CN110463349A - The manufacturing method of organic electroluminescent device electrode, organic electroluminescent device, organic electroluminescence display device and method of manufacturing same and organic electroluminescent device electrode - Google Patents
The manufacturing method of organic electroluminescent device electrode, organic electroluminescent device, organic electroluminescence display device and method of manufacturing same and organic electroluminescent device electrode Download PDFInfo
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- CN110463349A CN110463349A CN201880020886.2A CN201880020886A CN110463349A CN 110463349 A CN110463349 A CN 110463349A CN 201880020886 A CN201880020886 A CN 201880020886A CN 110463349 A CN110463349 A CN 110463349A
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- organic electroluminescent
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- electroluminescent device
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 238000005401 electroluminescence Methods 0.000 title claims description 4
- 238000002310 reflectometry Methods 0.000 claims abstract description 57
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 30
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 13
- 239000000956 alloy Substances 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 53
- 239000000758 substrate Substances 0.000 claims description 32
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 30
- 230000008569 process Effects 0.000 claims description 27
- 238000005530 etching Methods 0.000 claims description 22
- 238000003475 lamination Methods 0.000 claims description 21
- 239000011159 matrix material Substances 0.000 claims description 19
- 229910052725 zinc Inorganic materials 0.000 claims description 18
- 229910052782 aluminium Inorganic materials 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 13
- 229910052750 molybdenum Inorganic materials 0.000 claims description 13
- 150000004767 nitrides Chemical class 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 229910052733 gallium Inorganic materials 0.000 claims description 9
- 230000010287 polarization Effects 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 56
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 54
- 239000000463 material Substances 0.000 description 32
- 239000011787 zinc oxide Substances 0.000 description 27
- 238000004544 sputter deposition Methods 0.000 description 23
- 239000011701 zinc Substances 0.000 description 20
- 230000000052 comparative effect Effects 0.000 description 16
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 15
- 239000000243 solution Substances 0.000 description 12
- 230000005540 biological transmission Effects 0.000 description 10
- 238000005259 measurement Methods 0.000 description 10
- 239000010949 copper Substances 0.000 description 9
- 230000027756 respiratory electron transport chain Effects 0.000 description 9
- 238000012360 testing method Methods 0.000 description 8
- 230000007423 decrease Effects 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 229910052758 niobium Inorganic materials 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 229910003437 indium oxide Inorganic materials 0.000 description 5
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910001257 Nb alloy Inorganic materials 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000003760 hair shine Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910016570 AlCu Inorganic materials 0.000 description 2
- 229910000789 Aluminium-silicon alloy Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- 230000008033 biological extinction Effects 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910000423 chromium oxide Inorganic materials 0.000 description 2
- 150000004696 coordination complex Chemical class 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- -1 for example Inorganic materials 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 238000010422 painting Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000001420 photoelectron spectroscopy Methods 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920000767 polyaniline Polymers 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- FGIUAXJPYTZDNR-UHFFFAOYSA-N potassium nitrate Chemical compound [K+].[O-][N+]([O-])=O FGIUAXJPYTZDNR-UHFFFAOYSA-N 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- VFBJMPNFKOMEEW-UHFFFAOYSA-N 2,3-diphenylbut-2-enedinitrile Chemical group C=1C=CC=CC=1C(C#N)=C(C#N)C1=CC=CC=C1 VFBJMPNFKOMEEW-UHFFFAOYSA-N 0.000 description 1
- DDTHMESPCBONDT-UHFFFAOYSA-N 4-(4-oxocyclohexa-2,5-dien-1-ylidene)cyclohexa-2,5-dien-1-one Chemical compound C1=CC(=O)C=CC1=C1C=CC(=O)C=C1 DDTHMESPCBONDT-UHFFFAOYSA-N 0.000 description 1
- HNRGOVGFMBHMNW-UHFFFAOYSA-N 9,10-dioxoanthracene-1-carbonitrile Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3C(=O)C2=C1C#N HNRGOVGFMBHMNW-UHFFFAOYSA-N 0.000 description 1
- RJQNKLDTJKNTJA-UHFFFAOYSA-N C.C.C1(C(C=CC2=CC3=CC=CC=C3C=C12)=O)=O Chemical compound C.C.C1(C(C=CC2=CC3=CC=CC=C3C=C12)=O)=O RJQNKLDTJKNTJA-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010011224 Cough Diseases 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Divinylene sulfide Natural products C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- 229920000292 Polyquinoline Polymers 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- 238000005280 amorphization Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 150000004054 benzoquinones Chemical class 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- UPGUYPUREGXCCQ-UHFFFAOYSA-N cerium(3+) indium(3+) oxygen(2-) Chemical compound [O--].[O--].[O--].[In+3].[Ce+3] UPGUYPUREGXCCQ-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 150000008376 fluorenones Chemical class 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical class C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920005596 polymer binder Polymers 0.000 description 1
- 239000002491 polymer binding agent Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 150000003219 pyrazolines Chemical class 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000009153 reflex inhibition Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 229930192474 thiophene Natural products 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XZLXGTUBUCMRCH-UHFFFAOYSA-N tungsten zinc Chemical compound [Zn].[W] XZLXGTUBUCMRCH-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
- H05B33/24—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers of metallic reflective layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
- H05B33/28—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode of translucent electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The present invention provides: the organic EL element electrode for any one of inhibiting external reflection by reducing the reflectivity of visible light region and capable of arbitrarily adjusting work function, the anode that can be used for organic EL element, cathode；And the manufacturing method of organic EL element electrode.It is solved by organic EL element with electrode (20), the organic EL element includes with electrode (20): being 40% blackening layer (2) below and the work function adjustment layer (3) being made of transparent conductive oxide for being arranged on the blackening layer and having defined work function with the reflectivity of metal or alloy conductive layer as main component (1), the visible light region being arranged on the conductive layer, the reflectivity of the visible light region of organic electroluminescent device electrode is 10% hereinafter, sheet resistance is 1 Ω/sq or less.
Description
Technical field
The present invention relates to organic electroluminescent device electrode, organic electroluminescent device, ORGANIC ELECTROLUMINESCENCE DISPLAYS dresses
Set the manufacturing method with organic electroluminescent device electrode.
Background technique
In recent years, organic electroluminescent device (hereinafter referred to as organic EL element) is used in various fields, especially quilt
Display device, luminaire of display, slim TV machines for smart phone etc. etc. are on the way.
For having used the organic EL panel of the display device of organic EL element, lighting device can be according to the extraction direction of light
Difference and be roughly divided into top emission type and bottom emission type both.
In top emission type, TFT (Thin Film Transistor, thin film transistor (TFT)) layer, In are formed on substrate
It is laminated with each layer such as electrode and organic EL layer thereon.Top emission type be from the opposite side of substrate, i.e. with TFT circuit opposite side
Extract the type of light.On the other hand, bottom emission type is the type from the extracted region light other than substrate-side, i.e. TFT circuit.
The organic EL element of top emission type is compared with the organic EL element of bottom emission type, not by shadings such as TFT, wirings
The restriction of object, it can be ensured that high aperture opening ratio, therefore it is suitable for high brightness and fine definition.
In the organic EL panel of top emission type, it is previous need that circularly polarizing plate is arranged in panel surface prevent TFT and
The external light reflection of organic EL element electrode, due to that by several circular polarization film overlappings therefore must be difficult to make flexible organic EL
Panel.
Omit the external light reflection that circularly polarizing plate then needs to prevent TFT and organic EL element.Black matrix" can be passed through
Prevent the external light reflection from tft array, but for the anode of organic EL element, need the reflectivity of electrode it is low,
Material that is conductive and needing work function big.In addition, then being needed in the case where using reflecting electrode side as cathode
Want the material that work function is small.
Patent document 1 be related to without using circular polarization film and prevent EL light emitting device mirror-polishing technology, record:
It is provided with the EL light-emitting component of the anode or cathode and photomask that are made of oxide conductive film.
Patent document 2 is related to having used the organic EL display element of molybdenum or chromium oxide in anti-reflection layer, records: for
The external light reflection for preventing metal electrode, uses molybdenum or the chromium oxide as anti-reflection layer.
Patent document 3 is related to the organic luminescent device being inhibited from the case where reflecting ambient light of cathode, records:
The n-type semiconductors such as zinc oxide, six calcium borides are used as reflex inhibition layer.
Patent document 4 is related to constituting the EL colour film of EL display device, records: the counnter attack as EL colour film
The material for penetrating layer uses the oxide of the light absorption such as molybdenum oxide.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2002-033185 bulletin
Patent document 2: Japanese Unexamined Patent Publication 2004-303481 bulletin
Patent document 3: Japanese Unexamined Patent Publication 2001-332391 bulletin
Patent document 4: Japanese Unexamined Patent Publication 2003-017263 bulletin
Summary of the invention
Subject to be solved by the invention
For patent document 1 to 4, in organic EL element, in order to prevent external reflection and photomask, antireflection are set
Layer, but and be not implemented visible light region reflectivity it is low, there is good electric conductivity and the adjustable electrode of work function is constituted.
In addition, not yet realizing that the reflectivity of visible light region is low, have good electric conductivity and work function is adjustable, energy
Enough electrodes etched together are constituted.
The present invention is completed in view of the above subject, the object of the present invention is to provide: by reducing visible light region
Reflectivity come inhibit external reflection and can arbitrarily adjust work function, can be suitable for organic EL element anode, cathode
Any one of organic EL element electrode；And the manufacturing method of organic EL element electrode.
Other objects of the present invention are, provide: the reflectivity of visible light region is low, has good electric conductivity and work content
The organic EL element electrode that number is adjustable, can etch together；And the manufacturing method of organic EL element electrode.
Solution for solving the problem
The above subject can organic electroluminescent device through the invention solved with electrode, organic electroluminescent of the invention
Element includes with electrode: with metal or alloy conductive layer as main component, the visible light region that is arranged on the conductive layer
Reflectivity be 40% blackening layer below and be arranged on the blackening layer and with defined work function by transparent conductive oxide
The work function adjustment layer that object is constituted, the reflectivity of the visible light region of the organic electroluminescent device electrode be 10% with
Under, sheet resistance is 1 Ω/sq or less.
According to the above configuration, it is equipped with blackening layer and work function adjustment layer on the electrically conductive, therefore can provide and pass through reduction
The reflectivity of visible light region and inhibit external reflection and sheet resistance value is small, can arbitrarily adjust the organic of work function
EL element electrode.Thus, it is possible to form the flexible organic EL panel of unbiased vibration plate.
Constituted at this point, above-mentioned organic electroluminescent device electricity consumption is highly preferred by 3 layers, described three layers include above-mentioned conductive layer,
Above-mentioned blackening layer and above-mentioned work function adjustment layer.
Have the reflectivity with low visible light region and sufficient electric conductivity as a result, can be used as anode
It can be used as the advantages of cathode uses, and due to being made of 3 layers of the less number of plies, the easy manufacture for carrying out electrode,
And electrode can be thinned.
At this point, above-mentioned conductive layer is preferably to be with the metal selected from one or more of the group comprising Al, Cu, Ag, Mo, Cr
The metal or alloy of main component.
It, can be by the simple technique such as sputtering method come laminated conductive layer, Ke Yishi by using these metal or alloy
Existing low sheet resistance.
At this point, above-mentioned blackening layer is preferably by with Mo or Zn lower oxyde as main component, rudimentary nitride or rudimentary
Oxynitride is constituted.
It, can be with as a result, by using the substance of the electric conductivity in visible light region with high absorbance as blackening layer
Realize low visible light region reflectivity and good electric conductivity.
At this point, above-mentioned work function adjustment layer is by with In2O3Or ZnO is the transparent conductive oxide composition of matrix, preferably
It is, by In2O3In added with the transparent conductive oxide selected from one or more of group comprising Ga, Ce, Zn, Sn, Si, W, Ti
Object is constituted, alternatively, by being added with the transparent conductive oxide structure selected from one or more of group comprising Al or Ga in ZnO
At.
As a result, by using can adulterate various metals and work function can be adjusted according to the additive amount of dopant
Transparent conductive oxide makes so as to provide to can be used as anode use and can also be used as cathode as work function adjustment layer
With and visible light region the low electrode of reflectivity.
At this time, it is preferred that the work function of above-mentioned work function adjustment layer is 4.6eV hereinafter, above-mentioned organic electroluminescent is first
Part is used with the cathode that electrode can be used as organic electroluminescent device or the work function of above-mentioned work function adjustment layer is 4.7eV
More than, above-mentioned organic electroluminescent device is used with the anode that electrode can be used as organic electroluminescent device.
The work function of work function adjustment layer corresponds to the doping being added in the transparent conductive oxide as matrix as a result,
Type and the additive amount of agent and be adjusted, therefore can be used as the anode of organic EL element and can be used as cathode and use.
The above subject can by have the organic electroluminescent device of organic electroluminescent device electrode of the invention,
And has above-mentioned organic electroluminescent device and do not have the organic electroluminescence display device and method of manufacturing same solution of polarization plates.
The reflectivity of the visible light region of organic electroluminescent device electrode of the invention reduces as a result, therefore is making
It can inhibit external reflection in the case where electrode use for organic EL element and organic EL display device, no polarization can be provided
The organic EL display device of plate.
The above subject can the manufacturing method of organic electroluminescent device electrode through the invention solve, it is described organic
The manufacturing method of electroluminescent cell electrode carries out following processes: conductive layer lamination process, is laminated on substrate selected from packet
The metal of one or more of group containing Al, Cu, Ag, Mo, Cr conductive layer as main component；Blackening layer lamination process, upper
State on conductive layer stacking by being constituted with Mo or Zn lower oxyde as main component, rudimentary nitride or rudimentary oxynitride,
And the reflectivity of visible light region is 40% blackening layer below；Work function adjustment layer lamination process, on above-mentioned blackening layer upper layer
It folds by with In2O3Or ZnO is the transparent conductive oxide composition of matrix and the work function adjustment layer with defined work function；With
And etching work procedure, the above-mentioned conductive layer being laminated, above-mentioned blackening layer and above-mentioned work function adjustment layer are etched together.
As a result, due to form conductive layer, blackening layer and work function adjustment layer with suitable material thus can be by using
The wet etching of phosphorus nitre acetic acid system etching solution (phosphoric acid, nitric acid, acetic acid mixture) etches together, therefore is easy to carry out the system of electrode
It makes.
In addition, can be provided visible by reducing due to being equipped with blackening layer and work function adjustment layer on the electrically conductive
The reflectivity in light region and inhibit external reflection and sheet resistance is small, can arbitrarily adjust the organic EL element of work function
Use electrode.
The above subject can electronic equipment through the invention solved with electrode, the electronic equipment includes with electrode: with
Metal or alloy conductive layer as main component, the reflectivity for the visible light region being arranged on the conductive layer are below for 40%
Blackening layer and the work function being made of transparent conductive oxide being arranged on the blackening layer and with defined work function adjust
Layer, the reflectivity of the visible light region of electronic equipment electrode is 10% hereinafter, sheet resistance is 1 Ω/sq or less
According to the above configuration, it is set as blackening layer and work function adjustment layer on the electrically conductive, therefore by reducing visible region
The reflectivity in domain and inhibit external reflection, and since sheet resistance value is small, the power consumption that can provide electronic equipment is obtained
With reduced electronic equipment electrode.
Invention effect.
About organic EL element electrode of the invention, blackening layer is high by the absorbance of conductivity height and visible light region
, formed with Mo or Zn lower oxyde as main component, rudimentary nitride or rudimentary oxynitride, therefore can keep
Reflectivity is reduced in the state of low sheet resistance value.In addition, due to using the transparent conductive oxide with suitable work function
As work function adjustment layer, therefore electrode can be used as any one of anode, cathode.In addition, by by blackening layer and function
The combination of function adjustment layer, can make the reflectivity of visible light region be reduced to 10% or less.Therefore, unbiased vibration plate can be formed
Flexible organic EL panel.
In addition, conductive layer, blackening layer, work function adjustment layer are selected from the material that can be etched together, therefore it is easy
Carry out the manufacture of electrode.
Detailed description of the invention
Fig. 1 is the constructed profile for showing the organic EL element electrode of one embodiment of the present invention.
Fig. 2 is the flow chart of the manufacturing method of the organic EL element electrode of one embodiment of the present invention.
Fig. 3 is the constructed profile for showing the organic EL element of one embodiment of the present invention.
Fig. 4 is the constructed profile for showing the organic EL element of variation of one embodiment of the present invention.
Fig. 5 A is the optical constant measurement result of the blackening layer of reference example 1 and reference example 2 of the invention, is to show refractive index
Chart.
Fig. 5 B is the optical constant measurement result of the blackening layer of reference example 1 and reference example 2 of the invention, is to show delustring system
Several charts.
Fig. 6 is the chart for showing the measuring reflectance result of the blackening layer of reference example 1 to 3 of the invention.
Fig. 7 is the chart for showing the measuring reflectance result of work function adjustment layer of reference example 4 to 8 of the invention.
Fig. 8 is the measuring reflectance result for showing the organic EL element electrode of the embodiment of the present invention 1 and comparative example 1
Chart.
Fig. 9 is the measuring reflectance knot for showing the organic EL element electrode of the embodiment of the present invention 2 to 6 and comparative example 2
The chart of fruit.
Figure 10 is the SEM cross-section photograph of sample obtained by being etched to the organic EL element of embodiment 2 with electrode.
Figure 11 is the chart for showing the measuring reflectance result of the conductive film of the embodiment of the present invention 7.
Specific embodiment
Below to the manufacturer of the organic EL element electrode of one embodiment of the present invention, the organic EL element electrode
Method, the organic EL element for having organic EL element electrode are said using the organic EL display device of the organic EL element
It is bright.
< organic EL element electrode >
The organic EL element of present embodiment electrode 20 is as shown in Figure 1, it is laminated conductive layer 1, is formed in conductive layer 1
On blackening layer 2 and the work function adjustment layer 3 that is formed on blackening layer 2 form.Below to composition organic EL element electrode 20
Each layer be described in detail.
(conductive layer)
Conductive layer 1 is selected from one or more of the group comprising Al, Cu, Ag, Mo metal as main component, Huo Zhewei
Selected from comprising APC (silver, palladium, copper alloy), the alloy in the group of AlNd, AlSi, AlCu, AlSiCu.
Here, referring to for main component: including the situation of 50 weight % or more with weight ratio meter in above-mentioned conductive layer.
As the metal for constituting conductive layer 1, as long as there is sufficient electric conductivity and can be used for the metal of organic EL element
.It can be mentioned, for example Al, Cu, Ag, Mo etc., but are not limited to these.
As the alloy for constituting conductive layer 1, as long as there is sufficient electric conductivity and can be used for the alloy of organic EL element
.It can be mentioned, for example: with the alloy as main component such as Al, Cu, Ag, Mo；Alternatively, selected from the APC (conjunction of silver, palladium, copper is included
Gold), the alloy in the group of AlNd, AlSi, AlCu, AlSiCu, but be not limited to these.
The thickness of conductive layer 1 be preferably set to 10nm or more and 1000nm hereinafter, more preferably 20nm or more and 800nm with
Under, more preferably 30nm or more and 700nm or less, further preferably 40nm or more and 600nm or less, further preferably
50nm or more and 500nm or less.When the thickness of conductive layer 1 is excessively thin, electric conductivity decline.On the other hand, when conductive layer 1 is blocked up, have
The thickness of machine EL element increases, the processability of etching, manufacturing decline.
(blackening layer)
Blackening layer 2 is by with Mo or Zn lower oxyde as main component, rudimentary nitride or rudimentary oxynitride structure
At and visible light region reflectivity be 40% layer below.
Here, referring to for main component: Mo contained in above-mentioned blackening layer or Zn is wrapped in terms of the atomicity of metallic atom ratio
Situation containing 50 atom % or more.
As lower oxyde, rudimentary nitride or the rudimentary oxynitride for constituting blackening layer 2, as long as can fully absorb
The light of visible light region has sufficient electric conductivity.It can be mentioned, for example with Mo or Zn lower oxyde as main component,
Rudimentary nitride or rudimentary oxynitride etc., but it is not limited to these.
Refer to MoO with Mo lower oxyde as main componentx(x=stoichiometric ratio, 2≤x < 3), is main with Mo
The rudimentary nitride of ingredient refers to MoNy(y=stoichiometric ratio) refers to MoO with Mo rudimentary oxynitride as main componentxNy
(x, y=stoichiometric ratio).
Refer to ZnO with Zn lower oxyde as main componentx(x=stoichiometric ratio), it is as main component low with Zn
Grade nitride refers to ZnNy(y=stoichiometric ratio) refers to ZnO with Zn rudimentary oxynitride as main componentxNy(x, y=ization
Learn metering ratio).
In blackening layer 2, metal in addition to making Mo or Zn as main component can also add dopant metal.
Dopant metal is preferably transition metal, for example, Nb, W, Al, Ni, Cu, Cr, Ti, Ag, Ga, Zn, In, Ta, but
It is without being limited thereto.
Dopant metal is relative to Mo or Zn lower oxyde as main component, rudimentary nitride or rudimentary oxynitriding
The content ratio of object is preferably 20 atom % or less.By making the content ratio of dopant metal (Nb, Ta etc.) in above range
It is interior, the light absorption of good electric conductivity and visible light region may be implemented.
The reflectivity of the visible light region of blackening layer 2 is preferably 50% or less, more preferably 40% or less.According to JIS
The definition of Z8120, the lower limit wavelength with the comparable electromagnetic wave of luminous ray is about 360~400nm, the upper limit be about 760~
830nm, in the present embodiment, it is seen that light region refers to the wavelength region of 400nm~700nm.
When the visible light transmittance of blackening layer 2 is low, reduced by the visible light that organic EL element electrode 20 reflects, Ke Yishi
Preferably for the flexible organic EL display device of unbiased vibration plate.
The thickness of blackening layer 2 is preferably set to 5nm or more and 200nm hereinafter, more preferably 10nm or more and 150nm or less,
More preferably 20nm or more and 100nm or less, further preferably 30nm or more and 75nm or less, further preferably 40nm with
Upper and 60nm or less.When the thickness of blackening layer 2 is excessively thin, it is seen that the absorption of the light in light region becomes inadequate or forms a film and becomes difficult.
On the other hand, when blackening layer 2 is blocked up, the processability of etching, manufacturing decline.
(work function adjustment layer)
Work function adjustment layer 3 is the layer being made of transparent conductive oxide with defined work function.
As constitute work function adjustment layer 3 transparent conductive oxide, as long as have sufficient electric conductivity, can be by adding
Add various metals to adjust the transparent conductive oxide of work function.As this kind of transparent conductive oxide, it can be mentioned, for example
In2O3、ZnO、Ga2O3、SnO2、TiO2, CdO and their composite oxides etc., but be not limited to these.
In present embodiment, the material as composition work function adjustment layer 3 is, it is preferable to use with In2O3Or ZnO is matrix
Transparent conductive oxide.
As with In2O3For the transparent conductive oxide of matrix, can be used in main component In2O3In added with being selected from
The transparent conductive oxide of the metallic element of one or more of group comprising Ga, Ce, Zn, Sn, Si, W, Ti.
This kind of with In2O3For in the transparent conductive oxide of matrix it is preferable to use: the IGO added with Ga (mix by gallium
Miscellaneous indium oxide), the IZO (indium zinc oxide) added with Zn, the ITO (tin indium oxide) added with Sn, added with Ce's and Sn and Ti
ICO (indium oxide cerium), the IWZO (tungsten-zinc doping indium oxide) added with W and Zn.
In addition, In2O3In the content ratio of added metallic element with weight ratio meter be preferably 50 weight % or less.When
When containing more more than the range, due to becoming high resistance without preferred.
It should be noted that with In2O3For in the transparent conductive oxide of matrix, in addition to Ga, Ce, Zn, Sn, Si, W, Ti
It in addition, can also include other elements in the range of not damaging the performance of organic EL element electrode of present embodiment.
As using ZnO as the transparent conductive oxide of matrix, can be used in main component ZnO added with selected from comprising
The transparent conductive oxide of the metallic element of one or more of the group of Al or Ga.
As it is this kind of using ZnO as the transparent conductive oxide of matrix it is preferable to use: (aluminium adulterates by AZO added with Al
Zinc oxide), the GZO (Ga-doped zinc oxide) added with Ga, the GAZO added with Al and Ga (gallium/aluminium-doped zinc oxide).
In addition, the content ratio of added metallic element with weight ratio meter is preferably 10 weight % or less in ZnO.When super
When crossing the range and containing more, due to becoming high resistance without preferred.
It, can also be other than Al or Ga it should be noted that in the transparent conductive oxide using ZnO as matrix
It does not damage in the range of the performance of the organic EL element electrode of present embodiment comprising other elements.
Using electrode 20 as cathode in use, for example, according to the work function for making work function adjustment layer 3 organic EL element
Transparent conductive oxide is selected for 4.6eV mode below.
On the other hand, using electrode 20 as anode in use, for example, according to work function adjustment layer is made organic EL element
Work function be 4.7eV or more mode select transparent conductive oxide.
In present embodiment, it is adjusted to defined work function and adding various metals in work function adjustment layer 3, respectively
The addition of kind metal causes the In as matrix2O3Or the crystalline decline of ZnO.Therefore, by the addition of metal, thus function
The crystallinity of function adjustment layer 3 reduces, and amorphization occurs, therefore is able to use defined etching solution and is etched.
The thickness of work function adjustment layer 3 is preferably set to 5nm or more and 150nm hereinafter, more preferably 10nm or more and 100nm
Below, 20nm or more and 80nm or less, further preferably 30nm or more and 60nm or less, further preferably are more preferably
40nm or more and 50nm or less.When the thickness of work function adjustment layer 3 is excessively thin, it is seen that the absorption of the light in light region becomes inadequate,
Or work function is unstable or film forming becomes difficult.On the other hand, when work function adjustment layer 3 is blocked up, processability, the system of etching
The property made decline.
(physical property of organic EL element electrode)
The organic EL element of present embodiment electrode 20, which is characterized in that by being set as above-mentioned composition, to have energy
Be enough in the low visible light region of the organic EL display device of unbiased vibration plate reflectivity and sufficient electric conductivity.
The reflectivity of the visible light region (400nm~700nm) of organic EL element electrode 20 is 10% or less.
The sheet resistance of organic EL element electrode 20 is 1 Ω/sq or less, is more preferably 0.75 Ω/sq or less, further
Preferably 0.5 Ω/sq or less, particularly preferably 0.25 Ω/sq or less.
The work function of organic EL element electrode 20 determines by the work function of work function adjustment layer 3, by organic EL element
It is 4.6eV in the case where using electrode 20 to use as cathode hereinafter, using electrode 20 to use as anode organic EL element
In the case of be 4.7eV or more.
Organic EL element is made of with electrode 20 3 layers of the less number of plies, and described 3 layers include conductive layer 1, blackening layer 2 and function
Function adjustment layer 3, organic EL element electrode 20 have an advantage that reflectivity with low visible light region and adequately
Electric conductivity by proper choice of the material for work function adjustment layer, and can either be used as the anode of organic EL element
It can be used as cathode.
Organic EL element with the thickness of electrode 20 be preferably set to 20nm or more and 1500nm hereinafter, more preferably 100nm with
Upper and 1000nm or less, more preferably 200nm or more and 800nm or less, further preferably 300nm or more and 600nm or less,
Further preferably 350nm or more and 500nm or less.When organic EL element is blocked up with electrode 20, processability, the manufacturing of etching
Decline.
The manufacturing method > of < organic EL element electrode
The organic EL element electrode 20 of the mode of this implementation is manufactured by the manufacturing method of organic EL element electrode,
As shown in Fig. 2, the manufacturing method of organic EL element electrode is characterized in that carrying out following processes: work is laminated in conductive layer
Sequence is laminated on substrate with the metal conduction as main component selected from one or more of the group comprising Al, Cu, Ag, Mo, Cr
Layer；Blackening layer lamination process, stacking is by with Mo or Zn lower oxyde as main component, rudimentary nitridation on above-mentioned conductive layer
Object or rudimentary oxynitride are constituted and the reflectivity of visible light region is 40% blackening layer below；Work function adjusts layer stackup
Process, stacking is by with In on above-mentioned blackening layer2O3Or ZnO is the transparent conductive oxide composition of matrix and has defined function
The work function adjustment layer of function；And etching work procedure, the conductive layer, above-mentioned blackening layer and above-mentioned function being laminated are etched together
Function adjustment layer.
Each process is described in detail referring to Fig. 2.
(conductive layer lamination process)
In conductive layer lamination process (step S1), stacking is in the group comprising Al, Cu, Ag, Mo, Cr on substrate 10
More than one metal conductive layer 1 as main component.The method that conductive layer 1 is formed on substrate 10 can use sputtering
The physical vapor depositions such as method, vacuum vapour deposition, ion plating method, but not limited to this.
(blackening layer lamination process)
In blackening layer lamination process (step S2), leading on substrate 10 is being layered in by above-mentioned conductive layer lamination process
In electric layer 1, stacking by being constituted with Mo or Zn lower oxyde as main component, rudimentary nitride or rudimentary oxynitride and
The reflectivity of visible light region is 40% blackening layer 2 below.The method that blackening layer 2 is formed on conductive layer 1, which can use, splashes
The physical vapor depositions such as method, vacuum vapour deposition, ion plating method are penetrated, but not limited to this.
In blackening layer lamination process, in order to obtain with Mo or Zn lower oxyde as main component, rudimentary nitride or
Rudimentary oxynitride is set as the condition for using Mo, ZnO to be 5~50sccm as target and oxygen flow.
(work function adjustment layer lamination process)
In work function adjustment layer lamination process (step S3), conductive layer is being laminated in by above-mentioned blackening layer lamination process
On 1 blackening layer 2, it is laminated by with In2O3Or ZnO is the transparent conductive oxide composition of matrix and has defined work function
Work function adjustment layer 3.On blackening layer 2 formed work function adjustment layer 3 method can use sputtering method, vacuum vapour deposition, from
The physical vapor depositions such as sub- plating method, but not limited to this.
In work function adjustment layer lamination process, in order to obtain with In2O3Or ZnO is the transparent conductive oxide of matrix, is set as
Use the condition that ITO, GZO are 5sccm as target and oxygen flow.
If by the forming method of conductive layer 1, blackening layer 2 and work function adjustment layer 3 be set as such as vacuum vapour deposition and/or
Sputtering method then consistently can continuously form organic EL element electrode 20 by dry process on substrate 10.
(etching work procedure)
In etching work procedure (step S4), to the conductive layer 1, blackening layer 2 and work function adjustment layer 3 one being layered on substrate 10
And it is etched.For example, passing through photoetching skill on the conductive layer 1, blackening layer 2 and work function adjustment layer 3 being layered on substrate 10
Art painting photoresist is successively exposed and develops for the transfer mask pattern on the resist, then passes through etching
Part in addition to it should be used as the remaining part of electrode is removed.Then, resist is removed, is obtained as organic EL element electricity consumption
The residual fraction of pole 20.
About engraving method, can use: using etching solution wet etching or reactant gas etching, reactivity from
The dry-etchings such as sub- etching, reactive ion beam etching, ion beam milling, reactive laser beam etching.
In the present embodiment, due to forming conductive layer 1, blackening layer 2 and work function adjustment layer 3 with above-mentioned material,
It can be etched together by using the wet etching of phosphorus nitre acetic acid system etching solution (phosphoric acid, nitric acid, acetic acid mixture).
< organic illuminating element >
The organic EL element for having present embodiment uses electrode 20 as organic EL of the top emission type of anode (Anode)
Element 100 is formed with substrate 10, organic EL element electrode 20, hole transmission layer 30, You Jifa as shown in figure 3, stacking gradually
Photosphere 40, electron transfer layer 50 and transparent electrode 60, the L that shines are extracted from the opposite side of substrate 10.
The reflectivity of the visible light region of the organic EL element electrode 20 of present embodiment is 10% hereinafter, exterior light is anti-
The case where penetrating is inhibited, therefore has the advantages that not needing using polarization plates.
The each component of organic EL element 100 is described in detail below.
(substrate)
As long as the substrate 10 for constituting organic EL element 100 of the invention does not change when forming electrode and organic matter layer
, can be used such as glass, plastics, polymeric membrane, silicon substrate, the substrate that is laminated these.
(hole transmission layer)
As constitute hole transmission layer 30 material, can enumerate: polyvinyl carbazole or derivatives thereof, polysilane or its spread out
Biology, side chain or main chain have polyorganosiloxane ramification, pyrazoline derivative, arylamine derivatives, the stilbene of aromatic amine derivative
Object, triphenyl diamine derivative, polyaniline or derivatives thereof, polythiophene or derivatives thereof, polyarylamine or derivatives thereof, poly- pyrrole
It coughs up or derivatives thereof, poly- (phenylenevinylenes) or derivatives thereof or poly- (2,5- thiophene Asia ethylene) or derivatives thereof etc..
The film build method of hole transmission layer 30 is not particularly limited, and in the case where low molecule hole mobile material, can arrange
Lifting the method to be formed a film by the mixed solution with high polymer binder can enumerate in the case where high-molecular hole conduction material
The method to be formed a film by solution.
As the film thickness of hole transmission layer 30, most just when different according to material, according to making driving voltage and luminous efficiency
It is selected as the mode being suitably worth, but needs to be the thickness for not generating pin hole at least.When film thickness is blocked up, organic EL member
The driving voltage of part 100 is got higher, and therefore, the film thickness of hole transmission layer 30 is such as 1nm~1 μm, preferably 2nm~500nm, more
Preferably 5nm~200nm.
(organic luminous layer)
Organic luminous layer 40 contains the organic matter (low molecular compound and high-molecular compound) for issuing fluorescence or phosphorescence.It needs
It is noted that can also include dopant material.As the formation organic luminous layer 40 that can be used in present embodiment
Material, it can be mentioned, for example pigment based material, metal complex based material, macromolecular material, but not limited to this.
In addition, doping can also be added in organic luminous layer 40 in order to improve luminous efficiency, change emission wavelength etc.
Agent.
The film build method of organic luminous layer 40 is not particularly limited, and can be used and the solution coating comprising luminescent material exists
Method, vacuum vapour deposition, transfer printing above matrix etc..
The thickness of organic luminous layer 40 is usually
(electron transfer layer)
As the material for constituting electron transfer layer 50, well known material can be used, can enumerate: oxadiazole derivatives, anthracene
Quinone bismethane or derivatives thereof, benzoquinones or derivatives thereof, naphthoquinones or derivatives thereof, anthraquinone or derivatives thereof, four cyano anthraquinone two
Methane or derivatives thereof, fluorenone derivatives, diphenyl dicyanoethylene or derivatives thereof, diphenoquinone or 8- hydroxyl quinoline
The metal complex of quinoline or derivatives thereof, poly quinoline or derivatives thereof, polyquinoxaline or derivatives thereof, polyfluorene or derivatives thereof
Deng.
The film build method of electron transfer layer 50 is not particularly limited, and in the case where low molecule electron transport material, can arrange
The method lifting the vacuum vapour deposition using powder or being formed a film by solution or molten condition, in macromolecule electron transport material
In the case of, the method by solution or molten condition film forming can be enumerated.
As the film thickness of electron transfer layer 50, most just when different according to material, according to making driving voltage and luminous efficiency
Reach the mode being suitably worth to select, but needs to be the thickness for not generating pin hole at least.When film thickness is blocked up, organic EL element
100 driving voltage is got higher, therefore the film thickness of electron transfer layer 50 is such as 1nm~1 μm, preferably 2nm~500nm, into one
Step is preferably 5nm~200nm.
(transparent electrode)
The organic EL element 100 of present embodiment penetrates transparent electrode 60 and shines, thus transparent electrode 60 need using
Transparent or semitransparent electrode.
In the organic EL element 100 of present embodiment, when using organic EL element to use electrode 20 as anode, as structure
At the material of cathode, that is, transparent electrode 60, preferably work function is small, is easy to inject electricity to electron transfer layer 50 and organic luminous layer 40
The material of son.It is, for example, possible to use conductive metal oxide, conducting organics etc..Specifically, as conductive metal
ITO, IZO of indium oxide, zinc oxide, tin oxide and the complex as them can be used in oxide, but not limited to this.Make
For conducting organics, the organic transparent conductive film such as polyaniline or derivatives thereof, polythiophene or derivatives thereof can be used, but
It is without being limited thereto.
(variation of organic illuminating element)
Fig. 3 shows the organic EL element for having present embodiment and uses electrode 20 as the top emission type of anode (Anode)
Organic EL element 100, the organic EL element electrode 20 of present embodiment be also used as cathode (Cathode) use.
As a variation of present embodiment, it is shown in FIG. 4 and uses electrode 20 ' to use as cathode organic EL element
Organic EL element 100 '.In organic EL element 100 ', stacks gradually and be formed with substrate 10, organic EL element electrode 20 ', electricity
Sub- transport layer 50, organic luminous layer 40, hole transmission layer 30 and transparent electrode 60 ', due to organic EL element use electrode 20 ' as
Cathode uses, therefore electron transfer layer 50 is different with the position of hole transmission layer 30.
Here, in the organic EL element 100 ' of modified embodiment of the present embodiment, organic EL element uses electrode 20 ' by as yin
Pole uses, and as anode, that is, transparent electrode 60 ' material is constituted, preferably work function is big, is easy to hole transmission layer 30 and organic
The material in the injection of luminescent layer 40 hole.As transparent electrode or semitransparent electrode, can be used the high metal oxide of conductivity,
The film of metal sulfide, metal.As transparent electrode, preferably indium oxide, zinc oxide, tin oxide and as the compound of them
ITO, IZO of body, but not limited to this.
(organic luminescent device)
The reflectivity of the visible light region of the organic EL element 100,100 ' of present embodiment is low, external reflection is pressed down
System, therefore the organic EL display device of without using polarization plates, unbiased vibration plate can be made.
As organic EL display device, display, the slim TV of the portable terminals such as smart phone, tablet terminal can be enumerated
Displays such as machine etc., but not limited to this.
As substrate 10, if the substrate of the soft material such as selection plastic foil, it is aobvious can be made flexible organic EL
Showing device.
In the present embodiment, mainly to organic EL element electrode of the invention, organic EL element, organic EL display dress
It sets and is illustrated with the manufacturing method of organic EL element electrode.
But above embodiment is not limited the invention for making the understandable an example of the present invention.
The present invention can without departing from its main purpose in the case of change, improvement, and in the present invention certainly also include its equivalent invention.
Embodiment
Hereinafter, the specific embodiment of organic EL element of the invention electrode is illustrated, but the present invention is not limited to
This.
The formation > of the organic EL element electrode of < A. embodiment and comparative example
(A-1. conductive layer formation process)
Under the following conditions, on substrate stacking embodiment 1 to 6, comparative example 1 and 2 conductive layer.
Sputtering equipment: the intermittent sputtering equipment of carousel-type
Target: 5 " × 25 ", thickness 6mm, aluminium (Al) 100%
Sputtering mode: DC magnetron sputtering
Exhaust apparatus: turbomolecular pump
Arrival vacuum degree: 5 × 10- 4Pa
Base material temperature: 25 DEG C (room temperature)
Sputter electric power: 6kW
The film thickness of conductive layer: 300 ± 10nm
Ar flow: 250sccm
Use substrate: glass baseplate (1.1mm is thick)
(A-2. blackening layer lamination process)
Under the following conditions, MoNbO of the stacking as blackening layer on the conductive layer of embodiment 1 and comparative example 1x(x=
Stoichiometric ratio), embodiment 2 to 6, comparative example 2 conductive layer on MoO of the stacking as blackening layerx(x=stoichiometry
Than).
Sputtering equipment: the intermittent sputtering equipment of carousel-type
Target:
(embodiment 1) 5 " × 25 ", 90 10 atom % of atom %, Nb of thickness 6mm, Mo
(comparative example 1) 5 " × 25 ", 90 10 atom % of atom %, Nb of thickness 6mm, Mo
(embodiment 2~6) 5 " × 25 ", 100 atom % of thickness 6mm, Mo
(comparative example 2) 5 " × 25 ", 100 atom % of thickness 6mm, Mo
Sputtering mode: DC magnetron sputtering
Exhaust apparatus: turbomolecular pump
Arrival vacuum degree: 5 × 10- 4Pa
Base material temperature: 25 DEG C (room temperature)
Sputter electric power: 3kW
The film thickness of blackening layer: 50 ± 5nm
Ar flow: 250sccm
Oxygen flow: 50sccm
(A-3. work function adjustment layer lamination process)
Under the following conditions, IGO (the gallium doping as work function adjustment layer is laminated on the blackening layer of embodiment 1 to 6
Indium oxide).On the other hand, work function adjustment layer is not laminated on the blackening layer of comparative example 1 and 2.
Sputtering equipment: the intermittent sputtering equipment of carousel-type
Target:
(embodiment 1) 5 " × 25 ", thickness 6mm, In2O360 weight %, Ga2O340 weight %
(embodiment 2) 5 " × 25 ", thickness 6mm, In2O360 weight %, Ga2O340 weight %
(embodiment 3) 5 " × 25 ", thickness 6mm, In2O390 weight %, Sn2O310 weight %
(embodiment 4) 5 " × 25 ", thickness 6mm, In2O390 weight %, ZnO, 10 weight %
(embodiment 5) 5 " × 25 ", thickness 6mm, In2O386.5 weight %, CeO210 weight %, SnO23.2 weight
Measure %, TiO20.3 weight %
(embodiment 6) 5 " × 25 ", thickness 6mm, In2O396.5 weight %, WO33.0 weight %, ZnO, 0.5 weight %
Sputtering mode: DC magnetron sputtering
Exhaust apparatus: turbomolecular pump
Arrival vacuum degree: 5 × 10- 4Pa
Base material temperature: 25 DEG C (room temperature)
Sputter electric power: 2kW
The film thickness of work function adjustment layer: 35 ± 5nm
Ar flow: 100sccm
Oxygen flow: 5sccm
The blackening layer of < B. reference example or the formation > of work function adjustment layer
(B-1. blackening layer lamination process)
Under the following conditions, the blackening layer of reference example 1 to 3 is laminated on substrate.
Sputtering equipment: the intermittent sputtering equipment of carousel-type
Target:
(reference example 1) 5 " × 25 ", 100 atom % of thickness 6mm, Mo
(reference example 2) 5 " × 25 ", 90 10 atom % of atom %, Nb of thickness 6mm, Mo
(reference example 3) 5 " × 25 ", 90 7 atom %, Ta3 atom % of atom %, Nb of thickness 6mm, Mo
Sputtering mode: DC magnetron sputtering
Exhaust apparatus: turbomolecular pump
Arrival vacuum degree: 5 × 10- 4Pa
Base material temperature: 25 DEG C (room temperature)
Sputter electric power: 3kW
The film thickness of blackening layer: 50 ± 5nm
Ar flow: 250sccm
Oxygen flow: 50sccm
(B-2. work function adjustment layer lamination process)
Under the following conditions, the work function adjustment layer of reference example 4 to 8 is laminated on substrate.
Sputtering equipment: the intermittent sputtering equipment of carousel-type
Target:
(reference example 4) 5 " × 25 ", thickness 6mm, In2O360 weight %, Ga2O340 weight %
(reference example 5) 5 " × 25 ", thickness 6mm, In2O390 weight %, Sn2O310 weight %
(reference example 6) 5 " × 25 ", thickness 6mm, In2O390 weight %, ZnO, 10 weight %
(reference example 7) 5 " × 25 ", thickness 6mm, In2O386.5 weight %, CeO210 weight %, SnO23.2 weight
Measure %, TiO20.3 weight %
(reference example 8) 5 " × 25 ", thickness 6mm, In2O396.5 weight %, WO33.0 weight %, ZnO, 0.5 weight %
Sputtering mode: DC magnetron sputtering
Exhaust apparatus: turbomolecular pump
Arrival vacuum degree: 5 × 10- 4Pa
Base material temperature: 25 DEG C (room temperature)
Sputter electric power: 2kW
The film thickness of work function adjustment layer: 35 ± 5nm
Ar flow: 100sccm
Oxygen flow: 5sccm
The various test > of < C.
(reference test 1: the optical constant measurement of blackening layer)
Measure the optical constant of the blackening layer of reference example 1 and reference example 2.Use spectroscopic ellipsometers (Japan's light splitting strain formula meeting
Society's system, M-220) measurement optical constant.
Show the result in Fig. 5 A and 5B.Fig. 5 A is the chart for showing refractive index, and Fig. 5 B is the chart for showing extinction coefficient.
Refractive index n and extinction coefficient k when by 550nm is shown in table 1.
[table 1]
(reference test 2: the measuring reflectance of blackening layer)
Measure the reflectivity of the blackening layer of reference example 1 to 3.Use spectrophotometer ((strain) Hitachi High-
Technologies system, U-4100), reflectivity is measured in the wavelength region of 350nm to 800nm.
Show the result in Fig. 6.
The reflectivity of the blackening layer of reference example 1 to 3 is about 25% or more and 40% hereinafter, knowing that blackening layer is only being laminated
In the case of the reflectivity of visible light region cannot be made to be down to 10% or less.
(reference test 3: the measuring reflectance of work function adjustment layer)
Measure the reflectivity of the work function adjustment layer of reference example 4 to 8.Use spectrophotometer ((strain) Hitachi High-
Technologies system, U-4100), reflectivity is measured in the wavelength region of 350nm to 800nm.
Show the result in Fig. 7.
The reflectivity of the work function adjustment layer of reference example 4 to 8 is greater than 10%, it is known that in the feelings that work function adjustment layer is only laminated
The reflectivity of visible light region cannot be made to be down to 10% or less under condition.
(reference test 4: the work function measurement of work function adjustment layer)
Measure the work function of the work function adjustment layer of reference example 4 to 8.
Work function is calculated using photoelectron spectroscopy device in atmosphere (reason grinds gauge (strain) system, implementor name AC-2).
Show the result in table 2 below.
[table 2]
(test 1: the measuring reflectance of organic EL element electrode)
Measure the reflectivity of the electrode of embodiment (embodiment 1 to 6) and comparative example (comparative example 1, comparative example 2).Using point
Light photometer ((strain) Hitachi High-Technologies system, U-4100), it is anti-in the wavelength region measurement of 350nm to 800nm
Penetrate rate.
Show the result in Fig. 8 and Fig. 9.
In Fig. 8, the reflectivity for the comparative example 1 being shown in broken lines is 10% or more.On the other hand, the implementation being shown by a solid line
The reflectivity maximum of example 1 is only 7.4% (535nm), shows 10% or less in the entire visible light region of 400nm~700nm
Low value.
In Fig. 9, the reflectivity for the comparative example 2 being dotted line shows is 10% or more.On the other hand, the reflection of embodiment 2 to 6
Rate shows 10% low value below in the entire visible light region of 400nm~700nm.
As knowen from these results, in the case where blackening layer only being laminated on the electrically conductive, the reflection of visible light region cannot be made
Rate is down to 10% hereinafter, by being set as that visible region can be made comprising conductive layer, blackening layer, 3 layers of work function adjustment layer composition
The reflectivity in domain reaches 10% or less.
(test 2: the sheet resistance of organic EL element electrode and the measurement of work function)
It is measured in fact with resistrivity meter ((strain) Mitsubishi Chemical Analytech system, implementor name MCP-T610) by four-terminal method
Apply the sheet resistance of the electrode of example 1 and comparative example 1.
In addition, calculating embodiment 1 using photoelectron spectroscopy device in atmosphere (reason grinds gauge (strain) system, implementor name AC-2)
To the work function of the electrode of 6, comparative example 1 and 2.
Show the result in table 3 below.
[table 3]
As known from the above, the value of the sheet resistance of the electrode of embodiment 1 shows this sufficiently small value of 0.11 Ω/sq,
It can be used as organic EL element with electrode.In addition, the electrode of embodiment 1 shows and does not have the ratio of work function adjustment layer
Compared with the identical value of value of the sheet resistance of example 1, it is known that work function adjustment layer does not influence sheet resistance value and can make visible region
The reflectivity in domain is 10% or less.
Furthermore, it is possible to according to the type for the dopant being added in the transparent conductive oxide as matrix, by work function
The work function of adjustment layer is set as arbitrarily being worth, therefore, it is known that can either use as the anode of organic EL element can be used as
Cathode uses.
(test 3: etching evaluation)
Evaluation is etched to the electrode of embodiment 2.
Painting photoresist (Tokyo should change OFPR-800LB processed) on the conductive film of embodiment 2, use is patterned
Reticle, irradiation ultraviolet light so that leave pattern on the photoresist.Use developer solution (TMAH (tetramethylammonium hydroxide)
Aqueous solution) uncured photoresist is removed, make the pattern development of master, (phosphoric acid, nitric acid, acetic acid mix using etching solution
Liquid) to the conductive film for eliminating photoresist should not part be etched, to remove.Then, conduction will be remained in
Photoresist removing, washing on film, obtain the etched sample of embodiment 2.
Then, SEM cross-section analysis (Hitachi High-Tech Fielding S- is carried out to the etched sample of embodiment 2
4300)。
The SEM cross-section photograph of the etched sample of embodiment 2 is shown in Figure 10.As shown in Figure 10, it observes as clear side
The etching face on boundary, it is known that carried out good etching.
(embodiment 7:Al-Nd/ nitrogenizes Mo-Nb/IGO conductive film)
On the glass substrate, the nitridation of Al-Nd alloy-layer (film thickness 330nm), Mo-Nb alloy are made according to the following steps
Layer (film thickness 40nm), IGO layers (film thickness 30nm), the conductive film as embodiment 7.
Pass through DC magnetron sputtering method, the Al-Nd alloy-layer for the film thickness 330nm that forms a film out on the glass substrate.
Then, target, film thickness, sputtering electric power and importing gas are changed as described below, on Al-Nd alloy-layer
Form a film out Mo-Nb alloy nitride layer.
● target: thickness 9mm, Mo-Nb target
● sputtering electric power: 1.5W/cm2
● film thickness: 40nm
● Ar flow: 500sccm
●N2Flow: 88sccm
Then, target, film thickness, sputtering electric power and importing gas are changed as described below, in the nitrogen of Mo-Nb alloy
Change and forms a film out IGO layers on layer.
● target: 5 " × 62 " target of IGO 6t
● sputtering electric power: 2.5W/cm2
● film thickness: 30nm
● Ar flow: 500sccm
●O2Flow: 12sccm
By operating above, the conductive film of embodiment 7 is obtained.
The characteristic of 〇 conductive film
The characteristic of the conductive film for the embodiment 7 that measurement as above forms a film out.
● the resistance value and reflectivity of the conductive film of embodiment 7
For the conductive film of embodiment 7, wavelength 400nm is measured using spectrophotometer (Hitachi's system, U-4100)
To the reflectivity of the visible light region of 700nm.In addition, measuring resistance using resistrivity meter (Mitsubishi Chemical Loresta GP)
Value measures reflectivity using film thickness gauge (ULVAC system, DEKTAKXT).The measurement result of reflectivity is shown in Figure 11, by resistance value
Table 4 is shown in the measurement result of film thickness.
[table 4]
In Figure 10, the entire visible light of the reflectivity of the conductive film for the embodiment 7 being shown by a solid line in 400nm~700nm
Region shows 10% low value below.
In addition we know, the value of the sheet resistance of the conductive film of embodiment 7 is shown as the sufficiently small value of 0.16 Ω/sq, energy
Enough used as conductive film.
More than, as the specific embodiment of electrode of the invention, it is illustrated with organic EL element electricity consumption extremely example, but
It is that electrode of the invention is low resistance, in visible light region has 10% or so antiradar reflectivity below, therefore its purposes is unlimited
In organic EL element electrode, additionally it is possible to be used as the electrode of electronic equipment and the electrode of optical device.
As this class of electronic devices, the example of the capacitive input device of touch panel can be enumerated.Here, touch surface
Plate refers to the touch sensor integrated display apparatus for being integrally provided with touch sensor and display device.As touch panel,
There are following types: in the touch surface that the visuognosis side of the display devices such as liquid-crystal apparatus is bonded touch sensor substrate and makes
Plate, the touch sensor substrate is using the pattern formed on the transparent substrate with transparent conductive film as detecting electrode；It is filled in display
Touch sensor electrode pattern is formed on the substrate set and the touch panel of touch sensor integrated display apparatus is made.
For this kind of touch panel etc., in the electronic equipment of the electroded substrate of former configuration of display element, it there is no harm in
The visibility for hindering display is a necessary condition, therefore it is required that the masking of electrode, scattering, diffusion, reflection etc. are few as far as possible.
Electrode according to the present invention, it is seen that the reflectivity in light region is 10% hereinafter, therefore for capacitive touch
When the electrode of panel type input unit, it can also inhibit dazzle, the contrast decline of display is inhibited, and sheet resistance is small
To 1 Ω/sq hereinafter, therefore can reduce the power consumption of the electronic equipments such as capacitance-type input unit.
Symbol description
1 conductive layer
2 blackening layers
3 work function adjustment layer
10 substrates
20,20 ' organic EL element electrode
30 hole transmission layers
40 organic luminous layers
50 electron transfer layers
60,60 ' transparent electrode
100,100 ' organic EL element
L shines
Claims (13)
1. a kind of organic electroluminescent device electrode, characterized by comprising:
With metal or alloy conductive layer as main component,
Be arranged in the visible light region on the conductive layer reflectivity be 40% blackening layer below and
It is arranged on the blackening layer and has the work function adjustment layer of defined work function being made of transparent conductive oxide,
The reflectivity of the visible light region of the organic electroluminescent device electrode be 10% hereinafter,
Sheet resistance is 1 Ω/sq or less.
2. organic electroluminescent device electrode according to claim 1, which is characterized in that the organic electroluminescent member
Part electrode is constituted by 3 layers, and described 3 layers include the conductive layer, the blackening layer and the work function adjustment layer.
3. organic electroluminescent device electrode according to claim 1 or 2, which is characterized in that the conductive layer be with
Metal metal or alloy as main component selected from one or more of the group comprising Al, Cu, Ag, Mo, Cr.
4. organic electroluminescent device electrode according to any one of claim 1 to 3, which is characterized in that described black
Change layer by being constituted with Mo or Zn lower oxyde as main component, rudimentary nitride or rudimentary oxynitride.
5. organic electroluminescent device electrode according to any one of claim 1 to 4, which is characterized in that the function
Function adjustment layer is by with In2O3Or ZnO is the transparent conductive oxide composition of matrix.
6. organic electroluminescent device electrode according to claim 5, which is characterized in that the work function adjustment layer by
In In2O3In added with the transparent conductive oxide structure selected from one or more of group comprising Ga, Ce, Zn, Sn, Si, W, Ti
At.
7. organic electroluminescent device electrode according to claim 5, which is characterized in that the work function adjustment layer by
It is constituted in ZnO added with the transparent conductive oxide selected from one or more of the group comprising Al or Ga.
8. organic electroluminescent device electrode according to any one of claim 1 to 7, which is characterized in that the function
The work function of function adjustment layer is 4.6eV hereinafter, the organic electroluminescent device uses electrode as organic electroluminescent device
Cathode use.
9. organic electroluminescent device electrode according to any one of claim 1 to 7, which is characterized in that the function
The work function of function adjustment layer is 4.7eV or more, and the organic electroluminescent device uses electrode as organic electroluminescent device
Anode use.
10. a kind of organic electroluminescent device has organic electroluminescent device described in any one of claims 1 to 9
Use electrode.
11. a kind of organic electroluminescence display device and method of manufacturing same has organic electroluminescent device described in any one of claim 10, and does not have
Standby polarization plates.
12. a kind of manufacturing method of organic electroluminescent device electrode, which is characterized in that it carries out following processes:
Conductive layer lamination process is laminated on substrate with the metal selected from one or more of the group comprising Al, Cu, Ag, Mo, Cr
Conductive layer as main component；
Blackening layer lamination process, stacking is by with Mo or Zn lower oxyde as main component, rudimentary nitrogen on the conductive layer
Compound or rudimentary oxynitride are constituted and the reflectivity of visible light region is 40% blackening layer below；
Work function adjustment layer lamination process, stacking is by with In on the blackening layer2O3Or ZnO is the transparent conductive oxide of matrix
Object constitutes and the work function adjustment layer with defined work function；And
Etching work procedure etches the conductive layer being laminated, the blackening layer and the work function adjustment layer together.
13. a kind of electronic equipment electrode, which is characterized in that it includes:
With metal or alloy conductive layer as main component,
Be arranged in the visible light region on the conductive layer reflectivity be 40% blackening layer below and
It is arranged on the blackening layer and has the work function adjustment layer of defined work function being made of transparent conductive oxide,
The reflectivity of the visible light region of the electronic equipment electrode be 10% hereinafter,
Sheet resistance is 1 Ω/sq or less.
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| JP2017-065598 | 2017-03-29 | ||
| JP2017065598A JP6975543B2 (en) | 2017-03-29 | 2017-03-29 | A method for manufacturing an electrode for an organic electroluminescence element, an organic electroluminescence element, an organic electroluminescence display device, and an electrode for an organic electroluminescence element. |
| PCT/JP2018/012968 WO2018181573A1 (en) | 2017-03-29 | 2018-03-28 | Electrode for organic electroluminescence element, organic electroluminescence element, organic electroluminescence display device, and method for manufacturing electrode for organic electroluminescence element |
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| JP (1) | JP6975543B2 (en) |
| KR (1) | KR102489364B1 (en) |
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|---|---|---|---|---|
| CN111244114A (en) * | 2020-02-10 | 2020-06-05 | Tcl华星光电技术有限公司 | Display panel |
| WO2021189473A1 (en) * | 2020-03-27 | 2021-09-30 | 京东方科技集团股份有限公司 | Display panel, method for manufacturing same and electronic device |
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| JP7326918B2 (en) * | 2018-09-03 | 2023-08-16 | 大同特殊鋼株式会社 | laminate |
| CN109917968A (en) * | 2019-03-28 | 2019-06-21 | 京东方科技集团股份有限公司 | A kind of conductive structure, touch-control structure and touch control display apparatus |
| WO2020202284A1 (en) * | 2019-03-29 | 2020-10-08 | シャープ株式会社 | Display device |
| KR20210018641A (en) | 2019-08-07 | 2021-02-18 | 삼성디스플레이 주식회사 | Conductive pattern, display device including conductive pattern, and method of manufacturing conductive pattern |
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| CN110463349B (en) | 2022-05-27 |
| TW201841403A (en) | 2018-11-16 |
| KR20190132378A (en) | 2019-11-27 |
| JP2018170126A (en) | 2018-11-01 |
| JP6975543B2 (en) | 2021-12-01 |
| WO2018181573A1 (en) | 2018-10-04 |
| TWI759443B (en) | 2022-04-01 |
| KR102489364B1 (en) | 2023-01-16 |
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