate 251, and the image acquisition module is connected to the upper computer and is used for acquiring images on the bearing suction plate 251. Specifically, the image acquisition module acquires an image on the bearing suction plate, and judges whether the image on the bearing suction plate 251 includes a wafer, if so, the upper computer analyzes the diameter of the wafer and the position of the wafer on the bearing suction plate 251 according to the acquired image, and the upper computer sets the opening number and the distribution position of the at least one spraying hole in a working state according to the position of the diameter wafer of the wafer on the bearing suction plate 251.
In an alternative embodiment, referring to fig. 10, the wafer wet processing system further includes a robot arm 200 connected to the upper computer 28, and the upper computer is further configured to control the robot arm 200 to transfer the wafer onto the load-bearing suction plate 251.
EXAMPLE III
Fig. 11 is a wet processing method for a wafer according to a third embodiment of the present invention, for cleaning and/or etching the wafer, where the wet processing method for the wafer according to the present embodiment can be controlled by an upper computer, and includes:
step 202, judging whether the wafer is placed on a bearing suction plate, wherein the bearing suction plate comprises at least one through hole.
In this embodiment, bear the weight of the suction disc and be located vacuum chuck, vacuum chuck still includes the casing, casing and bear the weight of the cavity that the suction disc constitutes vacuum chuck, and at least one through-hole sets up on bearing the weight of the suction disc and link up vacuum chuck's cavity, and is specific, vacuum chuck's bearing the weight of the suction disc perpendicular to gravity direction installation up. In this embodiment, determining whether the wafer is placed on the load-bearing suction plate includes: judging whether the wafer is placed on the bearing suction plate or not according to the detection signal of the weight sensor; and/or judging whether the wafer is placed on the bearing suction plate according to the collected image on the bearing suction plate;
illustratively, the weight sensor is located on the load-bearing suction plate and is used for detecting the weight of the wafer placed on the load-bearing suction plate. For example, after the wafer is placed on the bearing suction plate, the weight sensor detects a weight signal of the wafer, and the upper computer judges whether the wafer is already placed on the bearing suction plate according to the weight signal.
Illustratively, an image acquisition module is further arranged above the bearing suction plate, and the image acquisition module is connected with the upper computer and is used for acquiring images on the bearing suction plate. The method specifically comprises the following steps:
a1: the image acquisition module acquires an image on the bearing suction plate;
a2: the upper computer judges whether the wafer is placed on the bearing suction plate or not by judging whether the wafer is included in the image on the bearing suction plate or not.
And step 204, if yes, sequentially starting a vacuum pump to pump air from the through holes so as to adsorb the wafers on the bearing suction plate.
In this embodiment, after the upper computer determines that the wafer has been placed on the load-bearing suction plate, the vacuum pump is turned on. The vacuum chuck is connected with the cavity of the vacuum chuck through the exhaust tube and is used for exhausting air to the cavity of the vacuum chuck so as to adsorb the wafer through the through hole of the bearing suction plate. An exemplary vacuum pump is a mechanical pump. In other embodiments, a vacuum valve is further arranged on the exhaust pipe between the vacuum pump and the through hole for controlling the exhaust flow.
Step 206, detecting the vacuum pressure value of the through hole, and judging whether the wafer is fixed on the bearing suction plate according to the vacuum pressure value;
in this embodiment, the vacuum pressure value of through-hole is detected by setting up vacuum pressure sensor in vacuum chuck's through-hole, and vacuum pressure sensor can also install in vacuum chuck's cavity in other embodiments. Illustratively, after the wafer adsorbs on bearing the suction plate, the vacuum pressure value of through-hole is detected to the vacuum pressure sensor, and the host computer judges whether the wafer has adsorbed on bearing the suction plate according to whether the vacuum pressure value of through-hole is greater than the preset value.
And 208, if so, turning on the first spraying switch to spray the first liquid to be sprayed to process the wafer through the at least one spraying hole.
In this embodiment, the spray header and the bearing suction plate are circular, the water outlet of the spray header faces the bearing suction plate, and the diameter of the spray header is larger than that of the bearing suction plate. The liquid to be sprayed comprises one or more of cleaning liquid, etching liquid or DI pure water, and is contained in at least one liquid barrel. The spray header is provided with at least one spray hole and is connected with at least one liquid barrel through a liquid inlet pipe. And the spraying switch is arranged on the liquid inlet pipe and used for controlling the spraying flow of the liquid to be sprayed. Specifically, the spray switch is arranged below at least one liquid barrel or around the barrel wall. Exemplarily, when treating to spray liquid for the pure water, the inside pure water that holds of liquid bucket when the pure water is sprayed to needs, opens the spray switch, and the pure water passes through the feed liquor pipe, sprays the hole blowout in order to process the wafer from at least one of shower head.
According to the technical scheme, the wafer is horizontally adsorbed on the bearing suction plate, the liquid to be sprayed is directly sprayed to process the wafer, all areas on the surface of the wafer can be simultaneously contacted with the liquid to be cleaned or the etching liquid to be uniformly sprayed (the same time, the same concentration and the same proportion), the problem that the wafer is not uniformly cleaned and/or etched is solved, and the effects of improving the yield, the quality and the reliability of the wafer are achieved.
In an alternative embodiment, referring to fig. 12, after step 208, the method further comprises:
step 210, after a first preset time, closing a first spraying switch;
step 212, turning on a second spraying switch to spray a second liquid to be sprayed through at least one spraying hole;
and step 214, after the second preset time, closing the second spraying switch.
In the alternative embodiment, the first liquid to be sprayed is contained in the first liquid barrel, and the second liquid to be sprayed is contained in the second liquid barrel; the first liquid barrel and the second liquid barrel are respectively connected with the spray header through liquid inlet pipes; the liquid inlet pipe between the first liquid barrel and the spray header and the liquid inlet pipe between the second liquid barrel and the spray header are respectively provided with a first spray switch and a second spray switch. When a first liquid to be sprayed, a second liquid to be sprayed and a third liquid to be sprayed are required to be sprayed in sequence, a first spraying switch is turned on firstly, the first liquid to be sprayed is sprayed out from at least one spraying hole of the spraying head through a liquid inlet pipe, and the first spraying switch is turned off after spraying is finished; and then the second spray switch is opened, the second liquid to be sprayed is sprayed out from at least one spray hole of the spray head through the liquid inlet pipe, and the second spray switch is closed after the spraying is finished.
In other embodiments, referring to fig. 13, after step 214, the method further comprises:
step 216, turning on a third spraying switch to spray a third liquid to be sprayed through at least one spraying hole;
and step 218, after a third preset time, closing the third spray switch.
In this alternative embodiment, referring to fig. 13, the wafer is processed by different liquids to be sprayed, so that the wafer cleaning and/or etching process can be completed at one time, the frequency of repeatedly replacing the liquids to be sprayed in the liquid barrel is reduced, the labor and time are saved, and the wafer processing efficiency is improved.
In an alternative embodiment, step 202 is preceded by:
step 102, the wafer is moved onto the load-bearing suction plate by using a mechanical arm.
In this alternative embodiment, the wafer is placed on the load-bearing suction plate by using the robot arm, and the side of the wafer having the chip faces upward, and the back face of the wafer faces downward and is tightly attached to the load-bearing suction plate.
And 104, acquiring the diameter of the wafer and/or the position of the wafer on the bearing suction plate.
In the alternative embodiment, the diameter of the wafer can be judged by the upper computer according to the weight signal of the wafer detected by the weight sensor, and then the working states of the preset distribution positions and the preset number of spraying holes are controlled, so that the spraying holes in the spraying state and the area of the wafer are matched with each other, and the use of spraying liquid is saved to the greatest extent.
In the alternative embodiment, an image acquisition module can be arranged above the bearing suction plate and connected with an upper computer for acquiring images on the bearing suction plate. The diameter and the position of the wafer can be obtained by an upper computer through analyzing images on the bearing suction plate, and the method specifically comprises the following steps:
a1: the image acquisition module acquires an image on the bearing suction plate;
a2: the upper computer judges whether the wafer is placed on the bearing suction plate or not by judging whether the wafer is included in the image on the bearing suction plate or not.
A3: if so, the upper computer analyzes the diameter of the wafer and the position of the wafer on the bearing suction plate according to the acquired image.
And 106, setting the opening number and the distribution position of at least one spraying hole in the working state according to the diameter of the wafer and/or the position of the wafer on the bearing suction plate.
Illustratively, the number and distribution of the spray holes is set according to the position of the wafer on the vacuum chuck and the size of the wafer itself. For example, for processing a 6-inch wafer, the showerhead may be set such that 360 spray holes are open in the center of the showerhead and 720 spray holes are closed at the periphery of the showerhead; for processing 10 inch wafers, the showerhead may be set such that 720 orifices in the center of the showerhead are open and 360 orifices around the periphery of the showerhead are closed. The number of the opened or closed spray holes of the present embodiment is for illustration only and is not a limitation of the present embodiment.
According to the technical scheme of the alternative embodiment, the wafer can be more accurately moved onto the bearing suction plate by arranging the mechanical arm, and errors caused by manual labor are reduced. Through setting up the hole switch that sprays, solved the problem that the sprinkler head location was sprayed, realized spraying water in appointed area, practice thrift the effect of treating the spraying liquid.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A wet processing system for wafers used to clean and/or etch wafers, comprising:
the spray header is provided with at least one spray hole and is used for spraying liquid to be sprayed;
the vacuum chuck is located below the spray header and comprises a bearing suction plate and a shell, the shell and the bearing suction plate form a cavity of the vacuum chuck, the bearing suction plate is further provided with at least one through hole which is communicated with the cavity, and the bearing suction plate is used for placing the wafer.
2. The system of claim 1, further comprising:
and the spray head is communicated with the at least one liquid barrel through a liquid inlet pipe.
3. The system of claim 1, further comprising:
the vacuum pressure sensor is arranged in the cavity of the vacuum sucker and used for detecting the vacuum pressure of the cavity of the vacuum sucker;
the vacuum pump is connected with the cavity of the vacuum sucker through an exhaust pipe and is used for exhausting the cavity of the vacuum sucker so as to adsorb the wafer through at least one through hole of the bearing suction plate;
and the vacuum valve is arranged on the exhaust tube and used for controlling the exhaust flow.
4. The wafer wet processing system of claim 1, wherein said load-bearing suction plate further comprises:
and the weight sensor is used for detecting the weight of the wafer placed on the bearing suction plate.
5. The system of claim 1, further comprising:
and the spraying switch is arranged on the liquid inlet pipe and used for controlling the spraying flow of the liquid to be sprayed.
6. The wet processing system of claim 1, wherein said at least one spray orifice further comprises:
and the spraying hole switch is used for controlling the working state of the at least one spraying hole with preset distribution positions and preset quantity.
7. The wafer wet processing system of claim 1, wherein said liquid to be sprayed comprises one or more of a cleaning liquid, an etching liquid, or DI pure water.
8. A method of wet processing a wafer using the wafer wet processing system of any one of claims 1-7 for cleaning and/or etching the wafer, comprising:
judging whether the wafer is placed on a bearing suction plate, wherein the bearing suction plate comprises at least one through hole;
if so, sequentially starting a vacuum pump to pump air from the through holes so as to adsorb the wafers on the bearing suction plate;
detecting the vacuum pressure value of the through hole, and judging whether the wafer is fixed on the bearing suction plate or not according to the pressure value;
if yes, the first spraying switch is turned on to spray the first liquid to be sprayed through the at least one spraying hole to process the wafer.
9. The wafer wet processing system of claim 8, wherein said turning on the first spray switch to spray the first liquid to be sprayed through the at least one spray hole further comprises:
after the first preset time, closing the first spraying switch;
turning on a second spray switch to spray a second liquid to be sprayed through at least one spray hole;
and after the second preset time, closing the second spraying switch.
10. The wafer wet processing system of claim 8, wherein said determining whether a wafer is placed on a load-bearing suction plate comprises:
judging whether the wafer is placed on the bearing suction plate or not according to the detection signal of the weight sensor; and/or
And judging whether the wafer is placed on the bearing suction plate or not according to the acquired image on the bearing suction plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911002059.3A CN110620069B (en) | 2019-10-21 | 2019-10-21 | Wafer wet processing system and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911002059.3A CN110620069B (en) | 2019-10-21 | 2019-10-21 | Wafer wet processing system and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110620069A true CN110620069A (en) | 2019-12-27 |
| CN110620069B CN110620069B (en) | 2024-07-23 |
Family
ID=68926191
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911002059.3A Active CN110620069B (en) | 2019-10-21 | 2019-10-21 | Wafer wet processing system and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110620069B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111668096A (en) * | 2020-06-22 | 2020-09-15 | 徐文凯 | Etching method and device for third-generation semiconductor |
| CN114188245A (en) * | 2021-11-30 | 2022-03-15 | 北京北方华创微电子装备有限公司 | Wafer cleaning equipment and wafer cleaning method |
| CN117153739A (en) * | 2023-10-31 | 2023-12-01 | 沈阳芯达科技有限公司 | Wafer cleaning device |
Citations (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0621040A (en) * | 1992-07-02 | 1994-01-28 | Nec Corp | Jet type wet etching device |
| JPH11163093A (en) * | 1997-11-28 | 1999-06-18 | Nissin Electric Co Ltd | Substrate carrying robot |
| KR20010090997A (en) * | 2000-04-10 | 2001-10-22 | 윤종용 | Multi-touch point vacuum chuck system applying to semiconductor fabrication equipment |
| JP2003031459A (en) * | 2001-07-11 | 2003-01-31 | Tokyo Electron Ltd | Liquid processing apparatus |
| JP2004247746A (en) * | 2004-03-22 | 2004-09-02 | Dainippon Screen Mfg Co Ltd | Substrate processing equipment |
| US20070076345A1 (en) * | 2005-09-20 | 2007-04-05 | Bang Won B | Substrate placement determination using substrate backside pressure measurement |
| JP2011216520A (en) * | 2010-03-31 | 2011-10-27 | Dainippon Screen Mfg Co Ltd | Substrate holding rotating device and substrate processing apparatus |
| CN102319686A (en) * | 2011-08-26 | 2012-01-18 | 上海宏力半导体制造有限公司 | Wafer cleaning device and wafer cleaning method |
| CN102468206A (en) * | 2010-11-18 | 2012-05-23 | 中芯国际集成电路制造(上海)有限公司 | Wafer base, and using and cleaning method thereof |
| JP2012186221A (en) * | 2011-03-03 | 2012-09-27 | Tokyo Electron Ltd | Etching method, etching apparatus, and storage medium |
| CN204407301U (en) * | 2014-12-31 | 2015-06-17 | 上海新阳半导体材料股份有限公司 | Wafer cleaning device |
| JP2016072609A (en) * | 2014-09-29 | 2016-05-09 | 株式会社Ｓｃｒｅｅｎホールディングス | Wafer processing method and wafer processing apparatus |
| CN205863147U (en) * | 2016-06-15 | 2017-01-04 | 苏州宝馨科技实业股份有限公司 | A kind of Novel silicon slice cleans device |
| KR20170020022A (en) * | 2015-08-13 | 2017-02-22 | 세메스 주식회사 | Substrate treating method for selectively etching a substrate surfaces |
| JP2018164037A (en) * | 2017-03-27 | 2018-10-18 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing method, substrate processing device, and program recording medium |
| CN109950180A (en) * | 2019-03-27 | 2019-06-28 | 德淮半导体有限公司 | Wafer etching device and wafer lithographic method |
| US20190252236A1 (en) * | 2018-02-09 | 2019-08-15 | Toshiba Memory Corporation | Semiconductor processing apparatus and semiconductor processing method |
| WO2019198869A1 (en) * | 2018-04-13 | 2019-10-17 | (주)넥서스원 | Apparatus and method for inspecting edge area of wafer |
| CN210467781U (en) * | 2019-10-21 | 2020-05-05 | 深圳市思坦科技有限公司 | Wet processing system for wafer |
-
2019
- 2019-10-21 CN CN201911002059.3A patent/CN110620069B/en active Active
Patent Citations (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0621040A (en) * | 1992-07-02 | 1994-01-28 | Nec Corp | Jet type wet etching device |
| JPH11163093A (en) * | 1997-11-28 | 1999-06-18 | Nissin Electric Co Ltd | Substrate carrying robot |
| KR20010090997A (en) * | 2000-04-10 | 2001-10-22 | 윤종용 | Multi-touch point vacuum chuck system applying to semiconductor fabrication equipment |
| JP2003031459A (en) * | 2001-07-11 | 2003-01-31 | Tokyo Electron Ltd | Liquid processing apparatus |
| JP2004247746A (en) * | 2004-03-22 | 2004-09-02 | Dainippon Screen Mfg Co Ltd | Substrate processing equipment |
| US20070076345A1 (en) * | 2005-09-20 | 2007-04-05 | Bang Won B | Substrate placement determination using substrate backside pressure measurement |
| JP2011216520A (en) * | 2010-03-31 | 2011-10-27 | Dainippon Screen Mfg Co Ltd | Substrate holding rotating device and substrate processing apparatus |
| CN102468206A (en) * | 2010-11-18 | 2012-05-23 | 中芯国际集成电路制造(上海)有限公司 | Wafer base, and using and cleaning method thereof |
| JP2012186221A (en) * | 2011-03-03 | 2012-09-27 | Tokyo Electron Ltd | Etching method, etching apparatus, and storage medium |
| CN102319686A (en) * | 2011-08-26 | 2012-01-18 | 上海宏力半导体制造有限公司 | Wafer cleaning device and wafer cleaning method |
| JP2016072609A (en) * | 2014-09-29 | 2016-05-09 | 株式会社Ｓｃｒｅｅｎホールディングス | Wafer processing method and wafer processing apparatus |
| CN204407301U (en) * | 2014-12-31 | 2015-06-17 | 上海新阳半导体材料股份有限公司 | Wafer cleaning device |
| KR20170020022A (en) * | 2015-08-13 | 2017-02-22 | 세메스 주식회사 | Substrate treating method for selectively etching a substrate surfaces |
| CN205863147U (en) * | 2016-06-15 | 2017-01-04 | 苏州宝馨科技实业股份有限公司 | A kind of Novel silicon slice cleans device |
| JP2018164037A (en) * | 2017-03-27 | 2018-10-18 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing method, substrate processing device, and program recording medium |
| US20190252236A1 (en) * | 2018-02-09 | 2019-08-15 | Toshiba Memory Corporation | Semiconductor processing apparatus and semiconductor processing method |
| WO2019198869A1 (en) * | 2018-04-13 | 2019-10-17 | (주)넥서스원 | Apparatus and method for inspecting edge area of wafer |
| CN109950180A (en) * | 2019-03-27 | 2019-06-28 | 德淮半导体有限公司 | Wafer etching device and wafer lithographic method |
| CN210467781U (en) * | 2019-10-21 | 2020-05-05 | 深圳市思坦科技有限公司 | Wet processing system for wafer |
Non-Patent Citations (1)
| Title |
|---|
| 李媛;: "半导体硅晶片超精密加工研究", 电子工业专用设备, no. 01 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111668096A (en) * | 2020-06-22 | 2020-09-15 | 徐文凯 | Etching method and device for third-generation semiconductor |
| CN114188245A (en) * | 2021-11-30 | 2022-03-15 | 北京北方华创微电子装备有限公司 | Wafer cleaning equipment and wafer cleaning method |
| CN117153739A (en) * | 2023-10-31 | 2023-12-01 | 沈阳芯达科技有限公司 | Wafer cleaning device |
| CN117153739B (en) * | 2023-10-31 | 2024-01-30 | 沈阳芯达科技有限公司 | Wafer cleaning device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110620069B (en) | 2024-07-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110620069A (en) | System and method for wet processing of wafers | |
| TWI544562B (en) | Substrate liquid processing device and substrate liquid treatment method | |
| US6551488B1 (en) | Segmenting of processing system into wet and dry areas | |
| US8714166B2 (en) | Method and apparatus for showerhead cleaning | |
| WO2019097901A1 (en) | Substrate treatment method and substrate treatment appparatus | |
| CN110718488A (en) | Wafer drying device and method | |
| US11569086B2 (en) | Substrate processing apparatus and substrate processing method | |
| US20070130716A1 (en) | Substrate processing apparatus and substrate processing method | |
| US20040002784A1 (en) | System for and method of processing substrate | |
| KR20210035738A (en) | Substrate processing apparatus | |
| CN210467781U (en) | Wet processing system for wafer | |
| JP2017022197A (en) | Substrate processing apparatus and substrate processing method | |
| US20150101683A1 (en) | Touchless Site Isolation Using Gas Bearing | |
| JP2007149891A (en) | Apparatus and method of processing substrate | |
| JP2007123393A (en) | Substrate-treating device | |
| WO2018205404A1 (en) | Electroplating apparatus and electroplating method for wafer | |
| KR20180118063A (en) | Substrate processing method and substrate processing apparatus | |
| CN116364600A (en) | Apparatus for treating substrate and method for treating substrate | |
| JP2007266553A (en) | Device and method for substrate treatment | |
| KR100598914B1 (en) | System and method for recycling chemical, and apparatus for treating a substrate using the system | |
| CN210467783U (en) | Wafer drying device | |
| CN108321104B (en) | Etching device with pipeline structure | |
| US11986869B2 (en) | Method of cleaning, support, and cleaning apparatus | |
| CN219998160U (en) | Wet cleaning equipment | |
| JP2007266554A (en) | Device and method for substrate processing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |