CN110467150A - A kind of micro-nano structure direct-write methods based on spinnability material - Google Patents
A kind of micro-nano structure direct-write methods based on spinnability material Download PDFInfo
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- CN110467150A CN110467150A CN201910023044.9A CN201910023044A CN110467150A CN 110467150 A CN110467150 A CN 110467150A CN 201910023044 A CN201910023044 A CN 201910023044A CN 110467150 A CN110467150 A CN 110467150A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
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Abstract
The invention proposes a kind of micro-nano structure direct-write methods based on spinnability material, the micro-nano solid-state strand made including the use of spinnability material by spining technology；Substrate heating is reached or approached the fusing point of micro-nano solid-state strand by the first step；Micro-nano solid-state strand is moved to substrate surface under the control of mobile device, the tip of micro-nano solid-state strand is made to melt in a heated state and be adhered to substrate surface by second step；Third step, the slightly upper lift wire drawing under the control of mobile device of micro-nano solid-state strand form micro-nano solid-state strand melt and according to the mobile micro-nano solid-state strands of write-through path, and mobile device drives micro-nano solid-state strand to leave substrate surface after the completion of direct write；4th step is closed heating device, is cooled to room temperature.The direct writing means that the present invention uses is melt and are adhered to substrate in heating substrate using micro-nano strand, and micro-nano strand then being made by spining technology using spinnability material.
Description
Technical field
The present invention relates to technical field of micro-nano manufacture, and in particular to a kind of micro-nano structure direct write side based on spinnability material
Method.
Background technique
Micro-nano structure or pattern with specific function have been increasingly becoming the important set of micro-nano device or MEMS
At one of part.Currently, transfer technique and direct writing technology are two kinds of main methods for making micro-nano structure or pattern.Wherein, turn
Print technical matters it is more complex, need to manufacture seal in advance, thus be difficult to efficiently, flexibly manufacture pattern need to change frequent occurrence
Micro-nano structure.Therefore, researcher has invented simple process, accurate positioning, more flexible direct writing technology.Currently, direct write
Technology mainly includes that micro-spray technology, nanometer dip in pen technology (Dip-pen nanolithography, DPN) and nanometer pen direct write
Technology (Foundtain pen nanolithography, FPN).
Micro-spray technology refers to by piezoelectricity, thermal, the isokinetic driving of electric field, by liquid functional material or material containing function
The solution of material is ejected into substrate surface from spray orifice and forms micro-nano structure.Currently, common piezoelectricity and thermal decline and spray direct write
Liquid-drop diameter is generally 10 ~ 20 μm or so, it is difficult to realize the high-precision micro-nano structure of direct write or pattern.And there is system in electroblowing process
Make the problems such as the micron even difficulty of the micro-nozzle of submicron-scale block greatly, easily, driving pressure is big.
It is a kind of more typical micro-nano direct write side that nanometer, which dips in pen technology (Dip-pen nanolithography, DPN),
Method, principle dip functional material using atomic force microscope (AFM) probe, when the tip of probe and substrate surface are contacted
Liquid bridge is formed between the two, and functional material is transferred in substrate since capillary force is acted on from atomic force needle point later, passes through atom
Force microscope accurately controls needle point in the positioning and two-dimensional movement of substrate, to form nano-scale patterns.But this DPN probe
The amount for the functional material that the method for direct write dips every time is very limited, so direct write efficiency is lower.
It is aobvious that nanometer pen direct writing technology (Foundtain pen nanolithography, FPN) is also based on atomic force
Micro mirror carries out a kind of technology of direct write, but direct write probe used must have microchannel structure, utilizes probe and substrate table
Contact between face is acted on by the capillary force between needle point and substrate surface or applies electric field and complete direct write, to be formed on surface
Micro-nano pattern.In addition, probe generally can also have accumulator, the functional material for writing can be continuously provided, is compared
The duration of DPN technology, the technology direct write is more preferable, but the probe manufacturing with micro-nano channel is difficult, at high cost, and uses
Cheng Yi blocking.In addition, DPN and FPN technology all relies on expensive atomic force microscope, and controlled by atomic force microscope
The mobile stroke of needle point is also very small, therefore the efficiency for carrying out the micro-nano structure production of large area with this method is lower, together
When there is also easy to damage, needle points in AFM probe use process it is easily contaminated, service life is shorter the problems such as.
From domestic and international present Research above it is found that still there is an urgent need to a kind of more simple, sides in terms of micro-nano structure makes
Just, do not block, across micron to nanoscale, low cost direct-write methods, thus it is more convenient, at low cost be applied to micro-nano
Device, and then basis is provided for its application in industrial circles such as biologic medical, semiconductor chips.
Summary of the invention
Based on the above issues, it is an object of that present invention to provide a kind of micro-nano structure direct-write methods based on spinnability material,
Its used direct writing means is to melt and be adhered to substrate in heating substrate using micro-nano strand, and micro-nano strand then utilizes
Spinnability material is made by spining technology.
In view of the above problems, providing following technical solution: a kind of micro-nano structure direct-write methods based on spinnability material,
The micro-nano solid-state strand made including the use of spinnability material by spining technology；The first step places the substrate above heating device
On, and regulate and control heating device until the temperature of substrate surface reaches or approaches the fusing point of micro-nano solid-state strand；Second step, by micro-nano
Solid-state strand moves to substrate surface under the control of mobile device, and connects the tip of micro-nano solid-state strand with substrate surface
Touching, makes the tip of micro-nano solid-state strand melt in a heated state and be adhered to substrate surface；Third step, micro-nano solid-state strand exist
Slightly upper lift wire drawing forms micro-nano solid-state strand melt and according to the mobile micro-nano solid-state silk of write-through path under the control of mobile device
Item feeds micro-nano solid-state strand according to the loss of micro-nano solid-state strand while mobile, mobile device after the completion of direct write
Micro-nano solid-state strand is driven to leave substrate surface, up to the micro-nano solid-state strand melt for being adhered to substrate and the micro-nano not melted are solid
The separation of state strand；4th step closes heating device, is cooled to room temperature base reservoir temperature, solidifies to micro-nano solid-state strand melt, from
And complete direct write.
The present invention is further arranged to, and the heating temperature of the heating device can realize room temperature to 300 DEG C of regulation.
In above structure, heating device is electric hot plate, and commercial resistance-type warm table can be used to meet room temperature to 300oC's
Regulation, and keep temperature constant.
The present invention is further arranged to, and the mobile device has clamping head, can be operated micro-nano solid-state strand and be realized X/
The movement of Y/Z three degree of freedom.
In above structure, the micro-nano manipulator for the model MM3A that mobile device can be produced using Kleindiek company,
To realize the movement of three degree of freedom X/Y/Z, and it can realize in three dimensions the movement of nano-precision, while clamping of arranging in pairs or groups
First-class clamping head can easily just operate micro-nano solid-state strand.
The present invention is further arranged to, and the tip of the micro-nano solid-state strand and the contact area of substrate surface are micro-nano
Magnitude.
The present invention is further arranged to, the tip of the micro-nano solid-state strand after thawing by gravity, surface tension He ∕ or
Adhesion strength effect is adhered to substrate surface.
The present invention is further arranged to, the separate mode packet that the micro-nano solid-state strand melt is separated with micro-nano solid-state strand
It includes but is not limited to capillary and destroy fracture and cohesive energy destruction fracture.
The present invention is further arranged to, through cooling down and being formed by curing micro-nano after the micro-nano solid-state strand Melt molten direct write
Structure or pattern.
In above structure, micro-nano solid-state strand is solid-state at normal temperature as made of spinnability material, closes and adds
Thermal and after being cooled to room temperature, the spinnability material of molten condition can solidify, to form micro-nano structure or pattern.
The present invention is further arranged to, and further includes micro-nano observation device, and the micro-nano observation device can be selected but be not limited to
Optical microscopy, Stereo microscope or scanning electron microscope.
In above structure, observation direct write process can be facilitated.
The present invention is further arranged to, and the material of the substrate is mainly micro-nano technology base material, including but not limited to
Silicon, silica, graphite, PDMS(dimethyl silicone polymer), PI(Kapton) and metal.
The present invention is further arranged to, and the micro-nano solid-state strand passes through the spining technologies systems such as melt spinning, electrostatic spinning
Make.
Beneficial effects of the present invention: using spinnability material and by spining technology make micro-nano solid-state strand, in turn
The controllable direct write of micro-nano structure is realized in heating substrate using micro-nano solid-state strand.This method can be realized simple, conveniently, no
It blocks, the direct write across micron to nanoscale, the micro-nano structure of low cost, is it in works such as biologic medical, semiconductor chips
The application in industry field provides basis, can be applied to the bonding of compact electric apparatus component, the molding of tiny component.
Detailed description of the invention
Fig. 1 is complete machine schematic diagram of the invention.
Fig. 2 is direct write process schematic of the invention.
Fig. 3 is direct write effect diagram of the invention.
Fig. 4 is multiple micro-nano solid-state strand parallel direct-writing schematic diagrames of the invention.
Figure label meaning: 10- micro-nano solid-state strand；101- micro-nano solid-state strand melt；11- substrate；12- heating dress
It sets；20- mobile device；21- clamping head；30- micro-nano observes device.
Specific embodiment
With reference to the accompanying drawings and examples, specific embodiments of the present invention will be described in further detail.Implement below
Example is not intended to limit the scope of the invention for illustrating the present invention.
Referring to figs. 1 to Fig. 4, a kind of micro-nano structure direct-write methods based on spinnability material as shown in Figures 1 to 4, packet
Include the micro-nano solid-state strand 10 made using spinnability material by spining technology；Substrate 11 is placed on heating dress by the first step
It sets on 12, and regulates and controls heating device 12 until the temperature on 11 surface of substrate reaches or approaches the fusing point of micro-nano solid-state strand 10；The
Micro-nano solid-state strand 10 is moved under the control of mobile device 20 11 surface of substrate, and makes micro-nano solid-state strand by two steps
10 tip is contacted with 11 surface of substrate, is melted the tip of micro-nano solid-state strand 10 in a heated state and is adhered to substrate 11
Surface；Third step, it is molten that the slightly upper lift wire drawing under the control of mobile device 20 of micro-nano solid-state strand 10 forms micro-nano solid-state strand
Body 101 simultaneously moves micro-nano solid-state strand 10 according to write-through path, is lost according to micro-nano solid-state strand 10 to micro- while mobile
Solid-state strand 10 of receiving is fed, and mobile device 20 drives micro-nano solid-state strand 10 to leave 11 surface of substrate after the completion of direct write, directly
It is separated to the micro-nano solid-state strand melt 101 for being adhered to substrate 11 with the micro-nano solid-state strand 10 not melted；4th step is closed and is added
Thermal 12 is cooled to room temperature 11 temperature of substrate, solidifies to micro-nano solid-state strand melt 101, to complete direct write.
In the present embodiment, the heating temperature of the heating device 12 can realize room temperature to 300 DEG C of regulation.
In above structure, heating device 12 is electric hot plate, and commercial resistance-type warm table can be used to meet room temperature to 300oC
Regulation, and keep temperature constant.
In the present embodiment, the mobile device 20 has clamping head 21, can operate micro-nano solid-state strand 10 and realize X/Y/Z
The movement of three degree of freedom.
In above structure, mobile device 20 can be mechanical using the micro-nano of the model MM3A of Kleindiek company production
Hand to realize the movement of three degree of freedom X/Y/Z, and can realize the movement of nano-precision in three dimensions, arrange in pairs or groups simultaneously
The clamping heads such as clamping head 21 can easily just operate micro-nano solid-state strand 10.
In the present embodiment, the tip of the micro-nano solid-state strand 10 and the contact area on 11 surface of substrate are micro-nano amount
Grade.
In the present embodiment, the tip of the micro-nano solid-state strand 10 is after thawing by gravity, surface tension He ∕ or adhesion strength
Effect is adhered to 11 surface of substrate.
In the present embodiment, the micro-nano solid-state strand melt 101 separate mode isolated with micro-nano solid-state strand 10 includes
But it is not limited to capillary and destroys fracture and cohesive energy destruction fracture.
In the present embodiment, through cooling down and being formed by curing micro-nano structure after the fusing of micro-nano solid-state strand melt 101 direct write
Or pattern.
In above structure, micro-nano solid-state strand 10 is solid-state at normal temperature as made of spinnability material, is closed
Heating device and after being cooled to room temperature, the spinnability material of molten condition can solidify, to form micro-nano structure or pattern.
It further include micro-nano observation device 30 in the present embodiment, the micro-nano observation device 30 can be selected but be not limited to optics
Microscope, Stereo microscope or scanning electron microscope.
In above structure, observation direct write process can be facilitated.
In the present embodiment, the material of the substrate 11 is mainly micro-nano technology base material, including but not limited to silicon, dioxy
SiClx, graphite, PDMS(dimethyl silicone polymer), PI(Kapton) and metal.
In the present embodiment, the micro-nano solid-state strand 10 passes through the production of the spining technologies such as melt spinning, electrostatic spinning.
Beneficial effects of the present invention: using spinnability material and by spining technology make micro-nano solid-state strand 10, into
And utilize the controllable direct write of the realization micro-nano structure in heating substrate 11 of micro-nano solid-state strand 10.This method can be realized it is simple,
Facilitate, do not block, the direct write across micron to nanoscale, the micro-nano structure of low cost, being it in biologic medical, semiconductor core
The application of the industrial circles such as piece provides basis, can be applied to the bonding of compact electric apparatus component, the molding of tiny component.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, without departing from the technical principles of the invention, several improvements and modifications can also be made, above-mentioned hypothesis these
Improvement and modification also should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of micro-nano structure direct-write methods based on spinnability material, it is characterised in that: pass through including the use of spinnability material
The micro-nano solid-state strand of spining technology production；The first step places the substrate above on heating device, and regulates and controls heating device until base
The temperature of bottom surface reaches or approaches the fusing point of micro-nano solid-state strand；Second step, by micro-nano solid-state strand mobile device control
Substrate surface is moved under system, and contacts the tip of micro-nano solid-state strand with substrate surface, makes the point of micro-nano solid-state strand
Melt in a heated state and be adhered to substrate surface in end；Third step, micro-nano solid-state strand under the control of mobile device slightly
Upper lift wire drawing forms micro-nano solid-state strand melt and according to the mobile micro-nano solid-state strand of write-through path, according to micro- while mobile
Solid-state strand of receiving loss feeds micro-nano solid-state strand, and mobile device drives micro-nano solid-state strand to leave base after the completion of direct write
Bottom surface, until the micro-nano solid-state strand melt for being adhered to substrate is separated with the micro-nano solid-state strand not melted；4th step is closed
Heating device is cooled to room temperature base reservoir temperature, solidifies to micro-nano solid-state strand melt, to complete direct write.
2. a kind of micro-nano structure direct-write methods based on spinnability material according to claim 1, it is characterised in that: described
The heating temperature of heating device can realize room temperature to 300 DEG C of regulation.
3. a kind of micro-nano structure direct-write methods based on spinnability material according to claim 1, it is characterised in that: described
Mobile device has clamping head, can operate micro-nano solid-state strand and realize the movement of X/Y/Z three degree of freedom.
4. a kind of micro-nano structure direct-write methods based on spinnability material according to claim 1, it is characterised in that: described
The tip of micro-nano solid-state strand and the contact area of substrate surface are micro-nano magnitude.
5. a kind of micro-nano structure direct-write methods based on spinnability material according to claim 1, it is characterised in that: described
The tip of micro-nano solid-state strand is adhered to substrate surface by gravity, surface tension He ∕ or adhesion strength effect after thawing.
6. a kind of micro-nano structure direct-write methods based on spinnability material according to claim 1, it is characterised in that: described
The separate mode that micro-nano solid-state strand melt is separated with micro-nano solid-state strand is that capillary destroys fracture and cohesive energy destroys fracture.
7. a kind of micro-nano structure direct-write methods based on spinnability material according to claim 1, it is characterised in that: described
Through cooling down and being formed by curing micro-nano structure or pattern after micro-nano solid-state strand Melt molten direct write.
8. a kind of micro-nano structure direct-write methods based on spinnability material according to claim 1, it is characterised in that: also wrap
Micro-nano observation device is included, the micro-nano observation device is optical microscopy, Stereo microscope or scanning electron microscope.
9. a kind of micro-nano structure direct-write methods based on spinnability material according to claim 1, it is characterised in that: described
The material of substrate is mainly silicon, silica, graphite, dimethyl silicone polymer, Kapton or metal.
10. a kind of micro-nano structure direct-write methods based on spinnability material according to claim 1, it is characterised in that: institute
Micro-nano solid-state strand is stated to make by melt spinning, electrostatic spinning spining technology.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111319056A (en) * | 2020-03-02 | 2020-06-23 | 河北工业大学 | Micro-nano particle nondestructive carrying method and device based on controllable micro-scale bubbles |
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| US20060040057A1 (en) * | 2004-08-18 | 2006-02-23 | Sheehan Paul E | Thermal control of deposition in dip pen nanolithography |
| US20100119710A1 (en) * | 2008-10-20 | 2010-05-13 | Samsung Electronics Co., Ltd. | Patterning apparatus and method using dip-pen nanolithography |
| CN104261343A (en) * | 2014-09-02 | 2015-01-07 | 西安交通大学 | Low-cost micro/nano structure etching method based on electrostatic direct writing |
| WO2018085936A1 (en) * | 2016-11-10 | 2018-05-17 | Polyvalor, Limited Partnership | Piezoelectric composite, ink and ink cartridge for 3d printing, bifunctional material comprising the piezoelectric composite, manufacture and uses thereof |
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2019
- 2019-01-10 CN CN201910023044.9A patent/CN110467150A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060040057A1 (en) * | 2004-08-18 | 2006-02-23 | Sheehan Paul E | Thermal control of deposition in dip pen nanolithography |
| US20100119710A1 (en) * | 2008-10-20 | 2010-05-13 | Samsung Electronics Co., Ltd. | Patterning apparatus and method using dip-pen nanolithography |
| CN104261343A (en) * | 2014-09-02 | 2015-01-07 | 西安交通大学 | Low-cost micro/nano structure etching method based on electrostatic direct writing |
| WO2018085936A1 (en) * | 2016-11-10 | 2018-05-17 | Polyvalor, Limited Partnership | Piezoelectric composite, ink and ink cartridge for 3d printing, bifunctional material comprising the piezoelectric composite, manufacture and uses thereof |
| CA3043345A1 (en) * | 2016-11-10 | 2018-05-17 | Polyvalor, Limited Partnership | Piezoelectric composite, ink and ink cartridge for 3d printing, bifunctional material comprising the piezoelectric composite, manufacture and uses thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111319056A (en) * | 2020-03-02 | 2020-06-23 | 河北工业大学 | Micro-nano particle nondestructive carrying method and device based on controllable micro-scale bubbles |
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Application publication date: 20191119 |