CN110416352A - A kind of preparation method of glassed steel substrate film solar battery - Google Patents
A kind of preparation method of glassed steel substrate film solar battery Download PDFInfo
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- CN110416352A CN110416352A CN201810403183.XA CN201810403183A CN110416352A CN 110416352 A CN110416352 A CN 110416352A CN 201810403183 A CN201810403183 A CN 201810403183A CN 110416352 A CN110416352 A CN 110416352A
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- 229910000831 Steel Inorganic materials 0.000 title claims abstract description 73
- 239000010959 steel Substances 0.000 title claims abstract description 73
- 238000002360 preparation method Methods 0.000 title claims abstract description 36
- 239000000758 substrate Substances 0.000 title claims abstract description 26
- 210000003298 dental enamel Anatomy 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000002320 enamel (paints) Substances 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 15
- 239000011734 sodium Substances 0.000 claims description 15
- 229910052708 sodium Inorganic materials 0.000 claims description 12
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 11
- 229910052700 potassium Inorganic materials 0.000 claims description 10
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 9
- 239000011591 potassium Substances 0.000 claims description 9
- 238000005260 corrosion Methods 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 5
- 229910001209 Low-carbon steel Inorganic materials 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000010409 thin film Substances 0.000 abstract description 25
- 238000004519 manufacturing process Methods 0.000 abstract description 18
- 239000010408 film Substances 0.000 abstract description 13
- 230000008569 process Effects 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 6
- 238000013467 fragmentation Methods 0.000 abstract description 4
- 238000006062 fragmentation reaction Methods 0.000 abstract description 4
- 230000009467 reduction Effects 0.000 abstract description 4
- 230000006698 induction Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 79
- 239000002585 base Substances 0.000 description 29
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 28
- 239000011521 glass Substances 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000003513 alkali Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 241000357293 Leptobrama muelleri Species 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052701 rubidium Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical group OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004534 enameling Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000000116 mitigating effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 125000003748 selenium group Chemical group *[Se]* 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a kind of preparation methods of glassed steel substrate film solar battery, comprising: prepares enamel steel base；And absorbed layer and Window layer are sequentially prepared above the enamel steel base；Wherein, the thickness of the enamel steel base is no more than 1.5mm.In the thin-film solar cells preparation method of disclosure of the invention, using glassed steel as substrate, it can fundamentally solve the problems, such as that alkaline element when high temperature prepares CIGS absorbed layer in substrate is spread to cigs layer, reduce potential induction attenuation effect (PID)；Enamel steel base high temperature resistant can increase the absorbed layer that CIGS absorbed layer preparation temperature obtains function admirable；The rate that enamel steel base heats up and cooled down in CIGS process cavity is fast, it is possible to reduce the size of CIGS process cavity reduces the cost of equipment；And enamel steel base is in cell production process, no fragmentation risk, and production cost is saved in the loss of production process of reduction.
Description
Technical field
The present invention relates to area of solar cell, particularly a kind of preparations of glassed steel substrate film solar battery
Method.
Background technique
With the rapid development of industry, energy and environmental problem is increasingly severe, and new energy is increasingly by the weight of people
It is safe and reliable, pollution-free, resource is inexhaustible depending on, solar energy as a kind of important new energy, become the heat of various countries' research
Point.With the research of solar battery, for thin-film solar cells is compared to crystal silicon and amorphous silicon battery, battery material dosage
Few, production procedure is short, is more conducive to reduce cost, can carry out on a large scale into production now.Wherein, thin-film solar cells
In copper indium gallium selenide (CIGS) of greatest concern be direct band gap P-type semiconductor, absorption coefficient is high, with the tune of Ga content
Section, the band gap width of CIGS can continuously adjust within the scope of 1.02eV and 1.68eV, realize best with solar spectral
Match, and the advantages that stabilization of material property, dim light performance are good, high conversion efficiency allows CIGS thin film solar battery to be most hopeful
It is fabricated to the thin-film solar cells of high efficiency, low cost.Therefore, how that the production of CIGS thin film solar battery is efficiently low
The thin-film solar cells of cost is the important directions of this field.
Summary of the invention
For the technical problems in the prior art, the invention proposes a kind of glassed steel substrate film solar batteries
Preparation method, comprising: prepare enamel steel base；And absorbed layer and window are sequentially prepared above the enamel steel base
Layer；Wherein, the thickness of the enamel steel base is no more than 1.5mm.
Preparation method as described above, wherein the method for preparing enamel steel base includes: offer steel body；In the steel
Body two sides provide enamel coating.
Preparation method as described above, the offer steel body is ferritic stainless steel or mild steel, and thickness is no more than
1mm。
Preparation method as described above, the steel body is with a thickness of 0.15mm-0.6mm.
Preparation method as described above, the enamel coating are free of alkaline element.
Preparation method as described above, the enamel coating contain potassium element, are free of sodium element.
Preparation method as described above, the enamel coating contain sodium element and potassium element, and Na/K < 1.
Preparation method as described above, the enamel coating breakdown voltage are higher than 1500V.
Preparation method as described above utilizes magnetic after forming the enamel steel base before forming the absorbed layer
Control sputtering technology plates back electrode in the enamel steel base；Alkaline element is deposited between the back electrode and the absorbed layer
Layer；After forming the absorbed layer, buffer layer is prepared using chemical water bath before forming the Window layer；In the absorption
Alkaline element layer is deposited between layer and the buffer layer.
Preparation method as described above provides the edge-plated corrosion-resistant material of enamel steel base described.
Preparation method as described above provides the back side adhesive back material of enamel steel base described.
In the thin-film solar cells preparation method of disclosure of the invention, using glassed steel as substrate, there is following skill
Art effect:
(1) it can fundamentally solve what alkaline element when high temperature prepares CIGS absorbed layer in substrate was spread to cigs layer
Problem reduces potential induction attenuation effect (PID)；
(2) enamel steel base high temperature resistant can increase the absorbed layer that CIGS absorbed layer preparation temperature obtains function admirable；
(3) rate that enamel steel base heats up and cooled down in CIGS process cavity is fast, it is possible to reduce the ruler of CIGS process cavity
It is very little, reduce the cost of equipment；And enamel steel base is in cell production process, no fragmentation risk, the production process of reduction
Loss, save production cost.
Detailed description of the invention
In the following, the preferred embodiment of the present invention will be described in more detail in conjunction with attached drawing, in which:
Fig. 1 is the structure of thin-film solar cells in the prior art；
Fig. 2 is the film solar battery structure schematic diagram according to one embodiment of the invention；And
Fig. 3 is the preparation flow figure according to the thin-film solar cells of one embodiment of the invention.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art
Every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
In the following detailed description, the specific embodiment for being used to illustrate the application as the application a part may refer to
Each Figure of description.In the accompanying drawings, similar appended drawing reference describes substantially similar component in different drawings.This Shen
Each specific embodiment please has carried out description detailed enough following, so that having the general of ability domain-dependent knowledge and technology
Logical technical staff can implement the technical solution of the application.It should be appreciated that can also be using other embodiments or to the application
Embodiment carry out structure, logic or electrical property change.
Fig. 1 is the structure of thin-film solar cells in the prior art.As shown, the structure of thin-film solar cells be
Epitaxial growth back electrode, absorbed layer, buffer layer and Window layer in substrate of glass.Substrate of glass, absorbed layer and Window layer are formed
The structure of thin-film solar cells.Wherein, absorbed layer can be CIGS, the P-type material as semiconductor material PN junction.Window
Layer is can be transparent conductive film TCO, the n type material as semiconductor material PN junction.It will be appreciated by those skilled in the art that
Only exemplary illustrates possible application in the structure of thin-film solar cells above, existing other structures in this field
It can also equally apply.
As described in Figure 1, the structure of thin-film solar cells further includes alkaline element layer, be located at back electrode and absorbed layer with
And between absorbed layer and buffer layer.Wherein, alkaline element layer can be the compound of XF, and X is alkaline element, including but not limited to
It receives, potassium, rubidium or caesium etc..Increasing alkaline element layer can be improved the transfer efficiency of battery.
Substrate of glass is high light transmission, and the efficiency of battery conversion is easier to realize with good translucency.But glass
Contain a large amount of alkaline element in glass substrate, when preparing CIGS absorbed layer in subsequent high temperature CIGS processing chamber, glass base
Alkaline element in bottom is very easy to diffuse to CIGS absorbed layer.The problem of due to alkaline element, battery component it is possible that
Potential induction attenuation (PID) effect.Certainly increase by the substrate in Fig. 1 structure and between back electrode coating Si3N4, it is desirable to it can be with
The diffusion of substrate of glass alkaline element is reduced, but cannot be tackled the problem at its root.
Fig. 2 is the film solar battery structure schematic diagram according to one embodiment of the invention.Compared with Fig. 1 embodiment,
Back electrode, absorbed layer, buffer layer and the Window layer that Fig. 2 is implemented are same or similar, less repeat here.
As shown in Fig. 2, substrate of glass is substituted for enamel steel base, it is possible to reduce diffusion elements diffusion in substrate is to inhaling
Layer is received, and then influences the performance of thin-film solar cells.According to an embodiment of the present invention, enamel steel base can be without alkalinity
Element or alkaline element containing low sodium.According to an embodiment of the present invention, enamel steel base may include steel body and enamel
Coating.Wherein, steel body includes but is not limited to stainless steel, mild steel etc., and enamel coating wants densification, insulating properties excellent, concrete
Energy parameter can are as follows: (1) is free of alkaline element；(2) alkaline element can be contained, but be free of sodium containing potassium；(3) containing sodium element and potassium member
Element, but ratio Na/K < 1 of sodium element and potassium element.The selection priority level of above-mentioned enamel coating performance are as follows: performance (1) is excellent
It is better than performance (3) in performance (2).
As understood by those skilled in the art, the inversion temperature of soda-lime glass greatly limits between 540 DEG C~550 DEG C
The technological temperature of CIGS absorbed layer preparation is made.According to an embodiment of the present invention, enamel steel base can bear to be greater than 600 DEG C
High temperature, it can meet the more excellent CIGS absorbed layer of processability on the basis of high temperature.And enamel steel base does not contain alkali
Property element or the alkaline element containing low sodium.Alkali when preparing CIGS absorbed layer in high temperature CIGS processing chamber, in substrate
Property Element Potassium can hinder sodium element to be diffused into CIGS absorbed layer.
According to an embodiment of the present invention, the thermal expansion coefficient of enamel steel base can satisfy CIGS absorbed layer and back electrode
Between matched coefficients of thermal expansion, the CIGS absorbed layer of excellent performance can be prepared in the case of a high temperature.And glassed steel is rising
During mild cooling, ramp rate is faster than the ramp rate of glass, be conducive to decrement heating and temperature-fall period when
Between, it can reduce the size of CIGS processing chamber, reduce the cost of production equipment.
As understood by those skilled in the art, thin-film solar cells in the production process, largely battery system
Make cost significant portion to require to spend in substrate of glass and packaged glass.According to an embodiment of the present invention, glassed steel can
To realize roll-to-roll production, great advantage is had in price enameling steel, substrate is done using glassed steel, can significantly be dropped
The production cost of low CIGS thin film solar battery.Be conducive to the batch production of solar battery.
It as understood by those skilled in the art, is the intensity for reaching the application of thin film solar component, substrate of glass needs thickness
Some (usually 3mm or so).According to an embodiment of the present invention, the thickness of enamel steel base is no more than 1.5mm.Compare with
For substrate of glass, enamel steel base is more thin, quality is also lighter, is conducive to the overall weight for mitigating battery, can also increase
Add the application range of thin-film solar cells.And it during making battery other structures in enamel steel base and is not present
The risk of fragmentation, securely and reliably.
According to an embodiment of the present invention, enamel steel base resists in the application process of long-term thin-film solar cells
Corrosive nature is weaker.Can the edge to glassed steel carry out plating the stronger material of corrosion resistance.Including but not limited to zinc,
The materials such as tin, chromium, nickel.It is easy to operate, cost is relatively low.
According to an embodiment of the present invention, to prevent thin-film solar cells, there are leakage risks, reduction battery conversion effect
Rate.The enamel coating surface of glassed steel wants fine and close, insulation performance will get well, and be unable to hole.Other according to the present invention
Embodiment can also protect the back coating of glassed steel, can use EVA glue back veneer material.To glassed steel into
Row protection, reduces battery drain risk.
Fig. 3 is the preparation flow figure according to the thin-film solar cells of one embodiment of the invention.As shown, film is too
The manufacturing method 300 of positive energy battery includes the following steps: to provide enamel steel base in step 301.An implementation according to the present invention
Example can prepare enamel coating in the two sides of steel body, form enamel base steel since enamel steel base includes steel body and enamel coating
Bottom.According to an embodiment of the present invention, the thickness of steel body is no more than 1mm, preferably 0.15mm~0.6mm, counterenamel coating
Overall thickness be no more than 0.5mm, and insulating properties wants excellent, and breakdown voltage is higher than 1500V, and surface texture is fine and close, no hole configurations.
In step 302, back electrode is provided in enamel steel base.According to an embodiment of the present invention, magnetic control can be used
Sputtering technology carries out molybdenum layer plated film to the enamel substrate after cleaning, forms the back electrode of thin-film solar cells.According to the present invention
One embodiment, the thickness of molybdenum layer can be 200nm~500nm, and the square resistance for plating layer film is 500m Ω~1000m Ω.
In step 303, subsequent technique provides alkaline element layer on back electrode.It according to an embodiment of the present invention, can be with
It adopts vapor deposition method and prepares alkaline element layer.According to an embodiment of the present invention, alkali compounds XF.Wherein, X is represented as
Alkaline element, including but not limited to Na, K, Rb or Cs etc..
In step 304, absorbed layer is provided on alkaline element layer.It according to an embodiment of the present invention, can be using steaming altogether
Hair technology copper steam-plating, indium, gallium, selenium form CIGS absorbed layer.According to an embodiment of the present invention, the thickness of absorbed layer can be
1.8 μm~2.5 μm.According to an embodiment of the present invention, in absorbed layer the ratio of copper and triels 0.75~1 it
Between.According to an embodiment of the present invention, the ratio of the gallium element in absorbed layer and triels is between 0.25~0.5.
In step 305, subsequent technique provides alkaline element layer on absorbed layer.The alkaline element layer and above-mentioned steps 303
In alkaline element layer composition and treatment process it is identical, therefore do not repeating.According to an embodiment of the present invention, alkaline element layer
Thickness can be 5nm~20nm.According to an embodiment of the present invention, the alkaline element layer for preparing post-processing passes through alkaline member
The strong feature of plain diffusivity can form XIGS film layer in CIGS absorbed layer, so can change it is entire absorb layer surface at
Point, change the battery structure of entire absorbed layer by ion exchange.By the formation of XIGS film layer, reduce interlayer carrier
Surface recombination, the thickness requirement of buffer layer is reduced, and then reduce the production cost of battery.An implementation according to the present invention
Example can increase the open-circuit voltage of battery by alkaline element layer prepared by subsequent technique, and then the conversion of battery can be improved
Efficiency.
In step 306, buffer layer is provided on alkaline element layer, it according to an embodiment of the present invention, can be using chemistry
Immersion method prepares buffer layer.According to an embodiment of the present invention, buffer layer can be cadmium sulfide.An implementation according to the present invention
Example, the thickness of buffer layer can be 20nm~80nm.
In step 307, Window layer is provided on the buffer layer.According to an embodiment of the present invention, magnetron sputtering can be used
Technology prepares Window layer.According to an embodiment of the present invention, Window layer can be intrinsic zinc oxide (i-ZnO) and aluminium doping oxygen
Change zinc (AZO).According to an embodiment of the present invention, Window layer can also be used as the preceding electrode of solar battery.According to the present invention
The thickness of one embodiment, AZO can be 700nm~1200nm.According to an embodiment of the present invention, the film square of Window layer
Resistance can be the Ω of 3 Ω~20.
In step 308, the post-processing to battery structure according to an embodiment of the present invention can be at the edge of glassed steel
Corrosion-resistant material is electroplated.To improve the corrosion resistance of battery in use.According to an embodiment of the present invention, in enamel
Steel back finishing coat adhesive back material, protects the glassed steel back side, reduces the risk of battery drain.
In the preparation method of the thin-film solar cells of disclosure of the invention, (it can be free of using glassed steel as substrate
Alkaline element or alkaline element containing low sodium), when can fundamentally solve high temperature preparation CIGS absorbed layer, in substrate
Alkaline element is spread to cigs layer, reduces PID effect.Enamel steel base high temperature resistant can increase CIGS absorbed layer preparation temperature
Obtain the absorbed layer of function admirable.The rate that enamel steel base heats up and cooled down in CIGS process cavity is fast, it is possible to reduce CIGS
The size of process cavity reduces the cost of equipment.And enamel steel base is in cell production process, no fragmentation risk, reduction
Production cost is saved in the loss of production process.
Above-described embodiment is used for illustrative purposes only, and is not limitation of the present invention, in relation to the general of technical field
Logical technical staff can also make a variety of changes and modification without departing from the present invention, therefore, all equivalent
Technical solution also should belong to scope disclosed by the invention.
Claims (11)
1. a kind of preparation method of glassed steel substrate film solar battery, comprising:
Prepare enamel steel base；And
Absorbed layer and Window layer are sequentially prepared above the enamel steel base；
Wherein, the thickness of the enamel steel base is no more than 1.5mm.
2. preparation method according to claim 1, wherein the method for preparing enamel steel base includes: offer steel body；
Enamel coating is provided in the steel body two sides.
3. preparation method according to claim 2, the steel body is ferritic stainless steel or mild steel, and thickness is no more than
1mm。
4. preparation method according to claim 3, the steel body is with a thickness of 0.15mm-0.6mm.
5. preparation method according to claim 2, the enamel coating is free of alkaline element.
6. preparation method according to claim 2, the enamel coating contains potassium element, is free of sodium element.
7. preparation method according to claim 2, the enamel coating contains sodium element and potassium element, and Na/K < 1.
8. preparation method according to claim 2, the enamel coating breakdown voltage is higher than 1500V.
9. preparation method according to claim 1 to 8, after forming the enamel steel base, described in formation
Magnetron sputtering technique is utilized to plate back electrode in the enamel steel base before absorbed layer；In the back electrode and the absorbed layer
Between be deposited alkaline element layer；After forming the absorbed layer, chemical water bath is utilized to prepare before forming the Window layer
Buffer layer；Alkaline element layer is deposited between the absorbed layer and the buffer layer.
10. preparation method according to claim 1 to 8, anti-in the edge-plated for providing enamel steel base
Corrosion material.
11. preparation method according to claim 1 to 8 pastes back at the back side for providing enamel steel base
Plate material.
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