CN110416328A - A kind of HJT battery and preparation method thereof - Google Patents
A kind of HJT battery and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 33
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 91
- 238000000034 method Methods 0.000 claims abstract description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 40
- 230000008569 process Effects 0.000 claims abstract description 26
- 238000000151 deposition Methods 0.000 claims abstract description 23
- 239000002184 metal Substances 0.000 claims abstract description 18
- 230000008021 deposition Effects 0.000 claims abstract description 14
- 238000004140 cleaning Methods 0.000 claims abstract description 9
- 235000008216 herbs Nutrition 0.000 claims abstract description 6
- 210000002268 wool Anatomy 0.000 claims abstract description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- 239000007789 gas Substances 0.000 claims description 14
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 11
- 229910052786 argon Inorganic materials 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical group [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 238000005516 engineering process Methods 0.000 claims description 9
- 239000000919 ceramic Substances 0.000 claims description 6
- 238000005477 sputtering target Methods 0.000 claims description 6
- 239000013077 target material Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 129
- 239000010408 film Substances 0.000 description 26
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 210000004209 hair Anatomy 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
The invention discloses a kind of HJT batteries and preparation method thereof, the battery includes N-type silicon chip, intrinsic amorphous silicon layer is respectively equipped on its light-receiving surface and shady face, p-type doped amorphous silicon layer and n-type doping amorphous silicon layer are respectively equipped in intrinsic amorphous silicon layer, IMO layers and ITO layer are successively arranged on p-type doped amorphous silicon layer, n-type doping amorphous silicon layer is equipped with ITO conductive film layer, is respectively equipped with metal grid lines electrode on ITO layer and ITO conductive film layer.Preparation method includes: to carry out making herbs into wool cleaning, deposition/preparation intrinsic amorphous silicon layer, p-type doped amorphous silicon layer, n-type doping amorphous silicon layer, IMO layers, ITO layer, ITO conductive film layer, metal grid lines electrode to N-type silicon chip.HJT battery of the present invention has excellent electric property, and the application range for improving hetero-junction solar cell has a very important significance, and preparation method has many advantages, such as that simple process, volume production threshold is low, preparation cost is low, high production efficiency.
Description
Technical field
The invention belongs to area of solar cell, it is related to a kind of HJT battery and preparation method thereof.
Background technique
Solar energy power generating is a kind of novel hair that solar radiation energy is converted directly into electric energy using photovoltaic effect
Power technology has many advantages, such as that resource abundance, cleaning, safety, service life are long, it is considered to be most promising renewable energy technologies it
One, it has also become with fastest developing speed in renewable energy technologies, most active research field.
Heterojunction solar battery (HJT battery) is successfully developed by SANYO GS company in nineteen ninety earliest, is with N-shaped list
Crystal silicon chip is substrate, is sequentially depositing by the N-shaped c-Si positive (light-receiving surface) of cleaning and texturing with a thickness of the intrinsic non-of 5~10nm
Polycrystal silicon film (i-a-Si:H), p-type noncrystal membrane (p-a-Si:H), to form p-n heterojunction.At silicon chip back side (shady face)
It is sequentially depositing the i-a-Si:H film with a thickness of 5~10nm, N-shaped amorphous silicon membrane (n-a-Si:H) forms back surface field.It is mixing
The two sides of miscellaneous a-Si:H film, redeposited transparent conductive oxide film (TCO), finally by screen printing technique in two sides
Top layer forms metal collector, and with preparation process temperature, low, high open presses high efficiency, temperature coefficient low and the low, structure pair that decays
Claim can generating electricity on two sides the features such as, be concerned in recent years, have become one of the main direction of development of solar battery.
In the development process of solar battery, transparent conductive oxide (transparent conductive oxide,
Abbreviation TCO) film played vital effect, and other than the requirement for meeting electric conductivity, TCO thin film is also serving as anti-reflection
Layer makes light as much as possible enter emitter and base area through TCO.Since TCO has, forbidden band is wide, visible range light transmission
The high photoelectric characteristics such as low with resistivity, are widely used in the transparent conductive film layer of HJT battery.
Currently, widely used TCO thin film is single layer ITO in HJT battery, single layer ITO has good electric conductivity, still
Have the following problems: (1) infrared reflectivity is high, limits the effective use to long-wave band solar energy；(2) current-carrying of ITO
Transport factor is low, lower to the absorption height of light, penetrance, low so as to cause HJT battery short circuit electric current；(3) ITO and p-type are adulterated
Amorphous silicon layer work function mismatches, and build-up potential reduces, so that hetero-junction solar cell opens pressure and fill factor decline, makes
At the decline of the performance of battery.Obviously, single layer ito thin film is unable to meet demand.In addition, other TCO films, as IMO still has
The lower disadvantage of electric conductivity.Therefore, it is badly in need of finding a kind of structure, is able to satisfy and is matched with the work function of p-type doped amorphous silicon layer, is same
When electric conductivity and the high structure of transmitance promote the performance of HJT battery.
Summary of the invention
The technical problem to be solved by the present invention is to overcome the deficiencies in the prior art, provide a kind of HJT that electric property is excellent
Battery and preparation method thereof.
In order to solve the above technical problems, the invention adopts the following technical scheme:
A kind of HJT battery, including N-type silicon chip are respectively equipped with intrinsic amorphous on the light-receiving surface and shady face of the N-type silicon chip
The intrinsic amorphous silicon layer of silicon layer, the N-type silicon chip light-receiving surface is equipped with p-type doped amorphous silicon layer, the N-type silicon chip shady face
Intrinsic amorphous silicon layer is equipped with n-type doping amorphous silicon layer, is successively arranged IMO layers and ITO layer on the p-type doped amorphous silicon layer,
The n-type doping amorphous silicon layer is equipped with ITO conductive film layer, is respectively equipped with metal grid lines on the ITO layer and ITO conductive film layer
Electrode.
Above-mentioned HJT battery, further improved, IMO layers of the work function is 4.8eV~5.5eV；It is IMO layers described
Mobility be 40cm2V-1·S-1~110cm2V-1·S-1；Described IMO layers with a thickness of 40nm~80nm.
Above-mentioned HJT battery, further improved, the carrier concentration 3 × 10 of the ITO layer20cm-3~10 ×
1020cm-3；The resistivity of the ITO layer is 2 × 10-4Cm~7 × 10 Ω-4Ω·cm；The ITO layer with a thickness of 20nm~
60nm。
As a general technical idea, the present invention also provides a kind of preparation methods of above-mentioned HJT battery, including with
Lower step:
S1, N-type silicon chip is subjected to making herbs into wool cleaning；
S2, deposition intrinsic amorphous silicon layer is distinguished on the light-receiving surface and shady face of N-type silicon chip；
S3, p-type doped amorphous silicon layer is prepared respectively on the deposition intrinsic amorphous silicon layer of N-type silicon chip light-receiving surface and shady face
With n-type doping amorphous silicon layer；
S4, IMO layers and ITO layer are sequentially depositing on p-type doped amorphous silicon layer；
S5, ITO conductive film layer is deposited on n-type doping amorphous silicon layer；
S6, metal grid lines electrode is prepared respectively in ITO layer and ITO conductive film layer, obtain HJT battery.
Above-mentioned preparation method, it is further improved, in the step S4, using reactive plasma depositing operation or magnetic
It controls sputtering technology and deposits IMO layers；When the magnetron sputtering technique is used to deposit IMO layers, deposition parameter are as follows: the background of process cavity is true
Reciprocal of duty cycle is 3 × 10E-4Pa, and the gas source of process cavity is oxygen and argon gas, and the flow of oxygen is 1sccm~40sccm, the stream of argon gas
Amount is 300sccm~500sccm, and sputtering power is 6kW~10kW, and sputtering target material is IMO ceramic target, and vacuum degree is when sputtering
0.2Pa~0.7Pa.
Above-mentioned preparation method, it is further improved, in the step S4, using reactive plasma depositing operation or magnetic
It controls sputtering technology and deposits ITO layer；When the magnetron sputtering technique is used to deposit ITO layer, technological parameter are as follows: the background of process cavity is true
Reciprocal of duty cycle is 3 × 10E-4Pa, and the gas source of process cavity is oxygen and argon gas, and the flow of oxygen is 1sccm~40sccm, the stream of argon gas
Amount is 300sccm~500sccm, and sputtering power is 4kW~8kW, and sputtering target material is ITO ceramic target, and vacuum degree is when sputtering
0.2Pa~0.7Pa.
Above-mentioned preparation method, it is further improved, in the step S2, using pecvd process deposition intrinsic amorphous silicon
Layer.
Above-mentioned preparation method, it is further improved, in the step S3, amorphous is adulterated using pecvd process preparation p-type
Silicon layer and n-type doping amorphous silicon layer.
Above-mentioned preparation method, it is further improved, in the step S5, using reactive plasma depositing operation or magnetic
It controls sputtering technology and deposits ITO conductive film layer.
Above-mentioned preparation method, it is further improved, in the step S6, metal grid lines are prepared using screen printing technique
Electrode.
Compared with the prior art, the advantages of the present invention are as follows:
(1) the present invention provides a kind of HJT battery, including N-type silicon chip, on the light-receiving surface and shady face of N-type silicon chip respectively
Equipped with intrinsic amorphous silicon layer, the intrinsic amorphous silicon layer of N-type silicon chip light-receiving surface is equipped with p-type doped amorphous silicon layer, N-type silicon chip backlight
The intrinsic amorphous silicon layer in face is equipped with n-type doping amorphous silicon layer, is successively arranged IMO layers and ITO layer, N on p-type doped amorphous silicon layer
Type doped amorphous silicon layer is equipped with ITO conductive film layer, is respectively equipped with metal grid lines electrode on ITO layer and ITO conductive film layer.This hair
In bright HJT battery, ITO double-layer structure is added using IMO in the transparent conductive oxide film (TCO) of light-receiving surface, i.e. p-type doping is non-
IMO, redeposited ITO are first deposited on crystal silicon layer.IMO has higher work function 4.8-5.5eV, with p-type doped amorphous silicon layer function
Function more matches, and reduces hole barrier, has higher Built-in potential, and improve HJT battery opens pressure and fill factor, from
And improve the performance of HJT battery.In terms of the balance of electric conductivity and transmitance, IMO adds ITO double-layer structure to optimize optical property
While ensure that its electric property.IMO layers of carrier mobility are high, low to the absorption of light；Infrared transmittivity is high, increases pair
The effective use of long-wave band solar energy substantially increases transmitance on the whole, improves photo-generated carrier, effectively improves battery
Short circuit current, so that the ITO layer for improving the performance of entire battery, while contacting with metal electrode maintains good electric conductivity,
Obtain good Ohmic contact.High short circuit current and low series resistance, improve the performance of HJT battery.HJT of the present invention
Battery has excellent electric property, and the application range for improving hetero-junction solar cell has a very important significance.
(2) the present invention provides a kind of preparation methods of HJT battery, using N-type silicon chip as raw material, first carry out making herbs into wool cleaning,
Then it is sequentially depositing intrinsic amorphous silicon layer respectively on light-receiving surface and shady face, in the deposition of N-type silicon chip light-receiving surface and shady face
P-type doped amorphous silicon layer and n-type doping amorphous silicon layer are prepared in intrinsic amorphous silicon layer respectively, on p-type doped amorphous silicon layer according to
IMO layers of secondary deposition and ITO layer；ITO conductive film layer is deposited on n-type doping amorphous silicon layer；In ITO layer and ITO conductive film layer
Metal grid lines electrode is prepared respectively, obtains HJT battery.The preparation method of HJT battery of the present invention has simple process, volume production threshold
It low, the advantages that preparation cost is low, high production efficiency, can satisfy large scale preparation, be conducive to industrialized utilization, for preparation cost
HJT battery that is low, haveing excellent performance has a very important significance.
Detailed description of the invention
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, the technical scheme in the embodiment of the invention is clearly and completely described.
Fig. 1 is the structural schematic diagram of HJT battery in the embodiment of the present invention 1.
Fig. 2 is the preparation technology flow chart of HJT battery in the embodiment of the present invention 1.
Marginal data:
1, N-type silicon chip；2, intrinsic amorphous silicon layer；3, p-type doped amorphous silicon layer；4, n-type doping amorphous silicon layer；5, IMO layers；
6, ITO layer；7, ITO conductive film layer；8, metal grid lines electrode.
Specific embodiment
Below in conjunction with Figure of description and specific preferred embodiment, the invention will be further described, but not therefore and
It limits the scope of the invention.
In following present invention embodiment, unless otherwise noted, used material and instrument are commercially available, used technique
For common process, used equipment is conventional equipment, and the data obtained is the average value for repeating experiment more than three times.
Embodiment 1
As shown in Figure 1, a kind of HJT battery, including N-type silicon chip 1, it is respectively equipped on the light-receiving surface and shady face of N-type silicon chip 1
Intrinsic amorphous silicon layer 2, the intrinsic amorphous silicon layer 2 of 1 light-receiving surface of N-type silicon chip are equipped with p-type doped amorphous silicon layer 3, and N-type silicon chip 1 is carried on the back
The intrinsic amorphous silicon layer 2 of smooth surface is equipped with n-type doping amorphous silicon layer 4, is successively arranged 5 He of IMO layer on p-type doped amorphous silicon layer 3
ITO layer 6, n-type doping amorphous silicon layer 4 are equipped with ITO conductive film layer 7, are respectively equipped with metal on ITO layer 6 and ITO conductive film layer 7
Gate line electrode 8.
In the present embodiment, the work function of IMO layer 5 is 5.2eV, mobility 79cm2V-1·S-1, with a thickness of 50nm.
In the present embodiment, the carrier concentration 4 × 10 of ITO layer 620cm-3, resistivity is 4 × 10-4Ω cm, with a thickness of
35nm。
In the present embodiment, intrinsic amorphous silicon layer 2 is i-a-Si:H, with a thickness of 5nm；P-type doped amorphous silicon layer 3 is p-a-
Si:H, with a thickness of 8nm；N-type doping amorphous silicon layer 4 is n-a-Si:H, with a thickness of 10nm；ITO conductive film layer 7 is ITO layer, thickness
For 80nm；Metal grid lines electrode 8 is Ag gate line electrode.
A kind of preparation method of the HJT battery of above-mentioned the present embodiment, preparation process flow is as shown in Fig. 2, include following
Step:
S1, using RCA cleaning process to having a size of 156.75mm, with a thickness of 180um n type single crystal silicon piece 1 carry out making herbs into wool,
Cleaning treatment.
S2, through step S1 making herbs into wool cleaning after, sunk respectively on the light-receiving surface and shady face of N-type silicon chip 1 using pecvd process
The long-pending intrinsic amorphous silicon layer 2 with a thickness of 5nm.
S3, it is prepared respectively on the deposition intrinsic amorphous silicon layer 2 of 1 light-receiving surface of N-type silicon chip and shady face using pecvd process
P-type doped amorphous silicon layer 3 with a thickness of 8nm and the n-type doping amorphous silicon layer 4 with a thickness of 10nm.
S4, using DC magnetron sputtering process (one of physical vapour deposition (PVD) PVD) on p-type doped amorphous silicon layer 3
It is sequentially depositing IMO layer 5 and ITO layer 6, specifically:
S4-1, IMO layer 5 is deposited on p-type doped amorphous silicon layer 3 using DC magnetron sputtering process, is evacuated to technique
The background vacuum of chamber is 3 × 10E-4Pa, and the oxygen that flow is 8sccm and the argon that flow is 400sccm are passed through into process cavity
Gas, sputtering power 6kW, sputtering target material are IMO ceramic target, and vacuum degree is 0.3Pa when sputtering.
S4-2, ITO layer 6 is deposited on IMO layer 5 using DC magnetron sputtering process, the background for being evacuated to process cavity is true
Reciprocal of duty cycle is 3 × 10E-4Pa, and the oxygen that flow is 6sccm and the argon gas that flow is 400sccm are passed through into process cavity, sputters function
Rate is 5kW, and sputtering target material is ITO ceramic target, and sputtering vacuum degree is 0.3Pa.
S5, ITO conductive film layer 7 is deposited on n-type doping amorphous silicon layer 4 using DC magnetron sputtering process.
S6, (the silver-colored grid of metal grid lines electrode 8 are prepared using screen printing technique respectively in ITO layer 6 and ITO conductive film layer 7
Line electrode), obtain HJT battery.
HJT battery of the present invention, including N-type silicon chip are respectively equipped with intrinsic amorphous silicon on the light-receiving surface and shady face of N-type silicon chip
The intrinsic amorphous silicon layer of layer, N-type silicon chip light-receiving surface is equipped with p-type doped amorphous silicon layer, the intrinsic amorphous silicon of N-type silicon chip shady face
Layer is equipped with n-type doping amorphous silicon layer, is successively arranged IMO layers and ITO layer, n-type doping amorphous silicon layer on p-type doped amorphous silicon layer
It is equipped with ITO conductive film layer, is respectively equipped with metal grid lines electrode on ITO layer and ITO conductive film layer.In HJT battery of the present invention, by
ITO double-layer structure is added using IMO in the transparent conductive oxide film (TCO) of smooth surface, i.e., is first deposited on p-type doped amorphous silicon layer
IMO, redeposited ITO.IMO has higher work function 4.8-5.5eV, more matches with p-type doped amorphous silicon layer work function, reduces
Hole barrier has higher Built-in potential, and improve HJT battery opens pressure and fill factor, to improve HJT battery
Performance.In terms of the balance of electric conductivity and transmitance, IMO adds ITO double-layer structure to ensure that it while optimizing optical property
Electric property.IMO layers of carrier mobility are high, low to the absorption of light；Infrared transmittivity is high, increases to long-wave band solar energy
The effective use of amount substantially increases transmitance on the whole, improves photo-generated carrier, effectively improves battery short circuit electric current, thus
The performance of entire battery is improved, while the ITO layer contacted with metal electrode maintains good electric conductivity, obtains good Europe
Nurse contact.High short circuit current and low series resistance, improve the performance of HJT battery.HJT battery of the present invention has excellent
Electric property, the application range for improving hetero-junction solar cell have a very important significance.
Above embodiments are only the preferred embodiment of the present invention, and protection scope of the present invention is not limited merely to above-mentioned reality
Apply example.All technical solutions belonged under thinking of the present invention all belong to the scope of protection of the present invention.It is noted that being led for this technology
For the those of ordinary skill in domain, improvements and modifications without departing from the principle of the present invention, these improvements and modifications
It should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of HJT battery, which is characterized in that including N-type silicon chip (1), on the light-receiving surface and shady face of the N-type silicon chip (1)
It is respectively equipped with intrinsic amorphous silicon layer (2), it is non-that the intrinsic amorphous silicon layer (2) of N-type silicon chip (1) light-receiving surface is equipped with p-type doping
The intrinsic amorphous silicon layer (2) of crystal silicon layer (3), N-type silicon chip (1) shady face is equipped with n-type doping amorphous silicon layer (4), the P
IMO layers (5) and ITO layer (6) are successively arranged on type doped amorphous silicon layer (3), the n-type doping amorphous silicon layer (4) is equipped with ITO
Conductive film layer (7) is respectively equipped with metal grid lines electrode (8) on the ITO layer (6) and ITO conductive film layer (7).
2. HJT battery according to claim 1, which is characterized in that the work function of IMO layers described (5) be 4.8eV~
5.5eV；The mobility of IMO layers described (5) is 40cm2·V-1·S-1~110cm2·V-1·S-1；The thickness of IMO layers described (5)
For 40nm~80nm.
3. HJT battery according to claim 2, which is characterized in that the carrier concentration 3 × 10 of the ITO layer (6)20cm-3
~10 × 1020cm-3；The resistivity of the ITO layer (6) is 2 × 10-4Cm~7 × 10 Ω-4Ω·cm；The ITO layer (6)
With a thickness of 20nm~60nm.
4. a kind of preparation method of HJT battery according to any one of claims 1 to 3, which is characterized in that including following step
It is rapid:
S1, N-type silicon chip (1) is subjected to making herbs into wool cleaning；
S2, deposition intrinsic amorphous silicon layer (2) are distinguished on the light-receiving surface and shady face of N-type silicon chip (1)；
S3, p-type doped amorphous silicon is prepared respectively on the deposition intrinsic amorphous silicon layer (2) of N-type silicon chip (1) light-receiving surface and shady face
Layer (3) and n-type doping amorphous silicon layer (4)；
S4, IMO layers (5) and ITO layer (6) are sequentially depositing on p-type doped amorphous silicon layer (3)；
S5, ITO conductive film layer (7) are deposited on n-type doping amorphous silicon layer (4)；
S6, metal grid lines electrode (8) are prepared respectively in ITO layer (6) and ITO conductive film layer (7), obtain HJT battery.
5. the preparation method according to claim 4, which is characterized in that heavy using reactive plasma in the step S4
Product technique or magnetron sputtering technique deposit IMO layers (5)；When the magnetron sputtering technique is used to deposit IMO layers (5), deposition parameter
Are as follows: the background vacuum of process cavity is 3 × 10E-4Pa, and the gas source of process cavity is oxygen and argon gas, and the flow of oxygen is 1sccm
~40sccm, the flow of argon gas are 300sccm~500sccm, and sputtering power is 6kW~10kW, and sputtering target material is IMO ceramics
Target, vacuum degree is 0.2Pa~0.7Pa when sputtering.
6. the preparation method according to claim 4, which is characterized in that heavy using reactive plasma in the step S4
Product technique or magnetron sputtering technique deposition ITO layer (6)；When the magnetron sputtering technique is used to deposit ITO layer (6), technological parameter
Are as follows: the background vacuum of process cavity is 3 × 10E-4Pa, and the gas source of process cavity is oxygen and argon gas, and the flow of oxygen is 1sccm
~40sccm, the flow of argon gas are 300sccm~500sccm, and sputtering power is 4kW~8kW, and sputtering target material is ITO ceramic target,
Vacuum degree is 0.2Pa~0.7Pa when sputtering.
7. the preparation method according to any one of claim 4~6, which is characterized in that in the step S2, use
Pecvd process deposition intrinsic amorphous silicon layer (2).
8. the preparation method according to any one of claim 4~6, which is characterized in that in the step S3, use
Pecvd process prepares p-type doped amorphous silicon layer (3) and n-type doping amorphous silicon layer (4).
9. the preparation method according to any one of claim 4~6, which is characterized in that in the step S5, using reaction
Plasma deposition process or magnetron sputtering technique deposition ITO conductive film layer (7).
10. the preparation method according to any one of claim 4~6, which is characterized in that in the step S6, using silk
Net printing technology prepares metal grid lines electrode (8).
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112713212A (en) * | 2021-01-28 | 2021-04-27 | 湖南红太阳光电科技有限公司 | HJT battery based on double-layer transparent conductive oxide film and preparation method thereof |
| CN113013276A (en) * | 2021-02-26 | 2021-06-22 | 江苏润阳悦达光伏科技有限公司 | Heterojunction solar cell and preparation method thereof |
| US20210265582A1 (en) * | 2018-07-30 | 2021-08-26 | Sony Corporation | Photoelectric conversion element, solid-state imaging device, and electronic device |
| WO2022144210A1 (en) * | 2020-12-30 | 2022-07-07 | Rec Solar Pte. Ltd. | A solar cell |
| CN114889315A (en) * | 2022-04-29 | 2022-08-12 | 晋能光伏技术有限责任公司 | Silk screen printing plate group, silk screen printing method and preparation method of heterojunction solar cell |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103077976A (en) * | 2012-08-17 | 2013-05-01 | 常州天合光能有限公司 | Method for increasing open-circuit voltage of N-type substrate HIT (heterojunction with intrinsic thin layer) solar cell |
| CN205863192U (en) * | 2016-07-22 | 2017-01-04 | 研创应用材料（赣州）股份有限公司 | A kind of silicon based hetero-junction solaode using double TCO film layer |
| CN106784041A (en) * | 2017-02-04 | 2017-05-31 | 江苏神科新能源有限公司 | A kind of silicon based hetero-junction solar cell and preparation method thereof |
| CN207009459U (en) * | 2017-04-14 | 2018-02-13 | 研创应用材料（赣州）股份有限公司 | The silicon based hetero-junction solar cell that a kind of tow sides can generate electricity |
| CN108231928A (en) * | 2017-12-21 | 2018-06-29 | 君泰创新（北京）科技有限公司 | A kind of HJT hetero-junction solar cells and its multi-layer transparent electroconductive film |
| CN109461780A (en) * | 2018-12-13 | 2019-03-12 | 江苏爱康能源研究院有限公司 | Efficient silicon/crystalline silicon heterojunction solar battery electrode structure of high matching degree and preparation method thereof |
-
2019
- 2019-06-25 CN CN201910554740.2A patent/CN110416328A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103077976A (en) * | 2012-08-17 | 2013-05-01 | 常州天合光能有限公司 | Method for increasing open-circuit voltage of N-type substrate HIT (heterojunction with intrinsic thin layer) solar cell |
| CN205863192U (en) * | 2016-07-22 | 2017-01-04 | 研创应用材料（赣州）股份有限公司 | A kind of silicon based hetero-junction solaode using double TCO film layer |
| CN106784041A (en) * | 2017-02-04 | 2017-05-31 | 江苏神科新能源有限公司 | A kind of silicon based hetero-junction solar cell and preparation method thereof |
| CN207009459U (en) * | 2017-04-14 | 2018-02-13 | 研创应用材料（赣州）股份有限公司 | The silicon based hetero-junction solar cell that a kind of tow sides can generate electricity |
| CN108231928A (en) * | 2017-12-21 | 2018-06-29 | 君泰创新（北京）科技有限公司 | A kind of HJT hetero-junction solar cells and its multi-layer transparent electroconductive film |
| CN109461780A (en) * | 2018-12-13 | 2019-03-12 | 江苏爱康能源研究院有限公司 | Efficient silicon/crystalline silicon heterojunction solar battery electrode structure of high matching degree and preparation method thereof |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20210265582A1 (en) * | 2018-07-30 | 2021-08-26 | Sony Corporation | Photoelectric conversion element, solid-state imaging device, and electronic device |
| US11778841B2 (en) * | 2018-07-30 | 2023-10-03 | Sony Corporation | Photoelectric conversion element, solid-state imaging device, and electronic device |
| US20240164122A1 (en) * | 2018-07-30 | 2024-05-16 | Sony Group Corporation | Photoelectric conversion element, solid-state imaging device, and electronic device |
| WO2022144210A1 (en) * | 2020-12-30 | 2022-07-07 | Rec Solar Pte. Ltd. | A solar cell |
| CN112713212A (en) * | 2021-01-28 | 2021-04-27 | 湖南红太阳光电科技有限公司 | HJT battery based on double-layer transparent conductive oxide film and preparation method thereof |
| CN113013276A (en) * | 2021-02-26 | 2021-06-22 | 江苏润阳悦达光伏科技有限公司 | Heterojunction solar cell and preparation method thereof |
| CN114889315A (en) * | 2022-04-29 | 2022-08-12 | 晋能光伏技术有限责任公司 | Silk screen printing plate group, silk screen printing method and preparation method of heterojunction solar cell |
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